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1 Mar 1993

Volume 62, Issue 9, pp. 907-1028

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Self‐enhanced diffraction from fixed photorefractive gratings during coherent reconstruction

Mordechai Segev, Anthony Kewitsch, Amnon Yariv, and George A. Rakuljic

Appl. Phys. Lett. 62, 907 (1993); http://dx.doi.org/10.1063/1.108515 (3 pages) | Cited 9 times

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We explore, theoretically and experimentally, the effects of self‐enhancement (or self‐depletion) of the diffraction which occurs during coherent reconstruction from fixed photorefractive gratings. These effects are caused by interference between a secondary grating, which forms between the readout and the reconstructed beams, and the fixed grating.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.40.-i Holography

Passive mode locking in erbium fiber lasers with negative group delay

M. E. Fermann, M. J. Andrejco, M. L. Stock, Y. Silberberg, and A. M. Weiner

Appl. Phys. Lett. 62, 910 (1993); http://dx.doi.org/10.1063/1.108516 (3 pages) | Cited 19 times

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100 fs pulses are generated in passively mode‐locked erbium fiber lasers with small negative group‐velocity dispersion. The pulses are obtained at a pump power significantly higher than the mode‐locking threshold. An optimization of fiber lengths leads to the elimination of pedestal formation and the generation of stable pulse trains with high contrast ratios.
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42.55.Wd Fiber lasers
42.60.Fc Modulation, tuning, and mode locking

Propagation loss of index imaged poly(cyclohexylsilyne) thin film optical waveguides

L. A. Hornak and T. W. Weidman

Appl. Phys. Lett. 62, 913 (1993); http://dx.doi.org/10.1063/1.108517 (3 pages) | Cited 5 times

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The propagation loss of optical waveguides index imaged in a 0.5 μm poly(cyclohexylsilyne) (PCHS) film through photo‐oxidative cross linking with ultraviolet exposure at 310 nm is measured and compared to an experimental estimate of PCHS bulk propagation loss. Measured waveguide losses at 632.8 nm range from 0.6 dB/cm for TE operation of 2‐μm‐wide PCHS waveguides to 2.1 dB/cm for TM operated 4‐μm‐wide guides. Comparison to the bulk PCHS propagation loss estimate of 0.04 dB/cm at 632.8 nm indicates a significant increase in loss upon thin film waveguide fabrication.
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78.66.Qn Polymers; organic compounds
42.70.Jk Polymers and organics
42.79.Gn Optical waveguides and couplers

Self‐stabilization of fundamental in‐phase mode in resonant antiguided laser arrays

R. F. Nabiev, P. Yeh, and D. Botez

Appl. Phys. Lett. 62, 916 (1993); http://dx.doi.org/10.1063/1.108518 (3 pages) | Cited 4 times

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See Also: Erratum

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The effect of gain spatial hole burning on antiguided arrays is analyzed for the first time. Nonresonant devices, due to the nonuniformity of the in‐phase‐mode intensity profile, experience self‐focusing and multimode operation with increasing drive level, similar to the behavior of evanescent‐wave‐coupled devices. Resonant and near‐resonant devices [i.e., resonant‐optical‐waveguide (ROW) arrays], due the uniformity of the in‐phase mode, display some mild defocusing with increasing drive level, while the nearest high‐order mode cannot reach threshold to drive levels in excess of 4× threshold. These results explain the fundamental single‐mode stability of ROW arrays, in excellent agreement with experimental data.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Fabry–Perot reflectance modulator for 1.3 μm from (InAlGa)As materials grown at low temperature

I. J. Fritz, B. E. Hammons, A. J. Howard, T. M. Brennan, and J. A. Olsen

Appl. Phys. Lett. 62, 919 (1993); http://dx.doi.org/10.1063/1.108519 (3 pages) | Cited 17 times

