APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

15 Nov 1993

Volume 63, Issue 20, pp. 2717-2844

Page 1 of 2 Pages Next Page | Jump to Page

Study of passive mode locking of semiconductor lasers using time‐domain modeling

Wei Yang and Anand Gopinath

Appl. Phys. Lett. 63, 2717 (1993); http://dx.doi.org/10.1063/1.110364 (3 pages) | Cited 12 times

Full Text: | Download PDF

Show Abstract
Large signal dynamics of passive mode locking of semiconductor lasers is studied in the time domain. A two‐section structure is modeled by numerical evaluation of the traveling wave rate equations. The results show simultaneous occurrence of mode locking and self‐pulsation over a large parameter range. Typical transient time for mode locking is about 0.2–1.0 ns, and pulse widths of 1.5–8 ps are observed.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking

Observation of birefringence induced by intersubband transitions in quantum wells

Gilad Almogy, Ali Shakouri, and Amnon Yariv

Appl. Phys. Lett. 63, 2720 (1993); http://dx.doi.org/10.1063/1.110365 (3 pages) | Cited 7 times

Full Text: | Download PDF

Show Abstract
We present a direct measurement of the birefringence induced by the intersubband transitions in quantum wells. Phase delays of up to 40° were observed in our samples, corresponding to a 0.07 difference in the index of refraction between the polarizations parallel and perpendicular to the plane of the wells in a GaAs/AlGaAs silicon‐doped structure. The measurement was conducted at several wavelengths—enabling us to deduce the total linear birefringence near the absorption resonance. The observed birefringence is in close agreement with the Kramers–Kronig transform of the absorption spectra.
Show PACS
78.66.Fd III-V semiconductors
42.25.Lc Birefringence
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Pseudomorphic separate confinement heterostructure blue‐green diode lasers

D. C. Grillo, Y. Fan, J. Han, L. He, R. L. Gunshor, A. Salokatve, M. Hagerott, H. Jeon, A. V. Nurmikko, G. C. Hua, and N. Otsuka

Appl. Phys. Lett. 63, 2723 (1993); http://dx.doi.org/10.1063/1.110366 (3 pages) | Cited 17 times

Full Text: | Download PDF

Show Abstract
The growth and performance of pseudomorphic separate confinement heterostructure blue‐green laser diodes are described. The devices incorporate the (Zn,Mg)(S,Se) quaternary as cladding layers surrounding a Zn(S,Se) waveguiding layer, and having single or multiple quantum wells of (Zn,Cd)Se. Devices have been operated at room temperature under pulsed conditions (∼1 μs, 10−3 duty cycle) for periods up to 1 h. X‐ray rocking curve full width at half‐maxima as low as 44 arcsec were obtained for a laser structure employing quaternary cladding layers (Mg=9%, S=12%), consistent with transmission electron microscope observations showing no dislocations or stacking faults. The Zn(Se,Te) graded contact was adapted to form an ohmic contact to the top p‐type quaternary layer.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

All‐fiber traveling‐wave laser with nonreciprocal ring configuration

O. G. Okhotnikov, A. B. Lobo Ribeiro, and J. R. Salcedo

Appl. Phys. Lett. 63, 2726 (1993); http://dx.doi.org/10.1063/1.110341 (3 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
An all‐fiber ring laser geometry in the form of a nonreciprocal S‐ring is presented and demonstrated. Its operation is demonstrated to allow unidirectional laser oscillation. The intensity ratio for laser oscillation in each of the two directions were measured, and found to be larger than 150. This value is the largest such ratio obtained for a ring laser without Faraday isolators.
Show PACS
42.55.Wd Fiber lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Temporally stable hybrid dye‐Ti:sapphire laser by self‐induced gain switching

Z. Y. Peshev and A. D. Deleva

Appl. Phys. Lett. 63, 2729 (1993); http://dx.doi.org/10.1063/1.110342 (3 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
A novel simple Nd:YAG‐laser‐pumped pulsed hybrid dye‐Ti:sapphire laser is described. A spectral linewidth of 0.28 nm is selected near threshold and tuned from 705 to 770 nm in a compact (15‐cm long) cavity. When the threshold is exceeded by a factor of 1–3, the jitter in the onset of the Ti:sapphire laser pulse is reduced to 10 ns. This is about 7% of the 140‐ns jitter for a pure Ti:sapphire laser under equivalent conditions. The result is achieved via accelerated gain switching in the Ti:sapphire induced by intracavity injection of radiation from the dye.
Show PACS
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.-v Laser optical systems: design and operation

