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6 Sep 1993

Volume 63, Issue 10, pp. 1301-1445

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Type‐II second‐harmonic generation and sum‐frequency mixing in uniform KTiOPO4 channel waveguides

W. P. Risk, S. D. Lau, R. Fontana, L. Lane, and Ch. Nadler

Appl. Phys. Lett. 63, 1301 (1993); http://dx.doi.org/10.1063/1.109711 (3 pages) | Cited 15 times

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Type‐II second‐harmonic generation was investigated in channel waveguides fabricated in potassium titanyl phosphate (KTiOPO4) crystals by ion exchange. The birefringence of the guided‐wave structure was used to provide phasematching. A green (509 nm) output power of 0.25 mW was produced by frequency doubling the 1018‐nm output of a titanium:sapphire laser; this power is 200 times greater than what would be obtained in the corresponding bulk interaction. Phasematching for second‐harmonic generation was found to have broad tolerances with respect to temperature and wavelength. Blue light at 483 nm was produced by sum‐frequency mixing of 1064‐nm and 883‐nm light.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Effects of dispersive two‐photon transitions on femtosecond pulse propagation in semiconductor waveguides

C. C. Yang, Alain Villeneuve, George I. Stegeman, Cheng‐Hui Lin, and Hao‐Hsiung Lin

Appl. Phys. Lett. 63, 1304 (1993); http://dx.doi.org/10.1063/1.109712 (3 pages) | Cited 7 times

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It is demonstrated that the frequency spectrum of femtosecond pulses becomes highly asymmetric when propagating as transverse magnetic modes in semiconductor multiple quantum well channel waveguides at photon energies near half the band gap. Calculations based on the frequency dispersion in two‐photon transitions provide results consistent with the experiment.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.65.Pc Optical bistability, multistability, and switching, including local field effects
78.66.Fd III-V semiconductors

Low threshold buried heterostructure vertical cavity surface emitting laser

C. J. Chang‐Hasnain, Y. A. Wu, G. S. Li, G. Hasnain, K. D. Choquete, C. Caneau, and L. T. Florez

Appl. Phys. Lett. 63, 1307 (1993); http://dx.doi.org/10.1063/1.109713 (3 pages) | Cited 20 times

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We report the first low threshold, buried heterostructure (BH) vertical cavity surface emitting laser (VCSEL) using organometallic chemical vapor deposition regrowth. Very low threshold current of 0.8 mA and threshold current density of 490 A/cm2 are achieved with 8 and 32 μm diam BH VCSELs, respectively. Both 8 and 16 μm diam BH VCSELs emit a single TEM00 fundamental mode for current levels many times thresholds. Most single‐mode emissions are linearly polarized with a predetermined direction in the [011] crystal orientation.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Threshold characteristics of semiconductor microdisk lasers

R. E. Slusher, A. F. J. Levi, U. Mohideen, S. L. McCall, S. J. Pearton, and R. A. Logan

Appl. Phys. Lett. 63, 1310 (1993); http://dx.doi.org/10.1063/1.109714 (3 pages) | Cited 126 times

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This letter describes the threshold characteristics of InGaAs/InGaAsP microdisk lasers with optical emission near a wavelength λ=1.52 μm. More than 5% of the total spontaneous emission feeds into the lasing mode as the microdisk diameters reach 2 μm.
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42.55.Px Semiconductor lasers; laser diodes
42.50.-p Quantum optics

Numerical analysis on temperature dependence of XeCl‐lasing characteristics

Go Imada, Katsumi Masugata, Kiyoshi Yatsui, and Wataru Masuda

Appl. Phys. Lett. 63, 1313 (1993); http://dx.doi.org/10.1063/1.109715 (3 pages)

