APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Next Issue

5 Jul 1993

Volume 63, Issue 1, pp. 1-121

Page 1 of 2 Pages Next Page | Jump to Page

Low resistivity indium tin oxide films by pulsed laser deposition

J. P. Zheng and H. S. Kwok

Appl. Phys. Lett. 63, 1 (1993); http://dx.doi.org/10.1063/1.109736 (3 pages) | Cited 67 times

Full Text: | Download PDF

Show Abstract
Indium tin oxide films were grown by pulsed laser deposition on glass substrates. The electrical and optical properties of these films were studied. At optimized oxygen pressures, films with resistivity values of 1.4×10−4 and 5.6×10−4 Ω cm were deposited at substrate temperatures of 310 and 20 °C, respectively. Films with a thickness of 180 nm had a transmission of nearly 100% for the wavelength range of 600–800 nm.
Show PACS
81.15.Fg Pulsed laser ablation deposition
73.61.-r Electrical properties of specific thin films
78.66.-w Optical properties of specific thin films

All‐solid‐state subpicosecond passively mode locked erbium‐doped fiber laser

W. H. Loh, D. Atkinson, P. R. Morkel, M. Hopkinson, A. Rivers, A. J. Seeds, and D. N. Payne

Appl. Phys. Lett. 63, 4 (1993); http://dx.doi.org/10.1063/1.109747 (3 pages) | Cited 10 times

Full Text: | Download PDF

Show Abstract
Using a semiconductor saturable absorber, an erbium‐doped fiber laser has been passively mode locked to yield pulses of 840 fs with pulse energies of 0.85 nJ. Stable mode locking at the fundamental roundtrip frequency and also at the second and third harmonic has been achieved.
Show PACS
42.55.Wd Fiber lasers
42.60.Fc Modulation, tuning, and mode locking

Low threshold quasi‐three‐level 946 nm laser operation of an epitaxially grown Nd:Y3Al5O12 waveguide

D. C. Hanna, A. C. Large, D. P. Shepherd, A. C. Tropper, I. Chartier, B. Ferrand, and D. Pelenc

Appl. Phys. Lett. 63, 7 (1993); http://dx.doi.org/10.1063/1.109703 (3 pages) | Cited 23 times

Full Text: | Download PDF

Show Abstract
We report the 946 nm laser operation of an epitaxially grown Nd:YAG planar waveguide. The incident and absorbed power thresholds of 4 and 1.2 mW, respectively, are lower than those reported for bulk lasers when using a similar experimental setup. We also report the use of Ga doping of the active layer to increase the refractive index difference to allow the production of very small guiding layers.
Show PACS
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.-v Laser optical systems: design and operation

Ion‐beam sputtering deposition of fluoropolymer thin films

F. Quaranta, A. Valentini, P. Favia, R. Lamendola, and R. d’Agostino

Appl. Phys. Lett. 63, 10 (1993); http://dx.doi.org/10.1063/1.109729 (2 pages) | Cited 37 times

Full Text: | Download PDF

Show Abstract
It is shown that it is possible to deposit thin films with various CFx composition (1.26≤x≤1.83) by ion‐beam sputtering. These materials with ‘‘teflon‐like’’ composition have been deposited at room temperature by Ar ion‐beam sputtering of a teflon target; the film chemical composition has been determined by electron spectroscopy for chemical analysis. The fluorine‐to‐carbon ratio of the films, as well as their crosslinking degree, is shown to depend on the energy of the ions impinging on the target.  
Show PACS
81.15.Cd Deposition by sputtering
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

High‐speed photoresponse in a reverse biased InGaAs/InP laser structure at 1.54 μm: Experiment and modeling

S. Charbonneau, G. C. Aers, K. A. McGreer, M. Davies, D. Landheer, Z.‐M. Li, A. Delâge, M. Dion, B. Takasaki, D. Conn, and D. Moss

Appl. Phys. Lett. 63, 12 (1993); http://dx.doi.org/10.1063/1.109733 (3 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
We report extremely efficient (∼100% internal quantum efficiency) and high‐speed (∼120 ps lifetime) photodetection in a reversed biased InGaAs/InP ridge‐waveguide multiple quantum well p‐i‐n laser structure operating at 1.54 μm. The impulse response of this monolithically integratable detector is analyzed in terms of the escape of photogenerated carriers from the InGaAsP quantum well barrier to the InP cladding contact layer.
Show PACS
85.60.Gz Photodetectors (including infrared and CCD detectors)
78.66.Fd III-V semiconductors
73.40.Gk Tunneling

