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18 Jan 1993

Volume 62, Issue 3, pp. 211-322

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Direct photoetching of polymer films using vacuum ultraviolet radiation generated by high‐order anti‐Stokes Raman scattering

Satoshi Wada, Hideo Tashiro, Koichi Toyoda, Hiroyuki Niino, and Akira Yabe

Appl. Phys. Lett. 62, 211 (1993); http://dx.doi.org/10.1063/1.109018 (3 pages) | Cited 6 times

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High‐order anti‐Stokes Raman pulses of the vacuum ultraviolet were successfully utilized for ablation of polymer films. Efficient anti‐Stokes conversion of the fourth harmonics of a conventional Nd:YAG laser provided fluences as large as 0.4 J/cm2 for a sixth‐order anti‐Stokes pulse at 160 nm. The selection of irradiation wavelength by a ready choice of scattered orders of Raman waves could verify critical wavelength dependence of ablation effect, which turned out that only the light at 160 nm made it possible to ablate polytetrafluoroethylene (PTFE) film with such low fluences.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.65.-b Surface treatments
79.20.Ds Laser-beam impact phenomena

Photoconduction in germanium and phosphorus doped silica waveguides

Raman Kashyap, Graeme D. Maxwell, and Doug L. Williams

Appl. Phys. Lett. 62, 214 (1993); http://dx.doi.org/10.1063/1.109019 (3 pages) | Cited 8 times

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Photoconduction measurements on Ge‐P doped silica planar ridge waveguides exposed to several miliwatts of ultraviolet radiation are reported. It is shown that there is a strong reduction in the photocurrent with time of exposure pointing to a depletion in the available photoactivated carriers. The density of defects is directly inferred from the measurements.
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78.30.Hv Other nonmetallic inorganics
78.40.Ha Other nonmetallic inorganics
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Ce Glasses, quartz
71.55.Jv Disordered structures; amorphous and glassy solids

Use of the Talbot effect to couple the phases of lasers

Paul Latimer

Appl. Phys. Lett. 62, 217 (1993); http://dx.doi.org/10.1063/1.109020 (2 pages) | Cited 4 times

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Antyukhov et al. [JETP Lett. 44, 78 (1986)] first proposed that a normal and partly reflecting mirror be placed a distance a2/λ in front of a laser array to synchronize and phase lock them. Then the Talbot effect, said to produce source ‘‘self‐imaging,’’ forms an ‘‘array image’’ on the array. However, a basic relation of Fresnel diffraction is now found to indicate that the method as used is inherently flawed. The Talbot effect actually introduces phase shifts into some of the reflected light which make the total output nonuniform in phase. This produces a complex amplitude pattern in Talbot planes different from the grating output. Then the various lasers will not emit in phase.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.25.Fx Diffraction and scattering

Frequency tuning of a double‐heterojunction AlGaAs/GaAs‐vertical‐cavity surface‐emitting laser by a serial integrated in‐cavity modulator diode

C. Gmachl, A. Köck, M. Rosenberger, E. Gornik, M. Micovic, and J. F. Walker

Appl. Phys. Lett. 62, 219 (1993); http://dx.doi.org/10.1063/1.108998 (3 pages) | Cited 8 times

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The frequency tuning of a vertical‐cavity surface‐emitting laser through current injection is reported herein. This was achieved by integrating an AlGaAs graded‐index p–n‐modulator diode with a double‐hetero GaAs/AlGaAs laser diode in a vertical cavity formed by an AlAs/AlGaAs‐Bragg reflector and a metallic mirror. Experimental results show an obtained gradient of frequency shift up to 0.93 GHz/mA by the modulator current. This effect is at present restricted to approximately 40 mA due to thermal effects. A theoretical model based on the plasma effect and thermal effects agrees with the experimental values and predicts a maximum value for the gradient of frequency shift of 1.15 GHz/mA with the presented structure.  
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking

Fused silica masks for printing uniform and phase adjusted gratings for distributed feedback lasers

G. Pakulski, R. Moore, C. Maritan, F. Shepherd, M. Fallahi, I. Templeton, and G. Champion

Appl. Phys. Lett. 62, 222 (1993); http://dx.doi.org/10.1063/1.108999 (3 pages) | Cited 8 times

