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4 Oct 1993

Volume 63, Issue 14, pp. 1865-2004

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Properties of ZnS thin films prepared by 248‐nm pulsed laser deposition

M. McLaughlin, H. F. Sakeek, P. Maguire, W. G. Graham, J. Molloy, T. Morrow, S. Laverty, and J. Anderson

Appl. Phys. Lett. 63, 1865 (1993); http://dx.doi.org/10.1063/1.110656 (3 pages) | Cited 25 times

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Pulsed laser deposition (PLD) from a hot pressed manganese doped ZnS target using a KrF laser, has produced a high rate deposition method for growing luminescent thin films. Good stoichiometric quality and typical luminescent crystal structures have been observed with a predominant hexagonal phase and little evidence of the cubic phase. The luminescent characteristics were determined by cathodoluminescence and photoluminescence excitation and stable electroluminescence was observed under pulsed dc conditions with a minimum brightness of 150 cd/m2. PLD film characteristics are compared with those observed in radio‐frequency sputtered samples.
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81.15.Fg Pulsed laser ablation deposition
78.55.Et II-VI semiconductors
78.60.-b Other luminescence and radiative recombination

Fiber optic sensor for chlorinated hydrocarbons in water based on infrared fibers and tunable diode lasers

R. Krska, R. Kellner, U. Schiessl, M. Tacke, and A. Katzir

Appl. Phys. Lett. 63, 1868 (1993); http://dx.doi.org/10.1063/1.110657 (3 pages) | Cited 23 times

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A novel fiber optic evanescent wave spectroscopy (FEWS) system is based on a tunable diode laser (TDL) source, on a polymer‐coated AgClBr infrared transmitting fiber, and on a mercury cadmium telluride detector. This system was used for sensing low levels of chlorinated hydrocarbons in water. The detection limit was 100 μg/l (100 ppb), which is an improvement by a factor of 50 in comparison to a similar system that is based on a Fourier transform infrared spectrometer, and the measurement time was reduced by a factor of 3. The TDL‐FEWS system shows significant potential for in situ monitoring of ground water.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
42.81.Pa Sensors, gyros
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)

Observation of spectral narrowing and emission energy shift in organic electroluminescent diode utilizing 8‐hydroxyquinoline aluminum/aromatic diamine multilayer structure

Yutaka Ohmori, Akihiko Fujii, Masao Uchida, Chikayoshi Morishima, and Katsumi Yoshino

Appl. Phys. Lett. 63, 1871 (1993); http://dx.doi.org/10.1063/1.110632 (3 pages) | Cited 37 times

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Organic electroluminescent (EL) diode with a multilayer structure which consists of alternating layers of organic 8‐hydroxyquinoline aluminum (Alq3) and aromatic diamine has been grown by organic molecular beam deposition. The EL emission from the multilayer structure shows spectral narrowing and the emission energy has been observed to shift to higher energy compared with that in the monolayer structure. Mechanism of spectral narrowing and the emission energy shift in the diode with the multilayer structure have been discussed.  
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78.60.Fi Electroluminescence
78.66.Qn Polymers; organic compounds
85.60.Jb Light-emitting devices

Monte Carlo studies on the well‐width dependence of carrier capture time in graded‐index separate confinement heterostructure quantum well laser structures

Yeeloy Lam and Jasprit Singh

Appl. Phys. Lett. 63, 1874 (1993); http://dx.doi.org/10.1063/1.110633 (3 pages) | Cited 14 times

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The total carrier capture time and the quantum well width are both important parameters affecting the graded‐index separate confinement heterostructure (GRINSCH) quantum well laser modulation speed limit. However, discrepancies exist in the literature on the well‐width dependence of the carrier capture times. To study this phenomenon, we have developed a Monte Carlo technique to simulate carrier relaxation in GRINSCH quantum well structures. Our results show that the carrier capture time increases with the density of carrier injection. Furthermore, depending on the concentration of injected carriers, the capture time will either decrease, remain the same, or increase with increases in the well width. At lasing conditions, the times are more or less independent of the well width up to 100 Å. We compare our calculations to published experiments and find good agreements.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Generation of a violet phase‐matched second‐harmonic wave with a new organic single crystal, 8‐(4′‐acetylphenyl)‐1,4‐dioxa‐8‐azaspiro[4.5] decane

