APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue

27 Dec 1993

Volume 63, Issue 26, pp. 3545-3644

Page 1 of 2 Pages Next Page | Jump to Page

High‐frequency polarization self‐modulation in vertical‐cavity surface‐emitting lasers

Shijun Jiang, Zeqi Pan, M. Dagenais, R. A. Morgan, and K. Kojima

Appl. Phys. Lett. 63, 3545 (1993); http://dx.doi.org/10.1063/1.110092 (3 pages) | Cited 54 times

Full Text: | Download PDF

Show Abstract
Polarization self‐modulation at frequencies up to 6 GHz is observed in a vertical‐cavity surface‐emitting laser. This self‐oscillation is observed when a portion of the laser output power is injected back into the laser after having rotated its polarization by 90° with respect to the initial laser polarization state. Our experiment demonstrates a simple technique for generating an ultrahigh frequency optical clock. New applications in optical storage are also envisioned.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers

High‐speed optical sampling measurement of electrical wave form using a scanning tunneling microscope

Koichiro Takeuchi and Yukio Kasahara

Appl. Phys. Lett. 63, 3548 (1993); http://dx.doi.org/10.1063/1.110763 (2 pages) | Cited 17 times

Full Text: | Download PDF

Show Abstract
The optical sampling measurement of a high‐speed electrical wave form using a scanning tunneling microscope (STM) is demonstrated. An optical pulse train from a laser diode (LD) is used to turn on and off a photoconductive switch on a STM probe to measure a signal from a Schottky barrier diode (SBD) in a sampling procedure. A time resolution less than 300 ps has been achieved. This novel method has the potential to create a breakthrough in ultra‐high‐speed wave form measurement through this unique combination of optical sampling and STM technology.
Show PACS
07.50.-e Electrical and electronic instruments and components
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
84.30.-r Electronic circuits

Fiber laser probe for near‐field scanning optical microscopy

E. Betzig, S. G. Grubb, R. J. Chichester, D. J. DiGiovanni, and J. S. Weiner

Appl. Phys. Lett. 63, 3550 (1993); http://dx.doi.org/10.1063/1.110093 (3 pages) | Cited 12 times

Full Text: | Download PDF

Show Abstract
A hybrid near‐field/fiber laser probe has been developed for high flux, reflection mode optical imaging of surfaces on a subwavelength scale. Spatial resolution of ∼100 nm (i.e., ∼λ/10 at λ=1060 nm) has been achieved simultaneously with signals of ∼1014–1015 photons/s, an improvement of ∼103–104 over earlier designs. The probe thus represents an important step in the development of advanced near‐field transducers for high bandwidth applications such as high density data storage.
Show PACS
07.60.Pb Conventional optical microscopes
42.30.-d Imaging and optical processing
42.81.-i Fiber optics
42.79.Vb Optical storage systems, optical disks

Light‐controlled beam deflector in semiconductor doped glasses

H. Ma and Cid B. de Araújo

Appl. Phys. Lett. 63, 3553 (1993); http://dx.doi.org/10.1063/1.110094 (3 pages) | Cited 7 times

Full Text: | Download PDF

Show Abstract
We report on the operation of an all‐optical beam deflector whereby the deflected signal beam can be more powerful than the driving beam. Therefore, we have transferred the modulation of the driving beam to the signal beam with power gain and angular deflection rate of 10 mrad/kW. The main component of our deflector is a sample of Cd(S,Se) doped glass and its operation is based on the cross‐bending effect.
Show PACS
42.65.-k Nonlinear optics
42.79.Fm Reflectors, beam splitters, and deflectors

Parametric dependence of timing jitter in gain‐switched semiconductor lasers

Petar K. Pepeljugoski, David M. Cutrer, and Kam Y. Lau

Appl. Phys. Lett. 63, 3556 (1993); http://dx.doi.org/10.1063/1.110095 (3 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
In this letter we derive analytic results for the timing jitter in gain‐switched semiconductor lasers driven with electrical pulse shapes commonly used in practice. The analytic results allow us to identify laser parameters as well as electrical bias and pulse conditions which affect timing jitter. These results are in good agreement with experimental observations.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.Mi Dynamical laser instabilities; noisy laser behavior
42.55.Rz Doped-insulator lasers and other solid state lasers

1.5 μm band efficient broadband wavelength conversion by difference frequency generation in a periodically domain‐inverted LiNbO3 channel waveguide