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A method for producing durable fused silica self‐interference grating photomasks is described. These masks allow repeated printing of both uniform and phase adjusted gratings. Periods as fine as 200 nm have been demonstrated. The fabrication of these masks via holographic and focused ion beam lithography and their use as a lithography tool are explained. Distributed feedback lasers, with gratings made by this technique, were produced. These lasers operated in a single longitudinal mode at a wavelength of either 1.55 or 1.3 μm.
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42.79.Dj Gratings
85.40.Hp Lithography, masks and pattern transfer
42.55.Px Semiconductor lasers; laser diodes

Biexciton lasing in CuCl quantum dots

Yasuaki Masumoto, Tomohiro Kawamura, and Koh Era

Appl. Phys. Lett. 62, 225 (1993); http://dx.doi.org/10.1063/1.109000 (3 pages) | Cited 61 times

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Lasing of CuCl microcrystals embedded in a NaCl single crystal was observed for the first time. The lasing takes place at 77 K in a sample sandwiched between dielectric mirrors under pulsed ultraviolet laser excitation. The lasing transition is that from biexciton to exciton. The lasing is observed up to 108 K. The optical gain of the sample is almost the same as that of a CuCl bulk crystal in spite of the low concentration of CuCl in the NaCl matrix.
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42.55.Px Semiconductor lasers; laser diodes
71.35.-y Excitons and related phenomena
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Influence of ion energy on the physical properties of plasma deposited SiO2 reset films

O. Joubert, R. Burke, L. Vallier, C. Martinet, and R. A. B. Devine

Appl. Phys. Lett. 62, 228 (1993); http://dx.doi.org/10.1063/1.108973 (3 pages) | Cited 22 times

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Silicon dioxide films have been deposited using a SiH4+O2 microwave plasma excited by distributed electron cyclotron resonance. The ratio of flow rates of the reactive gas was O2/SiH4∼7. The substrate was not heated intentionally (T<150 °C). The effect of ion energy during deposition, in the 10–150 eV range, has been studied through refractive index, infrared absorption bands, chemical etch rate, and electrical measurements. For ion energies ≳50 eV, many of the film characteristics are close to those of thermal SiO2
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.66.Nk Insulators
77.55.-g Dielectric thin films

Effect of powder synthesis procedure on calcium site occupancies in barium calcium titanate: A Rietveld analysis

P. S. R. Krishna, Dhananjai Pandey, V. S. Tiwari, R. Chakravarthy, and B. A. Dasannacharya

Appl. Phys. Lett. 62, 231 (1993); http://dx.doi.org/10.1063/1.108974 (3 pages) | Cited 21 times

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(Ba,Ca)TiO3 samples with the ratio of (Ba+Ca) to Ti as unity but prepared by (i) a semiwet route involving (Ba,Ca)CO3 solid solution precursors and TiO2 and (ii) the conventional dry route involving BaCO3, CaCO3, and TiO2 powders, exhibit diffuse and BaTiO3‐type sharp ferroelectric phase transitions, respectively. Rietveld analysis of neutron powder diffraction data from the two types of samples shows that, whereas in the samples prepared by the semiwet route, Ca2+ exclusively occupies the Ba2+ site, nearly half of the substituted Ca2+ occupies the Ti4+ site in the case of samples prepared by the dry route. We show that Ca replacement at the Ba site leads to diffuseness whereas Ca introduction at the Ti site leads to sharpening of the transition. To our knowledge, this is the first clear demonstration of the powder synthesis procedure affecting the substitutional sites in multicomponent ceramics and this, in turn, influencing their physical behavior drastically.
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77.80.-e Ferroelectricity and antiferroelectricity
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
61.05.F- Neutron diffraction and scattering

Oxygen desorption from molybdenum oxide by synchrotron radiation and its surface‐cleaning applications

Masao Nagase, Yuichi Utsumi, Housei Akawaza, and Tsuneo Urisu

Appl. Phys. Lett. 62, 234 (1993); http://dx.doi.org/10.1063/1.108975 (3 pages) | Cited 3 times

