APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

4 Oct 1993

Volume 63, Issue 14, pp. 1865-2004

Page 2 of 2 Pages Previous Page | Jump to Page

Barrier height enhancement of Schottky diodes on n‐In0.53Ga0.47As by cryogenic processing

H. J. Lee, W. A. Anderson, H. Hardtdegen, and H. Lüth

Appl. Phys. Lett. 63, 1939 (1993); http://dx.doi.org/10.1063/1.110607 (3 pages) | Cited 10 times

Full Text: | Download PDF

Show Abstract
Schottky contacts on n‐In0.53Ga0.47As have been made by metal deposition on substrates cooled to a temperature of 77 K. The current‐voltage and capacitance‐voltage characteristics showed that the Schottky diodes formed at low temperature had a much improved barrier height compared to those formed at room temperature. The Schottky barrier height ϕB, was found to be increased from ∼0.2 to 0.60 eV with Ag metal. For the low temperature diode, the saturation current density, J0, was about four orders smaller than for the room temperature diode. Deep level transient spectroscopy studies of n‐InGaAs low temperature diodes exhibited one electron trap located at Ec‐0.23 eV. This trap level was identified as a bulk trap.
Show PACS
73.30.+y Surface double layers, Schottky barriers, and work functions
85.30.Hi Surface barrier, boundary, and point contact devices
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Room‐temperature luminescence from Er‐implanted semi‐insulating polycrystalline silicon

S. Lombardo, S. U. Campisano, G. N. van den Hoven, A. Cacciato, and A. Polman

Appl. Phys. Lett. 63, 1942 (1993); http://dx.doi.org/10.1063/1.110608 (3 pages) | Cited 58 times

Full Text: | Download PDF

Show Abstract
Semi‐insulating polycrystalline silicon films with oxygen concentrations in the range 4–27 at. % were deposited by low‐pressure chemical vapor deposition of SiH4 and N2O onto silicon substrates, annealed at 920 °C, and then implanted with 2×1015 500 keV Er ions/cm2. After annealing at temperatures in the range 300–900 °C, the samples show intense room‐temperature luminescence around 1.54 μm, characteristic of intra‐4f emission from Er3+, upon excitation using an Ar ion laser. The luminescence intensity increases with increasing oxygen concentration in the film. The luminescence is attributed to Er3+ ions in oxygen‐rich shells around Si nanograins, excited by a photocarrier‐mediated process.
Show PACS
78.55.Hx Other solid inorganic materials
78.30.Hv Other nonmetallic inorganics
78.66.Li Other semiconductors

Transient four‐wave mixing on (InGa)As/InP multiple quantum wells using a femtosecond optical parametric oscillator

T. F. Albrecht, J. H. H. Sandmann, J. Feldmann, W. Stolz, E. O. Göbel, A. Nebel, C. Fallnich, and R. Beigang

Appl. Phys. Lett. 63, 1945 (1993); http://dx.doi.org/10.1063/1.110609 (3 pages) | Cited 9 times

Full Text: | Download PDF

Show Abstract
We present femtosecond four‐wave mixing (FWM) experiments on unstrained, thin (InGa)As/InP multiple quantum wells in the spectral region around 1175 nm. These experiments became feasible by employing a stabilized femtosecond optical parametric oscillator which generates tunable 160 fs pulses in the near‐infrared. The dephasing time of the heavy‐hole exciton is determined to be 1.2 ps at low temperature, corresponding to a homogeneous linewidth of 1.1 meV. In addition, a beating of the FWM signal with a time period of 1.3 ps corresponding to an energy spacing of 3.2 meV is observed. We attribute this to the simultaneous excitation of localized excitons and excitons bound to an impurity or defect, which are not spectrally resolved in the linear optical spectra due to considerable inhomogeneous broadening.
Show PACS
78.66.Fd III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.62.Fi Laser spectroscopy

Difference in light‐induced annealing behavior of deposition‐ and light‐induced defects in hydrogenated amorphous silicon

