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29 Nov 1993

Volume 63, Issue 22, pp. 2987-3093

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Time resolved 3.10 eV luminescence in germanium‐doped silica glass

Matt Gallagher and Ulf Österberg

Appl. Phys. Lett. 63, 2987 (1993); http://dx.doi.org/10.1063/1.110290 (3 pages) | Cited 29 times

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In this letter we present time resolved measurements of the 3.10 eV (400 nm) photoluminescence in germainum‐doped silica. The 3.10 eV band arises from a triplet to singlet transition in a GeO defect. We find that the photoluminescence decays with a time constant of around 100 μs. There is a delay roughly 10 μs in duration between excitation and the appearance of maximum photoluminescence intensity. This is evidence that an additional energy state contributes to the radiative decay of the triplet state. This state can exist within the same defect or it can exist in another defect and transfer energy to the GeO.  
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78.30.Hv Other nonmetallic inorganics
78.40.Ha Other nonmetallic inorganics
78.55.Hx Other solid inorganic materials
78.47.-p Spectroscopy of solid state dynamics
42.70.Ce Glasses, quartz

Grating‐coupled surface‐emitting lasers with integrated corner reflectors

Mats Hagberg, Torgil Kjellberg, Niklas Eriksson, and Anders G. Larsson

Appl. Phys. Lett. 63, 2990 (1993); http://dx.doi.org/10.1063/1.110293 (3 pages)

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Grating‐coupled surface‐emitting InGaAs/AlGaAs lasers with a single large area output coupler were fabricated by integrating a second order surface grating with corner reflectors. The grating as well as the corner reflectors were fabricated using electron beam lithography and chemically assisted ion beam etching, producing a uniform rectangular grating and high quality corner facets. A thin etch‐stop layer incorporated in the epitaxial structure made it possible to combine precise control of the grating position with a strained layer SQW‐GRINSCH structure. Well behaved lateral modes were observed in 70‐μm‐wide lasers, emitting narrow beams in both the lateral and the longitudinal direction. Threshold current densities as low as 99 A/cm2 were measured for 1200‐μm‐long lasers.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Observation of group delay dispersion as a function of the pulse width in a mode locked Ti:sapphire laser

Zhigang Zhang and Takashi Yagi

Appl. Phys. Lett. 63, 2993 (1993); http://dx.doi.org/10.1063/1.110262 (3 pages) | Cited 5 times

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The group delay dispersion which needs to be compensated in a mode locked Ti:sapphire laser was found to be a function of the resultant pulse width. This is attributed to the frequency chirp induced by self‐phase modulation.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Fc Modulation, tuning, and mode locking

Separate‐confinement heterostructure dependence of the effective carrier recombination coefficient of strained InGaAs/InGaAsP multiple quantum well lasers

Tetsufumi Odagawa, Kaoru Nakajima, Kazuhiro Tanaka, Hiroyuki Nobuhara, Tadao Inoue, Nirou Okazaki, and Kiyohide Wakao

Appl. Phys. Lett. 63, 2996 (1993); http://dx.doi.org/10.1063/1.110263 (3 pages) | Cited 5 times

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We experimentally investigated the separate‐confinement heterostructure (SCH) layer thickness and SCH band‐gap wavelength dependence of the effective carrier recombination coefficient of strained InGaAs/InGaAsP multiple quantum well lasers. The dependence is explained by the carrier transport between the SCH layers and the wells.  
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Optical injection induced polarization bistability in vertical‐cavity surface‐emitting lasers

Z. George Pan, Shijun Jiang, Mario Dagenais, Robert A. Morgan, Keisuke Kojima, Moses T. Asom, Ronald E. Leibenguth, Gregory D. Guth, and Marlin W. Focht

Appl. Phys. Lett. 63, 2999 (1993); http://dx.doi.org/10.1063/1.110264 (3 pages) | Cited 117 times

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We report the observation of bistable polarization switching in a vertical‐cavity surface‐emitting laser under optical injection. The wavelength dependence of the switching is measured. It is found that this polarization switching is achieved through injection locking where both the wavelength and the polarization of the vertical‐cavity laser are locked to the injected optical signal.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers

Laser‐induced fluorescence detection of polycyclic aromatic hydrocarbons in a dc arcjet used for diamond deposition

George A. Raiche and Jay B. Jeffries

Appl. Phys. Lett. 63, 3002 (1993); http://dx.doi.org/10.1063/1.110265 (3 pages) | Cited 1 time

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Using laser‐induced fluorescence techniques, we have made measurements in a dc arcjet plasma which grows chemical vapor deposition diamond. Here we present evidence for the gas‐phase formation of polycyclic aromatic hydrocarbons in the diamond growth environment. We discuss their presence in the context of hydrocarbon flame chemistry, and speculate on the role of aromatics in diamond film formation.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.80.Mg Arcs; sparks; lightning; atmospheric electricity

Homoepitaxial 13C diamond films studied by micro‐Raman and photoluminescence spectroscopy

D. Behr, J. Wagner, C. Wild, and P. Koidl

Appl. Phys. Lett. 63, 3005 (1993); http://dx.doi.org/10.1063/1.110266 (3 pages) | Cited 12 times

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Raman microscopy has been used to study 13C and 12C/13C isotopically mixed homoepitaxial diamond films grown by chemical vapor deposition on natural diamond substrates. The measured dependencies of the frequency and the width of the first‐order zone‐center optic phonon line on the isotope composition agree well with those reported for diamond crystals synthesized under high pressure. To study the evolution of the epitaxial layer quality for a 13C diamond film grown on a natural type IIa diamond substrate with an isotopic composition of almost pure 12C, micro‐Raman spectroscopy has been performed on a polished cross section. The width of the zone‐center phonon line is found to increase in the epitaxial layer from 2.6 up to 3.0 cm−1 with increasing distance from the film/substrate interface and is thus consistently larger than the linewidth of 2.5 cm−1 measured in the substrate. Two photoluminescence bands are observed in the epitaxial film centered at 2.16 and 2.21 eV. The 2.16 eV band, which has been attributed to emission from an interstitial nitrogen‐vacancy complex, shows a pronounced maximum in intensity at the film/substrate interface indicating an enhanced nitrogen incorporation at the interface.
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68.55.-a Thin film structure and morphology
78.30.Hv Other nonmetallic inorganics
78.55.Hx Other solid inorganic materials
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Pulsed‐laser ablation growth of epitaxial ZnSe1−xSx films and superlattices with continuously variable composition

J. W. McCamy and Douglas H. Lowndes

Appl. Phys. Lett. 63, 3008 (1993); http://dx.doi.org/10.1063/1.110267 (3 pages) | Cited 12 times

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We describe a new method to grow epitaxial semiconductor alloys with continuously variable composition, while using a single pulsed laser ablation target of fixed composition. Epitaxial ZnSe1−xSx films with continuously variable sulfur content, x, were grown by ablating a ZnSe target through low‐pressure ambient H2S gas. The sulfur content was easily controlled in the range 0<x<0.18 by varying the H2S partial pressure from 0 to 45 mTorr, for films grown at 325 °C. ZnSe1−xSx films differing in composition by as much as x=0.52 from the pure ZnSe target have been grown at 400 °C. We have used this method to grow heteroepitaxial structures with continuously graded or periodically repeating, abrupt compositional changes (compositional superlattices). This development removes the principal barrier to pulsed‐laser ablation (PLA) growth of compositionally graded semiconductor thin‐film materials, namely that the film and target normally have the same composition. The method appears to have broad application for PLA growth of other compound semiconductor films and heterostuctures, as well as to dope individual layers.
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68.55.-a Thin film structure and morphology
81.15.Fg Pulsed laser ablation deposition

Microstructural investigation of granular Ag‐Fe and Ag‐Co thin films by atomic resolution and nanochemical analysis electron microscopy

Z. G. Li, H. Wan, J. Liu, A. Tsoukatos, G. C. Hadjipanayis, and L. Liang

Appl. Phys. Lett. 63, 3011 (1993); http://dx.doi.org/10.1063/1.110242 (3 pages) | Cited 12 times