C. Q. Xu, H. Okayama, and M. Kawahara

Appl. Phys. Lett. 63, 3559 (1993); http://dx.doi.org/10.1063/1.110096 (3 pages) | Cited 61 times

Full Text: | Download PDF

Show Abstract
Efficient 1.5 μm band wavelength conversion by difference frequency generation (DFG) in a periodically domain‐inverted LiNbO3 channel waveguide is demonstrated, and DFG efficiency as high as 40% W−1 cm−2 is obtained. Nearly constant wavelength conversion efficiency has been confirmed over a broad wavelength range of 30 nm, which is the largest value ever reported.
Show PACS
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Nv Optical frequency converters
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Ultrafast all‐optical switching in GaAlAs directional couplers at 1.55 μm without multiphoton absorption

K. Al‐hemyari, A. Villeneuve, J. U. Kang, J. S. Aitchison, C. N. Ironside, and G. I. Stegeman

Appl. Phys. Lett. 63, 3562 (1993); http://dx.doi.org/10.1063/1.110097 (3 pages) | Cited 28 times

Full Text: | Download PDF

Show Abstract
We demonstrate ultrafast, high throughput, all‐optical switching in optimized, 2‐cm‐long, half‐ and full‐beat‐length nonlinear directional couplers operated at 1.55 μm, below half the band gap of Ga0.82Al0.18As. The long device length allowed the elimination of nonlinear loss and resulted in a switching peak power and energy of 85 W and 65 pJ, respectively.  
Show PACS
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.79.Gn Optical waveguides and couplers

Intracavity second‐harmonic generation using a deuterated organic ionic crystal

Hisashi Minemoto, Yusuke Ozaki, Nobuo Sonoda, and Takatomo Sasaki

Appl. Phys. Lett. 63, 3565 (1993); http://dx.doi.org/10.1063/1.110098 (3 pages) | Cited 15 times

Full Text: | Download PDF

Show Abstract
A large organic ionic crystal (10×28×15 mm3):4‐nitrophenol sodium(:Na) salt dihydrate (NPNa) crystal, which had good optical, mechanical, and thermal properties, was grown for the second‐harmonic generation (SHG) device. Its effective nonlinear constant was found to be 5.0 pm/V at 1064 nm. The Vickers hardness and thermal conductivity were about two times larger than those of molecular crystals. The SHG device made of DNPNa, in which the water of crystallization of NPNa was deuterated, was used for the intracavity SHG of a diode‐pumped cw Nd:YVO4 laser. High SHG power of 4.4 mW at 532 nm was obtained for the first time with an organic nonlinear material.
Show PACS
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Jk Polymers and organics
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Diode‐laser isotope enrichment of rubidium with a polarized atomic beam

Gang‐hua Mei, Yuan Zhang, Gui‐long Huang, Xi‐wen Zhu, Yong‐fang Tan, and Jin‐ting Liu

Appl. Phys. Lett. 63, 3568 (1993); http://dx.doi.org/10.1063/1.110099 (3 pages)

Full Text: | Download PDF

Show Abstract
Diode‐laser isotope enrichment of rubidium by magnetic deflection of a polarized atomic beam has been experimentally studied with laser‐induced fluorescence detection. The abundance of 85Rb was enhanced from the natural value of 72.8% to 97% and that of 87Rb, from 27.2% to 83%. The results were compared with those with hot‐wire detection.
Show PACS
07.77.-n Atomic, molecular, and charged-particle sources and detectors
32.80.Xx Level crossing and optical pumping
32.10.Bi Atomic masses, mass spectra, abundances, and isotopes

Effect of hydrogen on surface roughening during Si homoepitaxial growth

D. P. Adams, S. M. Yalisove, and D. J. Eaglesham

Appl. Phys. Lett. 63, 3571 (1993); http://dx.doi.org/10.1063/1.110100 (3 pages) | Cited 44 times

Full Text: | Download PDF

Show Abstract
Hydrogen is shown to have a strong influence on the evolution of surface morphology during low temperature (310 °C) Si(100) homoepitaxy. Molecular beam epitaxy growth in the presence of deuterium shows a surface roughness within the epitaxial film that increases rapidly until the Si film exhibits a crystalline to amorphous transition. The rate at which the surface roughens depends critically on the partial pressure of deuterium. Although the kinetics of growth are sensitive to small pressures (4×10−8 Torr) of D, it appears that the breakdown of epitaxy does not result from a ‘‘critical’’ D concentration at the surface. This work suggests that the crystalline to amorphous transition, instead, results from increased roughening during epitaxy.
Show PACS
68.55.-a Thin film structure and morphology

