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19 Jul 1993

Volume 63, Issue 3, pp. 275-424

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Time dependence and optical quenching of photoluminescence in porous silicon

R. Laiho, A. Pavlov, O. Hovi, and T. Tsuboi

Appl. Phys. Lett. 63, 275 (1993); http://dx.doi.org/10.1063/1.110076 (3 pages) | Cited 15 times

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We have investigated time dependence and light‐induced quenching of photoluminescence (PL) in porous Si samples. After excitation with a N2 laser pulse, a shift of the maximum of the emission band from 630 to 680 nm within a time interval of 3≤t≤100 μs was observed. A consistent description of the PL data is obtained by using a model based on three different electron‐hole recombination processes in the sample. Measurements of light‐induced quenching of PL show great similarities with fatigue of photocurrent in illuminated hydrogenated amorphous silicon.
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78.55.Hx Other solid inorganic materials
78.47.-p Spectroscopy of solid state dynamics

Semiconductor ring lasers with reflection output couplers

J. P. Hohimer, G. R. Hadley, and G. A. Vawter

Appl. Phys. Lett. 63, 278 (1993); http://dx.doi.org/10.1063/1.110077 (3 pages) | Cited 7 times

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We report circular‐cavity semiconductor ring lasers with 45° reflection output couplers that increase the lasing output power and slope efficiency twofold compared to lasers with Y‐junction output couplers. These devices emit more than 3.5 mW of cw single‐frequency output power at 100 mA ring current with slope efficiencies of 0.07 W/A. The increased output power and reduced spontaneous emission improve single‐frequency side‐mode rejection by up to 10 dB (to nearly 32 dB).
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Optical phase conjugation in InGaAs/GaAs multiple quantum wells at 1.06 μm wavelength

Yang Zhao, Cunkai Wu, Pankaj Shah, M. K. Kim, and L. Ralph Dawson

Appl. Phys. Lett. 63, 281 (1993); http://dx.doi.org/10.1063/1.110078 (3 pages) | Cited 1 time

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The observation of phase conjugation in InGaAs/GaAs multiple quantum wells at 1.06 μm wavelength is reported on. The effective nonlinearity of the sample used in our experiments was measured to be χ(3)=10−7 esu. The nonlinearity is induced by the saturation absorption due to band filling and exciton bleaching. The saturation intensity is 1.3 kW/cm2.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
78.66.Fd III-V semiconductors
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Mode‐beating spectroscopy in a few‐mode optical guide

Ralf Eckhardt and Reinhard Ulrich

Appl. Phys. Lett. 63, 284 (1993); http://dx.doi.org/10.1063/1.110079 (3 pages) | Cited 4 times

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A mode‐coupling modulator is scanned along an optical waveguide. At the output of the guide spatial beats are observed. From their spatial frequencies ‖βm−βn‖ a self‐consistent set of propagation constants βm of the guided modes is derived in a manner similar to that used in atomic spectroscopy. The method is illustrated by magneto‐optic modulation of the six lowest modes of an optical fiber. Assignment of the βm to modal fields yields the core ellipticity and internal stress of the fiber.
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42.81.Cn Fiber testing and measurement of fiber parameters
42.87.-d Optical testing techniques

High power gasdynamically cooled carbon monoxide laser

H. von Bülow and M. Schellhorn

Appl. Phys. Lett. 63, 287 (1993); http://dx.doi.org/10.1063/1.110080 (3 pages) | Cited 4 times

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A capacitively coupled transverse radio frequency discharge has been successfully applied to excite a gasdynamically cooled supersonic CO laser operating at 105 K in a semiclosed gas cycle. The laser head is characterized by a very compact design and a high discharge power density (160 W/cm3). At a discharge pressure of 390 mbar a maximum laser output of 6 kW is obtained with an efficiency of 12.4%.  
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.-v Laser optical systems: design and operation

Third order nonlinearity of 4‐dialkylamino‐4′nitro‐stilbene waveguides at 1319 nm