New Pb‐free solder alloy with superior mechanical properties

M. McCormack, S. Jin, G. W. Kammlott, and H. S. Chen

Appl. Phys. Lett. 63, 15 (1993); http://dx.doi.org/10.1063/1.109734 (3 pages) | Cited 91 times

Full Text: | Download PDF

Show Abstract
New high‐strength Pb‐free solder alloys, based on the Sn‐Ag‐Zn system, have been developed. A relatively small addition of Zn significantly improves the mechanical strength of Sn‐3.5% Ag eutectic solders while maintaining the same level of ductility. The observed increase in strength is as much as 48% over that of the Zn‐free alloy. This strengthening from the Zn additions is attributed to a substantial refinement of the precipitates in the solidification microstructure. The problems of nonuniformity in solidification dendrite structure and solder surface roughness often observed in the Sn‐Ag binary alloys are also alleviated by the Zn addition. It is found that essentially all of the added Zn resides in the more corrosion‐resistant, Ag‐based, intermetallic precipitates, leaving the Sn‐rich matrix primarily free of Zn in solid solution. High‐temperature creep tests indicate that the new Zn‐containing alloys exhibit a remarkably improved creep resistance of more than an order of magnitude.
Show PACS
62.20.F- Deformation and plasticity
81.30.Mh Solid-phase precipitation
81.30.Fb Solidification
81.40.Lm Deformation, plasticity, and creep

Deposition of thin films of TiO2 from Langmuir–Blodgett film precursors

D. V. Paranjape, Murali Sastry, and P. Ganguly

Appl. Phys. Lett. 63, 18 (1993); http://dx.doi.org/10.1063/1.109735 (3 pages) | Cited 20 times

Full Text: | Download PDF

Show Abstract
Excellent quality thin TiO2 films have been obtained by the thermal decomposition of n‐octadecyl amine‐titanyl oxalate complex multilayer Langmuir–Blodgett films. The films were characterized by x‐ray diffraction and x‐ray photoemission studies. X‐ray diffraction studies suggest a preferred orientation of the TiO2 films.
Show PACS
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
68.18.-g Langmuir-Blodgett films on liquids

Pressure dependence of the electro‐optic response function in partially exposed polymer dispersed ferroelectric liquid crystals

D. S. Parmar and H. K. Holmes

Appl. Phys. Lett. 63, 21 (1993); http://dx.doi.org/10.1063/1.109737 (3 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
Ferroelectric liquid crystals in a new configuration, termed partially exposed polymer dispersed ferroelectric liquid crystal (PEPDFLC), respond to external pressures and demonstrate pressure‐induced electro‐optic switching response. When the PEPDFLC thin film is sandwiched between two transparent conducting electrodes, one a glass plate and the other a flexible sheet such as polyvenylidene fluoride, the switching characteristics of the thin film are a function of the pressure applied to the flexible transparent electrode and the bias voltage across the electrodes. Response time measurements reveal a linear dependence of the change in electric field with external pressure.
Show PACS
61.30.-v Liquid crystals
42.70.Df Liquid crystals

Electrical characteristics of a stacked nitride/microcrystalline‐silicon/oxide/silicon structure

Shye Lin Wu, Chung Len Lee, and Tan Fu Lei

Appl. Phys. Lett. 63, 24 (1993); http://dx.doi.org/10.1063/1.109738 (3 pages) | Cited 8 times

Full Text: | Download PDF

Show Abstract
This letter reports a stacked nitride/microcrystalline‐silicon/oxide/silicon structure, which exhibits a higher electron injection efficiency, a less electron trapping rate, and a larger charge to breakdown than the normal oxide. Besides, the room‐temperature resonant tunneling effect is also observed for this structure.
Show PACS
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.40.Gk Tunneling
84.32.Tt Capacitors

Effects of crystalline quality and electrode material on fatigue in Pb(Zr,Ti)O3 thin film capacitors

J. Lee, L. Johnson, A. Safari, R. Ramesh, T. Sands, H. Gilchrist, and V. G. Keramidas

Appl. Phys. Lett. 63, 27 (1993); http://dx.doi.org/10.1063/1.109739 (3 pages) | Cited 72 times

