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7 Jun 1993

Volume 62, Issue 23, pp. 2899-3051

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Calculated room‐temperature threshold current densities for the visible II‐VI ZnCdSe/ZnSe quantum‐well diode lasers

R. L. Aggarwal, J. J. Zayhowski, and B. Lax

Appl. Phys. Lett. 62, 2899 (1993); http://dx.doi.org/10.1063/1.109190 (3 pages) | Cited 5 times

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Room‐temperature threshold current densities for the visible II‐VI ZnCdSe/ZnSe semiconductor quantum‐well diode lasers have been calculated using a simple model for the quantum‐well gain and spontaneous radiative recombination rate. These results are compared with those for the infrared III‐V GaAs/GaAlAs quantum‐well lasers, calculated using the same model. By tailoring the epitaxial structure for optimum optical confinement, cw room‐temperature operation of the ZnCdSe/ZnSe quantum‐well lasers should be possible with threshold current densities as low as 400 A/cm2 for a 1‐mm cavity length and uncoated laser facets, assuming the problem of ohmic contacts to the epitaxial structure is resolved.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Domain inversion in heat‐treated LiNbO3 crystals

V. D. Kugel and G. Rosenman

Appl. Phys. Lett. 62, 2902 (1993); http://dx.doi.org/10.1063/1.109191 (3 pages) | Cited 24 times

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A new microscopic mechanism of a domain reversal in outdiffused LiNbO3 is proposed. Computer results are in good agreement with experimental data.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
77.80.-e Ferroelectricity and antiferroelectricity
61.72.up Other materials

Capillary‐based x‐ray collector/collimator for diffraction applications

V. E. Kovantsev, J. Pant, V. Pantojas, N. Nazaryan, T. M. Hayes, and P. D. Persans

Appl. Phys. Lett. 62, 2905 (1993); http://dx.doi.org/10.1063/1.109192 (3 pages) | Cited 5 times

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We describe and characterize a new x‐ray optical system in which x rays are steered using multiple reflections within hollow glass capillary tubes. The prototype beam‐shaping collector/collimator evaluated for diffraction with CuKα x rays in this letter has throughput of 6% and increases the useful x‐ray flux by more than a factor of 4 above that of slit collimation with comparable divergence.  
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41.50.+h X-ray beams and x-ray optics
41.85.-p Beam optics
61.05.C- X-ray diffraction and scattering

Normal incidence high contrast multiple quantum well light modulator based on polarization rotation

H. Shen, M. Wraback, J. Pamulapati, M. Dutta, P. G. Newman, A. Ballato, and Y. Lu

Appl. Phys. Lett. 62, 2908 (1993); http://dx.doi.org/10.1063/1.109193 (3 pages) | Cited 24 times

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A novel optically addressed normal incidence multiple quantum well light modulator based on polarization rotation has been demonstrated for the first time. This modulator employs the anisotropic excitonic absorption created by a thermally induced in‐plane uniaxial strain in a multiple quantum well structure to achieve rotations as large as ±25°. An exceedingly high contrast ratio of 330:1 has been measured in this device.
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42.79.Hp Optical processors, correlators, and modulators
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect
78.66.Fd III-V semiconductors

Role of dispersion in limiting pulse width in fiber lasers

Michael L. Dennis and Irl N. Duling

Appl. Phys. Lett. 62, 2911 (1993); http://dx.doi.org/10.1063/1.109194 (3 pages) | Cited 10 times

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Generation of spectral sidebands is characteristic of ultrashort soliton all‐fiber lasers. We relate the generation of these sidebands to a loss mechanism dependent on the pulse duration and total cavity dispersion. We confirm experimentally using an erbium figure eight laser that the minimum pulse duration is therefore limited by the total dispersion. Short cavities constructed from low‐dispersion components allow shorter pulses to be obtained, and we demonstrate pulse durations as short as 160 fs.
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42.55.Wd Fiber lasers
42.60.Fc Modulation, tuning, and mode locking
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.81.Dp Propagation, scattering, and losses; solitons

