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1 Feb 1993

Volume 62, Issue 5, pp. 435-537

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First‐order quasi‐phase matched LiNbO3 waveguide periodically poled by applying an external field for efficient blue second‐harmonic generation

M. Yamada, N. Nada, M. Saitoh, and K. Watanabe

Appl. Phys. Lett. 62, 435 (1993); http://dx.doi.org/10.1063/1.108925 (2 pages) | Cited 377 times

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A novel method of fabricating a periodic domain structure with ideal laminar domains in LiNbO3 by applying an external field at room temperature is proposed. The method allows a high blue beam power of 20.7 mW and a high conversion efficiency of 600%/W cm2 to be obtained.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
77.80.Dj Domain structure; hysteresis
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Silver‐gold compound metal island films prepared by using a two‐step evaporation method

Kazutaka Baba, Toshiaki Okuno, and Mitsunobu Miyagi

Appl. Phys. Lett. 62, 437 (1993); http://dx.doi.org/10.1063/1.108926 (3 pages) | Cited 15 times

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A silver‐gold compound metal island film prepared by using a two‐step evaporation method is demonstrated for the first time. Silver and gold islands have been completely alloyed by heating the film at 300 °C. The resonance wavelength of the compound metal island film exists between those of pure silver and pure gold island films. It is shown that the resonance wavelength can easily be controlled by selection of the mixture ratio of silver and gold.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.05.Rm Porous materials; granular materials
78.66.Bz Metals and metallic alloys

Ultrafast, large angle, noncollinear, and nonlinear, broadband multilayer deflectors

M. Cada, R. Normandin, and F. Chatenoud

Appl. Phys. Lett. 62, 440 (1993); http://dx.doi.org/10.1063/1.108927 (3 pages) | Cited 1 time

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We demonstrate the use of a multilayer waveguide to enhance harmonic mixing over a large noncollinear angle and present first results for three‐dimensional nonlinear waveguide wave mixing. The resulting surface emission can be used to select any target coordinate within an output plane or half‐space with subpicosecond addressing speeds and large deflection angles. The electro‐optic version is limited only by device capacitance.  
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42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.79.Fm Reflectors, beam splitters, and deflectors
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Low‐threshold operation of hemispherical microcavity single‐quantum‐well lasers at 4 K

F. M. Matinaga, A. Karlsson, S. Machida, Y. Yamamoto, T. Suzuki, Y. Kadota, and M. Ikeda

Appl. Phys. Lett. 62, 443 (1993); http://dx.doi.org/10.1063/1.108928 (3 pages) | Cited 19 times

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We demonstrate low‐threshold lasing at 4 K in optically pumped hemispherical In0.2Ga0.8As single‐quantum‐well microcavities. The incident threshold pump power density is 11 kW/cm2 corresponding to an absorbed power density of about 320 W/cm2, and the measured spontaneous emission factor β is about 0.01.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Absorption and scattering in nonlinear optical polymeric systems

Andrew Skumanich, Mark Jurich, and J. D. Swalen

Appl. Phys. Lett. 62, 446 (1993); http://dx.doi.org/10.1063/1.109618 (3 pages) | Cited 20 times

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Fundamental absorption measurements were made on organic films which are candidates for nonlinear optical materials applications, in order to gain insight into the loss mechanisms. Photothermal deflection spectroscopy was used to obtain the full absorption spectrum and to explain observed variations in waveguide attenuation. The absorption data provide a complete characterization of the optical spectrum and allow us to select optimal polymer‐chromophore systems. The variations in the attenuation at 832 nm are due to the chromophore absorption, while for wavelengths longer than 1 μm, the C—H vibrational overtones and combination bands of the polymer dominate the spectrum and are likely to be the main source of waveguide attenuation.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.70.Jk Polymers and organics
42.79.Gn Optical waveguides and couplers

Integrated‐optical switch arrays in GaAs based on electrically controlled dynamic free carrier gratings

Lewis B. Aronson and Lambertus Hesselink

Appl. Phys. Lett. 62, 449 (1993); http://dx.doi.org/10.1063/1.108929 (3 pages)

