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22 Feb 1993

Volume 62, Issue 8, pp. 793-901

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Highly thermally stable electrical compensation in oxygen implanted p‐InAlAs

Ph. Krauz, E. V. K. Rao, H. Thibierge, and J. C. Harmand

Appl. Phys. Lett. 62, 867 (1993); http://dx.doi.org/10.1063/1.108549 (3 pages) | Cited 4 times

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The electrical compensation induced by oxygen ion implants in Be doped p‐type In0.52Al0.48As epilayers has been investigated. By performing hot implants (∼250 °C) and high temperature (as high as 800 °C) furnace anneals, we have ascertained the formation of thermally stable electrically compensated layers. Similar data obtained by varying oxygen implant dose and Be background doping level are permitted to confirm unambiguously the involvement of oxygen atoms in the compensation mechanism. These results are satisfactorily explained assuming the formation of a deep donor center involving the participation of oxygen atoms.
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61.72.uj III-V and II-VI semiconductors
71.55.Eq III-V semiconductors
72.80.Ey III-V and II-VI semiconductors
66.30.J- Diffusion of impurities

Negative longitudinal resistance in a mesoscopic wire

D. R. S. Cumming, R. J. Blaikie, and H. Ahmed

Appl. Phys. Lett. 62, 870 (1993); http://dx.doi.org/10.1063/1.108550 (3 pages) | Cited 2 times

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We have demonstrated that a negative four‐terminal longitudinal resistance may be measured in a mesoscopic wire with a long electron mean free path. This is a geometrical effect which arises when the voltage probes nearest to the current source are shadowed in such a way that direct ballistic transport of electrons into these probes is not possible. A billiard ball model is used to simulate the magnetoresistance of the fabricated wires and the effects of diffuse boundary scattering and random impurity scattering are used to give a good explanation of our measurements.
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73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.50.Dn Low-field transport and mobility; piezoresistance
73.50.Bk General theory, scattering mechanisms

Structural properties of partially relaxed InxGa1−xAs layers grown on (100) and misoriented GaAs substrates

P. Maigné and A. P. Roth

Appl. Phys. Lett. 62, 873 (1993); http://dx.doi.org/10.1063/1.108551 (3 pages) | Cited 10 times

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We report an x‐ray diffraction study of partially relaxed In(0.20)Ga(0.80)As layers grown simultaneously on (100) GaAs substrates and misoriented GaAs substrates. We have measured the magnitude and direction of the tilt between (100) InGaAs and GaAs planes, as well as the relaxation coefficients in 〈011〉 directions. Our results show that in many respects, the misorientation of the substrates strongly influences the relaxation of the mismatch strain. The magnitude of the tilt is always larger on misoriented substrates and approximately twice the value measured on flat substrates. The direction of the tilt changes with increasing thickness and the two directions are always 135° apart from one type of substrate to the other. In addition, for thin layers, the residual strain is about five times larger on misoriented substrates but becomes comparable for both orientations, when the layers relax further.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Evidence for an alternative, hole‐trapping related random telegraph signal mechanism in n‐channel silicon‐on‐insulator metal‐oxide‐semiconductor transistors

E. Simoen and C. Claeys

Appl. Phys. Lett. 62, 876 (1993); http://dx.doi.org/10.1063/1.108552 (3 pages) | Cited 3 times

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In this letter, evidence will be given for an alternative random telegraph signal (RTS) mechanism in silicon‐on‐insulator (SOI) metal‐oxide‐semiconductor transistors (MOSTs). It will be demonstrated that anomalous RTS behavior is observed in floating‐film operated SOI nMOSTs. The experimental results strongly suggest that the origin of the drain current switching is related to trapping of holes, most likely by a defect center in the Si overlayer. This is in contrast to the normal RTSs which are caused by electron trapping by an interface near‐oxide trap.
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72.70.+m Noise processes and phenomena
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
85.30.Tv Field effect devices

