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6 Dec 1993

Volume 63, Issue 23, pp. 3107-3238

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Degradation of II‐VI based blue‐green light emitters

S. Guha, J. M. DePuydt, M. A. Haase, J. Qiu, and H. Cheng

Appl. Phys. Lett. 63, 3107 (1993); http://dx.doi.org/10.1063/1.110218 (3 pages) | Cited 128 times

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We have carried out the first detailed structural studies of degradation in II‐VI blue‐green light emitters. Electroluminescence and transmission electron microscopy studies carried out on light emitting diodes fabricated from quantum well laser structures and electroluminescence studies on stripe laser structures show that degradation occurs by the formation and propagation of crystal defects. The studies indicate that room temperature cw lasing in such structures is possibly prevented by the rapid formation of such defects at the high current densities required for lasing.
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42.55.Px Semiconductor lasers; laser diodes
85.60.Jb Light-emitting devices
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

94‐GHz phase modulation of light by organic MNA (2‐methyl‐4‐nitroaniline) crystal

C. K. L. Wah, K. Iizuka, and A. P. Freundorfer

Appl. Phys. Lett. 63, 3110 (1993); http://dx.doi.org/10.1063/1.110219 (3 pages) | Cited 2 times

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Success in 94‐GHz electro‐optic phase modulation using the nonlinear organic MNA (2‐methyl‐4‐nitroaniline) crystal is reported. We believe this to be the highest electro‐optic modulation frequency ever achieved in a controlled manner. Dielectric constant, loss tangent, and electro‐optic constant of the MNA crystal were also measured at 94 GHz, ϵr′=2.2, tan δ=0.09, and r11=30±10 pm/V.
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78.20.Jq Electro-optical effects
42.70.Jk Polymers and organics
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.65.Pc Optical bistability, multistability, and switching, including local field effects

Flat‐phasefront fanout‐type power amplifier employing resonant‐optical‐waveguide structures

D. Botez, M. Jansen, C. Zmudzinski, L. J. Mawst, P. Hayashida, C. Tu, and R. F. Nabiev

Appl. Phys. Lett. 63, 3113 (1993); http://dx.doi.org/10.1063/1.110220 (3 pages) | Cited 5 times

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A novel type of fanout master‐oscillator power amplifier (MOPA) device using resonant antiguided structures is proposed, modeled, and demonstrated. Light injected in the central antiguide of an antiguided structure fans out, with increasing device length, due to resonant transmission between adjacent antiguide cores. After 1‐mm device length the emitting aperture becomes ≊100 μm wide, and the beam has a flat phasefront. The device has a strong built‐in index step (Δn=0.02–0.05), which makes it insensitive to the problems encountered with conventional fanout‐type amplifiers: filamentation and drive‐dependent beam pattern. Experimental results include flat‐phasefront and a diffraction‐limited emission from a 130‐μm‐wide exit aperture when the entry aperture is a 3‐μm‐wide antiguide core.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.79.Gn Optical waveguides and couplers

Wide range wavelength conversion experiments using a side‐injection light‐controlled bistable laser diode

H. Tsuda, K. Nonaka, K. Hirabayashi, H. Uenohara, H. Iwamura, and T. Kurokawa

Appl. Phys. Lett. 63, 3116 (1993); http://dx.doi.org/10.1063/1.110221 (3 pages) | Cited 7 times

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Wavelength conversion has been demonstrated using a distributed feedback side‐injection light‐controlled bistable laser diode with an input wavelength range of 1496–1597 nm. Insensitivity to input light wavelength and a large separation ratio of output from input (more than 30 dB) are advantageous for a wavelength converter.
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42.55.Px Semiconductor lasers; laser diodes
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.65.Pc Optical bistability, multistability, and switching, including local field effects

High efficiency ZnS:Mn ac thin film electroluminescent device structure

C. B. Thomas and W. M. Cranton

Appl. Phys. Lett. 63, 3119 (1993); http://dx.doi.org/10.1063/1.110222 (3 pages) | Cited 16 times

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A method for improving the luminous efficiency of a ZnS:Mn ac thin film electroluminescent device by modifying the structure to include thin, 100 Å, barrier layers of a Y2O3 is presented, with experimental comparisons of devices showing a fourfold increase in efficiency. The results are discussed in terms of electron tunneling and field redistribution as the mechanisms responsible for the enhancement of efficiency.  
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78.60.Fi Electroluminescence
85.60.Jb Light-emitting devices
78.66.Hf II-VI semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Extended temperature and wavelength performance of vertical cavity top surface emitting lasers

