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20 Dec 1993

Volume 63, Issue 25, pp. 3399-3529

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Photorefractive and domain gratings in barium titanate

R. S. Cudney, J. Fousek, M. Zgonik, P. Günter, M. H. Garrett, and D. Rytz

Appl. Phys. Lett. 63, 3399 (1993); http://dx.doi.org/10.1063/1.110153 (3 pages) | Cited 29 times

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We present concrete evidence for the formation of ferroelectric domain gratings induced by photorefractive space‐charge electric fields in top‐seeded solution‐grown barium titanate crystals. These domain gratings are not destroyed by light and, by applying a field, can be reconverted into photorefractive gratings that diffract much more light than the photorefractive gratings that create them, as much as 67% of an incident beam.
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis

Bismuth induced enhancement of the second‐harmonic generation efficiency in bismuth‐substituted yttrium iron garnet films

G. Petrocelli, S. Martellucci, and M. Richetta

Appl. Phys. Lett. 63, 3402 (1993); http://dx.doi.org/10.1063/1.110154 (3 pages) | Cited 15 times

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The second‐harmonic response of pure and bismuth‐substituted yttrium iron garnet films has been measured. A strong enhancement of the second‐harmonic generation (SHG) efficiency, related to the incorporation of bismuth, has been observed.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.66.Nk Insulators
78.20.Ls Magneto-optical effects
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Second harmonic generation by counter propagating beams in 4‐dimethylamino‐4′‐nitrostilbene side‐chain polymer channel waveguides

Akira Otomo, Silvia Mittler‐Neher, Christian Bosshard, George I. Stegeman, Winnfried H. G. Horsthuis, and Gustaaf R. Möhlmann

Appl. Phys. Lett. 63, 3405 (1993); http://dx.doi.org/10.1063/1.110155 (3 pages) | Cited 11 times

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We demonstrate surface emitted second harmonic generation due to mixing of counter propagating waves in in‐plane poled, low loss, channel waveguides of 4‐dimethylamino‐ 4′‐nitrostilbene (DANS) side‐chain polymers. Single film DANS side‐chain polymer waveguides yield high conversion efficiency devices.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Nv Optical frequency converters
42.79.Hp Optical processors, correlators, and modulators

Hot carrier and hot phonon effects on high‐speed quantum well lasers

C. Y. Tsai, L. F. Eastman, and Y. H. Lo

Appl. Phys. Lett. 63, 3408 (1993); http://dx.doi.org/10.1063/1.110785 (3 pages) | Cited 17 times

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We present a theoretical model to analyze the hot carrier and hot phonon effect on the modulation response of semiconductor quantum well lasers. We find that the carrier heating strongly depends on the energy relaxation time of carriers and the lifetime of longitudinal‐optic (LO) phonons. Furthermore, the carrier heating will significantly decrease the differential gain and increase the nonlinear gain coefficient and thus reduce the modulation bandwidth. From the numerical result, we demonstrate the bottleneck effect of the hot LO phonons on the modulation response of quantum well lasers. This implies that reducing the lifetime of LO phonons, for example, by doping in the quantum well, will most effectively decrease the carrier temperature and thus improve the modulation bandwidth.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking

Band‐gap engineered digital alloy interfaces for lower resistance vertical‐cavity surface‐emitting lasers

M. G. Peters, B. J. Thibeault, D. B. Young, J. W. Scott, F. H. Peters, A. C. Gossard, and L. A. Coldren

Appl. Phys. Lett. 63, 3411 (1993); http://dx.doi.org/10.1063/1.110156 (3 pages) | Cited 31 times

