APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

12 Jul 1993

Volume 63, Issue 2, pp. 123-271

Page 1 of 3 Pages Next Page | Jump to Page

Epitaxial LiTaO3 thin films by pulsed laser deposition

John A. Agostinelli, Gabriel H. Braunstein, and Thomas N. Blanton

Appl. Phys. Lett. 63, 123 (1993); http://dx.doi.org/10.1063/1.110374 (3 pages) | Cited 55 times

Full Text: | Download PDF

Show Abstract
Epitaxial LiTaO3 thin films having excellent crystalline properties have been achieved on (0001)‐sapphire substrates using the technique of pulsed laser deposition. X‐ray diffraction analysis revealed that completely single‐phase c‐oriented LiTaO3 films were produced. X‐ray rocking curve analysis showed that the range of misalignment of the c‐axis direction was about 0.2°. Ion channeling studies indicated a minimum backscattering yield of only 4.9%. Channeling also revealed an improvement in crystalline perfection as a function of distance above the interface with the sapphire substrate. Optical waveguiding with losses on the order of 1 dB/cm was demonstrated.
Show PACS
81.15.Fg Pulsed laser ablation deposition
68.55.-a Thin film structure and morphology
78.66.Nk Insulators
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Optical emission from the laser‐induced plasma during excimer laser etching of diamondlike carbon films

Jayshree Seth, R. Padiyath, and S. V. Babu

Appl. Phys. Lett. 63, 126 (1993); http://dx.doi.org/10.1063/1.110375 (3 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
Optical emission from the laser‐induced plasma plume produced during KrF (248 nm) excimer laser etching of diamondlike carbon films has been characterized. The emission spectrum in the visible and UV wavelength regions is dominated by the C2 Swan bands (d3Πg−a3Πu), CN violet bands (B2 Σ+−X2 Σ+), and a continuum emission in the 500–700 nm range. The emission intensities of the major bands are a strong function of film density. Higher emission intensities are observed during the etching of low‐density films. The molecular vibrational temperatures for C2 and CN radicals, calculated from the emission intensities, are in the range of 10 000–20 000 K.
Show PACS
81.65.-b Surface treatments
79.20.Ds Laser-beam impact phenomena
52.25.Os Emission, absorption, and scattering of electromagnetic radiation

Quantum size effect on optical absorption edge in thin antimony films

J. H. Xu and C. S. Ting

Appl. Phys. Lett. 63, 129 (1993); http://dx.doi.org/10.1063/1.110376 (3 pages) | Cited 7 times

Full Text: | Download PDF

Show Abstract
The quantum size effect in thin antimony films grown along (111) direction on a GaSb substrate is studied based on a simple model. The critical film thickness, at which the semimetal‐semiconductor transition takes place, is determined. It is proposed that the optical experiments can be used to measure the critical thickness since the dependence of optical transition on thickness in the semimetal region is very different from that in semiconductor region.
Show PACS
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.Db Elemental semiconductors and insulators

Pulse broadening in picosecond amplification by a 1.3 μm InGaAsP traveling‐wave amplifier

Hai‐Feng Liu, Masaki Tohyama, Takeshi Kamiya, and Masato Kawahara

Appl. Phys. Lett. 63, 132 (1993); http://dx.doi.org/10.1063/1.110377 (3 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
Pulse broadening is observed for the amplification of a 2.2 ps pulse by a semiconductor laser traveling‐wave amplifier when the input pulse energy is well below the saturation energy of the amplifier. The broadening is found to be much larger than that predicted on the basis of homogeneous gain saturation. It is shown from a traveling‐wave rate equation simulation that the nonlinear gain compression is responsible for such a large temporal broadening.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Rz Doped-insulator lasers and other solid state lasers
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Very short intracavity directional coupler for high‐speed communication

