High coercivity, c‐axis randomly in‐plane oriented barium hexaferrite thin films have been successfully fabricated by using conventional rf diode sputtering and post‐deposition annealing. Coercivities as high as 4100 Oe have been achieved. Ms, Sq, S∗, SFD, and SFDr reach the values of about 270 emu/cc, 0.63, 0.90, 0.12, and 0.084, respectively. CoTi doping not only reduces the coercivity, but also reduces the grain size and improves the c‐axis in‐plane orientation. The composition of doped films can be controlled through different diffusion processes. In this way coercivities in a range between several hundred oersteds and 4000 Oe can be easily obtained.