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13 Sep 1993

Volume 63, Issue 11, pp. 1453-1587

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Distributed‐Bragg reflectors and 90° couplers for cylindrical wave devices

Yuan Jiang and Jill Hacker

Appl. Phys. Lett. 63, 1453 (1993); http://dx.doi.org/10.1063/1.109653 (3 pages) | Cited 2 times

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Multilayer reflectors for cylindrical waves, and grating distributed reflectors and 90° couplers for guided cylindrical waves, are important components for optical devices. We find that the spacings of the multilayers and grating steps should not be multiple of a quarter wavelength as suggested by the periodic‐phase‐change argument. We outline the design principles for these components. Explanations and solutions to the skewed‐wave pattern and multimode‐lasing problems observed in the concentric‐circle‐grating‐laser experiments are provided.
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42.79.Dj Gratings
42.79.Fm Reflectors, beam splitters, and deflectors
42.55.Px Semiconductor lasers; laser diodes

Low‐voltage hetero‐nipi waveguide modulators with GaAs/AlAs quantum wells

G. W. Yoffe, J. Brübach, F. Karouta, W. C. van der Vleuten, L. M. F. Kaufmann, and J. H. Wolter

Appl. Phys. Lett. 63, 1456 (1993); http://dx.doi.org/10.1063/1.109654 (3 pages) | Cited 5 times

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We present a waveguide modulator with a GaAs/AlAs multiple‐quantum‐well hetero‐nipi core. Selective lateral ohmic contacts connect all the p‐type layers together and likewise all the n‐type layers. A small applied voltage creates a large change in the field across each thin undoped quantum well region, causing large changes in the absorption coefficient and refractive index. A 300‐μm‐long device gave a 10:1 modulation ratio at 1‐V reverse bias with 4‐dB zero‐bias absorption loss. 400‐ and 900‐μm‐long devices gave a 180° phase shift with negligible absorption loss at 1.5 and 0.9 V, respectively.
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42.79.Hp Optical processors, correlators, and modulators
78.66.Fd III-V semiconductors
78.20.Jq Electro-optical effects

On the characteristics of narrow‐band resonant modulation of semiconductor lasers beyond relaxation oscillation frequency

K. Y. Lau and J. B. Georges

Appl. Phys. Lett. 63, 1459 (1993); http://dx.doi.org/10.1063/1.109655 (3 pages) | Cited 3 times

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See Also: Erratum

Show Abstract
We consider practical issues related to narrow‐band resonant modulation of laser diodes at frequencies above relaxation oscillation. We established the limits to the performance of this approach based on bandwidth, noise, and intermodulation distortion considerations, as well as the proper trade‐offs between these three quantities.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking

Phase‐matched second‐harmonic generation from free‐standing periodically stacked polymer films

G. Khanarian, M. A. Mortazavi, and A. J. East

Appl. Phys. Lett. 63, 1462 (1993); http://dx.doi.org/10.1063/1.109656 (3 pages) | Cited 14 times

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Visible green light has been observed by quasi‐phase‐matched second‐harmonic generation from a periodic stack of free‐standing poled polymer films, when pumped by a cw mode‐locked near‐infrared laser. The total thickness of the polymer film and phase‐matching length was 300 μm with a conversion efficiency of 10−6–10−5 depending on absorption. A polymer thin film processing technique is described for this application that could make large area poled and stretched films with enhanced nonlinear optical susceptibilities.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Jk Polymers and organics
78.66.Qn Polymers; organic compounds

Diode‐laser‐pumped InGaAs/GaAs/AlGaAs heterostructure lasers with low internal loss and 4‐W average power

H. Q. Le, W. D. Goodhue, P. A. Maki, and S. Di Cecca

Appl. Phys. Lett. 63, 1465 (1993); http://dx.doi.org/10.1063/1.109657 (3 pages) | Cited 9 times

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Optically pumped InGaAs/GaAs/AlGaAs heterostructure lasers exhibit differential quantum efficiencies that are not sensitive to output coupling or active length, indicating low free carrier absorption loss. A broad‐stripe 2.5‐mm‐long device yielded 4‐W average power and 20‐W peak power.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Effects of nonuniform current injection on the spectral dynamics of multisection distributed feedback lasers

J. M. Iannelli, T. Schrans, T. R. Chen, Y. H. Zhuang, and A. Yariv

Appl. Phys. Lett. 63, 1468 (1993); http://dx.doi.org/10.1063/1.109658 (3 pages) | Cited 1 time

