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8 Nov 1993

Volume 63, Issue 19, pp. 2591-2704

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Observation of deep levels in undoped GaSb grown by molecular beam epitaxy

Eiichi Kuramochi, Naoto Kondo, Yoshifumi Takanashi, and Masatomo Fujimoto

Appl. Phys. Lett. 63, 2664 (1993); http://dx.doi.org/10.1063/1.110413 (3 pages) | Cited 9 times

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Deep levels in undoped GaSb grown by molecular beam epitaxy are investigated with the deep level transient spectroscopy method. The measurements are performed on diodes consisting of undoped and Te‐doped GaSb layers. Three hole traps are detected in the undoped GaSb, the activation energies of shallowest and deepest traps being 0.25 and 0.63 eV, respectively. The depth profile of trap concentration suggests that the origin of these two traps is related to native defects or interdiffusion of Te from n+ layer. The capture cross sections of these traps are also measured by using the filling pulse technique.  
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71.55.Eq III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Fowler–Nordheim tunneling current in a Mg/polycrystalline Si oxide/n+ polycrystalline Si metal‐oxide‐silicon structure

Sik On Kong and Chee Yee Kwok

Appl. Phys. Lett. 63, 2667 (1993); http://dx.doi.org/10.1063/1.110414 (3 pages)

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Fowler–Nordheim tunneling from a Mg/polycrystalline silicon oxide/n+ polycrystalline silicon structure has been studied. The Fowler–Nordheim tunneling barrier height is greatly reduced using Mg as the cathode instead of monocrystalline silicon (denoted by Si) or polycrystalline silicon (denoted by polycrystalline Si). A minimum value of 0.94 eV is observed after sintering the sample in N2 at 260 °C for 185 min. The tunneling from the n+ polycrystalline Si side of the structure is also enhanced by the sharp point effect. This may have applications in electrically erasable read only memory, where a lower programing voltage, faster programing time, and enhanced endurance to repeated programing is desirable.
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73.40.Gk Tunneling
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Tv Field effect devices

Photocurrent reversal induced by localized continuum resonances in asymmetric quantum semiconductor structures

Carlo Sirtori, Jerome Faist, Federico Capasso, Deborah L. Sivco, and Alfred Y. Cho

Appl. Phys. Lett. 63, 2670 (1993); http://dx.doi.org/10.1063/1.110415 (3 pages) | Cited 5 times

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A new type of photoconductivity controlled by the wave function of the excited state is reported in suitably engineered asymmetric quantum well heterostructures grown by molecular beam epitaxy. This phenomenon manifests itself in directional charge transfer against the applied electric field as electrons in the wells are photoexcited to resonances localized above the barriers.
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73.50.Pz Photoconduction and photovoltaic effects
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Observation of optically detected magnetic resonance in GaN films

E. R. Glaser, T. A. Kennedy, H. C. Crookham, J. A. Freitas, M. Asif Khan, D. T. Olson, and J. N. Kuznia

Appl. Phys. Lett. 63, 2673 (1993); http://dx.doi.org/10.1063/1.110416 (3 pages) | Cited 27 times

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Optically detected magnetic resonance has been observed from GaN. Two magnetic resonances have been detected on the 2.2 eV‐deep photoluminescence band. The first resonance is sharp [full width at half‐maximum (FWHM) ∼2.2 mT] with g∥=1.9515±0.0002 and g⊥=1.9485±0.0002 and is assigned to conduction electrons, in agreement with recent electron paramagnetic resonance (EPR) studies of similar samples. The second feature, which has not been seen by EPR, is much broader (FWHM∼13 mT) with g∥=1.989±0.001 and g⊥=1.992±0.001. These parameters indicate a deep state. A tentative assignment is made to a deep state associated with the N vacancy.  
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71.55.Eq III-V semiconductors
76.70.Hb Optically detected magnetic resonance (ODMR)
78.55.Cr III-V semiconductors

Schottky barrier on n‐type GaN grown by hydride vapor phase epitaxy

P. Hacke, T. Detchprohm, K. Hiramatsu, and N. Sawaki

Appl. Phys. Lett. 63, 2676 (1993); http://dx.doi.org/10.1063/1.110417 (3 pages) | Cited 150 times

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A Schottky barrier on unintentionally doped n‐type GaN grown by hydride vapor phase epitaxy was obtained and characterized. Using vacuum evaporated gold as the Schottky barrier contact and aluminum for the ohmic contact, good quality diodes were obtained. The forward current ideality factor was n∼1.03 and the reverse bias leak current below 1×10−10 A at a reverse bias of −10 V. The barrier height ϕBn was determined to be 0.844 and 0.94 eV by current‐voltage and capacitance measurements, respectively.
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73.30.+y Surface double layers, Schottky barriers, and work functions
85.30.Hi Surface barrier, boundary, and point contact devices

