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27 Sep 1993

Volume 63, Issue 13, pp. 1715-1856

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Wavelength dependence of saturation and thermal effects in multiple quantum well modulators

G. D. Boyd, J. A. Cavaillès, L. M. F. Chirovsky, and D. A. B. Miller

Appl. Phys. Lett. 63, 1715 (1993); http://dx.doi.org/10.1063/1.110692 (3 pages) | Cited 5 times

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Experiments are described in biased AlGaAs/GaAs quantum well reflection modulators demonstrating that the degradation in continuous wave modulator performance due to absorption saturation at wavelengths λ≳λ0, is significantly reduced compared to that at λ0, the zero field exciton wavelength, which in this case is 850 nm. This is of importance in the selection of operating wavelengths for the self‐electro‐optic effect device (SEED) used in photonic switching or optical interconnect applications.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
78.66.Fd III-V semiconductors
42.79.Hp Optical processors, correlators, and modulators
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

High power AlGaAs quantum well laser diodes prepared by molecular beam epitaxy

T. Hayakawa, K. Matsumoto, M. Morishima, M. Nagai, H. Horie, Y. Ishigame, A. Isoyama, and Y. Niwata

Appl. Phys. Lett. 63, 1718 (1993); http://dx.doi.org/10.1063/1.110693 (3 pages) | Cited 1 time

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Stable and reliable AlGaAs high power single quantum well lasers prepared by molecular beam epitaxy have been realized. We have prepared both 50‐μm devices operating in multiple modes and ridge‐waveguide single transverse‐mode devices. Good reliability has been confirmed under the operating condition of 500 mW at 50 °C for the former type of devices and under the condition of 50 mW at 50 °C for the latter type of devices over 1000 h. These results indicate that molecular beam epitaxy is capable of making reliable high power laser diodes.
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42.55.Px Semiconductor lasers; laser diodes
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
42.60.-v Laser optical systems: design and operation

Analytical results of the switch on statistics in distributed feedback laser diodes by short triangular pulses

Salvador Balle, Claudio R. Mirasso, Adalberto Sapia, and Paolo Spano

Appl. Phys. Lett. 63, 1721 (1993); http://dx.doi.org/10.1063/1.110694 (3 pages) | Cited 3 times

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The results of a theoretical analysis of the first passage time statistics in single mode diode lasers are reported. A fast triangular current pulse is used to drive a semiconductor laser in order to approximate working conditions close to those obtained when the transmission rate is limited by the parasitics of the driving circuit. The results show a very good agreement with numerical simulations of the nonlinear evolution of the dynamical system demonstrating the accuracy of the approximations involved in our theory.
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42.60.Mi Dynamical laser instabilities; noisy laser behavior
42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes

Scanning electro‐optical and pyroelectrical microscopy for the investigation of polarization patterns in poled polymers

Ş. Yilmaz, S. Bauer, W. Wirges, and R. Gerhard‐Multhaupt

Appl. Phys. Lett. 63, 1724 (1993); http://dx.doi.org/10.1063/1.110695 (3 pages) | Cited 18 times

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Compact and simple experimental setups for scanning pyroelectrical and electro‐optical microscopy are introduced. Their feasibility is demonstrated with scans of periodically poled layers of a nonlinear optical side‐chain polymer. While the scanning pyroelectrical microscope has a less complex design and is easier to use, the scanning electro‐optical microscope exhibits better spatial resolution and higher contrast. Both tools will be essential for optimizing the patterned poling of nonlinear optical waveguides, modulators, and sensors.
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78.66.Qn Polymers; organic compounds
77.84.Jd Polymers; organic compounds
77.80.Dj Domain structure; hysteresis
42.70.Jk Polymers and organics

Ultraviolet laser fabrication of ultrastrong optical fiber gratings and of germania‐doped channel waveguides

Victor Mizrahi, Paul J. Lemaire, Turan Erdogan, W. A. Reed, David J. DiGiovanni, and Robert M. Atkins

Appl. Phys. Lett. 63, 1727 (1993); http://dx.doi.org/10.1063/1.110696 (3 pages) | Cited 43 times

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We report the fabrication of low loss (<0.2 dB) fiber Bragg gratings of 10 nm reflection bandwidth, and of 19 nm bandwidth lossy gratings. With this technology we also demonstrate the direct writing of channel waveguides in commercial germania‐doped wafers without the use of photoresist and etching.
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42.82.Cr Fabrication techniques; lithography, pattern transfer
42.81.-i Fiber optics
42.79.Dj Gratings
42.70.Ce Glasses, quartz

