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8 Feb 1993

Volume 62, Issue 6, pp. 541-659

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Er3+:YLiF4 continuous wave cascade laser operation at 1620 and 2810 nm at room temperature

B. Schmaul, G. Huber, R. Clausen, B. Chai, P. LiKamWa, and M. Bass

Appl. Phys. Lett. 62, 541 (1993); http://dx.doi.org/10.1063/1.108904 (3 pages) | Cited 13 times

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For the first time cw, cascade lasing was demonstrated in 1% Er doped yttrium lithium fluoride (YLF) at room temperature at both 1620 and 2810 nm. In addition, cw lasing in Er[1%]:YLF at 1640 nm and in Er[5%]:YLF at 2810 nm at room temperature is reported for the first time in material of such low concentration.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.-v Laser optical systems: design and operation

11.6 W peak power, diffraction‐limited diode‐to‐diode optical amplifier

David Mehuys, David F. Welch, Lew Goldberg, and Joseph Weller

Appl. Phys. Lett. 62, 544 (1993); http://dx.doi.org/10.1063/1.108905 (3 pages) | Cited 2 times

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A 600‐μm‐wide by 2200‐μm‐long broad area single‐pass semiconductor amplifier is demonstrated to emit up to 11.6 W of peak power in a nearly diffraction‐limited far field pattern when injected with 100 mW from a single‐mode laser diode. The amplifier slope efficiency of 0.60 W/A is identical to that obtained using a 100 mW Ti:sapphire master oscillator, and only slightly lower than the slope efficiency of 0.75 W/A measured under fully saturated conditions with 400 mW of Ti:sapphire incident power.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Injection locking of leaky‐wave coupled resonant optical waveguide arrays

M. Jansen, D. Botez, L. J. Mawst, T. J. Roth, J. J. Yang, S. S. Ou, P. Hayashida, and L. A. Dozal

Appl. Phys. Lett. 62, 547 (1993); http://dx.doi.org/10.1063/1.108906 (3 pages) | Cited 1 time

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Injection locking of mutually coupled resonant antiguided arrays, consisting of up to four ten‐element arrays, has been demonstrated. External injection causes single‐longitudinal mode operation, and enhanced phase‐locking of the coupled arrays. The injected signal is distributed via leaky‐wave coupling, so that the master‐oscillator signal injected into one element (3 μm) of one array locks the whole array ensemble (223 μm wide aperture). Wavelength tuning is achieved over a 12 Å spectral range for two coupled arrays, and has no impact on the coupled array far‐field pattern.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Polarization dependent refractive index of an interdiffusion induced AlGaAs/GaAs quantum well

E. Herbert Li, Bernard L. Weiss, K. S. Chan, and Joseph Micallef

Appl. Phys. Lett. 62, 550 (1993); http://dx.doi.org/10.1063/1.108907 (3 pages) | Cited 18 times

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The polarization dependent refractive index, nR, at room temperature is calculated for interdiffusion‐induced Al0.3Ga0.7As/GaAs single quantum well (QW) structures for the wavelength range 0.75–2 μm. The confinement profile is modeled by an error function and nR is determined using the real and imaginary parts of the dielectric function, including contributions from the Γ, X, and L Brillouin zones. Results show that at longer wavelengths nR decreases with increasing interdiffusion, which normally provides a positive index step with respect to a less interdiffused QW. For shorter wavelengths (around the QW band edge), the wavelength range for a positive refractive index step increases as the extent of disordering between two interdiffused QWs is increasing.
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78.66.Fd III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Oscillator strength enhancement for [110]‐polarized light in compressively strained GaInP ordered crystals used in AlGaInP lasers

Yoshiyasu Ueno

Appl. Phys. Lett. 62, 553 (1993); http://dx.doi.org/10.1063/1.108908 (3 pages) | Cited 16 times

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This letter studies the effect of compressive strain on the polarization‐dependent oscillator strength in GaInP CuPt‐type ordered crystals. The hole eigenstates are obtained by diagonalizing the total Hamiltonian consisting of the Hamiltonian for ordered GaInP and a perturbed term caused by the strain. Our calculation reveals that the strain squeezes the hole wave function and that the oscillator strength between an electron and the upper‐valence‐band hole increases for [110]‐polarized light. The oscillator strength for [110]‐polarized light increases with the strain, reaching 14% at +0.98% strain.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
78.66.Fd III-V semiconductors