Rapid thermal low pressure metalorganic chemical vapor deposition of In0.53Ga0.47As films using tertiarybutylarsine

A. Katz, A. Feingold, N. Moriya, S. J. Pearton, M. Geva, F. A. Baiocchi, L. C. Luther, and E. Lane

Appl. Phys. Lett. 63, 2679 (1993); http://dx.doi.org/10.1063/1.110418 (3 pages) | Cited 1 time

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Rapid thermal low pressure metalorganic chemical vapor deposition (RT‐LPMOCVD) of lattice‐matched epitaxial In0.53Ga0.47As films onto InP substrates was successfully performed using tertiarybutylarsine (TBA) and growth temperatures in the range of 500–550 °C. The undoped, featureless films were grown with a low V:III ratio of 2, and exhibited an excellent morphology with a minimum backscattering yield (χmin) of 3.6% and narrow x‐ray full width at half‐maximum peak of 28 arcsec of the InGaAs layer on InP, reflecting a lattice mismatch of 0.02%. These films presented good electrical properties, with hole mobility values of about 75 cm2/V S measured at 300 K for nominally undoped layers with p≤5×1015 cm−3.  
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology

Optimization of Ge/C ratio for compensation of misfit strain in solid phase epitaxial growth of SiGe layers

Seongil Im, Jack Washburn, Ronald Gronsky, Nathan W. Cheung, Kin Man Yu, and Joel W. Ager

Appl. Phys. Lett. 63, 2682 (1993); http://dx.doi.org/10.1063/1.110419 (3 pages) | Cited 20 times

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In order to study the strain‐compensation effect by C atoms in solid phase epitaxial (SPE) growth of SiGe alloy layers, C sequential implantation was performed in [100] oriented Si substrates with various doses after high dose (5×1016/cm2) Ge implantation. When the nominal peak concentration of implanted C was over 0.55 at. % in the present sample series, misfit dislocation generation in the epitaxial layer was considerably suppressed. A SiGe alloy layer with 0.9 at. % C peak concentration under a 12 at. % Ge peak shows the greatest improved crystallinity compared to layers with smaller C peak concentrations. The experimental results, combined with a simple model calculation, indicate that the optimum Ge/C ratio for strain compensation is between 11 and 22.
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81.15.Np Solid phase epitaxy; growth from solid phases
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.uf Ge and Si

Si and N dangling bond creation in silicon nitride thin films

W. L. Warren, J. Robertson, and J. Kanicki

Appl. Phys. Lett. 63, 2685 (1993); http://dx.doi.org/10.1063/1.110420 (3 pages) | Cited 20 times

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We observe the simultaneous creation of paramagnetic Si and N dangling bonds when N‐rich silicon nitride thin films are optically illuminated at low temperatures (110 K). Generally, only the Si dangling bond is observed if the illumination is performed at room temperature. In contrast, the N dangling bond is metastable, and has previously only been observed after a high temperature post‐deposition anneal and followed by illumination. We propose that the low temperature illumination causes two processes: (1) Charge conversion of N3≡Si+ and N3≡Si− sites to give two N3≡Si⋅dangling bonds, and (2) charge transfer between Si2=N− and N3≡Si+ sites to form Si2=N⋅ and N3≡Si⋅dangling bonds.
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61.72.J- Point defects and defect clusters
71.55.Jv Disordered structures; amorphous and glassy solids
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Roughness at the interface of thin InP/InAs quantum wells

M. J. S. P. Brasil, R. E. Nahory, M. C. Tamargo, and S. A. Schwarz

Appl. Phys. Lett. 63, 2688 (1993); http://dx.doi.org/10.1063/1.110421 (3 pages) | Cited 15 times

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We investigated the interface roughness of InP/As quantum wells using photoluminescence and secondary ion mass spectroscopy. Typical photoluminescence spectra consist of multiple lines. The energies of the observed peaks have a remarkable behavior; namely, both the peak energies and the separations between peaks change from sample to sample. We discuss the interpretation of the observed emission lines in connection with questions such as interface roughness, island formation and lateral confinement. We also discuss the strong influence of parameters such as the growth temperature and the substrate orientation on the interface roughness.
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68.55.-a Thin film structure and morphology
78.55.Cr III-V semiconductors

Molecular beam epitaxial growth and optical characterization of GaAs/AlxGa1−xAs quantum wells on nominally oriented (111)B GaAs substrates

B. J. García, C. Fontaine, and A. Muñoz‐Yagüe

Appl. Phys. Lett. 63, 2691 (1993); http://dx.doi.org/10.1063/1.110422 (3 pages) | Cited 3 times

