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20 Dec 1993

Volume 63, Issue 25, pp. 3399-3529

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Epitaxial growth of Si by ArF laser‐excited supersonic free jets of Si2H6

T. Motooka, H. Abe, P. Fons, and T. Tokuyama

Appl. Phys. Lett. 63, 3473 (1993); http://dx.doi.org/10.1063/1.110124 (3 pages) | Cited 6 times

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Epitaxial growth processes of Si from ArF laser‐excited Si2H6 supersonic free jets have been investigated using reflection high‐energy electron diffraction, growth rate, and atomic force microscopy measurements. Layer‐by‐layer epitaxial growth was observed at substrate temperature Ts=670 °C regardless of the laser excitation. However, it was found that island growth was predominant at Ts=550 °C without the laser excitation, while layer‐by‐layer growth occurred by using the ArF laser‐excited Si2H6 jet probably due to an enhancement of surface reactions induced by precursor species obtained from laser‐excited Si2H6 .
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68.55.-a Thin film structure and morphology
82.50.Bc Processes caused by infrared radiation
82.50.Hp Processes caused by visible and UV light

Solid phase epitaxy of relaxed, implantation‐amorphized Si1−xGex alloy layers grown on compositionally graded buffers

S. Y. Shiryaev, M. Fyhn, and A. Nylandsted Larsen

Appl. Phys. Lett. 63, 3476 (1993); http://dx.doi.org/10.1063/1.110125 (3 pages) | Cited 16 times

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Solid phase epitaxial regrowth of implantation‐amorphized, relaxed Si0.75Ge0.25 alloy layers grown by molecular beam epitaxy on compositionally graded buffer layers was investigated with ion channeling techniques. The amorphization was done by Ge implantation. The regrowth velocity follows an Arrhenius curve in the investigated temperature range, 471≤T≤506 °C, with an activation energy, Ea=2.76±0.15 eV, equal to published values for Si. The regrowth velocity, however, is enhanced by almost a factor of 5 in this temperature range as compared to Si.
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81.15.Np Solid phase epitaxy; growth from solid phases
61.80.Jh Ion radiation effects

In situ metalorganic vapor phase epitaxy control of GaAs/AlAs Bragg reflectors by laser reflectometry at 514 nm

Y. Raffle, R. Kuszelewicz, R. Azoulay, G. Le Roux, J. C. Michel, L. Dugrand, and E. Toussaere

Appl. Phys. Lett. 63, 3479 (1993); http://dx.doi.org/10.1063/1.110126 (3 pages) | Cited 11 times

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In situ reflectometry with a 514‐nm laser beam was used to monitor AlAs and GaAs layer thicknesses grown by metalorganic vapor phase epitaxy. The effective optical indices of these materials have been calibrated at the growth temperature by using an original method based on ex situ double crystal x‐ray diffraction measurement. According to these measured indices, the in situ laser reflectometry at 514 nm appears to be well suited for a real‐time thickness control of the GaAs/AlAs based Bragg reflectors. Finally, Bragg reflectors centered at 980 nm have been grown using the reflectometry at 514 nm. X‐ray diffraction and reflectivity measurements performed on these reflectors confirm a 1% reproducibility and accuracy of the wavelength stop band center.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
42.55.Px Semiconductor lasers; laser diodes
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Short terahertz pulses from semiconductor surfaces: The importance of bulk difference‐frequency mixing

Peter N. Saeta, Benjamin I. Greene, and Shun Lien Chuang

Appl. Phys. Lett. 63, 3482 (1993); http://dx.doi.org/10.1063/1.110127 (3 pages) | Cited 28 times

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The crystallographic orientation dependence of the far‐infrared (FIR) light generated at the (001) surface of a zincblende semiconductor is shown to derive principally from bulk difference‐frequency mixing. A strong modulation is observed for 1‐GW/cm2 pulses on InP, which demonstrates that the radiated FIR wave produced by bulk optical rectification is comparable to that generated by the transport of photoinjected carriers. Using the bulk rectification light as a clock, we show that more than 95% of the light produced from an InP (111) crystal by 100‐fs, 100‐μJ pulses is generated in a time shorter than the excitation pulse.  
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78.20.Bh Theory, models, and numerical simulation
78.66.Fd III-V semiconductors
79.20.Ds Laser-beam impact phenomena
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

AlGaInP visible vertical cavity surface emitting lasers operating with gain contributions from the n=2 quantum well transition

J. A. Lott, R. P. Schneider, J. C. Zolper, and K. J. Malloy

Appl. Phys. Lett. 63, 3485 (1993); http://dx.doi.org/10.1063/1.110128 (3 pages) | Cited 4 times

