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8 Nov 1993

Volume 63, Issue 19, pp. 2591-2704

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Phase locking of linear arrays of CO2 waveguide lasers by the waveguide‐confined Talbot effect

A. M. Hornby, H. J. Baker, A. D. Colley, and D. R. Hall

Appl. Phys. Lett. 63, 2591 (1993); http://dx.doi.org/10.1063/1.110440 (3 pages) | Cited 8 times

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Phase locking of CO2 waveguide laser arrays of up to 19 channels has been attained by low‐loss coupling in a slab waveguide of Talbot imaging dimensions, within a two‐mirror cavity. The technique provides strong channel coupling while maintaining a low laser threshold. A seven channel array phase locked into a single mode by this technique has produced 100 W of output and 10% efficiency, demonstrating the effectiveness of Talbot imaging, when combined with confinement in a slab waveguide.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Generation of ultrashort pulses from a superluminescent diode with a monolithically integrated absorber in a coupled‐cavity configuration

C. F. Lin and C. L. Tang

Appl. Phys. Lett. 63, 2594 (1993); http://dx.doi.org/10.1063/1.110441 (3 pages) | Cited 2 times

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We report the generation of extremely short pulses using a superluminescent diode with a monolithically integrated absorber in an external cavity coupled to an additional empty cavity. The pulses obtained have an autocorrelation width of 1.8–2.6 ps without pulse compression. After pulse compression external to the coupled cavity, the pulse width is further reduced to as short as approximately 190 fs. The short pulses are obtained by careful adjustment of the length of the auxiliary cavity to match that of the main cavity.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers

Novel self‐mode‐locking mechanism in narrow‐band lasers

Yingxin Bai, Shisheng Chen, Zhijiang Wang, and Guoqing Zhang

Appl. Phys. Lett. 63, 2597 (1993); http://dx.doi.org/10.1063/1.110442 (3 pages) | Cited 2 times

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We suggest a novel self‐mode‐locking (SML) mechanism in narrow‐band lasers. The analysis for such a mechanism show that the gain‐line splitting (Stark splitting) induced by an intracavity laser field can form a dip or dips in gain‐line shape, and the gain medium with such a gain‐line shape can produce short pulses. The further analyses give the rough criterion for SML, i.e., 8 ln(2)Δω2s≳Δω2g for the gas lasers and 12Δω2s≳Δω2g for the solid or liquid lasers.
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42.60.Fc Modulation, tuning, and mode locking

Increased fiber communications bandwidth from a resonant cavity light emitting diode emitting at λ=940 nm

N. E. J. Hunt, E. F. Schubert, R. F. Kopf, D. L. Sivco, A. Y. Cho, and G. J. Zydzik

Appl. Phys. Lett. 63, 2600 (1993); http://dx.doi.org/10.1063/1.110443 (3 pages) | Cited 41 times

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Substrate‐emitting InGaAs/AlGaAs resonant cavity light emitting diodes (RCLEDs) emitting at λ=940 nm have been fabricated for use in optical communications. The devices exhibit a high output efficiency, with a far‐field intensity of 85 μW/Steradian from a planar surface at a current of 14 mA. The spontaneous spectrum exhibits a very narrow peak of only 5 nm width, as opposed to the 50‐nm‐wide peak of an 875 nm wavelength reference LED. We show that the narrow spectrum drastically reduces the effects of chromatic dispersion within a 3.37 km length of 62.5 μm core graded index multimode fiber. The resulting −3 dB frequency is 102 MHz for the RCLED and fiber system, as opposed to only 33 MHz for the chromatic dispersion limited reference device.
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85.60.Jb Light-emitting devices
42.50.-p Quantum optics
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Enhanced photoluminescence by resonant absorption in Er‐doped SiO2/Si microcavities

E. F. Schubert, N. E. J. Hunt, A. M. Vredenberg, T. D. Harris, J. M. Poate, D. C. Jacobson, Y. H. Wong, and G. J. Zydzik

Appl. Phys. Lett. 63, 2603 (1993); http://dx.doi.org/10.1063/1.110444 (3 pages) | Cited 25 times