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The effects of synchrotron radiation (SR) irradiation on molybdenum oxide are studied. Removal of native molybdenum oxide by SR irradiation is observed by reflection high‐energy electron diffraction and Auger‐electron spectroscopy measurements. SR irradiation changes MoO3 thin films to MoO2. Indications are that SR‐stimulated oxygen desorption is the cause. Those SR‐irradiated molybdenum surfaces which are originally covered with native oxide are found to be highly reactive with disilane gas, while nonirradiated surfaces are not.
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61.80.Cb X-ray effects
81.05.Bx Metals, semimetals, and alloys
85.40.Ls Metallization, contacts, interconnects; device isolation

keV ion sputtering of hydroxyapatite

L. Torrisi and G. Foti

Appl. Phys. Lett. 62, 237 (1993); http://dx.doi.org/10.1063/1.108976 (3 pages) | Cited 11 times

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Thin films of hydroxyapatite have been deposited by 5 keV ion sputtering on titanium substrates at room temperature. The sputtering yield is about 5×10−2 molecules/ion for argon beam and shows a linear trend with the ion nuclear stopping power of incoming beams. Noble gases have been adopted to avoid chemical reaction between implanted ions and hydroxyapatite target. Auger electron spectroscopy has been used in a high vacuum chamber to measure in situ the stoichiometry of the deposited film.
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
81.15.Cd Deposition by sputtering

Metalorganic chemical vapor deposition of TiN films for advanced metallization

Gurtej S. Sandhu, Scott G. Meikle, and Trung T. Doan

Appl. Phys. Lett. 62, 240 (1993); http://dx.doi.org/10.1063/1.108977 (3 pages) | Cited 26 times

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Titanium nitride (TiN) films are used extensively in advanced metallization schemes for ultralarge scale integrated applications. In the present experiments, physical properties of thin TiN films deposited using low pressure chemical vapor deposition from tetrakis‐dimethyl‐amino titanium and ammonia have been investigated. Deposited films were characterized by resistivity, stoichiometry and etch rates. It was found that bulk resistivity correlated to wet etch rates with high resistivity films having higher wet etch rates. High bulk resistivity films were unstable in atmosphere and Auger analysis showed higher relative oxygen content. It is concluded that high resistivity films are low density and thereby susceptible to ex situ contamination. Optimized films had bulk resistivity of 250 μΩ cm and wet etch rates comparable to reactively sputtered TiN.  
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.61.Ng Insulators
68.60.-p Physical properties of thin films, nonelectronic

Formation of epitaxial CoSi2 on Si(100): Role of the annealing ambient

André Vantomme, Marc‐A. Nicolet, Gang Bai, and David B. Fraser

Appl. Phys. Lett. 62, 243 (1993); http://dx.doi.org/10.1063/1.108978 (3 pages) | Cited 15 times

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With a thin Ti layer interposed between a Si(100) substrate and a Co overlayer, the inversion of the Co and Ti films and the formation of a partly relaxed epitaxial CoSi2 layer on Si(100) can be obtained by steady‐state annealing in inert as well as reactive ambients. A reactive ambient chemically binds the Ti near the surface as an oxide or nitride layer, which preserves the bilayer structure during a high temperature treatment. In a nonreactive ambient, the Ti and CoSi2 layers react further, resulting in a uniform layer of Co0.25Ti0.75Si2 and CoSi2. An eptiaxial orientation of CoSi2 is retained even in that case.
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81.15.Np Solid phase epitaxy; growth from solid phases
68.35.Fx Diffusion; interface formation
68.55.Nq Composition and phase identification

Determination of the residual stress tensor in Cu/W multilayers by x‐ray diffraction

Ph. Goudeau, K. F. Badawi, A. Naudon, and G. Gladyszewski

Appl. Phys. Lett. 62, 246 (1993); http://dx.doi.org/10.1063/1.108979 (3 pages) | Cited 15 times

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A direct determination of the residual stress tensor in Cu/W multilayers has been performed by x‐ray diffraction using the ‘‘sin2 ψ’’ method. In tungsten sublayers, we found a compressive and isotropic stress in the plane parallel to the multilayer surface of a very high value equal to −6.4 GPa. Furthermore, using stress‐strain relations, the tungsten lattice structure resulting from strains is calculated: the strained W bcc structure is found to be similar to a monoclinic‐like structure leading to important modifications of the diffraction pattern.
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68.60.Bs Mechanical and acoustical properties
61.05.cf X-ray scattering (including small-angle scattering)
61.05.cj X-ray absorption spectroscopy: EXAFS, NEXAFS, XANES, etc.