Full Text: | Download PDF

Show Abstract
Pb(Zr0.52Ti0.48)O3(PZT)/Y1Ba2Cu3Ox(YBCO) heterostructures have been grown by pulsed laser deposition, in which PZT films were epitaxial, highly oriented, or polycrystalline. These PZT films were obtained by varying the deposition temperature from 550 to 760 °C or by using various substrates such as SrTiO3(100), MgO(100), and r‐plane sapphire. PZT films with Pt top electrodes exhibited large fatigue with 35%–50% loss of the remanent polarization after 109 cycles, depending on the crystalline quality. Polycrystalline films showed better fatigue resistance than epitaxial or highly oriented films. However, PZT films with both top and bottom YBCO electrodes had significantly improved fatigue resistance for both epitaxial and polycrystalline films. Electrode material seems to be a more important parameter in fatigue than the crystalline quality of the PZT films.
Show PACS
77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity
81.15.Fg Pulsed laser ablation deposition
84.32.Tt Capacitors

Preparation of Pb(Zr0.54Ti0.46)O3 thin films on (100)Si using textured YBa2Cu3O7−δ and yttria‐stabilized zirconia buffer layers by laser physical vapor deposition technique

P. Tiwari, T. Zheleva, and J. Narayan

Appl. Phys. Lett. 63, 30 (1993); http://dx.doi.org/10.1063/1.109740 (3 pages) | Cited 20 times

Full Text: | Download PDF

Show Abstract
We have fabricated high‐quality 〈00l〉 textured Pb(Zr0.54Ti0.46)O3 (PZT) thin films on (001)Si by interposing 〈00l〉 textured YBa2Cu3O7−δ (YBCO) and yttria‐stabilized zirconia (YSZ) buffer layers using pulsed laser deposition (KrF excimer laser, λ=248 nm, τ=20 ns). The YBCO layer provides a seed for PZT growth and can also act as an electrode for the PZT films, whereas YSZ provides a diffusion barrier as well as a seed for the growth of YBCO films on (001)Si. These heterostructures were characterized using x‐ray diffraction, high‐resolution transmission electron microscopy, and Rutherford backscattering techniques. The YSZ films were deposited in oxygen ambient (∼9×10−4 Torr) at 775 °C on (001)Si substrate having 〈001〉 YSZ//〈001〉Si texture. The YBCO thin films were deposited in situ in oxygen ambient (200 mTorr) at 650 °C. Temperature and oxygen ambient for the PZT deposition were optimized to be 530 °C and 0.4–0.6 Torr, respectively. The laser fluence to deposit this multistructure was 2.5–5 J/cm2. The 〈00l〉 textured perovskite PZT films showed a dielectric constant of 800–1000, a saturation polarization of 37.81 μC/cm2, remnant polarization of 24.38 μC/cm2, and a coercive field of 125 kV/cm. The effects of processing parameters on microstructure and ferroelectric properties of PZT films and device implications of these structures are discussed.
Show PACS
81.15.Fg Pulsed laser ablation deposition
77.55.-g Dielectric thin films
74.78.Fk Multilayers, superlattices, heterostructures

Field‐emitter array performance enhancement using hydrogen glow discharges

P. R. Schwoebel and C. A. Spindt

Appl. Phys. Lett. 63, 33 (1993); http://dx.doi.org/10.1063/1.109741 (3 pages) | Cited 22 times

Full Text: | Download PDF

Show Abstract
The changes in the current‐voltage characteristics and electron emission spatial distribution of microfabricated field emitters following exposure to hydrogen low‐pressure glow discharges have been investigated. The hydrogen discharge was found to result in a work function decrease typically between 0.5 and 1.5 eV following a dose of 1018–1019 ions/cm2. The net result is a reduction in the operating voltage and an improvement in the spatial uniformity of the electron emission.
Show PACS
79.70.+q Field emission, ionization, evaporation, and desorption
73.30.+y Surface double layers, Schottky barriers, and work functions
81.65.-b Surface treatments

Average energy deposited per atom: A universal parameter for describing ion‐assisted film growth?

