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26 Jul 1993

Volume 63, Issue 4, pp. 429-566

Page 2 of 2 Pages Previous Page | Jump to Page

Reflectance anisotropy as a surface science probe of the growth of InAs on (001) GaAs by molecular beam epitaxy

S. R. Armstrong, M. E. Pemble, A. G. Taylor, P. N. Fawcette, J. H. Neave, B. A. Joyce, and J. Zhang

Appl. Phys. Lett. 63, 503 (1993); http://dx.doi.org/10.1063/1.109986 (3 pages) | Cited 3 times

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Reflectance anisotropy (RA) measurements for the initial stages of the growth of InAs on GaAs (001) by molecular beam epitaxy (MBE) are presented. It is demonstrated that the RA technique is capable of providing information regarding changes of surface In concentration on the 0.1 monolayer level in real time, at high temperatures (∼600 °C), under real InAs MBE conditions. In addition, associated with the detection of subtle coverage variations, surface reconstruction changes detectable by electron diffraction are also readily detectable by the RA technique.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Diffusion of sulfur‐35 into silicon using an elemental vapor source

F. Rollert, N. A. Stolwijk, and H. Mehrer

Appl. Phys. Lett. 63, 506 (1993); http://dx.doi.org/10.1063/1.109987 (3 pages) | Cited 4 times

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Diffusion of S into Si was investigated by the closed ampoule technique using the radioactive tracer 35S. Erfc‐type penetration profiles determined by mechanical sectioning originated from exposure of the samples to evaporated elemental sulfur. Diffusion coefficients in the temperature range 1328–1671 K obey the Arrhenius law with an activation energy of 1.80 eV and a pre‐exponential factor of 4.7×10−6 m2 s−1. This high diffusivity can be reconciled with the preferred incorporation of S on lattice sites by invoking substitutional‐interstitial exchange. Within this concept the measured long‐range transport appears to be controlled by a minority of interstitial S atoms.
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66.30.J- Diffusion of impurities
61.72.uf Ge and Si

Very high two‐dimensional electron gas concentrations with enhanced mobilities in selectively double‐δ‐doped GaAs/InGaAs pseudomorphic single quantum well heterostructures

H. M. Shieh, W. C. Hsu, and C. L. Wu

Appl. Phys. Lett. 63, 509 (1993); http://dx.doi.org/10.1063/1.109988 (3 pages) | Cited 3 times

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In this letter a new type of GaAs/In0.25Ga0.75As/GaAs pseudomorphic single quantum well heterostructure by selectively double‐δ‐doping GaAs layers on both sides of the InGaAs channel grown by low‐pressure metalorganic chemical vapor deposition is demonstrated. An extremely high two‐dimensional electron gas concentration more than 1×1013 cm−2 with enhanced mobility of 2900 cm2/V s is achieved. This type of structure can easily break through the doping limitation in conventional heterostructures while keeping a high mobility.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Electroreflectance polarization study of valence‐band states in ordered Ga0.5In0.5P

Takashi Kanata, Masahiko Nishimoto, Hiroshi Nakayama, and Taneo Nishino

Appl. Phys. Lett. 63, 512 (1993); http://dx.doi.org/10.1063/1.109989 (3 pages) | Cited 23 times

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Anisotropic optical transitions in an ordered Ga0.5In0.5P alloy semiconductor have been studied by electroreflectance (ER) polarization spectroscopy. The atomic ordering of column‐III sublattices causes a splitting of the valence‐band maximum into two doubly degenerated levels at k=0. The ER spectra reveal signals originated from the Γ6c‐Γ4v, Γ5v and Γ6c‐Γ6v transitions caused by the ordering. The [110] and [110] ER signals due to the Γ6c‐Γ6v transition show strong anisotropic characters of their intensity and line shape. On the other hand, the signal due to the Γ6c‐Γ4v, Γ5v transition changes only in the intensity by the polarization direction. The ER intensities measured at various polarization angles follow the theoretically derived trends based on the selection rule for electronic‐dipole transitions in the ordered crystal.
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71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Measurement of modulation saturation intensity in strain‐balanced, undefected InGaAs/GaAsP modulators operating at 1.064 μm