N. Hata and A. Matsuda

Appl. Phys. Lett. 63, 1948 (1993); http://dx.doi.org/10.1063/1.110610 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
First experimental results on light‐induced annealing (LIA) of deposition‐induced defects (DID) in hydrogenated amorphous silicon (a‐Si:H) are reported. LIA of DID and of light‐induced defects (LID) showed a big difference: the reduction in density of DID by LIA is as low as one third or less of LID reduced by LIA, while thermal annealing reduced DID and LID very similarly. Those results indicate a structural difference between DID and LID, and are discussed in connection with a structural model of a‐Si:H.
Show PACS
61.72.Cc Kinetics of defect formation and annealing
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.43.Dq Amorphous semiconductors, metals, and alloys
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors

Low energy (100 eV) C+ ion doping into GaAs using combined ion beam and molecular beam epitaxial technology

Tsutomu Iida, Yunosuke Makita, Shinji Kimura, Stefan Winter, Akimasa Yamada, Hajime Shibata, Akira Obara, Shigeru Niki, Paul Fons, Yushin Tsai, and Shin‐ichiro Uekusa

Appl. Phys. Lett. 63, 1951 (1993); http://dx.doi.org/10.1063/1.110611 (3 pages) | Cited 11 times

Full Text: | Download PDF

Show Abstract
Low‐energy (100 eV) carbon ion (C+) irradiation during molecular beam epitaxy of GaAs was carried out using combined ion beam and molecular beam epitaxy (CIBMBE) technology for the growth temperature (Tg) range between 500 and 590 °C. Carbon incorporation was identified by both low‐temperature (2 K) photoluminescence and Hall effect measurements. In the PL spectra, two well‐established specific emissions, ‘‘g’’ and [g‐g], which are closely related to acceptor impurities, were observed for the above Tg range. The results indicate that carbon was both optically and electrically well activated as an acceptor even at Tg as low as 500 °C. Maximum net hole concentration, ‖NA‐ND‖, as high as 3×1018 cm−3 was obtained with no appreciable radiation damages and undesired impurity contamination.
Show PACS
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.55.Cr III-V semiconductors
71.55.Eq III-V semiconductors

IIA‐III2‐S4 ternary compounds: New host matrices for full color thin film electroluminescence displays

P. Benalloul, C. Barthou, J. Benoit, L. Eichenauer, and A. Zeinert

Appl. Phys. Lett. 63, 1954 (1993); http://dx.doi.org/10.1063/1.110612 (3 pages) | Cited 23 times

Full Text: | Download PDF

Show Abstract
Strontium thiogallate (SrGa2S4) thin films have been prepared by rf reactive magnetron sputtering. This sulfur matrix permits the acceleration of charge carriers to optical energies under high electric field and provides green electroluminescence when doped with europium. The color coordinates are better than those achieved by other known green thin film electroluminescent phosphors. Strontium thiogallates as other ternary IIA‐III2‐(S,Se)4 compounds doped with Eu2+ or Ce3+ are good candidates for thin film electroluminescence phosphors of full color displays.
Show PACS
85.60.Pg Display systems
78.60.Fi Electroluminescence
78.66.Sq Composite materials
42.79.Kr Display devices, liquid-crystal devices

Low‐energy Ar+ ion bombardment‐induced modification of surface atomic bond lengths on InP(100) wafer

P. S. Mangat, P. Soukiassian, Y. Huttel, Z. Hurych, B. Gruzza, and A. Porte

Appl. Phys. Lett. 63, 1957 (1993); http://dx.doi.org/10.1063/1.110613 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
We report the first direct measurement of surface interatomic bond distance modifications due to ion bombardment. The experiments were performed using low energy Ar+ ion on a InP(100) surface by photoemission x‐ray absorption fine structure. The structural changes are sputtering time dependent and result in first (P–In) and second (P–P) surface bond distances relaxation approaching the bulk values. It suggests that, prior to bond breaking, the Ar+ ion beam first stretches atomic bond lengths during a precursor stage, with small energy and momentum transfer. This work brings new insights into the knowledge of ion sputtering various micromechanisms which is relevant for surface preparation.
Show PACS
81.65.-b Surface treatments
61.80.Jh Ion radiation effects
68.35.B- Structure of clean surfaces (and surface reconstruction)
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Ultrahigh mobility two‐dimensional electron gas in AlxGa1−xAs/GaAs heterostructures by organometallic vapor phase epitaxy