Giora Griffel

Appl. Phys. Lett. 63, 135 (1993); http://dx.doi.org/10.1063/1.110794 (3 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
We propose a novel intracavity modulator/switch that consists of a directional‐coupler located inside a Fabry–Perot cavity. The back mirror of the cavity has a unit reflectivity so that both input and output signals are at the same side. In this way we obtain a two‐port, single side element, with coupling length of 83.5 μm, which is the shortest modulation coupler proposed so far. The upper frequency limit due to photon lifetime is 275 GHz, which is well over the bandwidth constraints of microwave lumped structures. A unified approach for the analysis of this device and other similar structures is presented and discussed.
Show PACS
42.79.Gn Optical waveguides and couplers
42.79.Hp Optical processors, correlators, and modulators
42.82.Et Waveguides, couplers, and arrays

Pure linear polarization imaging in near field scanning optical microscopy

M. Vaez‐Iravani and R. Toledo‐Crow

Appl. Phys. Lett. 63, 138 (1993); http://dx.doi.org/10.1063/1.110378 (3 pages) | Cited 19 times

Full Text: | Download PDF

Show Abstract
The design and theory of operation of a new form of near field polarizing optical microscope are presented. The system uses electro‐optic premodulation of light to generate two simultaneous complementary images of samples. This affords the capability to obtain a final output signal which is a linear representation of the sample birefringence, and is independent of the sample transmissivity/reflectivity. A number of images are presented.
Show PACS
07.60.Pb Conventional optical microscopes

Resonant‐cavity GaAs/InGaAs/AlAs photodiodes with a periodic absorber structure

F. Y. Huang, A. Salvador, X. Gui, N. Teraguchi, and H. Morkoç

Appl. Phys. Lett. 63, 141 (1993); http://dx.doi.org/10.1063/1.110379 (3 pages) | Cited 7 times

Full Text: | Download PDF

Show Abstract
Resonant‐cavity photodiodes with a periodic absorber structure are demonstrated. The photodiode consists of three thin InGaAs absorbing layers located at the antinodes of standing wave optical field in a resonant cavity. The bottom mirror of the resonant cavity is formed by a GaAs/AlAs quarter‐wave stack, while the top mirror is formed by the GaAs/air interface. Theoretical estimation based on the standing wave effect gives 70% peak quantum efficiency at the resonant wavelength. The peak quantum efficiency of this photodiode, as measured by a calibrated Si photodetector, enhanced by 30% as compared to a conventional resonant‐cavity photodiode with a single absorbing layer of the same overall thickness. The observed enhancement in quantum efficiency is consistent with theory.
Show PACS
85.60.Gz Photodetectors (including infrared and CCD detectors)
85.60.Dw Photodiodes; phototransistors; photoresistors
78.66.Fd III-V semiconductors

Etch mechanism in the low refractive index silicon nitride plasma‐enhanced chemical vapor deposition process

Yue Kuo

Appl. Phys. Lett. 63, 144 (1993); http://dx.doi.org/10.1063/1.110380 (3 pages) | Cited 16 times

Full Text: | Download PDF

Show Abstract
In this letter the author reports a generalized mechanism for the plasma‐enhanced chemical vapor deposition silicon nitride process which includes simultaneous surface deposition and etching reactions. The etching mechanism is caused by the hydrogen plasma in combination with the high plasma potential. For each deposition versus power or refractive index versus power curve there is a critical point which is determined by the critical power Wcritical. When the power is lower than Wcritical, the process can be explained by conventional deposition mechanisms. When the power is higher than Wcritical, the hydrogen etching mechanisms becomes important. Wcritical depends on other process parameters such as the composition of the feeding stream. Experimental results confirmed the hydrogen etching mechanism, which is selective.
Show PACS
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Scanning surface harmonic microscopy of self‐assembled monolayers on gold

W. Mizutani, B. Michel, R. Schierle, H. Wolf, and H. Rohrer

Appl. Phys. Lett. 63, 147 (1993); http://dx.doi.org/10.1063/1.110381 (3 pages) | Cited 8 times

Full Text: | Download PDF

Show Abstract
Adsorption of self‐assembled monolayers on gold surfaces greatly enhances the local probe‐induced third‐harmonic (TH) generation at microwave frequency. At a given location the TH signal is, as a function of gap distance, proportional to the tunneling current. A constant TH signal image of self‐assembled monolayers made from 11‐mercaptoundecanol shows the same depression pattern with similar resolution as that obtained with tunneling microscopy. The tunneling current remains constant across the depressions at constant TH signal. However, the TH signal is enhanced on certain protrusions of the monocomponent layers and on net‐like patterns on the layers made from mixtures of perfluorononanoyl‐2‐mercaptoethylamide and 1‐mercaptododecane.
Show PACS
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
68.35.B- Structure of clean surfaces (and surface reconstruction)
78.66.Qn Polymers; organic compounds

