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20 Sep 1993

Volume 63, Issue 12, pp. 1595-1706

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Optical field enhanced multiphoton photoemission in copper mirrors

T. Srinivasan‐Rao, J. Fischer, and T. Tsang

Appl. Phys. Lett. 63, 1595 (1993); http://dx.doi.org/10.1063/1.110757 (3 pages) | Cited 3 times

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Photoemission from diamond turned copper mirror with laser beams of intensity 1011 W/cm2 at the photon energy of 2 eV and pulse duration of ∼300 fs indicates that the electric field associated with the photons enhances the photoemission. At the optimum incident angle, the electron yield with p‐polarized light was 75 times larger than that with s‐polarized light and 4 times larger than that at normal incidence for a constant energy. These enhancements were underestimated by the changes in the absorption and were attributed in this letter to the optical field effect.
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79.60.Bm Clean metal, semiconductor, and insulator surfaces
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
79.20.Ds Laser-beam impact phenomena
41.75.Fr Electron and positron beams

Passive mode locking of monolithic semiconductor ring lasers at 86 GHz

J. P. Hohimer and G. A. Vawter

Appl. Phys. Lett. 63, 1598 (1993); http://dx.doi.org/10.1063/1.110808 (3 pages) | Cited 14 times

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We report the development of monolithic passively mode‐locked semiconductor ring lasers. These direct‐waveguide‐coupled lasers with a ring radius of 150 μm emit a continuous train of 1.3 ps transform‐limited lasing pulses at 86 GHz repetition rate with a peak power of 10 mW/pulse at the laser output facet. We also observe, under certain conditions, the presence of a second pulse in the ring cavity doubling the pulse repetition rate to 172 GHz.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking

Pulsed laser deposition of Ga‐La‐S chalcogenide glass thin film optical waveguides

K. E. Youden, T. Grevatt, R. W. Eason, H. N. Rutt, R. S. Deol, and G. Wylangowski

Appl. Phys. Lett. 63, 1601 (1993); http://dx.doi.org/10.1063/1.110730 (3 pages) | Cited 24 times

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Thin film optical waveguides of the chalcogenide glass Ga‐La‐S have been deposited on substrates of CaF2 and microscope glass by the technique of pulsed laser deposition. The chalcogenide properties of photobleaching, photodoping, and photoinduced refractive index changes have been observed and preliminary experiments carried out. The refractive index and thickness of the layer were verified using a waveguide ‘‘dark mode’’ analysis technique.
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81.15.Fg Pulsed laser ablation deposition
42.70.Ce Glasses, quartz
42.79.Gn Optical waveguides and couplers
78.66.Jg Amorphous semiconductors; glasses

Talbot assisted hexagonal beam patterning in a thin liquid crystal film with a single feedback mirror at negative distance

E. Ciaramella, M. Tamburrini, and E. Santamato

Appl. Phys. Lett. 63, 1604 (1993); http://dx.doi.org/10.1063/1.110735 (3 pages) | Cited 23 times

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We investigate experimentally the generation of hexagonal patterns of filaments in a laser beam traversing a thin liquid crystal cell placed in front of a single ‘‘virtual mirror.’’ This mirror is the image of a real mirror and is placed either in front of or behind the cell. The results clearly support the physical idea that the Talbot effect governs the phenomenon. Edge effects due to the limited width of the pump beam are accounted for both theoretically and experimentally.
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42.65.-k Nonlinear optics
42.25.-p Wave optics
42.79.Kr Display devices, liquid-crystal devices

High single‐transverse‐mode output from external‐cavity surface‐emitting laser diodes

M. A. Hadley, G. C. Wilson, K. Y. Lau, and J. S. Smith

Appl. Phys. Lett. 63, 1607 (1993); http://dx.doi.org/10.1063/1.110710 (3 pages) | Cited 36 times