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We report the first all‐semiconductor Fabry–Perot‐cavity reflectance modulators operating at wavelengths of 1.32–1.33 μm. These devices were grown on a GaAs substrate using an intermediate, linearly graded InGaAs buffer layer terminating in an In0.33Ga0.67As layer. The Bragg reflector stacks of the Fabry–Perot structure are composed of InGaAs and InAlAs layers lattice matched to the buffer, and the active cavity region is an In0.4Ga0.6As/In0.26Al0.35Ga0.39As strained‐layer superlattice. The key to obtaining device‐quality material was low temperature growth (∼400 °C) of the entire structure. For a device with a 0.38‐μm‐thick active region and a 4 dB insertion loss, we obtained a contrast ratio of ∼3:1 at 4 V bias.
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42.79.Hp Optical processors, correlators, and modulators
78.66.Fd III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Self‐pulsing, spectral bistability, and chaos in a semiconductor laser diode with optoelectronic feedback

Chang‐Hee Lee and Sang‐Yung Shin

Appl. Phys. Lett. 62, 922 (1993); http://dx.doi.org/10.1063/1.108520 (3 pages) | Cited 11 times

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We observed experimentally self‐pulsing, subharmonic generation, spectral bistability, and chaos in a stable semiconductor laser diode with delayed optoelectronic feedback. The laser diode emits 200 ps optical pulses with 1.1 GHz repetition rate in the self‐pulsing region, and the bistable region is critically dependent on the closed loop gain of the system. Theoretical explanations of observed experimental results are also given.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Mi Dynamical laser instabilities; noisy laser behavior

High‐speed all‐optical switching experiment in Mach–Zehnder configuration using GaAs waveguide

S. Nakamura, K. Tajima, N. Hamao, and Y. Sugimoto

Appl. Phys. Lett. 62, 925 (1993); http://dx.doi.org/10.1063/1.108521 (3 pages) | Cited 8 times

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We report the results of a high‐speed all‐optical switching experiment in Mach–Zehnder configuration using a GaAs waveguide. The all‐optical switching is based on the nonlinear refractive index change induced by the band‐filling effect in the GaAs waveguide. To achieve high‐speed operation without being limited by the slow carrier relaxation time, a dc electric field is externally applied to the nonlinear waveguide to sweep carriers away from the light guiding region. The FWHM (full width at half maximum) of the switching waveform without the externally applied electric field is about 800–900 ps. As the electric field is increased, the FWHM is reduced to about 80–90 ps.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.79.Hp Optical processors, correlators, and modulators
78.66.Fd III-V semiconductors

Enhanced Tm3+ blue emission in Tm, Yb, co‐doped fluorophosphate glasses due to back energy transfer processes

G. Özen, J. P. Denis, Ph. Goldner, Xu Wu, M. Genotelle, and F. Pellé

Appl. Phys. Lett. 62, 928 (1993); http://dx.doi.org/10.1063/1.108522 (3 pages) | Cited 9 times

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Up‐conversion emission spectra of fluorophosphate glasses doped with Tm3+ and co‐doped with Tm3+ and Yb3+ ions were obtained under two different excitation wavelengths (657 and 683 nm). Both samples show a stronger emission centered at 450 nm than the ones centered at 478 and 363 nm when 3F2 level of Tm3+ is excited at 657 nm. If 3F3 level of Tm3+ is excited with the 683 nm light the 478 nm emission of the double doped sample becomes much stronger (about 200 times) than the same emission of the single doped sample. We propose an up‐conversion mechanism to explain the spectra which is in agreement with quadratic dependence of the emission intensities on the excitation power under both excitations.
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42.70.Hj Laser materials
78.55.Hx Other solid inorganic materials

Design considerations of large aperture perpendicular gratings semiconductor ring lasers

A. Hardy, K. M. Dzurko, D. F. Welch, D. R. Scifres, R. J. Lang, and R. Waarts

Appl. Phys. Lett. 62, 931 (1993); http://dx.doi.org/10.1063/1.108523 (3 pages) | Cited 1 time

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A new laser geometry, recently demonstrated, is analyzed. The laser cavity consists of two orthogonally oriented diffraction gratings faced by two plane boundaries, such as cleaved facets. It is shown that such lasers may operate at a single, very high mode order with excellent modal discrimination.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Room temperature 10 MHz electro‐optic modulation in ferroelectric liquid crystals