Nonlinear analysis of complexities in striations of Czochralski silicon crystals

Takaya Miyano and Akira Shintani

Appl. Phys. Lett. 63, 3574 (1993); http://dx.doi.org/10.1063/1.110101 (3 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
Complexities in striations of Czochralski silicon crystals are explored on the basis of time‐series analysis by neural networks and by nonlinear regression of a simplex projection method. Two categories of the time series of striations along the crystal growth axis, observed using x‐ray topograph, are forecasted by the simplex projection method and characterized in terms of the dependence of prediction accuracy on embedding dimension and prediction‐time interval. The time series have short‐term predictability, independent of embedding dimension. The back‐propagation network that has learned the dynamics in one time series can make predictions about the other striation. These results suggest that there exist underlying nonlinear dynamics common to both the striations.
Show PACS
81.10.Fq Growth from melts; zone melting and refining
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
05.45.-a Nonlinear dynamics and chaos
05.40.-a Fluctuation phenomena, random processes, noise, and Brownian motion

Molecular tilt direction in a slightly tilted homeotropic aligned liquid crystal cell

Hitoshi Hatoh, Kiyoshi Shohara, Yoshihiro Kinoshita, and Noriko Ookoshi

Appl. Phys. Lett. 63, 3577 (1993); http://dx.doi.org/10.1063/1.110102 (3 pages) | Cited 7 times

Full Text: | Download PDF

Show Abstract
The influence of hardness and topology of substrate surface on the pretilt angle were investigated for a slightly tilted homeotropic alignment achieved by the rubbing technique. On a soft surface, the grooves are produced which align in the same direction as the rubbing direction while the liquid crystal molecules tilt in the direction opposite to the rubbing direction. On a hard surface, no grooves are observed and the molecules tilt in the same direction as the rubbing direction. These results were applied to the fabrication of a two‐domain vertically aligned nematic liquid crystal display.
Show PACS
61.30.-v Liquid crystals
42.79.Kr Display devices, liquid-crystal devices
42.70.Df Liquid crystals

Strain relief mechanism for damage growth during high‐dose, O+ implantation of Si

D. S. Zhou, O. W. Holland, and J. D. Budai

Appl. Phys. Lett. 63, 3580 (1993); http://dx.doi.org/10.1063/1.110103 (3 pages) | Cited 15 times

Full Text: | Download PDF

Show Abstract
Ion‐induced damage accumulation and growth during separation by implantation of oxygen (SIMOX) processing were studied. Silicon wafers were implanted with 450 keV oxygen ions at an elevated temperature with doses of 0.8×1018 and 1.1×1018 cm−2. At the lower dose, the silicon overlayer was found to be highly strained but free of dislocations, while a distinct band of dislocations was observed in the top Si layer at the higher dose. The occurrence of this band is shown to correlate with strain relief in the overlayer. Rutherford backscattering spectrometry, cross‐section transmission electron microscopy, and x‐ray diffraction were used to characterize this damage so that its role in releasing the accumulated strain during ion implantation could be better understood. Additional insight was gained into the nature of the damage formed at the different doses by studying the thermal stability at 900 °C. Markedly different thermal behaviors were observed and are correlated to changes in the strain state of each sample. These results strongly suggest that dislocation formation in the Si overlayer during the SIMOX process is in response to strain accumulation in the lattice and that dislocation‐free layers can be formed by appropriate intervention prior to the yield point. This mechanism for dislocation formation is thought to be generally operative under extreme irradiation conditions and, therefore, will be important to other ion‐beam synthesis processes such as buried silicide formation.
Show PACS
61.80.Jh Ion radiation effects
61.72.Cc Kinetics of defect formation and annealing
61.72.uf Ge and Si

High‐reliability GaAs/AlGaAs multiquantum well lasers grown at a low temperature (375 °C)