K. W. Goossen, J. E. Cunningham, M. B. Santos, and W. Y. Jan

Appl. Phys. Lett. 63, 515 (1993); http://dx.doi.org/10.1063/1.109990 (3 pages) | Cited 3 times

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We measure high modulation saturation intensities in both strain‐relaxed InGaAs/GaAs multiple‐quantum‐well (MQW) modulators (107 kW/cm2) and strain‐balanced InGaAs/GaAsP MQW modulators (31 kW/cm2) operating at 1.064 μm, measured with a Nd:YAG laser. This compares with 16 kW/cm2 for GaAs/Al0.3Ga0.7As thin barrier MQW modulators and 65 kW/cm2 for GaAs/Al0.02Ga0.98As shallow MQW modulators operating near 850 nm (reflection modulators). The advantage of the strain‐balanced system is that it results in an undefected material with sharper excitonic features and better morphology compared to the strain‐relaxed system. This study shows that the InGaAs/GaAsP system may be used to obtain long wavelength operation with these advantages without incurring an unreasonable penalty for high power operation due to the higher barriers.
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42.79.Hp Optical processors, correlators, and modulators
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
78.66.Fd III-V semiconductors

Ultraviolet ozone induced oxidation of epitaxial Si1−xGex(111)

A. Agarwal, J. K. Patterson, J. E. Greene, and A. Rockett

Appl. Phys. Lett. 63, 518 (1993); http://dx.doi.org/10.1063/1.109991 (3 pages) | Cited 20 times

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Exposure of Si1−xGex(111) to ultraviolet light in air at room temperature is shown, using angle‐resolved x‐ray photoelectron spectroscopy and preferential etching, to lead to the formation of a two‐phase oxide consisting of SiO2 and GeO2. Segregation of Ge was not observed at either the alloy/oxide or oxide/vapor interface. The oxidation rate was found to increase with increasing Ge content in the alloy.
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81.65.-b Surface treatments
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
82.50.Bc Processes caused by infrared radiation
82.50.Hp Processes caused by visible and UV light

Small‐signal admittance and switching measurements of the resonant‐tunneling diode

J. P. Mattia, E. R. Brown, A. R. Calawa, and M. J. Manfra

Appl. Phys. Lett. 63, 521 (1993); http://dx.doi.org/10.1063/1.109992 (3 pages) | Cited 2 times

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Measurements of the small‐signal admittance and the large‐signal switching time of In0.53Ga0.47As/AlAs resonant‐tunneling diodes are presented. The small‐signal admittance in the positive differential‐resistance region is found to be only a weak function of frequency. In contrast, the admittance in the negative differential‐resistance region is a strong function of frequency, and the associated time constant is a strong function of bias voltage. It is found that the large‐signal switching time is approximately a factor of 10 greater than the small‐signal time constant.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Gk Tunneling
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Reliability of the electrical properties of the BF2+ ion implanted polycrystalline diamond film

S. L. Lee, S. J. Lin, and J. Hwang

Appl. Phys. Lett. 63, 524 (1993); http://dx.doi.org/10.1063/1.109993 (3 pages) | Cited 2 times

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The resistance of the BF2+ ion implanted polycrystalline diamond film drifted higher with time when the diamond film was exposed in air. The reliable resistance of the implanted diamond film could be obtained after the heat treatment at high temperature under vacuum. Temperature dependence of the reliable resistance of the BF2+ ion implanted diamond film indicated two activation energies within the temperature range from room temperature to 400 °C. The effect of gas exposure on the resistance of the implanted diamond film was discussed.  
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72.80.Cw Elemental semiconductors
73.61.Cw Elemental semiconductors
71.55.Cn Elemental semiconductors
61.72.Cc Kinetics of defect formation and annealing

