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30 Aug 1993

Volume 63, Issue 9, pp. 1161-1293

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Optical intensity modulation in a vertically stacked coupler incorporating electro‐optic polymer

Makoto Hikita, Yoshito Shuto, Michiyuki Amano, Ryoko Yoshimura, Satoru Tomaru, and Haruki Kozawaguchi

Appl. Phys. Lett. 63, 1161 (1993); http://dx.doi.org/10.1063/1.109809 (3 pages) | Cited 34 times

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A vertically stacked directional coupler incorporating electro‐optic poled polymer was fabricated by spin coating, photolithography, and reactive ion etching processes, based on the fabrication technique used for polymeric single‐mode channel waveguides. Vertically coupled operation at 1.3 μm have been achieved between two stacked channels which were kept 3.5–5 μm apart by a narrow cladding layer. The intensity modulation has been clearly demonstrated in the coupler with electrodes when a voltage is applied at 10 kHz between them.
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42.79.Hp Optical processors, correlators, and modulators
42.79.Gn Optical waveguides and couplers
42.82.Cr Fabrication techniques; lithography, pattern transfer
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Novel surface emitting GaAs/AlGaAs laser diodes based on surface mode emission

A. Köck, A. Seeberg, M. Rosenberger, C. Gmachl, E. Gornik, C. Thanner, and L. Korte

Appl. Phys. Lett. 63, 1164 (1993); http://dx.doi.org/10.1063/1.109810 (3 pages) | Cited 5 times

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We present a novel concept to achieve surface emission from conventional semiconductor laser diodes. This new type of laser diode is modified to allow a coupling of the laser mode to a transverse electric polarized surface mode. As a result we achieve surface emission from GaAs/AlGaAs double heterostructure laser diodes with a beam divergence of 0.2%. This novel concept has a high potential for the realization of a beam steering device.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Domain inversion in KTiOPO4 using electron beam scanning

Mool C. Gupta, W. P. Risk, Alan C. G. Nutt, and S. D. Lau

Appl. Phys. Lett. 63, 1167 (1993); http://dx.doi.org/10.1063/1.109811 (3 pages) | Cited 19 times

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Domain inversion in c‐cut KTiOPO4 was produced by scanning an electron beam on the −c face. The domain reversal occurred through the 1 mm thickness of the sample. Second‐harmonic conversion efficiency of 7×10−5 was measured for a fifth‐order grating by focusing the beam to a 7 μm spot in a 500‐μm‐long domain‐inverted KTP crystal. This efficiency is close to the theoretical value of 9×10−5. The measured phase matching bandwidth was 1.9 nm, which is in agreement with the theoretical value of 1.5 nm indicating that the domain‐inverted grating is reasonably uniform over its entire length.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
61.80.Fe Electron and positron radiation effects
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Wavelength conversions ∼1.5 μm by difference frequency generation in periodically domain‐inverted LiNbO3 channel waveguides

C. Q. Xu, H. Okayama, K. Shinozaki, K. Watanabe, and M. Kawahara

Appl. Phys. Lett. 63, 1170 (1993); http://dx.doi.org/10.1063/1.109812 (3 pages) | Cited 31 times

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Wavelength conversions ∼1.5 μm are realized by difference frequency generation in periodically domain‐inverted LiNbO3 channel waveguides for the first time. A wide wavelength conversion bandwidth, which is very important for future wavelength division multiplexing optical communication system, is demonstrated in this kind of devices.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Dispersion of second‐order optical properties of new high thermal stability guest chromophores

R. F. Shi, M. H. Wu, S. Yamada, Y. M. Cai, and A. F. Garito

Appl. Phys. Lett. 63, 1173 (1993); http://dx.doi.org/10.1063/1.109813 (3 pages) | Cited 12 times

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A new class of high thermal stability fused‐ring guest chromophores intended for incorporation into highly stable host polyimides has been successfully developed. Thermal stabilities far in excess of 300 °C have been achieved for both the pure guest and the parent guest‐host systems. dc‐induced second harmonic generation measurements of the microscopic second order β of the guest chromophores in solution have been performed using an optical parametric generation technique. In the near‐infrared region, values of the standard product μβ of order 103×10−48 esu have been observed. These values are in good agreement with quantum many‐electron calculations.
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.70.Jk Polymers and organics
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Refractive index fluctuations in deformed Ti:LiNbO3 waveguides due to SiO2 overlayer deposition