Dug Y. Kim, Michael Sundheimer, Akira Otomo, George Stegeman, Winfried H. G. Horsthuis, and Guus R. Möhlmann

Appl. Phys. Lett. 63, 290 (1993); http://dx.doi.org/10.1063/1.110081 (3 pages) | Cited 14 times

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The intensity dependent optical properties of 4‐dialkylamino‐4′nitro‐stilbene polymer channel waveguides were measured at 1319 nm with a pulse modulated Mach–Zehnder interferometer to be n2=0.8×10−13 cm2/W and β2<0.08 cm/GW. This material is promising for all‐optical switching at 1319 nm because it satisfies both the W and T figures of merit.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.70.Jk Polymers and organics

114 Gbit/s soliton train generation through Raman self‐scattering of a dual frequency beat signal in dispersion decreasing optical fiber

S. V. Chernikov, E. M. Dianov, D. J. Richardson, R. I. Laming, and D. N. Payne

Appl. Phys. Lett. 63, 293 (1993); http://dx.doi.org/10.1063/1.110082 (3 pages) | Cited 9 times

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We report the generation of 114 Gbit/s trains of 250 fs fundamental solitons. The pulses are generated due to the conversion of an intense optical beat signal (generated from two DFB laser diodes and an erbium doped fiber amplifier combination) into a soliton train due to nonlinear propagation in a 1.6 km fiber of steadily decreasing dispersion. The train repetition rate corresponds to the beat frequency of the input signal and was readily tunable between 80 and 120 GHz. The results of a computer simulation of the system are found to be in good qualitative agreement with the experimental observations.
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42.81.Dp Propagation, scattering, and losses; solitons
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

High contrast Fabry–Perot optical modulator using quantum confined Stark effect tuning in InGaAs‐GaAs multiple quantum well cavity

S. Cheung, F. Jain, R. Sacks, D. Cullen, G. Ball, and T. Grudkowski

Appl. Phys. Lett. 63, 296 (1993); http://dx.doi.org/10.1063/1.110083 (3 pages) | Cited 3 times

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Tunable Fabry–Perot modulators, consisting of strained InGaAs‐GaAs multiple quantum well (MQW) layers, have been shown to yield a contrast over 1200:1. Tuning is achieved by varying the index of refraction of the MQW layers forming the cavity using a quantum confined Stark effect. The mirrors are realized by AlAs‐GaAs quarter wave λ/4 dielectric stacks having 12 and 15.5 periods, respectively. The device has the potential of achieving even higher tunable contrast ratios when the number of periods of the λ/4 mirrors are increased. A contrast ratio of 6000:1 has been achieved for a nontunable structure. Measured data on optical transmission and contrast ratio are presented for various wavelengths as a function of applied bias. Results of simulation of transmitted output are also discussed.
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42.79.Hp Optical processors, correlators, and modulators
78.66.Fd III-V semiconductors

Stable and efficient green light generation by intracavity frequency doubling of Nd:YVO4 lasers

Y. Kitaoka, S. Ohmori, K. Yamamoto, M. Kato, and T. Sasaki

Appl. Phys. Lett. 63, 299 (1993); http://dx.doi.org/10.1063/1.110084 (3 pages) | Cited 19 times

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A green light source of 11 mW (maximum) has been obtained by frequency doubling in 3 at. % Nd:YVO4 lasers pumped by a single longitudinal mode laser diode (LD), for a 50 mW incident pumping power, with grating feedback optics. When the temperature of the LD was changed within the range of 23±10 °C, the oscillated wavelength of the LD remained unchanged, and the relative intensity noise of the green light was maintained to less than −140 dB/Hz (at 2.5 MHz).
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Generation of 20 mW of blue laser radiation from a diode‐pumped sum‐frequency laser

P. N. Kean, R. W. Standley, and G. J. Dixon

Appl. Phys. Lett. 63, 302 (1993); http://dx.doi.org/10.1063/1.110085 (3 pages) | Cited 7 times