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We report on a technique of grading the heterobarrier interfaces of a p‐type distributed Bragg reflector mirror to reduce the operating voltages of vertical‐cavity surface‐emitting lasers (VCSELs). We report VCSELs with lower operating voltages (2–3 V) and record continuous‐wave room‐temperature power‐conversion efficiencies (17.3%). We experimentally demonstrate that by using a parabolic grading and modulating the doping correctly, a flat valence band is generated that provides low voltage hole transport. The low resistance mirrors are achieved using low Be doping, digital‐alloy grading and 600 °C growth temperatures.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation
68.55.-a Thin film structure and morphology

Carrier‐induced reduction of the index of refraction of GaInP measured with distributed feedback lasers

C. Kaden, U. A. Griesinger, H. Schweizer, C. Geng, M. Moser, F. Scholz, S. Benner, R. Blank, and H. Haug

Appl. Phys. Lett. 63, 3414 (1993); http://dx.doi.org/10.1063/1.110157 (3 pages) | Cited 8 times

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We present new results on the effective refractive index of GaInP/AlGaInP distributed feedback (DFB) lasers with grating periods around 100 nm, operated at 77 K and at room temperature. Double heterostructure (DH) lasers as well as multiple quantum well lasers show DFB‐laser emission at 300 K over a range of 15 nm. For the DH lasers a clear difference of absolute value and dispersion of the effective refractive index was observed between 77 and 300 K, which is explained by high carrier density effects. For a carrier density of N=2.5×1018 cm−3 the refractive index of GaInP decreases by 0.05, which is compared with an ab initio calculation.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Strained GaInAsP single‐quantum‐well lasers grown with tertiarybutylarsine and tertiarybutylphosphine

A. L. Holmes, M. E. Heimbuch, and S. P. DenBaars

Appl. Phys. Lett. 63, 3417 (1993); http://dx.doi.org/10.1063/1.110158 (3 pages) | Cited 4 times

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We report on low threshold current densities in GaInAsP single‐quantum‐well (SQW) lasers grown with the metalorganic column‐V precursors, tertiarybutylarsine and tertiarybutylphosphine, instead of the conventional compressed gas sources, arsine and phosphine. Threshold current densities of 121 A/cm2 for a 1.6% compressive strained SQW laser and 249 A/cm2 for an unstrained SQW laser have been measured and are among the lowest values seen in this material system.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation
68.55.-a Thin film structure and morphology

Large third‐order optical nonlinearity of tin microcrystallite‐doped silica glass formed by ion implantation

Yasuhiko Takeda, Tatsumi Hioki, Tomoyoshi Motohiro, and Shoji Noda

Appl. Phys. Lett. 63, 3420 (1993); http://dx.doi.org/10.1063/1.110159 (3 pages) | Cited 17 times

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Sn+ ions were implanted into silica glass at an acceleration energy of 400 keV to a dose of 2×1017 ions/cm2. Metallic Sn microcrystallites of 4–20 nm in diameter were formed to attain the average volume fraction of 28%. The dielectric function, ϵ, and the absolute value of the third‐order optical nonlinear susceptibility, ‖χ(3)‖, showed dispersions around a wavelength of 500 nm, owing to surface plasmon resonance. The difference in the peak width of ‖χ(3)‖ and the imaginary part of ϵ can be explained by an effective medium theory. The maximum of ‖χ(3)‖ was 3×10−6 esu, which is as large as those reported for semiconductor‐doped glasses.
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.70.Ce Glasses, quartz
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
61.72.up Other materials

Radiation from an annular grating on a planar optical waveguide

Rebecca H. Jordan and Dennis G. Hall

Appl. Phys. Lett. 63, 3423 (1993); http://dx.doi.org/10.1063/1.110160 (3 pages) | Cited 9 times

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This letter discusses the radiation scattering properties of a concentric‐circle grating on the surface of an optical waveguide. A boundary perturbation method is used to obtain an analytical expression for the field radiated by a set of concentric rings located at the film–cover interface of the waveguide. The analytical expression for the radiation field consists of a scattering integral which is integrated to predict the field’s intensity at points in the far field.
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42.82.Et Waveguides, couplers, and arrays
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes

Hydrogenating silicon dioxide in an electron cyclotron plasma

M. Delfino, W. Tsai, G. Reynolds, and M. E. Day

Appl. Phys. Lett. 63, 3426 (1993); http://dx.doi.org/10.1063/1.110134 (3 pages)

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The hydrogenating effect of a low‐temperature, electron cyclotron resonance excited H2 plasma on the surface chemistry of thermal SiO2 films is analyzed in situ by x‐ray photoemission spectroscopy and static secondary ion mass spectrometry. Hydrogenation with this nominal 10 eV proton flux results in Si‐(O4), H‐Si‐(O3), (H2)‐Si‐(O2), (H2)‐Si‐O, and H‐Si‐(Si3) bonding states to the complete exclusion of Si—OH bond formation. A simple thermodynamic argument accounts for the exclusivity of Si—H bonds terminating the outermost (O3)‐Si‐O‐Si‐(O3) network of a thick SiOx<2 film, thereby transforming what is normally a hydrophilic surface into one that is hydrophobic.
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81.65.-b Surface treatments
73.20.-r Electron states at surfaces and interfaces
68.35.B- Structure of clean surfaces (and surface reconstruction)

Nitrogen‐bound excitons in gallium phosphide, a new acoustic‐phonon spectrometer

T. Bouma and J. I. Dijkhuis

Appl. Phys. Lett. 63, 3429 (1993); http://dx.doi.org/10.1063/1.110135 (3 pages) | Cited 1 time

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Excitons bound to isoelectronic nitrogen in dilute GaP:N are shown to be applicable as phonon spectrometers with extreme sensitivity and broad spectral range (100 GHz–1 THz). Exploratory heat‐pulse experiments indicate that the acoustic‐phonon dynamics in GaP around 200 GHz is dominated by frequency conversion of phonons at the crystal surfaces.  
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43.58.Kr Spectrum and frequency analyzers and filters; acoustical and electrical oscillographs; photoacoustic spectrometers; acoustical delay lines and resonators
63.20.-e Phonons in crystal lattices
78.55.Cr III-V semiconductors

Liquid crystal alignment on polyimide Langmuir–Blodgett films prepared on a newly designed Langmuir trough using a flowing subphase

Yang‐Ming Zhu, Zh‐Hong Lu, Feng Qian, Xiao‐Min Yang, and Yu Wei

Appl. Phys. Lett. 63, 3432 (1993); http://dx.doi.org/10.1063/1.110136 (2 pages) | Cited 11 times

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Nematic and smectic liquid crystals are homogeneously aligned on polyimide Langmuir–Blodgett films prepared by horizontal lifting on a novel Langmuir trough using a flowing subphase. Atomic force microscopy observation of the polymer monolayer deposited on graphite reveals that the polymer chains are elongated and aligned in the flow direction. Thus the alignment may act through the orientation of polyimide molecules.
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61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
68.18.-g Langmuir-Blodgett films on liquids
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Dependence of InAs phonon energy on misfit‐induced strain

M. J. Yang, R. J. Wagner, B. V. Shanabrook, W. J. Moore, J. R. Waterman, C. H. Yang, and M. Fatemi

Appl. Phys. Lett. 63, 3434 (1993); http://dx.doi.org/10.1063/1.110137 (3 pages) | Cited 10 times

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The transverse‐optical (TO) phonon energy in strained InAs quantum wells has been investigated by using far‐infrared absorption. We observe that the TO phonon energy decreases when the misfit‐induced biaxial tension in the InAs single quantum well is increased. Our result shows a stronger phonon energy dependence on the strain than the one reported by Cerdeira et al. [Phys. Rev. B 5, 580 (1972)]. The discrepancy may be explained by stress relaxation near the surface in their experiment. The application of our result will be discussed.
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78.30.Fs III-V and II-VI semiconductors
63.20.-e Phonons in crystal lattices
68.55.-a Thin film structure and morphology
78.66.Fd III-V semiconductors