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A new high density integrated‐optical switch design using electrically controlled diffraction gratings formed in the intersection of crossing waveguides is proposed and demonstrated. The gratings are formed, in one implementation, by implanting donor atoms in a periodic pattern. Free carriers from the implanted ions modify the index of refraction resulting in Bragg diffraction between the waveguides. Depletion of the free carriers using a reverse bias voltage switches off the diffraction. High speed switch arrays of 100×100 elements on a single substrate may be feasible. Fabrication and demonstration of a low efficiency proof‐of‐concept switch array in GaAs for use at 1.55 μm are reported. Other designs capable of much higher diffraction efficiencies are described.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.82.Et Waveguides, couplers, and arrays

Continuous electronic tuning of a narrow‐band Nd3+‐fiber laser

Hendrik Sabert

Appl. Phys. Lett. 62, 452 (1993); http://dx.doi.org/10.1063/1.108930 (3 pages)

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Continuous electronic tuning of a linear Nd3+‐fiber laser near 1088 nm wavelength is demonstrated by controlling the relative phase of two cascaded intracavity frequency shifters. A servoloop tracks the mode selecting elements of the laser with respect to the oscillation frequency and permits complete suppression of mode jumps.
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42.55.Wd Fiber lasers
42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Lattice disorder, facet heating and catastrophic optical mirror damage of AlGaAs quantum well lasers

P. W. Epperlein, P. Buchmann, and A. Jakubowicz

Appl. Phys. Lett. 62, 455 (1993); http://dx.doi.org/10.1063/1.108931 (3 pages) | Cited 15 times

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Raman microprobe spectra from dry‐etched, coated (110) AlGaAs single quantum well laser mirrors show, apart from the allowed phonon modes, a series of symmetry forbidden modes whose strength is dependent on the mirror treatment prior to coating. A particularly strong mode at 193 cm−1 can be attributed to disorder activated longitudinal acoustic phonon scattering in addition to—and this is new—the Eg‐mode of elemental arsenic. The existence of lattice disorder and arsenic clusters is confirmed by Rayleigh scattering and energy dispersive x‐ray spectroscopy. The optical power level at catastrophic optical mirror damage and the local mirror temperatures of the biased laser are found to have a strong dependence on mirror disorder.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation
78.30.Fs III-V and II-VI semiconductors

AlGaInP multiple‐quantum‐wire lasers grown by gas source molecular beam epitaxy

E. M. Stellini, K. Y. Cheng, P. J. Pearah, A. C. Chen, A. M. Moy, and K. C. Hsieh

Appl. Phys. Lett. 62, 458 (1993); http://dx.doi.org/10.1063/1.108932 (3 pages) | Cited 20 times

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GaxIn1−xP/Al0.15Ga0.35In0.5P graded‐index separate‐confinement heterostructure visible laser structures with multiple quantum wire active regions have been formed in situ during gas source molecular beam epitaxy. No regrowths or ex situ fabrication procedures were employed in the formation of the quantum wires. Quantum wires with cross‐sectional dimensions of approximately 50×120 Å were routinely achieved with a linear density of 100/μm. Broad area stripe geometry lasers with contact stripe oriented in the [110] and [110] directions exhibited anisotropic threshold current densities varying in ratio by a factor of more than 3.75. Threshold current densities as low as 400 A/cm2 were obtained for lasers with stripes in the [110] direction, perpendicular to the quantum wires. Strong dependence of electroluminescence polarization on stripe direction was also observed.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Near‐field optical microscope using a silicon‐nitride probe

N. F. van Hulst, M. H. P. Moers, O. F. J. Noordman, R. G. Tack, F. B. Segerink, and B. Bölger

Appl. Phys. Lett. 62, 461 (1993); http://dx.doi.org/10.1063/1.108933 (3 pages) | Cited 59 times

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Operation of an alternative near‐field optical microscope is presented. The microscope uses a microfabricated silicon‐nitride probe with integrated cantilever, as originally developed for force microscopy. The cantilever allows routine close contact near‐field imaging on arbitrary surfaces without tip destruction. The effect of adhesion forces on the coupling to the evanescent wave has been observed. Images with a lateral resolution of about 50 nm are presented and compared with atomic force images. A specific sample area can be selected using an integrated conventional light microscope.  
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07.60.Pb Conventional optical microscopes
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy

Cr‐doped GaAs/AlGaAs semi‐insulating multiple quantum well photorefractive devices

A. Partovi, A. M. Glass, D. H. Olson, G. J. Zydzik, H. M. O’Bryan, T. H. Chiu, and W. H. Knox

Appl. Phys. Lett. 62, 464 (1993); http://dx.doi.org/10.1063/1.108934 (3 pages) | Cited 42 times