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Resonant intracavity sum‐frequency mixing of a diode‐pumped Nd:YAG laser and a 100 mW single stripe laser diode, has been used to generate a measured output power of 20 mW of blue laser radiation at 459 nm. This represents a total conversion efficiency of approximately 68% of the single stripe laser diode power incident on the cavity. The laser was also demonstrated to operate over a tuning range of 12 nm via angle tuning of the nonlinear crystal.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.60.By Design of specific laser systems
42.55.Rz Doped-insulator lasers and other solid state lasers
42.55.Px Semiconductor lasers; laser diodes

Formation of a metastable superlattice by x‐ray interaction with standing surface acoustic waves

D. V. Roshchupkin and M. Brunel

Appl. Phys. Lett. 63, 305 (1993); http://dx.doi.org/10.1063/1.110086 (3 pages) | Cited 1 time

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X‐ray diffraction on the surface of the YZ cut of a LiNbO3 ferroelectric crystal modulated by standing surface acoustic waves (SAW) was investigated under the total external reflection conditions. It is shown that a metastable superlattice is formed in the near‐surface region in the process of the interaction between the incident x‐ray radiation and the ferroelectric crystal surface modulated by standing SAW. The metastable superlattice may be stored for a long time period and may be read out by x‐ray and laser radiation.
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43.35.Pt Surface waves in solids and liquids
42.40.Ht Hologram recording and readout methods
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Mass‐resolved ion energy measurements at the grounded electrode of an argon rf plasma

R. J. M. M. Snijkers, M. J. M. van Sambeek, G. M. W. Kroesen, and F. J. de Hoog

Appl. Phys. Lett. 63, 308 (1993); http://dx.doi.org/10.1063/1.110087 (3 pages) | Cited 21 times

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The mass‐resolved ion energy distribution (IED) at the grounded electrode has been determined in a 13.56‐MHz parallel‐plate plasma in argon. The IED is determined of Ar+, Ar2+, Ar2+, ArH+, H3O+, and H3+ for several plasma conditions. At pressures higher than 10 mTorr, collisions in the sheath become important. The IED of Ar+ is particularly defined by charge exchange collisions in the sheath while the IED of the other ions shows only features generated by elastic scattering. This is confirmed by Monte Carlo simulations. The measurements clearly show the necessity of simultaneous mass and energy separation, rather than the nonmass‐resolved IED reported in the literature.
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52.80.Pi High-frequency and RF discharges
52.70.Nc Particle measurements
52.20.Hv Atomic, molecular, ion, and heavy-particle collisions

Radius tailoring of an intense relativistic electron beam using a fast rise‐time focusing coil

D. J. Weidman, M. J. Rhee, R. F. Schneider, K. T. Nguyen, and R. A. Stark

Appl. Phys. Lett. 63, 311 (1993); http://dx.doi.org/10.1063/1.110766 (3 pages) | Cited 2 times

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A ‘‘radius‐tailored’’ electron beam, which is tapered with a larger head and a smaller tail, has been generated. This has been accomplished by injecting the electron beam into a fast rise‐time magnetic focusing coil, so that the beam head expands while the beam body and tail are confined by the axial magnetic field. Time‐resolved beam radius measurements indicate that a beam radius tailoring on the order of 3 to 1 has been achieved. This result is also in agreement with computer simulations.
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41.75.Ht Relativistic electron and positron beams
41.85.Ct Particle beam shaping, beam splitting
41.85.Lc Particle beam focusing and bending magnets, wiggler magnets, and quadrupoles
41.85.Ja Particle beam transport

Emission spectroscopy during direct‐current‐biased, microwave‐plasma chemical vapor deposition of diamond

Yuzo Shigesato, Rachel E. Boekenhauer, and Brian W. Sheldon

Appl. Phys. Lett. 63, 314 (1993); http://dx.doi.org/10.1063/1.110055 (3 pages) | Cited 48 times