Coherent 1 W continuous wave operation of large‐aperture resonant arrays of antiguided diode lasers

C. Zmudzinski, D. Botez, L. J. Mawst, C. Tu, and L. Frantz

Appl. Phys. Lett. 62, 2914 (1993); http://dx.doi.org/10.1063/1.109195 (3 pages) | Cited 17 times

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Near‐diffraction‐limited cw operation at 1 W power level is demonstrated, for the first time, from all‐monolithic, phase‐locked diode‐laser arrays. In pulsed operation purely diffraction‐limited beams (0.4° lobewidth) are obtained from relatively large‐aperture (120 μm) devices to power levels of 1 W, with 70%–75% of the energy in the central lobe at low drives. These record‐high coherent powers are achieved from 20‐element resonant‐optical‐waveguide arrays of antiguided diode lasers by significantly increasing the aperture width while maintaining strong discrimination against high‐order array modes via Talbot‐type spatial filters.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Synthesis and characterization of rf‐planar magnetron sputtered KTaxNb1−xO3 thin films

S. R. Sashital, S. Krishnakumar, and S. Esener

Appl. Phys. Lett. 62, 2917 (1993); http://dx.doi.org/10.1063/1.109196 (3 pages) | Cited 18 times

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Thin ferroelectric films of potassium tantalate niobate (KTN) have been grown by rf planar magnetron sputtering on sapphire, platinum coated silicon, and GaAs substrates. X‐ray diffraction analysis indicate epitaxial growth with (100) orientation. The KTN films exhibit dielectric anomalies at temperatures between −4 and 9 °C and peak dielectric constant ϵ of nearly 2000. Films have a smooth surface morphology, and excellent optical transparency. The electro‐optic effect and electrical properties of such KTN thin films are reported.
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81.15.Cd Deposition by sputtering
68.55.-a Thin film structure and morphology
77.55.-g Dielectric thin films

Two‐wavelength reversible holograms in azo‐dye doped nematic liquid crystals

Alan G. Chen and David J. Brady

Appl. Phys. Lett. 62, 2920 (1993); http://dx.doi.org/10.1063/1.109197 (3 pages) | Cited 13 times

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We describe reversible holographic effects in azo‐dye doped liquid crystals. Surface‐stabilized holograms are recorded at 514 nm using beams polarized parallel to the molecular director of the liquid crystals. While these holograms persist for several hours in the dark, complete erasure is achieved in a few seconds by exposure to 337 nm light.
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42.40.Ht Hologram recording and readout methods
61.30.-v Liquid crystals
42.70.Df Liquid crystals
82.50.-m Photochemistry

High‐frequency modulation and suppression of chirp in semiconductor lasers

Vera B. Gorfinkel and Serge Luryi

Appl. Phys. Lett. 62, 2923 (1993); http://dx.doi.org/10.1063/1.109198 (3 pages) | Cited 11 times

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We propose a new method for modulating laser radiation by controlling simultaneously the pumping current and the optical gain in the active region. The latter can be independently varied by modulating the effective carrier temperature. The method allows to eliminate the relaxation oscillations and enhance the modulation frequency to 50 GHz. It also allows to suppress the wavelength chirping in optical communication systems operating at pulse repetition rates of 10 Gb/s.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes

Comparison of electronic transport in boron‐doped homoepitaxial, polycrystalline, and natural single‐crystal diamond

D. M. Malta, J. A. von Windheim, and B. A. Fox

Appl. Phys. Lett. 62, 2926 (1993); http://dx.doi.org/10.1063/1.109199 (3 pages) | Cited 29 times