Sei‐ichi Miyazawa, Yoshinobu Sekiguchi, and Masahiro Okuda

Appl. Phys. Lett. 63, 3583 (1993); http://dx.doi.org/10.1063/1.110104 (3 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
We report on high‐reliability GaAs/AlGaAs multiquantum well (MQW) lasers grown at a low temperature (375 °C) by molecular beam epitaxy (MBE). Typically, a threshold current (Ith) of 26 mA and a differential quantum efficiency of 62% were obtained during a continuous wave (cw) operation at room temperature. During the life test, a stable operation was observed beyond 5000 h under a 20‐mW cw operation at 70 °C. We also observed an improvement of laser characteristics in low‐temperature‐grown MQW lasers during a cw operation at room temperature. The threshold current of our MQW lasers was reduced from 26 to 18 mA, and this suggests that the point defects in the low‐temperature‐grown MQW laser were decreased.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Very low friction for diamond sliding on diamond in water

Y. Tzeng

Appl. Phys. Lett. 63, 3586 (1993); http://dx.doi.org/10.1063/1.110762 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
This letter reports the lowest coefficient of friction measured for diamond sliding on diamond. When a natural diamond stylus with a spherical tip about 50 μm in diameter slides on a polished polycrystalline chemically vapor deposited diamond film in water at a speed of 0.05 mm/s under a load of 50 g, the coefficient of friction falls to ∼0.001. This clearly shows the effectiveness of water for lubricating diamond sliding on diamond.
Show PACS
68.35.Gy Mechanical properties; surface strains
46.55.+d Tribology and mechanical contacts
81.40.Pq Friction, lubrication, and wear

Photoconductive gain and generation‐recombination noise in multiple‐quantum‐well infrared detectors

W. A. Beck

Appl. Phys. Lett. 63, 3589 (1993); http://dx.doi.org/10.1063/1.110105 (3 pages) | Cited 56 times

Full Text: | Download PDF

Show Abstract
The photoconductive gain, g, and generation‐recombination (GR) noise of multiple‐quantum‐well infrared detectors are calculated for structures in which the well capture probability, pc, and the fraction of current derived from tunneling are allowed to vary through the structure. For uniform pc and no tunneling current, g=1/(Npc), where N is the number of wells. The GR noise power under the same conditions is 4eĪgB(1−pc/2), where e is electronic charge, math is the mean current, and B is the measurement bandwidth. When pc≪1, the noise contributions from carrier generation and decay (recombination) are equal as in a homogeneous photoconductor. However, when pc→1, the recombination noise decreases to zero, and the noise is equal to the shot noise of N series‐connected, independent junctions.
Show PACS
85.60.Gz Photodetectors (including infrared and CCD detectors)
72.40.+w Photoconduction and photovoltaic effects
73.40.Gk Tunneling

Ferroelectric La‐Sr‐Co‐O/Pb‐Zr‐Ti‐O/La‐Sr‐Co‐O heterostructures on silicon via template growth

R. Ramesh, H. Gilchrist, T. Sands, V. G. Keramidas, R. Haakenaasen, and D. K. Fork

Appl. Phys. Lett. 63, 3592 (1993); http://dx.doi.org/10.1063/1.110106 (3 pages) | Cited 206 times

Full Text: | Download PDF

Show Abstract
Ferroelectric Pb0.9La0.1Zr0.2Ti0.8O3 thin film capacitors with a symmetrical La‐Sr‐Co‐O top and bottom electrodes have been grown on [001] Si with yttria stabilized zirconia (YSZ) buffer layer. A layered perovskite ‘‘template’’ layer (200–300 Å thick), grown between the YSZ buffer layer and the bottom La‐Sr‐Co‐O electrode, is critical for obtaining the required orientation of the subsequent layers. When compared to the capacitors grown with the Y‐Ba‐Cu‐O top and bottom electrodes, these structures possess two advantages: (i) the growth temperatures are lower by 60–150 °C; (ii) the capacitors show a larger remnant polarization ΔP (ΔP=switched polarization–nonswitched polarization), 25–30 μC/cm2, for an applied voltage of only 2 V (applied field of 70 kV/cm). The fatigue, retention, and aging characteristics of these new structures are excellent.
Show PACS
68.55.-a Thin film structure and morphology
84.32.Tt Capacitors
85.30.Tv Field effect devices

Three‐terminal conductance modulation of a quantum interference device using a quantum wire with a stub structure

K. Aihara, M. Yamamoto, and T. Mizutani

Appl. Phys. Lett. 63, 3595 (1993); http://dx.doi.org/10.1063/1.110107 (3 pages) | Cited 8 times

Full Text: | Download PDF

Show Abstract
We report the fabrication of a three‐terminal quantum interference device using a quantum wire with a novel stub structure. The device achieves clear conductance modulation as a function of stub‐tuner gate voltage, which controls the stub length independently of the Fermi energy. The observed conductance oscillations can be consistently explained by the quantum interference of electron waves in the stub.
Show PACS
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.Tv Field effect devices

