634 nm InGaAlP multiquantum‐well (MQW) laser diodes, with tensile‐strained InGaP well layers, have been investigated. A threshold current as low as 59 mA was achieved, at 20 °C, under continuous wave (cw) operation. These MQW laser diodes were able to operate up to temperatures as high as 77 °C under cw conditions. This maximum cw operation temperature is the highest ever reported for 634 nm laser diodes. These MQW laser diodes have shown stable cw operation over 2000 h at an output power of 3 mW, at an ambient temperature of 50 °C.