Ricardo Basco, Farid Agahi, and Kei May Lau

Appl. Phys. Lett. 63, 1960 (1993); http://dx.doi.org/10.1063/1.110614 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
Ultrahigh mobility AlxGa1−xAs/GaAs two‐dimensional electron gas (2DEG) structures were grown by conventional low‐pressure organometallic vapor phase epitaxy (LP‐OMVPE). We achieved maximum mobilities of 766 000 cm2/V s at 2.2 K and 171 000 cm2/V s at 77 K after exposure to light (to our knowledge, the highest ever by OMVPE growth), with a sheet carrier density of 4.9×1011/cm2. The high‐mobility structures were obtained by either growing an AlGaAs‐related buffer underneath the 2DEG structure or preconditioning of the reactor with an undoped AlGaAs run. The dark mobilities of samples grown with the preconditioning procedures and without the AlGaAs‐related buffer are much higher than those with the buffer.
Show PACS
73.50.Dn Low-field transport and mobility; piezoresistance
81.15.Kk Vapor phase epitaxy; growth from vapor phase
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

GaAs heteroepitaxy on an epitaxial Si surface with a low‐temperature process

Hidefumi Mori, Masami Tachikawa, Mitsuru Sugo, and Yoshio Itoh

Appl. Phys. Lett. 63, 1963 (1993); http://dx.doi.org/10.1063/1.110615 (3 pages) | Cited 7 times

Full Text: | Download PDF

Show Abstract
This letter reports the growth of an anti‐phase‐free GaAs layer on a (100) epitaxial Si substrate offset by 0.5° without high‐temperature treatment prior to growth. Atomic force microscopy shows that the epitaxial Si surface has regular steps prior to growth. The average terrace width is 25.6 nm, and the step height is calculated to be 0.22 nm from the terrace width and offset angle, which approximately corresponds to a double atomic layer height of (100) Si of 0.27 nm. This single domain structure of the epitaxial Si surface gives the heteroepitaxial GaAs a high crystalline quality. Secondary ion mass spectrometry profiles show an abrupt GaAs‐Si interface. Laser diodes on epitaxial Si substrates show room‐temperature cw operation which confirms device applicability.
Show PACS
68.55.-a Thin film structure and morphology
42.55.Px Semiconductor lasers; laser diodes

Thermally stimulated current in fast neutron irradiated semi‐insulating GaAs: Ga antisite related new trap

K. Kuriyama, K. Tomizawa, K. Koga, N. Hayashi, H. Watanabe, Y. Ikeda, and H. Maekawa

Appl. Phys. Lett. 63, 1966 (1993); http://dx.doi.org/10.1063/1.110616 (3 pages) | Cited 7 times

Full Text: | Download PDF

Show Abstract
The evaluation of the defects in fast neutron irradiated semi‐insulating GaAs was studied using thermally stimulated current (TSC) and photoluminescence (PL) methods. A new TSC peak is observed at an annealing stage between 550 and 600 °C. This peak is associated with a GaAs‐X complex defect, which might include X as the gallium vacancy, according to both the analysis of the activation energy and the annealing behavior of the PL emission. A prominent TSC peak is also observed in as‐irradiated samples, showing the creation of an AsGa‐ VAs complex.
Show PACS
71.55.Eq III-V semiconductors
61.80.Hg Neutron radiation effects
78.55.Cr III-V semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Phase transformation mechanisms involved in excimer laser crystallization of amorphous silicon films

James S. Im, H. J. Kim, and Michael O. Thompson

Appl. Phys. Lett. 63, 1969 (1993); http://dx.doi.org/10.1063/1.110617 (3 pages) | Cited 233 times