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Si/SiO2 Fabry–Perot microcavities with an Er‐implanted SiO2 active region resonant at the Er excitation wavelength of 980 nm have been realized. Room‐temperature photoluminescence measurements reveal that the Er luminescence intensity increases by a factor of 28 as compared to a structure without cavity enhancement. We show that the experimental enhancement of the luminescence intensity agrees with theory if optical absorption of the 980 nm light in the Si layers of the cavity and reduced mirror reflectivities are taken into account.
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78.55.Hx Other solid inorganic materials
42.50.-p Quantum optics

Ho3+ to Yb3+ back transfer and thermal quenching of upconversion green emission in fluoride crystals

X. X. Zhang, P. Hong, M. Bass, and B. H. T. Chai

Appl. Phys. Lett. 63, 2606 (1993); http://dx.doi.org/10.1063/1.110445 (3 pages) | Cited 9 times

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Energy transfer from Ho3+ to Yb3+ has been demonstrated in fluoride crystals such as KYF4, BaY2F8, and LiYF4. This transfer was found to occur above a certain temperature and its efficiency increases with temperature. It accounts for the thermal quenching of green emission from upconverted Ho3+ and partly explains the failure, to date, to obtain room temperature, Yb3+ sensitized Ho3+ upconversion lasers in these three hosts. Low Yb3+ concentration is suggested for future attempts to achieve room temperature Yb3+, Ho3+ upconversion green laser operation of these crystals.
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42.70.Hj Laser materials
42.55.Rz Doped-insulator lasers and other solid state lasers
78.55.Hx Other solid inorganic materials

Optically reversible switching between binary states using multistable loops

Yasunori Tokuda, Yuji Abe, Noriaki Tsukada, and Shigetoshi Nara

Appl. Phys. Lett. 63, 2609 (1993); http://dx.doi.org/10.1063/1.110446 (3 pages) | Cited 2 times

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We present a novel method of optically reversible switching between binary transmission states by taking advantage of the optical multistability which can be obtained from two bistable devices optically connected in series. The basic set and reset functions were experimentally demonstrated by use of an n‐i‐p‐i‐n device in which two quantum well self‐electro‐optic effect devices are vertically integrated.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks

Study of current‐voltage characteristic in a ZnSe‐based II‐VI laser diode

Ikuo Suemune

Appl. Phys. Lett. 63, 2612 (1993); http://dx.doi.org/10.1063/1.110447 (3 pages) | Cited 5 times

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High operating voltage in a blue‐green laser diode was explained quantitatively by the tunneling process through the barrier at a metal/p‐ZnSe interface. The barrier height at the metal/p‐ZnSe interface was evaluated considering the tunneling and thermionic emission processes in the realistic diode structure.
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42.55.Px Semiconductor lasers; laser diodes
73.25.+i Surface conductivity and carrier phenomena
73.40.Gk Tunneling
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Transition time and turn‐on jitter of optically triggered bistable lasers incorporating a proton bombarded absorber

P. Landais, G.‐H. Duan, E. Gaumont‐Goarin, P. Garabédian, and J. Jacquet

Appl. Phys. Lett. 63, 2615 (1993); http://dx.doi.org/10.1063/1.110423 (3 pages)

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Recently, we have demonstrated 1 Gbit/s error free operation of an optically triggered bistable laser, which is the highest bit‐rate operation ever reported without electrical reset. This is achieved by using proton bombardment of the absorber section which induces a reduction of the carrier lifetime in this section. This letter presents the first experimental results on the transition time and the turn‐on jitter of an optically triggered bistable laser incorporating a proton bombarded absorber section. Current injection conditions that minimize the overall transition time have been derived. It has been found that for a constant current in one active section, the rise time decreases, but the fall time increases with injection current in the other section. An optimal current value can then be found to minimize the overall transition time. The measured turn‐on jitter and relaxation oscillation period decrease with increasing injection current, in good agreement with theoretical predictions.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.55.Rz Doped-insulator lasers and other solid state lasers