Hirotoshi Nagata, Kazumasa Kiuchi, and Tohru Sugamata

Appl. Phys. Lett. 63, 1176 (1993); http://dx.doi.org/10.1063/1.109789 (3 pages) | Cited 5 times

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During the fabrication process of Ti:LiNbO3 optical modulators, the deformation into a convex configuration of the LiNbO3 wafer occurs after the deposition of the micrometer‐thick SiO2 buffer layer. This deformation remains in the modulator chip and possibly generates the strain in the waveguides. The strain induced change of refractive index (Δn) in the waveguide is estimated from consideration of the piezo‐optic effect. This Δn is on the order of 10−5 and is close to that due to the electro‐optic effect. The corresponding optical phase retardation is in agreement with measured values.
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42.79.Gn Optical waveguides and couplers
68.60.Bs Mechanical and acoustical properties
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects

Terahertz four‐wave mixing spectroscopy for study of ultrafast dynamics in a semiconductor optical amplifier

Jianhui Zhou, Namkyoo Park, Jay W. Dawson, Kerry J. Vahala, Michael A. Newkirk, and Barry I. Miller

Appl. Phys. Lett. 63, 1179 (1993); http://dx.doi.org/10.1063/1.109763 (3 pages) | Cited 54 times

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Ultrafast dynamics in a 1.5‐μm tensile‐strained quantum‐well optical amplifier has been studied by highly nondegenerate four‐wave mixing at detuning frequencies up to 1.7 THz. Frequency response data indicate the presence of two ultrafast physical processes with characteristic relaxation lifetimes of 650 fs and <100 fs. The longer time constant is believed to be associated with the dynamic carrier heating effect. This is in agreement with previous time‐domain pump‐probe measurements using ultrashort optical pulses.
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42.55.Px Semiconductor lasers; laser diodes
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
78.47.-p Spectroscopy of solid state dynamics

Electronic structure of aluminum nitride: Theory and experiment

S. Loughin, R. H. French, W. Y. Ching, Y. N. Xu, and G. A. Slack

Appl. Phys. Lett. 63, 1182 (1993); http://dx.doi.org/10.1063/1.109764 (3 pages) | Cited 39 times

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We report the results of a vacuum ultraviolet (VUV) study of single crystal and polycrystalline AlN over the range 4–40 eV and compare these with theoretical optical properties calculated from first principles using an orthogonalized linear combination of atomic orbitals in the local density approximation. The electronic structure of AlN has a two‐dimensional (2D) character indicated by logarithmic divergences at 8.7 and 14 eV. These mark the centers of two sets of 2D critical points which are associated with N 2p→Al 3s transitions and Al=N→Al 3p transitions, respectively. A third feature is centered at 33 eV and associated with N 2s→Al 3d transitions.  
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78.40.Ha Other nonmetallic inorganics
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds

Laser operation‐induced migration of beryllium at mirrors of GaAs/AlGaAs laser diodes

A. Jakubowicz, A. Oosenbrug, and Th. Forster

Appl. Phys. Lett. 63, 1185 (1993); http://dx.doi.org/10.1063/1.109765 (3 pages) | Cited 6 times

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Laser operation‐induced migration of beryllium at laser mirrors was studied by electron‐beam‐induced current. The devices investigated were single quantum well graded index separate confinement GaAs/AlGaAs ridge geometry laser diodes. In these devices, an operation‐induced displacement of the p‐n junction towards the n‐type cladding has been observed close to the mirrors. A similar effect was induced by electron irradiation of the mirror facets in a scanning electron microscope. These effects have been attributed to recombination‐enhanced diffusion/migration of beryllium from the p‐type cladding. We have measured the diffusion coefficient of beryllium and, from this value, have estimated the average mirror temperature during laser operation. This temperature was found to be in excellent agreement with recently published measured mirror temperatures.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Mi Dynamical laser instabilities; noisy laser behavior
66.30.J- Diffusion of impurities

Surface acoustic wave soliton propagating on the metallic grating waveguide

Yasuo Cho and Nozomu Miyagawa

Appl. Phys. Lett. 63, 1188 (1993); http://dx.doi.org/10.1063/1.109766 (3 pages) | Cited 13 times