M. Sagawa, H. Kagawa, A. Kakuta, and M. Kaji

Appl. Phys. Lett. 63, 1877 (1993); http://dx.doi.org/10.1063/1.110634 (3 pages) | Cited 8 times

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A new organic nonlinear optical material, 8‐(4′‐acetylphenyl)‐1, 4‐dioxa‐8‐azaspiro[4.5]decane (APDA) was synthesized. Under collinear type I phase‐matching conditions, second‐harmonic beams in a 380–450 nm wavelength region were obtained from a Ti‐sapphire laser pumping with the single crystal. Nonlinear optical properties and sample preparation of the single crystal are reported.    
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Jk Polymers and organics
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Optical limiter using a lead phthalocyanine

James S. Shirk, Richard G. S. Pong, F. J. Bartoli, and Arthur W. Snow

Appl. Phys. Lett. 63, 1880 (1993); http://dx.doi.org/10.1063/1.110635 (3 pages) | Cited 81 times

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The performance of an optical limiter based on Pb‐tetrakis(cumylphenoxy)phthalocyanine, a robust organic material with a large χ(3) and figure of merit, χ(3)/α0, is described. In an f/5 limiter with a sample transmission of 0.68, the threshold for limiting was 8±2 nJ and the dynamic range was greater than a factor of 103. The threshold for the PbPc(CP)4 limiter was ∼15 times smaller and the high intensity transmission ∼4–5 times lower than an equivalent limiter based on a thermal nonlinearity.
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42.79.-e Optical elements, devices, and systems
42.65.-k Nonlinear optics
42.70.Jk Polymers and organics

1‐to‐12 surface normal three‐dimensional optical interconnects

Ray T. Chen, Suning Tang, Maggie M. Li, David Gerald, and Srikanth Natarajan

Appl. Phys. Lett. 63, 1883 (1993); http://dx.doi.org/10.1063/1.110636 (3 pages) | Cited 11 times

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We present a surface normal optical interconnect with a 1‐to‐12 collinear fan‐out. Two types of polymer‐based holograms were fabricated to provide a collinear 1‐to‐12 fan‐out from guided mode to substrate modes and twelve 1‐to‐1 surface normal interconnects. Fluctuation of up to 7.2 dB for the 1‐to‐12 fan‐out hologram was observed due to the oscillating and the film saturation effects of the transmission hologram. Diffraction efficiency better than 70% was observed for all the total internal reflection holograms. The result reported herein greatly enhanced optical signal processing capability of guided wave optical interconnects. The advantages of free space optical interconnect, such as global interconnect, three dimension, massive fan‐out/fan‐in capabilities, and surface normal optical interconnect, can be realized using the demonstrated architecture. The coupling from waveguide to fiber can be realized from the surface rather than the edge of a photonic integrated circuit.
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42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.82.Ds Interconnects, including holographic interconnects

Elimination of light scattering from grating irregularities by using a quantum well grating in index or gain‐coupled distributed feedback lasers

S. N. G. Chu, W. T. Tsang, F. S. Choa, R. A. Logan, E. J. Flynn, and D. L. Coblentz

Appl. Phys. Lett. 63, 1886 (1993); http://dx.doi.org/10.1063/1.110637 (3 pages) | Cited 4 times

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Grating irregularities in distributed feedback (DFB) laser structures form strong light scattering centers during lasing operation. The existence of such scattering centers may possibly affect the laser reliability. We report an elimination of the light scattering centers in index or gain‐coupled DFB lasers using a quantum well (QW) grating under the active laser stripe. The improved grating quality is a result of an inherent uniformity of the QW grating amplitude determined by a precharacterized QW structure as well as an improved crystalline perfection of the overgrown InP instead of a quaternary waveguide layer in a regular substrate grating structure.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Laser annealing of SrTiO3 thin films deposited directly on Si substrates at low temperature