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Room‐temperature cw electrically pumped external‐cavity surface‐emitting laser diodes are reported. The external cavity provides a way to control the transverse modes of the surface‐emitting laser diodes. Powers greater than 100 mW pulsed and 2.4 mW cw in the lowest order (TEM00) transverse mode are reported. The surface‐emitting laser diode was grown on a p‐doped substrate, resulting in uniform current injection in devices as large as 100 μm in diameter. To our knowledge, this is also the first report of a working surface‐emitting laser diode grown on a p‐type substrate.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Optical bistability in an InGaAs/InP multiple quantum well waveguide Fabry–Perot cavity

J. E. Ehrlich, D. T. Neilson, A. C. Walker, G. T. Kennedy, R. S. Grant, W. Sibbett, M. Hopkinson, and M. Pate

Appl. Phys. Lett. 63, 1610 (1993); http://dx.doi.org/10.1063/1.110711 (3 pages) | Cited 8 times

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We report measurements of quasi‐cw optical bistability in an InGaAs/InP multiple quantum well waveguide Fabry–Perot cavity at 1.47 μm wavelength. This operating wavelength is detuned from the band‐edge resonance by 0.07 μm, where an enhanced free‐carrier contribution to the nonlinear refractive index due to 2D confinement of carriers in the quantum wells accounts for the large index variations. The effect of any thermally induced nonlinear response is negligible.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.82.Et Waveguides, couplers, and arrays
78.66.Fd III-V semiconductors

Z‐scan technique using top‐hat beams

W. Zhao and P. Palffy‐Muhoray

Appl. Phys. Lett. 63, 1613 (1993); http://dx.doi.org/10.1063/1.110712 (3 pages) | Cited 70 times

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Top‐hat instead of Gaussian beams are used in Z‐scan experiments to measure nonlinear optical Kerr coefficients of materials. An empirical expression is obtained which allows direct calculation of the Kerr coefficient from measured peak–valley transmittance differences. Predictions of the model are compared with Z‐scan measurement on CS2. Using top‐hat beams, the sensitivity of Z‐scan measurements is a factor of 2.5 greater than for Gaussian beams.  
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42.65.An Optical susceptibility, hyperpolarizability
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
07.60.-j Optical instruments and equipment
42.70.Df Liquid crystals

Unifying explanation for recent temperature sensitivity measurements of Auger recombination effects in strained InGaAs/InGaAsP quantum‐well lasers

Wayne W. Lui, Takayuki Yamanaka, Yuzo Yoshikuni, Shunji Seki, and Kiyoyuki Yokoyama

Appl. Phys. Lett. 63, 1616 (1993); http://dx.doi.org/10.1063/1.110713 (3 pages) | Cited 3 times

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Recent temperature sensitivity measurements of Auger recombination effects in compressively strained quantum‐well structures, which are seemingly inconsistent, are explained in terms of calculation results from a Monte Carlo analysis. In this analysis, realistic valence subband structures obtained using a 4×4 k⋅p method and Fermi–Dirac statistics are employed, where the conduction‐hole‐hole‐splitoff process is also assumed to be the dominant recombination process. It is found that at low carrier density levels and high temperature—often the conditions under which the Auger recombination coefficient is measured—the temperature sensitivity of the Auger recombination coefficient is expected to be low. A qualitative description of this behavior is also given.
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42.55.Px Semiconductor lasers; laser diodes
78.66.Fd III-V semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Effect of electron temperature on negative hydrogen ion production in a low‐pressure Ar discharge plasma with methane

S. Iizuka, T. Koizumi, T. Takada, and N. Sato

Appl. Phys. Lett. 63, 1619 (1993); http://dx.doi.org/10.1063/1.110714 (3 pages) | Cited 10 times

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Production of negative hydrogen ions (H−) is continuously controlled in a low‐pressure Ar discharge plasma with methane by using a pin‐hollow cathode. The electron temperature is changed by varying the pin length. An enhanced production of negative hydrogen ions is observed with a decrease in the electron temperature.
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52.80.-s Electric discharges
52.25.-b Plasma properties
85.40.Hp Lithography, masks and pattern transfer
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Correlation of electrical‐resistivity anomalies and crystal structure in copper‐germanium thin‐film alloys