Nonlinear optical and electro‐optical properties of single crystal CsTiOAsO4

L. T. Cheng, L. K. Cheng, J. D. Bierlein, and F. C. Zumsteg

Appl. Phys. Lett. 63, 2618 (1993); http://dx.doi.org/10.1063/1.110424 (3 pages) | Cited 13 times

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We report the development of a new nonlinear optical crystal CsTiOAsO4 (CTA). The relatively large cesium ion leads to a structural instability in the orthorhombic structure, which significantly affects its crystal growth properties. Modification of the crystal growth process, however, allows the growth of large inclusion‐free single crystals measuring up to 30×20×25 mm3. The refractive indices, nonlinear optical coefficients, electro‐optic coefficients, and dielectric properties of these crystals were measured using standard techniques. Compared to KTiOPO4, CTA has a smaller birefringence which makes it particularly suitable for frequency doubling Nd:YAG lasers operating near 1.32 μm. We also report the ferroelectric poling of multidomain CTA crystals and discuss possible extension of this poling process to other KTP isomorphs.
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
77.84.Fa KDP- and TGS-type crystals
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.20.Fm Birefringence

Strained single quantum well InGaAs lasers with a threshold current of 0.25 mA

T. R. Chen, L. E. Eng, B. Zhao, Y. H. Zhuang, and A. Yariv

Appl. Phys. Lett. 63, 2621 (1993); http://dx.doi.org/10.1063/1.110425 (3 pages) | Cited 11 times

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Strained layer single quantum well InGaAs lasers with a record low threshold current of 1 mA for as‐cleaved facets and 0.25 mA with high reflectivity coated facets have been demonstrated. In addition, these lasers display a weak dependence of threshold current, quantum efficiency, and lasing wavelength on cavity length in comparison with those single quantum well lasers previously reported.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Transverse mode emission characteristics of gain‐guided surface emitting lasers

K. Tai, Y. Lai, K. F. Huang, T. C. Huang, T. D. Lee, and C. C. Wu

Appl. Phys. Lett. 63, 2624 (1993); http://dx.doi.org/10.1063/1.110426 (3 pages) | Cited 16 times

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Transverse mode emission characteristics of gain‐guided surface emitting lasers at 0.85 μm were investigated. Up to six nondegenerate circularly symmetrical modes were observed with detunings between the adjacent modes around 2.5 Å. Numerical simulations were performed. The calculated beam sizes, difference of modal gains to account for the side mode suppression ratio when operated with one dominant mode, and wavelength detunings agreed with experiments. Numerical simulations also predict that the mirror loss due to Gaussian beam diffraction is nonnegligible for the 1.3–1.55 μm devices.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Bright blue electroluminescence from poly(N‐vinylcarbazole)

Junji Kido, Kenichi Hongawa, Katsuro Okuyama, and Katsutoshi Nagai

Appl. Phys. Lett. 63, 2627 (1993); http://dx.doi.org/10.1063/1.110402 (3 pages) | Cited 160 times

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Electroluminescent devices were fabricated using poly(N‐vinylcarbazole) (PVK) as a hole‐transporting emitter layer and a double layer of 1,2,4‐triazole derivative (TAZ) and tris(8‐quinolinolato)aluminum(III) complex (Alq) as an electron transport layer. A cell structure of glass substrate/indium‐tin‐oxide/PVK/TAZ/Alq/Mg:Ag was employed. In this cell structure, carrier injection from the electrodes to the PVK layer and concomitant electroluminescence from PVK were observed. Blue emission peaking at 410 nm and a luminance of 700 cd/m2 were achieved at a drive voltage of 14 V.  
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
78.66.Qn Polymers; organic compounds
73.40.Sx Metal-semiconductor-metal structures

Enhancement of optical nonlinearity of heavy‐metal oxide glasses by replacing lead and bismuth with thallium