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The microstructure of as‐deposited granular Ag‐rich (75%–90%) Ag‐Fe and Ag‐Co thin films was investigated by atomic resolution and nanochemical analysis electron microscopy. Our results suggested that the thin films are two separate phases. The poorly crystallized transition metal particles, with size of less than 1.5 nm in the thin films, were directly observed and were found to be separated by nanosized Ag crystalline particles  
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68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
68.55.-a Thin film structure and morphology
75.70.-i Magnetic properties of thin films, surfaces, and interfaces

Electron cyclotron resonance chemical vapor deposition of silicon oxynitrides using tris(dimethylamino)silane

Marcel Boudreau, Mohamed Boumerzoug, Peter Mascher, and Paul E. Jessop

Appl. Phys. Lett. 63, 3014 (1993); http://dx.doi.org/10.1063/1.110243 (3 pages) | Cited 27 times

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A new compound, tris(dimethylamino)silane was used as an organosilicon source for the deposition of silicon oxynitride thin films. The depositions were carried out at low substrate temperatures (<150 °C) in an electron cyclotron resonance plasma enhanced chemical vapor deposition reactor. Films with compositions varying from Si3N4 to SiO2 were deposited on silicon substrates by varying the N2/O2 flow ratio to the plasma chamber. In situ ellipsometry measurements of the film optical index were well correlated with film composition. Auger electron spectroscopy showed that only low levels of carbon (<3 at. %) were present, while Fourier transform infrared spectroscopy showed low levels of bonded hydrogen. The deposition rate of high quality Si3N4 was as high as 220 Å/min.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
77.55.-g Dielectric thin films

Nonthermoluminescent dosimetry based on the afterglow response of europium‐doped alkali halides

R. Pérez Salas, R. Meléndrez, R. Aceves, and M. Barboza‐Flores

Appl. Phys. Lett. 63, 3017 (1993); http://dx.doi.org/10.1063/1.110244 (3 pages) | Cited 7 times

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A new nonthermoluminescent dosimetric technique was developed by using the afterglow response characteristic of alkali halide single crystals doped with europium ions. The afterglow luminescence decayed very slowly and its intensity was proportional to the radiation dose. The radiation dose was measured by the time intergration of the afterglow signal in a selected region. This afterglow dosimetry was compared with the conventional thermoluminescent method, by using single crystals of different alkali halides. The results show that the technique is suitable and versatile for ultraviolet and x‐ray radiation dose determination.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
61.80.Cb X-ray effects
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
78.55.Fv Solid alkali halides

Palladium carbide nanoparticles by gas flow reaction synthesis

Takao Yamamoto, Motoaki Adachi, Keisuke Kawabata, Keisaku Kimura, and Horst W. Hahn

Appl. Phys. Lett. 63, 3020 (1993); http://dx.doi.org/10.1063/1.110245 (3 pages) | Cited 4 times

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Nanoparticles of palladium carbide, a metastable phase with carbon atoms on interstitial sites of metallic lattice, were synthesized by a single process, which allows palladium metallic nanoparticles formed by vapor condensation in flowing argon carrier gas to immediately come in contact with acetone vapor. The average particle size observed by transmission electron microscopy is 5 nm and the geometric standard deviation of the distribution is 1.5.
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81.20.-n Methods of materials synthesis and materials processing
81.05.Rm Porous materials; granular materials
61.46.-w Structure of nanoscale materials

Role of stacking faults as misfit dislocation sources and nonradiative recombination centers in II‐VI heterostructures and devices

S. Guha, J. M. DePuydt, J. Qiu, G. E. Hofler, M. A. Haase, B. J. Wu, and H. Cheng

Appl. Phys. Lett. 63, 3023 (1993); http://dx.doi.org/10.1063/1.110246 (3 pages) | Cited 47 times

