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Applied Physics Letters / Volume 63 / Issue 7

Appl. Phys. Lett. 63, 976 (1993); http://dx.doi.org/10.1063/1.109863 (3 pages)

Temperature dependence of ion beam mixing in GaAs, AlAs, and GaAs/AlAs/GaAs

J. L. Klatt1, R. S. Averback1, D. V. Forbes2, and J. J. Coleman2

1Department of Materials Science and Engineering, Materials Research Laboratory, University of Illinois at Urbana‐Champaign, Urbana, Illinois 61801
2Materials Research Laboratory, Microelectronics Laboratory, University of Illinois at Urbana‐Champaign, Urbana, Illinois 61801

(Received 25 June 1992; accepted 18 February 1993)

Ion beam mixing of AlAs markers in GaAs and GaAs markers in AlAs has been measured as a function of irradiation temperature with 1 MeV Kr ions. The mixing parameter in the GaAs matrix was ≊140 Å5/eV at temperatures between 110 and 473 K, but dropped to ≊120 Å5/eV at 573 K. The value was smaller in the AlAs matrix, ≊90 Å5/eV between 110 and 473 K, but it increased to ≊120 Å5/eV between 473 and 625 K. Ion beam mixing in a trilayer sample, GaAs/AlAs/GaAs, was also measured for comparison. At the deeper interface, AlAs on GaAs, and low temperature, the mixing parameter was 440 Å5/eV, but only 250 Å5/eV at the other interface, GaAs on AlAs. Mixing at the lower interface decreased at 573 K to 160 Å5/eV while it decreased at 473 K at the other interface to 110 Å5/eV. These results are interpreted on the basis of the influence of crystal structure on ion beam mixing.

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KEYWORDS and PACS

Keywords

GALLIUM ARSENIDES, ALUMINIUM ARSENIDES, HETEROJUNCTIONS, PHYSICAL RADIATION EFFECTS, INTERFACES, MIXING, MEV RANGE 01−10, KRYPTON IONS, TEMPERATURE DEPENDENCE

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.109863

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

For access to fully linked references, you need to log in.
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