In situ mechanical relaxation of Cu films growing on a Si substrate

C. M. Su and Manfred Wuttig

Appl. Phys. Lett. 63, 3437 (1993); http://dx.doi.org/10.1063/1.110138 (3 pages) | Cited 8 times

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A novel technique has been applied to study the mechanical relaxation during thin film growth. The stress as a function of time and thickness was investigated by measuring the resonance frequency of the vibrating membrane substrate. The stress relaxation and intrinsic damping of the film/substrate composite were monitored simultaneously in situ during film growth. A pronounced stress increase was found in films deposited on Si substrate with thicknesses ranging from 1 to 20 nm. The characteristic time of the stress generation and damping kinetics was found to be the sum of a thickness independent term and a term proportional to the film’s total thickness.
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68.55.-a Thin film structure and morphology
68.35.Gy Mechanical properties; surface strains
68.60.Bs Mechanical and acoustical properties

Nonuniform distribution of oxygen hole centers in silica optical fibers

S. Kannan, M. E. Fineman, J. Li, and G. H. Sigel

Appl. Phys. Lett. 63, 3440 (1993); http://dx.doi.org/10.1063/1.110139 (3 pages) | Cited 4 times

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This letter reports spatially variant distributions of nonbridging oxygen hole centers (NBOHCs) in pure synthetic silica core optical fibers with fluorine doped silica claddings. Results of low‐temperature x‐band electron spin resonance (ESR) etchback measurements have established the presence of NBOHCs in increased concentration at the core‐clad interfacial region. The observations on a low‐OH content silica core fiber are contrasted with that on a high‐OH fiber. The correlation between the ESR results and the spatially variant luminescent patterns observed in these fibers during excimer laser irradiation is also discussed.
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42.81.-i Fiber optics
42.70.Ce Glasses, quartz
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
71.55.Jv Disordered structures; amorphous and glassy solids

Epitaxial integration of single crystal C60

J. A. Dura, P. M. Pippenger, N. J. Halas, X. Z. Xiong, P. C. Chow, and S. C. Moss

Appl. Phys. Lett. 63, 3443 (1993); http://dx.doi.org/10.1063/1.110114 (3 pages) | Cited 20 times

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Single crystal thin films of (111) oriented C60 are grown on epitaxial layers of single crystal antimony. The C60/Sb epitaxy is confirmed by low‐energy electron diffraction which indicates that the [110] in‐plane directions are parallel in the two layers. X‐ray diffraction shows that the C60 film is entirely (111) oriented and of high quality with sharp Bragg peaks and narrow mosaic spread. In this study the Sb films were grown on GaSb, to which they are lattice matched; however, since Sb can be epitaxially grown on surfaces with a large lattice mismatch this technique may be applied to integrate C60 single crystals onto many substrates or devices with a surface having sixfold symmetry.
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68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
61.46.-w Structure of nanoscale materials

Hardness demonstration of diamond tips by nanometer‐scale controlled scratching on metallic surfaces

Xing Chu, Zili Ma, Ning Liu, Zhipeng Chang, Tianmiao Hu, Zengquan Xue, and Shijin Pang

Appl. Phys. Lett. 63, 3446 (1993); http://dx.doi.org/10.1063/1.110115 (3 pages) | Cited 1 time

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A new kind of diamond tip for the scanning tunneling microscope has been fabricated by a microwave plasma chemical vapor deposition method. The extreme hardness of the tips is demonstrated by doing nanometer‐scale controlled direct scratching on various metallic surfaces using these tips. The results indicate the potential of such diamond tips for nanometer‐scale mechanical polishing.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
62.20.-x Mechanical properties of solids
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices

Excimer laser ablation and activation of SiOx and SiOx‐ceramic couples for electroless copper plating

