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2 Aug 1993

Volume 63, Issue 5, pp. 571-704

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Carrier dynamics and emission‐line narrowing in n‐ and p‐type molecular‐beam grown ZnSe epilayers

J. A. Bolger, A. K. Kar, B. S. Wherrett, K. A. Prior, J. Simpson, S. Y. Wang, and B. C. Cavenett

Appl. Phys. Lett. 63, 571 (1993); http://dx.doi.org/10.1063/1.109980 (3 pages) | Cited 3 times

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Carrier recombination processes in thin‐film epitaxial ZnSe are investigated using a transient‐grating technique. For photoexcitation levels in the 1017–1018 cm−3 range the dominant recombination mechanism is found to be radiative, described by a rate coefficient of 8×10−9 cm3 s−1. For densities exceeding approximately 2×1018 cm−3 ultrafast grating recovery is observed, accompanied by line narrowing of the near‐band‐edge blue photoluminescence; this is interpreted as being due to stimulated radiative recombination.
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78.47.-p Spectroscopy of solid state dynamics
78.66.Hf II-VI semiconductors
78.55.Et II-VI semiconductors

Deposition of amorphous BaTiO3 optical films at low temperature

W.‐T. Liu, S. T. Lakshmikumar, D. B. Knorr, T.‐M. Lu, and Ir. Gerard A. van der Leeden

Appl. Phys. Lett. 63, 574 (1993); http://dx.doi.org/10.1063/1.109981 (3 pages) | Cited 7 times

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A reactive partially ionized beam technique has been used to deposit amorphous BaTiO3 films at room temperature. The procedure employing independently controlled evaporation and ionization of Ba and TiO has been optimized to produce highly transparent films. Films deposited on quartz or glass show 100% optical transmission over the visible wavelengths with respect to the substrate. The refractive index can be varied over a range of 1.9–2.0 by varying the Ba/Ti ratio without effecting the optical transparency. Films with refractive indices up to 2.4 can be deposited but the optical transmission decreases. The best optical properties are obtained for films with near stoichiometric Ba/Ti ratio. Annealing at temperatures less than 500 °C leads to densification of the films with a 2%–3% decrease in film thickness. The anneal increases the refractive index marginally. The optical band gap of the films was calculated from the experimental transmission plots. The Eg value of 4.6±0.1 eV for stoichiometric films decreases to 4.3 eV for nonstoichiometric films.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
78.66.Jg Amorphous semiconductors; glasses

New fabrication method for highly oriented J aggregates dispersed in polymer films

Kazuhiko Misawa, Hiroshi Ono, Kaoru Minoshima, and Takayoshi Kobayashi

Appl. Phys. Lett. 63, 577 (1993); http://dx.doi.org/10.1063/1.109954 (3 pages) | Cited 58 times

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We present a new fabrication method, called ‘‘vertical spin coating,’’ to prepare highly oriented J aggregates dispersed in polymer films. Linear dichroic spectra of the oriented J aggregate of 1,1′‐diethyl‐2,2′‐quinocyanine bromide PIC‐Br were measured at 5 K. The dichroic ratio at the peak of J band was 5 to 10, dependent on the preparation conditions. Precise measurement of the dichroism at the J band revealed that the J band is composed of two bands with transition dipole moments perpendicular to each other. The films are stable even at room temperature, and have applications as nonlinear optical devices.
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78.66.Qn Polymers; organic compounds
42.70.Jk Polymers and organics
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Partially coherent light generated by using single and multimode optical fibers in a high‐power Nd:glass laser system

H. Nakano, N. Miyanaga, K. Yagi, K. Tsubakimoto, T. Kanabe, M. Nakatsuka, and S. Nakai

Appl. Phys. Lett. 63, 580 (1993); http://dx.doi.org/10.1063/1.109955 (3 pages) | Cited 22 times