Seigen Otani, Mami Kimura, and Nobuo Sasaki

Appl. Phys. Lett. 63, 1889 (1993); http://dx.doi.org/10.1063/1.110638 (3 pages) | Cited 17 times

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SrTiO3 films sputter deposited directly on a Si substrate at 200 °C were annealed at a scanning cw Ar laser beam at a substrate temperature of 200 °C. The laser annealing improved the crystallinity of the SrTiO3 films and minimized the formation of a SiO2 layer between SrTiO3 and Si. These results are confirmed by x‐ray diffraction analysis and secondary ion mass spectrometry. The dielectric constant of the SrTiO3 films increased monotonically with laser power up to 1.2 W. The dielectric constant was improved from the as‐grown value of 26–118 for a 160‐nm‐thick SrTiO3 film annealed at a 1.2 W laser power. At 1.0 W laser power, the annealed dielectric constant varied from 55 to 101 with increasing film thickness from 110 to 380 nm. From the film thickness dependence constant, it is shown that the intrinsic dielectric constant for the SrTiO3 films is about 150.
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77.55.-g Dielectric thin films
81.15.Cd Deposition by sputtering
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Behavior of an ideal injecting contact on a trap‐free polymer

M. Abkowitz, J. S. Facci, and M. Stolka

Appl. Phys. Lett. 63, 1892 (1993); http://dx.doi.org/10.1063/1.110639 (3 pages) | Cited 30 times

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Solution coatable insulators capable of unipolar photoinjected carrier transport with negligible loss of transiting charge to deep traps are required for the fabrication of organic electrophotographic receptors. Molecularly designed polymeric insulators with these characteristics can now be routinely synthesized. Such trap‐free polymer films provide a unique venue for the study of contact and interface behavior. A test for distinguishing ohmic from emission limited contact behavior which exploits the availability of these polymers is described. The test involves direct comparison of dark injection transients excited by application of a voltage step to the contact under investigation, with small signal time‐of‐flight transients photoexcited by laser pulse irradiation through a semitransparent blocking contact on the opposite face of the same specimen film.
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73.40.Ns Metal-nonmetal contacts
73.61.Ph Polymers; organic compounds

Thresholds for dielectric breakdown in laser‐irradiated diamond

Claude A. Klein and Richard DeSalvo

Appl. Phys. Lett. 63, 1895 (1993); http://dx.doi.org/10.1063/1.110640 (3 pages) | Cited 8 times

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We report on picosecond laser‐induced damage experiments that were carried out on a natural type‐IIa diamond and a thick specimen of high‐quality chemically vapor‐deposited (CVD) diamond. In conjunction with earlier measurements performed elsewhere on an ‘‘optically thick’’ single crystal, it is shown that for spot sizes (2ω) ranging from 3 to 60 μm, the breakdown field strength (EBD) at the damage threshold of diamond obeys a pattern best described as follows: EBD≂A/√2ω, where A=30.7 and 38.7 MVμ1/2/cm at 532 and 1064 nm, respectively. The case of CVD diamond demonstrates that if problems arising from localized high absorption at the deposition surface can be avoided, this material should be of much promise for contemplated high‐power free‐electron laser window applications.
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Growth and ferroelectric properties of Bi2VO5.5 thin films with metallic LaNiO3 electrodes

K. V. R. Prasad, K. B. R. Varma, A. R. Raju, K. M. Satyalakshmi, R. M. Mallya, and M. S. Hegde

Appl. Phys. Lett. 63, 1898 (1993); http://dx.doi.org/10.1063/1.110641 (3 pages) | Cited 33 times

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Novel ferroelectric bismuth vanadate, Bi2VO5.5 (BVO), thin films have been grown between lattice matched metallic LaNiO3 (LNO) layers deposited on SrTiO3 (STO) by the pulsed laser deposition technique. LNO/BVO/LNO/STO and Au/BVO/LNO/STO trilayer structures exhibited c‐oriented (001) growth of BVO. LNO has been found to be a good metallic electrode with sheet resistance ∼20 Ω in addition to aiding c‐axis oriented BVO growth. The dielectric constant, ϵr of LNO/BVO/LNO/STO, at 300 K was about 12. However, when an Au electrode was used on top of BVO/LNO/STO film, it showed a significant improvement in the dielectric constant (ϵr=123). The ferroelectric properties of BVO thin films have been confirmed by hysteresis behavior with a remnant polarization, Pr=4.6×10−8 C/cm2 and coercive field, Ec=23 kV/cm at 300 K.
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81.15.Fg Pulsed laser ablation deposition
68.55.-a Thin film structure and morphology
77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity

Effects of electron beam during ion implantation and ion beam assisted deposition

Xianghong Liu and Tengcai Ma

Appl. Phys. Lett. 63, 1901 (1993); http://dx.doi.org/10.1063/1.110642 (2 pages) | Cited 1 time

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This letter investigates the effects of a continuous electron beam with certain area and low energy density during ion implantation and ion beam assisted deposition (IAD). It is found that electron beams with certain energy can make the implantation range deeper and the combination of the deposition thin film and the substrate stronger. However, it is also found that they make the surface microhardness decrease.
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61.72.up Other materials
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
61.80.Fe Electron and positron radiation effects
61.80.Jh Ion radiation effects

Multiresonance tunneling effect in double‐well potentials

D. Khuat‐duy and P. Leboeuf

Appl. Phys. Lett. 63, 1903 (1993); http://dx.doi.org/10.1063/1.110643 (3 pages) | Cited 4 times

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We prove that one‐dimensional asymmetric double‐well potentials of degree four have the property that, at a fixed energy, the classical period is the same in both wells. Quantum mechanically this reflects in a simultaneous occurrence, or alignment, of the spectral quasidegeneracies at certain values of the parameters controlling the shape of the potential. Experimental applications of this property, like multiresonance tunneling effect, are discussed.
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73.40.Gk Tunneling
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

18O diffusion through amorphous SiO2 and cristobalite

J. Rodríguez‐Viejo, F. Sibieude, M. T. Clavaguera‐Mora, and C. Monty

Appl. Phys. Lett. 63, 1906 (1993); http://dx.doi.org/10.1063/1.110644 (3 pages) | Cited 16 times

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Secondary ion mass spectrometry was used to profile the diffusion of oxygen in polycrystalline β‐cristobalite and vitreous SiO2. The tracer concentration profiles of cristobalite are consistent with a model based on two mechanisms: bulk and short‐circuit diffusion. The profiles of partially crystallized samples containing vitreous SiO2 and β‐cristobalite were fitted using the sum of two complementary error functions and taking account of some interstitial‐network exchange. The bulk oxygen diffusivity, in the temperature range 1240–1500 °C, is about five times greater for vitreous silica than for β‐cristobalite.
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66.30.J- Diffusion of impurities
61.72.S- Impurities in crystals

Phonon‐electron interactions in the two‐dimensional electron gas in InGaAs‐InAlAs modulation‐doped field‐effect transistor structures studied by Raman scattering

J. E. Maslar, J. F. Dorsten, P. W. Bohn, S. Agarwala, I. Adesida, C. Caneau, and R. Bhat

Appl. Phys. Lett. 63, 1909 (1993); http://dx.doi.org/10.1063/1.110645 (3 pages) | Cited 7 times

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Raman scattering by coupled longitudinal optic phonons and two‐dimensional electron gas electrons in In0.53Ga0.47As‐In0.52Al0.48As δ‐doped heterostructures provides a powerful probe of electronic properties in these In‐based structures. The two highest frequency modes, of the three coupled electron‐phonon modes expected in this system, were observed, with the highest frequency mode being identified in InGaAs‐based systems. The large dispersion of this mode makes it a particularly sensitive probe for changes in such properties as carrier concentration and subband energy. For structures with higher carrier concentrations coupling of the longitudinal optic phonon to multiple electron intersubband transitions is resolved. These measurements are particularly useful for heavily doped structures for which room‐temperature Hall measurements cannot distinguish channel electrons from those in parallel conduction paths.
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78.30.Fs III-V and II-VI semiconductors
78.66.Fd III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

On resolving hot carrier induced degradation mechanisms in silicon‐on‐sapphire metal‐oxide‐semiconductor field‐effect transistors