Low‐threshold InGaAs/GaAs/AlGaAs quantum‐well laser with an intracavity optical modulator by impurity‐induced disordering

W. X. Zou, D. B. Young, K‐K. Law, and J. L. Merz

Appl. Phys. Lett. 62, 556 (1993); http://dx.doi.org/10.1063/1.108909 (3 pages) | Cited 3 times

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A novel InGaAs/GaAs/AlGaAs QW laser with an intracavity optical modulator has been fabricated by impurity‐induced disordering. Both the active and the passive sections of the device were built along an identical waveguide created by Si diffusion. The electrical isolation between the emitter and the modulator was increased by an order of magnitude by making the Zn diffusion selective in the longitudinal direction while self‐aligned in the lateral direction. The typical device has a pulsed threshold of Ith=23 mA with zero bias on the modulator and an on–off ratio of 32:1 with a biasing swing of 1.8 V for normally‐on operation.
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42.82.Bq Design and performance testing of integrated-optical systems
42.55.Px Semiconductor lasers; laser diodes
42.79.Hp Optical processors, correlators, and modulators

Third‐order nonlinear optical susceptibilities of amorphous SnO2−x thin films

Hiroshi Endo, Mitsuhiro Sakai, Yuichi Watanabe, and Masasuke Takata

Appl. Phys. Lett. 62, 559 (1993); http://dx.doi.org/10.1063/1.108910 (2 pages) | Cited 5 times

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Amorphous SnO2−x (x=0–1) thin films are prepared on glass substrates by using a radio‐frequency magnetron sputtering technique and the third‐order nonlinear optical susceptibilities χ(3) (−3ω; ω, ω, ω) are evaluated by the third‐harmonic generation (THG) method. The values of χ(3) are found to increase with decreasing the oxygen content in the samples. The χ(3) of the present sample is larger by several times than that of crystalline SnO2 thin film in which the χ(3) is about 10−12 esu order. These values are very large among those for inorganic materials at the nonresonant region.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
78.66.Jg Amorphous semiconductors; glasses

Directional light coupling from microdisk lasers

A. F. J. Levi, R. E. Slusher, S. L. McCall, J. L. Glass, S. J. Pearton, and R. A. Logan

Appl. Phys. Lett. 62, 561 (1993); http://dx.doi.org/10.1063/1.108911 (3 pages) | Cited 79 times

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We describe methods for directional coupling of light output from whispering‐gallery mode microdisk lasers. Patterned asymmetries in the shape of microdisk resonators provide control of both direction and intensity of light output without dramatically increasing laser thresholds.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes

Absolute copper atom density determination in laser‐ablated copper plasmas using hook spectroscopy

Andrew D. Sappey, Thomas K. Gamble, and David K. Zerkle

Appl. Phys. Lett. 62, 564 (1993); http://dx.doi.org/10.1063/1.108912 (3 pages) | Cited 5 times

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Hook spectroscopy has been implemented to measure the absolute density of atomic species in a laser‐ablated plasma plume. We use the hook method to determine the density of copper atoms produced by ablation of a copper target in 25 Torr of helium at power densities of ∼1 GW/cm2. The measured copper densities when ablating into 25 Torr of helium backing gas range from 1.5×1015 cm−3 at a delay of 200 μs to 4.4×1013 cm−3 at 5 ms delay. This dramatic decrease in density is due to condensation of the metal vapor to form fine particulate.
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79.20.Ds Laser-beam impact phenomena
52.70.-m Plasma diagnostic techniques and instrumentation
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)

Electron‐temperature control by movable pins installed in a hollow cathode for discharge plasmas

N. Sato, S. Iizuka, T. Koizumi, and T. Takada

Appl. Phys. Lett. 62, 567 (1993); http://dx.doi.org/10.1063/1.108913 (3 pages) | Cited 12 times