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A simple and flexible method is presented for generating a partially coherent light which obtains the highly smooth focused beam pattern. The beam divergence of 32 times diffraction limited light having a spectral width of 1.6 nm has been easily and reproducibly achieved by injecting a laser pulse from an actively mode‐locked Nd:YLF oscillator to a single mode optical fiber, coupled to a multimode optical fiber. Temporal evolution of the beam smoothing due to the induced incoherency was examined with temporally resolved measurements of the beam pattern. The partially coherent light was focused through a random phase plate after the amplification. Small‐scale intensity perturbation in a focused beam pattern was greatly reduced.
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42.60.-v Laser optical systems: design and operation
42.81.Wg Other fiber-optical devices

Pulse shaping using spectral filtering in gain‐switched quantum well laser diodes

N. Yamada and Y. Nakagawa

Appl. Phys. Lett. 63, 583 (1993); http://dx.doi.org/10.1063/1.109956 (3 pages) | Cited 2 times

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This letter describes how to eliminate the long trailing edges from the gain‐switched optical pulses in GaAs multiple quantum well lasers simultaneously operating at both the first and second quantized states. By filtering out the emission of the first quantized transition, nearly symmetrical pulses were obtained along with pulse‐width reductions, while peak power was at least 50% that of the original pulse. The experimental results are qualitatively explained by the theoretical calculations.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

111 kW (0.5 mJ) pulse amplification at 1.5 μm using a gated cascade of three erbium‐doped fiber amplifiers

B. Desthieux, R. I. Laming, and D. N. Payne

Appl. Phys. Lett. 63, 586 (1993); http://dx.doi.org/10.1063/1.109957 (3 pages) | Cited 17 times

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The generation of high peak power pulses by amplification of the output from a distributed feedback diode laser is demonstrated using a cascade of three erbium‐doped fiber amplifiers (EDFAs) separated by an acousto‐optic gate. The optimized amplifier chain consisted of two high efficiency single‐mode EDFAs pumped with 40 mW at 980 nm, followed by a multimode EDFA pumped with 1.5 W at 978 nm. At low repetition rates, peak output powers of 111 kW and energies of 0.5 mJ at 1.534 μm were obtained.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.81.Wg Other fiber-optical devices
42.55.Wd Fiber lasers

Spectral linewidth reduction in partly gain‐coupled 1.55 μm strained multiple quantum‐well distributed feedback laser

H. Lu, G. P. Li, and T. Makino

Appl. Phys. Lett. 63, 589 (1993); http://dx.doi.org/10.1063/1.109958 (3 pages) | Cited 6 times

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The effective linewidth enhancement factor αeff and the spectral linewidth Δυ are reported for the first time for a partly gain‐coupled distributed feedback laser with a gain corrugation in a strained multiple quantum‐well active region emitting at 1.55 μm wavelength. The αeff value is estimated to be as low as 1 and is independent of the laser cavity length L, while a decrease in the linewidth‐power product ΔυPo with L has been observed, with a measured linewidth of 2 MHz at 10 mW optical output power for 300‐μm‐long devices. The experimental results demonstrate that a small αeff is obtained due to the strain and the gain coupling effects, while further reduction of the spectral linewidth with L is the result of longitudinal index coupling effects.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Photoluminescence spectra of Zn3P2‐Cd3P2 thin films

A. Nayak and D. R. Rao

Appl. Phys. Lett. 63, 592 (1993); http://dx.doi.org/10.1063/1.110779 (2 pages) | Cited 5 times

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Photoluminescence (PL) spectra of electron beam evaporated (ZnxCd1−x)3P2 thin films with composition (x) equal to 0.0, 0.2, 0.4, 0.5, 0.8, and 1.0 have been recorded at 100 K. The radiative transitions associated with the different PL peaks are correlated considering the distribution of native defects which act either as acceptor (A)‐ or donor (D)‐like centers. In the case of (Zn0.5Cd0.5)3P2 films, which showed some satellite structure, the emission at 0.92 eV is related to the DA pairs (associated phosphorous interstitials and vacancies) with the distance of separation estimated in the range of 10–30 Å.
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78.55.Hx Other solid inorganic materials
78.66.Li Other semiconductors
71.55.Ht Other nonmetals
73.61.Le Other inorganic semiconductors