Growth of diamond films: General correlation between film morphology and plasma emission spectra

G. Balestrino, M. Marinelli, E. Milani, A. Paoletti, I. Pinter, A. Tebano, and P. Paroli

Appl. Phys. Lett. 62, 879 (1993); http://dx.doi.org/10.1063/1.108553 (3 pages) | Cited 48 times

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We have studied the emission spectra from plasmas excited in several compositions of three different gas mixtures useful for the growth of diamond films, namely CH4‐H2 (the classical one), CH4‐CO2 and C2H2‐CO2 (not previously reported by other authors). In all three cases we find the same correlation between the quality of the obtained diamond films and some spectral features: in particular, the yield of the best diamond films corresponds to the presence of the emission line at wavelength 431 nm ascribed to CH, in the absence of the emission band at 505–517 nm attributed to C2. The appearance and the progressive increase of the latter corresponds to a gradual worsening of the diamond film quality. We propose such spectral features of the plasma as a general and practical gauge of the diamond film growth conditions, for any gas mixture used.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Electrical and optical properties of InP grown by metalorganic vapor phase epitaxy with extremely low V/III ratios using tertiarybutylphosphine

M. Horita, M. Suzuki, and Y. Matsushima

Appl. Phys. Lett. 62, 882 (1993); http://dx.doi.org/10.1063/1.108554 (3 pages) | Cited 5 times

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Metalorganic vapor phase epitaxy of InP with extremely low V/III ratios less than 10 was successfully carried out by using tertiarybutylphosphine, and detailed electrical and optical properties were investigated for the first time. Featureless surface morphology was obtained even with a V/III ratio of as low as 3. Good electrical properties, such as carrier concentrations of about 6×1014 cm−3 and electron Hall mobilities more than 30 000 cm2/V s measured at 77 K were confirmed, although both Van der Pauw and low‐temperature photoluminescence results proved the increased acceptor concentrations in the low V/III ratio range.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
73.61.Ey III-V semiconductors
78.66.Fd III-V semiconductors

Large refractive index enhancement in PbTe/Pb1−xEuxTe multiquantum‐well structures

Shu Yuan, H. Krenn, G. Springholz, G. Bauer, and M. Kriechbaum

Appl. Phys. Lett. 62, 885 (1993); http://dx.doi.org/10.1063/1.108555 (3 pages) | Cited 16 times

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Optical interband absorption between confined carrier states is studied in PbTe/Pb1−xEuxTe multiple quantum wells (MQWs). The frequency dependence of the refractive index is calculated by the Kramers–Kronig transformation of the absorption coefficient of the MQWs. It is shown that the observed interference fringes in mid‐infrared transmission can only be accounted for if the enhancement of the refractive index η(ω) at the interband transition energies which follow from the Kramers–Kronig transformation are taken into account. These changes in η are as large as 19% (at T=77 K) and are thus relevant for the design and fabrication of mid‐infrared QW lasers.
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78.66.Hf II-VI semiconductors
78.30.Fs III-V and II-VI semiconductors
42.55.Px Semiconductor lasers; laser diodes

Strong photoluminescence from AlP/GaP disordered superlattice grown by atmospheric pressure organometallic vapor phase epitaxy using tertiarybutylphosphine

Xue‐Lun Wang, Akihiro Wakahara, and Akio Sasaki

Appl. Phys. Lett. 62, 888 (1993); http://dx.doi.org/10.1063/1.108556 (3 pages) | Cited 18 times

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AlP/GaP disordered superlattices (d‐SLs) are grown for the first time by atmospheric pressure organometallic vapor phase epitaxy using tertiarybutylphosphine as the phosphorous source. Strong photoluminescence (PL) is observed from the d‐SL, comparing with the ordered superlattice (o‐SL) and the bulk alloy (b‐AL). The PL intensity of the d‐SL is 158 times stronger than that of the o‐SL and 114 times than that of the b‐AL. The strong PL from the d‐SL is attributed to the localized states created by the artificial disordering.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Ga0.47In0.53As multiquantum well heterostructures, confined by pseudoquaternary (InP)n/(Ga0.47In0.53As)m short period superlattices lattice‐matched to InP