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In order to control electron energy distributions in discharge plasmas, we have developed a new hollow cathode with pins inside. With an increase in the pin length, the electron temperature is observed to decrease continuously by an order of magnitude, being accompanied by a change of local plasma structure, in weakly magnetized low‐pressure Ar dc discharge plasmas.
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52.25.-b Plasma properties
52.75.-d Plasma devices
52.80.-s Electric discharges

Enhancement of low‐temperature critical epitaxial thickness of Si(100) with ion beam sputtering

Donald L. Smith, Chau‐Chen Chen, Greg B. Anderson, and Stig B. Hagstrom

Appl. Phys. Lett. 62, 570 (1993); http://dx.doi.org/10.1063/1.108884 (3 pages) | Cited 18 times

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See Also: Erratum

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We have grown Ar+ ion beam sputtered Si epitaxially on Si(100) at substrate temperatures, T, between 390 and 480 K. At 480 K and 0.65 nm/s deposition rate, epitaxy is sustained at 1 μm of film thickness. At lower T, we observed an abrupt transition to amorphous growth at a critical thickness, he, which exhibited an Arrhenius dependence on T, as has previously been observed in molecular beam epitaxy (MBE) [D. J. Eaglesham, H. J. Gossmann, and M. Cerullo, Phys. Rev. Lett. 65, 1227 (1990)]. Our slope, d(ln he)/d(1/T), was 3 times steeper than in MBE, resulting in much thicker he at the higher T. The steep slope shows that the high kinetic energy of the sputtered Si is not enhancing surface diffusion enough to overcome thermal surface diffusion. We propose instead that the arriving kinetic energy is preventing void formation and thereby decreasing the rate at which statistical surface roughness, Δh, increases with film thickness. In both deposition processes, we propose that the collapse of epitaxy occurs when Δh exceeds the thermal surface diffusion length.
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68.55.-a Thin film structure and morphology
81.15.Cd Deposition by sputtering

Study of tellurium precipitates in CdTe crystals

H. N. Jayatirtha, D. O. Henderson, A. Burger, and M. P. Volz

Appl. Phys. Lett. 62, 573 (1993); http://dx.doi.org/10.1063/1.108885 (3 pages) | Cited 10 times

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The effect of tellurium precipitates was studied in medium resistivity (103–106 Ω cm) undoped and Cl‐doped CdTe using differential scanning calorimetry (DSC) and mid‐infrared spectroscopy and the results were correlated with near‐infrared microscopy photographs. When present in a significant quantity (∼0.25 wt %), we show that Te precipitates are detectable using DSC measurements. In the mid‐infrared, the contribution of the absorption by free‐carriers is negligible, and therefore, the effect of the Te precipitates in these crystals can be considered uncoupled from the effects of Cd vacancies.
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61.72.Qq Microscopic defects (voids, inclusions, etc.)
81.10.Fq Growth from melts; zone melting and refining

High pressure synthesis of semiconducting Be‐doped polycrystalline cubic boron nitride and its electrical properties

T. Taniguchi, J. Tanaka, O. Mishima, T. Ohsawa, and S. Yamaoka

Appl. Phys. Lett. 62, 576 (1993); http://dx.doi.org/10.1063/1.108887 (3 pages) | Cited 23 times

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Be‐doped cubic boron nitride (c‐BN) powders, prepared at 5 GPa and 1700 °C by using Li3BN2 as a catalyst, were sintered at 7.7 GPa and 2100 °C without the addition of any sintering aids. The polycrystals so obtained were p‐type semiconductors as determined by the electric and thermoelectric methods. Nonlinear current‐voltage characteristics, showing similar behavior to that of varistors, were observed by a four‐probe method. The activation energy of the resistivity in the ohmic region at temperatures from 25 to 700 °C was about 0.3 eV.
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81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
72.80.Jc Other crystalline inorganic semiconductors

X‐ray photoelectron spectroscopy and cross‐sectional transmission electron microscopy studies of titanium nitride/titanium/silicon structures after thermal annealing

S. R. Ryu, D. S. Shin, J. E. Oh, J. S. Choi, S. H. Paek, S. I. Lee, J. K. Lee, T. U. Sim, J. G. Lee, and G. T. Sheng

Appl. Phys. Lett. 62, 579 (1993); http://dx.doi.org/10.1063/1.108861 (3 pages) | Cited 5 times