Full Text: | Download PDF

Show Abstract
We have investigated the phase transformation mechanisms and the resulting microstructures of excimer laser‐induced crystallization of amorphous Si films on SiO2. It is shown that the process can be characterized into two major regimes, based on the dependence of the grain size and the melt duration as a function of the incident energy density. It is found that at the transition between the two regimes, exceedingly large grain‐sized polycrystalline films can be obtained. We call this the super lateral growth phenomenon, and propose a model based on liquid‐phase regrowth from the residual solid seeds when near‐complete melting of the Si film occurs.
Show PACS
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

New leakage mechanism in sub‐5‐nm oxynitride dielectrics

Tue Nguyen, Daniel A. Carl, Son V. Nguyen, David M. Dobuzinsky, and Josef W. Korejwa

Appl. Phys. Lett. 63, 1972 (1993); http://dx.doi.org/10.1063/1.110618 (3 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
Conduction current in thin (3.5–6.5 nm) oxynitride dielectrics prepared by rapid thermal annealing of SiO2 films in NH3 ambient at high temperature (1100 °C) is studied. Significantly high leakage currents at low fields and independent of temperatures has been observed in films with thickness of 4.5 nm or less. The enhanced conduction is proposed to be direct tunneling current via electron traps located in the dielectric film. This new leakage mechanism in sub‐5‐nm oxynitride dielectric is different from the thicker (5.5 nm or higher) films where the conduction is only slightly enhanced and is temperature dependent. This leakage mechanism could open new applications where significant tunneling current are needed for thicker (<5 nm) films.
Show PACS
73.61.Ng Insulators
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Additional transmission resonances in interband tunnel structures

Claudio Aversa and J. E. Sipe

Appl. Phys. Lett. 63, 1975 (1993); http://dx.doi.org/10.1063/1.110619 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
We show that transmission resonances associated with heavy‐hole states in InAs/GaSb based interband tunnel structures survive for vanishingly small crystal momentum parallel to the interface. These effects are expected to arise by several possible mechanisms including the material dependence of the zone‐center Bloch functions. We find that one simple model can account for the diverse ways that such transmission resonances manifest themselves in this and other systems.
Show PACS
73.40.Gk Tunneling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Thin film Bi2Sr2CaCu2O8+x Josephson junctions and direct current superconducting quantum interference devices on (001) SrTiO3 bicrystals

T. Amrein, M. Seitz, D. Uhl, L. Schultz, and K. Urban

Appl. Phys. Lett. 63, 1978 (1993); http://dx.doi.org/10.1063/1.110620 (3 pages) | Cited 15 times

Full Text: | Download PDF

Show Abstract
Single‐layer Josephson junctions and dc superconducting quantum interference devices (SQUIDs) have been prepared from epitaxial, laser‐deposited thin films of Bi2Sr2CaCu2O8+x on (001) SrTiO3 bicrystals with a misorientation angle of 36.8°. The current‐voltage characteristics of the Josephson junctions are of resistively shunted junction type. The Ic(B) patterns look rather periodical and symmetrical but show clear irregularities in comparison to an ideal Fraunhofer‐like pattern. However, the supercurrent can be suppressed almost completely by applying an external magnetic field. The best dc‐SQUID—with a SQUID hole of 5 μm×20 μm and an estimated inductance of about 36 pH—works up to 77 K. At 76 K the flux to voltage conversion ∂V/∂Φ at the appropriate flux bias is 20 μV/Φ0. The best equivalent flux noise which was measured in the flux locked loop mode at 62 K is 25 μΦ0/√Hz at 1 Hz and 4 μΦ0/√Hz in the white noise region for f≥350 Hz, corresponding to an energy resolution of 4×10−29 J/Hz at 1 Hz and 9×10−31 J/Hz in the white noise region.
Show PACS
85.25.Dq Superconducting quantum interference devices (SQUIDs)
85.25.Cp Josephson devices
74.78.-w Superconducting films and low-dimensional structures
74.72.-h Cuprate superconductors

