Inductively coupled plasmas (ICPs) are currently being investigated as high density (≳1011–1012 cm−3), low pressure (<1–20 mTorr) sources for semiconductor etching and deposition. We have developed a two‐dimensional (r,z) hybrid model for ICP sources and have used the model to investigate Ar/CF4/O2 mixtures for etching applications. The simulation consists of electromagnetic, electron Monte Carlo, and hydrodynamic modules with an ‘‘off‐line’’ plasma chemistry Monte Carlo simulation. The model produces the temporally and spatially dependent magnetic and electric fields (both inductively and capacitively coupled), plasma densities, and the energy resolved flux of ions and radicals to the substrate. We discuss results for densities, power deposition, and ion energies to the substrate as a function of position.