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2 Aug 1993

Volume 63, Issue 5, pp. 571-704

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Velocity modulation in focused‐ion‐beam written in‐plane‐gate transistors

T. Bever, K. v. Klitzing, A. D. Wieck, and K. Ploog

Appl. Phys. Lett. 63, 642 (1993); http://dx.doi.org/10.1063/1.109976 (3 pages) | Cited 2 times

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The mobility of a one‐dimensional electron gas can be changed markedly by moving the electron path from the high‐mobility channel toward the low‐mobility focused ion‐beam‐implanted regions. This can be done simply by applying different biases to the two adjacent in‐plane gates. When the bias voltage on one gate is fixed, we increase the other gate potential and force the current path close to the ion‐implanted region. In this way the mobility rather than the density of the carriers is controlled, which is the key feature of the velocity modulation transistors with inherently fast response.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Dn Low-field transport and mobility; piezoresistance
85.30.Tv Field effect devices

Optical beam deflection imaging of the electron beam interaction volume in semiconductors

G. Y. Chang, R. B. Givens, J. W. M. Spicer, R. Osiander, and J. C. Murphy

Appl. Phys. Lett. 63, 645 (1993); http://dx.doi.org/10.1063/1.109977 (3 pages) | Cited 1 time

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The distribution of electrons injected into CdS in a scanning electron microscope is imaged using an optical beam deflection technique. The contributions to the deflection due to carrier density, electron recombination, thermalization, and diffusion are identified for both pulsed and periodically modulated electron beams. The electron interaction volumes are analyzed to determine the energy dependence of the primary electron range and the lateral spread, presumably due to scattering of fast secondary electrons. The electron distributions are compared with Monte Carlo simulations.
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68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Photoemissions related to the kink effect in GaAs metal‐semiconductor field‐effect transistors with an Al0.2Ga0.8As/GaAs buffer layer

Junzi Haruyama, Norio Goto, and Yasunobu Nashimoto

Appl. Phys. Lett. 63, 648 (1993); http://dx.doi.org/10.1063/1.109978 (3 pages) | Cited 5 times

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Photoemissions related to the ‘‘kink’’ effect are observed in GaAs metal‐semiconductor field‐effect transistors with an Al0.2Ga0.8As/GaAs heterostructure buffer layer. In drain voltage (VDS) regions lower than the kink VDS, the photoemission mainly results from the bremsstrahlung radiation because the energy spectrum is broad between 1.1 and 1.8 eV. Near the kink VDS, photoemission results from the direct recombination process of holes generated by the impact ionization because it has a peak near at 1.4 eV. In addition, at VDS’s higher than the kink VDS, the photo intensity, as well as the drain current, saturates. It is explained by the equilibrium of the hole generation/recombination, the accumulation, and the hole current flow into the substrate.
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79.70.+q Field emission, ionization, evaporation, and desorption
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Tv Field effect devices

Improved Al/InP Schottky barriers by coimplantation of Be/P

Ritu Tyagi, T. P. Chow, J. M. Borrego, and K. A. Pisarczyk

Appl. Phys. Lett. 63, 651 (1993); http://dx.doi.org/10.1063/1.109979 (3 pages) | Cited 5 times

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Improved Al/InP Schottky barriers are formed on n‐InP by using coimplantation of Be/P. The doped surface layer (Be) helps in retarding the surface fields, resulting in larger Schottky barrier heights. The addition of phosphorus prevents excessive P loss and enhances the percentage of Be activation. A Schottky barrier height as high as 0.64 eV has been obtained, as compared to 0.55 eV for diodes without P implantation. The ideality factor is found to be very close to unity (≊1.08). The reverse leakage current density is reduced by almost four orders of magnitude. To demonstrate the versatility of our process, the same technique is applied to p‐InP samples. As expected, the barrier height is reduced by almost 0.5 eV. Furthermore, the sum of the two Schottky barrier heights also matches closely with the theoretical value of energy band gap for InP.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.20.At Surface states, band structure, electron density of states
73.40.Cg Contact resistance, contact potential

Observation of deep donor center related tunneling peak in the AlxGa1−xAs/AlAs/AlxGa1−xAs/AlAs/AlxGa1−xAs (0.40≤x≤0.50) resonant tunneling diodes