Organic photo‐ and electroluminescent devices with double mirrors

Takahiro Nakayama, Yuzo Itoh, and Atsushi Kakuta

Appl. Phys. Lett. 63, 594 (1993); http://dx.doi.org/10.1063/1.109959 (2 pages) | Cited 66 times

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Luminescent spectra of organic thin films sandwiched with two mirrors were measured in an effort to detect optical microcavity effects. Narrowing and enhancement of photoluminescent spectra were observed from the tri‐(8‐hydroxyquinolinol)aluminum monolayer with the mirrors at both sides. Furthermore, the narrowing of spectra was also observed from electroluminescent devices fabricated with two mirrors.  
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78.66.Qn Polymers; organic compounds
78.60.Fi Electroluminescence
78.55.Kz Solid organic materials
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Electro‐optic properties of single crystalline ferroelectric thin films

D. H. Reitze, E. Haton, R. Ramesh, S. Etemad, D. E. Leaird, T. Sands, Z. Karim, and A. R. Tanguay

Appl. Phys. Lett. 63, 596 (1993); http://dx.doi.org/10.1063/1.109960 (3 pages) | Cited 25 times

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We have investigated the transverse and longitudinal electro‐optic properties of epitaxial single crystalline lead lanthanum zirconate titanate ferroelectric thin films grown by pulsed laser deposition on [100] silicon and MgAl2O4 substrates. With the electric field applied in a longitudinal geometry, we measure birefringence shifts of up to 1×10−3. These films exhibit a large optical hysteresis, and may provide a basis for electrically written, optically and nondestructively read nonvolatile memories.
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77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Near‐infrared electrochromism in LixC60 films

J. D. Klein, A. Yen, R. D. Rauh, and S. L. Clauson

Appl. Phys. Lett. 63, 599 (1993); http://dx.doi.org/10.1063/1.109961 (3 pages) | Cited 4 times

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Fullerene thin films deposited on transparent substrates were found to exhibit electrochromic switching in the near infrared. The as‐deposited films were optically transparent between 0.9 and 2.0 μm. The oxidation state of the fullerene films was altered by electrochemical insertion of Li ions from a liquid electrolyte. Upon Li insertion the transmittance of the films decreased markedly in the near infrared. Subsequent Li extraction restored most of the original transparency. The observed electrochromism occurs due to switching between the C60 and C601− oxidation states. Electrochemically, the insertion process is highly reversible. The lack of complete optical reversibility is attributed to solubility of C601− in the electrolyte employed.
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78.66.Nk Insulators
82.45.-h Electrochemistry and electrophoresis
61.72.J- Point defects and defect clusters
42.65.Pc Optical bistability, multistability, and switching, including local field effects

Emission of GHz shear waves by ferroelastic domain walls in ferroelectrics

G. Arlt, U. Böttger, and S. Witte

Appl. Phys. Lett. 63, 602 (1993); http://dx.doi.org/10.1063/1.109962 (3 pages) | Cited 35 times

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The 90° domain walls and comparable ferroelectric domain walls are strong sound emitters in the GHz range. The elastic medium on both sides of the domain wall with its mass and elastic properties is a quasi‐infinite transmission line into which the sound is emitted. This emission causes a strong dielectric dispersion at GHz frequencies and may form the basis for many dispersive effects in this frequency range which were observed during the last 40 years in many ferroelectric and even some magnetic materials. A simple elastic‐electric equivalent circuit describes the mechanism of sound emission.
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43.38.Fx Piezoelectric and ferroelectric transducers
77.80.-e Ferroelectricity and antiferroelectricity

Two‐dimensional hybrid model of inductively coupled plasma sources for etching

Peter L. G. Ventzek, Timothy J. Sommerer, Robert J. Hoekstra, and Mark J. Kushner

Appl. Phys. Lett. 63, 605 (1993); http://dx.doi.org/10.1063/1.109963 (3 pages) | Cited 78 times