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Optical emission spectroscopy was used to investigate dc biasing during diamond film synthesis in a microwave plasma. These measurements show that biasing produces significant changes near the substrate (i.e., close to the sheath region). Increasing the negative bias voltage (Vb) from 0 to −180 V in a CH4/H2/Ar (4/496/30 sccm) mixture increases the intensities of the hydrogen Balmer α and β lines. The relative concentrations of neutral atomic hydrogen were estimated by using an Ar(750.4 nm) emission line as an actinometer. At 38 Torr, increasing Vb from 0 to −150 V increased the concentration of atomic hydrogen by more than 20%. In addition, increasing Vb also increased the electron temperature near the substrate. These effects are likely to play an important role in the enhanced diamond nucleation that has been observed after negative‐biased pretreatment.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
52.25.-b Plasma properties

Pulsed laser deposition of cubic boron nitride films on silicon substrates

F. Qian, V. Nagabushnam, and R. K. Singh

Appl. Phys. Lett. 63, 317 (1993); http://dx.doi.org/10.1063/1.110056 (3 pages) | Cited 14 times

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Quasicrystalline cubic boron nitride (cBN) thin films have been deposited on clean single crystal silicon substrates by the pulsed laser deposition technique. Different chamber gases (N2 and NH3) at pressures between 10−3 and 800 mTorr were employed for the deposition processes. Typically, boron‐rich films were obtained, but the boron/nitrogen ratio was reduced when nitrogen or nitrogen/ammonia gases were incorporated during the deposition process. Under a wide range of deposition conditions, the films exhibited a quasicrystalline cubic phase near the film–substrate interface (∼150 Å thick). A completely amorphous phase was observed beyond this region, suggesting that the substrate plays an important role in the crystallization of cBN thin films.
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81.15.Fg Pulsed laser ablation deposition

Solid‐phase regrowth of amorphous GaAs grown by low‐temperature molecular‐beam epitaxy

M. E. Twigg, M. Fatemi, and B. Tadayon

Appl. Phys. Lett. 63, 320 (1993); http://dx.doi.org/10.1063/1.110057 (2 pages) | Cited 5 times

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We have shown that solid‐phase recrystallization of an amorphous GaAs film can form a single‐crystal film. We observed the phenomenon in GaAs, deposited by molecular‐beam epitaxy at a growth temperature (Tg) of 190 °C and annealed at 775 or 850 °C. Observations in the transmission electron microscope indicate that annealing brings about a lower degree of As precipitation in the as‐grown amorphous films (Tg<215 °C) than in the as‐grown single‐crystal films (340 °C≳Tg≳215 °C). The lower degree of As precipitation in the initially amorphous material appears to insure a high concentration of As donors rather than a high concentration of resistivity increasing As precipitates. Electrical measurements show that the low‐range (Tg<215 °C) annealed sample has an extremely high n‐type carrier concentration (1018 cm−3) and mobility (800 cm2 V−1 s−1).
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.72.Cc Kinetics of defect formation and annealing
73.61.Ey III-V semiconductors

Metalorganic molecular beam epitaxial growth of high‐quality Cd1−xZnxTe (0≤x≤0.27) films

D. Rajavel and J. J. Zinck

Appl. Phys. Lett. 63, 322 (1993); http://dx.doi.org/10.1063/1.110058 (3 pages) | Cited 8 times

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High‐quality (001) Cd1−xZnxTe (0≤x≤0.27) films were grown by metalorganic molecular beam epitaxy on (001) GaAs substrates using thermally precracked dimethylcadmium, diethylzinc, and diethyltelluride. Cd1−xZnxTe/GaAs (0≤x≤0.05) films of 6–9 μm thickness exhibited x‐ray rocking curve full widths at half‐maximum of 200–240 arcsec, and 290–350 arcsec was measured for Cd1−xZnxTe/GaAs (0.09≤x≤0.17). The crystalline quality for the range of x values (0≤x≤0.27) reported here surpasses that previously published in the literature. The 5 K photoluminescence spectra of the Cd1−xZnxTe layers were dominated by strong and sharp bound excitonic transitions. In addition, the free excitonic transition was observed in Cd1−xZnxTe layers with 0≤x≤0.06. Secondary ion mass spectrometry measurements showed that the films were free of O and C contamination.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
78.55.Et II-VI semiconductors