Tung‐Ho Shieh and Si‐Chen Lee

Appl. Phys. Lett. 63, 654 (1993); http://dx.doi.org/10.1063/1.109947 (3 pages)

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The tunneling peak due to electron transport through deep donor (DX) centers was observed in the AlxGa1−xAs/AlAs/AlxGa1−xAs/AlAs/AlxGa1−xAs resonant tunneling diodes (0.40≤x≤0.50). Since the carriers are frozen out in AlxGa1−xAs (x≥0.35) at low temperature, the current‐voltage (I‐V) characteristics can only be measured under laser illumination condition. It was found that this DX center related tunneling peak initially appeared at higher voltage when the laser was turned on, and it gradually shifted to lower voltage over several minutes. This peak eventually merged into the lower voltage tunneling peak at temperature below 76 K, but stayed apart at higher temperature. This unusual behavior is attributed to the simultaneous existence of the impurity band formed by the metastable DX states associated with X band [DX(X)] and their isolated double charged states [DX−(X)]. This tunneling peak is not observed when the AlAs mole fraction x is reduced to 0.35.
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71.55.Eq III-V semiconductors
73.40.Gk Tunneling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Composition dependence of the in‐plane effective mass in lattice‐mismatched, strained Ga1−xInxAs/InP single quantum wells

B. K. Meyer, M. Drechsler, C. Wetzel, V. Härle, F. Scholz, H. Linke, P. Omling, and P. Sobkowicz

Appl. Phys. Lett. 63, 657 (1993); http://dx.doi.org/10.1063/1.109948 (3 pages) | Cited 10 times

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The composition dependence of the in‐plane conduction band effective mass in strained 15‐nm‐thick lattice‐mismatched Ga1−xInxAs/InP single quantum wells was determined by conventional cyclotron and optically detected cyclotron resonance techniques. Our results are in agreement with a self‐consistent calculation taking into account effects due to nonparabolicity, confinement, strain, and finite two‐dimensional carrier densities.
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71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Electron transport properties of Si/SiGe heterostructures: Measurements and device implications

K. Ismail, S. F. Nelson, J. O. Chu, and B. S. Meyerson

Appl. Phys. Lett. 63, 660 (1993); http://dx.doi.org/10.1063/1.109949 (3 pages) | Cited 80 times

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We report electron transport properties of modulation‐doped Si/SiGe at 300 and 77 K. Record mobilities of 2830 and 18 000 cm2/V s at 300 and 77 K, respectively, have been measured. Depending on the spacer layer thickness, the sheet resistance of the Si channel is in the range of 2000–10 000 Ω/☒ at 300 K and 450–700 Ω/☒ at 77 K. The low field electron drift velocity is 2–3 (5–10) times higher than the corresponding velocity measured in Si/SiO2 structures at 300 K (77 K). The saturation velocity is measured to be only 5% higher than in bulk Si, at both 300 and 77 K, but appears at a lower electric field. The effect of the enhanced transport properties in modulation‐doped Si/SiGe on device design and performance is investigated.  
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Dn Low-field transport and mobility; piezoresistance
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Nitrogen doping in AlGaP grown by metalorganic vapor phase epitaxy using ammonia

K. Adomi, N. Noto, A. Nakamura, and T. Takenaka

Appl. Phys. Lett. 63, 663 (1993); http://dx.doi.org/10.1063/1.109950 (3 pages) | Cited 3 times

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Doping characteristics of nitrogen in AlGaP grown by metalorganic vapor phase epitaxy have been investigated using ammonia as the nitrogen source. It was found that nitrogen could be successfully incorporated into AlGaP up to as much as 1×1020/cm3 assisted by the gas phase parasitic reaction between trimethylaluminum and ammonia, while nitrogen incorporation into GaP was difficult. Nitrogen incorporation was found to be dependent on several factors such as ammonia concentration, Al composition, V/III ratio, and growth temperature. Exciton recombination bound to isoelectronic nitrogen in AlGaP was observed for the first time by photoluminescence measurement.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors

Femtosecond carrier dynamics in the presence of a cold plasma in GaAs and AlGaAs

L. H. Acioli, M. Ulman, F. Vallée, and J. G. Fujimoto

Appl. Phys. Lett. 63, 666 (1993); http://dx.doi.org/10.1063/1.109951 (3 pages) | Cited 7 times