Visible InGaP/InGaAlP quantum well top surface emitting laser diodes

Kuochou Tai, Kai‐Feng Huang, Chang‐Cherng Wu, and James D. Wynn

Appl. Phys. Lett. 63, 2732 (1993); http://dx.doi.org/10.1063/1.110343 (3 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
Vertical cavity top surface emitting lasers emitting near 0.67 μm visible spectral region were fabricated by one‐step low pressure metalorganic vapor phase deposition technique. The lasers used four 80‐Å‐thick InGaP/InGaAlP quantum wells active region, sandwiched between two Al0.5Ga0.5As/AlAs distributed Bragg reflectors. Room temperature pulsed threshold current was 10 mA for 15 μm diam devices.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Fluorine implantation induced tapered waveguide interconnect

Sang‐Kook Han, Muthu Subramanian, Sanjai Sinha, and Ramu V. Ramaswamy

Appl. Phys. Lett. 63, 2735 (1993); http://dx.doi.org/10.1063/1.110344 (3 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
We report an index tapered waveguide interconnect facilitating transfer of energy from a multi‐quantum well region to a single‐quantum well region. The adiabatic index tapered structure has been achieved by intermixing of Al/Ga using fluorine implantation induced disordering of GaAs/AlGaAs multi‐quantum wells.
Show PACS
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.79.Gn Optical waveguides and couplers
42.82.Ds Interconnects, including holographic interconnects
61.80.Jh Ion radiation effects

Proton exchanged depth determination in LiNbO3 from laser induced pyroelectric voltage measurements

Suneet Tuli and A. B. Bhattacharyya

Appl. Phys. Lett. 63, 2738 (1993); http://dx.doi.org/10.1063/1.110793 (3 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
We report a new nondestructive technique for the determination of depth of proton exchanged (PE) layers in LiNbO3. Relying on the difference in the magnitudes of measured pyroelectric voltages, induced by an intensity modulated laser beam, on the exchanged and unexchanged regions, the depth of the PE layer has been measured and corroborated by a conventional optical characterization method.
Show PACS
77.70.+a Pyroelectric and electrocaloric effects
42.82.Et Waveguides, couplers, and arrays
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

High stability single‐mode continuous wave photolytic iodine laser

J. H. Hunt, R. H. Burns, P. Roullard, K. C. Widen, and J. M. Stanton

Appl. Phys. Lett. 63, 2741 (1993); http://dx.doi.org/10.1063/1.110320 (3 pages)

Full Text: | Download PDF

Show Abstract
Operation of a high‐efficiency single mode atomic iodine laser is reported. Although the operation of many photodissociation driven iodine laser have been reported recently, few of them deal with single axial and transverse mode operation, presumably due to the loss of output intensity caused by insertion of intracavity optical elements. Our laser system produces continuous wave operation at 420 mW in a transverse electromagnetic (TEM)00 mode. This corresponds to 23% conversion of output power compared to operation in a multimode fashion. The output power is stable over long periods of operation (8 h) with no adjustment of optics or cleaning of reactant supply.
Show PACS
42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.-v Laser optical systems: design and operation

Magneto‐optic buried channel waveguides for a 45° nonreciprocal waveguide rotator

N. Sugimoto, Y. Katoh, and A. Tate

Appl. Phys. Lett. 63, 2744 (1993); http://dx.doi.org/10.1063/1.110321 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
An optical isolation ratio of −21.1 dB at λ=1.55 μm is obtained for a LPE‐grown La and Ga substituted YIG single‐mode buried channel waveguide. Waveguides about 3 mm long end‐butted to single‐mode fibers show an overall insertion loss of less than 2 dB. The Ar ion‐beam etching technique using a three layered etching mask provides sufficient control of both the width (∼4 μm) and height (∼4 μm) of the core ridge. The core and cladding layers are individually grown from melts with different compositions in order to reduce stress‐induced birefringence. The good reproducibility with which 45° waveguide rotators exhibiting a circular near‐field intensity pattern can be fabricated will enable us to realize optical integration in future systems.
Show PACS
42.79.Gn Optical waveguides and couplers
42.82.Et Waveguides, couplers, and arrays
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Optical reflectivity of 3C and 4H‐SiC polytypes: Theory and experiment