Deposition of TiN using tetrakis(dimethylamido)‐titanium in an electron‐cyclotron‐resonance plasma process

A. Weber, R. Nikulski, and C.‐P. Klages

Appl. Phys. Lett. 63, 325 (1993); http://dx.doi.org/10.1063/1.110059 (3 pages) | Cited 10 times

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High‐quality TiN layers were deposited in an electron‐cyclotron‐resonance (ECR) plasma process at substrate temperatures between 350 and 600 °C. Tetrakis(dimethylamido)‐titanium [Ti(NMe2)4] was used as precursor and introduced into the downstream region of an ECR nitrogen plasma. The electrical properties of the gold‐colored TiN layers (45–100 μΩ cm) depend on the deposition rate, the substrate temperature, the microwave (MW) power, and the plasma gas composition. TiN with a resistivity of 45 μΩ cm could be obtained at a substrate temperature of 600 °C and a MW power of 400 W. The measured resistivities are so far the best reported values obtained by using a metalorganic precursor for TiN deposition. The deposits were characterized by resistivity measurements and electron probe microanalysis for chemical analysis. The morphology and step coverage was checked by atomic force and scanning electron microscopy.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

High‐resolution electron microscopic study of the interface between diamond film and its substrate

N. Jiang, Z. Zhang, B. W. Sun, and D. Shi

Appl. Phys. Lett. 63, 328 (1993); http://dx.doi.org/10.1063/1.110060 (3 pages) | Cited 5 times

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A high‐resolution electron microscopic (HREM) study of the interface structure between diamond film and its silicon substrate has been carried out. The HREM images reveal that there is an amorphous layer between diamond film and its substrate for a sample grown by the hot filament chemical vapor deposition. β‐SiC crystallites are embedded in this amorphous layer. The HREM images of cross‐sectional specimens reveal that the diamond crystallites can nucleate directly on either the intermediate amorphous layer, the β‐SiC crystallites, or at some scratches of the Si substrate.
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68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Solid‐phase epitaxial growth of lithium tantalate thin films deposited by spray‐metalorganic chemical vapor deposition

Alex A. Wernberg, Gabriel Braunstein, Gustavo Paz‐Pujalt, Henry J. Gysling, and Thomas N. Blanton

Appl. Phys. Lett. 63, 331 (1993); http://dx.doi.org/10.1063/1.110061 (3 pages) | Cited 8 times

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We demonstrate the solid‐phase epitaxial crystallization of thin films of lithium tantalate deposited on lithium niobate and sapphire substrates. An organometallic compound, formed by reaction of lithium dipivaloylmethanate and tantalum(V) ethoxide, is used as a single‐source precursor for the deposition of amorphous thin films of lithium tantalate using a spray‐metalorganic chemical vapor deposition process. Annealing of the amorphous films results in their epitaxial alignment with respect to the underlying LiNbO3 or Al2O3 substrates. X‐ray diffraction, ion channeling, and scanning electron microscopy are used to evaluate and compare the crystalline quality of the films produced by this solid‐phase epitaxial process to films that are crystalline as deposited.
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81.15.Np Solid phase epitaxy; growth from solid phases
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Low temperature current transport of Sn‐GaAs contacts

J. R. Gao, J. P. Heida, B. J. van Wees, S. Bakker, T. M. Klapwijk, and B. W. Alphenaar

Appl. Phys. Lett. 63, 334 (1993); http://dx.doi.org/10.1063/1.110034 (3 pages) | Cited 13 times

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We measure low temperature current transport properties of superconducting Sn contacts to p+‐GaAs. For contacts alloyed at 450 °C, the current‐voltage characteristics show a strong dependence on alloying time. The critical temperature of Sn near the superconductor‐semiconductor interface decreases from 3.8 to 1.8 K as the alloying time increases from 0 to 120 s. On the other hand, a long‐time alloying increases the transparency of the interface. Using the Blonder, Tinkham, and Klapwijk model [Phys. Rev. B 25, 4515 (1982)], we find that the transmission coefficient of the interface increases from 0.2 to 0.7 by alloying. However, the normal state resistance calculated using the model is much smaller than the experimental value.
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74.50.+r Tunneling phenomena; Josephson effects
74.45.+c Proximity effects; Andreev reflection; SN and SNS junctions
73.30.+y Surface double layers, Schottky barriers, and work functions