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The recombination rate constants for Xe++Cl−+Ne→XeCl∗+Ne and NeXe+ +Cl−+Ne→XeCl∗+2Ne have been calculated in a temperature range of 100–400 K. At 7.34×1019 cm−3 of gas density, both rate constants of the recombinations are found to increase to ∼7.5×10−6 cm3/s at 120 K, a factor of ∼4 higher than that at room temperature. The temperature dependence of XeCl‐lasing characteristics has also been simulated by a steady‐state kinetic‐simulation code. The simulation has indicated not only the enhancement of the laser output, but also the reduction of the halogen concentration in the lower temperature range.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.80.-s Electric discharges
82.30.Nr Association, addition, insertion, cluster formation

Noncritical second harmonic generation of CO2 laser radiation in mixed chalcopyrite crystal

G. C. Bhar, S. Das, U. Chatterjee, P. K. Datta, and Yu N. Andreev

Appl. Phys. Lett. 63, 1316 (1993); http://dx.doi.org/10.1063/1.109716 (3 pages) | Cited 11 times

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We have generated a tunable second harmonic of CO2 laser radiation noncritically for the first time in a potential mixed chalcopyrite crystal AgGaxIn1−xSe2. Wide angular acceptance and increased conversion as compared to AgGaSe2 have been observed and the tuning characteristics have been explained using the dispersion data of its two end crystals.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
78.20.Fm Birefringence

Electrically switchable window using a suspension of TiOxNy particles

Yasuhiro Saito, Masahiro Hirata, Hiroaki Tada, and Masato Hyodo

Appl. Phys. Lett. 63, 1319 (1993); http://dx.doi.org/10.1063/1.109717 (3 pages) | Cited 6 times

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A dipole particle suspension device was fabricated by sandwiching rodlike TiOxNy particles dispersed in a poly(dimethylsiloxane) derivative between two indium‐tin‐oxide coated glass substrates. On applying and removing an electric field of 2 kV mm−1 with a frequency of 200 Hz, a reversible solar transmittance change as much as 54.1% was obtained. The transmittance change was attributed to the large absorption coefficient (∼105 cm−1) of the particle and a drastic decrease in the number of particles taking part in the light absorption due to particle chain formation along the electric field.
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85.60.-q Optoelectronic devices
78.20.Jq Electro-optical effects

Transient electroluminescence from hole transporting emitting layer in nanosecond region

Chishio Hosokawa, Hiroshi Tokailin, Hisahiro Higashi, and Tadashi Kusumoto

Appl. Phys. Lett. 63, 1322 (1993); http://dx.doi.org/10.1063/1.109718 (3 pages) | Cited 35 times

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Transient electroluminescence (EL) for an organic thin film cell with a hole transporting emitting layer was observed by short voltage pulse measurements. For the cell with indium tin oxide/hole transporting emitting layer/Mg:Ag structure, we realized very fast response at a time about 20 ns. This response time has been the fastest in organic EL ever reported. In these measurements, we could observe carrier transit time. We found that this carrier transit time was attributed to that of holes in the emitting layer. The hole mobility in 120‐nm‐thick emitting layer was obtained to be 1±0.3×10−3 cm2/V s in the electric field region from 1 to 3 MV/cm. Furthermore, we could observe the fast EL decay component with a time constant of 3.0±1.5 ns, which was essentially attributed to the decay of singlet excited states.
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78.60.Fi Electroluminescence
73.40.Sx Metal-semiconductor-metal structures
72.80.Le Polymers; organic compounds (including organic semiconductors)

Effect of the Y‐junction output coupler on the lasing threshold of semiconductor ring lasers

J. P. Hohimer, D. C. Craft, and G. A. Vawter

Appl. Phys. Lett. 63, 1325 (1993); http://dx.doi.org/10.1063/1.109719 (3 pages) | Cited 3 times