Birefringent bistability in (Pb,La)(Zr,Ti)O3 thin films with a ferroelectric‐semiconductor interface

Feiling Wang and Gene H. Haertling

Appl. Phys. Lett. 63, 1730 (1993); http://dx.doi.org/10.1063/1.110697 (3 pages) | Cited 16 times

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We report a birefringent bistability exhibited in ferroelectric thin films with a ferroelectric‐semiconductor interface. Such birefringent bistability is observed in (Pb,La)(Zr,Ti)O3 (PLZT) thin films which are sandwiched between a platinum and a semiconducting indium‐tin oxide (ITO) electrode. The magnitude of the birefringence between the two remanent states is approximately 0.9×10−3. The Pt/PLZT/ITO structure features a nonvolatile electro‐optic memory operation, i.e., the switching between the two remanent birefringent states with bipolar electric pulses.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
77.80.Fm Switching phenomena
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
42.79.Vb Optical storage systems, optical disks

Ion‐ripple wiggler for short wavelength lasers

H. Kupershmidt and Amiram Ron

Appl. Phys. Lett. 63, 1733 (1993); http://dx.doi.org/10.1063/1.110698 (3 pages) | Cited 2 times

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We propose a new scheme for creating a dynamic wiggler of ion density grating. This can be incorporated into an ion‐ripple laser to generate pulses of tunable coherent radiation of very short wavelengths. Two optical waves interfere in a plasma, and produce a density grating of wavelength ∼1–10 μm. An electron beam, obliquely injected into the plasma, expels the plasma electrons along its path, and generates radiation by interacting with the ion‐ripple wiggler left behind.
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52.35.Fp Electrostatic waves and oscillations (e.g., ion-acoustic waves)
52.40.Mj Particle beam interactions in plasmas
52.59.Px Hard X-ray sources
41.60.Cr Free-electron lasers

One‐step‐metalorganic‐vapor‐phase‐epitaxy‐grown AlGaInP visible laser using simultaneous impurity doping

C. Anayama, H. Sekiguchi, M. Kondo, H. Sudo, T. Fukushima, A. Furuya, and T. Tanahashi

Appl. Phys. Lett. 63, 1736 (1993); http://dx.doi.org/10.1063/1.110699 (3 pages) | Cited 9 times

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We fabricated a GaInP/AlGaInP visible laser with a real‐index guide structure by one‐step metalorganic vapor phase epitaxy using simultaneous impurity doping. We achieved an effective self‐aligned current‐confinement structure in the AlGaInP cladding layer and a threshold current of only 18 mA. The laser had stable transverse‐mode oscillation with a beam astigmatism less than 1 μm.  
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Broadband, intensity dependent absorption in tetravalent chromium‐doped crystals

Egberto Munin, A. Balbin Villaverde, X. X. Zhang, and Michael Bass

Appl. Phys. Lett. 63, 1739 (1993); http://dx.doi.org/10.1063/1.110700 (3 pages) | Cited 13 times

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Cr4+‐doped Y2SiO5 and Ca2Al2SiO7 have been investigated as broadband, solid state saturable absorbers. Saturation properties in the near infrared as well as a demonstration of tunable, passive Q switching of a flash‐lamp pumped Cr:LiSAF laser are discussed.
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78.30.Hv Other nonmetallic inorganics
78.40.Ha Other nonmetallic inorganics
42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers

Generation of femtosecond optical pulses with nanojoule energy from a diode laser and fiber based system

A. Galvanauskas, P. Blixt, and J. A. Tellefsen

Appl. Phys. Lett. 63, 1742 (1993); http://dx.doi.org/10.1063/1.110701 (3 pages) | Cited 3 times

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Linearly chirped, subnanosecond optical pulses, emitted at an arbitrary repetition rate by a fast‐tuned monolithic diode laser, were compressed down to 600 fs by group‐velocity dispersion in a standard optical fiber. Subsequent amplification and nonlinear compression in an erbium‐doped fiber amplifier produced pulses with the energy of up to 2 nJ and the duration down to 230 fs.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.82.Fv Hybrid systems
42.81.-i Fiber optics

Self‐pumped phase conjugation with a new mechanism in KTa1−xNbxO3:Fe crystals

Yingwu Lian, Hong Gao, Peixian Ye, Qingcai Guan, and Jiyang Wang

Appl. Phys. Lett. 63, 1745 (1993); http://dx.doi.org/10.1063/1.110807 (3 pages) | Cited 13 times