W. R. L. Lambrecht, B. Segall, W. Suttrop, M. Yoganathan, R. P. Devaty, W. J. Choyke, J. A. Edmond, J. A. Powell, and M. Alouani

Appl. Phys. Lett. 63, 2747 (1993); http://dx.doi.org/10.1063/1.110322 (3 pages) | Cited 25 times

Full Text: | Download PDF

Show Abstract
Experimental and theoretical optical reflectivity in the range 4–10 eV are reported for the 3C and 4H polytypes of SiC. The calculations used the linear muffin‐tin orbital method and the local density approximation. Good agreement in peak positions and line shape is obtained except for a nearly constant shift of ∼1.00 eV.
Show PACS
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
72.80.Jc Other crystalline inorganic semiconductors
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds
78.40.Ha Other nonmetallic inorganics

Experimental studies of ionization processes in the breakdown phase of a transient hollow cathode discharge

P. Choi, R. Aliaga, B. Blottiere, M. Favre, J. Moreno, H. Chuaqui, and E. Wyndham

Appl. Phys. Lett. 63, 2750 (1993); http://dx.doi.org/10.1063/1.110323 (3 pages) | Cited 12 times

Full Text: | Download PDF

Show Abstract
The ionization process in the prebreakdown phase of a transient hollow cathode discharge (THCD) is investigated. The discharge is operated in H2 and N2 at pressures between 30 and 750 mTorr with applied voltages up to 30 kV. A capacitive probe array is used to measure the spatial and temporal evolution of plasma formation in the interelectrode spacing. The results obtained are consistent with the formation of a moving virtual anode. The growth and evolution of the virtual anode are closely linked to the formation of electron beams emitted from the hollow cathode region before and at the time of electric breakdown.
Show PACS
84.47.+w Vacuum tubes
52.80.-s Electric discharges
52.25.Jm Ionization of plasmas

Nanocrystalline barium titanate: Evidence for the absence of ferroelectricity in sol‐gel derived thin‐layer capacitors

M. H. Frey and D. A. Payne

Appl. Phys. Lett. 63, 2753 (1993); http://dx.doi.org/10.1063/1.110324 (3 pages) | Cited 89 times

Full Text: | Download PDF

Show Abstract
Nanocrystalline BaTiO3 thin‐layer capacitors were integrated onto silicon by sol‐gel processing using alkoxide precursor solutions. 200‐nm‐thick layers were formed and found to be comprised of 25‐nm grains in the cubic perovskite structure. Electrical measurements indicated a lack of polarization‐reversal hysteresis characteristics and Curie–Weiss behavior. The dielectric constant was 230 at room temperature. Properties are discussed in terms of a crystallite size effect. Stable dielectric properties with respect to temperature and voltage suggest that nanocrystalline BaTiO3 could find possible use as an integrated capacitor in decoupling and dynamic random access memory applications.
Show PACS
77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity
84.32.Tt Capacitors
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Local vibrational mode spectroscopy of nitrogen‐hydrogen complex in ZnSe

J. A. Wolk, J. W. Ager, K. J. Duxstad, E. E. Haller, N. R. Taskar, D. R. Dorman, and D. J. Olego

Appl. Phys. Lett. 63, 2756 (1993); http://dx.doi.org/10.1063/1.110325 (3 pages) | Cited 45 times

Full Text: | Download PDF

Show Abstract
Using infrared and Raman spectroscopy, we have observed two local vibrational modes related to H bonded to N acceptors in ZnSe samples grown by metalorganic vapor phase epitaxy. We assign the new mode seen at 3194 cm−1 to a N—H stretching vibrational mode and tentatively assign the mode found at 783 cm−1 to a N—H wagging vibrational mode. Polarized Raman spectroscopy was used to determine that the symmetry of the defect complex is C3 v, which implies that the H atom is in either a bonding or antibonding position.
Show PACS
61.72.uj III-V and II-VI semiconductors
61.72.Yx Interaction between different crystal defects; gettering effect
71.55.Gs II-VI semiconductors