Observation of C60 cage opening on Si(111)‐(7×7)

M. Balooch and A. V. Hamza

Appl. Phys. Lett. 63, 150 (1993); http://dx.doi.org/10.1063/1.110382 (3 pages) | Cited 24 times

Full Text: | Download PDF

Show Abstract
The ‘‘opening’’ of C60 on Si(111)‐(7×7) has been directly observed by scanning tunneling microscopy and correlated with Auger electron spectroscopy (AES) and temperature‐programmed desorption spectroscopy. Isolated C60 clusters are observed on Si(111)‐(7×7) after annealing the surface to 620 K. Annealing the surface to 1020 K causes the C60 cages to open and thereby cover more of the surface. Also evident is that the opened clusters agglomerate on the surface. The opening of the C60 cage is correlated with an increase in the amount of silicon—carbon bonding and with the increase in the carbon‐to‐silicon AES peak height ratio with increasing annealing temperature. The ratio increases since the opened cages cover more of the substrate silicon atoms, reducing AES emission from the substrate.
Show PACS
61.46.-w Structure of nanoscale materials
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy

Preparation of oriented PbTiO3 thin films using a spin‐on sol‐gel process

Mark D. Carper and Pradeep P. Phulé

Appl. Phys. Lett. 63, 153 (1993); http://dx.doi.org/10.1063/1.110383 (3 pages) | Cited 24 times

Full Text: | Download PDF

Show Abstract
A novel sol‐gel process for the preparation of grain‐oriented thin films of PbTiO3 is reported. Using a moisture tolerant molecularly modified titanium isopropoxide and hydrated lead acetate PbTiO3 films with both c‐ and a‐axis orientations could be prepared on platinized silicon substrates at 550 °C. The average grain size of films prepared at 600 °C was ≊0.1 μm. The a‐axis orientation increased with further heat treatment at temperatures between 600 and 700 °C. The relative changes in the thin film orientation may be due to thin films stresses caused by thermal expansion mismatch existing during cooling through the Curie transition temperature.
Show PACS
81.15.Rs Spray coating techniques
77.55.-g Dielectric thin films

Determination of the lateral periodicity of nanometer quantum dot arrays by triple crystal diffractometry

B. Jenichen, K. Ploog, and O. Brandt

Appl. Phys. Lett. 63, 156 (1993); http://dx.doi.org/10.1063/1.110384 (3 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
The lateral periodicity of InAs quantum dot arrays in a GaAs matrix consisting of submonolayer InAs films grown by molecular beam epitaxy on a terraced (001) GaAs substrate was measured in the differential rocking curve by triple crystal diffractometry. The x‐ray diffraction of the array is described in the frame of the kinematical theory. Both the changes in the scattering factor and the tetragonal deformations due to the InAs quantum dots are taken into account. The limits of the description assuming an ideal array are estimated using the Laue interference function. The lateral periodicity of the array along [100] is 11 nm compared with 10 nm obtained from the miscut of the sample. This ideal lateral periodicity extends along [100] over about 10 cells of the array corresponding to 0.1 μm.
Show PACS
61.05.cf X-ray scattering (including small-angle scattering)
61.05.cj X-ray absorption spectroscopy: EXAFS, NEXAFS, XANES, etc.
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.55.-a Thin film structure and morphology

Conformal chemical beam deposition of thin metal film for fabricating high density trench capacitor cells