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The effects of nonuniform current injection on the linewidth enhancement factor (α) and the adiabatic chirp in a multielectrode distributed feedback laser are measured through a FM/AM modulation technique. This technique measures the adiabatic chirp due solely to carrier density effects and excludes the contributions of current induced temperature changes. The effects are shown to be a function of the pumping ratio between two active sections in the laser. The adiabatic chirp is enhanced by as much as a factor of 3 and the α parameter is reduced from a value of approximately 4 to 2.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Cholesteric/polymer dispersed light shutters

J. L. West, R. B. Akins, J. Francl, and J. W. Doane

Appl. Phys. Lett. 63, 1471 (1993); http://dx.doi.org/10.1063/1.109659 (3 pages) | Cited 32 times

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We report cholesteric/polymer dispersed (CPD) materials that switch from a reflecting, planar state to a relatively transparent, focal conic state. The reflective wavelength of the CPD materials can be continuously adjusted by varying the cholesteric pitch length. The electro‐optic properties of these materials are similar to the recently reported polymer stabilized cholesteric materials; however, the polymer concentration is sufficient to provide a self‐sustaining and self‐adhering film, offering the potential of large area devices fabricated on flexible substrates.
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61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
42.79.Kr Display devices, liquid-crystal devices
78.66.Sq Composite materials
78.20.Jq Electro-optical effects

Light emitting nanocrystalline silicon prepared by dry processing: The effect of crystallite size

M. Rückschloss, B. Landkammer, and S. Vepřek

Appl. Phys. Lett. 63, 1474 (1993); http://dx.doi.org/10.1063/1.109660 (3 pages) | Cited 57 times

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A new technique for the preparation of light emitting nanocrystalline (nc) silicon by a combination of plasma chemical vapor deposition and post‐treatment consisting of oxidation and annealing in forming gas is reported. The advantage of this processing consists in the possibility of a control of the crystallite size and the fraction of nc‐Si in the film. A strong increase of the photoluminescence below 35 Å, as predicted by theory, is documented experimentally.
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78.55.Hx Other solid inorganic materials
73.20.-r Electron states at surfaces and interfaces
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Transient analysis of a nonlinear fiber ring resonator

F. Javier Fraile‐Peláez, Miguel Prol, David J. Santos, and José M. Soto‐Crespo

Appl. Phys. Lett. 63, 1477 (1993); http://dx.doi.org/10.1063/1.109661 (3 pages) | Cited 10 times

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In this letter we study the transient behavior of a nonlinear fiber ring resonator operating both as an optical bistable and as a differential amplifier. The speed of response of the structure is investigated, and some general considerations on the performance of these kinds of devices are presented.
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42.81.Wg Other fiber-optical devices
42.65.Pc Optical bistability, multistability, and switching, including local field effects

Reflection noise in vertical cavity surface emitting lasers

J. W. Bae, H. Temkin, S. E. Swirhun, W. E. Quinn, P. Brusenbach, C. Parsons, M. Kim, and T. Uchida

Appl. Phys. Lett. 63, 1480 (1993); http://dx.doi.org/10.1063/1.109662 (3 pages) | Cited 6 times

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We describe the effect of back reflections on the relaxation‐oscillation peaks of low threshold (<6 mA), high intrinsic bandwidth (31 GHz) vertical cavity surface emitting lasers. With the largest feedback possible with our experimental arrangement, x=−5.8 dB, the relaxation‐oscillation peak breaks up into a series of sharp resonances with the spacing corresponding to the round tip frequency of the external cavity. In contrast to edge emitting lasers, no effect of reflections is observed for feedback levels x<−12.9 dB. This relative immunity of vertical cavity lasers to reflection noise is expected to be of interest for their applications to fiber communications.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Mi Dynamical laser instabilities; noisy laser behavior

Broadband thermal optical limiter

B. L. Justus, A. L. Huston, and A. J. Campillo

Appl. Phys. Lett. 63, 1483 (1993); http://dx.doi.org/10.1063/1.109663 (3 pages) | Cited 36 times

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The limiting behavior of nigrosin dye dissolved in carbon disulfide was investigated in an f/5 defocusing geometry using 6 ns duration 532 nm laser excitation. Nigrosin dye is a broadband visible light absorber that is used here in conjunction with the large thermal nonlinearity of carbon disulfide solvent to defocus intense incident visible light. A limiting threshold energy of 40 nJ, corresponding to a fluence of only 100 mJ/cm2 in the solution, was observed with device absorption adjusted to 53%.
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42.79.-e Optical elements, devices, and systems
42.65.-k Nonlinear optics
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