I. Petrov, F. Adibi, J. E. Greene, L. Hultman, and J.‐E. Sundgren

Appl. Phys. Lett. 63, 36 (1993); http://dx.doi.org/10.1063/1.109742 (3 pages) | Cited 78 times

Full Text: | Download PDF

Show Abstract
The average energy deposited per atom, 〈Ed〉=Ei(Ji/JMe), where Ei is the ion energy and Ji/JMe is the ratio of the accelerated‐ion to deposited‐thermal‐particle fluxes incident at the growing film, has been shown to be one of a set of parameters useful for describing the effects of low‐energy ion irradiation on film microstructure during ion‐assisted deposition. Recently, however, 〈Ed〉 has often been treated as if it were a fundamental, or universal, parameter. We have carried out experiments in which Ei (20–100 eV) and Ji/JMe (1–10) were varied independently during the deposition, at constant temperature, of polycrystalline Ti0.5Al0.5N films onto amorphous SiO2 substrates by ultrahigh vacuum reactive magnetron sputtering in pure nitrogen. Ion‐irradiation‐induced changes in film microstructure, texture, phase composition, and nitrogen‐to‐metal ratio were found to follow distinctly different mechanistic pathways depending upon whether Ei or Ji/JMe was varied, resulting in quite different properties for the same value of 〈Ed〉. Thus, 〈Ed〉 is clearly not a universal parameter.
Show PACS
81.15.Cd Deposition by sputtering
68.55.-a Thin film structure and morphology

Surface treatment of a–axis EuBa2Cu3O7−y thin films by an electron cyclotron resonance ion beam

H. Asano, M. Asahi, and Y. Kimachi

Appl. Phys. Lett. 63, 39 (1993); http://dx.doi.org/10.1063/1.109743 (3 pages) | Cited 2 times

Full Text: | Download PDF

Show Abstract
An electron cyclotron resonance (ECR) ion beam has been utilized for a developing surface cleaning process of high‐Tc superconducting thin films. By means of silver‐contact resistivity measurements, and ex situ surface analysis using x‐ray photoelectron spectroscopy (XPS) and reflection high‐energy electron diffraction (RHEED), the effects of ECR treatment on an air‐exposed surface of a‐axis EuBa2Cu3O7−y (EBCO) films are examined. Ag/EBCO contacts are made with exposure of the EBCO surface to an ECR oxygen ion beam with ion current densities of 100 μA/cm2 at room temperature for about 30 min and the in situ deposition of silver. The contacts, which are not annealed in oxygen, exhibit low contact resistivity in the 10−8–10−7 Ω cm2 range. These values are about five orders of magnitude lower than those of samples fabricated without ECR treatment. Based on XPS and RHEED data, change in the EBCO surface caused by ECR treatment is surmised.
Show PACS
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments
73.40.Cg Contact resistance, contact potential
74.45.+c Proximity effects; Andreev reflection; SN and SNS junctions
74.72.-h Cuprate superconductors

Fractal growth of silver nanoclusters in a polymer medium

M. Mukherjee, S. K. Saha, and D. Chakravorty

Appl. Phys. Lett. 63, 42 (1993); http://dx.doi.org/10.1063/1.109744 (3 pages) | Cited 9 times

Full Text: | Download PDF

Show Abstract
Fractal growth of metallic silver within a polymer matrix has been induced by chemical reduction of a suitable sol. A fractal dimension of 1.73±0.01 over a length scale 100–10 000 nm has been estimated. The fractal structure consists of an aggregation of nanosized silver particles having diameters of the order of 15 nm. Electrical conductivity of these nanoparticles shows a lowering of the effective Debye temperature as the particle size is reduced.
Show PACS
61.43.Hv Fractals; macroscopic aggregates (including diffusion-limited aggregates)
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation

Energy bands in quantum confined silicon light‐emitting diodes

H. Paul Maruska, Fereydoon Namavar, and Nader M. Kalkhoran

Appl. Phys. Lett. 63, 45 (1993); http://dx.doi.org/10.1063/1.109745 (3 pages) | Cited 22 times

Full Text: | Download PDF

Show Abstract
Measurements of the temperature dependence of the current‐voltage characteristics of heterojunction light‐emitting diodes fabricated by depositing indium tin oxide onto the surface of electrochemically etched p‐type silicon (porous silicon) are presented, and the results are compared with those for adjacent devices formed on nonprocessed bulk silicon. The barrier height for the diodes which exhibit quantum confinement effects was determined to be 0.42 eV. Unlike the bulk silicon devices, the diodes prepared on porous silicon did not manifest a photovoltaic effect. These observations allow us to present a potential energy diagram for porous silicon heterojunction diodes which indicates barriers in both the conduction band and the valence band.
Show PACS
85.60.Jb Light-emitting devices
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.20.At Surface states, band structure, electron density of states