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We report the first measurements of the effect of a Y‐junction output coupler on the continuous‐wave (cw) lasing threshold of rib‐waveguide semiconductor ring lasers. We show that the Y‐junction induced loss in this type of ring diode laser depends on the ring radius (r), and increases the lasing threshold current density substantially for devices with r<200 μm. For our devices with radii of 50–100 μm, the Y‐junction loss term is shown to be the dominant factor affecting the cw lasing threshold. We also report the first measurements of the dependence of the cw lasing threshold on the width (w) of the Y‐junction output coupler, and show that the threshold current density increases linearly for 0≤w≤9 μm.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Acoustic waves in a piezoelectric plate loaded by a dielectric fluid

C.‐H. Yang and D. E. Chimenti

Appl. Phys. Lett. 63, 1328 (1993); http://dx.doi.org/10.1063/1.109720 (3 pages) | Cited 4 times

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Measurements and calculations of reflection spectra of an X‐cut LiNbO3 plate immersed in a dielectric fluid have been performed, with the numerical results presented in an innovative image data format. The influence of dielectric fluid loading on all branches of the reflection coefficient function has been investigated. Strong piezoelectric coupling leads to unexpected plate wave dispersion in the fundamental symmetric mode, where the group velocity exceeds the phase velocity at low frequency. The experimental data are in excellent agreement with the results of an exact partial wave analysis. These phenomena and their effect on plate wave behavior can play an important role in the performance of chemical or physical liquid sensing devices.  
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43.35.-c Ultrasonics, quantum acoustics, and physical effects of sound
77.65.-j Piezoelectricity and electromechanical effects
62.65.+k Acoustical properties of solids

Low temperature synthesis and properties of lithium niobate thin films

V. Joshi, D. Roy, and M. L. Mecartney

Appl. Phys. Lett. 63, 1331 (1993); http://dx.doi.org/10.1063/1.109721 (3 pages) | Cited 14 times

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Thin films of lithium niobate were deposited on silicon (100) by a sol‐gel technique and were annealed in oxygen at 400 °C. The annealed films were characterized by x‐ray diffraction and transmission electron microscopy which showed crystallization to LiNbO3, a preferred orientation of the films, and an average grain size of about 0.5 μm. Electrical characterization of the films in the metal‐ferroelectric‐semiconductor configuration showed evidence for ferroelectricity via the hysteresis loop. The dielectric constant and dissipation factor were measured at frequencies from 10 Hz to 10 MHz with a dielectric constant of 35 and dissipation factor of 0.004 at 100 kHz. The current‐voltage characteristics of the films exhibited asymmetric behavior, indicating a possible Schottky barrier and showed a leakage current density of 1.1×10−4 A/cm2 at 3 V.
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81.15.Rs Spray coating techniques
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.-e Ferroelectricity and antiferroelectricity

Positron annihilation and internal surfaces

W. F. Huang and D. C. Huang

Appl. Phys. Lett. 63, 1334 (1993); http://dx.doi.org/10.1063/1.109722 (2 pages) | Cited 4 times

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Doppler broadened gamma spectra from positron annihilations in alumina and several zeolites were measured as a function of internal surfaces. In all cases, the gamma line shape parameter was found to vary proportionally with surface area. The results greatly enhance the potential of using positron annihilation spectroscopy as a microprobe for surface studies of porous materials.
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78.70.Bj Positron annihilation
81.05.Rm Porous materials; granular materials
81.70.-q Methods of materials testing and analysis

Heteroepitaxially grown diamond on a c‐BN {111} surface

Long Wang, Pirouz Pirouz, Alberto Argoitia, Jing Sheng Ma, and John C. Angus

Appl. Phys. Lett. 63, 1336 (1993); http://dx.doi.org/10.1063/1.109723 (3 pages) | Cited 31 times

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A continuous diamond film with a thickness of about 10 μm was grown on {111} faces of a single‐crystal cubic boron nitride (c‐BN) by hot‐filament chemical vapor deposition (CVD). Cross‐sectional selected area diffraction pattern (SADP) and high resolution electron microscopy (HREM) of the diamond/c‐BN interface show that the diamond has a parallel orientation relationship with respect to the substrate.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Threshold height for movement of C60 molecules on Si(111)‐7×7 with a scanning tunneling microscope