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We report the characteristics of visible vertical cavity surface emitting laser diodes. Wafers are grown such that the Fabry–Perot resonance wavelength changes with position from 690 to 620 nm, overlapping to varying degrees with the n=1 and n=2 quantum well gain peaks at ∼670 and 650 nm. Gain guided devices are tested across the entire wafer, and pulsed room temperature lasing is observed from 634.6 to 663.2 nm. Our results suggest that gain contributions from the second quantized state are required to overcome high cavity losses in order to achieve lasing.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Fabrication of GaAs nanostructures with a scanning tunneling microscope

E. S. Snow, P. M. Campbell, and B. V. Shanabrook

Appl. Phys. Lett. 63, 3488 (1993); http://dx.doi.org/10.1063/1.110129 (3 pages) | Cited 24 times

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A method for fabricating GaAs nanostructures with a scanning tunneling microscope (STM) is presented. Utilizing a previously developed Si STM fabrication technique, the STM is used to pattern a thin (5 nm) epitaxial Si layer which is grown on GaAs. The patterned Si layer is used as a mask for wet etching the GaAs. This fabrication technique is quite general and should extend to other material systems provided a surface epitaxial Si layer can be grown.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
81.65.-b Surface treatments
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy

Carrier transport in GaAs/AlGaAs heterostructures by microwave time‐of‐flight technique

S. Khorram, K. L. Wang, T. Block, and D. Streit

Appl. Phys. Lett. 63, 3491 (1993); http://dx.doi.org/10.1063/1.110130 (3 pages) | Cited 2 times

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An improved experimental method has been developed to study perpendicular carrier transport in heterostructures by a microwave time‐of‐flight technique. Transport properties of three samples, one with bulk GaAs, one with a AlGaAs barrier, and one with a AlGaAs/GaAs superlattice have been measured and analyzed in a comparative manner. A direct measurement of miniband conduction in superlattices is presented. The carrier velocity‐field characteristic of GaAs/AlGaAs superlattice is measured in the field range of 10–40 kV/cm at 77 K.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Ey III-V semiconductors
73.50.Fq High-field and nonlinear effects
73.50.Dn Low-field transport and mobility; piezoresistance

Optical control of microwaves with semiconductor n‐i‐p‐i structures

Alan Kost, Linda West, T. C. Hasenberg, Jeffrey O. White, Mehran Matloubian, and George C. Valley

Appl. Phys. Lett. 63, 3494 (1993); http://dx.doi.org/10.1063/1.110784 (3 pages) | Cited 5 times

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We control the microwave transmission of a GaAs n‐i‐p‐i structure by illuminating it with a cw argon ion laser. Tests in a broadband microwave modulator wave spectrometer show that an optical intensity of 800 mW/cm2 produces a 50% change in transmission for microwaves between 10 and 50 GHz.
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78.70.Gq Microwave and radio-frequency interactions
78.66.Fd III-V semiconductors

Proton irradiation effects on strained Si1−xGex/Si heterostructures

J. S. Park, T. L. Lin, E. W. Jones, S. D. Gunapala, G. A. Soli, and B. A. Wilson

Appl. Phys. Lett. 63, 3497 (1993); http://dx.doi.org/10.1063/1.110131 (3 pages) | Cited 1 time

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Proton irradiation effects on strained Si1−xGex/Si heterostructures have been studied. For the experiment, p+‐Si1−xGex/p−‐Si heterojunction diodes were fabricated by molecular beam epitaxy (MBE) growth of strained p+‐boron doped SiGe layers on p−‐Si(100) substrates. Due to the valence band discontinuity between SiGe and Si layers, and degenerate doping in the SiGe layer, the characteristics of these heterojunction diodes are similar to those of metal‐semiconductor Schottky barrier diodes. The SiGe/Si heterojunction diodes are irradiated by 1 Mrad of protons at 1 and 8.5 MeV energies. The current‐voltage (I‐V) characteristics are measured as a function of temperature before and after irradiation. I‐V characteristics show a decrease of the reverse bias leakage current after irradiation. The effective heterojunction barrier heights (Φb) and Richardson constants (A∗∗) are measured before and after irradiation using activation energy measurements. The measurements show an increase of Φb and A∗∗ after irradiation. The increase of the effective barrier height is attributed to reduction of free‐holes in the SiGe layers due to proton induced displacement defects. The increase of effective barrier height suggests that the strain in the SiGe layers is conserved after 1 Mrad of proton irradiation.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
61.80.Jh Ion radiation effects

Monolayer chemical beam etching: Reverse molecular beam epitaxy

W. T. Tsang, T. H. Chiu, and R. M. Kapre

Appl. Phys. Lett. 63, 3500 (1993); http://dx.doi.org/10.1063/1.110132 (3 pages) | Cited 18 times