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Semi‐insulating multiple quantum well photorefractive devices using GaAs/Al0.29Ga0.71As with an electric field applied perpendicular to the layers are demonstrated. Semi‐insulating behavior is obtained by doping with Cr(1016/cm3) during epitaxial growth of the material. Diffraction efficiencies as high as 3% with an applied voltage of 20 V and microsecond response times are obtained in a 2 μm thick device. These devices are of importance for implementation of fast and sensitive two‐dimensional optical information processing systems at wavelengths compatible with current diode lasers without the spatial‐bandwidth limitations of thick photorefractive materials.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.79.Hp Optical processors, correlators, and modulators

Transmission electron microscopy study of chemically etched porous Si

S. Shih, K. H. Jung, R.‐Z. Qian, and D. L. Kwong

Appl. Phys. Lett. 62, 467 (1993); http://dx.doi.org/10.1063/1.108935 (3 pages) | Cited 19 times

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We have developed a new, minimal damage approach for examination of luminescent porous Si (PS) layers by transmission electron microscopy (TEM). In this approach, chemically etched (CE) PS layers are fabricated after conventional plan‐view TEM sample preparation. Our TEM studies show that crystalline, polycrystalline, and amorphous phases exist in the same CE sample. The microstructure is believed to gradually change from crystalline to amorphous during chemical etching in a HF‐HNO3‐H2O solution. The microcrystallites in the polycrystalline region are estimated to be 15–100 Å, while the pore size is on the order of 400 Å.
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81.65.-b Surface treatments
78.55.Hx Other solid inorganic materials

Generation of 13‐fs pulses from a mode‐locked Ti:Al2O3 laser with reduced third‐order dispersion

Bob Proctor and Frank Wise

Appl. Phys. Lett. 62, 470 (1993); http://dx.doi.org/10.1063/1.108936 (3 pages) | Cited 10 times

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The third‐order dispersion of a mode‐locked Ti:Al2O3 laser has been reduced by replacing a pair of flint glass prisms with a sequence of four quartz prisms. This allows transform‐limited 13‐fs pulses to be generated with a gain crystal 20 mm long. To date, these are the shortest pulses generated directly from a laser.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.55.Px Semiconductor lasers; laser diodes

Radial flow effects in a multidimensional, three‐moment fluid model of radio frequency glow discharges

Fongray F. Young and Chwan‐Hwa Wu

Appl. Phys. Lett. 62, 473 (1993); http://dx.doi.org/10.1063/1.108937 (3 pages) | Cited 10 times

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For the first time, a two‐dimensional self‐consistent nonequilibrium fluid model is used in simulations of rf glow discharges to evaluate the quantitative effects of the radial and axial flow dynamics inside a cylindrically symmetric geometry. Electrons are modeled with a three‐moment nonequilibrium model and ions are modeled with a nonequilibrium single‐moment model which includes an ionic effective electric field. The nonuniform plasma density profiles and the radial sheath width variation with various gas pressures are discussed. These resulting radially nonuniform plasma density profiles are an important issue for plasma processing.
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52.80.Hc Glow; corona
52.65.-y Plasma simulation
85.40.Hp Lithography, masks and pattern transfer

Self‐assembled monolayer electron beam resist on GaAs

R. C. Tiberio, H. G. Craighead, M. Lercel, T. Lau, C. W. Sheen, and D. L. Allara

Appl. Phys. Lett. 62, 476 (1993); http://dx.doi.org/10.1063/1.108938 (3 pages) | Cited 40 times

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We present results on electron beam exposure of a self‐assembled monolayer film as a self‐developing positive resist on GaAs. A 1.5 nm thick monolayer of n‐octadecanethiol (C18H37SH) deposited on a GaAs (100) substrate showed a electron beam sensitivity of about 100 μC/cm2. The monolayer resist was used as a mask for chemical etching of the GaAs. Patterns in GaAs have been created with widths approximately equal to the exposing electron beam width of 50 nm.
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68.60.-p Physical properties of thin films, nonelectronic
61.80.Fe Electron and positron radiation effects
81.65.-b Surface treatments

Deposition of amorphous fluoropolymers thin films by laser ablation

Graciela B. Blanchet

Appl. Phys. Lett. 62, 479 (1993); http://dx.doi.org/10.1063/1.108939 (3 pages) | Cited 57 times