Model for the vaporization of mixed organometallic compounds in the metalorganic chemical vapor deposition of high temperature superconducting films

Guangyao Meng, Gang Zhou, Roger L. Schneider, Bimal K. Sarma, and Moises Levy

Appl. Phys. Lett. 63, 1981 (1993); http://dx.doi.org/10.1063/1.110621 (3 pages) | Cited 10 times

Full Text: | Download PDF

Show Abstract
A model of the vaporization and mass transport of mixed organometallics from a single source for thin film metalorganic chemical vapor deposition is presented. A stoichiometric gas phase can be obtained from a mixture of the organometallics in the desired mole ratios, in spite of differences in the volatilities of the individual compounds. Proper film composition and growth rates are obtained by controlling the velocity of a carriage containing the organometallics through the heating zone of a vaporizer.
Show PACS
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
74.78.-w Superconducting films and low-dimensional structures

High temperature superconductor‐normal metal‐superconductor Josephson junctions with high characteristic voltages

P. A. Rosenthal, E. N. Grossman, R. H. Ono, and L. R. Vale

Appl. Phys. Lett. 63, 1984 (1993); http://dx.doi.org/10.1063/1.110622 (3 pages) | Cited 23 times

Full Text: | Download PDF

Show Abstract
We have fabricated step edge superconductor‐normal metal‐superconductor microbridges using YBa2Cu3O7−x(YBCO) and noble metals with critical current‐normal resistance (IcRN) products as high as 10 mV and normal resistances up to 38 Ω. Our fabrication process achieves high values of the IcRN product by exploiting the anisotropy in the properties of epitaxial YBCO films, allowing contact only between normal metal and superconductor through the crystalline axes which support the largest Josephson coupling. This results in a dramatic increase in the normal resistance of a junction without decreasing its critical current. We discuss the role of the superconductor‐normal metal boundary resistance on the junction electrical properties. We have coupled submillimeter wave rf currents quasioptically into junctions integrated at the feeds of noble metal planar log periodic antennas and have induced up to 7 Shapiro steps in the current‐voltage characteristics with a 760 GHz beam from a far infrared laser.
Show PACS
85.25.Cp Josephson devices
74.45.+c Proximity effects; Andreev reflection; SN and SNS junctions
74.78.-w Superconducting films and low-dimensional structures

Observation of spin structure related positive magnetoresistance in antiferromagnetically coupled magnetic multilayers

S. S. P. Parkin

Appl. Phys. Lett. 63, 1987 (1993); http://dx.doi.org/10.1063/1.110623 (3 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
We report the observation of a previously unobserved positive magnetoresistance effect in several antiferromagnetically coupled magnetic multilayers. The effect is typically very small with the largest magnetoresistance values observed of less than 0.1% at 4.2 K. We find that the effect is common in magnetic multilayers comprised of magnetic layers of Fe and Co and spacer layers composed of elements from the left hand portions of the 4d and 5d transition metal periods. We propose the magnetoresistance is a consequence of Lorentz magnetoresistance and is unrelated to the giant magnetoresistance effect observed in related structures.
Show PACS
75.70.-i Magnetic properties of thin films, surfaces, and interfaces
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
72.15.Gd Galvanomagnetic and other magnetotransport effects

Magnetoresistance in magnetic manganese oxide with intrinsic antiferromagnetic spin structure

Ken‐ichi Chahara, Toshiyuki Ohno, Masahiro Kasai, and Yuzoo Kozono

Appl. Phys. Lett. 63, 1990 (1993); http://dx.doi.org/10.1063/1.110624 (3 pages) | Cited 757 times

Full Text: | Download PDF

Show Abstract
Giant and isotropic magnetoresistance as huge as −53% was observed in magnetic manganese oxide La0.72Ca0.25MnOz films with an intrinsic antiferromagnetic spin structure. We ascribe this magnetoresistance to spin‐dependent electron scattering due to spin canting of the manganese oxide.
Show PACS
72.20.My Galvanomagnetic and other magnetotransport effects
75.70.-i Magnetic properties of thin films, surfaces, and interfaces