J. M. Catchmark, R. A. Morgan, K. Kojima, R. E. Leibenguth, M. T. Asom, G. D. Guth, M. W. Focht, L. C. Luther, G. P. Przybylek, T. Mullally, and D. N. Christodoulides

Appl. Phys. Lett. 63, 3122 (1993); http://dx.doi.org/10.1063/1.110223 (3 pages) | Cited 11 times

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We report over 130 °C continuous wave operation of unbonded vertical cavity top‐surface emitting lasers emitting more than 1.0 mW at 110 °C. Furthermore, we control threshold currents to within only ±1.35 mA (±12%) over a 150 °C temperature range. We are also able to control the threshold current to within a factor of 2 over a 50 nm wavelength range using the same epidesign.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Continuous‐wave, fourfold upconversion laser

P. Xie and S. C. Rand

Appl. Phys. Lett. 63, 3125 (1993); http://dx.doi.org/10.1063/1.110224 (3 pages) | Cited 20 times

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We report a new Er3+:LiYF4 cryogenic upconversion laser pumped by a fourfold upconversion process. Excitation at 1.5 μm results in laser emission at 701.5 nm on a transition with an upper state at nearly four times the pump photon energy. Mechanisms and the concept of cooperative upconversion enhancement are examined.
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42.55.Rz Doped-insulator lasers and other solid state lasers
32.80.Xx Level crossing and optical pumping
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Blue‐green laser emission from ZnSe quantum well microresonators

M. Hovinen, J. Ding, A. V. Nurmikko, D. C. Grillo, J. Han, L. He, and R. L. Gunshor

Appl. Phys. Lett. 63, 3128 (1993); http://dx.doi.org/10.1063/1.110225 (3 pages) | Cited 26 times

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Microresonator structures have been fabricated from (Zn,Cd)Se/Zn(S,Se) quantum well material. The resonators, which are designed in the ‘‘whispering gallery’’ geometry, have been optically pumped at room temperature with threshold excitation levels of 100 kW/cm2.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Real‐time control of molecular beam epitaxy by optical‐based flux monitoring

S. A. Chalmers and K. P. Killeen

Appl. Phys. Lett. 63, 3131 (1993); http://dx.doi.org/10.1063/1.110788 (3 pages) | Cited 16 times

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We have developed a real‐time molecular beam epitaxy control system based on Al and Ga atomic beam resonant absorption of hollow cathode lamp emission. By continuously monitoring the absorption of Al and Ga beams during growth, this system accurately determines instantaneous growth rates and then integrates these over time to determine layer thickness. This information is used in real time for effusion cell shutter (and hence layer thickness) control. The accuracy and flexibility of this system is demonstrated here by growing AlAs/GaAs distributed Bragg reflectors with consistent layer thicknesses even though effusion cell temperatures were intentionally varied. In each instance the system automatically detected and compensated for the different growth rates, resulting in DBRs with center wavelengths controlled to within 0.3% of the target wavelength.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Generation of 425‐nm light by waveguide frequency doubling of a GaAlAs laser diode in an extended‐cavity configuration

W. P. Risk, W. J. Kozlovsky, S. D. Lau, G. L. Bona, H. Jaeckel, and D. J. Webb

Appl. Phys. Lett. 63, 3134 (1993); http://dx.doi.org/10.1063/1.110226 (3 pages) | Cited 5 times

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A blue output power of 1.2 mW at 425 nm was generated using a periodically poled KTP waveguide for frequency doubling of a grating tuned, extended‐cavity laser containing an antireflection‐coated GaAlAs SQW‐GRINSCH laser diode as the gain element. A normalized conversion efficiency of 127%/W cm2 was achieved in the extended‐cavity configuration.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.55.Px Semiconductor lasers; laser diodes

Paradoxical spatial distribution of the electron temperature in a low pressure rf discharge

V. A. Godyak and R. B. Piejak

Appl. Phys. Lett. 63, 3137 (1993); http://dx.doi.org/10.1063/1.110227 (3 pages) | Cited 50 times

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Spatially resolved probe measurements of the electron energy distribution function (EEDF) in a capacitive rf discharge in argon reveal that the electron temperature decreases with increasing plasma heating rf field. This paradoxical behavior in the electron temperature distribution in an inhomogeneous rf field is shown to be the combined effect of nonlocal electron kinetics and a non‐Maxwellian EEDF typical of a low pressure capacitive rf discharge in a Ramsauer gas.
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52.80.Pi High-frequency and RF discharges
52.25.-b Plasma properties
52.40.Hf Plasma-material interactions; boundary layer effects

Triple crystal x‐ray diffractometry of periodic arrays of semiconductor quantum wires