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Thin films of the amorphous fluoropolymer, Teflon AF(r), were deposited by laser ablation using the 4th harmonic, at 266 nm, of a Nd‐YAG laser. Infrared spectroscopy indicated that the composition of the ablated films were that of the starting materials and x‐ray diffraction spectra corroborated the lack of crystallinity. The morphology of the films was controlled by the temperature of the substrate during film formation. We suggest pyrolitic decomposition and subsequent repolymerization as a possible mechanism to the formation of Teflon‐AF(r) films by laser ablation.
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81.15.Fg Pulsed laser ablation deposition
82.50.-m Photochemistry

Identification of paramagnetic Pb+3 defects in lead zirconate titanate ceramics

W. L. Warren, B. A. Tuttle, P. J. McWhorter, F. C. Rong, and E. H. Poindexter

Appl. Phys. Lett. 62, 482 (1993); http://dx.doi.org/10.1063/1.108940 (3 pages) | Cited 17 times

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We report the first observation of positively charged Pb+3 defect centers in lead zirconate titanate (PZT) ceramics using electron paramagnetic resonance. The charged traps were optically generated using ultraviolet light energies roughly corresponding to the band gap of PZT (3.4 eV). The interpretation of the 207Pb+3 hyperfine parameters indicates that the defect’s unpaired electron is approximately 48% localized on the Pb nucleus. These observations may be of considerable importance since they prove that charged carriers created by optical excitation become trapped and form charged paramagnetic defects.
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76.30.-v Electron paramagnetic resonance and relaxation
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
77.80.-e Ferroelectricity and antiferroelectricity

Spiral growth in epitaxial YBa2Cu3O7−x thin films produced by high deposition rate chemical vapor deposition

L. Luo, M. E. Hawley, C. J. Maggiore, R. C. Dye, R. E. Muenchausen, L. Chen, B. Schmidt, and A. E. Kaloyeros

Appl. Phys. Lett. 62, 485 (1993); http://dx.doi.org/10.1063/1.108914 (2 pages) | Cited 9 times

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A technologically useful chemical vapor deposition process with high growth rate (≳4 μm/h) was developed for the epitaxial growth of YBa2Cu3O7−x (YBCO) thin films. Even at the high growth rate used in this process, a spiral growth mechanism was observed and the films grown had electrical (Tc=92 K, Jc of 2×106A/cm2 at 77 K) and structural properties equal to films produced by physical vapor deposition.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
74.78.-w Superconducting films and low-dimensional structures
74.72.-h Cuprate superconductors

Moire fringe images of twin boundaries in chemical vapor deposited diamond

Dan Shechtman, Albert Feldman, Mark D. Vaudin, and John L. Hutchison

Appl. Phys. Lett. 62, 487 (1993); http://dx.doi.org/10.1063/1.108915 (3 pages) | Cited 28 times

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Features in lattice image micrographs of chemical vapor deposited diamond can be interpreted as Moire fringes that occur when viewing twin boundaries that are inclined to the electron beam. The periodicities in images of inclined twin boundaries with Σ=3 and Σ=9 misorientations have been modeled by computer graphic simulation.
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61.72.Mm Grain and twin boundaries
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Tin oxide gated metal‐insulator‐semiconductor switch diode for room‐temperature high speed gas sensing applications

Y. K. Fang, F. Y. Chen, J. D. Hwang, B. C. Fang, and Jiann‐Ruey Chen

Appl. Phys. Lett. 62, 490 (1993); http://dx.doi.org/10.1063/1.108916 (3 pages) | Cited 5 times

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This letter shows the turn on–off current‐voltage curves of a tin oxide gated metal‐insulator‐semiconductor switch diode at room temperature in air, ethanol gas, and hydrogen gas ambient, respectively. Also, the gate turn‐off capability and turn‐off response time of the device under these gas ambients are investigated. The experimental results show that the device has higher sensitivity and higher speed features in sensing these flammable gases than that of other reported devices at room temperature. The causes which lead to the high sensitivity and high speed features of the sensor were studied in detail and are described.
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85.30.-z Semiconductor devices
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Free and bound exciton photoluminescence of quantum well affected by free carriers

Er‐Xuan Ping

Appl. Phys. Lett. 62, 493 (1993); http://dx.doi.org/10.1063/1.108889 (3 pages) | Cited 8 times