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Oxygen diffusion/incorporation behaviors of TiN/Ti/Si structures after thermal annealing in nitrogen ambients have been studied by x‐ray photoelectron spectroscopy and cross‐sectional transmission electron microscopy measurements. At the interface between Ti and TiN, titanium dioxides, thermodynamically most stable, are formed as a consequence of grain boundary diffusion, while inside TiN layer the contents of TiO and Ti2O3 compounds increases as the annealing temperature increases. At the interface between Ti and Si, titanium silicide formation is observed in the samples annealed above 450 °C consuming a part of pure Ti layer. One thing to note is that a severe blistering is observed in a sample annealed at 600 °C, probably caused by the difference of thermal expansion coefficients between TiSi2 and TiO2.
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66.30.J- Diffusion of impurities
68.60.Dv Thermal stability; thermal effects
68.35.Fx Diffusion; interface formation

Homoepitaxial growth of diamond thin films by electron cyclotron‐resonance microwave plasma chemical‐vapor‐deposition apparatus with CO/H2 gaseous source

Masaaki Komori, Tetsuro Maki, Taigen Kim, Gen Liang Hou, Yoshiyuki Sakaguchi, Ken Sakuta, and Takeshi Kobayashi

Appl. Phys. Lett. 62, 582 (1993); http://dx.doi.org/10.1063/1.108862 (3 pages) | Cited 7 times

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Homoepitaxy of the diamond thin films has been carried out by employing the ECR microwave plasma CVD apparatus with a CO/H2 gaseous source. From RHEED observation, it appeared that the surface morphology of (100) oriented film was much better than that of the (110) oriented. The (2×1) surface reconstruction remained unchanged even when the film was cooled down in H2 ambient after the epitaxy was completed. Although the synthetic diamond substrates had nonuniformity in their cathodoluminescence patterns, epitaxial films grown onto them offered uniform ones.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.60.Hk Cathodoluminescence, ionoluminescence

Semiconducting polymer‐buckminsterfullerene heterojunctions: Diodes, photodiodes, and photovoltaic cells

N. S. Sariciftci, D. Braun, C. Zhang, V. I. Srdanov, A. J. Heeger, G. Stucky, and F. Wudl

Appl. Phys. Lett. 62, 585 (1993); http://dx.doi.org/10.1063/1.108863 (3 pages) | Cited 383 times

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The characterization of rectifying heterojunctions (diodes) fabricated from a semiconducting polymer, a soluble derivative of poly(phenylene‐vinylene), and buckminsterfullerene, C60, are reported. Rectification ratios in the current versus voltage characteristics exceed 104. When illuminated, the devices exhibit a large photoresponse as a result of photoinduced electron transfer across the heterojunction interface from the semiconducting polymer (donor) onto C60 (acceptor). The photodiode and photovoltaic responses are characterized. Photoinduced electron transfer across the donor‐accepted rectifying heterojunction offers potential for photodetector and for solar cell applications.
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73.40.Ei Rectification
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Pz Photoconduction and photovoltaic effects

Intermittent ultraviolet irradiation for silicon selective epitaxial growth

N. Miyata, T. Yamazaki, Y. Arimoto, and T. Ito

Appl. Phys. Lett. 62, 588 (1993); http://dx.doi.org/10.1063/1.108864 (3 pages) | Cited 2 times

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We present a cyclic process of Si growth followed by ultraviolet (UV) irradiation which suppresses Si nucleation on the SiO2 surface. We grew Si using low pressure chemical vapor deposition with a Si2H6/H2 gas system without chlorine at 700 and 650 °C. Incubation period is determined using Auger electron spectroscopy as the time for which there is less than 0.015 coverage of Si on SiO2. We show that intermittent UV irradiation within the incubation period suppresses Si nucleation on the SiO2 surface. We believe the growth/UV‐irradiation cyclic process is useful for preparing a thick Si selective epitaxial growth layer.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.50.Bc Processes caused by infrared radiation
82.50.Hp Processes caused by visible and UV light

Ambient scanning tunneling spectroscopy of n‐ and p‐type gallium arsenide

J. A. Dagata and W. Tseng

Appl. Phys. Lett. 62, 591 (1993); http://dx.doi.org/10.1063/1.108865 (3 pages) | Cited 10 times