Femtosecond thermomodulation measurements of Co/Cu and Ag/Cu multilayer films

Ding Liu, Ping He, and D. R. Alexander

Appl. Phys. Lett. 62, 249 (1993); http://dx.doi.org/10.1063/1.108980 (3 pages) | Cited 2 times

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Femtosecond transient reflectivities of Co/Cu and Ag/Cu multilayer films were measured to study the electron‐lattice relaxation in these systems. The measurement results suggest that the thickness of Cu layers does not influence the electron relaxation time. A slow decaying signal, which is absent in Ag/Cu films, was observed in Co/Cu films and it is attributed to the spin excitations in the Co layers.
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73.40.Jn Metal-to-metal contacts
73.50.-h Electronic transport phenomena in thin films
73.61.At Metal and metallic alloys
78.47.-p Spectroscopy of solid state dynamics

Carrier profile evaluation for a Zn‐doped InGaAsP/InGaAsP multiquantum well using a low‐temperature capacitance‐voltage method

Norio Yamamoto, Kiyoyuki Yokoyama, and Mitsuo Yamamoto

Appl. Phys. Lett. 62, 252 (1993); http://dx.doi.org/10.1063/1.108981 (3 pages) | Cited 13 times

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We studied the carrier profile of a Zn‐doped InGaAsP/InGaAsP multiquantum well (MQW) using capacitance‐voltage (C‐V) measurement. Lowering the temperature to 77 K suppresses the Debye length, allowing us to obtain a detailed carrier profile. Furthermore, we propose a method for analyzing the carrier profile, taking the exact depletion layer extension at pn junction into account. Applying the analysis, we obtained the actual carrier profile in the doped MQW with agreement between the peak position in the profile and the well position of MQW. This shows that the low‐temperature C‐V measurement is effective for investigating the carrier profile in MQW.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.61.Ey III-V semiconductors
42.55.Px Semiconductor lasers; laser diodes

Integration of low‐temperature GaAs on Si substrates

Michael Y. Frankel, Bijan Tadayon, and Thomas F. Carruthers

Appl. Phys. Lett. 62, 255 (1993); http://dx.doi.org/10.1063/1.109620 (3 pages) | Cited 13 times

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GaAs was grown on Si substrates by molecular‐beam epitaxy at low substrate temperatures. Femtosecond time‐resolved reflectivity investigations revealed a significant reduction of carrier lifetime in GaAs epilayers from 14 ps to <0.5 ps as the growth temperature was reduced from 400 to 150 °C. Photoconductors were fabricated on the epilayers, and electro‐optic sampling was used to confirm the electrical response times of <1 ps. The responsivity is comparable to that for low‐substrate‐temperature GaAs grown on GaAs substrates, with a photogenerated carrier mobility of ∼100–300 cm2/V s. The low growth temperatures allow ultrafast GaAs‐based photodetector incorporation into Si‐based integrated circuits for novel optoelectronic applications.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.40.+w Photoconduction and photovoltaic effects
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
85.60.Gz Photodetectors (including infrared and CCD detectors)

Mg doping of InP and InGaAs grown by metalorganic molecular beam epitaxy using bis‐cyclopentadienyl magnesium

C. R. Abernathy, P. W. Wisk, S. J. Pearton, and F. Ren

Appl. Phys. Lett. 62, 258 (1993); http://dx.doi.org/10.1063/1.108982 (3 pages) | Cited 6 times