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We have investigated the role of stacking faults in high quality ZnSxSe1−x heterostructures and a ZnSxSe1−x/CdxZn1−xSe based II‐VI blue‐green quantum well laser structure grown on GaAs substrates. We find that these stacking faults, which originate at the epilayer/substrate interface during the initial stages of the growth, act as sources for misfit dislocation formation in the quantum well region of ZnSxSe1−x/CdxZn1−xSe based devices. We have analyzed the formation mechanism of these dislocations. We also show through cathodoluminescence microscopy that these stacking faults act as nonradiative recombination centers which therefore reduce the luminescence of these devices.
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42.55.Px Semiconductor lasers; laser diodes
78.60.Hk Cathodoluminescence, ionoluminescence
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
71.55.Gs II-VI semiconductors

Carrier capture processes in GaAs‐AlGaAs quantum wells due to emission of confined phonons

Gerald Weber and Ana Maria de Paula

Appl. Phys. Lett. 63, 3026 (1993); http://dx.doi.org/10.1063/1.110247 (3 pages) | Cited 12 times

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Carrier capture times are calculated for GaAs‐AlxGa1−xAs multiple quantum wells due to the emission of confined longitudinal optical phonons via electron‐phonon (Fröhlich) interaction. We compare our results with several capture times measured by optical techniques and we discuss the importance of a knowledge of the carrier excitation details in order to obtain an appropriate interpretation of the experimental results. We show that electrons excited into confined states with a large kinetic energy (which have been ignored in previous works) strongly influence the overall capture times.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Low temperature InAlAs buffer layers using trimethylarsenic and arsine by metalorganic chemical vapor deposition

N. Pan, J. Carter, J. Elliott, H. Hendriks, S. Brierley, and K. C. Hsieh

Appl. Phys. Lett. 63, 3029 (1993); http://dx.doi.org/10.1063/1.110248 (3 pages) | Cited 10 times

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Low temperature (LT) InAlAs buffer layers grown lattice matched to InP substrates using a combination of trimethylarsenic and arsine were demonstrated. The LT InAlAs buffer layer showed excellent surface morphology with a maximum resistivity of 2×105 Ω cm at a growth temperature of 475 °C. Low temperature photoluminescence and Hall‐effect measurements confirming the high quality of epitaxial layers grown on top of the LT InAlAs buffer layer. Electrochemical capacitance voltage measurements consistently confirmed the absence of conductive impurity spikes at the epitaxial/substrate interface.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.61.Ey III-V semiconductors
78.55.Cr III-V semiconductors

Effect of surface treatment on visible luminescence of porous silicon: Correlation with hydrogen and oxygen terminators

Rajesh Kumar, Yasuo Kitoh, and Kunihiko Hara

Appl. Phys. Lett. 63, 3032 (1993); http://dx.doi.org/10.1063/1.110249 (3 pages) | Cited 19 times

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The effect of hydrogen and oxygen surface termination atoms on the visible luminescence of porous Si was investigated for underlying physical mechanism. Atmospheric thermal treatment up to 1000 °C was carried out to study the functional relationship between the surface coverage and photoluminescence (PL). The results show that oxygen incorporation induces surface modification that enhance the PL efficiency after the removal of all SiHx (x=1–3) species. The presence of oxygen atoms can also account for the observed PL redshift along with the usual blueshift. The molecular orbital calculations on the cluster modeling showed the significance of oxygen atoms in modifying the electronic structure of porous Si.
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78.55.Hx Other solid inorganic materials
81.65.-b Surface treatments
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Surface passivation of GaAs using ArF excimer laser in a H2S gas ambient

N. Yoshida, S. Chichibu, T. Akane, M. Totsuka, H. Uji, S. Matsumoto, and H. Higuchi

Appl. Phys. Lett. 63, 3035 (1993); http://dx.doi.org/10.1063/1.110250 (3 pages) | Cited 3 times

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A dry surface passivation of GaAs using the combination of H2S gas with an ArF excimer laser was examined. Native oxides at the surface were etched away by laser irradiation in vacuum. By subsequent laser irradiation in a H2S gas ambient, the surface was covered with sulfur atoms. The dry passivation technique in this study is comparable to the wet passivation process using (NH4)2Sx treatment in terms of the sulfur coverage ratio.
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81.65.-b Surface treatments
73.20.At Surface states, band structure, electron density of states
82.50.Bc Processes caused by infrared radiation
82.50.Hp Processes caused by visible and UV light