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Ambient scanning tunneling spectroscopy (STS) of n‐ and p‐doped GaAs (110) and (100) surfaces, prepared with a stable, electrically transparent surface oxide, reveals that the current‐voltage (I‐V) characteristics of these surfaces are essentially identical to the I‐V properties of the free (110) surface cleaved in ultrahigh vacuum. These results demonstrate for the first time that: (1) meaningful STS spectra of GaAs surfaces can be obtained in air, (2) the passivating layer, consisting of a stable, ultrathin oxide [J. A. Dagata, W. Tseng, J. Bennett, J. Schneir, and H. H. Harary, Appl. Phys. Lett. 59, 3288 (1991)], allows the scanning tunneling microscopy tip to probe the bulk electrical properties of the semiconductor, and (3) quantitative doping information, 1015<NA, ND<1019 cm−3, can be extracted from the STS data.
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68.37.-d Microscopy of surfaces, interfaces, and thin films
68.35.Dv Composition, segregation; defects and impurities
73.20.At Surface states, band structure, electron density of states

Thermal quenching and relaxation in doped hydrogenated amorphous silicon deposited by plasma‐enhanced chemical vapor deposition from He‐diluted silane

R. Meaudre, M. Meaudre, and P. Roca i Cabarrocas

Appl. Phys. Lett. 62, 594 (1993); http://dx.doi.org/10.1063/1.108866 (3 pages) | Cited 3 times

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The stability of n‐type and p‐type rf glow discharge amorphous silicon (a‐Si:H) deposited from silane‐helium mixtures has been studied. Dark dc conductivity measurements were made after quenching or slow cooling and the time dependence of isothermal relaxation at different temperatures has been investigated. The equilibration temperatures are ∼155 and ∼125 °C for n‐ and p‐type films, respectively. These values are greater than those commonly reported on conventional rf glow discharge films (130 and 90 °C). In comparison with conventional films, at any given temperature the relaxation times are longer with activation energies of 1 and 1.39 eV for n‐ and p‐type films. The improved stability of the films has been discussed in relation with their particular hydrogen‐related structure.
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73.61.Jc Amorphous semiconductors; glasses
73.50.-h Electronic transport phenomena in thin films
68.60.Dv Thermal stability; thermal effects

ZnO/CdS/CuInSe2 thin‐film solar cells with improved performance

Lars Stolt, Jonas Hedström, John Kessler, Martin Ruckh, Karl‐Otto Velthaus, and Hans‐Werner Schock

Appl. Phys. Lett. 62, 597 (1993); http://dx.doi.org/10.1063/1.108867 (3 pages) | Cited 153 times

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An important milestone in the development of photovoltaic thin‐film solar cells is the achievement of 15% conversion efficiency. This letter describes the highest efficiency single junction thin‐film cell reported to date. An active area efficiency of 14.8% is obtained with the cell structure n‐ZnO/n‐CdS/p‐CuInSe2 deposited on a soda‐lime glass substrate. The current achievements are due to improved properties of the CuInSe2 layer and the heterojunctions compared to previously reported results. The rate and substrate temperature profiles used during the coevaporation process yield a relatively large‐grained material with very strong 〈112〉 orientation and low porosity. This results in reduced recombination rates, hence higher open circuit voltage and fill factor.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Pz Photoconduction and photovoltaic effects
84.60.Jt Photoelectric conversion
85.60.Dw Photodiodes; phototransistors; photoresistors

Monolithic integration of a vertical cavity surface emitting laser and a metal semiconductor field effect transistor

Y. J. Yang, T. G. Dziura, T. Bardin, S. C. Wang, R. Fernandez, and Andrew S. H. Liao

Appl. Phys. Lett. 62, 600 (1993); http://dx.doi.org/10.1063/1.108868 (3 pages) | Cited 10 times