Mukund J. Godbole, Douglas H. Lowndes, and A. J. Pedraza

Appl. Phys. Lett. 63, 3449 (1993); http://dx.doi.org/10.1063/1.110116 (3 pages) | Cited 7 times

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A XeCl (4.0 eV photon energy) pulsed excimer laser was used to study the ablation behavior of substoichiometric silicon oxide (SSO), SiOx with x∼1.0. The SSO ablation rate was quite high and its ablation threshold quite low (≤0.3 J/cm2), thereby making it an interesting material for pulsed laser patterning without the use of deep‐UV radiation. Surface activation, as illustrated by subsequent copper deposition by the electroless process, was observed along well‐defined narrow (∼10–20 μm) lines just beyond the edges of ablated trenches in SSO deposited on XeCl‐transparent fused silica substrates. When a thin layer of SSO was deposited on polycrystalline Al2O3 or AlN substrates and subsequently laser treated, surface activation of these ceramics occurred on the laser‐irradiated regions at much lower fluences and with fewer exposures than are required to activate the bare ceramic substrates. In both types of experiment, activation is believed to result from redeposition of elemental silicon, an ablation product.
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68.55.-a Thin film structure and morphology
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
81.65.-b Surface treatments

Determination of surface lattice strain in ZnTe epilayers on {100}GaAs by ion channeling and reflectance spectroscopy

N. Lovergine, R. Cingolani, G. Leo, A. M. Mancini, L. Vasanelli, F. Romanato, A. V. Drigo, and M. Mazzer

Appl. Phys. Lett. 63, 3452 (1993); http://dx.doi.org/10.1063/1.110117 (3 pages) | Cited 9 times

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We report on the direct measurements of surface lattice strain in ZnTe epitaxial layers on {100}GaAs substrates by ion channeling Rutherford backscattering spectrometry and low‐temperature (10 K) reflectance spectroscopy measurements. The measured ZnTe strain is the superposition of the expected thermal (tensile) strain and a thickness‐dependent residual compressive strain. Our data indicate that the removal of this residual strain is slower than the rate predicted by the equilibrium theory, following an apparent h−1/2 power‐law dependence on the epilayer thickness h, above ∼100 nm.
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68.55.-a Thin film structure and morphology

Identity of the light‐emitting states in porous silicon wires

Chin‐Yu Yeh, S. B. Zhang, and Alex Zunger

Appl. Phys. Lett. 63, 3455 (1993); http://dx.doi.org/10.1063/1.110118 (3 pages) | Cited 19 times

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We present empirical pseudopotential calculations of the electronic structure of [001] silicon quantum wires, aiming at identification of the states that couple radiatively to the valence‐band maximum. We find that the near‐gap wave functions differ qualitatively from effective‐mass depictions. Instead, they can be described as off‐Γ bulk states. The effects of H chemisorption on the wire energies and wave functions are studied. We find that the Si skeleton dominates the emission. The resulting lifetimes versus energy relation agrees with the experimental measurements only if one assumes coexistence of quantum wires with quantum dots.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.55.Hx Other solid inorganic materials

Positron trap sites in the native oxide film grown on a hydrogen‐terminated silicon surface

M. Fujinami and N. B. Chilton

Appl. Phys. Lett. 63, 3458 (1993); http://dx.doi.org/10.1063/1.110119 (3 pages) | Cited 3 times

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Positron behavior in thin native oxide layers grown on an initially hydrogen‐terminated Si(100) surface was investigated and correlated with the chemical structure of the layers determined using Fourier‐transform infrared absorption attenuated total reflection spectroscopy, and x‐ray photoelectron spectroscopy. Hydrogen termination of the Si surface by 4 vol % HF treatment gave rise to a narrower Doppler‐broadened positron‐electron annihilation line than that of bulk Si. By a process of oxidation in pure water very thin (up to 7.8 Å) layers were grown on the H‐terminated Si. The Doppler broadening of annihilations from the Si surface was seen to increase monotonically with thickness away from the value seen for amorphous bulk SiO2. The positronium fraction was monitored throughout but was found to be independent of the oxidation duration. It was found that the chemical structure of the surface, in particular the oxidized Si‐OH bond, was correlated with the positron annihilation mode and to the level of observed Doppler broadening.
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78.70.Bj Positron annihilation
81.65.-b Surface treatments
73.20.Hb Impurity and defect levels; energy states of adsorbed species
68.35.Dv Composition, segregation; defects and impurities