Improved ductility of nanocrystalline Fe73.5Nb3Cu1Si13.5B9 obtained by direct‐current joule heating

P. Allia, P. Tiberto, M. Baricco, and F. Vinai

Appl. Phys. Lett. 63, 2759 (1993); http://dx.doi.org/10.1063/1.110326 (3 pages) | Cited 10 times

Full Text: | Download PDF

Show Abstract
Direct‐current joule heating is exploited to reduce the brittleness of ferromagnetic Fe73.5Nb3Cu1S13.5B9 nanocrystallized from the amorphous state. An ordering process occurring before nanocrystallization is singled out and shown to be responsible for sample embrittlement and magnetic‐permeability degradation. The process is partially avoided by properly choosing the heating conditions. Nanocrystalline ribbon strips having substantially higher ductility than furnace‐annealed samples, and maintaining excellent soft magnetic properties, are easily obtained.
Show PACS
62.20.M- Structural failure of materials
64.70.K- Solid-solid transitions
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
75.50.Bb Fe and its alloys

Ultrafast photon‐mode recording by novel photochromic polymer via photoinduced electron transfer

Toshihiko Nagamura, Hiroshi Sakaguchi, Shigeki Muta, and Toshiaki Ito

Appl. Phys. Lett. 63, 2762 (1993); http://dx.doi.org/10.1063/1.110327 (3 pages) | Cited 20 times

Full Text: | Download PDF

Show Abstract
The color change of a novel photochromic polymer film of 4,4′‐bipyridinium‐tetrakis [3,5‐bis(trifluoromethyl)phenyl]borate was shown to occur in less than 20 ps by the ps‐laser excitation of an ion‐pair charge‐transfer band due to photoinduced electron transfer, which may be applied to ultrafast photon‐mode recording.
Show PACS
78.66.Qn Polymers; organic compounds
78.47.-p Spectroscopy of solid state dynamics
42.70.Jk Polymers and organics

Experimental evidence of different crystalline forms in chemical vapor deposited diamond films

M. Rossi, G. Vitali, M. L. Terranova, and V. Sessa

Appl. Phys. Lett. 63, 2765 (1993); http://dx.doi.org/10.1063/1.110328 (3 pages) | Cited 15 times

Full Text: | Download PDF

Show Abstract
Diamond films have been obtained on Ta polycrystalline substrates from mixtures of methane and hydrogen by the hot‐filament chemical vapor deposition technique. The structural characteristics of the polycrystalline deposits have been investigated by reflection high energy electron diffraction (RHEED), while the surface morphologies have been observed by scanning electron microscopy or carbon replica transmission electron microscopy. For one of the films, the formation of thermal spikes during the deposition process yielded a structure giving a RHEED pattern with d spacings and intensities not corresponding to the already identified carbon and diamond phases. On the base of the RHEED pattern the observed phase has been identified as a face‐centered‐cubic lattice, belonging to the space group F43m and ascribed to a so‐called X‐diamond polytype.
Show PACS
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)

Mössbauer investigations of mechanical alloying in the Fe‐Cu system

J. Z. Jiang, U. Gonser, C. Gente, and R. Bormann

Appl. Phys. Lett. 63, 2768 (1993); http://dx.doi.org/10.1063/1.110329 (3 pages) | Cited 22 times