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Hall‐effect and resistivity measurements were performed on simultaneously deposited B‐doped homoepitaxial and polycrystalline diamond films, as well as a (100)‐oriented type‐IIb natural diamond crystal, over a temperature range of 140–600 K. At 298 K, the respective Hall mobilities for the homoepitaxial and polycrystalline films were 519 and 33 cm2/V s, while the active carrier concentrations were both approximately 2×1014 cm−3. For the natural diamond, a Hall mobility of 564 cm2/V s and a carrier concentration of 2×1013 cm−3 were measured at room temperature. A comparison of the transport behavior of the three specimens indicates that the electronic properties of diamond grown by chemical vapor deposition are potentially of equal or greater quality than natural diamond and that the transport properties of polycrystalline films are severely degraded by the effects of grain boundaries.
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73.61.Cw Elemental semiconductors
73.50.Dn Low-field transport and mobility; piezoresistance
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
72.80.Cw Elemental semiconductors

Optical emission from GaAs/AlGaAs p‐i‐n multiquantum well structures grown on patterned Si substrates

R. Murray, C. Roberts, K. Woodbridge, P. Barnes, G. Parry, and C. Norman

Appl. Phys. Lett. 62, 2929 (1993); http://dx.doi.org/10.1063/1.109200 (3 pages)

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Photoluminescence and cathodoluminescence have been used to investigate the strain in GaAs/AlGaAs multiquantum well structures grown on a thick GaAs buffer layer on a patterned silicon substrate. By growing the epitaxial GaAs only on ‘‘islands’’ of Si the density of microcracks is reduced by nearly two orders of magnitude. Although the biaxial tension is reduced in the vicinity of a microcrack, the strain is almost eliminated at the island edges. Strain is still present in the center of the islands but reduces with decreasing island size offering the possibility of relatively strain and microcrack free, small area optical devices on silicon substrates.
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68.55.-a Thin film structure and morphology
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.66.Fd III-V semiconductors
78.60.Hk Cathodoluminescence, ionoluminescence

Structure of S on passivated GaAs (100)

Z. H. Lu, M. J. Graham, X. H. Feng, and B. X. Yang

Appl. Phys. Lett. 62, 2932 (1993); http://dx.doi.org/10.1063/1.109201 (3 pages) | Cited 47 times

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X‐ray photoelectron spectroscopy (XPS) and E‐polarization‐dependent S K‐edge x‐ray absorption near‐edge structure (XANES) are used to characterize the chemical structure and site location of S on the (NH4)2S‐treated GaAs (100) surface. XPS studies show that S forms chemical bonds with both Ga and As on surfaces treated only with (NH4)2S. After receiving a sufficient water rinse, only Ga—S bonds remain on the surface. Photon E polarization‐dependent XANES studies show that S is bridge bonded to Ga in the [011] azimuth.
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81.65.-b Surface treatments
79.60.Dp Adsorbed layers and thin films

Submicrometer lithographic patterning of thin gold films with a scanning tunneling microscope

L. Stockman, G. Neuttiens, C. Van Haesendonck, and Y. Bruynseraede

Appl. Phys. Lett. 62, 2935 (1993); http://dx.doi.org/10.1063/1.109202 (3 pages) | Cited 22 times

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A scanning tunneling microscope (STM) has been used to locally expose Langmuir–Blodgett layers of a negative electron beam resist (ω‐tricosenoic acid) on top of a thin gold film. The STM operates in a dry nitrogen atmosphere at a voltage difference of about −10 V between the electrochemically etched Pt‐Ir tip and the gold surface. After development in ethanol, the unexposed areas of the gold film are removed by argon ion milling. Gold wires with a linewidth down to 15 nm have been prepared. Electrical transport measurements confirm the homogeneity and the one‐dimensional metallic character at low temperatures of the gold structures.
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85.40.Hp Lithography, masks and pattern transfer
81.65.-b Surface treatments
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy

Thermal processing of a copper‐poly(phenyl quinoxaline) interface: Diffusion of the metal in the polymer studied by high resolution electron‐energy‐loss spectroscopy

M. Fontaine, J. M. Layet, Ch. Grégoire, J. J. Pireaux, and A. Cros

Appl. Phys. Lett. 62, 2938 (1993); http://dx.doi.org/10.1063/1.109203 (3 pages) | Cited 7 times