Intensity dependent absorption/transparency of a reducing BaTiO3

J. Y. Chang, M. H. Garrett, H. P. Jenssen, and C. Warde

Appl. Phys. Lett. 63, 3598 (1993); http://dx.doi.org/10.1063/1.110108 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
We report intensity dependent absorption and transparency as a function of wavelength for barium titanate. The BaTiO3 crystal examined has an as‐grown, light‐blue color due to an absorption centered at 690 nm, and when reduced in a partial pressure of 10−15 atm of oxygen it has a yellow‐orange color due to an absorption centered at 470 nm. Both energy levels are active in the reduced sample as revealed in the spectrum of the intensity dependent changes in absorption.
Show PACS
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
71.55.Ht Other nonmetals
78.30.Hv Other nonmetallic inorganics
78.40.Ha Other nonmetallic inorganics
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Model for reflection high‐energy electron diffraction intensity recovery during GaP growth in laser‐triggered chemical beam epitaxy

Pablo Vaccaro, Tadao Hashimoto, Masahiro Yoshimoto, and Hiroyuki Matsunami

Appl. Phys. Lett. 63, 3601 (1993); http://dx.doi.org/10.1063/1.110088 (3 pages)

Full Text: | Download PDF

Show Abstract
Reflection high‐energy electron diffraction (RHEED) intensity has been observed while growing GaP by laser‐triggered chemical beam epitaxy simultaneously using a supply of triethylgallium (TEGa) and phosphine (PH3). The intensity decreases after each laser pulse, and then it recovers the original value. We present a semiquantitative model in order to explain the RHEED intensity changes. We assume that initially a GaP surface is saturated with chemisorbed diethylgallium (DEGa) and physisorbed TEGa. Laser irradiation decomposes a fraction of chemisorbed DEGa, and it reacts slowly with impinging P. TEGa is quickly chemisorbed on the just‐reacted GaP and the initial condition is recovered. This model properly fits the experimental data and it allows a deeper understanding of chemical reactions on the surface during chemical beam epitaxial growth of GaP.
Show PACS
68.55.-a Thin film structure and morphology
82.50.Bc Processes caused by infrared radiation
82.50.Hp Processes caused by visible and UV light
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)

High efficiency thin film silicon solar cells prepared by zone‐melting recrystallization

T. Ishihara, S. Arimoto, H. Morikawa, H. Kumabe, T. Murotani, and S. Mitsui

Appl. Phys. Lett. 63, 3604 (1993); http://dx.doi.org/10.1063/1.110062 (3 pages) | Cited 10 times

Full Text: | Download PDF

Show Abstract
A new type of silicon solar cell is demonstrated using chemical vapor deposited silicon thin films on a silicon dioxide layer. In order to improve the crystal quality of the thin films, zone‐melting recrystallization (ZMR) is applied and grain boundaries of polycrystalline Si films are passivated with H+. It is found that H+ passivation is quite effective for thin film Si solar cells and ZMR conditions to provide dominant (100) orientation is essential for achieving higher conversion efficiency. This (100) nature is also favorable for making effective light confinement scheme with pyramidal textured surface using anisotropic chemical etching. The conversion efficiency as high as 14.2% for a practical size of 10×10 cm2 is achieved. This is the highest for large area thin film polycrystalline Si solar cells so far.
Show PACS
84.60.Jt Photoelectric conversion
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.10.Fq Growth from melts; zone melting and refining

Epitaxy of high resistivity InP on Si

R. F. Schnabel, A. Krost, M. Grundmann, F. Heinrichsdorff, D. Bimberg, M. Pilatzek, and P. Harde

Appl. Phys. Lett. 63, 3607 (1993); http://dx.doi.org/10.1063/1.110063 (3 pages) | Cited 2 times

Full Text: | Download PDF

Show Abstract
Low pressure metalorganic chemical vapor deposition of undoped and Fe‐doped InP on vicinal Si(001) and Si(111) is reported. For concentrations up to 8×1016 cm−3 the incorporated Fe is found to be entirely electrically active. Semi‐insulating InP on Si(111) with a resistivity of 3×107 Ω cm has been obtained. The resistivity increases strongly with decreasing defect density in the InP:Fe epitaxial layers. A reduction of the crystal defect density by one order of magnitude in InP/Si(111) as compared to InP/Si(001) almost suppresses the undesired effects of strong Si incorporation and parasitic conductance channels.
Show PACS
68.55.-a Thin film structure and morphology