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The surface acoustic wave (SAW) soliton of the Korteweg–de Vries (KdV)‐type propagating on the metallic grating waveguide has been observed experimentally. The periodic train of two solitons developed from the continuous sine wave of SAW. A large‐amplitude soliton caught up with a small‐amplitude soliton and these two solitons recombined into the initial sine wave at the recurrence point. The observed wave forms agreed with the calculated ones very well which were obtained by solving the KdV equation and satisfied the first conservation law of the KdV equation.
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43.25.Rq Solitons, chaos
43.25.Fe Effect of nonlinearity on acoustic surface waves

Photoelectric quantum yield of nanometer metal particles

B. Schleicher, H. Burtscher, and H. C. Siegmann

Appl. Phys. Lett. 63, 1191 (1993); http://dx.doi.org/10.1063/1.109767 (3 pages) | Cited 12 times

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The absolute photoelectric quantum yield of nanometer metal particles (Ni, Pd, Cu, Ag, Au) is measured from threshold up to photon energies hν of 10 eV. The particles are produced and measured in ultrapure helium at atmospheric pressure. Yield Y and photothreshold ϕ are compared to bulk data. The shape of Y(hν) is similar for particle and bulk with all investigated materials except Ag. All metals have in common that the particle yield is larger by a factor ≊100 compared to the bulk yield. Apart from electrostatic corrections due to the image and Coulomb potential, the photoelectric threshold is identical for the bulk and the particle.
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79.60.-i Photoemission and photoelectron spectra

In situ diagnostics of pulsed laser deposition of ferroelectric Pb(Ti0.48Zr0.52)O3 on Si

A. Iembo, F. Fuso, M. Allegrini, E. Arimondo, V. Berardi, N. Spinelli, F. Leccabue, B. E. Watts, G. Franco, and G. Chiorboli

Appl. Phys. Lett. 63, 1194 (1993); http://dx.doi.org/10.1063/1.109768 (3 pages) | Cited 20 times

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The transport of material from target to substrate has been monitored in the pulsed laser deposition of Pb(Ti0.48Zr0.52)O3 films on p‐doped Si(100) using two in situ diagnostics, namely plume fluorescence spectroscopy and plume ion mass spectrometry. The as‐grown PZT films are specular, with thicknesses which decrease from 350 to 250 nm on a radius 5 mm from the center and show a dielectric hysteresis with typical remanent polarizations and coercive fields of 0.2 μC/cm2 and 124 kV/cm, respectively. The analysis of the plume fluorescence emission and ionic yield indicates that oxidation of the ablated material occurs during transport from target to substrate and that, in order to grow ferroelectric thin films, the substrate should be located in the region of the plume where the relative concentrations of metal oxides and clusters increase.
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81.15.Fg Pulsed laser ablation deposition
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.-e Ferroelectricity and antiferroelectricity

Observations on interfacial segregation and precipitation of arsenic‐doped polycrystalline silicon on silicon (100) substrate

Chih‐Hang Tung, Kay‐Yuan Lee, Ray‐Chern Deng, and Lurng‐Sheng Lee

Appl. Phys. Lett. 63, 1197 (1993); http://dx.doi.org/10.1063/1.109769 (3 pages) | Cited 1 time

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The interface structural evolution of arsenic‐doped polycrystalline silicon thin films on a silicon (100) single crystal substrate was studied by cross‐sectional high resolution transmission electron microscopy and secondary ion mass spectrometry. Native silicon dioxide thin film was observed to agglomerate into discrete oxide particles along with stable arsenic‐oxygen compound precipitates. Arsenic influence upon the interfacial evolution is discussed.
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68.55.-a Thin film structure and morphology
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)

Studies of dynamic magnetostriction by time‐resolved scanning fiber interferometry

M. R. Freeman and G. Nunes

Appl. Phys. Lett. 63, 1200 (1993); http://dx.doi.org/10.1063/1.109770 (3 pages) | Cited 6 times

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Measurements of the magnetostrictive response of nickel cylinders to sudden step changes in applied magnetic field are performed with a time‐resolved scanning fiber interferometer. A crossover is observed, as a function of decreasing cylinder diameter, from eddy current‐ to longitudinal phonon‐limited response times. Spatially resolved measurements reveal the nonuniform distortion of the face of the rod as the induced magnetization propagates in toward the center. The results demonstrate, here in the context of magnetics, the general promise of time‐resolved scanning probe methods.
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68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
75.80.+q Magnetomechanical effects, magnetostriction
78.47.-p Spectroscopy of solid state dynamics

Atomic‐force‐microscopic study of heteroepitaxial diamond nucleation on (100) silicon