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Monolithic integration of a vertical cavity surface emitting laser (VCSEL) and a metal semiconductor field effect transistor (MESFET) is reported for the first time. The epitaxial layers for both GaAs VCSELs and MESFETs are grown on an n‐type GaAs substrate by molecular‐beam epitaxy (MBE) at the same time. The VCSELs with a 10 μm diam active region exhibit an average threshold current (Ith) of 6 mA and a continuous wave (cw) maximum power of 1.1 mW. The MESFETs with a 3 μm gate length have a transconductance of 50 mS/mm. The laser output is modulated by the gate voltage of the MESFETs and exhibits an optical/electrical conversion factor of 0.5 mW/V.
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42.82.Fv Hybrid systems
42.55.Px Semiconductor lasers; laser diodes
85.30.Tv Field effect devices
85.60.-q Optoelectronic devices

Symmetric Si/Si1−xGex electron resonant tunneling diodes with an anomalous temperature behavior

Ž. Matutinović‐Krstelj, C. W. Liu, X. Xiao, and J. C. Sturm

Appl. Phys. Lett. 62, 603 (1993); http://dx.doi.org/10.1063/1.108869 (3 pages) | Cited 5 times

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We report the fabrication of symmetric, n‐type resonant tunneling diodes grown by rapid thermal chemical vapor deposition in the Si/Si1−xGex material system. Up to four resonant features were observed for both positive and negative bias. This is the first time that such highly symmetric features are reported for electron resonant tunneling in the Si/SiGe material system. A peak‐to‐valley ratio of 2 was achieved at a temperature of 4 K and resonances were observed up to 240 K. An additional peak is observed at low voltages exhibiting an anomalous temperature behavior, disappearing at temperatures below 50 K. Models involving phonon absorption or emitter quantization are proposed to explain this behavior.
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73.40.Gk Tunneling
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Photon‐assisted avalanche spreading in reach‐through photodiodes

A. Lacaita, S. Cova, A. Spinelli, and F. Zappa

Appl. Phys. Lett. 62, 606 (1993); http://dx.doi.org/10.1063/1.108870 (3 pages) | Cited 19 times

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We have investigated the spreading of the avalanche process over the area of reach‐through avalanche photodiodes operated in Geiger mode. A comparison between the measurements and the results of a computer simulation suggests that photons emitted from hot carrier relaxations play the dominant role in the avalanche dynamics. It is the randomness of the photon‐assisted process which impairs the performance of these detectors in timing measurements.
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85.60.Dw Photodiodes; phototransistors; photoresistors
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.50.Fq High-field and nonlinear effects

Normal incidence intervalence subband absorption in GaSb quantum well enhanced by coupling to InAs conduction band

J. Katz, Y. Zhang, and W. I. Wang

Appl. Phys. Lett. 62, 609 (1993); http://dx.doi.org/10.1063/1.108871 (3 pages) | Cited 12 times

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We demonstrate a novel infrared (IR) detector structure based on the type II p‐doped InAs/GaSb multiquantum well system. Due to the coupling of the first conduction subband in InAs to the valence band states in GaSb, the normal incidence absorption coefficient for intervalence subband transitions between heavy and light hole subbands in GaSb quantum wells is significantly enhanced. An absorption coefficient as large as 6500 cm−1 has been achieved in the wavelength range of 8–17 μm. This is the strongest absorption ever observed among all the IR materials in this wavelength range.  
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78.66.Fd III-V semiconductors
78.30.Fs III-V and II-VI semiconductors
85.60.Gz Photodetectors (including infrared and CCD detectors)

Comparison of boron diffusion in Si and strained Si1−xGex epitaxial layers

P. Kuo, J. L. Hoyt, J. F. Gibbons, J. E. Turner, R. D. Jacowitz, and T. I. Kamins

Appl. Phys. Lett. 62, 612 (1993); http://dx.doi.org/10.1063/1.108872 (3 pages) | Cited 64 times

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We have investigated boron diffusion in Si and strained Si1−xGex, in situ doped, epitaxial layers. During inert ambient annealing at 860 °C, boron diffusion is observed to be slower in Si0.83Ge0.17 than in Si for boron concentration levels between 5×1016 and 2.5×1019 cm−3. Computer simulations of the measured boron profiles for annealed samples indicate that the effective boron diffusivity Deff in Si0.83Ge0.17 is approximately an order of magnitude lower than that in Si. This disparity is found to increase with increasing boron concentration.
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66.30.J- Diffusion of impurities
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.uf Ge and Si
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