M. L. Dotor, P. Huertas, D. Golmayo, and F. Briones

Appl. Phys. Lett. 62, 891 (1993); http://dx.doi.org/10.1063/1.108557 (3 pages) | Cited 7 times

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(InP)n/(Ga0.47In0.53As)m lattice‐matched short‐period superlattices have been used as pseudoquaternary material to confine Ga0.47In0.53As multiquantum wells in a GaxIn1−xAs/GaxIn1−xAsyP1−y/InP heterostructure. The samples have been grown by low‐temperature atomic layer molecular beam epitaxy, using fast operating valved solid sources to generate P2 and As4 beams. X‐ray diffraction was used to assess the structural quality of the samples. The effect of the superlattice period on the pseudoquaternary band gap is reported. Room‐temperature photoluminescence wavelength of the multiquantum well structure is close to 1.55 μm. Growing short‐period superlattices results in a much easier method to control band‐gap energy than growing alternative quaternary material.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.55.Cr III-V semiconductors

Rapid deposition of high temperature YBa2Cu3O 7−x superconducting thin films directly on silver substrates

W. Tao, M. P. Yuan, H. T. Huang, X. Z. Liao, X. M. Xie, H. L. Zhou, and Z. L. Wu

Appl. Phys. Lett. 62, 894 (1993); http://dx.doi.org/10.1063/1.108558 (2 pages) | Cited 3 times

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The superconducting YBa2Cu3O7−x (YBCO) films have been deposited directly on silver (Ag) substrates by metalorganic chemical vapor deposition. Critical current density (Jc) as high as 1.4×104 A/cm2 (0 T, 77.3 K) was obtained. The high Jc was attributed to the small, compact grains of the YBCO films.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
74.78.-w Superconducting films and low-dimensional structures
74.72.-h Cuprate superconductors

100 GHz oscillations on monolithic high Tc chip

J. Edstam, P‐Å. Nilsson, E. A. Stepantsov, and H. K. Olsson

Appl. Phys. Lett. 62, 896 (1993); http://dx.doi.org/10.1063/1.108559 (3 pages) | Cited 4 times

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We have coupled 80–180 GHz oscillations from a HTc Josephson junction onto an on‐chip YBa2Cu3O7/SiO/Au microstrip resonator. Efficient coupling was achieved at the resonance frequencies and both resonance frequency and Q value could be measured from the I‐V curve. The use of a superconductor in the microstrip gave negligible dispersion (<4%) from 80 to 180 GHz, whereas the attenuation of 4–8 dB/nm originated mainly from the normal metal groundplane.
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85.25.Dq Superconducting quantum interference devices (SQUIDs)
85.25.Cp Josephson devices
74.25.N- Response to electromagnetic fields
74.78.-w Superconducting films and low-dimensional structures

Diamond growth by laser‐driven reactions in a CO/H2 mixture

J. H. D. Rebello, V. V. Subramaniam, and T. S. Sudarshan

Appl. Phys. Lett. 62, 899 (1993); http://dx.doi.org/10.1063/1.108560 (3 pages) | Cited 3 times

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Diamond growth is observed on diamond‐abraded single crystal Si(111) substrates from a 99.3%H2/0.7%CO gas mixture at a total pressure of 8 Torr. The gas mixture is reacted by using 193 nm irradiation from an ArF excimer laser. Multiphoton dissociation of CO takes place via the a3Π state, with subsequent chemical reactions between C and O fragments and hydrogen. Of importance is the fact that we observe significant diamond particle growth within a period of 1 h on unheated substrates. This research represents the first known effort where diamond growth is observed at room temperature.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
82.50.Bc Processes caused by infrared radiation
82.50.Hp Processes caused by visible and UV light
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