M. O. Aboelfotoh, H. M. Tawancy, and L. Krusin‐Elbaum

Appl. Phys. Lett. 63, 1622 (1993); http://dx.doi.org/10.1063/1.110715 (3 pages) | Cited 15 times

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We report a nonmonotonic dependence of electrical resistivity on Ge concentration in Cu‐Ge thin‐film alloys containing 0–40 at.% Ge. This behavior is corrected with structural changes occurring in the alloys as the Ge concentration is increased. The resistivity is found to remain remarkably low (typically less than 10 μΩ cm) over a range of Ge concentration extending from 25 to 35 at.%.
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73.61.At Metal and metallic alloys
68.55.-a Thin film structure and morphology

Observation of step bunching on vicinal GaAs(100) studied by scanning tunneling microscopy

K. Hata, A. Kawazu, T. Okano, T. Ueda, and M. Akiyama

Appl. Phys. Lett. 63, 1625 (1993); http://dx.doi.org/10.1063/1.110716 (3 pages) | Cited 19 times

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Similar step bunchings which consist of 7–9 single steps were observed by scanning tunneling microscopy on both vicinal GaAs(100) surfaces grown by metalorganic chemical‐vapor deposition (MOCVD) and annealed in AsH3 atmosphere. Growth parameters, including deposition rate, layer thickness, V/III ratio, and growth temperature, did not affect the morphology of the step bunching. These results indicate that step bunching is induced during the annealing process and its surface morphology is preserved during MOCVD growth for a wide range of growth parameters.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.35.B- Structure of clean surfaces (and surface reconstruction)

Microstructure of epitaxial La0.5Sr0.5CoO3/ferroelectric Pb0.9La0.1 (Zr0.2Ti0.8)0.975O3/La0.5Sr0.5CoO3 heterostructures on LaAlO3

Subodh G. Ghonge, Edward Goo, R. Ramesh, T. Sands, and V. G. Keramidas

Appl. Phys. Lett. 63, 1628 (1993); http://dx.doi.org/10.1063/1.110717 (3 pages) | Cited 33 times

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The microstructure of epitaxial La0.5Sr0.5CoO3(LSCO)/ferroelectric Pb0.9La0.1(Zr0.2Ti0.8)0.975O3/ La0.5Sr0.5CoO3 (LSCO) heterostructures on [001] LaAlO3(LAO) has been investigated by x‐ray diffraction and transmission electron microscopy (TEM). The ferroelectric film which is predominantly c‐axis oriented, with a small degree of a‐axis orientation, is epitaxial with the underlying LSCO and does not show any interfacial reaction. The LSCO film is epitaxial with the LAO substrate. LSCO films shows a doubling of lattice periodicity which is shown to be a TEM specimen preparation artifact.
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68.55.-a Thin film structure and morphology
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Diamond film growth on Ti‐implanted glassy carbon

M. A. Brewer, I. G. Brown, P. J. Evans, and A. Hoffman

Appl. Phys. Lett. 63, 1631 (1993); http://dx.doi.org/10.1063/1.110718 (3 pages) | Cited 8 times

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The growth of diamond thin films on glassy carbon substrates has been investigated as a function of deposition time for different surface treatments. Implantation of Ti to a dose of 1.7×1017 cm−2 and abrasion with diamond powder have both been examined to determine their effect on film nucleation and growth. At the shorter deposition times studied, diamond nucleation was observed on all test samples with those subjected to the abrasive pretreatment exhibiting the higher growth rates. However, the adhesion and uniformity of films on unimplanted glassy carbon were found to deteriorate significantly following deposition runs of 14 and 21 h duration. This was attributed to a destabilization of the underlying surface caused by plasma erosion.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology

Selective epitaxy of GaAs on indium oxide mask followed by in situ removal of the mask

Kazunari Ozasa, Tianchun Ye, and Yoshinobu Aoyagi

Appl. Phys. Lett. 63, 1634 (1993); http://dx.doi.org/10.1063/1.110719 (3 pages) | Cited 3 times

