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18 Jan 1993

Volume 62, Issue 3, pp. 211-322

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Suppression of abnormal Zn diffusion in InP/InGaAs heterojunction bipolar transistor structures

Takashi Kobayashi, Kenji Kurishima, and Ulrich Gösele

Appl. Phys. Lett. 62, 284 (1993); http://dx.doi.org/10.1063/1.108991 (2 pages) | Cited 8 times

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It is known that highly n+‐doped subcollector layers in InP/InGaAs heterojunction bipolar transistor structures lead to drastically enhanced zinc diffusion in the subsequently grown base layer. We show that this abnormal zinc diffusion can be suppressed by interrupting growth before the zinc‐doped layer is grown. It is speculated that this growth interruption allows excess nonequilibrium group III self‐interstitials coming from the n+‐doped subcollector layer to disappear before they have a chance to enhance zinc diffusion in the base layer.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
66.30.J- Diffusion of impurities
81.15.Kk Vapor phase epitaxy; growth from vapor phase
85.30.Pq Bipolar transistors

Si diffusion and segregation in low‐temperature grown GaAs

K. L. Kavanagh, J. C. P. Chang, P. D. Kirchner, A. C. Warren, and J. M. Woodall

Appl. Phys. Lett. 62, 286 (1993); http://dx.doi.org/10.1063/1.108992 (3 pages) | Cited 3 times

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Heavily Si‐doped (5×1019 cm−3) low‐temperature GaAs (LT‐GaAs) sandwiched between undoped LT‐GaAs layers has been grown by molecular beam epitaxy and annealed to 900 °C. Transmission electron microscopy showed that within the first few minutes of annealing an accumulation of As precipitates formed near each Si‐doped/undoped LT‐GaAs interface. With further annealing Si segregation to As precipitates was detected with secondary ion mass spectroscopy in the form of deltalike peaks at the As precipitate accumulations. The Si diffusion coefficient was initially concentration independent at a value of 2.5×10−13 cm2/s, comparable to diffusion under intrinsic conditions in As‐rich GaAs grown at normal temperatures. After a 60 min anneal the Si concentration in the As precipitates reached 2.5×1020 cm−3.
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66.30.J- Diffusion of impurities
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.61.Ey III-V semiconductors
64.75.-g Phase equilibria

Transmission and reflection peaks in ballistic transport

Peter J. Price

Appl. Phys. Lett. 62, 289 (1993); http://dx.doi.org/10.1063/1.108993 (2 pages) | Cited 26 times

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An analytical treatment of quantum ballistic transport, for electrons in nanostructures, shows that Lorentzian energy‐dependence peaks of transmission probability and of reflection probability are equally inherent. For both cases the resonance is associated with a local quasilevel state, having a decay time that is related to the Lorentzian energy half‐width by the Breit‐Wigner formula. For a reflection resonance, the peak value of reflection probability is shown to be 1 regardless of the symmetry of the system, in contrast to the transmission resonance case.
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73.40.Gk Tunneling
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices

Measurement of conduction band offsets through Schottky diode transport measurements

I. L. Morris, R. H. Williams, J. I. Davies, and G. J. Clarke

Appl. Phys. Lett. 62, 291 (1993); http://dx.doi.org/10.1063/1.108994 (3 pages) | Cited 4 times

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The charge transport properties of the Schottky diode structure Au/In0.52Al0.48As/In0.53Ga0.47As have been computer modeled by employing Poisson’s equation and the thermionic emission theory. From the unusual form of the current‐voltage (I‐V) relationship, it was predicted that the conduction band offset of the lattice matched InAlAs/InGaAs system could be measured. Experimental results confirm the form of the I‐V relationship and an excellent estimate of the conduction band offset, ΔEc=0.53 eV, was obtained. Further low temperature I‐V measurements are provided as confirmation of our conduction band profiles.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.30.+y Surface double layers, Schottky barriers, and work functions

Nitrogen incorporation in SiO2 by rapid thermal processing of silicon and SiO2 in N2O

G. Weidner and D. Krüger

Appl. Phys. Lett. 62, 294 (1993); http://dx.doi.org/10.1063/1.108995 (3 pages) | Cited 10 times