David S. Y. Hsu and Henry F. Gray

Appl. Phys. Lett. 63, 159 (1993); http://dx.doi.org/10.1063/1.110385 (3 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
The difficult aspect of conformal metal film deposition in narrow, high aspect ratio trenches such as those used in the fabrication of high density metal‐oxide‐semiconductor trench capacitor cells for computer memory technology is addressed. This work demonstrates the proof of principle of highly conformal deposition of a 40 nm Pt film on the surfaces of a 0.5‐μm‐wide, 1.5‐μm‐deep, and 2‐mm‐long array of oxidized silicon trenches, using the thermal decomposition of a molecular precursor under chemical beam conditions. In addition, scanning electron, x‐ray photoelectron, and scanning Auger electron microscopy analyses reveal highly uniform and complete coverage on all surfaces, small metal grain size, and the absence of detectable impurities.
Show PACS
85.30.Tv Field effect devices
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Analysis of SiH vibrational absorption in amorphous SiOx:H (0≤x≤2.0) alloys in terms of a charge‐transfer model

L. He, Y. Kurata, T. Inokuma, and S. Hasegawa

Appl. Phys. Lett. 63, 162 (1993); http://dx.doi.org/10.1063/1.110386 (3 pages) | Cited 19 times

Full Text: | Download PDF

Show Abstract
Amorphous SiOx:H films were deposited at 300 °C by rf glow discharge of SiH4‐O2 mixtures, and the SiH stretching vibrational absorption was investigated as a function of the oxygen content x. The absorption profiles were examined on the basis of the random‐bonding model (RBM). The length dSiH of SiH bonds in four H‐Si (Si3−nOn) bonding units was examined in terms of a charge‐transfer model, using the Sanderson’s electronegativity. Using these dSiH values, the peak wave numbers for the four components were found to be 2000, 2108, 2195, and 2260 cm−1, in agreement with the experimental ones determined on the basis of the RBM.
Show PACS
61.43.-j Disordered solids
78.66.Jg Amorphous semiconductors; glasses
68.55.Nq Composition and phase identification

Correlating optical absorption and thermal conductivity in diamond

Donald T. Morelli and Ctirad Uher

Appl. Phys. Lett. 63, 165 (1993); http://dx.doi.org/10.1063/1.110387 (3 pages) | Cited 11 times

Full Text: | Download PDF

Show Abstract
The presence of defects in diamond induces one‐phonon infrared absorption which is not allowed in the perfect crystal due to symmetry. Concomitantly the thermal conductivity is reduced by additional phonon‐defect scattering. For single crystal diamonds irradiated with fast neutrons, we find a correlation between the one‐phonon absorption and the room‐temperature thermal conductivity valid over three orders of magnitude in defect concentration. This relation holds for both unannealed and annealed crystals for which the detailed configuration of defects is different, as well as for a synthetic diamond film containing a similar type of disorder. Infrared absorption can thus be used to determine the thermal conductivity of diamonds containing vacancy‐related defect centers.
Show PACS
66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves
61.72.J- Point defects and defect clusters
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
61.80.Hg Neutron radiation effects

Luminescence studies on porous silicon

Y. M. Weng, Zh. N. Fan, and X. F. Zong

Appl. Phys. Lett. 63, 168 (1993); http://dx.doi.org/10.1063/1.110388 (3 pages) | Cited 34 times

Full Text: | Download PDF

Show Abstract
We have observed a redshift process of luminescence wavelength in an as‐prepared porous silicon layer. Si—H bonds of a significant concentration are gradually replaced by Si—O bonds when porous silicon is exposed to air at room temperature, which coincides well with desorption of hydrogen from the silicon surface. SiH2 termination plays an important role in the emission process, and the surface passivation of the porous silicon layer is important to get effective and stable luminescence.  
Show PACS
78.55.Hx Other solid inorganic materials
73.20.Hb Impurity and defect levels; energy states of adsorbed species
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors

Nearly isotropic etching of 6H‐SiC in NF3 and O2 using a remote plasma

B. P. Luther, J. Ruzyllo, and D. L. Miller

Appl. Phys. Lett. 63, 171 (1993); http://dx.doi.org/10.1063/1.110389 (3 pages) | Cited 15 times