E. Y. Chao and G. P. Li

Appl. Phys. Lett. 63, 1912 (1993); http://dx.doi.org/10.1063/1.110646 (3 pages)

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Hot carrier induced damage in silicon‐on‐sapphire (SOS) metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) are reported. Various experimental techniques—the peak linear‐region transconductance change, extrapolated threshold voltage shift, exponent in time dependence of transconductance, and charge pumping current—are employed to explore the degradation mechanisms. Hot light holes alone in silicon‐on‐sapphire MOSFETs are found ineffective in generating interface states, but their interaction with trapped electrons are.
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85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Novel short‐gas‐residence‐time electron cyclotron resonance plasma etching

Kazunori Tsujimoto, Takao Kumihashi, and Shinichi Tachi

Appl. Phys. Lett. 63, 1915 (1993); http://dx.doi.org/10.1063/1.110647 (3 pages) | Cited 7 times

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Novel short‐gas‐residence‐time electron cyclotron resonance (ECR) plasma etching is described. Using a newly equipped high‐pumping‐rate etching system (5000 l/s), we obtained a high etch rate and high anisotropic etching of silicon at low pressure and high gas flow rate. The residence time obtained was 30 ms. The silicon etch rate with Cl2 dramatically increased up to 1 μm/min as the gas flow rate increased to 90 sccm at 0.5 mTorr. It was proven by plasma emission measurement that the reaction products were minimized by the present method. These results indicate that the short‐gas residence time produces a small amount of reaction products and a large amount of etching species.
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81.65.-b Surface treatments
85.40.Hp Lithography, masks and pattern transfer
52.50.Gj Plasma heating by particle beams

Composition dependence of band gap and type of lineup in In1−x−yGaxAlyAs/InP heterostructures

J. Böhrer, A. Krost, and D. B. Bimberg

Appl. Phys. Lett. 63, 1918 (1993); http://dx.doi.org/10.1063/1.110648 (3 pages) | Cited 18 times

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In1−x−yGaxAlyAs is grown lattice matched by low pressure metalorganic chemical vapor deposition on InP and characterized using low temperature photoluminescence. Compositional information is obtained from energy dispersive x‐ray spectroscopy and the band gap is determined as a function of Al content. We obtain Eg(y)=0.81+0.036y+2.96y2 eV at 2 K. For Al compositions larger than 22% a type II staggered band lineup is observed. At this point the conduction band discontinuity disappears (ΔEc=0). The conduction band discontinuity as a function of the Al composition is ΔEc(y)=0.245−1.179y+0.3y2 eV.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors

Ultrafast photodetection with an AlInAs/GaInAs heterojunction bipolar transistor

T. F. Carruthers, M. Y. Frankel, and C. S. Kyono

Appl. Phys. Lett. 63, 1921 (1993); http://dx.doi.org/10.1063/1.110649 (3 pages) | Cited 10 times

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Femtosecond visible‐wavelength optical pulses were injected into unmodified AlInAs/GaInAs single‐heterojunction bipolar transistors with current unity‐gain frequencies of ∼20 GHz. Emitter photocurrent transients as fast as 2.4 ps, corresponding to a photodetection bandwidth in excess of 200 GHz, were measured electro‐optically. The responsivity was as high as 0.078 A/W at 620 nm. Slow photocurrent components due to photogenerated holes could be canceled with appropriate base biasing; measurements of the slow photocurrents provided information about the dynamics of carrier recombination in the base.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.60.Dw Photodiodes; phototransistors; photoresistors
72.40.+w Photoconduction and photovoltaic effects
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Detection of oxygen incorporated in molecular‐beam epitaxy grown GaAs‐on‐AlAs interfaces and AlAs layers by secondary ion mass spectrometry

T. Someya, H. Akiyama, Y. Kadoya, T. Noda, T. Matsusue, H. Noge, and H. Sakaki

Appl. Phys. Lett. 63, 1924 (1993); http://dx.doi.org/10.1063/1.110650 (3 pages) | Cited 7 times