Electroreflectance‐photoreflectance technique for studies of built‐in electric field in layered materials

M. Sydor, Ali Badakhshan, D. A. Dale, K. Alavi, and R. Pathak

Appl. Phys. Lett. 63, 527 (1993); http://dx.doi.org/10.1063/1.109994 (3 pages) | Cited 3 times

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We use a new modulation technique to investigate photoreflectance from layered electronic materials. The technique can be used to determine the direction of the electric field, and separate the effects of electric field modulation from extraneous modulations due to laser generated charge carriers.
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73.40.-c Electronic transport in interface structures
73.30.+y Surface double layers, Schottky barriers, and work functions
78.66.-w Optical properties of specific thin films

Al‐Ga interdiffusion through group III‐vacancy second nearest‐neighbor hopping

B. L. Olmsted and S. N. Houde‐Walter

Appl. Phys. Lett. 63, 530 (1993); http://dx.doi.org/10.1063/1.109995 (3 pages) | Cited 20 times

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We report on a systematic study of impurity‐free Al‐Ga interdiffusion in AlGaAs/GaAs superlattices in sealed ampoules. Three ambients were explored: along the Ga‐rich solidus, with no excess Ga or As in the evacuated ampoule, and with excess As less than that required to reach the As‐rich solidus limit. In each of the ambients the Arrhenius dependence of the Al‐Ga interdiffusion coefficient is represented by a single activation energy throughout the temperature range investigated (700–1050 °C). These results were obtained using four structures with superlattice periods ranging from 90 to 520 Å. Excellent agreement was obtained for the Al‐Ga interdiffusion coefficients measured using superlattices on Si‐doped and undoped GaAs substrates. With proper normalization to a constant As overpressure, pAs4 = 1 atm, the Ga‐ and As‐rich activation energies are 3.26±0.12 and 4.91±0.23 eV, respectively. These activation energies are in the range predicted for Al‐Ga interdiffusion mediated by group III‐vacancy second nearest‐neighbor hopping. The increase in energy when going from Ga‐ to As‐rich conditions is attributed to a shift in the Fermi‐level position toward the valence band with an increase in the ionized group III‐vacancy concentration.
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66.30.Ny Chemical interdiffusion; diffusion barriers
61.72.Cc Kinetics of defect formation and annealing
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Quantum‐confined Stark effect in interdiffused AlGaAs/GaAs quantum well

E. Herbert Li, K. S. Chan, Bernard L. Weiss, and Joseph Micallef

Appl. Phys. Lett. 63, 533 (1993); http://dx.doi.org/10.1063/1.109996 (3 pages) | Cited 21 times

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The quantum‐confined Stark effect is analyzed in an interdiffused Al0.3Ga0.7As/GaAs single quantum well (QW) with an as‐grown well width of 100 Å, where the confinement profile is modeled by an error function. Results indicate a twofold enhancement of the Stark shift for the interdiffused quantum well over that of the square quantum well for a 50 kV/cm applied field. The fundamental exciton absorption peak also shows a much larger reduction with increasing applied field in the more extensively interdiffused QW. These characteristics may be used to realize optical modulators with higher on/off ratios and lower drive voltages.
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78.66.Fd III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
66.30.Ny Chemical interdiffusion; diffusion barriers
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Experimental observation of a minority electron mobility enhancement in degenerately doped p‐type GaAs

E. S. Harmon, M. L. Lovejoy, M. R. Melloch, M. S. Lundstrom, T. J. de Lyon, and J. M. Woodall

Appl. Phys. Lett. 63, 536 (1993); http://dx.doi.org/10.1063/1.109997 (3 pages) | Cited 19 times