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Thin layers of metallic copper (up to a few hundreds angström) were deposited onto poly(phenyl quinoxaline) (PPQ), a new thermostable polymer. As suggested by x‐ray photoelectron spectroscopy (XPS) and ascertained by a new type of application of high resolution electron‐energy‐loss spectroscopy, further processing of the interface by thermal anneal (300 °C) induces diffusion of Cu species into the bulk of the polymer. By studying the electronic transitions of the Cu‐PPQ system, we show that it is possible to get a significant understanding of the copper diffusion into the polymer. The combination of the spectroscopic surface sensitive methods allows us to propose a morphological description of the Cu‐PPQ interface before and after anneal.
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66.30.J- Diffusion of impurities
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
68.35.Fx Diffusion; interface formation

Polycrystalline silicon solar cells with a mechanically formed texturization

H. Bender, J. Szlufcik, H. Nussbaumer, G. Palmers, O. Evrard, J. Nijs, R. Mertens, E. Bucher, and G. Willeke

Appl. Phys. Lett. 62, 2941 (1993); http://dx.doi.org/10.1063/1.109628 (3 pages) | Cited 15 times

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Polycrystalline (Wacker SILSO) silicon has been mechanically textured using a conventional dicing saw and beveled blades for V‐groove formation. The minimum optical reflectivity achievable is limited by the blade tip radius and surface roughness after damage etching. Solar cells were prepared using a conventional diffusion and screen printed metallization. Grooved cells without an additional antireflection coating (jsc=31.8 mA/cm2, Voc=536 mV, FF=69%, η=11.8%) showed a 20% increase in jsc and a 1.1% absolute efficiency improvement as compared to a nongrooved reference cell with an antireflexion coating (jsc=26.4 mA/cm2, Voc=547 mV, FF=74.1%, η=10.7%). In grooved cells the efficiency is found to be limited mainly by the fill factor due to a nonoptimized front grid design.
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84.60.Jt Photoelectric conversion
81.65.-b Surface treatments

Photoelastic waveguides formed by interfacial reactions

L. S. Yu, Z. F. Guan, W. Xia, Q. Z. Liu, F. Deng, S. A. Pappert, P. K. L. Yu, S. S. Lau, L. T. Florez, and J. P. Harbison

Appl. Phys. Lett. 62, 2944 (1993); http://dx.doi.org/10.1063/1.109204 (3 pages) | Cited 12 times

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The fabrication of low‐loss photoelastic waveguides in GaAs/AlGaAs layered structures by thin film reactions is investigated. The waveguides are formed by opening a narrow window stripe, a few microns wide, in an otherwise continuous Ni layer under tension deposited on a semiconductor structure. The local tensile stress induced by the Ni layer in the semiconductor causes the local refractive index to increase, thus providing the guiding mechanism. Annealing the sample at 250 °C for 1 h induced an interfacial reaction between the Ni film and the substrate to form Ni3GaAs. The formation of an interfacial compound stabilizes the stresses, making the stress state independent of the deposition system and technique. Single‐mode waveguide propagation losses as low as 1.4 dB/cm at 1.53 μm wavelength have been obtained on annealed waveguides. Further annealing up to 600 °C did not cause degradation in the optical confinement, thus indicating a thermally stable planar waveguide fabricated by this process. Other photoelastic optical devices such as polarizers, splitters, and couplers are also demonstrated.
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42.79.Gn Optical waveguides and couplers
68.35.Gy Mechanical properties; surface strains
68.35.Dv Composition, segregation; defects and impurities
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects

Modeling of piezo‐Hall effects in n‐doped silicon devices

A. Nathan and T. Manku

Appl. Phys. Lett. 62, 2947 (1993); http://dx.doi.org/10.1063/1.109179 (3 pages) | Cited 1 time