Hydrogen‐iron interaction in proton‐implanted InP:Fe

D. W. Fischer, M. O. Manasreh, and G. Matous

Appl. Phys. Lett. 63, 3038 (1993); http://dx.doi.org/10.1063/1.110251 (2 pages) | Cited 2 times

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We have observed the local vibrational mode (LVM) infrared absorption spectra at 77 K from 2 MeV proton‐implanted InP crystals doped with different concentrations of Fe. It is found that the intensity of the LVM which is created at 2286 cm−1 is dependent on the Fe concentration. We conclude that this LVM is due to a P—H, FeIn complex.
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61.72.uj III-V and II-VI semiconductors
61.72.Yx Interaction between different crystal defects; gettering effect
63.20.Pw Localized modes
71.55.Eq III-V semiconductors

Monte Carlo analysis of noise spectra in Schottky‐barrier diodes

Tomás González, Daniel Pardo, Luca Varani, and Lino Reggiani

Appl. Phys. Lett. 63, 3040 (1993); http://dx.doi.org/10.1063/1.110252 (3 pages) | Cited 17 times

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We present a microscopic analysis of current fluctuations in a GaAs Schottky‐barrier diode under forward‐bias conditions. The calculations are performed by employing a one‐dimensional Poisson solver coupled self‐consistently with an ensemble Monte Carlo simulator. Results support and complement previous findings of M. Trippe, G. Bosman, and A. van der Ziel [IEEE Trans. Microwave Theory Tech. MTT‐34, 1183 (1986)] based on phenomenological models. In particular, the coupling between fluctuations in carrier velocity and self‐consistent field is found to be essential in determining the noise spectra as a function of applied voltages.
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85.30.Hi Surface barrier, boundary, and point contact devices
85.30.De Semiconductor-device characterization, design, and modeling
72.70.+m Noise processes and phenomena
72.20.Ht High-field and nonlinear effects

Iron detection in the part per quadrillion range in silicon using surface photovoltage and photodissociation of iron‐boron pairs

J. Lagowski, P. Edelman, A. M. Kontkiewicz, O. Milic, W. Henley, M. Dexter, L. Jastrzebski, and A. M. Hoff

Appl. Phys. Lett. 63, 3043 (1993); http://dx.doi.org/10.1063/1.110789 (3 pages) | Cited 43 times

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The photodissociation of iron‐boron pairs in p‐type silicon produces lifetime killing interstitial iron and may be combined with noncontact surface photovoltage (SPV) measurement of the minority carrier diffusion length to achieve fast detection of iron. We found that, for iron concentrations ranging from 8×108 to 1×1013 atoms/cm3, the pair dissociation using a white light (10 W/cm2) was completed within 15 s. Surface recombination was a major rate limiting factor. Passivation of the surface enhanced the rate by as much as a factor of 20. The photodissociation rate increased with increasing temperature, however, the increase was smaller than that of the thermal dissociation rate. These characteristics are consistent with a previously proposed recombination enhanced dissociation mechanism. For practical iron detection, it is important that the detection limit of the approach is close to one part per quadrillion.
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61.72.uf Ge and Si
61.72.S- Impurities in crystals
72.40.+w Photoconduction and photovoltaic effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Efficient keV x‐ray emission from plasmas generated with 4 ps KrF excimer laser pulses

I. C. E. Turcu, I. N. Ross, and G. J. Tallents

Appl. Phys. Lett. 63, 3046 (1993); http://dx.doi.org/10.1063/1.110253 (3 pages) | Cited 14 times

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A high x‐ray conversion efficiency is observed from plasmas produced with 4 ps pulses at 249 nm using commercial KrF lasers. Copper plasmas convert 11% of laser energy into hν∼1.2 keV photons, carbon plasmas 6.8% into ‘‘water window’’ photons (0.28 keV<hν<0.53 keV) and aluminum plasmas 0.4% into hν∼1.6 keV photons.
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79.20.Ds Laser-beam impact phenomena
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)

