Silicon carbide (SiC) thin films were deposited on titanium carbide (TiC) substrates by pyrolysis of 1,3 disilacyclobutane (C2H8Si2), at atmospheric pressure, in an inverted‐vertical cold‐wall chemical vapor deposition reactor. The growth rate, morphology, and crystallinity of the films were studied, at constant C2H8Si2 flow rate, as a function of substrate temperature (810 °C≤Ts≤1285 °C). The growth rate increased with increasing Ts. Film morphologies were dependent on Ts and slight differences in TiC substrate orientation at Ts≥1015 °C. A smooth, soft as‐grown morphology was obtained at 810 °C. Hard, rough as‐grown surfaces were obtained at Ts≥1066 °C. Films grown at Ts ≥1066 °C contained a SiC primary phase and a Si‐rich second phase. Epitaxial growth of β‐SiC was obtained only at 1210 °C.