Laser dye impregnation of oxidized porous silicon on silicon wafers

L. T. Canham

Appl. Phys. Lett. 63, 337 (1993); http://dx.doi.org/10.1063/1.110035 (3 pages) | Cited 38 times

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Electrochemically etched silicon wafers can be utilized as transparent host matrices for a variety of luminescent media. Highly efficient (≳1%) photoluminescence across the entire visible range is demonstrated here using organic‐dye‐activated porous glass layers on Si wafers. Coumarin, xanthene, and oxazine dyes are used to obtain blue, green, yellow, and red emission at room temperature. Photopumped tunable lasers that can be integrated with silicon circuitry should be attainable with this approach.  
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42.70.Hj Laser materials
42.55.Mv Dye lasers
78.66.Jg Amorphous semiconductors; glasses
78.55.Hx Other solid inorganic materials

Measuring the junction temperature of AlGaAs/GaAs heterojunction bipolar transistors using electroluminescence

Yoshino K. Fukai, Yutaka Matsuoka, and Tomofumi Furuta

Appl. Phys. Lett. 63, 340 (1993); http://dx.doi.org/10.1063/1.110036 (3 pages) | Cited 6 times

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Rises in the junction temperatures of heterojunction bipolar transistors (HBTs) due to self‐heating effects during transistor operation are measured using the electroluminescence of the band‐to‐band recombination. This method is useful for the direct junction temperature monitoring of small geometry devices. Junction temperatures measured in AlGaAs/GaAs HBTs with five 2×20 μm2 emitter fingers are raised 115 °C when the product of the collector current and the emitter‐collector voltage is 0.25 W. The thermal resistance is determined to be 260 °C/W at 300 K.
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85.30.Pq Bipolar transistors
78.60.Fi Electroluminescence
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Lithium‐ion mobility improvement in floating‐zone silicon by external gettering

J. T. Walton, N. Derhacobian, Y. K. Wong, and E. E. Haller

Appl. Phys. Lett. 63, 343 (1993); http://dx.doi.org/10.1063/1.110037 (3 pages) | Cited 5 times

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Phosphorous diffusion for approximately 1 h at 950 °C is shown to be an effective gettering procedure to remove lithium‐ion mobility reducing defects in floating‐zone p‐type silicon wafers. The removal of these defects, which can severely impede the movement of lithium ions in silicon wafers during lithium‐ion compensation process, is crucial in the fabrication of silicon lithium‐drifted radiation detectors.
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66.30.J- Diffusion of impurities
61.72.uf Ge and Si
61.72.Yx Interaction between different crystal defects; gettering effect
29.40.Wk Solid-state detectors

Hydrostatic pressure effects on the optical transitions in the free‐standing porous silicon film

Norio Ookubo, Yasuhiro Matsuda, and Noritaka Kuroda

Appl. Phys. Lett. 63, 346 (1993); http://dx.doi.org/10.1063/1.110038 (3 pages) | Cited 9 times

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Optical absorption and photoluminescence spectra in the range 1.2–2.2 eV have been measured in free‐standing films of porous Si under hydrostatic pressures up to 6.4 GPa at room temperature. The absorption rises nearly exponentially in the low energy region. Under pressure, the whole spectrum shifts toward lower energies with a pressure coefficient of about −90 meV/GPa. The photoluminescence spectrum also exhibits a redshift of about −40 meV/GPa. These results are interpreted by analogy with the pressure‐induced shrinkage of the optical energy gap seen in amorphous chalcogenide semiconductors.
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78.55.Hx Other solid inorganic materials
78.66.Li Other semiconductors
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