Full Text: | Download PDF

Show Abstract
A fcc‐Fe50Cu50 solid solution was prepared by mechanical alloying of elemental Fe and Cu powder blends. The alloying process was studied by using x‐ray diffraction and Mössbauer spectroscopy. Initially, the milling process reduced the crystallite sizes of both elemental powders. After 20 h milling, some Fe particles transformed into the fcc structure. Due to the structural similarity of the fcc‐Fe and fcc‐Cu phases, composites consisting of coherent Cu and Fe regions were formed. The increasing density of interfaces during further milling resulted in an interdiffusion of Cu and Fe. The alloying process was monitored by Mössbauer investigations which showed an increasing Fe concentration in fcc Cu. After 50 h of milling, the Mössbauer spectra consisted of a broadened sextet caused by a hyperfine field distribution, which demonstrates that the Fe and Cu were alloyed on an atomic level. These observations are in agreement with a model proposed by C. Gente, M. Oehring, and R. Bormann [Phys. Rev. B 48, 13244 (1993)] describing the formation of unstable alloys by mechanical alloying.
Show PACS
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder
76.80.+y Mössbauer effect; other γ-ray spectroscopy

On the origin of photoluminescence in spark‐eroded (porous) silicon

R. E. Hummel, A. Morrone, M. Ludwig, and S.‐S. Chang

Appl. Phys. Lett. 63, 2771 (1993); http://dx.doi.org/10.1063/1.110792 (3 pages) | Cited 38 times

Full Text: | Download PDF

Show Abstract
Photoluminescence measurements and high‐resolution transmission electron microscopy studies on spark‐treated (porous) silicon have been performed. Contrary to suggestions put forward by others, it has been found that spark erosion does not yield structures comparable to those obtained for irradiated, that is, damaged silica. Instead, evidence is given that spark treatment of single crystalline silicon wafers produces randomly oriented nanometer‐sized silicon crystallites surrounded by a SiO2 matrix. This configuration is believed to be responsible for the observed room temperature visible photoluminescence.
Show PACS
81.65.-b Surface treatments
78.55.Hx Other solid inorganic materials
68.35.B- Structure of clean surfaces (and surface reconstruction)

Optical characterization of porous silicon by synchrotron radiation reflectance spectra analyses

Nobuyoshi Koshida, Hideki Koyama, Yoshiyuki Suda, Yuko Yamamoto, Minoru Araki, Tadashi Saito, Katsuaki Sato, Noriko Sata, and Shik Shin

Appl. Phys. Lett. 63, 2774 (1993); http://dx.doi.org/10.1063/1.110330 (3 pages) | Cited 46 times

Full Text: | Download PDF

Show Abstract
The electronic structure of porous Si(PS) has been characterized by optical reflectance spectra analyses. The reflectance spectra of PS were measured in the photon energy range of 2–27 eV using a synchrotron radiation source. The reflectance at the low energy region was calibrated by the corresponding absolute value which was separately determined from spectroscopic ellipsometry. The spectral response of optical constants were calculated by the Kramers–Kronig analysis. Our results indicate that PS retains some of the characteristic optical features of crystalline Si, and that a blue shift in the absorption edge occurs in PS.
Show PACS
78.55.Hx Other solid inorganic materials
78.66.Li Other semiconductors

Reactive ion etching of gallium nitride in silicon tetrachloride plasmasa)

I. Adesida, A. Mahajan, E. Andideh, M. Asif Khan, D. T. Olsen, and J. N. Kuznia

Appl. Phys. Lett. 63, 2777 (1993); http://dx.doi.org/10.1063/1.110331 (3 pages) | Cited 111 times

Full Text: | Download PDF

Show Abstract
The reactive ion etching characteristics of gallium nitride (GaN) in silicon tetrachloride plasmas (SiCl4, 1:1/SiCl4:Ar, and 1:1/SiCl4:SiF4) in the pressure range between 20 and 80 mTorr have been investigated. For the pressure range investigated, etch rates are found to be essentially identical for the different gas mixtures and also invariant with pressure. However for all gas mixtures, etch rates increased monotonically with increasing plasma self‐bias voltage exceeding 50 nm/min at 400 V. This is one of the highest etch rate ever reported for GaN. Smooth and anisotropic etch profiles are demonstrated for structures of submicrometer dimensions. The slight overcut observed in the etch profiles is attributed to the significant role of physical ion bombardment in the etching mechanism. Auger electron spectroscopy show that a wet etch in dilute HF is needed to clear the Si (in the form of SiOx) embedded in the near surface of GaN during etching thereby restoring etched surfaces to their virgin state.
Show PACS
81.65.-b Surface treatments
85.40.Hp Lithography, masks and pattern transfer
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Time‐resolved photocurrent response of metal‐semiconductor‐metal photodetectors to double‐pulse excitation