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Inductively coupled plasmas (ICPs) are currently being investigated as high density (≳1011–1012 cm−3), low pressure (<1–20 mTorr) sources for semiconductor etching and deposition. We have developed a two‐dimensional (r,z) hybrid model for ICP sources and have used the model to investigate Ar/CF4/O2 mixtures for etching applications. The simulation consists of electromagnetic, electron Monte Carlo, and hydrodynamic modules with an ‘‘off‐line’’ plasma chemistry Monte Carlo simulation. The model produces the temporally and spatially dependent magnetic and electric fields (both inductively and capacitively coupled), plasma densities, and the energy resolved flux of ions and radicals to the substrate. We discuss results for densities, power deposition, and ion energies to the substrate as a function of position.  
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52.65.-y Plasma simulation
52.80.Pi High-frequency and RF discharges
85.40.Hp Lithography, masks and pattern transfer

Novel mechanism for high speed growth of transparent and conducting tin oxide thin films by spray pyrolysis

L. Kameswara Rao and V. Vinni

Appl. Phys. Lett. 63, 608 (1993); http://dx.doi.org/10.1063/1.109964 (3 pages) | Cited 9 times

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A novel mechanism is proposed for efficient manipulation of transport forces acting on the droplets during spray pyrolytic deposition of thin films. A ‘‘burst mode’’ technique of spraying is used to adjust the deposition conditions so as to transport the droplets under the new mechanism. Transparent, conducting thin films of undoped tin oxide prepared by this method showed significant improvement in growth rate. The films are found to be of fairly good quality with optical transmission of 82% and sheet resistance of 35 Ω/☒. The films are chemically homogeneous and grow preferentially along 〈200〉 direction.
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81.15.Rs Spray coating techniques

Silicon dioxide thin films prepared by chemical vapor deposition from tetrakis (dimethylamino)silane and ozone

Toshiro Maruyama and Toshimasa Shirai

Appl. Phys. Lett. 63, 611 (1993); http://dx.doi.org/10.1063/1.109965 (3 pages) | Cited 7 times

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Silicon dioxide thin films were prepared by a low‐temperature atmospheric‐pressure chemical vapor deposition method. The raw materials were tetrakis(dimethylamino)silane and ozone in oxygen gas. At a substrate temperature above 40 °C, the thin films were obtained with a high deposition rate.  
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Insulating nanoparticles on YBa2Cu3O7−δ thin films revealed by comparison of atomic force and scanning tunneling microscopy

R. E. Thomson, J. Moreland, N. Missert, D. A. Rudman, S. C. Sanders, and B. F. Cole

Appl. Phys. Lett. 63, 614 (1993); http://dx.doi.org/10.1063/1.109966 (3 pages) | Cited 6 times

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The surface topography of YBa2Cu3O7−δ thin films has been studied with both atomic force microscopy (AFM) and scanning tunneling microscopy (STM). The AFM images reveal a high density of small distinct nanoparticles, 10–50 nm across and 5–20 nm high, which do not appear in STM images of the same samples. In addition, we have shown that scanning the STM tip across the surface breaks off these particles and moves them to the edge of the scanned area, where they can later be imaged with the AFM.
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68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
74.78.-w Superconducting films and low-dimensional structures
74.72.-h Cuprate superconductors
68.55.-a Thin film structure and morphology

Noncontact force microscopy in liquids

R. Giles, J. P. Cleveland, S. Manne, P. K. Hansma, B. Drake, P. Maivald, C. Boles, J. Gurley, and V. Elings

Appl. Phys. Lett. 63, 617 (1993); http://dx.doi.org/10.1063/1.109967 (2 pages) | Cited 28 times

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Force microscopy in liquids offers many advantages including the mitigation of capillary forces and the simulation of real environments for biological and technological processes. Noncontact force microscopy in liquids adds the advantage of probing electrical and magnetic fields above surfaces. Here we demonstrate magnetic force imaging of recorded bits on a computer hard disk in air and in liquid. A method of noncontact force microscopy (patent pending, Digital Instruments) is used in which the tip is first scanned in contact to image topography and then rescanned above the surface to image long‐range forces.
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68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
75.70.Rf Surface magnetism
68.35.B- Structure of clean surfaces (and surface reconstruction)

Evidence for structural similarities between chemical vapor deposited and neutron irradiated SiO2