High temperature (77 °C) operation of 634 nm InGaAlP multiquantum‐well laser diodes with tensile‐strained quantum wells

Minoru Watanabe, John Rennie, Masaki Okajima, and Gen‐ichi Hatakoshi

Appl. Phys. Lett. 63, 1486 (1993); http://dx.doi.org/10.1063/1.109664 (3 pages) | Cited 5 times

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634 nm InGaAlP multiquantum‐well (MQW) laser diodes, with tensile‐strained InGaP well layers, have been investigated. A threshold current as low as 59 mA was achieved, at 20 °C, under continuous wave (cw) operation. These MQW laser diodes were able to operate up to temperatures as high as 77 °C under cw conditions. This maximum cw operation temperature is the highest ever reported for 634 nm laser diodes. These MQW laser diodes have shown stable cw operation over 2000 h at an output power of 3 mW, at an ambient temperature of 50 °C.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Mirrorless all‐optical bistability in bacteriorhodopsin

D. V. G. L. N. Rao, F. J. Aranda, B. J. Wiley, J. A. Akkara, D. L. Kaplan, and J. F. Roach

Appl. Phys. Lett. 63, 1489 (1993); http://dx.doi.org/10.1063/1.109665 (3 pages) | Cited 22 times

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We report direct observations of all‐optical mirrorless bistability associated with saturable absorption in three kinds of bacteriorhodopsin (BR) samples: wild‐type BR in water solution and dispersed in thin films of a polymer matrix as well as water solution of the genetically engineered mutant BRD96N. The experiments are carried out with picosecond pulses at 532 nm. The values measured for the saturation intensity are explained in terms of the relaxation of the excited M state population to the B state of the BR photocycle for the three kinds of samples studied.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
87.15.M- Spectra of biomolecules
78.66.Qn Polymers; organic compounds

Nanoindentation of a supported Au cluster

D. M. Schaefer, A. Patil, R. P. Andres, and R. Reifenberger

Appl. Phys. Lett. 63, 1492 (1993); http://dx.doi.org/10.1063/1.109666 (3 pages) | Cited 15 times

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An atomic force microscope has been used in the attractive (noncontact) force mode to image individual nanometer‐size Au clusters preformed in the gas phase and deposited on a variety of atomically flat substrates. Using this technique, it is possible to reliably image preformed clusters in their as‐deposited positions. This capability allows nanoindentation studies to measure the mechanical properties of individual nanometer‐size clusters supported on atomically flat substrates. We find that the elastic modulus of a 3.1‐nm Au cluster is 56−19+33 GPa. This should be compared to a bulk value of 80 GPa for polycrystalline Au and 120 GPa for crystalline Au in the [111] direction.
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68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
61.46.-w Structure of nanoscale materials
62.20.-x Mechanical properties of solids

Aluminum‐arsenide precipitation in an arsenic‐implanted aluminum thin film

Takamaro Kikkawa, Hiroshi Kitajima, Tatsuo Sato, and Keiji Shiotani

Appl. Phys. Lett. 63, 1495 (1993); http://dx.doi.org/10.1063/1.109667 (3 pages)

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Arsenic (As) ion‐implanted Al thin films were investigated by transmission electron microscopy (TEM). The TEM analysis revealed that fcc aluminum‐arsenide precipitates were formed both in the grains and along the grain boundaries of the arsenic‐implanted Al layer after annealing at 450 °C. Large precipitates were formed at the grain boundaries while no intragranular precipitates were formed in the vicinity of grain boundaries, due to vacancy accumulation at the grain boundaries and to vacancy depletion in the vicinity of grain boundaries, respectively.
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81.30.Mh Solid-phase precipitation
61.80.Jh Ion radiation effects
61.72.up Other materials
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties

Scaleable stagnation‐flow reactors for uniform materials deposition: Application to combustion synthesis of diamond

K. F. McCarty, E. Meeks, R. J. Kee, and A. E. Lutz

Appl. Phys. Lett. 63, 1498 (1993); http://dx.doi.org/10.1063/1.109668 (3 pages) | Cited 14 times

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We describe two inherently scaleable geometries for chemical‐vapor‐deposition and heat‐transfer processes that are based on stagnation flows. The ‘‘coflow’’ and ‘‘trumpet‐bell’’ designs result in radially uniform fluxes to surfaces and they optimize the use of reagents. Using a trumpet‐bell burner, we have grown uniform films of diamond from a substrate‐stabilized flat flame of C2H2/H2/O2.  
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Cross‐sectional scanning tunneling microscopy of electrodeposited metal oxide superlattices