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A new model is proposed to explain the origin of the self‐pumped phase conjugation (SPPC) that we have observed in KTa1−xNbxO3:Fe crystals. In this model SPPC is generated by both four‐wave mixing and backscattering processes rather than by only one of them. The advantage of this kind of phase conjugator is also discussed.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Potential structure in silane radio‐frequency discharge containing particles

Yoshihiro Okuno, Hiroharu Fujita, Masaharu Shiratani, and Yukio Watanabe

Appl. Phys. Lett. 63, 1748 (1993); http://dx.doi.org/10.1063/1.110702 (3 pages) | Cited 5 times

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Potential structures are clarified experimentally with an emissive probe in silane‐helium radio‐frequency (rf) discharges containing particles. The results reveal, compared with a pure helium rf discharge, that both the crest and trough instantaneous plasma potentials in an rf oscillation shift toward the negative side, especially in the particle localized region near the plasma‐sheath boundary. The absolute value of the self‐bias potential of the powered electrode is reduced. A considerable electric field exists even in the bulk plasma region and the strength increases with the concentration ratio of silane to helium.
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52.80.Pi High-frequency and RF discharges

Substrate temperature and collimator aspect ratio effects in titanium sputtering

S. Meikle and S. Kim

Appl. Phys. Lett. 63, 1751 (1993); http://dx.doi.org/10.1063/1.110703 (3 pages) | Cited 1 time

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We investigated the relationship of substrate temperature and collimator aspect ratio to sputtered titanium thin‐film properties. Titanium films were deposited in a configuration with a collimating mesh between the target and substrate over collimator aspect ratios of 0.7–2.0 and substrate temperature ranges of 150–450 °C, respectively. We found that a morphology transition occurs with rising deposition temperature and falling collimator aspect ratio where film stress switches from compressive to tensile, roughness increases 50%, grain size doubles, and resistivity increases 20%. We propose that the transition phenomenon is based on a film growth mechanism where substrate heating and surface bombardment have competing effects on the formation of surface clusters.
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81.15.Cd Deposition by sputtering
68.55.-a Thin film structure and morphology

Investigation of the growth kinetics of low pressure diamond films by in situ elastic scattering of light and reflectivity

A. M. Bonnot, B. S. Mathis, and S. Moulin

Appl. Phys. Lett. 63, 1754 (1993); http://dx.doi.org/10.1063/1.110704 (3 pages) | Cited 20 times

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A detailed analysis of in situ optical measurements of elastic scattering of light and reflectivity during diamond film synthesis is presented. From the results we propose a growth kinetic model for the very first stages when isolated tiny particles are formed and until they coalesce to form a continuous diamond film.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
78.66.Db Elemental semiconductors and insulators

Low pressure photodeposition of silicon nitride films using a xenon excimer lamp

P. Bergonzo and Ian W. Boyd

Appl. Phys. Lett. 63, 1757 (1993); http://dx.doi.org/10.1063/1.110705 (3 pages) | Cited 21 times

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Excimer lamps have recently opened up the field of intense vacuum ultraviolet light generation. The power available from such lamps based on the dielectric barrier discharge generation method can be superior to those of typical low pressure mercury lamps. Additionally, a wide range of shorter and longer wavelengths can be generated as required. Following previous work on silicon dioxide deposition, here we present the use of these lamps for direct photodeposition of silicon nitride from mixtures of silane and ammonia. Optical and physical characterization reveal good film qualities, rendering this new technique promising for low temperature semiconductor and optoelectronic material processing.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.50.Bc Processes caused by infrared radiation
82.50.Hp Processes caused by visible and UV light

Transient effects of tin oxide CO sensors in the presence of water vapor

D. S. Vlachos, P. D. Skafidas, and J. N. Avaritsiotis

Appl. Phys. Lett. 63, 1760 (1993); http://dx.doi.org/10.1063/1.110706 (2 pages) | Cited 7 times

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During the experimental study of CO sensitivity of SnO2 resistive‐type gas sensors in the presence of water vapor, a transient effect was observed which elucidates the CO sensing mechanism in tin oxide. More precisely, after the removal of CO, an increase of the measured conductance was observed, depending on substrate temperature. An explanation of this phenomenon is proposed, which is based on the conductance modulation due to three different mechanisms: Formate desorption, occupation of lattice sites by oxygen molecules, and diffusion of lattice oxygen vacancies to sensor’s bulk.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
72.80.-r Conductivity of specific materials
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Mechanical fatigue monitoring using absorption spectroscopy of infrared fibers