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The selective epitaxy of GaAs has been investigated on indium‐oxide films prepared by vacuum deposition. It was found for the first time that gallium atoms supplied on the indium‐oxide surface were absorbed into the oxide, resulting in the suppression of GaAs deposition on the oxide. The selective epitaxy on a patterned indium‐oxide mask and subsequent in situ removal of the mask by radical hydrogen irradiation have been demonstrated. The investigation shows that indium oxide is a promising mask material for in situ processing since selective epitaxy up to 550 °C and in situ removal of the mask can be achieved on any kind of semiconductor.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
85.40.Hp Lithography, masks and pattern transfer

Formation of amorphous Ge‐S semiconductor alloys by mechanical alloying

T. D. Shen, K. Y. Wang, M. X. Quan, and Z. Q. Hu

Appl. Phys. Lett. 63, 1637 (1993); http://dx.doi.org/10.1063/1.110720 (3 pages) | Cited 2 times

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Amorphous Ge1−xSx(x=0.61, 0.67, and 0.72) semiconductor alloys have been found formed by ball milling of powder mixtures of elemental Ge and S. The amorphization process and the ball‐milled products have been investigated by x‐ray diffraction, transmission electron microscopy, and Raman scattering. The results show that amorphous Ge‐S alloys may form in a self‐heating reaction, driven by the large heat of formation of amorphous and/or liquid Ge‐S alloys. The structure of mechanically alloyed amorphous Ge‐S alloys is similar to but not exactly identical with that of rapidly cooled amorphous Ge‐S alloys. The amorphization transition mechanism reported is believed to be suitable for preparing other amorphous semiconductor alloys with similar thermodynamic conditions.
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81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
72.80.Ng Disordered solids
81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder

Oriented diamond films grown on nickel substrates

W. Zhu, P. C. Yang, and J. T. Glass

Appl. Phys. Lett. 63, 1640 (1993); http://dx.doi.org/10.1063/1.110721 (3 pages) | Cited 48 times

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A previously reported multistep hot filament chemical vapor deposition process for nucleating diamond directly on nickel substrates has been further refined to increase the nucleation density and improve the orientation of diamond films. The process employed heavy seeding of both 〈100〉 and 〈111〉 oriented single crystal Ni surfaces with diamond powders to enhance the nucleation density of diamond films. The deposition conditions were adjusted to allow for 〈100〉 and 〈111〉 orientations to grow on similarly oriented substrates to form nearly complete films with grain boundaries being eliminated. Thus, the technique holds promise for developing heteroepitaxial diamond films for microelectronics applications.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology

Formation of boron nitride and boron carbide composite by nitrogen implantation at elevated temperature

N. Yu, F. Romero‐Borja, Z. H. Zhang, X. T. Cui, J. R. Liu, L. T. Wood, W. K. Chu, D. Marton, J. W. Rabalais, K. M. Forster, and R. R. Reeber

Appl. Phys. Lett. 63, 1643 (1993); http://dx.doi.org/10.1063/1.110722 (3 pages) | Cited 3 times

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Boron carbide (B4C) is a wear resistant material with hardness slightly less than that of diamond. It has an excellent strength to weight ratio and relatively high toughness under controlled processing. These essential mechanical properties make B4C an ideal candidate for cutting tool and bearing applications. We will demonstrate that hexagonal boron nitride (h‐BN), a good solid lubricant, can be formed on B4C surfaces through high temperature (850 °C) nitrogen ion implantation. The formation of composite B4C and h‐BN on the B4C surface can potentially reduce surface friction coefficients, making the material more attractive for tribological applications.
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81.65.-b Surface treatments
61.72.up Other materials
68.35.Dv Composition, segregation; defects and impurities

Charge trapping and device degradation induced by x‐ray irradiation in metal‐oxide‐semiconductor field‐effect transistors

S. A. Campbell, K. H. Lee, H. H. Li, R. Nachman, and F. Cerrina

Appl. Phys. Lett. 63, 1646 (1993); http://dx.doi.org/10.1063/1.110723 (2 pages) | Cited 1 time