T. D. Golden, R. P. Raffaelle, and J. A. Switzer

Appl. Phys. Lett. 63, 1501 (1993); http://dx.doi.org/10.1063/1.109669 (3 pages) | Cited 6 times

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We have used scanning tunneling microscopy to characterize cleaved cross sections of Pb‐Tl‐O superlattices. The metal oxide ceramic superlattices were electrodeposited from a single solution, with layer thicknesses as small as 1.5 nm. The lattice parameter of the fcc fluorite‐type oxides is approximately 0.536 nm. Modulation wavelengths were determined using Fourier analysis of the STM images and found to be in good agreement with Faraday calculations and x‐ray diffraction measurements. The STM is especially well suited for the measurement of modulation wavelengths that are too large to measure by x‐ray diffraction, but too small to measure by scanning electron microscopy.
Show PACS
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Misfit dislocation microstructure and kinetics for InxGa1−xAs/InP(100) and (110) interfaces under tensile and compressive stress

R. Hull, R. A. Logan, B. E. Weir, and J. M. Vandenberg

Appl. Phys. Lett. 63, 1504 (1993); http://dx.doi.org/10.1063/1.109670 (3 pages) | Cited 9 times

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Misfit dislocation microstructures and strain relaxation kinetics are studied for 1% lattice mismatched (100) and (110) interfaces under tensile and compressive stress in the InxGa1−xAs/InP system. Misfit dislocations are observed to be either 60° a/2〈101〉 total [for (100) compressive and (110) tensile configurations] or 90° a/6〈112〉 partial [dominant for (100) tensile and (110) compressive configurations] types. Relaxation kinetics are observed to be substantially faster for 90° a/6〈112〉 than 60° a/2〈101〉 dislocations. This produces significantly different relaxation rates for (100) versus (110) interfaces and compressive versus tensile stress. The relaxation is also found to be an extremely strong function of excess stress, with an increase of about two orders of magnitude of dislocation density per 100 MPa increase in excess stress for interfacial dislocation densities in the range 102–106 cm−1.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.55.-a Thin film structure and morphology
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

Femtosecond ellipsometric study of nonequilibrium carrier dynamics in Ge and epitaxial Si1−xGex

H. R. Choo, X. F. Hu, M. C. Downer, and V. P. Kesan

Appl. Phys. Lett. 63, 1507 (1993); http://dx.doi.org/10.1063/1.109671 (3 pages) | Cited 15 times

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The time‐resolved, above‐gap optical response of optically thick Si1−xGex alloys to carrier injection by a femtosecond pump pulse is measured across the entire compositional range (0≤x≤1) using a novel femtosecond ellipsometric technique which clearly distinguishes the real and imaginary parts of the time‐varying dielectric function ϵ1(t)+iϵ2(t). The results are modeled microscopically in terms of the Drude contribution from a diffusing hot electron‐hole plasma, augmented by transient‐induced absorption from hot‐carrier‐induced band renormalization. Further corrections from thermal band‐gap shrinkage, intervalley scattering, and transient interband absorption saturation are also discussed.
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78.47.-p Spectroscopy of solid state dynamics
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.80.Jc Other crystalline inorganic semiconductors

Passivation and depassivation of silicon dangling bonds at the Si/SiO2 interface by atomic hydrogen

E. Cartier, J. H. Stathis, and D. A. Buchanan

Appl. Phys. Lett. 63, 1510 (1993); http://dx.doi.org/10.1063/1.110758 (3 pages) | Cited 101 times

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Atomic hydrogen is found to simultaneously passivate and depassivate silicon dangling bonds at the Si(111)/SiO2 interface at room temperature via the reactions Pb+H0→PbH and PbH+H0→Pb+H2. The passivation reaction occurs more efficiently keeping the steady‐state Pb density at a low value of only 3–6×1011 cm−2 during atomic hydrogen exposure. This low Pb density can only account for a small fraction of the total number of interface states produced by atomic hydrogen.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
71.55.-i Impurity and defect levels
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Mapping of mobile charges on insulator surfaces with the electrostatic force microscope

K. Domanský, Y. Leng, C. C. Williams, J. Janata, and D. Petelenz

Appl. Phys. Lett. 63, 1513 (1993); http://dx.doi.org/10.1063/1.110759 (3 pages) | Cited 24 times

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Migration of surface ions in lateral fields on insulator surfaces may modify the electrical characteristics of underlying semiconductor structures causing device instabilities. A high sensitivity electrostatic force microscope is used to image the movement and spatial distribution of surface ions on Si3N4. Mobile surface ions are distributed by the fringing fields of a p‐n junction and an open‐gate field‐effect transistor. The surface charge distribution and topography are imaged simultaneously on a micrometer scale.
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68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
73.25.+i Surface conductivity and carrier phenomena
85.30.Tv Field effect devices