J. Yumoto, S. G. Lee, B. Kippelen, N. Peyghambarian, B. G. Aitken, and N. F. Borrelli

Appl. Phys. Lett. 63, 2630 (1993); http://dx.doi.org/10.1063/1.110403 (3 pages) | Cited 8 times

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We report on the results of degenerate four‐wave mixing experiments at a wavelength of 1.06 μm on a number of heavy‐metal gallate glasses. The replacement of lead (Pb) and/or bismuth (Bi) by thallium (Tl) leads to an enhancement of the optical nonlinearity, resulting in the largest nonresonant electronic nonlinearity yet reported for an oxide glass. χ(3) is proportional to the concentration of Tl; samples with more than 25 cation % Tl have χ(3) larger than that of carbon disulfide (CS2). The optical nonlinearity has an off‐resonant electronic origin, which is confirmed by measurements of the diagonal and off‐diagonal components of the χ(3) tensor.
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42.65.An Optical susceptibility, hyperpolarizability
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.70.Ce Glasses, quartz

Time‐resolved scanning tunneling microscopy through tunnel distance modulation

M. R. Freeman and G. Nunes

Appl. Phys. Lett. 63, 2633 (1993); http://dx.doi.org/10.1063/1.110404 (3 pages) | Cited 11 times

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The ability to perform time‐resolved measurements of fast transient signals with a scanning tunneling microscope has been achieved through direct control of the tunneling distance on short time scales. Modulation of the tip‐sample separation is provided by the use of a magnetostrictive tip driven by a local magnetic field coil. The technique offers a broadly applicable means of obtaining fast dynamical information in tunneling microscopy, and is demonstrated here on nanosecond time scales.
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68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
78.47.-p Spectroscopy of solid state dynamics

4H‐SiC/6H‐SiC interface structures studied by high‐resolution transmission electron microscopy

Hiroshi Iwasaki, Shinji Inoue, Tatsuo Yoshinobu, Masayoshi Tarutani, Yoshizo Takai, Ryuichi Shimizu, Akira Ito, Tsunenobu Kimoto, and Hiroyuki Matsunami

Appl. Phys. Lett. 63, 2636 (1993); http://dx.doi.org/10.1063/1.110405 (2 pages) | Cited 1 time

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The interface structures of 4H‐SiC/6H‐SiC heterostructures formed in monocrystalline bulk silicon carbide were studied by high‐resolution electron microscopy of cross‐sectional specimens. The samples were grown on the (0001) C face of a 6H‐SiC seed with in situ Ce doping. The observed transition region is atomically flat over regions of several hundreds nm. The transition from the initial 6H‐SiC growth to the 4H‐SiC growth happens all at once at certain thicknesses with the occurrence of only a few layers of 4H‐SiC (6H‐SiC) before (after) the transition. The atomic stacking sequence at the interface of the two polytype crystals can be resolved.
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68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology

Novel epitaxial growth mechanism of magnesium oxide/titanium oxide ceramics superlattice thin films observed by reflection high‐energy electron diffraction

Fumikazu Imai, Kimio Kunimori, and Hisakazu Nozoye

Appl. Phys. Lett. 63, 2638 (1993); http://dx.doi.org/10.1063/1.110406 (3 pages) | Cited 2 times

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Magnesium oxide/titanium oxide ceramics superlattice thin films were synthesized by means of a novel reactive evaporation method; a pulsed molecular beam evaporation method. Reflection high‐energy electron diffraction (RHEED) intensity oscillation was observed from the beginning to the end of the synthesis of the superlattice. From the analysis of the RHEED intensity oscillation, the detailed deposition process was analyzed and a novel epitaxial growth mechanism, rough–smooth mechanism, was inferred. This mechanism was proved by high‐resolution transmission electron microscopy (HRTEM).
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81.15.Kk Vapor phase epitaxy; growth from vapor phase