Magnetization process observation of a CoNiCr film in the field of a weakly excited objective lens in transmission electron microscope

Li Tang and Gareth Thomas

Appl. Phys. Lett. 63, 1993 (1993); http://dx.doi.org/10.1063/1.110625 (3 pages) | Cited 7 times

Full Text: | Download PDF

Show Abstract
Dynamic observation of the magnetization process of a fcc CoNiCr thin film has been made by tilting the specimen in the magnetic field of a weakly excited objective lens in a transmission electron microscope. Domain wall motion, magnetization direction rotation, and pinning effect due to surface NaCl contamination have been clearly revealed by this method for the film.
Show PACS
75.70.-i Magnetic properties of thin films, surfaces, and interfaces
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)

New epitaxial multilayer system for spin‐valve magnetic sensors

J. R. Childress, O. Durand, A. Schuhl, and J.‐M. George

Appl. Phys. Lett. 63, 1996 (1993); http://dx.doi.org/10.1063/1.110626 (3 pages) | Cited 9 times

Full Text: | Download PDF

Show Abstract
Experimental results on a new ‘‘spin‐valve’’ system for magnetoresistive detection, based on epitaxial Fe/Pd bilayers grown on MgO single crystals, are presented. These Fe/Pd bilayers display particularly sensitive magnetic properties, which are shown to result directly from the presence of the polarized Pd interface. A magnetically hard trilayer is subsequently grown onto the soft Fe/Pd bilayer, forming an epitaxial spin‐valve system which displays abrupt transitions between states of parallel and antiparallel alignment of the two magnetic layers. The field sensitivity of the resistivity at low temperatures attains 0.3% per Oe in a Fe/Pd/Cu/Co/Cu system.
Show PACS
72.20.My Galvanomagnetic and other magnetotransport effects
75.70.-i Magnetic properties of thin films, surfaces, and interfaces
07.55.-w Magnetic instruments and components

Infrared radiometry for monitoring temperature of photoresist during dry etching

Yair Dankner, S. Simhony, Y. Shneider, and A. Katzir

Appl. Phys. Lett. 63, 1999 (1993); http://dx.doi.org/10.1063/1.110627 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
The temperature of a thin photoresist layer on a silicon wafer was measured in situ and controlled during a dry etching process by using a silver halide optical fiber noncontact thermometer. We were able to monitor and control the photoresist temperature to within 2 °C of a present value. This may be used to prevent cross linking and deterioration of the photoresist during dry processing of semiconductors.
Show PACS
81.65.-b Surface treatments
07.20.Dt Thermometers
85.40.Hp Lithography, masks and pattern transfer

Features of gold having micrometer to centimeter dimensions can be formed through a combination of stamping with an elastomeric stamp and an alkanethiol ‘‘ink’’ followed by chemical etching

Amit Kumar and George M. Whitesides

Appl. Phys. Lett. 63, 2002 (1993); http://dx.doi.org/10.1063/1.110628 (3 pages) | Cited 575 times

Full Text: | Download PDF

Show Abstract
This letter describes a technique that can be used to produce well‐defined features of gold. The technique involves patterning of a self‐assembled monolayer (SAM) on a gold substrate using an elastomer stamp (fabricated either from a phenol‐formaldehyde polymer or polydimethylsiloxane), followed by selective etching in an aqueous, basic solution of cyanide ion and dissolved dioxygen (1M KOH, 0.1 M KCN). Electrically conductive structures of gold with dimensions as small as 1 μm have been produced using this procedure. Once a rubber stamp is fabricated, patterning and etching of gold substrates is straightforward. This method is convenient, does not require routine access to clean rooms and photolithographic equipment, and can be used to produce multiple copies of a pattern.
Show PACS
81.05.Bx Metals, semimetals, and alloys
Page 2 of 2 Pages Previous Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close