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The variation of minority electron mobility with doping density in p+‐GaAs has been measured with the zero‐field time‐of‐flight technique. The results from a series of nine GaAs films doped between 1×1018 and 8×1019 cm−3 show the mobility decreasing from 1950 cm2 V−1 s−1 at 1×1018 cm−3 to 1370 cm2 V−1 s−1 at 9×1018 cm−3. For the doping range 9×1018–8×1019 cm−3, the decreasing trend in mobility is reversed. The measured mobility of 3710 cm2 V−1 s−1 at 8×1019 cm−3 is about three times higher than the measured value at 9×1018 cm−3. These results confirm and extend recent transistor‐based measurements and are in accord with recent theoretical predictions that attribute the increase in minority electron mobility in p+‐GaAs to reductions in plasmon and carrier‐carrier scattering at high hole densities.
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73.50.Dn Low-field transport and mobility; piezoresistance
73.61.Ey III-V semiconductors
72.20.Fr Low-field transport and mobility; piezoresistance
72.80.Ey III-V and II-VI semiconductors

Pulsed laser deposition of epitaxial silicon/h‐Pr2O3/silicon heterostructures

E. J. Tarsa, J. S. Speck, and McD. Robinson

Appl. Phys. Lett. 63, 539 (1993); http://dx.doi.org/10.1063/1.109998 (3 pages) | Cited 27 times

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Epitaxial Si/praseodymium oxide/Si heterostructures were grown in situ on (111) oriented Si substrates using pulsed laser deposition. Growth of the oxide layer under oxygen deficient conditions resulted in hexagonal Pr2O3 (h‐Pr2O3) films which displayed a (001)Pr2O3∥(111)Si, [110]Pr2O3∥[110]Si orientation and x‐ray rocking curve full width at half‐maximum values of ∼0.8°. The top Si layer grew epitaxially on the oxide film with a twinned (111)Si∥(001)Pr2O3 orientation. The surface structure of both oxide and semiconductor layers was investigated in situ using reflection high energy electron diffraction, and the resulting films were characterized using x‐ray diffraction and transmission electron microscopy.
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68.55.-a Thin film structure and morphology
81.15.Fg Pulsed laser ablation deposition
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Simultaneous synthesis of well‐separated buried and surface silicides using a single ion implantation step

M. F. Wu, J. De Wachter, P. Hendrickx, A.‐M. Van Bavel, H. Pattyn, G. Langouche, J. Vanhellemont, H. Bender, M. Maenhoudt, and Y. Bruynseraede

Appl. Phys. Lett. 63, 542 (1993); http://dx.doi.org/10.1063/1.109999 (3 pages) | Cited 5 times

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An unusual Ni distribution with two completely separated buried and surface silicide layers has been observed after Ni ion implantation in Si(111) kept at a temperature of 300 °C, with a dose of 1.1×1017/cm2 and at a fixed energy of 90 keV. RBS/channeling, AES, and cross‐sectional TEM have been used to study this phenomenon as a function of the substrate temperature and Co co‐implantation. A model is presented, based on the diffusion of the transition metal, the defect annealing during the implantation, and the gettering power of the surface and the end of range defects.
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61.72.uf Ge and Si
61.80.Jh Ion radiation effects

Similarities between the Landau spectra and dispersion relations in Si/Si1−xGex quantum wells investigated by magnetotunneling spectroscopy

Ulf Gennser, V. P. Kesan, D. A. Syphers, T. P. Smith, S. S. Iyer, and E. S. Yang

Appl. Phys. Lett. 63, 545 (1993); http://dx.doi.org/10.1063/1.110822 (3 pages) | Cited 5 times

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The current‐voltage characteristics of Si/Si1−xGex hole resonant tunneling structures in the presence of strong magnetic fields both parallel and perpendicular to the interfaces revealed new resonances for the latter configuration due to Landau level tunneling. However, there are remarkable similarities between the spectra for the two different magnetic field directions. This can be understood in a semiclassical context, and indicates that the broadening of the Landau levels in Si/Si1−xGex hole resonant tunneling diodes is severe.
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73.40.Gk Tunneling
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Environmental reactivity characteristics of copper‐oxide superconductors

Ji‐Ping Zhou, David R. Riley, A. Manthiram, Mark Arendt, Michael Schmerling, and John T. McDevitt