Oxygen poisoning of diamond film growth

William N. Howard, Karl E. Spear, and Michael Frenklach

Appl. Phys. Lett. 63, 2641 (1993); http://dx.doi.org/10.1063/1.110767 (3 pages) | Cited 3 times

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Diamond films were deposited by a cyclic growth‐etch process for up to 72 h. Initial growth rates are typical for the deposition of quality diamond films by continuous process chemical vapor deposition, however, they show a distinct decline as growth progresses. The films show a crystalline faceting characteristic of good quality diamond, but the intensity of the 1332 cm−1 diamond Raman band decreases after 10 h of growth, with a loss of all characteristic carbon Raman bands at 72 h of growth. The present cycling experiments differ from typical continuous diamond deposition processes in that the gas phase composition during the etching cycle is significantly richer in OH, O, and H. Oxygen is proposed to poison the growing surface by forming strongly chemisorbed sites which are trapped in the growing film. Defective carbon deposited above the trapped oxygen etches rapidly in subsequent cycles, and the buildup of such trapped oxygen defects may account for the observed decline in growth rate and quality.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

On the growth of nanocrystalline grains in an aluminum‐based amorphous alloy

Kazuki Nakazato, Yoshihito Kawamura, An Pang Tsai, Akihisa Inoue, and Tsuyoshi Masumoto

Appl. Phys. Lett. 63, 2644 (1993); http://dx.doi.org/10.1063/1.110407 (3 pages) | Cited 32 times

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We have identified a growth process of nanocrystalline grains in amorphous Al87Ni10Ce3 by means of differential scanning calorimetry and transmission electron microscopy. The grain size of the final grown Al was estimated to be ∼15 nm. A typical nucleation‐growth process was observed during the transformation in an amorphous Al85Ni10Ce5. The grain growth process was only observed in Al‐enriched alloys (Al ≳ 87 at. %), indicating that the nuclei pre‐existed in an Al‐enriched area in the original amorphous state.
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81.05.Rm Porous materials; granular materials
61.43.Dq Amorphous semiconductors, metals, and alloys
61.72.Mm Grain and twin boundaries
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)

Impact of in situ photoexcitation on the defectivity of silicon layer implanted with different dose rates of nitrogen ions

A. B. Danilin and A. W. Nemirovski

Appl. Phys. Lett. 63, 2647 (1993); http://dx.doi.org/10.1063/1.110408 (2 pages)

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It was shown using x‐ray diffractometry method that dose rate does not influence the defectivity degree of N+‐implanted Si if the implantation is carried out with in situ photoexcitation. It was also shown that photoexcitation does not appreciably reduce the concentration of interstitial‐type defects.
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61.72.uf Ge and Si
61.80.Jh Ion radiation effects
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Improved solid phase epitaxial growth of lithium tantalate thin films on sapphire, using a two‐step metalorganic chemical‐vapor deposition process

Alex A. Wernberg, Gabriel H. Braunstein, and Henry J. Gysling

Appl. Phys. Lett. 63, 2649 (1993); http://dx.doi.org/10.1063/1.110409 (3 pages) | Cited 8 times

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Epitaxial lithium tantalate thin films were grown on sapphire substrates by metal‐organic chemical‐vapor deposition using a two‐step growth process. After an initial thin (≊30–100 Å thick) amorphous buffer layer of LiTaO3 was deposited and annealed to induce crystallization by solid phase epitaxy (SPE), a second, thicker amorphous lithium tantalate layer was deposited and also crystallized using SPE. The use of the buffer layers substantially improved the crystalline quality of the heteroepitaxial films, with the thickest buffer layer providing the best results. The films were characterized by ion channeling, x‐ray diffraction and scanning electron microscopy.
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81.15.Np Solid phase epitaxy; growth from solid phases
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Random telegraphic noise in double barrier systems

R. E. Salvino and F. A. Buot

Appl. Phys. Lett. 63, 2652 (1993); http://dx.doi.org/10.1063/1.110410 (3 pages)