Jian‐Yu Liu, Kristina M. Johnson, and Michael G. Robinson

Appl. Phys. Lett. 62, 934 (1993); http://dx.doi.org/10.1063/1.108524 (3 pages) | Cited 1 time

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We report high frequency (≳10 MHz) electro‐optic (EO) modulation using a chiral smectic C∗ ferroelectric liquid crystal (FLC). Results indicate that the r32 coefficient of the commercially available chiral smectic FLC SCE9 is ≊3 pm/V.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
42.79.Hp Optical processors, correlators, and modulators

Deposition of dense hydrocarbon films from a nonbiased microwave plasma

A. von Keudell, W. Möller, and R. Hytry

Appl. Phys. Lett. 62, 937 (1993); http://dx.doi.org/10.1063/1.108525 (3 pages) | Cited 40 times

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An electron cyclotron resonance plasma was used to prepare C:H layers from methane. The temperature dependence of the deposition rate was investigated at substrate temperatures ranging from room temperature to 700 K, at a gas pressure of 1.6 Pa. Despite low ion energies corresponding to the plasma potential, transparent hard coatings were obtained at elevated temperature with a density up to 2 g cm−3. A deposition model is proposed which describes the growth from an adsorbed layer, including surface reactions with radicals and atomic hydrogen as well as the direct incorporation of ions. Two different deposition processes can be identified, yielding polymerlike films in the temperature range up to 450 K and dense hydrocarbons above this temperature. The observed temperature dependence of the film properties such as H/C ratio, index of refraction, and density is consistent with the predictions of the model.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Ion bombardment energy distributions in a radio frequency induction plasma

J. Hopwood

Appl. Phys. Lett. 62, 940 (1993); http://dx.doi.org/10.1063/1.108526 (3 pages) | Cited 83 times

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Ion bombardment energy distributions to a grounded substrate in a low pressure, rf induction plasma source are measured. The plasma source consists of a planar, spiral coil driven at 13.56 MHz which is separated from a low pressure discharge vessel by a quartz vacuum window. Ion bombardment spectra were determined using a differentially pumped retarding grid energy analyzer which samples the plasma through an 80 μm diam grounded, conducting orifice. The ion flux was found to be nearly monoenergetic for heavier ionic species such as Ar and oxygen. A double‐peaked distribution was observed in water vapor plasmas where the sheath transit time of light ions is much less than the rf period. The average ion energy follows the average plasma potential and the width of the ion energy distribution correlates with the rf component of the floating probe potential, which is typically 2–6 Vp–p.
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52.25.-b Plasma properties
52.75.-d Plasma devices
81.65.-b Surface treatments

Cobalt self‐diffusion during cobalt silicide growth

M. Diale, C. Challens, and E. C. Zingu

Appl. Phys. Lett. 62, 943 (1993); http://dx.doi.org/10.1063/1.108527 (3 pages) | Cited 2 times

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The flux of atoms during Si/Co interdiffusion has been investigated by means of thin tantalum marker layers imbedded in the deposited Co layer. The silicide phase CoSi is found to grow in the Si/CoSi/Co structure without any conversion of CoSi to Co2Si. Cobalt is found to be the dominant diffusing species in CoSi during its growth in Si/CoSi/Co structures. Cobalt atoms are also found to diffuse in the unreacted Co layer from the Co surface towards the CoSi/Co interface. These results present evidence that some of the Co vacancies in the metal silicide layer are annihilated at the Co surface.
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66.30.-h Diffusion in solids
61.72.J- Point defects and defect clusters

Epitaxial growth of lithium niobate thin films from a single‐source organometallic precursor using metalorganic chemical vapor deposition

Alex A. Wernberg, Henry J. Gysling, Albert J. Filo, and Thomas N. Blanton

Appl. Phys. Lett. 62, 946 (1993); http://dx.doi.org/10.1063/1.108528 (3 pages) | Cited 36 times

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Lithium niobate thin films were deposited on (0001) sapphire using metalorganic chemical vapor deposition. An organometallic compound, formed by reaction of lithium dipivaloylmethanate and niobium(V) ethoxide, was used as a single‐source precursor. The epitaxial nature of the films was established by x‐ray diffraction and Rutherford backscattering analyses (RBS).
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Influence of arsenic adsorption layers on heterointerfaces in GaInAs/InP quantum well structures