Full Text: | Download PDF

Show Abstract
Nearly isotropic etching of the 6H‐SiC carbon face has been achieved in a remote plasma at 330 °C using a mixture of O2 and NF3 in argon. Using evaporated aluminum as a mask, undercutting has been observed to a distance equal to the etch depth. The etch rate is a function of the ratio of O2 to NF3 flow rates and of temperature, peaking strongly to 220 nm/min at 82% oxygen for 330 °C. Smooth surfaces were obtained for gas ratios leading to the maximum etch rate, and also for a NF3‐argon mixture, with significant roughening observed for other O2‐NF3‐argon mixtures. In the absence of a practical wet etch for SiC, this procedure is promising for isotropic etching in SiC device processing.
Show PACS
81.65.-b Surface treatments
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
85.40.Hp Lithography, masks and pattern transfer

Novel charge injection transistors with heterojunction source (launcher) and drain (blocker) configurations

H. Tian, K. W. Kim, and M. A. Littlejohn

Appl. Phys. Lett. 63, 174 (1993); http://dx.doi.org/10.1063/1.110390 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
The results of a theoretical study of novel charge injection transistors (CHINTs) with heterojunction source and drain are presented. The proposed device structures employ a wide band‐gap (with respect to the channel) material as the device source and/or drain regions, in contrast to the conventional, homojunction source (drain) CHINT structure. It is demonstrated that the spatial location of real‐space transfer (RST) is strongly dependent on the initial energy of injected electrons in these devices. The introduction of source and drain heterojunctions serves for enhancing the RST effect and for the blocking electrons which constitute leakage current. Results from two‐dimensional, self‐consistent ensemble Monte Carlo simulations reveal that the proposed CHINTs feature increased current drive capability, reduced drain leakage current, and faster switching speed.
Show PACS
85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Novel amorphous silicon doping superlattice device with bidirectional S‐shaped negative differential characteristics

C. R. Liu, Y. K. Fang, K. H. Chen, J. D. Hwang, and L. C. Kuo

Appl. Phys. Lett. 63, 177 (1993); http://dx.doi.org/10.1063/1.110391 (3 pages)

Full Text: | Download PDF

Show Abstract
A novel amorphous silicon doping superlattice device with bidirectional S‐shaped negative‐differential characteristics has been fabricated and investigated experimentally. The occurrence of the S‐shaped switching phenomenon is caused by the potential redistribution due to the avalanche multiplication process. The experimental results are demonstrated and the electronic transport theory is proposed in this letter.
Show PACS
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Gk Tunneling
73.61.Jc Amorphous semiconductors; glasses

On the transport mechanism in porous silicon

J. J. Mareš, J. Krištofik, J. Pangrác, and A. Hospodková

Appl. Phys. Lett. 63, 180 (1993); http://dx.doi.org/10.1063/1.110392 (3 pages) | Cited 19 times

Full Text: | Download PDF

Show Abstract
We have measured the temperature dependence of dark conductance of porous silicon (PS) in the range between 200 and 300 K. It is possible to interpret the observed Berthelot type dependence as the surface conductance controlled by the tunneling through a thermally vibrating barrier.
Show PACS
72.20.Fr Low-field transport and mobility; piezoresistance
72.80.Jc Other crystalline inorganic semiconductors
73.25.+i Surface conductivity and carrier phenomena

Study of photogenerated charge carrier dispersion in chlorinated a‐Se:0.3%As by the interrupted field time‐of‐flight technique

B. Polischuk, S. O. Kasap, and A. Baillie

Appl. Phys. Lett. 63, 183 (1993); http://dx.doi.org/10.1063/1.110393 (3 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
Dispersion of photogenerated charge carriers due to their mutual Coulombic repulsion hitherto has been neglected in considering the spread of the photocurrent in a typical drift mobility experiment such as the time‐of‐flight transient photoconductivity measurement. Interrupted field time‐of‐flight experiments carried out on a high‐resistivity semiconductor material (a‐Se) with a well‐defined mobility clearly show that the overwhelming mechanism for the dispersion of the charge packet in the absence of an applied field is due to Coulombic repulsion. Dispersion is directly proportional to time and the amount of photogenerated charge and puts a lower limit to the resolution of photodetector devices operating in the constant mobility regime.
Show PACS
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.40.+w Photoconduction and photovoltaic effects
72.80.Ey III-V and II-VI semiconductors