M. Klingenstein, J. Kuhl, J. Rosenzweig, C. Moglestue, A. Hülsmann, and Jo. Schneider

Appl. Phys. Lett. 63, 2780 (1993); http://dx.doi.org/10.1063/1.110332 (3 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
The photocurrent response of a GaAs metal‐semiconductor‐metal (MSM) photodetector was measured after excitation with two femtosecond pulses having a variable delay Δt of 0 ps≤Δt≤100 ps. At low excitation densities the influence of the first pulse on the pulse shape of the second is negligible for Δt≥20 ps. This corresponds to a resolvable pulse train of 50 GHz repetition rate for the detectors used in our experiments. The influence of space charge effects at higher excitation density and/or lower bias could be shown.
Show PACS
85.60.Gz Photodetectors (including infrared and CCD detectors)
78.47.-p Spectroscopy of solid state dynamics
73.40.Sx Metal-semiconductor-metal structures

Anomalous conductivity phenomenon and quantum size effects in a new microstructure‐modulated superlattice

Jun Liu and Lianghuan Feng

Appl. Phys. Lett. 63, 2783 (1993); http://dx.doi.org/10.1063/1.110333 (3 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
Quantum size effects such as the modulation of activation energy have been observed and investigated in hydrogenated microcrystalline silicon (μc‐Si:H)/hydrogenated amorphous silicon (a‐Si:H) microstructure‐modulated superlattices. The longitudinal dark conductivity changes anomalously around a temperature in the temperature dependence of the longitudinal dark conductivity for these superlattices. Studies indicate that these superlattices exhibit negative resistance above room temperature. We owe the anomalous conductivity phenomenon to the multibarrier resonant tunneling through the μc‐Si:H/a‐Si:H multiple‐quantum‐well structure. By considering the resonant tunneling effects, the anomalous conductivity behavior can be successfully explained.
Show PACS
73.40.Gk Tunneling
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Metastable SiGeC formation by solid phase epitaxy

J. W. Strane, H. J. Stein, S. R. Lee, B. L. Doyle, S. T. Picraux, and J. W. Mayer

Appl. Phys. Lett. 63, 2786 (1993); http://dx.doi.org/10.1063/1.110334 (3 pages) | Cited 79 times

Full Text: | Download PDF

Show Abstract
We report the synthesis and detailed structural characterization of SiGeC metastable alloys formed by solid phase epitaxial regrowth. Epitaxial layers with 0.7 and 1.4 at. % C are formed by 700 °C regrowth of multiple energy carbon implants into preamorphized Si0.86Ge0.14 layers on Si substrates. Transmission electron microscopy and Rutherford backscattering spectrometry show heteroepitaxial regrowth of Si1−x−yGexCy layers into the metastable diamond cubic phase. Fourier transform infrared spectroscopy verifies that the carbon occupies substitutional lattice sites. Double crystal x‐ray diffraction measurements of Si1−x−yGexCy and Si1−yCy reference layers quantify the C‐induced tensile strain component. This strain compensates for the compressive strain in the SiGe layers, and indicates a change in lattice constant per atomic fraction C in agreement with Vegard’s law.
Show PACS
81.15.Np Solid phase epitaxy; growth from solid phases

Realization of crescent‐shaped SiGe quantum wire structures on a V‐groove patterned Si substrate by gas‐source Si molecular beam epitaxy

N. Usami, T. Mine, S. Fukatsu, and Y. Shiraki

Appl. Phys. Lett. 63, 2789 (1993); http://dx.doi.org/10.1063/1.110335 (3 pages) | Cited 24 times

Full Text: | Download PDF

Show Abstract
SiGe/Si quantum wire structures were successfully fabricated on a V‐groove patterned Si substrate by using gas‐source Si molecular beam epitaxy (GS‐SiMBE). A cross sectional image of transmission electron microscope clarified a crescent‐shaped SiGe layer at the bottom of the V‐groove owing to anisotropy of the growth rate on the different crystal orientations in GS‐SiMBE.
Show PACS
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
Page 1 of 2 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close