V. Holý, L. Tapfer, E. Koppensteiner, G. Bauer, H. Lage, O. Brandt, and K. Ploog

Appl. Phys. Lett. 63, 3140 (1993); http://dx.doi.org/10.1063/1.110228 (3 pages) | Cited 20 times

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Kinematical diffraction theory and the optical coherence formalism have been used for calculating the diffuse x‐ray scattering from periodic quantum wires. The method calculates the distribution of the diffusely scattered intensity in the reciprocal lattice plane. The simulated distributions have been compared with those measured on a InAs/GaAs quantum wire by means of triple crystal x‐ray diffractometry and a good agreement has been achieved. The method can be applied to studies of internal stress relaxation in quantum wires.
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61.05.C- X-ray diffraction and scattering
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.35.B- Structure of clean surfaces (and surface reconstruction)

Phonon‐electron scattering in single crystal silicon carbide

Donald T. Morelli, Joseph P. Heremans, Charles P. Beetz, Woo Sik Yoo, and Hiroyuki Matsunami

Appl. Phys. Lett. 63, 3143 (1993); http://dx.doi.org/10.1063/1.110229 (3 pages) | Cited 9 times

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We have measured the thermal conductivity κ of single crystals of hexagonal silicon carbide (6H‐SiC) of two different electron densities n. The densities are low such that virtually all of the heat is conducted by lattice vibrations. At low temperatures the thermal conductivity of both samples varies as T2 and scales with the electron density. The calculated phonon mean free path thus varies as T−1 and is consistent with a model of scattering of the heat‐carrying phonons by electrons in an impurity band.
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66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves
63.20.K- Phonon interactions

Epitaxial LiTaO3 thin film by pulsed metalorganic chemical vapor deposition from a single precursor

Huyang Xie and Rishi Raj

Appl. Phys. Lett. 63, 3146 (1993); http://dx.doi.org/10.1063/1.110230 (3 pages) | Cited 22 times

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Epitaxial LiTaO3 thin films were grown on (0001) sapphire in a low pressure chemical vapor deposition reactor of a new design, using lithium tantalum hexa‐t‐butoxide as the precursor. X‐ray diffraction shows that the LiTaO3 c axis is normal to the sapphire surface. The x‐ray pole figure and cross‐section transmission electron microscopy diffraction show that the films were also in‐plane oriented, with sapphire [1010] parallel to lithium tantalate [1010]. The refractive index of the film compares well with bulk values, over a wide wavelength range.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Diamond deposition from halogenated methane reactants in a hot‐filament chemical vapor deposition reactor

Franklin Chau‐Nan Hong, Gou‐Tsau Liang, Jih‐Jen Wu, Dawson Chang, and Jing‐Chuang Hsieh

Appl. Phys. Lett. 63, 3149 (1993); http://dx.doi.org/10.1063/1.110231 (3 pages) | Cited 24 times

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The growth behavior of diamond films synthesized from halomethane reactants is studied in a hot‐filament chemical vapor deposition reactor. The growth characteristics of methane and several chloromethane reactants (CH2Cl2, CHCl3, and CCl4) are examined over a number of reactant concentrations, substrate temperatures (700–900 °C), reactor pressures, and filament temperatures. The results indicate that in comparison to methane, chloromethane reactants generally yield higher rates of diamond film growth, with this difference becoming more pronounced at lower substrate temperatures. As a result, chloromethane reactants possess potential in facilitating diamond growth at low growth temperatures. Possible explanations for this behavior involving gas phase and surface reaction mechanisms of chloromethane reactants are proposed.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Phonon dispersion and density of states of solid C60

Jin Yu, Rajiv K. Kalia, and Priya Vashishta

Appl. Phys. Lett. 63, 3152 (1993); http://dx.doi.org/10.1063/1.110232 (3 pages) | Cited 9 times

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Dispersion and density of states (DOS) of inter‐ and intramolecular phonons are calculated for solid C60 using a tight‐binding molecular dynamics method. Intermolecular phonon DOS extends up to 7.6 meV and shows libron peaks at 2.3 and 3.7 meV. Orientational disorder softens libron modes. Intramolecular phonons below 70 meV also show significant dispersion. The calculated phonon spectra are in good agreement with inelastic neutron scattering experiments.
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63.20.D- Phonon states and bands, normal modes, and phonon dispersion
61.05.F- Neutron diffraction and scattering

Fabrication of a one‐dimensional microhole array by anodic oxidation of aluminum

Hideki Masuda, Kazuyuki Nishio, and Nobuyoshi Baba

Appl. Phys. Lett. 63, 3155 (1993); http://dx.doi.org/10.1063/1.110233 (3 pages) | Cited 14 times