Effects of electron‐beam‐assisted dry etching on optical and electrical properties

Heiji Watanabe, Yukinori Ochiai, and Shinji Matsui

Appl. Phys. Lett. 63, 1516 (1993); http://dx.doi.org/10.1063/1.110760 (3 pages) | Cited 2 times

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The degree of damage induced by electron‐beam (EB)‐assisted dry etching is optically and electrically characterized and compared with ion‐beam‐assisted etching (IBAE). The optical and electrical damage are evaluated using the photoluminescence (PL) from GaAs/AlGaAs quantum well (QW) structures and the Hall effect in two‐dimensional electron gas (2DEG) heterostructures, respectively. These layered samples are etched by a newly proposed EB‐assisted selective dry etching technique using Cl2 and SF6 gases. EB‐assisted dry etching is proven to produce no degradation of either type of property, whereas a 54% reduction in PL intensity from a 30‐nm‐deep QW and 8% reduction in Hall mobility in a 51‐nm‐deep 2DEG are observed for IBAE.
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85.40.Hp Lithography, masks and pattern transfer
61.80.Fe Electron and positron radiation effects
81.65.-b Surface treatments

Shallow Pb3+ hole traps in lead zirconate titanate ferroelectrics

John Robertson, William L. Warren, Bruce A. Tuttle, Duane Dimos, and Donald M. Smyth

Appl. Phys. Lett. 63, 1519 (1993); http://dx.doi.org/10.1063/1.110761 (3 pages) | Cited 53 times

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A combination of electron paramagnetic resonance and band structure calculations is used to show that the Pb2+ ions in lead zirconate titanate materials can act as shallow hole traps to give Pb3+ centers. The Pb3+ centers are created by optical illumination and are found to be metastable at room temperature. Their decay kinetics follow a stretched exponential function which suggests dispersive transport. The traps have the same character as the upper valence band which is formed from the hybridization of Pb s and O p states.
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71.55.Ht Other nonmetals
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Far‐infrared photon‐induced current in a quantum point contact

Rolf A. Wyss, C. C. Eugster, J. A. del Alamo, and Qing Hu

Appl. Phys. Lett. 63, 1522 (1993); http://dx.doi.org/10.1063/1.110736 (3 pages) | Cited 41 times

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Motivated by the recently developed theory of photon‐assisted quantum transport, we have studied transport properties of an antenna‐coupled quantum point contract under coherent far‐infrared (285 GHz) radiation. A pronounced photon‐induced drain/source current is observed. The amplitude of the photon‐induced current is about 10% of that corresponding to a quantized conductance step, and it oscillates with the gate voltage. Our analysis suggests that the observed photon‐induced current is mainly due to heating of the electron gas in the source and drain (a bolometric effect) rather than photon‐assisted quantum transport. Future improvement of the device parameters to enhance the effect of photon‐assisted transport will be discussed.
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73.40.-c Electronic transport in interface structures
73.50.Pz Photoconduction and photovoltaic effects
85.60.Gz Photodetectors (including infrared and CCD detectors)

Anomalous doping behavior of in situ boron‐doped polycrystalline silicon deposited by ultrahigh vacuum chemical vapor deposition

Horng‐Chih Lin, Hsiao‐Yi Lin, Chun‐Yen Chang, Tan‐Fu Lei, P. J. Wang, Ray‐Chern Deng, Jandel Lin, and Chih‐Yeh Chao

Appl. Phys. Lett. 63, 1525 (1993); http://dx.doi.org/10.1063/1.110737 (3 pages) | Cited 2 times

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The deposition of in situ heavily boron‐doped polycrystalline silicon (poly‐Si) films was studied using an ultrahigh vacuum/chemical vapor deposition system. Fully activated carrier concentrations up to 3×1020 cm−3 were obtained for the as‐deposited films grown at 550 °C. For boron concentration beyond this level, the crystallinity of poly‐Si films degraded with increasing boron concentration, which resulted in an anomalous rise in resistivity. This crystallinity degradation occurred at a higher rate for films grown on a SiO2 surface than those grown on an undoped poly‐Si surface. It is attributed to the preferential adsorption of boron atoms on the SiO2 surface. Under a high B2H6 flux condition, a large amount of boron atoms would accumulate on the SiO2 surface before the formation of Si nuclei, and thus disturbs the subsequent film deposition and grain growth processes.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
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