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We have investigated the feasibility of Mg doping using bis‐cyclopentadienyl magnesium (Cp2Mg) during growth of InP and InGaAs by metalorganic molecular beam epitaxy. In InP, hole concentrations between 5×1016 and 4×1018 cm−3 were readily attained without degradation of the surface morphology. Comparison with secondary ion mass spectrometry analysis shows good electrical activation for concentrations ≤2×1018 cm−3 though compensation at low doping levels was observed due to compensation from carbon and oxygen impurities which were present at levels of 9×1016 and 5×1016 cm−3, respectively. Mg profiles in InGaAs tended to be more abrupt than those in InP and hole concentrations up to 1019 cm−3 were achieved. p‐InGaAs/n‐InP structures annealed at 600 °C for 10 s showed no evidence of Mg diffusion.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.61.Ey III-V semiconductors

Band offset variations at Ge/GaAs (100) interfaces

M. Dahmen, U. Rau, M. Kawanaka, J. Sone, and J. H. Werner

Appl. Phys. Lett. 62, 261 (1993); http://dx.doi.org/10.1063/1.108983 (3 pages) | Cited 10 times

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We analyze the band offsets at Ge/GaAs (100) interfaces by internal photoemission, capacitance/voltage and current/voltage measurements. The conduction band offset varies with Ge growth temperature from −0.025 eV for 300 °C to 0.33 eV for 500 °C. We attribute these drastic offset variations to different microscopic interface configurations at the polar Ge/GaAs (100) heterojunction.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Quantum pillar structures on n+ gallium arsenide fabricated using ‘‘natural’’ lithography

Mino Green, M. Garcia‐Parajo, F. Khaleque, and R. Murray

Appl. Phys. Lett. 62, 264 (1993); http://dx.doi.org/10.1063/1.108984 (3 pages) | Cited 12 times

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Random arrays of CsCl hemispherically shaped islands with average diameters as small as 500 Å have been made on n+GaAs substrates. The CsCl behaves as a resist of high selectivity when the GaAs is reactively ion etched in a BCl3 plasma. The resulting structure is a set of pillars all the same height, but with varying diameters, typically ±15% of the average value, 〈D〉. Typical pillar packing density, S, is 20%. Photoluminescence (PL) studies were made at 10 K on n+ and semi‐insulating GaAs using 514.5 nm exciting radiation. PL spectra from n+GaAs structures of 〈D〉=520±78 Å, h=800 Å, S=20%; 〈D〉=610±97 Å, h=450 Å, S=12%; 〈D〉=1215±210 Å, h=600 Å, S=20%, as well as a plane surface, are reported. There is a shift in the peak value of the PL curves with respect to the planar structure of 26, 13, and 2.5 meV, respectively. It may be possible to understand these shifts in terms of quantum confinement effects if the effective pillar size is reduced by surface space charge effects.
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68.70.+w Whiskers and dendrites (growth, structure, and nonelectronic properties)
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Acoustic phonon peak splitting and satellite lines in Raman spectra of semiconductor superlattices

P. X. Zhang, D. J. Lockwood, and J.‐M. Baribeau

Appl. Phys. Lett. 62, 267 (1993); http://dx.doi.org/10.1063/1.108985 (3 pages) | Cited 6 times

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Folded longitudinal acoustic phonon peak splitting and sets of satellite lines are observed in high resolution Raman spectra of Si/Si1−xGex superlattices. Analysis shows that the phonon peak splittings are possibly due to a variation in the superlattice periodicity and the sets of satellite lines originate from the interference of the folded longitudinal acoustic phonons and the confined acoustic phonons in the superlattice film. These fine structures in Raman spectra enable a detailed characterization of the superlattices.
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78.30.Hv Other nonmetallic inorganics
63.20.D- Phonon states and bands, normal modes, and phonon dispersion
78.66.Db Elemental semiconductors and insulators

Novel technique for p‐type nitrogen doped ZnSe epitaxial layers

N. R. Taskar, B. A. Khan, D. R. Dorman, and K. Shahzad

Appl. Phys. Lett. 62, 270 (1993); http://dx.doi.org/10.1063/1.108986 (3 pages) | Cited 27 times