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We have developed an etching process with real‐time counting of each monolayer removed, thus achieving etching with monolayer precision and control. This is an exact reversal of molecular beam epitaxy or more specifically in this case, chemical beam epitaxy (CBE). This new etching capability which we refer to as monolayer chemical beam etching (ML‐CBET) is achieved by employing in situ reflection high‐energy electron diffraction (RHEED) intensity oscillation monitoring during etching. Etching is accomplished in high vacuum by injecting AsCl3 directly into a CBE growth chamber impinging on a heated GaAs substrate surface. Having both epitaxial growth and etching integrated in the same process and both capable of ultimate control down to the atomic layer precision represents a very powerful combination. This permits instant switching from growth to etching and vice versa, clean regrown interfaces critical for device applications, direct modification of surface chemistries during etching or growth, and high temperature etching (500–570 °C for InP and 500–650 °C for GaAs) unachievable in conventional etching processes. The temperature and flux dependence of etching rates are also studied using RHEED oscillations. Results indicate that ML‐CBET is studied predominantly via a layer‐by‐layer mechanism under the present etching conditions.
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81.65.-b Surface treatments
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Novel fabrication technique towards quantum dots

Der‐Cherng Liu and Chien‐Ping Lee

Appl. Phys. Lett. 63, 3503 (1993); http://dx.doi.org/10.1063/1.110133 (3 pages) | Cited 8 times

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A novel technique for semiconductor quantum dots fabrication is demonstrated. Using the technique of thermal etching or thermal evaporation during molecular beam epitaxial growth with a built‐in evaporation mask, semiconductor quantum dots were obtained in a single growth run.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
78.66.Fd III-V semiconductors

Metalorganic vapor phase epitaxy of GaP1−xNx alloys on GaP

S. Miyoshi, H. Yaguchi, K. Onabe, R. Ito, and Y. Shiraki

Appl. Phys. Lett. 63, 3506 (1993); http://dx.doi.org/10.1063/1.110109 (3 pages) | Cited 40 times

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We demonstrate a successful growth of GaP1−xNx alloys on GaP by metalorganic vapor phase epitaxy (MOVPE). This alloy system is predicted to have an extremely large miscibility gap, ranging from x=0.0000003 to 0.9999997 at 700 °C. However, metastable alloys (x≤0.04) have been obtained at the growth temperature of 630–700 °C. We focused on the growth condition dependence of solid composition (x). The nitrogen incorporation increases with decreasing growth temperature. It also increases with increasing growth rate, possibly due to nonequilibrium circumstances in the MOVPE growth. Low‐temperature photoluminescence (PL) measurements show that the band gap of GaP1−xNx shifts to lower energy with increasing x.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.55.Cr III-V semiconductors

Band‐edge photoluminescence of SiGe/strained‐Si/SiGe type‐II quantum wells on Si(100)

Deepak K. Nayak, Noritaka Usami, Susumu Fukatsu, and Yasuhiro Shiraki

Appl. Phys. Lett. 63, 3509 (1993); http://dx.doi.org/10.1063/1.110110 (3 pages) | Cited 15 times

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A high‐quality completely relaxed SiGe buffer layer is grown on Si(100) by gas‐source molecular‐beam epitaxy. A pseudomorphic Si layer is grown on this relaxed SiGe buffer to form SiGe/strained‐Si/SiGe type‐II (staggered) quantum wells. Intense band‐edge photoluminescence is observed from these quantum wells for the first time. The quantum confinement effect in SiGe/strained‐Si/SiGe type‐II quantum wells is demonstrated from the systematic shift of photoluminescence energy peaks with the width of the quantum well. Transitions from the strained‐Si quantum well are identified as radiative recombination of excitons, which are confined into the quantum well.
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78.55.Hx Other solid inorganic materials
78.66.Li Other semiconductors
68.55.-a Thin film structure and morphology

Microwave surface resistance of spin‐cast YBa2Cu3O7−x thin films on LaAlO3 substrates

Peir‐Yung Chu, Relva C. Buchanan, Feng Gao, Jay W. Kruse, and Milton Feng

Appl. Phys. Lett. 63, 3512 (1993); http://dx.doi.org/10.1063/1.110111 (3 pages) | Cited 1 time

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Microwave properties of spin‐cast YBa2Cu3O7−x thin films on LaAlO3 substrates were investigated. The films, prepared with carboxylate solution precursors and by reactive liquid phase sintering mechanism, showed dense epitaxial structure and good electrical properties. The surface resistance, measured at a frequency of 10 GHz, was 0.47 mΩ at 5.4 K and 3.1 mΩ at 77 K. The results indicate that this technique can be used to fabricate superconducting thin films for microwave applications at low cost and with wide area coverage.
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74.78.-w Superconducting films and low-dimensional structures
74.72.-h Cuprate superconductors
74.25.N- Response to electromagnetic fields
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Limiting factors for critical current densities in Bi2Sr2Ca2Cu3O10‐Ag composite superconducting tapes at elevated temperatures