W. Seifert, X. Liu, and L. Samuelson

Appl. Phys. Lett. 62, 949 (1993); http://dx.doi.org/10.1063/1.108529 (3 pages) | Cited 10 times

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The 5 K photoluminescence of GaInAs/InP QWs a few monolayers in thickness has been used as a probe for investigating the influence of AsH3 concentration and growth temperature on the formation of additional interface layers between the GaInAs of the QW and the InP barrier. Increasing AsH3 concentrations and decreasing growth temperatures shift the QW peak energies to longer wavelengths, i.e., they increase the effective thickness of the QWs. The effect is discussed in terms of different growth regimes in MOVPE with different arsenic coverages of the GaInAs surface in analogy to (001) GaAs with (2×4)‐like or c(4×4)‐like arsenic‐terminated surfaces. In the latter case the excess As is an effective source for As carry‐over into the upper InP barrier of the QW resulting in the formation of graded InAsxP1−x interface layers.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors

Pulsed laser deposition of high quality LiNbO3 films on sapphire substrates

A. M. Marsh, S. D. Harkness, F. Qian, and R. K. Singh

Appl. Phys. Lett. 62, 952 (1993); http://dx.doi.org/10.1063/1.108530 (3 pages) | Cited 43 times

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High quality lithium niobate thin films were deposited onto R‐cut sapphire substrates (α‐Al2O3) by the pulsed laser deposition method. To stabilize single phase LiNbO3, relatively high oxygen partial pressure was required. X‐ray diffraction results of these films, fabricated at an oxygen pressure of 1 Torr, showed only (012) and (024) peaks from lithium niobate. The lowering of the oxygen partial pressure or addition of argon in the ambient gas resulted in formation of intermediary phases. The substrate temperature above 650 °C did not have a significant effect on the thin‐film quality. Optical measurements on the films deposited under a wide variety of chamber pressures indicated an index of refraction of 2.28, corresponding to the ideal value of bulk LiNbO3.  
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81.15.Fg Pulsed laser ablation deposition
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

High‐power index‐guided distributed out‐coupled grating surface emitting laser‐amplifiers with narrow spectra and high‐quality beams

J. H. Abeles, P. K. York, J. T. Andrews, W. F. Reichert, J. B. Kirk, N. A. Hughes, C. G. Dupuy, J. T. McGinn, J. H. Thomas, T. J. Zamerowski, S. K. Liew, J. C. Connolly, N. W. Carlson, G. A. Evans, and J. K. Butler

Appl. Phys. Lett. 62, 955 (1993); http://dx.doi.org/10.1063/1.108531 (3 pages)

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Emission of a 100 mW cw beam into a nearly diffraction limited near‐circular spot by a grating surface emitting (GSE) semiconductor laser, with radiance of 5.3×106 W/sr cm2, is described. The distributed out‐coupled master oscillator power amplifier (DOC‐MOPA) devices comprise active grating outcoupled power amplifiers and monolithic distributed feedback laser oscillators. With single wavelength (930 nm) operation demonstrated to 260 mW, they produce narrow linewidth (10 MHz) beams and near‐ideal far‐field patterns. The DOC‐MOPA promises to become an efficient, compact source of high‐quality ≥1 W cw light. Such fully collimated high power cw beams demonstrate the potential of GSE lasers to serve in systems requiring higher power than available from conventional edge‐emitting technology.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Electronic states created in p‐Si subjected to plasma etching: The role of inherent impurities, point defects, and hydrogen

O. O. Awadelkarim, T. Gu, P. I. Mikulan, R. A. Ditizio, S. J. Fonash, K. A. Reinhardt, and Y. D. Chan

Appl. Phys. Lett. 62, 958 (1993); http://dx.doi.org/10.1063/1.108532 (3 pages) | Cited 15 times