Surface recombination velocities on processed InGaP p‐n junctions

S. J. Pearton, F. Ren, W. S. Hobson, C. R. Abernathy, R. L. Masaitis, and U. K. Chakrabarti

Appl. Phys. Lett. 63, 3610 (1993); http://dx.doi.org/10.1063/1.110064 (3 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
InGaP p‐n junction mesa diodes were fabricated by wet or dry etching, and the surface recombination velocities (Sv) measured from the size dependence of the current density‐voltage characteristics. Within experimental error, the dry etching does not increase the S values, which are in the range 4.4–5.2×104 cm s−1. Subsequent low temperature annealing or plasma exposure did not degrade the surface properties of the mesa diodes, and some improvement was observed with (NH4)2Sx treatment. While the InGaP diodes are relatively insensitive to typical processing steps, comparable AlGaAs p‐n junction show much larger changes in surface recombination velocities.  
Show PACS
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.20.At Surface states, band structure, electron density of states
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.65.-b Surface treatments

High current density carbon‐doped strained‐layer GaAs (p+)‐InGaAs(n+)‐GaAs(n+) p‐n tunnel diodes

T. A. Richard, E. I. Chen, A. R. Sugg, G. E. Höfler, and N. Holonyak

Appl. Phys. Lett. 63, 3613 (1993); http://dx.doi.org/10.1063/1.110065 (3 pages) | Cited 7 times

Full Text: | Download PDF

Show Abstract
Data are presented showing that a GaAs p‐n tunnel diode can be modified, and improved, with the introduction of an InxGa1−xAs layer (Lz∼100 Å) in the barrier region to reduce the energy gap (and carrier mass) and increase the tunneling probability without sacrificing the high injection barrier and voltage of GaAs. Peak tunnel current densities in the range (1–1.5)×103 A/cm2 are obtained, with peak‐to‐valley current ratios of ∼20:1 and voltage ‘‘swings’’ from peak tunnel current to equal injection current of ≳1 V (≤1 V for GaAs). The C‐doped GaAs(p+)‐InGaAs(n+)‐GaAs(n+) diodes are grown by metalorganic chemical vapor deposition and are compared to GaAs tunnel diodes fabricated by the usual alloy process (i.e., local liquid phase epitaxy).
Show PACS
73.40.Gk Tunneling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Comparison of electroabsorption in tensile‐strained and lattice‐matched GaAs(P)/AlGaAs quantum wells

Badri N. Gomatam, Neal G. Anderson, Farid Agahi, Charles F. Musante, and Kei May Lau

Appl. Phys. Lett. 63, 3616 (1993); http://dx.doi.org/10.1063/1.110066 (3 pages) | Cited 2 times

Full Text: | Download PDF

Show Abstract
The performance of tensile‐strained GaAsP/AlGaAs multiple‐quantum well (MQW) reflection modulators is compared to that of similar lattice‐matched GaAs/AlGaAs devices operating in the same wavelength range. The tensile‐strained modulators utilize ∼95 Å GaAs0.92P0.08 quantum wells, which are designed to make use of the field‐induced merging of electron‐to‐light‐hole (e‐lh) and electron‐to‐heavy‐hole (e‐hh) excitonic absorption edges achievable in tensile strained wells. Unstrained ∼46 Å GaAs quantum wells yielding similar excitonic gaps are utilized in the lattice‐matched devices, but the strained and unstrained modulators are otherwise virtually identical. Room‐temperature differential reflection spectra reveal increased modulation depths at low drive voltages in the tensile‐strained devices, consistent with electroabsorption enhancements expected in these structures from merging of the elh and ehh transitions.
Show PACS
78.66.Fd III-V semiconductors
42.79.Hp Optical processors, correlators, and modulators
78.20.Jq Electro-optical effects
Page 1 of 2 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Your Recent History Recent History Help

Recently Viewed

  1. Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells
  2. Effects of superradiant modes on the performance of free‐electron laser amplifiers
  3. Whispering‐gallery mode microdisk lasers
  4. Observation of phase conjugation at 10.6 μm via intersubband third‐order nonlinearities in a GaAs/AlGaAs multi‐quantum‐well structure
  5. Optical Bloch waves in a semiconductor photonic lattice
Go to AIP Home
Copyright © American Institute of Physics
close