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The femtosecond dynamics of hot carriers interacting with a cold high density electron‐hole plasma are investigated in GaAs and Al0.2Ga0.8As. Studies are performed using a three pulse pump‐probe technique where a cold plasma is first generated by a femtosecond pulse, then pump‐probe transmission measurements are performed after a few hundred picoseconds delay. The results indicate only a small increase of the hot carrier thermalization rate even for plasma densities as high as 1018 cm−3.
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78.47.-p Spectroscopy of solid state dynamics
78.66.Fd III-V semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Localization at imperfect interfaces and its role in optical spectra of quantum well structures

M. Jaros and A. W. Beavis

Appl. Phys. Lett. 63, 669 (1993); http://dx.doi.org/10.1063/1.109952 (3 pages) | Cited 11 times

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We present microscopic calculations that show that some of the novel features recently found in the luminescence spectra of quantum well structures (e.g., Si‐SiGe, GaAs‐GaAlAs, ZnSe‐ZnCdSe) can be accounted for by electron localization at small interface islands.
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78.66.-w Optical properties of specific thin films
78.55.-m Photoluminescence, properties and materials
73.20.Fz Weak or Anderson localization
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Si‐SiO2 interface trap density in boron‐ and phosphorus‐implanted silicon

S. Peterström

Appl. Phys. Lett. 63, 672 (1993); http://dx.doi.org/10.1063/1.109953 (3 pages) | Cited 4 times

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The Si‐SiO2 interface trap density has been measured in boron‐ and phosphorus‐implanted silicon. The implantations were made either prior to the oxidation process or through the gate oxide layer. In the boron implantation case the lowest number of interface traps for a specified substrate concentration was reached if the implantation was made through the gate oxide. In the phosphorus implantation case it is, however, favorable to make the implantation prior to the oxidation process.
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73.20.At Surface states, band structure, electron density of states
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
61.72.uf Ge and Si
85.40.Hp Lithography, masks and pattern transfer

Atomic‐scale planarization of SiO2/Si(001) interfaces

Masaaki Niwa, Masaharu Udagawa, Kenji Okada, Takashi Kouzazki, and Robert Sinclair

Appl. Phys. Lett. 63, 675 (1993); http://dx.doi.org/10.1063/1.109926 (3 pages) | Cited 5 times

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Atomically flat silicon‐oxide interfaces were obtained after preparing the Si(001)‐2×1 reconstructed surface in ultrahigh vacuum (UHV) followed by native oxide growth and then conventional thermal oxidation. When the surface is prepared with conventional wet cleaning prior to oxidation, the flat interfaces initially tend to become rough and then smoother with increasing oxide thickness. In comparison with the conventional interfaces, UHV surface planarization is significant up to oxide thicknesses of about 8 nm. This thickness range will be extremely important for future ultralarge‐scale integrated circuits (ULSIs).
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81.65.-b Surface treatments
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology

Scanning tunneling microscopy observation of monolayer steps on GaAs(001) vicinal surfaces grown by metalorganic chemical vapor deposition

Makoto Kasu, Naoki Kobayashi, and Hiroshi Yamaguchi

Appl. Phys. Lett. 63, 678 (1993); http://dx.doi.org/10.1063/1.109927 (3 pages) | Cited 10 times

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Using scanning tunneling microscopy (STM), we have observed monolayer steps for the first time on (001)GaAs vicinal surfaces grown by metalorganic chemical vapor deposition (MOCVD). The surface was passivated with As to protect it from air during the transfer from the MOCVD to the STM. We found that the monolayer step edges on the surface misoriented in the [110] direction undulate with about 2 times larger amplitude than the surface misoriented in the [110] direction.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Evidence for the spectral dependence of nonequilibrium picosecond photoresponse of YBaCuO thin films

A. D. Semenov, I. G. Goghidze, G. N. Gol’tsman, A. V. Sergeev, and E. M. Gershenzon

Appl. Phys. Lett. 63, 681 (1993); http://dx.doi.org/10.1063/1.109928 (3 pages) | Cited 15 times