Effects of n‐type modulation doping of quantum wells on the dynamics of photoluminescence

J. N. Sweetser, T. J. Dunn, L. Waxer, I. A. Walmsley, S. M. Shank, and G. W. Wicks

Appl. Phys. Lett. 63, 3461 (1993); http://dx.doi.org/10.1063/1.110120 (3 pages) | Cited 4 times

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The rise time of band‐edge photoluminescence (PL) in n‐type modulation‐doped quantum‐well structures has been studied. The PL turns on less than 1 ps after carriers are photoinjected into the conduction band, or six times more rapidly in the n‐doped structures than in comparable undoped structures. This is attributed to the rapid intraband relaxation of holes and the presence of a large ambient electron population due to the doping. We discuss the implications of this result for the direct modulation bandwidth of n‐type modulation‐doped quantum‐well lasers.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
42.55.Px Semiconductor lasers; laser diodes
78.47.-p Spectroscopy of solid state dynamics

Multiple peak photoluminescence of porous silicon

K. W. Cheah, Tommy Chan, W. L. Lee, Da Teng, W. H. Zheng, and Q. M. Wang

Appl. Phys. Lett. 63, 3464 (1993); http://dx.doi.org/10.1063/1.110121 (3 pages) | Cited 14 times

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The photoluminescence (PL) response of porous silicon is usually in the form of a single broad peak. Recently, however, PL response with two peaks has been reported. Here we report the observation of multiple peaks in the PL spectrum of porous silicon. A simple modeling of the line shape indicates that four peaks exist within the response curve, and analysis suggests that the PL of porous silicon is derived from quantum confinement in the silicon crystallites. The line shapes can be due to either minibands within the conduction and valence bands or crystallite size variation or a combination of the two.  
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78.55.Hx Other solid inorganic materials
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Resonant phenomena involving bound‐to‐continuum transitions in quantum wells

F. L. Serzhenko and N. F. Johnson

Appl. Phys. Lett. 63, 3467 (1993); http://dx.doi.org/10.1063/1.110122 (3 pages)

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We analyze resonant phenomena in finite quantum wells involving intersubband transitions from the ground state into the continuum spectrum. The momentum matrix element is shown to exhibit oscillatory behavior due to the presence of virtual levels. Estimates of the momentum matrix element based on the infinite quantum‐well approximation are found to be inaccurate.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.-w Optical properties of specific thin films

GaN/AlN digital alloy short‐period superlattices by switched atomic layer metalorganic chemical vapor deposition

M. Asif Khan, J. N. Kuznia, D. T. Olson, T. George, and W. T. Pike

Appl. Phys. Lett. 63, 3470 (1993); http://dx.doi.org/10.1063/1.110123 (3 pages) | Cited 33 times

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In this letter we report the fabrication of GaN/AlN short‐period superlattices using switched atomic layer epitaxy. Superlattice structures with GaN well thicknesses ranging from 2.6 to 20.8 Å (with AlN barrier thicknesses of 2.5, 7.5, and 15 Å) were deposited over basal plane sapphire and characterized for their structure, crystallinity, and optical properties. Cross‐sectional transmission electron micrographs indicate GaN/AlN interfaces and the superlattice surfaces are atomically smooth. The structures exhibit strong room temperature photoluminescence and a sharp absorption edge indicating a high optical quality.    
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68.55.-a Thin film structure and morphology
78.66.Fd III-V semiconductors
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