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The output response for n‐type 〈100〉 and 〈110〉 silicon Hall geometries is presented for various device (current flow) orientations, in the presence of both magnetic field and stress. The results are based on a systematic formulation of the piezo‐Hall current density equation which accounts for the effects of stress on the galvanomagnetic carrier transport. The equation is presented in a generic form, thus providing an accurate means of interpreting pertinent Hall measurement data in strained materials as well as to reliably predict the output response (including offsets) associated with integrated Hall sensors under stress.
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72.20.My Galvanomagnetic and other magnetotransport effects
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect

Observation of electromigration of hydrogen in polycrystalline silicon using poly emitter bipolar transistors

J. Zhao, G. P. Li, K. Y. Liao, M. R. Chin, and J. Y.‐C. Sun

Appl. Phys. Lett. 62, 2950 (1993); http://dx.doi.org/10.1063/1.109180 (3 pages) | Cited 3 times

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Electromigration of hydrogen inside polycrystalline silicon (polysilicon) has been observed for the first time. Experiments were conducted on polysilicon emitter (poly emitter) n‐p‐n transistors with and without atomic hydrogen inside polysilicon. The current gain (β) of n‐p‐n was selected to monitor electromigration of hydrogen during current stress because of its high sensitivity to hydrogen passivation of dangling bonds. The major characteristics of hydrogen electromigration are shown in this letter.
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66.30.Qa Electromigration
66.30.J- Diffusion of impurities
72.80.Cw Elemental semiconductors

Aluminum acceptor four particle bound exciton complex in 4H, 6H, and 3C SiC

L. L. Clemen, R. P. Devaty, M. F. MacMillan, M. Yoganathan, W. J. Choyke, D. J. Larkin, J. A. Powell, J. A. Edmond, and H. S. Kong

Appl. Phys. Lett. 62, 2953 (1993); http://dx.doi.org/10.1063/1.109627 (3 pages) | Cited 27 times

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New lines in the low temperature luminescence spectra of lightly aluminum doped p‐type films of 3C, 6H, and 4H SiC are identified and associated with the recombination of a neutral aluminum acceptor four particle bound exciton complex.
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71.35.-y Excitons and related phenomena
71.55.Ht Other nonmetals
78.55.Hx Other solid inorganic materials
78.60.Hk Cathodoluminescence, ionoluminescence

p‐type CdS thin films formed by in situ Cu doping in the chemical bath

P. J. Sebastian

Appl. Phys. Lett. 62, 2956 (1993); http://dx.doi.org/10.1063/1.109181 (3 pages) | Cited 25 times

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The formation of p‐type CdS thin films, doped with Cu, in a chemical bath, is reported for the first time. The Cu doped films showed amorphous nature and exhibited high electrical conductivity as compared to undoped films, which were near stoichiometric with n‐type conductivity and crystalline in nature. Cu doping influenced the photocurrent response, structural, electrical, and optical properties of the films. The optical band gap of the CdS film varied from 2.35 to 2 eV after Cu doping. The potential application of these films as an absorber layer in thin film solar cells is being investigated.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
78.66.Hf II-VI semiconductors
73.61.Ga II-VI semiconductors
84.60.Jt Photoelectric conversion

Numerical evaluation of amorphous silicon p‐i‐n solar cell degradation

W. J. Kopetzky and R. Schwarz

Appl. Phys. Lett. 62, 2959 (1993); http://dx.doi.org/10.1063/1.109156 (3 pages) | Cited 2 times

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Through numerical simulation of several hypotheses concerning the degradation of hydrogenated amorphous silicon p‐i‐n solar cells under illumination, we have established a set of ‘‘degradation rules.’’ Comparing the measured white‐light characteristic as a function of intensity, the internal collection efficiency as a function of wavelength, and the i‐layer thickness dependence of the conversion efficiency with these rules allows one to distinguish between the degradation of the i layer, the buffer layer, and the buffer/i‐interface layer.  
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84.60.Jt Photoelectric conversion
72.40.+w Photoconduction and photovoltaic effects
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors

Surfactant coverage and epitaxy of Ge on Ga‐terminated Si(111)