Appl. Phys. Lett. 63, 548 (1993); http://dx.doi.org/10.1063/1.110000 (3 pages) | Cited 15 times

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Although it is known that some of the high‐Tc phases react rapidly with water, CO2, CO, and acids, no systematic comparison of the relative reactivities of the various cuprate superconductors is available. In this letter, x‐ray powder diffraction, scanning electron microscopy, x‐ray photoemission spectroscopy, and electrochemical measurements are utilized to establish a comprehensive comparison of the intrinsic reactivity characteristics of the common copper‐oxide superconductors. Consequently, the following reactivity scale has been determined: YBa2Cu3O7≳Tl2Ba2Ca2Cu3O10≳Bi2Sr2CaCu2O8 ≥La1.85Sr0.15CuO4 ≳Nd1.85Ce0.15CuO4≳Nd1.85Th0.15CuO4.
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81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments
74.72.-h Cuprate superconductors

Electrical picosecond measurements of the photoresponse in YBa2Cu3O7−x

A. Ghis, J. C. Villegier, S. Pfister, M. Nail, and Ph. Gibert

Appl. Phys. Lett. 63, 551 (1993); http://dx.doi.org/10.1063/1.110001 (2 pages) | Cited 12 times

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Ultrafast transient voltage pulses (rise time 12 ps, width 29 ps) have been observed at 50 K across a current‐biased very thin YBa2Cu3O7−x epitaxial film (thickness 30 nm) when illuminated by short laser pulses. The accuracy of the present measures shows the system reaction during the first tens of picoseconds. Such very narrow photosignals can be described as related to nonequilibrium phenomena. The measured decay times corroborate the biexponential escape of the deposited energy described by other authors.
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74.25.N- Response to electromagnetic fields
74.40.-n Fluctuation phenomena
74.78.-w Superconducting films and low-dimensional structures
74.72.-h Cuprate superconductors

Surface outgrowths on sputtered YBa2Cu3O7−x films: A combined atomic force microscopy and transmission electron microscopy study

A. Catana, J. G. Bednorz, Ch. Gerber, J. Mannhart, and D. G. Schlom

Appl. Phys. Lett. 63, 553 (1993); http://dx.doi.org/10.1063/1.110002 (3 pages) | Cited 27 times

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We have structurally and morphologically characterized the surface of sputtered YBa2Cu3O7−x films on (001) SrTiO3 using atomic force microscopy and transmission electron microscopy. Atomic force microscopy reveals three types of outgrowths with different shapes and heights between 2 and 200 nm: type I exhibits cubic habit, type II tabular habit, and type III is an agglomerate of no particular shape. Some of the type‐III outgrowths are located at the center of growth spirals where the screw dislocation intersects the film surface, suggesting that in YBa2Cu3O7−x films these defects promote the occurrence of one another. Using high‐resolution electron microscopy and electron diffraction the surface outgrowths have been identified as follows: type I is Y2O3, type II Y2O3 and CuYO2, and type III YBa2Cu3O7−x, CuO, and Y2O3. In contrast to types‐I and ‐II outgrowths which are both epitaxially related to the surrounding YBa2Cu3O7−x, the large type‐III agglomerates consist of epitaxial and nonepitaxial grains. As it is found that the outgrowing nonepitaxial phases emanate from screw dislocations and from a,b‐axis domain boundaries, it is suggested that both internal stresses and high interfacial energies promote such outgrowths on YBa2Cu3O7−x films.
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68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)
74.78.-w Superconducting films and low-dimensional structures
74.72.-h Cuprate superconductors

Brick‐wall structure in polycrystalline TlBa2Ca2Cu3Ox thick films with high critical currents

D. J. Miller, J. G. Hu, J. D. Hettinger, K. E. Gray, J. E. Tkaczyk, J. DeLuca, P. L. Karas, J. A. Sutliff, and M. F. Garbauskas