Electron transport in strained Si layers on Si1−xGex substrates

Th. Vogelsang and K. R. Hofmann

Appl. Phys. Lett. 63, 186 (1993); http://dx.doi.org/10.1063/1.110394 (3 pages) | Cited 62 times

Full Text: | Download PDF

Show Abstract
Results on the in‐plane electron drift velocities and mobilities in strained Si layers grown on Si1−xGex substrates are reported for 300 and 77 K. High‐field drift velocities are calculated by Monte Carlo simulations and low‐field mobilities by numerical solution of Boltzmann’s equation including intra‐ and intervalley phonon and impurity scattering mechanisms. Significant improvements of drift velocities relative to bulk Si are found for electric fields up to several 10 kV/cm, while saturation occurs at the bulk values for both temperatures. A much stronger mobility enhancement of 74% is obtained at 300 K compared to 36% at 77 K, which is consistent with recent experimental results.
Show PACS
73.50.Dn Low-field transport and mobility; piezoresistance
73.50.Fq High-field and nonlinear effects
73.61.Cw Elemental semiconductors

Lifetime measurements on silicon‐on‐insulator wafers

J. L. Freeouf, N. Braslau, and M. Wittmer

Appl. Phys. Lett. 63, 189 (1993); http://dx.doi.org/10.1063/1.110395 (2 pages) | Cited 2 times

Full Text: | Download PDF

Show Abstract
We report noncontact measurements of the effective minority carrier lifetime in the superficial silicon layer of silicon‐on‐insulator wafers. The carriers are excited by a pulse of short‐wavelength photons (λ≤350 nm), all of which are absorbed in the first 500 Å of the silicon layer. The carriers are detected by the change in microwave reflectance in a resonant circuit to which the wafer is coupled. The results obtained vary from ∼3 μs for a three year old separation by implanted oxygen (SIMOX) wafer to ∼25 μs for current vendor SIMOX and bond‐etchback samples. The variation in free surface recombination velocity is eliminated by HF passivating the samples prior to measurement.
Show PACS
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.40.Ty Semiconductor-insulator-semiconductor structures

Deep hole trap properties of p‐type ZnSe grown by molecular beam epitaxy

K. Ando, Y. Kawaguchi, T. Ohno, A. Ohki, and S. Zembutsu

Appl. Phys. Lett. 63, 191 (1993); http://dx.doi.org/10.1063/1.110396 (3 pages) | Cited 17 times

Full Text: | Download PDF

Show Abstract
The characteristics of deep hole traps in p‐type ZnSe are studied by means of a transient capacitance spectroscopy technique. p‐type ZnSe layers were grown by molecular beam epitaxy using radical N2 (nitrogen) doping. A major deep hole trap with a thermal hole activation energy of ΔE=720±30 meV is detected for two different sample structures: (a) n+‐p ZnSe diodes and (b) Au‐p ZnSe double‐Schottky diodes. The trap concentration tends to increase as the net acceptor (N) concentration increases. The deep hole trap has revealed an exponential temperature dependence of hole capture rates, indicating a strong electron‐lattice coupling in carrier capture/emission processes.
Show PACS
71.55.Gs II-VI semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Relationship between growth conditions, nitrogen profile, and charge to breakdown of gate oxynitrides grown from pure N2O

Yoshio Okada, Philip J. Tobin, Vikas Lakhotia, William A. Feil, Sergio A. Ajuria, and Rama I. Hegde

Appl. Phys. Lett. 63, 194 (1993); http://dx.doi.org/10.1063/1.110400 (3 pages) | Cited 47 times

Full Text: | Download PDF

Show Abstract
We studied the relationship between the growth conditions, the nitrogen profile, and the charge to breakdown of N2O oxynitrides grown in a RTP and in a conventional furnace. RTP oxynitride shows nitrogen accumulation at the Si/SiO2 interface. On the other hand, furnace oxynitride shows almost uniform nitrogen distribution in the bulk, resulting in poor charge to breakdown characteristics. We find that two‐step oxynitridation processes provide nitrogen accumulation at the Si/SiO2 interface and result in better electrical properties than those of one‐step oxynitrides.
Show PACS
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.65.-b Surface treatments
68.35.Fx Diffusion; interface formation
Page 1 of 3 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close