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A random telegraphic noise (RTN) in a resonant tunneling device (RTD) has been found through a self‐consistent particle Monte Carlo (MC) simulation with model quantum dynamics. The onset of RTN coincides with the onset of tunneling conduction, and with the onset of the low‐current valley region of the current‐voltage (I‐V) characteristic. The simulation demonstrates the presence of the statistical capture and release of tunneling charged particles by the quantum well, which is similar to the capture and release of electrons by electron traps (defects, etc.). It is proposed that this may represent a novel mechanism for explaining the experimentally observed RTN behavior of large‐area double‐barrier structures since it is not restricted to small‐area devices.
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73.50.Td Noise processes and phenomena
73.40.Gk Tunneling
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Visible electroluminescence from porous silicon diodes with an electropolymerized contact

Nobuyoshi Koshida, Hideki Koyama, Yuko Yamamoto, and George J. Collins

Appl. Phys. Lett. 63, 2655 (1993); http://dx.doi.org/10.1063/1.110411 (3 pages) | Cited 62 times

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An electrochemical technique is proposed to form a solid‐state electrical contact of porous Si (PS) electroluminescence (EL) diodes. The PS layers were created by anodizing nondegenerate p‐type single‐crystal Si wafers in an HF solution, and then electrochemically polymerizing semitransparent conducting polypyrrole films into the PS layer. The current‐voltage characteristics and the voltage and current dependence of the EL intensity were significantly improved in comparison with our experimental PS‐EL diode with a thin Au film contact. Our result suggests that the electrode impregnation into PS is very useful for an efficient and stable EL operation.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
82.35.-x Polymers: properties; reactions; polymerization
81.15.Pq Electrodeposition, electroplating

Dipole relaxation current in n‐type AlxGa1−xAs

L. V. A. Scalvi, L. de Oliveira, E. Minami, and M. Siu‐Li

Appl. Phys. Lett. 63, 2658 (1993); http://dx.doi.org/10.1063/1.110795 (3 pages) | Cited 2 times

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We report for the first time the thermally stimulated depolarization current (TSDC) spectrum for a direct band‐gap AlGaAs sample, where the presence of DX centers is clearly observed by photoconductivity measurements. A TSDC band is obtained, revealing the presence of dipoles, which could be attributed to DX−‐d+ pairs as indeed predicted by O’Reilly [Appl. Phys. Lett. 55, 1409 (1989)]. The data are fitted by relaxation time distribution approach yielding an average activation energy of 0.108 eV. This is the most striking feature of our data, since this energy has approximately the same value of the DX center binding energy.
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71.55.Eq III-V semiconductors
72.40.+w Photoconduction and photovoltaic effects
72.80.Ey III-V and II-VI semiconductors

Optoelectronic applications of porous polycrystalline silicon

Nader M. Kalkhoran, Fereydoon Namavar, and H. Paul Maruska

Appl. Phys. Lett. 63, 2661 (1993); http://dx.doi.org/10.1063/1.110412 (3 pages) | Cited 13 times

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We report visible light emission from porous structures formed in bulk and thin‐film polycrystalline silicon materials by anodic etching in an HF:ethanol solution. Our results indicate photoluminescence (PL) peaks at wavelengths between 650 and 655 nm and with intensities comparable to those typically obtained from porous samples of single‐crystal silicon. The analyses of the surface morphology of porous polycrystalline silicon (PPSI) layers suggest that the etch rate could be preferentially greater at the grain boundaries. We have illuminated PPSI films formed on quartz substrates from both the front and rear of the samples and have measured PL emission from the same corresponding sides. Luminescent polycrystalline silicon films offer the possibility of integrating a novel Si‐based flat‐panel display along with the recently developed thin‐film transistor (TFT) driver circuitry on a glass substrate. In addition, nanostructures originating from polycrystalline silicon substrates may enable low‐cost fabrication of highly efficient photovoltaic cells.
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78.55.Hx Other solid inorganic materials
78.60.Fi Electroluminescence
85.60.Jb Light-emitting devices
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