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The transient voltage photoresponse of current biased YBaCuO thin films to 20 ps laser pulses of 0.63 and 1.54 μm wavelengths is measured for temperatures around the superconducting transition region. The fast picosecond decay of the response is followed by a slow nanosecond relaxation which is associated with the bolometric effect. The magnitude of the fast component of the response varies in proportion to the square root of wavelength that plausibly reflects multiplication processes of photoexcited electrons via electron–electron scattering and interaction with high energy phonons.
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74.25.N- Response to electromagnetic fields
73.50.Pz Photoconduction and photovoltaic effects
74.78.-w Superconducting films and low-dimensional structures
74.72.-h Cuprate superconductors

Electric field effect on the artificial grain boundary of bicrystal YBa2Cu3O7−δ films

Kensuke Nakajima, Kazuki Yokota, Hiroaki Myoren, Jian Chen, and Tsutomu Yamashita

Appl. Phys. Lett. 63, 684 (1993); http://dx.doi.org/10.1063/1.109929 (3 pages) | Cited 16 times

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An ability of the artificial grain boundary of bicrystal YBa2Cu3O7−δ thin films is demonstrated as the field effect channel of high Tc field effect devices. The influence of field application on the channel resistance is examined with a metal‐insulator‐semiconductor‐type structure, in which a channel is arranged across the grain boundary. The field‐induced change in the resistance of the grain boundary is enhanced up to around 5% by lowering temperature below Tc of adjoining YBa2Cu3O7−δ grains. The enhancement is explained not only by an increase in the dielectric constant of the gate insulator (SrTiO3) but also by a reduction in the carrier density nearby the grain boundary. The latter is indeed a benefit to high Tc field effect devices.
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85.25.Qc Superconducting surface acoustic wave devices and other superconducting devices
85.30.Tv Field effect devices
74.78.-w Superconducting films and low-dimensional structures
74.72.-h Cuprate superconductors

Low‐temperature YBa2Cu4O8‐to‐YBa2Cu3O7 decomposition process for enhanced intra‐ and intergrain critical current densities in Y‐Ba‐Cu‐O/Ag composites

Nae‐Lih Wu, Hon‐Da Yu, Yeong Der Yao, and Eli Ruckenstein

Appl. Phys. Lett. 63, 687 (1993); http://dx.doi.org/10.1063/1.109930 (3 pages)

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When bulk YBa2Cu4O8 (the 124 compound)/Ag composites were subjected to the high‐temperature (900–920 °C) 124‐to‐123 (YBa2Cu3O7−δ) decomposition process, the intergrain Jc of the composite was found to decrease dramatically in spite of significant enhancement in the intragrain one. The decrease in the intergrain Jc was attributed primarily to the incongruent melting of the resulted 123 phase at grain boundaries via interactions with the Cu‐O precipitates and Ag. On the other hand, by conducting the decomposition process at lower temperatures in subatmospheric oxygen pressures where melting of 123 is avoided, enhancement in both intra‐ and intergrain Jc s can be achieved. Decomposition carried out at 700 °C in 2.5 Torr of oxygen, for example, has produced a 30‐fold increase in the intragrain Jc (1.5×106 A/cm2 at 40 K and H=0.5 T) and a nearly twofold increase in the intergrain one. A phase diagram showing other viable conditions, including temperature and oxygen pressure for such a low‐temperature approach, is proposed.
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74.25.Sv Critical currents
74.25.Uv Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)
74.81.Bd Granular, melt-textured, amorphous, and composite superconductors
74.72.-h Cuprate superconductors

Influence of silver cladding on the formation and alignment of the (Bi2−xPbx)Sr2Ca2Cu3O10+δ phase

J. S. Luo, N. Merchant, V. A. Maroni, G. N. Riley, and W. L. Carter

Appl. Phys. Lett. 63, 690 (1993); http://dx.doi.org/10.1063/1.110778 (3 pages) | Cited 30 times

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Cross‐section transmission electron microscopy was used to investigate the interaction of silver with (Bi,Pb)‐Sr‐Ca‐Cu‐O phases during the formation of (Bi2−xPbx)Sr2Ca2Cu3O10+δ (Bi‐2223) in a silver‐sheathed wire containing a powder composed of (Bi,Pb)2Sr2CaCu2O8+δ (Bi‐2212) plus second phases. Observations of the interfacial regions of samples quenched at different stages of conversion revealed that (1) Bi‐2212 is initially in direct contact with silver, with the (001) planes parallel to the interface; (2) an amorphous layer between Bi‐2212 and silver appears during the induction period that precedes the conversion reaction; and (3) Bi‐2223 is detected at the silver/powder interface hundreds of minutes before it begins to appear in regions of the powder away from the interface. The implications of these results are presented and discussed.
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74.25.Sv Critical currents
74.72.-h Cuprate superconductors
74.81.Bd Granular, melt-textured, amorphous, and composite superconductors
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation

The irreversibility line of HgBa2CuO4+δ

U. Welp, G. W. Crabtree, J. L. Wagner, D. G. Hinks, P. G. Radaelli, J. D. Jorgensen, J. F. Mitchell, and B. Dabrowski

Appl. Phys. Lett. 63, 693 (1993); http://dx.doi.org/10.1063/1.109931 (3 pages) | Cited 36 times

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Using magnetization hysteresis loops we have determined the irreversibility line of polycrystalline samples of HgBa2CuO4+δ and Hg0.8Pb0.2Ba2CuO4+δ. The irreversibility line is found at rather high temperatures. It does not show the drastic depression with increasing temperature as is observed in highly anisotropic Bi/Tl‐based CuO superconductors. At 77 K the irreversibility field is around 0.3 T, which is substantially higher than in Bi2Sr2CaCu2O8 and Bi2Sr2Ca2Cu3O10. The advantages of this material for large‐scale applications are outlined.
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74.25.Uv Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)
74.25.Sv Critical currents
74.72.-h Cuprate superconductors

Epitaxial MnGa/NiGa magnetic multilayers on GaAs

M. Tanaka, J. P. Harbison, T. Sands, B. Philips, T. L. Cheeks, J. De Boeck, L. T. Florez, and V. G. Keramidas

Appl. Phys. Lett. 63, 696 (1993); http://dx.doi.org/10.1063/1.109932 (3 pages) | Cited 19 times

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We have grown a new class of epitaxial metallic multilayers consisting of ultrathin ferromagnetic tetragonal MnGa and nonmagnetic (CsCl‐type) NiGa on (001) GaAs substrates by molecular beam epitaxy. Reflection high energy electron diffraction and cross‐sectional transmission electron microscopy analyses show that MnGa/NiGa multilayers with atomically abrupt interfaces are formed with the expected epitaxial orientations, and, in particular, that the c‐axis of the tetragonal structure of the MnGa film is aligned perpendicular to the substrate. Perpendicular magnetization of the MnGa/NiGa multilayers was evidenced by both vibrating sample magnetometer and extraordinary Hall effect measurements at room temperature, with higher values (Mr=267–302 emu/cm3) of remanent magnetization than those of previously reported MnGa and MnAl thin films. The capability of growing this new class of materials will allow a new degree of artificial materials design on semiconductor substrates.
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75.70.-i Magnetic properties of thin films, surfaces, and interfaces
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)

Dependence of femtosecond single‐photon photoemission from gold on laser beam incidence and polarization

J. P. Girardeau‐Montaut, C. Girardeau‐Montaut, S. D. Moustaizis, and C. Fotakis

Appl. Phys. Lett. 63, 699 (1993); http://dx.doi.org/10.1063/1.109933 (3 pages) | Cited 6 times

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We report here the measurements of single‐photon photoelectric emission sensitivity of gold irradiated with 450 fs laser pulses at 248 nm and discuss the dependence of this sensitivity on the angle of incidence and the states of polarization of the laser beam. We compare our experimental data to the predictions from both the vectorial photoemission theory and the single‐photon absorption corresponding to a pure energy coupling.
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79.60.-i Photoemission and photoelectron spectra
79.20.Ds Laser-beam impact phenomena

Field emission from an elliptical boss: Exact versus approximate treatments

K. L. Jensen and E. G. Zaidman

Appl. Phys. Lett. 63, 702 (1993); http://dx.doi.org/10.1063/1.109934 (3 pages) | Cited 4 times

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Field emission from tips, in comparison to planar surfaces, is complicated by current enhancement effects and changes in the image charge. We show that the approximations typically used for the calculation of the transmission coefficient are inappropriate for small spherical surfaces but adequate for elliptical surfaces. A simple analytical formula for the average emitting area may be derived based on the Fowler–Nordheim equation under conditions of field emission. By use of the elliptical approximation, a simple scale factor is sufficient to deal with spherical and pointed tips.
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79.70.+q Field emission, ionization, evaporation, and desorption
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