A comparison of minority electron transport in In0.53Ga0.47As and GaAs

T. Kaneto, K. W. Kim, and M. A. Littlejohn

Appl. Phys. Lett. 63, 48 (1993); http://dx.doi.org/10.1063/1.109746 (3 pages) | Cited 17 times

Full Text: | Download PDF

Show Abstract
The electron transport properties of heavily doped p‐type In0.53Ga0.47As and GaAs have been investigated and the applications in heterojunction bipolar transistors (HBTs) are emphasized. Using the dielectric function formalism, we have characterized minority electron transport in terms of mean‐free path and diffusivity. These parameters quantify the nonequilibrium (ballistic) and near‐equilibrium (diffusive) transport in the p‐type base region of HBTs. Our calculations demonstrate that electron energies above 300 meV provide no benefit for ballistic transport in p‐type InGaAs in terms of momentum relaxation mean‐free path. Especially for very heavily doped cases (∼1020 cm−3), low‐energy electron injection into the p‐type InGaAs base is more advantageous for base transport, as well as the succeeding transport in the base‐collector depletion region. When diffusive transport is dominant, p‐type InGaAs exhibits superior performance over GaAs for a wide range of doping concentrations.
Show PACS
72.20.Dp General theory, scattering mechanisms
72.80.Ey III-V and II-VI semiconductors
85.30.Pq Bipolar transistors

Sub‐μm wide channels with surface potential compensated by focused Si ion beam implantation

Toshimasa Fujisawa, Tadashi Saku, Yoshiro Hirayama, and Seigo Tarucha

Appl. Phys. Lett. 63, 51 (1993); http://dx.doi.org/10.1063/1.109748 (3 pages) | Cited 2 times

Full Text: | Download PDF

Show Abstract
We propose and demonstrate a novel technique using focused Si ion beam implantation to produce high‐quality mesoscopic channels. Low‐energy Si implantation compensates the surface potential of a modulation‐doped heterostructure that is designed to have no conductive channels at the heterointerface. The implantation forms a conductive channel separated from the damaged implanted region. The mobility of the channel is improved by decreasing the ion energy from 100 to 35 keV. Sub‐μm to 5 μm wide channels fabricated by 35 keV Si+ ions show a mobility of 5.3×105 cm2/V s and a ballistic length of 3.1 μm at 1.5 K.
Show PACS
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
61.72.uj III-V and II-VI semiconductors
73.50.Dn Low-field transport and mobility; piezoresistance

Role of interfacial nitrogen in improving thin silicon oxides grown in N2O

E. C. Carr and R. A. Buhrman

Appl. Phys. Lett. 63, 54 (1993); http://dx.doi.org/10.1063/1.109749 (3 pages) | Cited 113 times

Full Text: | Download PDF

Show Abstract
We have used chemical depth profiling, with a depth resolution of 10 Å, in conjunction with x‐ray photoelectron spectroscopy to study the composition and chemical bonding in thin silicon oxides grown in N2O with both a conventional furnace and a rapid thermal annealer (RTA) process. The nitrogen profiles of RTA and furnace oxides differ, with the RTA oxides showing an increase in nitrogen concentration at the interface and the furnace oxides showing a more uniform nitrogen distribution. The percentage of nitrogen at the interface also differs, and correlates with a reduction in interface state generation under current injection for increased nitrogen concentration. The chemical environment for the nitrogen changes with distance from the interface, and this is attributed to an increasing number of nitrogen—silicon bonds near the interface.
Show PACS
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.65.-b Surface treatments
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Ng Insulators

Experimental and theoretical evidence for As—H bond cleavage in the decomposition of primary arylarsines

Douglas F. Foster, Christopher Glidewell, and David J. Cole‐Hamilton

Appl. Phys. Lett. 63, 57 (1993); http://dx.doi.org/10.1063/1.109750 (3 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
Decomposition of 2‐CH3C6H4AsD2 in vacuo at 600–1000 °C gives toluene, which is deuterated with 0, 1, 2, or 3 D atoms in the methyl group. Theoretical studies suggest that this distribution of D atoms can only occur if the primary process for decomposition of the primary arsine is As—D bond cleavage and if this is followed by reductive elimination to give As and toluene or by rearrangement of CH3C6H4AsD⋅ to DHAsC6H4CH2⋅, which then abstracts D from another 2‐CH3C6H4AsD2 molecule.
Show PACS
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)