Atomic structure of Ge‐related point defects in Ge‐incorporated oxide films

M. E. Zvanut, W. E. Carlos, D. C. Paine, and C. Caragianis

Appl. Phys. Lett. 63, 3049 (1993); http://dx.doi.org/10.1063/1.110254 (3 pages) | Cited 1 time

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Germanium‐incorported oxides formed by high pressure wet oxidation of Si90Ge10 substrates are examined using electron paramagnetic resonance spectroscopy. Simulations based on the g tensor for the Ge E′ center suggest that the dominant defect observed in annealed 10 Mrad irradiated samples is an oxygen vacancy at a site of a substitutional Ge atom. Comparison of thin film and bulk samples suggests that the centers found in the films are associated with hydrogen. The results presented here should be directly applicable to optical components fabricated on semiconductor substrates for photon integrated circuits.
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61.72.J- Point defects and defect clusters
71.55.Ht Other nonmetals
81.65.-b Surface treatments

Properties of the quantum wires grown on V‐grooved Al0.3Ga0.7As/GaAs substrate by atmospheric pressure metalorganic chemical vapor deposition

Min‐Suk Lee, Yong Kim, Moo‐Song Kim, Seong‐II Kim, Suk‐Ki Min, Young Duk Kim, and Sahn Nahm

Appl. Phys. Lett. 63, 3052 (1993); http://dx.doi.org/10.1063/1.110255 (3 pages) | Cited 10 times

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We report the successful growth of quantum wire (QWR) structures of AlxGa1−xAs/ GaAs /AlxGa1−xAs on a V‐grooved Al0.3Ga0.7As/GaAs substrate. The samples are studied by photoluminescence spectra. The structures are grown by atmospheric pressure metalorganic chemical vapor deposition (MOCVD). The GaAs QWRs are fabricated on a V‐grooved Al0.3Ga0.7As/GaAs substrate instead of GaAs substrate. Due to the effect of the Al0.3Ga0.7As layer, a necking area is formed in the side quantum wells (QWLs) near the bottom of the V groove. This results in a reduction of the lateral widths of the QWRs. Also, the luminescence of the QWRs is greatly enhanced in spite of low packing density. It is the first structure made in attempts to produce the quantum‐size effects on a V‐grooved substrate with non‐(111) facets.  
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68.55.-a Thin film structure and morphology
78.55.Cr III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Simultaneous molecular beam epitaxy growth and scanning tunneling microscopy imaging during Ge/Si epitaxy

Bert Voigtländer and André Zinner

Appl. Phys. Lett. 63, 3055 (1993); http://dx.doi.org/10.1063/1.110256 (3 pages) | Cited 106 times

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A high temperature scanning tunneling microscope (STM) capable of simultaneous imaging and molecular beam epitaxy (MBE) growth at 600–900 K sample temperature is described. The formation of the two‐dimensional Stranski–Krastanov layer and the evolution of three‐dimensional islands during further growth of Ge on Si(111) was observed. An inversion of the aspect ratio of the islands with increasing coverage indicates a transition from coherent to dislocated 3D islands. This method (MBSTM) opens the possibility to follow MBE growth processes with STM in a real in situ way and gives access to the evolution of specific features during growth.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy

Effect of rapid thermal annealing on gate induced drain leakage in a n‐channel metal‐oxide‐semiconductor field effect transistor

J. C. Hsieh, Y. K. Fang, C. W. Chen, N. S. Tsai, M. S. Lin, and F. C. Tseng

Appl. Phys. Lett. 63, 3058 (1993); http://dx.doi.org/10.1063/1.110257 (2 pages)

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Significant gate induced drain leakage caused by post‐oxide rapid thermal annealing (RTA) was studied in this letter in comparison with the non‐RTA process for n‐channel metal‐oxide‐ semiconductor field effect transistor. It is found that the sub‐breakdown leakage increases with increasing RTA temperature. We proposed that interface states and recombination centers generated after RTA are the dominant factors in the enhancement of the leakage current. In addition, it is found that RTA has no effect on the avalanche breakdown voltage.
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85.30.Tv Field effect devices
85.40.Hp Lithography, masks and pattern transfer
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
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