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Free exciton (FE) and bound exciton (BE) photoluminescence (PL) of quantum well (QW) affected by free carrier (FC) is studied by a model which includes the transfer of particles among FC, FE, and BE states. It is shown that FC state is important not only at high temperature but also at low temperature. General formulas for FE and BE PL are developed. The two‐dimensional law of mass action is reproduced for high temperature, and the trapping of FE by defects is obtained for low defect concentration. Temperature behavior of FE and BE PL for high defect concentration is also discussed.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
71.35.-y Excitons and related phenomena

Scanning force microscopy measurement of edge growth rate enhancement in selective area epitaxy

M. A. Cotta, R. A. Hamm, T. W. Staley, R. D. Yadvish, L. R. Harriott, and H. Temkin

Appl. Phys. Lett. 62, 496 (1993); http://dx.doi.org/10.1063/1.108890 (3 pages) | Cited 8 times

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Using scanning force microscopy we have studied the growth rate enhancement at the edge of InP and lattice matched InGaAs layers grown into openings on SiO2‐masked InP substrates by selective area epitaxy. The growth method was metalorganic molecular beam epitaxy. The growth rates were measured at the center and at the edge of the openings using a scanning force microscope. We have found that the growth rate enhancement can be minimized by using lower metalorganic and hydride flows, and that diffusion is the dominant process at work in the formation of the edge. The migration length of the species depends on the arrival rate of the precursor molecules to the substrate, determined by the absolute group III and V flows, and not on the nominal V/III ratio used for the growth.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

New oxide phase with wide band gap and high electroconductivity CdGa2O4 spinel

Takahisa Omata, Naoyuki Ueda, Naoko Hikuma, Kazushige Ueda, Hiroshi Mizoguchi, Takuya Hashimoto, and Hiroshi Kawazoe

Appl. Phys. Lett. 62, 499 (1993); http://dx.doi.org/10.1063/1.108891 (2 pages) | Cited 35 times

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CdGa2O4 spinel was found to be a promising material as a transparent electronic conductor. By measurements of diffuse reflectance spectra, CdGa2O4 was found to have a wider band gap (∼3.5 eV) than indium tin oxide. The electrical conductivity of the sintered sample of CdGa2O4 was over 102 S cm−1 with no intentional doping.
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72.80.Jc Other crystalline inorganic semiconductors
78.40.Ha Other nonmetallic inorganics

Kinetics of solid phase epitaxial regrowth in amorphized Si0.88Ge0.12 measured by time‐resolved reflectivity

C. Lee, T. E. Haynes, and K. S. Jones

Appl. Phys. Lett. 62, 501 (1993); http://dx.doi.org/10.1063/1.108892 (3 pages) | Cited 36 times

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Time‐resolved reflectivity has been used to measure the rate of solid phase epitaxial regrowth (SPER) in situ during annealing of strained Si0.88Ge0.12 epilayers on Si preamorphized by the implantation of Si. The SPER velocities were measured over more than two orders of magnitude at temperatures from 503 to 603 °C. The results confirm that the average SPER velocity in thin, strained Si0.88Ge0.12 layers is less than that in pure Si. Furthermore, these real‐time measurements demonstrate that the SPER rate for strained Si0.88Ge0.12 alloys is not a constant during regrowth at a fixed temperature but varies systematically as a function of the position of the amorphous‐crystalline interface. The activation energy barrier of SPER in strained Si0.88Ge0.12 is higher than that in pure Si and is also a function of interface position, ranging from 2.94 to 3.11 eV. Cross‐section transmission electron microscopy shows that strain‐relieving defects are introduced coincidentally with the minimum regrowth rate.
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81.15.Np Solid phase epitaxy; growth from solid phases
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
61.50.Ks Crystallographic aspects of phase transformations; pressure effects

Electron mobility enhancement from coupled wells in delta‐doped GaAs

X. Zheng, T. K. Carns, K. L. Wang, and B. Wu

Appl. Phys. Lett. 62, 504 (1993); http://dx.doi.org/10.1063/1.108893 (3 pages) | Cited 34 times

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It is found that when two Si delta (δ) doped wells in GaAs are placed in close proximity to one another, the electron Hall mobility is enhanced two to five times over that of the single well case. The temperature dependence of the mobility is also reported. Samples with a variety of spacer widths have been studied. Our theoretical and experimental data show that the excited subbands in the double well structure have significant carrier densities located in the undoped region where Coulombic scattering is reduced, and are thus found to play an important role in the observed mobility behavior.
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73.50.Dn Low-field transport and mobility; piezoresistance
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.80.Ey III-V and II-VI semiconductors
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