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Molecular beam epitaxial growth conditions of GaAs/AlxGa1−xAs quantum wells on nominally oriented (111)B GaAs substrates are reported. Photoluminescence measurements of these structures showed linewidths slightly larger than previously reported for quantum wells grown on (100) and misoriented (111)B substrates, but much lower than observed and reported on nominally oriented (111)B substrates. Good surface morphology and optical properties were obtained by monitoring the specular beam intensity of the reflection high‐energy electron diffraction diagram during growth. Growth interruption at the interfaces was found to be detrimental for substrate temperatures higher than 610 °C.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.66.Fd III-V semiconductors

Ultrathin film deposition of Ba1−xRbxBiO3 by molecular beam epitaxy using distilled ozone

M. Ogihara, T. Makita, and H. Abe

Appl. Phys. Lett. 63, 2694 (1993); http://dx.doi.org/10.1063/1.110397 (3 pages)

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A Ba1−xRbxBiO3 (BRBO) ultrathin film (120 Å) with a zero‐resistance transition temperature of 14 K was deposited on a SrTiO3(110) substrate by molecular beam epitaxy using distilled ozone. The critical current density of 2×105 A/cm2 was achieved in 200‐Å‐thick BRBO thin film, and this observed critical current density is much larger than the previously reported data. The dependence of BRBO film properties on film thickness is studied for the first time.
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74.78.-w Superconducting films and low-dimensional structures
74.70.-b Superconducting materials other than cuprates
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Evidence for step flow growth of Bi‐Sr‐Ca‐Cu‐O thin films on vicinal substrates by metalorganic chemical vapor deposition

Tsunemi Sugimoto, Nobuhiko Kubota, Yuh Shiohara, and Shoji Tanaka

Appl. Phys. Lett. 63, 2697 (1993); http://dx.doi.org/10.1063/1.110398 (3 pages) | Cited 11 times

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Two‐dimensional nuclei and the resulting two‐dimensional islands as well as the steps were observed at the surface of the Bi‐Sr‐Ca‐Cu‐O thin films grown on the vicinal substrates misoriented by 1°, but only the steps were observed at the surface of the films grown on the vicinal substrates misoriented by 5°. The step distance of the films grown on the vicinal substrates misoriented by 1° was longer than those of the films grown on the vicinal substrates misoriented by 5°. The competition between the propagation of the surface steps and the formation of two‐dimensional nuclei can be explained qualitatively by the relation between the step distance and the mean time for surface diffusion of the adsorbing species. These results experimentally indicate that the growth of Bi‐Sr‐Ca‐Cu‐O thin films on vicinal substrates have proceeded in the step flow mode.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
74.78.-w Superconducting films and low-dimensional structures

Highly sensitive YBa2Cu3O7 dc SQUID magnetometer with thin‐film flux transformer

D. Grundler, B. David, R. Eckart, and O. Dössel

Appl. Phys. Lett. 63, 2700 (1993); http://dx.doi.org/10.1063/1.110399 (3 pages) | Cited 17 times

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We have designed and fabricated a thin‐film flux transformer by a YBa2Cu3O7/SrTiO3 (YBCO/STO) multilayer process. The flux transformer consists of a 20‐turn input coil of 10 μm linewidth and a single‐turn pickup loop surrounding an area of 7.5 by 7.5 mm2. All device levels are patterned by standard photolithography and Ar‐ion‐beam etching. The flux transformer has been combined in flip‐chip configuration with the square washer of a low‐noise YBCO dc SQUID. The dc SQUID magnetometer exhibits a magnetic field sensitivity of 1.4 nT/Φ0. The intrinsic white flux noise level of 70μΦ0/√Hz at 77 K is mainly dominated by the SQUID corresponding to a magnetic field resolution of the magnetometer of 100 fT/√Hz for frequencies above 40 Hz. At 1 Hz we measured 200 fT/√Hz. Biomagnetic measurements were performed in a magnetically shielded chamber.
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85.25.Dq Superconducting quantum interference devices (SQUIDs)
74.78.Fk Multilayers, superlattices, heterostructures
74.78.-w Superconducting films and low-dimensional structures

Lower‐temperature plasma etching of Cu films using infrared radiation

N. Hosoi and Y. Ohshita

Appl. Phys. Lett. 63, 2703 (1993); http://dx.doi.org/10.1063/1.110401 (2 pages) | Cited 17 times

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The etching of Cu films is achieved at lower temperature (150 °C) with Cl2 plasma by IR light radiation. Anisotropic fine Cu patterns are obtained. The etch rate is 4000 Å/min and there are no microloading effects. It is considered that the etching temperature lowering and the anisotropy are realized by the IR light enhancement of CuClx desorption.  
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81.05.Bx Metals, semimetals, and alloys
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
82.50.Bc Processes caused by infrared radiation
82.50.Hp Processes caused by visible and UV light
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