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A one‐dimensional microhole array with high‐aspect ratio was successfully obtained using anodic oxidation of an aluminum oxide/aluminum/glass structure. This process allows the fabrication of an array of microholes less than 1000 Å diameter without any exposure mask or resist, and the size of the array can be controlled on the basis of the relationship between the thickness of the aluminum layer and anodizing voltage.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
82.45.-h Electrochemistry and electrophoresis
81.05.Bx Metals, semimetals, and alloys

Structure of pentacene/tetracene superlattices deposited on glass substrate

H. Akimichi, T. Inoshita, S. Hotta, H. Noge, and H. Sakaki

Appl. Phys. Lett. 63, 3158 (1993); http://dx.doi.org/10.1063/1.110234 (3 pages) | Cited 27 times

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Pentacene/tetracene organic superlattices were formed by deposition on a glass substrate, and their structure was investigated by x‐ray diffraction and photoluminescence. For samples in which the number (n) of constituent pentacene (or tetracene) molecular layers within a period is such that n≥3, the first‐order x‐ray diffraction peak was found to consist of several equally spaced subpeaks. Comparison of the spectra with calculated structure factors established that a well‐defined superlattice structure was achieved in these samples. In contrast, samples with n<3 showed no evidence of superlattice formation. Photoluminescence spectra show clear correlation with the x‐ray results.
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68.55.-a Thin film structure and morphology
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.66.Qn Polymers; organic compounds

Formation of high resistivity regions in p‐type Al0.5In0.5P by ion implantation

J. C. Zolper, R. P. Schneider, and J. A. Lott

Appl. Phys. Lett. 63, 3161 (1993); http://dx.doi.org/10.1063/1.110235 (3 pages) | Cited 2 times

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Ion implantation has been applied to magnesium‐doped Al0.5In0.5P to produce high resistivity regions for the first time. Hydrogen, oxygen, and argon ions were implanted at a base dose ranging from 5×1012 to 5×1014 cm−2 and annealed from 400 to 900 °C. Hydrogen did not appreciably compensate the In0.5Al0.5P layer while oxygen and argon produced sheet resistances up to 1×109 Ω/☒. After annealing at 800 °C, regions with high dose oxygen implants maintained a sheet resistance above 1×107 Ω/☒, while regions with high dose argon implants recovered most of the unimplanted conductivity.
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61.80.Jh Ion radiation effects
71.55.Eq III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Electric field dependence of exciton spin relaxation in GaAs/AlGaAs quantum wells

A. Vinattieri, Jagdeep Shah, T. C. Damen, K. W. Goossen, L. N. Pfeiffer, M. Z. Maialle, and L. J. Sham

Appl. Phys. Lett. 63, 3164 (1993); http://dx.doi.org/10.1063/1.110211 (3 pages) | Cited 31 times

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We report measurements of the dependence of exciton spin relaxation in quantum‐well structures on an external electric field along the growth direction and on the well thickness. The results show that exciton spin relaxation is dominated by electron‐hole exchange interaction, and provide a quantitative understanding of various spin‐relaxation rates and their dependence on electric field and well thickness.
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78.55.Cr III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics
78.66.Fd III-V semiconductors

Investigation of silicon interstitial reactions with insulating films using the silicon wafer bonding technique

D. Tsoukalas, C. Tsamis, and J. Stoemenos

Appl. Phys. Lett. 63, 3167 (1993); http://dx.doi.org/10.1063/1.110212 (3 pages) | Cited 26 times

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The silicon wafer bonding technique of silicon implanted with oxygen (SIMOX) wafers is used to investigate the silicon interstitial reactions with a thin thermal oxide layer formed on the surface of one of the wafers before bonding. The silicon interstitials are generated by oxidation of the surface of selectively thinned bonded samples that form a silicon on insulator structure on the top of a SIMOX wafer. By monitoring the length of pregrown oxidation stacking faults we can calculate the diffusivity of the silicon interstitials transport vehicle in the thin oxide film for a temperature range widely used in silicon technology.
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61.72.Cc Kinetics of defect formation and annealing
61.72.J- Point defects and defect clusters
66.30.Lw Diffusion of other defects
81.65.-b Surface treatments

SiO2 mask erosion and sidewall composition during CH4/H2 reactive ion etching of InGaAsP/InP

B.‐T. Lee, T. R. Hayes, P. M. Thomas, R. Pawelek, and P. F. Sciortino

Appl. Phys. Lett. 63, 3170 (1993); http://dx.doi.org/10.1063/1.110213 (3 pages) | Cited 6 times