Appl. Phys. Lett. 63, 556 (1993); http://dx.doi.org/10.1063/1.110003 (3 pages) | Cited 9 times

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Microstructural studies of TlBa2Ca2Cu3Ox(Tl‐1223) thick films that exhibit high critical current densities (Jc) for nonepitaxial polycrystalline materials show that these films possess a ‘‘brick‐wall’’ structure that may be partly responsible for high current densities. The magnetic field dependence of Jc is similar to that reported for Bi‐Sr‐Ca‐Cu‐O materials that exhibit this structure. Structural analyses indicate a high degree of c‐axis alignment but little in‐plane texture, suggesting that high‐angle [001] tilt boundaries are prevalent. Scanning and transmission electron microscopy reveal that the microstructure consists of overlapping layers reminiscent of the brick‐wall structure. These results suggest that high critical current densities may be achieved by percolative transport through this structure.
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74.25.Sv Critical currents
74.72.-h Cuprate superconductors
74.81.Bd Granular, melt-textured, amorphous, and composite superconductors

Integrated high‐transition temperature magnetometer with only two superconducting layers

R. Kromann, J. J. Kingston, A. H. Miklich, L. T. Sagdahl, and John Clarke

Appl. Phys. Lett. 63, 559 (1993); http://dx.doi.org/10.1063/1.110781 (3 pages) | Cited 12 times

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We describe the fabrication and testing of an integrated YBa2Cu3O7−x thin‐film magnetometer consisting of a dc superconducting quantum interference device (SQUID), with biepitaxial grain boundary junctions, integrated with a flux transformer on a single substrate. Only two superconducting layers are required, the SQUID body serving as the crossunder that completes the multiturn flux transformer. The highest temperature at which any of the magnetometers functioned was 76 K. At 60 K the magnetic field gain of this device was 63, and the magnetic field noise was 160 fT Hz−1/2 at 2 kHz, increasing to 3.4 pT Hz−1/2 at 1 Hz.
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85.25.Dq Superconducting quantum interference devices (SQUIDs)
74.50.+r Tunneling phenomena; Josephson effects
74.78.-w Superconducting films and low-dimensional structures
74.72.-h Cuprate superconductors

7Ni‐O chemical interaction and the transition temperature of Ni‐doped Bi2Sr2Ca1Cu2O8

P. Alméras, B. Keszei, H. Berger, L. Forro, G. Margaritondo, and F. Bussy

Appl. Phys. Lett. 63, 562 (1993); http://dx.doi.org/10.1063/1.110004 (3 pages)

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We find that even very low Ni doping levels of high‐quality Bi2Sr2Ca1Cu2O8 single crystals strongly affect the transition temperature Tc. We also observed that Tc is not related to the total Ni concentration, but only to that of Ni engaged in NiO‐type bonds. By controlling the temperature during crystal growth, one can modify the relative weight of Ni in NiO‐type bonds with respect to other configurations—and therefore Tc.
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74.62.Dh Effects of crystal defects, doping and substitution
74.72.-h Cuprate superconductors
81.10.-h Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
FREE

Comment on ‘‘Temperature dependence of the radiative lifetime in porous silicon’’

Martin Rosenbauer, Heinz Fuchs, and Martin Stutzmann

Appl. Phys. Lett. 63, 565 (1993); http://dx.doi.org/10.1063/1.110005 (2 pages) | Cited 10 times

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78.55.Hx Other solid inorganic materials
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.47.-p Spectroscopy of solid state dynamics
FREE

Response to‘‘ Comment on ‘Temperature dependence of the radiative lifetime in porous silicon’ ’’

G. L. J. A. Rikken, G. W. t’Hooft, Y. A. R. R. Kessener, and A. H. J. Venhuizen

Appl. Phys. Lett. 63, 566 (1993); http://dx.doi.org/10.1063/1.110006 (1 page) | Cited 2 times

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Abstract Unavailable
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78.55.Hx Other solid inorganic materials
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.47.-p Spectroscopy of solid state dynamics
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