N. Barkay and A. Katzir

Appl. Phys. Lett. 63, 1762 (1993); http://dx.doi.org/10.1063/1.110707 (3 pages)

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The spectral transmittance of infrared fibers was measured while they were undergoing flexing procedures leading to mechanical fatigue. Microscopic mechanical defects were detected through their influence on the optical losses, without interfering with the deformation. Such experiments were successfully carried out on infrared transmitting silver‐halide polycrystalline fibers. The spectral characterization provides a probe of the defects, as their effect is related to the ratio between defect size and wavelength. The method discussed here may be used to examine theoretical models concerning the dynamics of mechanical defects and optical guiding in fibers with defects.
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42.81.Cn Fiber testing and measurement of fiber parameters
62.20.M- Structural failure of materials
42.70.Km Infrared transmitting materials
78.30.Hv Other nonmetallic inorganics

Epitaxial growth of BaMgF4 films on Si(100) and (111) substrates: An approach to ferroelectric/semiconductor heterostructures

Kouji Aizawa, Hiroshi Ishiwara, and Masao Kumagai

Appl. Phys. Lett. 63, 1765 (1993); http://dx.doi.org/10.1063/1.110681 (3 pages) | Cited 10 times

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Growth of BaMgF4 films on both Si(100) and (111) substrates has been attempted using molecular beam epitaxy. (011)‐ and (120)‐oriented epitaxial films are successfully grown at temperatures ∼500 °C on Si(100) and (111) substrates, respectively. It has been found that the best channeling minimum yield in Rutherford backscattering spectrometry is about 0.55 for a BaMgF4(120) film on Si(111), and that the films are composed of crystallites whose orientations reflect the substrate symmetry.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.

Influence of temperature on photocurrent of Al/chlorophyll a/Ag cells

S. Boussaad, S. Hotchandani, and R. M. Leblanc

Appl. Phys. Lett. 63, 1768 (1993); http://dx.doi.org/10.1063/1.110682 (3 pages) | Cited 8 times

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The temperature‐dependent study of photocurrent of Al/chloropyll a/Ag cells has been carried out. The results show that the photocurrent (Iph), unlike dark current, shows an unusual behavior in that it increases as the temperature decreases. The striking feature is that Iph passes through a maximum and then decreases as the temperature is further decreased or increased. This is interpreted in terms of different efficiency of exciton dissociation into free charges at negatively charged traps associated with changes in microcrystalline structure of chlorophyll a with temperature.
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73.50.Pz Photoconduction and photovoltaic effects
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.40.Sx Metal-semiconductor-metal structures
71.55.Ht Other nonmetals

On the structure of thin hydrocarbon films

W. Jacob and W. Möller

Appl. Phys. Lett. 63, 1771 (1993); http://dx.doi.org/10.1063/1.110683 (3 pages) | Cited 65 times

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We compare reported compositions of a‐C:H films in a ternary phase diagram. It is assumed that the films comprised three phases: sp3 hybridized carbon, sp2 hybridized carbon and hydrogen. The data are found to split into two well‐separated groups. This separation depends on the method used to measure the sp3/sp2 ratio. We conclude from the comparison of NMR and infrared data that infrared analysis does not provide a quantitative measure of the sp3/sp2 ratio.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.43.Dq Amorphous semiconductors, metals, and alloys

Surface topography and ordering‐variant segregation in GaInP2

D. J. Friedman, Jane G. Zhu, A. E. Kibbler, J. M. Olson, and J. Moreland

Appl. Phys. Lett. 63, 1774 (1993); http://dx.doi.org/10.1063/1.110658 (3 pages) | Cited 20 times

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Using transmission electron diffraction dark‐field imaging, atomic force microscopy (AFM), and Nomarski microscopy, we demonstrate a direct connection between surface topography and cation site ordering in GaInP2. We study epilayers grown by organometallic vapor‐phase epitaxy on GaAs substrates oriented 2° off (100) towards (110). Nomarski microscopy shows that, as growth proceeds, the surface of ordered material forms faceted structures aligned roughly along [011]. A comparison with the dark‐field demonstrates that the [111] and [111] ordering variants are segregated into complementary regions corresponding to opposite‐facing facets of the surface structures. This observation cannot be rationalized with the obvious but naive model of the surface topography as being due to faceting into low‐index planes. However, AFM reveals that the facets are in fact not low‐index planes, but rather are tilted 4° from (100) towards (111)B. This observation explains the segregation of the variants: the surface facets act as local (111)B‐misoriented growth surfaces which select only one of the two variants.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
61.05.J- Electron diffraction and scattering
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy