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Reactive ion etching and magnetically enhanced reactive ion etching with CHF3/O2 are employed to remove SiO2 from boron‐doped Si substrates. Etch‐induced gap states in the substrate are monitored using deep‐level transient spectroscopy. The dominant state is found to be a donor with a hole binding energy of 0.36 eV. The state has been identified as that of the carbon‐interstitial oxygen‐interstitial pair. The depth profile of the pair is determined by two competing mechanisms: the pair generation and its electrical deactivation by atomic hydrogen. The latter process is especially prevalent in the presence of a magnetic field.  
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61.80.Jh Ion radiation effects
81.65.-b Surface treatments
71.55.Cn Elemental semiconductors

Very thin CoSi2 films by Co sputtering

W. P. Maszara

Appl. Phys. Lett. 62, 961 (1993); http://dx.doi.org/10.1063/1.108533 (3 pages) | Cited 7 times

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The structure, resistivity, and thermal stability of CoSi2 films ranging in thickness from ∼11 to 52 nm were investigated. Both the bulk and the surface components of the resistivity were extracted. The films exhibited good thermal stability. The thermal stability and the silicidation temperature which gave the minimum film sheet resistance were found to increase with the sputtered film thickness. The sheet resistance was independent of the ramp‐up rate (3–20 °C/s), prolonged exposure of the Co film to air, and the presence of native oxides on the Si surface prior to Co deposition.
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68.55.-a Thin film structure and morphology
68.60.Dv Thermal stability; thermal effects
73.61.Le Other inorganic semiconductors
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Magnetic field dependence of selective pair luminescence in GaAs

D. C. Reynolds, P. W. Yu, K. R. Evans, C. E. Stutz, and J. Loehr

Appl. Phys. Lett. 62, 964 (1993); http://dx.doi.org/10.1063/1.108534 (3 pages) | Cited 1 time

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The shift in the final state emission energy, resulting from selective pair luminescence in an applied magnetic field in GaAs, is very small. Any shift that is observed is toward lower energy. The relatively constant emission energy in the presence of an applied magnetic field is realized because the increase in band‐gap energy, which would shift the emission toward higher energies, is offset by an increase in the donor binding energy which shifts the emission toward lower energies. The acceptor binding energy is essentially constant with applied field while the change in the Coulomb term, due to a change in the pair separation in a magnetic field, is quite small. As a result, the same acceptor excited states are identified in the presence of an applied magnetic field, as in zero field for the same pump energy. The results of this experiment are limited to applied fields ≤36 kG.
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71.55.Eq III-V semiconductors
78.55.Cr III-V semiconductors

Study of growth temperature in gas‐source molecular‐beam epitaxy growth of InGaAs/GaAs quantum well lasers

G. Zhang, A. Ovtchinnikov, and M. Pessa

Appl. Phys. Lett. 62, 967 (1993); http://dx.doi.org/10.1063/1.108535 (3 pages) | Cited 3 times

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Strained‐layer InGaAs/GaAs single quantum well lasers were grown by gas‐source molecular‐beam epitaxy at temperatures between 430 and 610 °C. The optimum growth temperature for the quantum wells of the lasers was found to be about 520 °C, as deduced from the measurement of threshold current density of the lasers and room‐temperature photoluminescence (PL) of the quantum wells. If the growth temperature is lower than 520 °C, the threshold current density dramatically increases due to the formation of nonradiative carrier recombination centers in the quantum well. These recombination centers originate from lattice mismatch defects and alloy disordering. If the growth temperature is higher than 520 °C, indium desorption and segregation become increasingly severe. Thus, at high growth temperature, the InGaAs/GaAs interfaces become rough and the threshold current density increases. In addition, rapid thermal annealing was observed to remove most of the nonradiative recombination centers from the quantum wells and to improve the threshold current density of the lasers and PL intensity of the quantum wells.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Denuded zone formation in carbon‐implanted silicon and its application to device quality silicon‐on‐insulator preparation

Q.‐Y. Tong, H.‐M. You, G. Cha, and U. Gösele

Appl. Phys. Lett. 62, 970 (1993); http://dx.doi.org/10.1063/1.108536 (3 pages) | Cited 7 times