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By employing a long growth interruption (GI) in molecular beam epitaxy, we have successfully determined the concentration of oxygen incorporated in GaAs/AlAs interfaces and AlAs layers by secondary ion mass spectrometry. The concentration of oxygen atoms incorporated on AlAs surfaces during GI is found to be proportional to the period of GI when the incoming fluxes of residual oxygen‐related species reach steady‐state values. The net incorporation rate of oxygen on the AlAs surface is found to be constant for a wide range of substrate temperatures from 540 to 620 °C, indicating that the oxygen desorption is negligible.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Nanosize structures connectivity in porous silicon and its relation to photoluminescence efficiency

O. Teschke, F. Alvarez, L. Tessler, and M. U. Kleinke

Appl. Phys. Lett. 63, 1927 (1993); http://dx.doi.org/10.1063/1.110651 (3 pages) | Cited 18 times

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Transmission electron microscopy is used to reveal the existence of an interconnected nanosize structure in porous silicon films. The interconnections of this nanostructure determine the photoexcited electron‐hole pair separation and consequently the luminescence efficiency of the material. Efficient photoluminescence is obtained from structures which shows no connectivity.
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78.55.Hx Other solid inorganic materials
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Electron spin resonance investigations of oxidized porous silicon

B. K. Meyer, V. Petrova‐Koch, T. Muschik, H. Linke, P. Omling, and V. Lehmann

Appl. Phys. Lett. 63, 1930 (1993); http://dx.doi.org/10.1063/1.110652 (3 pages) | Cited 26 times

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The defect properties of rapidly thermally oxidized porous silicon are studied by electron paramagnetic resonance. Two different types of defects can be distinguished. One is very similar to the defects observed in damaged crystalline or amorphous Si, whereas the second one is closely related to the Pb center. A maximum defect density of 8×1018 cm−3 is observed for samples annealed at about 600 °C. The intensity of the photoluminescence band at 1.7 eV anticorrelates with the density of the defects.
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78.55.Hx Other solid inorganic materials
76.30.Mi Color centers and other defects
81.65.-b Surface treatments

Morphological instability and Si diffusion in nanoscale cobalt silicide films formed on heavily phosphorus doped polycrystalline silicon

S. Pramanick, Yu. N. Erokhin, B. K. Patnaik, and G. A. Rozgonyi

Appl. Phys. Lett. 63, 1933 (1993); http://dx.doi.org/10.1063/1.110804 (3 pages) | Cited 8 times

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In this letter we examine the interdiffusion and reaction of deposited cobalt layers during the formation of nanoscale (<35 nm) silicide films on heavily phosphorus doped polycrystalline silicon films. The onset of morphological instability is indicated by an increase of layer resistivity. Cross‐section transmission electron micrographs of high resistance films, which were formed by rapid thermal annealing at 700 °C for 30 s, show a series of disconnected ‘‘islands’’ of CoSi2 with or without a highly disordered (amorphous) Si‐rich top surface layer. A continuous band of voids, attributed to the Kirkendall effect and to phase transformation induced volume changes, initially appear at the CoSi/CoSi2 interface. In the highly agglomerated films, these voids separate the buried CoSi2 islands and buried polycrystalline Si from the disordered surface layer. The sequence of events is analyzed in terms of grain boundary diffusion, grain boundary grooving, and the impact of phosphorus concentration (∼1020 cm−3) on Si diffusivity.
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66.30.Ny Chemical interdiffusion; diffusion barriers
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Schottky characteristics of GaAs surface cleaned by ultrasonic running deionized water treatment

Y. Hirota

Appl. Phys. Lett. 63, 1936 (1993); http://dx.doi.org/10.1063/1.110606 (3 pages) | Cited 3 times

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Schottky characteristics for n‐type (001)‐GaAs surfaces prepared by ultrasonic running deionized water treatment (URDIW) are investigated by measuring Schottky diodes. Schottky barrier height for the URDIW treated surfaces is more sensitive to the metal work function, and is smaller compared to those of the chemically etched surfaces. We discuss Schottky characteristics for the URDIW treated surfaces based on the hydrogen‐terminated model.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.20.At Surface states, band structure, electron density of states
81.65.-b Surface treatments
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