S. Maruno, K. Inanaga, and T. Isu

Appl. Phys. Lett. 63, 1339 (1993); http://dx.doi.org/10.1063/1.109724 (3 pages) | Cited 13 times

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Scanning tunneling microscope has been employed for intentional movement of C60 molecules adsorbed on Si(111)‐7×7 surface. Threshold conditions at which a C60 molecule starts moving from its adsorption site are investigated in relation to tunnel current and tip bias voltage. We find that there exists threshold height for the movement process. The threshold height estimated from a planar electrode model is in agreement with the vertical height of the adsorbed C60 molecules. Present results evidence that direct contact or close proximity between a mechanical probe and C60 molecules is required for movement of the molecules to occur.
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68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
73.20.At Surface states, band structure, electron density of states

Diamond deposition on polycrystalline films of cubic boron nitride

T. A. Friedmann, L. J. Bernardez, K. F. McCarty, E. J. Klaus, D. K. Ottesen, H. A. Johnsen, and W. M. Clift

Appl. Phys. Lett. 63, 1342 (1993); http://dx.doi.org/10.1063/1.109725 (3 pages) | Cited 10 times

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We have grown diamond films on films of cubic boron nitride (cBN). The cBN films were grown on Si(100) substrates using ion‐assisted pulsed laser deposition. Fourier transform infrared (FTIR) spectroscopy indicated that the BN films contained ∼75% sp3‐bonded cBN. The as‐grown cBN films were inserted with no surface pretreatment (e.g., abrading or scratching) into a conventional hot filament diamond reactor. In situ Raman spectroscopy was used to confirm diamond synthesis during growth. The nucleation density of the diamond films was estimated at 1×109/cm2, equivalent to or higher than the best values for scratched silicon substrates. In addition, we found that the cBN films were etched in the diamond reactor; a film thickness ≳1500 Å was required to prevent total film loss before diamond nucleation occurred. The presence of cBN under the diamond was established using FTIR spectroscopy and Auger electron spectroscopy.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology

Laser‐driven synthesis of nanocrystalline alumina powders from gas‐phase precursors

E. Borsella, S. Botti, R. Giorgi, S. Martelli, S. Turtù, and G. Zappa

Appl. Phys. Lett. 63, 1345 (1993); http://dx.doi.org/10.1063/1.109672 (3 pages) | Cited 16 times

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Carbon dioxide laser synthesis from gaseous precursors has been successfully applied to produce nanosized Al2O3 particles. Trimethylaluminum [Al(CH3)3] and nitrous‐oxide (N2O) were used as gas phase reactants. Ethylene (C2H4) was added as sensitizer gas. The as‐synthesized powder particles showed considerable carbon contamination and an amorphouslike structure. After thermal treatment at 1200–1400 °C, the powder transformed to hexagonal α‐Al2O3 with very low carbon contamination, confirmed by x‐ray diffraction, x‐ray photoelectron spectroscopy, and chemical analysis. The thermally treated powder was composed of spherical single‐crystal nanoparticles with a mean size 〈D〉 of 15–20 nm, as determined by x‐ray diffraction, electron microscopy, and Brunauer–Emmett–Teller specific surface measurements. The laser synthesized Al2O3 particles are suitable dispersoids for intermetallic alloy technology.
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81.05.Mh Cermets, ceramic and refractory composites
81.10.Bk Growth from vapor
82.33.Vx Reactions in flames, combustion, and explosions

Etching technique for transmission electron microscopy observation of nanostructure of visible luminescent porous silicon

O. Teschke, M. C. Goncalves, and F. Galembeck

Appl. Phys. Lett. 63, 1348 (1993); http://dx.doi.org/10.1063/1.109673 (3 pages) | Cited 14 times