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Oxide charge trapping and interface trap generation by hot carrier stress was studied with x‐ray irradiated metal‐oxide‐semiconductor field‐effect transistors. Although the threshold voltage and transconductance recovered after a hydrogen anneal at 450 °C, the irradiated and annealed devices were more susceptible to damage under hot carrier stressing, both at the Si/SiO2 interface and in the oxide bulk. The latent damage was quantified using the various gate voltage hot carrier stresses. It is found that most of the latent damage is related to oxide hole traps and interface traps. Electron trapping is present, but is less significant.
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85.30.Tv Field effect devices
61.80.Cb X-ray effects
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Synthesis and luminescence of silicon remnants formed by truncated glassmelt‐particle reaction

Subhash H. Risbud, Li‐Chi Liu, and James F. Shackelford

Appl. Phys. Lett. 63, 1648 (1993); http://dx.doi.org/10.1063/1.110724 (3 pages) | Cited 16 times

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We have obtained nanometer sized silicon remnants sequestered in glass matrices by terminating the reaction of pure silicon powders dispersed in the viscous melt at a temperature of 1400 °C. Repeated use of this truncated melt‐particle reaction process dilutes the amount and size of silicon remnants, and bulk samples containing nanosize silicon crystallites embedded in a glass matrix were eventually obtained. These quantum dot sized silicon‐in‐glass materials emit greenish luminescence with peak wavelengths from ≊480 to 530 nm, considerably shorter than the reddish luminescence (at about 700–850 nm) observed in porous silicon structures prepared by electrochemical etching techniques; upon complete digestion of Si particles by the melt, the luminescence peaks disappear. Since our silicon‐in‐glass preparation method does not involve etching, the origin of the luminescence is not likely to be due to Si‐O‐H compounds (e.g., siloxene) postulated recently. The location of the luminescence peaks and the observed silicon crystallite size suggest quantum confinement leading to a widened silicon band gap arising from remnants in the glass matrix smaller than the exciton diameter of bulk silicon (10 nm).
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81.05.Pj Glass-based composites, vitroceramics
78.55.Hx Other solid inorganic materials
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Luminescence study on interdiffusion in strained Si1−xGex/Si single quantum wells grown by molecular beam epitaxy

H. Sunamura, S. Fukatsu, N. Usami, and Y. Shiraki

Appl. Phys. Lett. 63, 1651 (1993); http://dx.doi.org/10.1063/1.110725 (3 pages) | Cited 26 times

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Optical investigation of interdiffusion at Si1−xGex/Si heterointerfaces has been performed for the first time in strained Si1−xGex/Si single quantum wells (SQWs). Photoluminescence (PL) peak energy blue shift of up to 22 meV due to interdiffusion‐induced potential profile modulation was observed after annealing in vacuum. The diffusion coefficients obtained were found to closely follow an Arrhenius behavior with an activation energy of 2.47±0.4 eV. Dramatic increase in the integrated PL intensity was observed in the annealed samples, as a result of the elimination of effective nonradiative centers. Strain relaxation was hardly observed even after 900 °C annealing, indicating the unprecedented structural stability of SQWs in contrast to rather vulnerable thick alloy layers. Anomalous peak red shift, probably due to surface oxidation, was observed by annealing in N2 ambient.
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66.30.Ny Chemical interdiffusion; diffusion barriers
68.55.-a Thin film structure and morphology
78.66.Li Other semiconductors

Room‐temperature photoreflectance as an efficient tool for study of the crystalline quality of InAlAs layers grown on InP substrates

S. Monéger, A. Tabata, C. Bru, G. Guillot, A. Georgakilas, K. Zekentes, and G. Halkias

Appl. Phys. Lett. 63, 1654 (1993); http://dx.doi.org/10.1063/1.110726 (3 pages) | Cited 3 times