K. Shibutani, Q. Li, R. L. Sabatini, M. Suenaga, L. Motowidlo, and P. Haldar

Appl. Phys. Lett. 63, 3515 (1993); http://dx.doi.org/10.1063/1.110112 (3 pages) | Cited 20 times

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Detailed measurements of I‐V curves at 4.2, 65, and 77 K as a function of applied magnetic field for two Bi(2:2:2:3)/Ag tapes, having critical current densities Jc of ∼1 and ∼2×104 A/cm2 (at 77 K and 0 T), revealed that (1) the primary limiting factor for the transport critical current densities in these tapes is the presence of a large fraction of weak and/or nonsuperconducting grain boundaries; (2) the observed dissipative voltages are due, however, mostly to the motion of the magnetic vortices in the grains; and (3) the E‐J curves are well described by an expression, E∼exp[−(J0/J)μ], rather than the commonly used power law, i.e., E∼Jn, where μ, J0, and n are constants.
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74.72.-h Cuprate superconductors
74.25.Sv Critical currents
74.81.Bd Granular, melt-textured, amorphous, and composite superconductors
84.71.Mn Superconducting wires, fibers, and tapes

Eddy current damping of planar domain wall in bistable amorphous wires

R. P. del Real, C. Prados, D.‐X. Chen, A. Hernando, and M. Vázquez

Appl. Phys. Lett. 63, 3518 (1993); http://dx.doi.org/10.1063/1.110113 (3 pages) | Cited 2 times

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An exact formula for the field produced by the eddy currents induced by transverse movements of a longitudinal planar domain wall in a magnetic cylinder is obtained. The result has been extended to satisfy the situation of bistable iron‐rich amorphous wires and compared with the dMav/dt pulse of such wires during magnetization reversal. It is shown that the propagating wall is essentially planar and the damping is solely due to eddy currents.  
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75.60.Ch Domain walls and domain structure
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects

Low energy ion implantation and electrochemical separation of diamond films

Mike Marchywka, Pehr E. Pehrsson, Daniel J. Vestyck, and Daniel Moses

Appl. Phys. Lett. 63, 3521 (1993); http://dx.doi.org/10.1063/1.110089 (3 pages) | Cited 33 times

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We combine low energy and low dose ion implantation with an electrochemical etch to fabricate thin diamond layers suitable for seeding homoepitaxial or polycrystalline chemical vapor deposited (CVD) diamond growth. Implantation of a carbon ion dose of 1×1016 cm−2 at 175 keV creates subsurface damage in a bulk crystal which is selectively removed by the electrochemical etch. Implanted substrates were subjected to CVD diamond deposition prior to etching of the damage layer. We discuss the effect of implantation and subsequent annealing conditions on the morphology and Raman spectra of the CVD films. All results indicate that the seed layer nucleated high quality CVD diamond film growth.  
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.80.Jh Ion radiation effects
81.65.-b Surface treatments

Evidence of rapid equilibration near the hot filament in diamond deposition

M. Ihara, K. Miyamoto, T. Yasuda, and H. Komiyama

Appl. Phys. Lett. 63, 3524 (1993); http://dx.doi.org/10.1063/1.110090 (3 pages) | Cited 2 times

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Chemical composition of the gas phase during the diamond growth by a hot‐filament method was measured gaschromatographically for two different configurations with feed gas introduction, the conventional method from a nozzle equipped on a reactor wall and the jet feed from a hole bored in a substrate located just beneath the filament. CH4 and C2H2, diluted in H2, were used as a source gas. The results indicated that equilibration took place so rapidly near the filament that even the jet‐feed mixture was converted to a thermodynamically stable composition composed mainly of C2H2, H, and H2. Insensitivity of the diamond process to the source hydrocarbon and its sensitivity to the filament‐and‐substrate configuration can be well interpreted.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology

Surface modification and metallization of fluorocarbon polymers by excimer laser processing

Hiroyuki Niino and Akira Yabe

Appl. Phys. Lett. 63, 3527 (1993); http://dx.doi.org/10.1063/1.110091 (3 pages) | Cited 40 times

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The surface chemical modification of poly(tetrafluoroethylene) and poly(tetrafluoroethylene‐ co‐hexafluoropropylene) films was carried out in hydrazine gas photolyzed with ArF excimer laser irradiation. The contact angle of the modified surfaces with water changed from 130° to 30° due to the reaction with hydrazine. Nitrogen on the surface was detected with x‐ray photoelectron spectroscopy, suggesting that amino groups were introduced onto the surface. In addition, on the basis of hydrophilic behavior, we succeeded in selective‐area electroless plating of nickel metal on the chemically modified surface.
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81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.65.-b Surface treatments
82.50.Bc Processes caused by infrared radiation
82.50.Hp Processes caused by visible and UV light
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
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