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SiO2 mask erosion has been studied during CH4/H2 reactive ion etching of InGaAsP/InP double heterostructures. The amount of mesa mask narrowing at a pressure of 100 mT, normalized for an etch depth of 3.5 μm, is approximately 0.4–0.6 μm and decreases slightly with increasing self‐bias voltage. It is not strongly dependent on the sidewall angle of the mask or CH4 concentration. Mask residue deposits on the etched sidewall under conditions of relatively high CH4 concentration and low power density. Auger electron spectroscopic analysis of the sidewall shows that the deposit contains a significant amount of elemental Si, which suggests a mechanism for mask erosion in which SiO2 is reduced to Si in the hydrogen/hydrocarbon‐rich environment of the plasma.
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81.65.-b Surface treatments
85.40.Hp Lithography, masks and pattern transfer
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Spatially confined nickel disilicide formation at 400 °C on ion implantation preamorphized silicon

Yu. N. Erokhin, F. Hong, S. Pramanick, G. A. Rozgonyi, B. K. Patnaik, and C. W. White

Appl. Phys. Lett. 63, 3173 (1993); http://dx.doi.org/10.1063/1.110214 (3 pages) | Cited 8 times

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The localized formation of continuous silicide layers via solid state reaction of nickel atoms with ion implantation preamorphized silicon is described. Ni films 12 nm thick were evaporated on 65 nm deep amorphized surface layers. The silicidation reaction was induced by two stage thermal annealing at 360 and 400 °C, well below the solid phase epitaxial regrowth temperature for amorphous Si and the normal NiSi2 formation temperature. Rutherford backscattering with channeling, XTEM, and four‐point‐probe measurements were used to determine the structure, interfacial morphology, composition, and resistivity of the silicide films. After the lower temperature annealing stage a continuous layer of NiSi2 is formed with an underlying residual amorphous region located above the crystalline substrate. During a second annealing the residual amorphous areas recrystallize epitaxially with respect to the substrate via lateral silicide growth. The process leads to formation of a continuous 35 nm thick nickel disilicide layer completely confined within the original amorphous region. Silicide resistivity was 44 μΩ cm. The process may be viewed as a low‐temperature process enhancement to self‐aligned silicide (SALICIDE) technology since silicide growth proceeds only on preamorphized areas of the silicon substrate.
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68.55.-a Thin film structure and morphology
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Lattice vibration in alternating monolayers of ZnSe and ZnTe

Yasushi Takemura, Keiichi Kakuno, Akira Yamada, and Makoto Konagai

Appl. Phys. Lett. 63, 3176 (1993); http://dx.doi.org/10.1063/1.110215 (3 pages)

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Lattice vibration in alternating monolayers of ZnSe and ZnTe is studied. Optical vibrational modes observed from (ZnSe)n‐(ZnTe)n (n=2, 3, 4) short‐period superlattice are evaluated by a theoretical analysis using the linear‐chain model. A method of the calculation which can take into account lattice strain is proposed. It is found that the zeroth‐ and the first‐order folded phonons in the ZnSe layer are observed in Raman scattering. By investing the displacement of the atoms, it is also found that the ZnSe‐like LO mode is localized in the ZnSe layer, whereas no mode is localized in the ZnTe layer. This characterization is attributed to an overlap of the dispersion curves for ZnSe‐ and ZnTe‐LO modes in the strained layer.
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63.50.-x Vibrational states in disordered systems
63.20.Pw Localized modes
78.30.Fs III-V and II-VI semiconductors
78.66.Hf II-VI semiconductors

Limits of Si/CoSi2/Si heterotransistors at high frequencies: Measurement and estimation

Dirk Uffmann and Stefan Zaage

Appl. Phys. Lett. 63, 3179 (1993); http://dx.doi.org/10.1063/1.110216 (3 pages) | Cited 1 time

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We report on the characterization of Si/CoSi2/Si heterotransistors. Transistor action results from the current flow through pinholes in the CoSi2 base layer. By fabricating integrated transistor structures the high‐frequency performance of Si/CoSi2/Si heterotransistors was accessed for the first time. The cutoff‐frequency fα of a low‐α device is higher than 20 GHz. Using a deduced model of the transistor we conclude that this result should be true for high‐α devices as well. A maximum oscillation frequency of 45 GHz is calculated for an experimental device with improved contact resistance. The high‐frequency performance of the devices is enhanced by increasing the emitter current. Considering the limits for high current operation we propose an advantageous configuration of pinholes and how to achieve this configuration.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Mx High-frequency effects; plasma effects
72.20.Fr Low-field transport and mobility; piezoresistance
73.40.Sx Metal-semiconductor-metal structures
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