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We report a novel technique to obtain p‐type ZnSe layers doped with nitrogen. The layers were grown in a low‐pressure metalorganic vapor phase epitaxy system using ammonia as the dopant source. A rapid thermal anneal was used to enhance the activation of the nitrogen acceptors. Net acceptor concentration values as high as 3×1016/cm3 were obtained from capacitance‐voltage measurements and the profile was uniform over the thickness of the epitaxial layers. The 7 K photoluminescence spectrum was dominated by the acceptor bound exciton peak; the donor‐acceptor pair spectra were also observed.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.66.Hf II-VI semiconductors

Shallow donor in separation by implantation of oxygen structures revealed by electric‐field modulated electron spin resonance

K. Vanheusden and A. Stesmans

Appl. Phys. Lett. 62, 273 (1993); http://dx.doi.org/10.1063/1.108987 (3 pages) | Cited 6 times

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Electric‐field modulated K‐band electron spin resonance measurements on Si/SiO2/Si structures, formed by implantation of oxygen (SIMOX), were carried out at 4.3–30 K. Large area metal‐oxide‐silicon capacitors were fabricated on these structures and optimized for cavity loading. Sweeping of the Si band gap through the Fermi level near the buried oxide interfaces resulted in the observation of a shallow donor in Si of fairly high local density (≊1018 cm−3), residing in this area; its electron spin resonance signal is turned on and off by positive and negative gate biasing, respectively. The same donor signal has previously been observed in γ‐irradiated SIMOX, revealing that γ irradiation has the same effect as positive biasing.
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61.72.uf Ge and Si
71.55.Cn Elemental semiconductors
73.20.At Surface states, band structure, electron density of states

Iron‐induced alternating current surface photovoltages in n‐type silicon wafers

Hirofumi Shimizu and Chusuke Munakata

Appl. Phys. Lett. 62, 276 (1993); http://dx.doi.org/10.1063/1.108988 (2 pages) | Cited 7 times

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Alternating current surface photovoltage (SPV) is observed in n‐type silicon wafers, which are treated with an iron (Fe)‐contaminated alkaline solution composed of ammonia hydroxide, hydrogen peroxide, and water, indicating that the negative charge appears at wafer surfaces. With the removal of the native oxide, where the residual concentration of Fe is 4.6×1016 atoms/m2, Fe concentration is reduced to the detection limit (4.4×1013 atoms/m2) at the wafer surface, and then the ac SPV vanishes. This result provides evidence that Fe in the native oxide contributes to the negative charge induction, similar to results previously reported for aluminum.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.61.Cw Elemental semiconductors
81.65.-b Surface treatments

On the estimation of depth resolution during sputter profiling

M. Petravić, B. G. Svensson, and J. S. Williams

Appl. Phys. Lett. 62, 278 (1993); http://dx.doi.org/10.1063/1.108989 (3 pages) | Cited 22 times

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We have estimated broadening of sputter profiles for several elements, either buried or implanted in Si, under Ar+, Cs+, and O2+ bombardment using a semiempirical model developed recently by P. C. Zalm and C. J. Vriezema [Nucl. Instrum. Methods B 67, 495 (1992)]. Excellent agreement has been found between this model and experimental data for all three types of primary ions. In the case of oxygen bombardment, however, good agreement is only achieved by taking into account beam‐induced changes at the surface, including swelling and the formation of a surface oxide.
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82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Homoepitaxial growth of InP on (111)B substrates by gas‐source molecular beam epitaxy

H. Q. Hou and C. W. Tu

Appl. Phys. Lett. 62, 281 (1993); http://dx.doi.org/10.1063/1.108990 (3 pages) | Cited 8 times

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InP has been homoepitaxially grown on both exactly (111)B oriented and misoriented substrates by gas‐source molecular beam epitaxy. The optimal growth condition for obtaining a mirrorlike surface was found to be a substrate misorientation of 0.5°–1° toward 〈110〉, a substrate temperature of 470 °C, and a V/III incorporation ratio close to unity. The unity V/III ratio was established readily by monitoring the specular beam intensity of reflection high‐energy electron diffraction when the phosphorus beam was modulated, similar to migration enhanced epitaxy. The InP epilayers with specular surfaces are of high quality as characterized by x‐ray diffraction, Hall measurements, and low‐temperature photoluminescence.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
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