Photovoltaic effect and its polarity in Si doping superlattices

C. P. Luo, D. S. Jiang, W. H. Zhuang, F. Li, and Y. Z. Li

Appl. Phys. Lett. 63, 1777 (1993); http://dx.doi.org/10.1063/1.110659 (3 pages)

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We have studied the photovoltaic effects in Si doping superlattices (nipi) under different excitation conditions with and without additional cw optical biasing using a He‐Ne laser. On the basis of the photovoltaic theory of carrier spatial separation in superlattices, we propose the concept of spatial fixity of the photovoltage polarity in type‐II superlattices and examine the experimental results. The photovoltaic effect in Si nipi is found mainly from the direct transitions related with shallow impurities in real space, not the electron‐hole band‐to‐band process as in GaAs nipi.
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73.50.Pz Photoconduction and photovoltaic effects
78.66.Db Elemental semiconductors and insulators
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors

Formation of four new shallow emissions in Mn+ ion‐implanted GaAs grown by molecular beam epitaxy having extremely low concentration of background impurities

Honglie Shen, Yunosuke Makita, Shigeru Niki, Akimasa Yamada, Tsutomu Iida, Hajime Shibata, Akira Obara, and Shin‐ichiro Uekusa

Appl. Phys. Lett. 63, 1780 (1993); http://dx.doi.org/10.1063/1.110660 (3 pages) | Cited 12 times

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Mn+ ions were implanted into ultrapure GaAs layers grown by molecular beam epitaxy. 2 K photoluminescence revealed that in addition to the well‐established Mn‐related deep acceptor emission at ∼1.41 eV, four new shallow emissions denoted by (Mn°, X), ‘‘G’’, ‘‘H’’, and (D, A)2 are formed in the near band edge when the Mn concentration [Mn] exceeds 3×1016 cm−3. Both ‘‘G’’ and ‘‘H’’ exhibit no energy shift with growing [Mn] up to 1×1019 cm−3. In contrast, for shallow acceptor‐ (such as C) doped GaAs with extremely low background concentrations of donor impurities, a series of [g‐g]‐like energy levels, which present strong energy shifting with increasing acceptor concentration, are universally formed. These results show that pairs between deep Mn acceptors do not produce such [g‐g] like energy levels.
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71.55.Eq III-V semiconductors
61.72.uj III-V and II-VI semiconductors
78.55.Cr III-V semiconductors

Traps for excitons and interstitial atoms in edge‐defined film‐fed growth silicon

Gordon Davies, Seung‐Chul Park, V. Higgs, and William D. Sawyer

Appl. Phys. Lett. 63, 1783 (1993); http://dx.doi.org/10.1063/1.110661 (3 pages) | Cited 5 times

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We show from the power dependence of photoluminescence of as‐grown edge‐defined film‐fed film‐grown silicon (EFG Si) that there are few additional nonradiative traps for excitons in EFG Si relative to electronic grade silicon. The first application of cathodoluminescence topography to EFG Si reveals only a small (10%) decrease in the luminescence at grain boundaries from radiation‐damage centers at grain boundaries. A radiation‐damage complex formed by migration of an interstitial carbon atom is shown to be created, and also destroyed, at rates very similar to those in electronic grade silicon, indicating the absence of interstitial traps specific to EFG Si.
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81.10.Fq Growth from melts; zone melting and refining
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
78.55.Hx Other solid inorganic materials
71.55.Cn Elemental semiconductors

Quasi‐one‐dimensional electron gas and its magnetic depopulation in a quantum wire prepared by overgrowth on a cleaved edge of AlGaAs/GaAs multiple quantum wells

J. Motohisa and H. Sakaki

Appl. Phys. Lett. 63, 1786 (1993); http://dx.doi.org/10.1063/1.110662 (3 pages) | Cited 12 times

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We have succeeded in the formation of a quasi‐one‐dimensional electron gas on an edge surface of an AlGaAs/GaAs multiple quantum well (MQW) structure with well width of 100 nm. The sample was prepared by the exposure of a cleaved surface of an MQW substrate and subsequent overgrowth of a doped AlGaAs layer on the edge. The existence of electrons on the edge surface and their one dimensionality are, respectively, evidenced by the angular dependence of magnetoresistance and the magnetic depopulation effect.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
72.20.My Galvanomagnetic and other magnetotransport effects
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
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