R. A. B. Devine and M. Marchand

Appl. Phys. Lett. 63, 619 (1993); http://dx.doi.org/10.1063/1.109968 (3 pages) | Cited 16 times

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Raman spectroscopy, infrared absorption, and refractive index measurements have been carried out on films of amorphous SiO2 deposited by plasma enhanced chemical vapor deposition from SiH4 and N2O gases. It is demonstrated that the films have physical characteristics different from those of thermally grown or bulk oxide. Comparison with the data obtained from neutron irradiated, bulk SiO2 leads to the conclusion that deposited oxides and heavily neutron irradiated oxides have a similar and unusual network structure. In this network the Si—O—Si bond angles are substantially reduced (∼10°) with respect to bulk and relaxed silica. The three membered ring density is significantly enhanced and there is a considerably larger fraction of free volume. These structures coincide with materials having a fictive temperature in excess of 2400 °C and it is argued that they are analogous to the porosil structure known in crystalline forms of SiO2.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
61.43.Fs Glasses
78.35.+c Brillouin and Rayleigh scattering; other light scattering

Thermal conductivity in molten‐metal‐etched diamond films

S. Jin, L. H. Chen, J. E. Graebner, M. McCormack, and M. E. Reiss

Appl. Phys. Lett. 63, 622 (1993); http://dx.doi.org/10.1063/1.109969 (3 pages) | Cited 16 times

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Substantial thinning of chemical vapor deposited diamond films has been accomplished by a diffusional transfer of carbon atoms from diamond to molten rare‐earth metals. Cerium and lanthanum are particularly useful because of their large liquid solubility of carbon. The perpendicular thermal conductivity of the processed diamond film (after removal of about 40 μm from the bottom surface) is remarkably improved from ∼14–15 to about 20–22 W/cm °C, a value approaching that of high‐quality Type IIa single crystal diamond. The in‐plane conductivity, on the other hand, is improved only slightly because of the anisotropic microstructure. The improvement in conductivity implies that few phonon scattering centers are introduced by the thinning process, for example, through grain boundary contamination by metal atoms.
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81.65.-b Surface treatments
66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves
66.30.Ny Chemical interdiffusion; diffusion barriers

Electronic passivation of n‐ and p‐type GaAs using chemical vapor deposited GaS

Massood Tabib‐Azar, Soon Kang, Andrew N. MacInnes, Michael B. Power, Andrew R. Barron, Phillip P. Jenkins, and Aloysius F. Hepp

Appl. Phys. Lett. 63, 625 (1993); http://dx.doi.org/10.1063/1.109970 (3 pages) | Cited 30 times

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We report on the electronic passivation of n‐ and p‐type GaAs using chemical vapor deposited cubic GaS. Au/GaS/GaAs fabricated metal‐insulator‐semiconductor (MIS) structures exhibit classical high‐frequency capacitor versus voltage (C‐V) behavior with well‐defined accumulation and inversion regions. Using high‐ and low‐frequency C‐V, the interface trap densities of ∼1011 eV−1 cm−2 on both n‐ and p‐type GaAs are determined. The electronic condition of GaS/GaAs interface did not show any deterioration after a six week time period.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.20.At Surface states, band structure, electron density of states
85.30.Tv Field effect devices

Strained‐layer InSb/GaSb quantum wells grown by metalorganic vapor phase epitaxy

L. Q. Qian and B. W. Wessels

Appl. Phys. Lett. 63, 628 (1993); http://dx.doi.org/10.1063/1.109971 (3 pages) | Cited 16 times

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InSb/GaSb quantum well structures have been prepared by atmospheric pressure metalorganic vapor phase epitaxy. Strong sharp photoluminescence emission peaks with a full width at half‐ maximum of 6–11 meV were obtained for the quantum well structures with well thicknesses of 0.35–0.88 nm, suggesting nearly atomically planar interfaces. The observed photoluminescence transition energies are in excellent agreement with the calculated values using a standard finite square well model taking into account strain. A broadening of the predominant photoluminescence emission peak was observed for quantum well structures with well thicknesses above 1 nm, indicating nonplanar growth.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.-a Thin film structure and morphology
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors

Coulomb blockade in silicon based structures at temperatures up to 50 K

D. J. Paul, J. R. A. Cleaver, H. Ahmed, and T. E. Whall

Appl. Phys. Lett. 63, 631 (1993); http://dx.doi.org/10.1063/1.109972 (2 pages) | Cited 19 times

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Coulomb blockade has been observed in the current‐voltage characteristics of structures fabricated in silicon germanium δ‐doped material at temperatures up to 50 K. This is consistent with the estimated effective tunnel capacitance of 10 aF which is significantly smaller than the reported capacitances of tunnel junctions made from Al or GaAs/AlGaAs heterostructures.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Gk Tunneling
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices

Below band‐gap electroabsorption in bulk semi‐insulating GaAs

J. C. Adams, C. D. Capps, R. A. Falk, and S. G. Ferrier

Appl. Phys. Lett. 63, 633 (1993); http://dx.doi.org/10.1063/1.109973 (3 pages) | Cited 6 times

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Electroabsorption measurements of bulk semi‐insulating GaAs using a pulsed applied voltage are presented for the wavelength range 890–920 nm and compared with results of the same measurement using a dc applied voltage. In the latter case, field inhomogeneities in the GaAs gives a spatially dependent absorption which thwarts extraction of the absorption coefficient versus electric field. We circumvent this problem by transiently measuring the absorption during a pulsed bias voltage when the field in the sample is nearly uniform.
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78.20.Jq Electro-optical effects
78.30.Fs III-V and II-VI semiconductors

Minority‐carrier mobility enhancement in p+ InGaAs lattice matched to InP

E. S. Harmon, M. L. Lovejoy, M. R. Melloch, M. S. Lundstrom, D. Ritter, and R. A. Hamm

Appl. Phys. Lett. 63, 636 (1993); http://dx.doi.org/10.1063/1.109974 (3 pages) | Cited 11 times

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Minority electron mobilities in p+‐In0.53Ga0.47As have been measured with the zero field time‐of‐flight technique. The room‐temperature (297 K) minority electron mobilities for p+‐In0.53Ga0.47As doped 0.9 and 3.1×1019 cm−3 are found to be 2900 and 3300 cm2 V−1 s−1, respectively. These are the first measurements to demonstrate enhancement in minority‐carrier mobility as doping is increased for heavily doped In0.53Ga0.47As. This enhancement in mobility as doping is increased is similar to that observed in p+‐GaAs, which has been attributed to reductions in plasmon and carrier–carrier scattering between minority electrons and majority holes.
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72.20.Fr Low-field transport and mobility; piezoresistance
72.80.Ey III-V and II-VI semiconductors
85.30.Pq Bipolar transistors

Oxidation enhanced diffusion in Si B‐doping superlattices and Si self‐interstitial diffusivities

H.‐J. Gossmann, C. S. Rafferty, H. S. Luftman, F. C. Unterwald, T. Boone, and J. M. Poate

Appl. Phys. Lett. 63, 639 (1993); http://dx.doi.org/10.1063/1.109975 (3 pages) | Cited 59 times

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A special thin film structure has been grown by low temperature molecular beam epitaxy for an investigation of the properties of self‐interstitials in Si. It consists of a doping superlattice made from B spikes separated from each other by 100 nm of Si. After dry oxidation, the width of each spike is directly proportional to the interstitial concentration at that depth. The superlattice as a whole thus gives a depth profile of the time‐averaged interstitial concentration, allowing the direct determination of the diffusion coefficient of interstitials. The abrupt dopant concentration transitions possible in low‐temperature molecular‐beam‐epitaxy‐grown films allow this investigation in the temperature range 750–900 °C. At 800 °C we find a value of DI=(1.4±0.4)10−13 cm2/s. Performing the experiments as a function of temperature yields DI = D0eEa/kT with D0=102±2 cm2/s and Ea=(3.1±0.4) eV.
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61.72.J- Point defects and defect clusters
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
61.72.Yx Interaction between different crystal defects; gettering effect
66.30.J- Diffusion of impurities
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