Laser surface photovoltage spectroscopy: A new tool for the determination of surface state distributions

L. Kronik, L. Burstein, Yoram Shapira, and M. Oron

Appl. Phys. Lett. 63, 60 (1993); http://dx.doi.org/10.1063/1.109751 (3 pages) | Cited 16 times

Full Text: | Download PDF

Show Abstract
A new experimental technique, which utilizes a tunable laser as the illumination source for surface photovoltage spectroscopy measurements, is presented. The data obtained by this technique make it possible to determine the distribution function of gap states observed at semiconductor interfaces. An outline of the approach together with experimental results obtained using a Ti:sapphire laser on InAlAs and CdTe crystals is given.
Show PACS
73.20.At Surface states, band structure, electron density of states
73.30.+y Surface double layers, Schottky barriers, and work functions
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Microscopic‐scale lateral inhomogeneities of the photoemission response of cleaved GaAs

F. Cerrina, A. K. Ray‐Chaudhuri, W. Ng, S. Liang, S. Singh, J. T. Welnak, J. P. Wallace, C. Capasso, J. H. Underwood, J. B. Kortright, R. C. C. Perera, and G. Margaritondo

Appl. Phys. Lett. 63, 63 (1993); http://dx.doi.org/10.1063/1.109698 (3 pages) | Cited 11 times

Full Text: | Download PDF

Show Abstract
Photoelectron energy distribution spectra taken for the first time on micrometer‐sized areas of cleaved GaAs(110) reveal rigid shifts from location to location in the photoemission core level peak energies, indicating band‐bending changes on a microscopic scale.
Show PACS
79.60.Bm Clean metal, semiconductor, and insulator surfaces
73.20.At Surface states, band structure, electron density of states

Improvement of the growth of InxGa1−xAs on GaAs (001) using Te as surfactant

N. Grandjean, J. Massies, C. Delamarre, L. P. Wang, A. Dubon, and J. Y. Laval

Appl. Phys. Lett. 63, 66 (1993); http://dx.doi.org/10.1063/1.110770 (3 pages) | Cited 16 times

Full Text: | Download PDF

Show Abstract
It is demonstrated by using reflection high‐energy electron diffraction and transmission electron microscopy that the epitaxial growth of highly strained InxGa1−xAs (x≳0.3) layers on GaAs(001) is improved by a preadsorbed Te surfactant layer. The formation of 3D islands is inhibited by the surfactant action and consequently the onset of plastic relaxation (i.e., the critical thickness) is significantly delayed.
Show PACS
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)

Morphology of molecular beam epitaxy grown NiAl on GaAs studied by scanning tunneling microscopy

S. Hirono, M. Tanimoto, T. Takigami, J. Osaka, and N. Inoue

Appl. Phys. Lett. 63, 69 (1993); http://dx.doi.org/10.1063/1.109699 (3 pages)

Full Text: | Download PDF

Show Abstract
Extended terraces, steps along the 〈110〉 directions, and trenches between the terraces were observed on 100 nm thick NiAl films grown on GaAs by molecular beam epitaxy at 600 °C. Atomically smooth surfaces as large as 100 nm across could be obtained at this growth temperature, but at 450 °C, mounds rather than terraces were formed. We propose models for the formation of these features.
Show PACS
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy

Step ordering during fractional‐layer superlattice growth on GaAs(001) vicinal surfaces by metalorganic chemical vapor deposition

H. Saito, K. Uwai, Y. Tokura, and T. Fukui

Appl. Phys. Lett. 63, 72 (1993); http://dx.doi.org/10.1063/1.109700 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
Step ordering during fractional‐layer superlattice (FLS) growth is observed by trans‐ mission electron microscopy. A cross‐sectional transmission electron micrograph of an (AlAs)1/2(GaAs)1/2FLS shows that the steps of unequal spacings observed on a GaAs surface develop a sequence of uniformly spaced steps of single monolayer height during the growth. Comparison of the observed FLS structure with a numerical simulation based on the assumption of unequal incorporation probabilities of adatoms into up steps and down steps shows that a net flux into the up steps 2%–4% larger than that into the down steps is enough to reproduce the FLS growth. It is demonstrated that the FLS growth provides a unique opportunity to observe the step ordering process directly and determine the anisotropy of diffusion quantitatively.
Show PACS
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
68.55.-a Thin film structure and morphology
Page 1 of 2 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close