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We present a special configuration for the electrochemical etching of silicon, in which thin samples suitable for direct transmission electron microscopy observation are produced. This technique allows the observation of images of an irregular matrix of pores and individual columnlike structures with a ∼15 Å cross‐sectional diameter. These images show that the preferential etching directions are the projections of the {100} planes on the (111) plane for the etched <111≳‐oriented silicon. The large pore (≳50 nm diam) axis orientation is independent of the preferential etching direction and is parallel to the etching current direction.
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68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
78.55.Hx Other solid inorganic materials
81.65.-b Surface treatments

Growth of undoped polycrystalline Si by an ultrahigh vacuum chemical vapor deposition system

Horng‐Chih Lin, Hsiao‐Yi Lin, Chun‐Yen Chang, Tan‐Fu Lei, P. J. Wang, and Chih‐Yeh Chao

Appl. Phys. Lett. 63, 1351 (1993); http://dx.doi.org/10.1063/1.109674 (3 pages) | Cited 9 times

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Deposition of undoped polycrystalline‐silicon (poly‐Si) films on SiO2 using an ultrahigh vacuum chemical vapor deposition system was investigated. Poly‐Si films with high crystallinity were obtained at a temperature as low as 525 °C. The layer growth process was found to proceed with an activation energy of 44±2 kcal/mol, and is dominated by the desorption rate of surface‐bonded hydrogen atoms. An incubation time was observed prior to the film deposition. This incubation period increased with decreasing growth temperature, resulting from slower nucleation and growth rates at lower temperatures.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Measurement of the intersubband scattering rate in semiconductor quantum wells by excited state differential absorption spectroscopy

Jerome Faist, Federico Capasso, Carlo Sirtori, Deborah L. Sivco, Albert L. Hutchinson, Sung Nee G. Chu, and Alfred Y. Cho

Appl. Phys. Lett. 63, 1354 (1993); http://dx.doi.org/10.1063/1.109675 (3 pages) | Cited 61 times

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A new technique for the measurement of the intersubband lifetime in semiconductor quantum wells is demonstrated. Electrons are optically excited from the ground state to the first excited state of a doped quantum well. From measurements of the absorption cross section between excited states, we find a lifetime equal to τs=0.65±0.15 ps for a 85 Å GaAs quantum well and τs=0.8±0.2 ps for a 100 Å Ga0.47In0.53As quantum well, in good agreement with the theoretical predictions of Ferreira and Bastard [Phys. Rev. B 40, 1074 (1989)]. In addition, our experiments unambiguously show that the intersubband absorption line is homogeneously broadened at cryogenic temperatures (≤100 K).
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73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.47.-p Spectroscopy of solid state dynamics

Determining band offsets with triple quantum‐well structures

Garnett W. Bryant, J. L. Bradshaw, R. P. Leavitt, M. S. Tobin, and J. T. Pham

Appl. Phys. Lett. 63, 1357 (1993); http://dx.doi.org/10.1063/1.109676 (3 pages) | Cited 8 times

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Coupled triple quantum‐well GaAs/AlGaAs heterostructures have been designed to exhibit simultaneous electron and hole tunneling from the central well to opposite side wells at a fixed applied bias. Band offset is the critical parameter for the design of structures with simultaneous resonances. Photocurrent measurements reveal which triple quantum‐well structures exhibit simultaneous resonances. A band offset ratio near 62:38 is required to correctly engineer structures with simultaneous resonances.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Gk Tunneling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Confinement of high Be doping levels in AlInAs/GaInAs npn heterojunction bipolar transistors by low temperature molecular‐beam epitaxial growth

R. A. Metzger, M. Hafizi, W. E. Stanchina, T. Liu, R. G. Wilson, and L. G. McCray

Appl. Phys. Lett. 63, 1360 (1993); http://dx.doi.org/10.1063/1.109677 (3 pages) | Cited 15 times