J. Falta, M. Copel, F. K. LeGoues, and R. M. Tromp

Appl. Phys. Lett. 62, 2962 (1993); http://dx.doi.org/10.1063/1.109157 (3 pages) | Cited 41 times

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We have investigated the role of surfactant coverage and bonding for growth of Ge on Si(111). At 470 °C Ge grows on Si(111)‐(7×7) in a Stranski–Krastanov fashion. Preadsorption of 1‐ML Ga at 500 °C forms a Ga:Si(111)‐(6.3×6.3) structure and alters the Ge growth mode from three‐dimensional (3D) islanding to continuous film formation. However, the epitaxial layer contains defects, caused by the presence of domain boundaries of both A‐ and B‐type material. Growth properties depend strongly on the initial Ga coverage: if a (√3×√3) surface with 1/3‐mL Ga is used, a modified Stranski–Krastanov growth mode is observed, with 3D islands of a uniform predominant thickness.
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68.55.-a Thin film structure and morphology
68.37.Vj Field emission and field-ion microscopy
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.35.B- Structure of clean surfaces (and surface reconstruction)

Time dependent ballistic electron emission microscopy studies of a Au/(100)GaAs interface with a native oxide diffusion barrier

A. Alec Talin, Douglas A. A. Ohlberg, R. Stanley Williams, Patrick Sullivan, Ioannis Koutselas, Beth Williams, and Karen L. Kavanagh

Appl. Phys. Lett. 62, 2965 (1993); http://dx.doi.org/10.1063/1.109158 (3 pages) | Cited 22 times

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See Also: Erratum

Show Abstract
Ballistic electron emission microscopy (BEEM) has been used to investigate the effects of a thin interfacial native oxide layer on the electronic properties and stability of a Au/(100) n‐GaAs contact as a function of time. The oxide had no effect on the electronic band structure at the interface measured with BEEM, as compared to similar contacts without a diffusion barrier. In addition, the oxide greatly enhanced the electrical homogeneity of the interface and prolonged the ability of the diode to transmit ballistic electrons to more than 35 days.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
73.20.At Surface states, band structure, electron density of states

Energy levels of the SbGa heteroantisite defect in GaAs:Sb

J. Lagowski, A. Morawski, S. Sen, and P. Edelman

Appl. Phys. Lett. 62, 2968 (1993); http://dx.doi.org/10.1063/1.109159 (3 pages) | Cited 5 times

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A transient capacitance study of antimony‐doped bulk GaAs has led to the identification of two energy levels related to the SbGa heteroantisite defect. The levels with electron emission activation energies of 0.54 and 0.70 eV are typically overshadowed by omnipresent EL3 and EL2 traps related to oxygen defect and the arsenic antisite, respectively. Positive identification of the levels, and determination of their emission rate signatures, was made possible employing GaAs crystals with a defect structure especially engineered to achieve very low concentrations of background traps. Relationship of the levels to the SbGa defect is deduced from excellent agreement with previous electron paramagnetic resonance results.
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71.55.Eq III-V semiconductors
61.72.uj III-V and II-VI semiconductors

Multiple self‐consistent solutions at zero bias and multiple conduction curves in quantum tunneling diodes incorporating N−‐N+‐N− spacer layers

K. K. Gullapalli, A. J. Tsao, and D. P. Neikirk

Appl. Phys. Lett. 62, 2971 (1993); http://dx.doi.org/10.1063/1.109160 (3 pages) | Cited 6 times

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We report the existence of multiple self‐consistent solutions to the coupled Schrödinger and Poisson equations for diodes that combine a tunneling heterostructure with an unusual N−‐N+‐N− spacer layer scheme. The solutions give rise to multiple, distinct current‐voltage curves that extend from zero bias. Within the single electron coherent tunneling model, we find four distinct self‐consistent solutions even at zero bias in a symmetric device based on a double‐barrier quantum‐well tunneling structure.
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73.40.Gk Tunneling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
85.30.De Semiconductor-device characterization, design, and modeling
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