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The N2O‐rapid thermal processing (RTP) of (100) silicon and of SiO2 at 1150 °C for 30, 100, and 300 s leads to a constant nitrogen maximum content in an interlayer between SiO2 and Si with the consequence of decreasing nitrogen content at surface and in bulk with process time. If 10–10 000 vpm H2 is added to N2O during RTP the nitrogen incorporation remains generally unchanged. The nitrogen should be incorporated from the NOx species dissociated at the interface with favoring the Si–O binding. The nitrogen compensates defective sites near the interface and in the bulk also in the presence of hydrogen.
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61.72.up Other materials
81.65.-b Surface treatments
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Surface chemical bonding of (NH4)2Sx‐treated InP(001)

F. Maeda, Y. Watanabe, and M. Oshima

Appl. Phys. Lett. 62, 297 (1993); http://dx.doi.org/10.1063/1.108996 (3 pages) | Cited 21 times

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(NH4)2Sx‐treated InP(001) surfaces were analyzed by using synchrotron radiation photoelectron spectroscopy to characterize the S‐passivated surfaces and elucidate the solution etching mechanism. Polysulfide chemical states were observed for the first time in both the P 2p and In 4d spectra. Monosulfide and polysulfide states were also evident in the S 2p spectra. Etching models consistent with the experimental results were discussed.
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81.65.-b Surface treatments
73.20.At Surface states, band structure, electron density of states

Negative differential resistance of metal (CoSi2)/insulator (CaF2) triple‐barrier resonant tunneling diode

Masahiro Watanabe, Takashi Suemasu, Shigeki Muratake, and Masahiro Asada

Appl. Phys. Lett. 62, 300 (1993); http://dx.doi.org/10.1063/1.108997 (3 pages) | Cited 26 times

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The electron transport and negative differential resistance in metal–insulator nanometer‐thick heterostructures are reported for the first time. The structure of the samples is a resonant tunneling diode with three‐barriers of 0.9‐nm‐thick CaF2 layers and two wells of 1.9‐ and 2.8‐nm‐thick CoSi2 layers. These layers were grown by means of partially ionized beam epitaxy for CaF2 and a two step growth technique for CoSi2. In the current‐voltage characteristics at 77 K, negative differential resistance was observed in the significant number of samples and the typical peak‐to‐valley ratio was as high as 2. The negative differential resistance observed here can be attributed to the electron transport through the resonant levels in metal/insulator multilayered heterostructures.
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73.40.Gk Tunneling
73.61.-r Electrical properties of specific thin films

Elimination of secondary defects in preamorphized Si by C+ implantation

Satoshi Nishikawa and Tetsuo Yamaji

Appl. Phys. Lett. 62, 303 (1993); http://dx.doi.org/10.1063/1.108968 (3 pages) | Cited 16 times

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In preamorphization of Si, secondary defects formed at the original amorphous/crystal (a/c) interface were studied as a function of the dose of carbon ion implantation. The preamorphized depth was 230 nm. The carbon was implanted at 78 or 90 keV at 2×1012–2×1015/cm2. The size and density of dislocation loops near the a/c interface decreased with increasing C+ dose. The C+ implantation at a dose of 1×1015/cm2 reduced the density of atoms bound by dislocation loops from 5.9×1014/cm2 to 2.6×1013/cm2. At C+ doses higher than about 1×1015/cm2, additional defects with a diameter of less than about 5 nm were observed. These defects are SiC agglomerates that act as a sink for excess self‐interstitials, which results in a reduction in the density of secondary defects.  
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61.80.Jh Ion radiation effects
61.72.uf Ge and Si

Ion beam synthesis of cubic FeSi2

J. Desimoni, H. Bernas, M. Behar, X. W. Lin, J. Washburn, and Z. Liliental‐Weber

Appl. Phys. Lett. 62, 306 (1993); http://dx.doi.org/10.1063/1.108969 (3 pages) | Cited 31 times

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Cubic FeSi2 precipitates were synthesized in Si (100) by room‐temperature Fe ion implantation followed by Si 500 keV ion beam induced epitaxial crystallization at 320 °C. High resolution electron microscopy and Rutherford backscattering/channeling techniques show that the cubic precipitates occur in both aligned (A) and twinned (B) types with a lattice parameter very similar to that of the Si (100) matrix.  
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64.75.-g Phase equilibria
81.15.Np Solid phase epitaxy; growth from solid phases

Fast degradation of boron‐doped strained Si(1−x)Gex layers by 1‐MeV electron irradiation