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AlInAs/GaInAs npn heterojunction bipolar transistors (HBTs) have been grown over a substrate temperature range of 280–450 °C with Be base doping levels ranging from 2.0×1019 to 1.6×1020 cm−3. We have determined that for a desired base doping level there exists an optimum growth temperature at which the Be is confined in the base and at the same time the dc current gain of the HBT is maximized.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
85.30.Pq Bipolar transistors

Boron delta‐doped Si metal semiconductor field‐effect transistor grown by molecular‐beam epitaxy

S. L. Wu, T. K. Carns, S. J. Wang, and K. L. Wang

Appl. Phys. Lett. 63, 1363 (1993); http://dx.doi.org/10.1063/1.110769 (3 pages) | Cited 6 times

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A working p‐type Si metal semiconductor field‐effect transistor structure, utilizing a boron delta‐doped layer as the conducting channel, has been successfully fabricated. Based on Hall measurements, a hole mobility of 120 (180) cm2 V−1 s−1 at 300 (77) K has been obtained. The sheet carrier density of the delta layer was estimated to be about 1.8×1012 cm−2. It is shown that the delta field‐effect transistor exhibits an extrinsic transconductance of 640 μS/mm for a gate length of 5 μm, and a high gate to drain breakdown voltage (≳18 V). By reducing the gate length to 1 μm, a transconductance of up to 3.2 mS/mm is expected.
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85.30.Tv Field effect devices
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Characteristics of electron traps in In0.5Ga0.5P generated by recombination enhanced defect reactions

M. G. Kim, S. D. Kwon, C. H. Kim, J. B. Lee, Byung‐Doo Choe, and H. Lim

Appl. Phys. Lett. 63, 1366 (1993); http://dx.doi.org/10.1063/1.109678 (3 pages) | Cited 8 times

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We report the observation of a new type of intrinsic defect in n‐In0.5Ga0.5P which can be generated by recombination enhanced defect reaction (REDR) mechanism. It is observed that the increases of the concentrations of this defect and of another native defect due to REDR have nearly linear time dependence before saturation. This observation and other experimental results suggest that the two observed defects are complex defects. Other electrical properties of these defects such as alloy broadening effect on the thermal ionization energy are also described.
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71.55.Eq III-V semiconductors
72.80.Ey III-V and II-VI semiconductors

Giant recombination centers in Al0.10Ga0.90As grown by metalorganic chemical vapor deposition

J. Zhang, B. M. Keyes, S. E. Asher, R. K. Ahrenkiel, and M. L. Timmons

Appl. Phys. Lett. 63, 1369 (1993); http://dx.doi.org/10.1063/1.109679 (3 pages) | Cited 4 times

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The hole lifetime in n‐type Al0.10Ga0.90As is controlled by recombination centers with capture cross sections of about 10−12 cm2. Correlated time‐resolved photoluminescence and deep level transient spectroscopy measurements link these centers to well‐known impurity oxygen complexes. Film growth at temperatures above about 720 °C eliminate these oxygen complexes from the epitaxial layer resulting in greatly improved electronic properties.
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73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
71.55.Eq III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Polythienylenevinylene thin‐film transistor with high carrier mobility

H. Fuchigami, A. Tsumura, and H. Koezuka

Appl. Phys. Lett. 63, 1372 (1993); http://dx.doi.org/10.1063/1.109680 (3 pages) | Cited 84 times

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A thin‐film transistor (TFT) with high carrier mobility has been fabricated using precursor‐route poly(2,5‐thienylenevinylene) (PTV) as semiconductor. The carrier mobility has been determined to be 0.22 cm2/V s, which is in the same level of that of amorphous silicon TFT. It has also been made clear that the carrier mobility is linearly proportional to the conversion ratio from the insulated precursor polymer to π‐conjugated PTV. The π‐conjugation length is crucial to obtain high carrier mobility in π‐conjugated polymer TFT.
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85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.50.Dn Low-field transport and mobility; piezoresistance
73.61.Ph Polymers; organic compounds
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