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Photoreflectance and photoluminescence experiments have been performed on molecular beam epitaxy (MBE) grown InAlAs layers lattice matched to InP substrates in order to evaluate the influence of the growth temperature on the crystalline quality of this material. The study of the photoreflectance broadening parameter at room temperature provides the same indication on crystalline quality as the well‐known linewidth broadening of the photoluminescence at cryogenic temperatures. We show that the best material quality is obtained for the MBE growth temperature of 530 °C.
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68.55.-a Thin film structure and morphology
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors

Electron spin resonance study of the dangling bond in amorphous Si and porous Si

T. J. McMahon and Y. Xiao

Appl. Phys. Lett. 63, 1657 (1993); http://dx.doi.org/10.1063/1.110727 (3 pages) | Cited 8 times

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We compare the electron spin resonance (ESR) signal of the dangling bond in porous silicon (PS) layers, produced by electrochemical etching, to the ESR signal from hydrogenated amorphous Si(a‐Si:H) films. The anisotropy of the ESR signal from PS showed g values varying as for the Pb Si/SiO2 interface dangling bond. The g value varies from g∥=2.0020 to g⊥=2.0080 with an inhomogeneously broadened line width increasing from 1.8 to 3.8 G. An ESR powder line, with superhyperfine and strain broadening intrinsic to PS, has more anisotropy in g∥−g⊥ and less inhomogeneous broadening than does the dangling bond line in a‐Si:H. No evidence was seen for light‐induced metastability on a H‐passivated PS film.
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61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
76.30.Mi Color centers and other defects

Native oxide top‐ and bottom‐confined narrow stripe p‐n AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum well heterostructure laser

S. A. Maranowski, A. R. Sugg, E. I. Chen, and N. Holonyak

Appl. Phys. Lett. 63, 1660 (1993); http://dx.doi.org/10.1063/1.110728 (3 pages) | Cited 75 times

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A new form of AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum well heterostructure (QWH) laser that is confined above and below the active region by an insulating low refractive index native oxide is demonstrated. The laser diodes are defined from a mesa edge by the selective lateral oxidation and anisotropic oxidation of high Al composition AlyGa1−yAs layers (y=0.85, 0.87) located above and below the QW and waveguide active region. This structure provides excellent current and optical confinement, resulting in continuous wave threshold currents of ∼8 mA and maximum output powers (uncoated laser) of 35 mW/ facet for a∼2.5 μm aperture.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Observation of 1.798 μm intersubband transition in InGaAs/AlAs pseudomorphic quantum well heterostructures

Y. Hirayama, J. H. Smet, L. H. Peng, C. G. Fonstad, and E. P. Ippen

Appl. Phys. Lett. 63, 1663 (1993); http://dx.doi.org/10.1063/1.110729 (3 pages) | Cited 21 times

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The well‐width dependence of intersubband transition energies in InGaAs/AlAs pseudomorphic quantum well structures has been studied, and the shortest intersubband wavelength reported to date, 1.798 μm, has been observed for 6 monolayer wells. Both transverse electric and transverse magnetic optical polarizations are absorbed, with an energy splitting of 67 meV between them.
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78.66.Fd III-V semiconductors
78.30.Fs III-V and II-VI semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Demonstration of quantum dots and quantum wires with removable impurities

Y. Feng, A. S. Sachrajda, R. P. Taylor, J. A. Adams, M. Davies, P. Zawadzki, P. T. Coleridge, D. Landheer, P. A. Marshall, and R. Barber

Appl. Phys. Lett. 63, 1666 (1993); http://dx.doi.org/10.1063/1.110731 (3 pages) | Cited 16 times

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We present the first demonstration of a nanostructural device with a central electrode (diameter ≊300 nm) which is contacted independently. This structure is used to create a quantum wire into which an ‘‘impurity’’ of variable size can be introduced. With additional confining gates the structure can also be used to create a quantum dot which can be converted continuously into a quantum ring. Experimental results of magnetoresistance in both low and high magnetic fields are presented which demonstrate the effect of introducing the artificial impurity to a quantum wire.
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72.20.-i Conductivity phenomena in semiconductors and insulators
71.55.-i Impurity and defect levels
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