J. Vanhellemont, M.‐A. Trauwaert, J. Poortmans, M. Caymax, and P. Clauws

Appl. Phys. Lett. 62, 309 (1993); http://dx.doi.org/10.1063/1.108970 (3 pages) | Cited 4 times

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Fast degradation is reported of p+ boron‐doped Si(1−x)Gex strained layers by 1‐MeV electron irradiations performed at room temperature. n+p+ diodes with x=0, 0.12, and 0.16 are fabricated on conventional p‐type Czochralski silicon substrates. Current/voltage, capacitance/voltage, and capacitance/temperature characteristics are studied before and after irradiation as a function of the electron fluence. A possible degradation mechanism is discussed.
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61.80.Fe Electron and positron radiation effects
73.61.Le Other inorganic semiconductors

Direct current‐94.92 MHz hybrid plasma magnetron sputtering for fabrication of YBa2Cu3O7−x thin films

W. Ito, S. Okayama, N. Homma, A. Oishi, and T. Morishita

Appl. Phys. Lett. 62, 312 (1993); http://dx.doi.org/10.1063/1.108971 (3 pages) | Cited 7 times

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YBa2Cu3O7−x thin films have been prepared using a newly designed dc‐94.92 MHz hybrid plasma magnetron sputtering system. The cathode current affected the crystalline orientation of the films as well as the deposition rate. Optical emission spectroscopic studies of this plasma indicate that the intensities of the emission lines from the ions increase with the increasing cathode current. The films showed an excellent crystallinity with the a‐axis being perpendicular to the plane of the substrate; a full width at half‐maximum value of 0.027° was measured for the (200) peak from the rocking curve measurement. The crystallinity of films has reached the level for the first time where the crystallinity essentially depends on the crystallinity of the substrate used.
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81.15.Cd Deposition by sputtering
74.78.-w Superconducting films and low-dimensional structures

Electron optical properties of nanometer field emission electron sources

W. Qian, M. R. Scheinfein, and J. C. H. Spence

Appl. Phys. Lett. 62, 315 (1993); http://dx.doi.org/10.1063/1.108972 (3 pages) | Cited 7 times

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Electron optical properties of nanometer diameter field emission electron sources have been calculated using ray tracing methods. The spherical and chromatic aberration coefficients referred to the object plane were found to be on the order of angstroms. The effective source size was estimated to be much smaller than that in a conventional field emission source. The ultimate resolution of a lensless point projection electron microscope, which depends on both the source aberrations and the effective source size, were also in the order of angstroms. The beam angular half‐width on the anode was 7.4° relative to the virtual image position on the optic axis, and the corresponding coherence width was 9.6°, suggesting that the source is totally coherent.
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79.70.+q Field emission, ionization, evaporation, and desorption
41.75.Fr Electron and positron beams
41.85.-p Beam optics

Acoustic shear wave imaging using an annular lens

D. Zhang and G. M. Crean

Appl. Phys. Lett. 62, 318 (1993); http://dx.doi.org/10.1063/1.108945 (3 pages) | Cited 1 time

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Annular lenses for acoustic shear wave imaging are investigated in this letter. Both theoretical analysis of the distribution of the focused acoustic field in Al2O3 and experimental results show that the longitudinal wave field in a solid will be seriously suppressed by a small absorbing disk at the center of the lens which does not significantly effect the shear wave field in the material. Internal material images are also presented showing that an annular lens is very suitable for obtaining a high quality shear wave image.
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43.35.Yb Ultrasonic instrumentation and measurement techniques
43.58.Ls Acoustical lenses and microscopes

Strong piezoelectricity in nanosized silicon nitride prepared by laser‐induced chemical vapor deposition

Wei‐Xiang Wang, Dao‐Huo Li, Zong‐Cai Liu, and Song‐Hao Liu

Appl. Phys. Lett. 62, 321 (1993); http://dx.doi.org/10.1063/1.108946 (2 pages) | Cited 2 times

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It has been found for the first time that laser‐induced chemical vapor deposition (LICVD) processed nano‐Si3N4 possesses strong piezoelectric effects. The piezoelectricity of LICVD nano‐Si3N4 stems from the charge accumulation in the interfaces and the surfaces of microvoids.  
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77.65.Bn Piezoelectric and electrostrictive constants
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
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