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For producing ultrathin (<0.1 μm) device quality silicon‐on‐insulator (SOI) films, commercially available 4‐in. diameter (100) SOI wafers with single‐crystal layer thickness of 1.5±0.5 μm were carbon‐implanted (190 keV and 3×1016 cm−2) followed by bonding to oxidized Si wafers. The buried oxide in the SOI wafers was used as the first etch stop and the second etch was stopped at the implanted carbon peak. The formation of a carbon denuded zone allowed us to obtain ≤900±50 Å SOI films free of carbon precipitation. Since precision polishing to thin one wafer of a bonded pair down to ±0.5 μm in thickness variation is available in industry, it should be possible to start the described SOI process with a bulk Si wafer, rather than an expensive SOI wafer, and obtain similar results.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.65.-b Surface treatments

Reliability characteristics of metal‐oxide‐semiconductor capacitors with chemical vapor deposited Ta2O5 gate dielectrics

G. Q. Lo, D. L. Kwong, and S. Lee

Appl. Phys. Lett. 62, 973 (1993); http://dx.doi.org/10.1063/1.108537 (3 pages) | Cited 6 times

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This letter discusses the reliability characteristics of metal‐oxide‐semiconductor capacitors with chemical‐vapor‐deposited Ta2O5 gate dielectric films. To be compatible with the conventional polycrystalline Si‐gate process, SiO2 or Si3N4 film was deposited on Ta2O5 as the top dielectric layer. It is found that under high‐field stress, interface state generation is enhanced with the presence of the top dielectric layers, probably due to the anode‐field increase caused by the positive‐charge buildup in the stacked dielectrics capacitors. The significant positive‐charge build‐up in capacitors with top dielectrics is believed to be due to the hole‐injection‐barrier from Ta2O5 to SiO2 or Si3N4 and/or damage creation in the Ta2O5 films.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Tv Field effect devices
77.55.-g Dielectric thin films

Planar p‐on‐n HgCdTe heterostructure photovoltaic detectors

J. M. Arias, J. G. Pasko, M. Zandian, S. H. Shin, G. M. Williams, L. O. Bubulac, R. E. DeWames, and W. E. Tennant

Appl. Phys. Lett. 62, 976 (1993); http://dx.doi.org/10.1063/1.108538 (3 pages) | Cited 36 times

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We report a process to fabricate planar Hg1−yCdyTe/Hg1−xCdxTe (x<y) heterostructure photodiodes with the p‐on‐n configuration. The material used for this demonstration was grown by molecular beam epitaxy. The p‐on‐n planar devices consist of an arsenic‐doped p‐type epilayer (y=0.28) on top of a long wavelength infrared n‐type epilayer (x=0.225, λ=10 μm). The planar junctions were formed by selective pocket diffusion of arsenic deposited by ion implantation. The detailed analysis of the current‐voltage characteristics of these diodes as a function of temperature show that they have high performance and that their dark currents are diffusion limited down to 52 K. The results also show that the R0A values for these devices are highly uniform at 77 K.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.40.Hp Lithography, masks and pattern transfer
73.50.Pz Photoconduction and photovoltaic effects

Strong improvement of diffusion length by phosphorus and aluminum gettering

M. Loghmarti, R. Stuck, J. C. Muller, D. Sayah, and P. Siffert

Appl. Phys. Lett. 62, 979 (1993); http://dx.doi.org/10.1063/1.108539 (3 pages) | Cited 13 times

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The minority carrier diffusion length in polycrystalline silicon has been strongly improved by using several gettering processes. These processes include different surface treatments followed by conventional thermal annealing (CTA) performed at temperatures between 800 and 950 °C. The n+p structures with a back lapped surface exhibit a maximum increase of the diffusion length from 35 to 140 μm for 45 min annealing duration at temperatures of 900 and 950 °C. The realization of a back surface field (BSF) on the lapped surface by aluminum deposition followed by a CTA cycle at 950 °C, with slow cooling rate (2 °C/min) induces a strong additional gettering, resulting in the increase of the minority carrier diffusion length up to 350%.  
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.20.Fr Low-field transport and mobility; piezoresistance
61.72.uf Ge and Si
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