X. Jiang, K. Schiffmann, A. Westphal, and C.‐P. Klages

Appl. Phys. Lett. 63, 1203 (1993); http://dx.doi.org/10.1063/1.109771 (3 pages) | Cited 37 times

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To understand the mechanism of heteroepitaxial diamond growth, the early stage of diamond nucleation, generated in a microwave plasma on negatively biased single crystalline (100) silicon substrates, was observed by atomic force microscopy. The results show that nonfacetted nuclei are initially formed whose size increases with deposition time. Reflection high energy electron diffraction reveals that the nuclei are of crystalline structure in spite of their very small height of about 5 nm. A critical radius of the nuclei rc seems to exist under conditions applied in this study. The initial nuclei have a preferential (100) orientation. By a proper control of the nucleation and growth process, however, one can allow the epitaxially generated nuclei to reach rc and to grow larger.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy

Boron‐implanted 6H‐SiC diodes

Mario Ghezzo, Dale M. Brown, Evan Downey, James Kretchmer, and Joseph J. Kopanski

Appl. Phys. Lett. 63, 1206 (1993); http://dx.doi.org/10.1063/1.109772 (3 pages) | Cited 30 times

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Ion implanted planar p‐n junctions are important for silicon carbide discrete devices and integrated circuits. Conversion to p‐type of n‐type 6H‐SiC was observed for the first time using boron implantation. Diodes were fabricated with boron implants at 25 and 1000 °C, followed by 1300 °C post‐implant annealing in a furnace. The best diodes measured at 21 °C exhibited an ideality factor of 1.77, reverse bias leakage of 10−10 A/cm2 at −10 V, and a record high (for a SiC‐implanted diode) breakdown voltage of −650 V.
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61.72.up Other materials
71.55.Ht Other nonmetals
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.80.Jc Other crystalline inorganic semiconductors

Visible light emission from a pn junction of porous silicon and microcrystalline silicon carbide

Toshiro Futagi, Takahiro Matsumoto, Masakazu Katsuno, Yasumitsu Ohta, Hidenori Mimura, and Koich Kitamura

Appl. Phys. Lett. 63, 1209 (1993); http://dx.doi.org/10.1063/1.109773 (2 pages) | Cited 24 times

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We have fabricated a new type of light‐emitting diode based on a porous silicon and microcrystalline silicon carbide pn junction. The visible light emission from 580 to 820 nm with a peak of 700 nm was observed at forward bias voltages larger than 18 V, and the emission was quite uniform over an area of 1 cm2.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Growth and characterization of serpentine superlattices in the GaSb‐AlSb system

K. C. Wong, Mohan Krishnamurthy, Berinder Brar, Jong Chang Yi, Herbert Kroemer, and John H. English

Appl. Phys. Lett. 63, 1211 (1993); http://dx.doi.org/10.1063/1.109774 (3 pages) | Cited 1 time

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We report the growth of GaSb/AlSb serpentine superlattices (SSLs) on vicinal GaAs and GaSb substrates. Cross‐sectional transmission electron microscopy confirms the SSL structure and shows excellent lateral uniformity, better than previous arsenide‐SSLs. Photoluminescence (PL) measurements indicate a good‐quality lateral superlattice with a spectral linewidth between 13 and 15 meV. Polarization‐dependent PL measurements give a normalized linear polarization around 60%, the strongest that has been seen for SSL structures. Preliminary estimates suggest much better segregation between the Ga‐rich and Al‐rich regions than arsenide‐SSLs, with the change in aluminum concentration Δx≊0.35.
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68.55.-a Thin film structure and morphology
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.55.Cr III-V semiconductors

High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction

M. Asif Khan, A. Bhattarai, J. N. Kuznia, and D. T. Olson

Appl. Phys. Lett. 63, 1214 (1993); http://dx.doi.org/10.1063/1.109775 (2 pages) | Cited 269 times

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In this letter we report the fabrication and dc characterization of a high electron mobility transistor (HEMT) based on a n‐GaN‐Al0.14Ga0.86N heterojunction. The conduction in our low pressure metalorganic chemical vapor deposited heterostructure is dominated by two‐dimensional electron gas at the heterostructure interface. HEMT devices were fabricated on ion‐implant isolated mesas using Ti/Au for the source drain ohmic and TiW for the gate Schottky. For a device with a 4 μm gate length (10 μm channel opening, i.e., source‐drain separation), a transconductance of 28 mS/mm at 300 K and 46 mS/mm at 77 K was obtained at +0.5 V gate bias. Complete pinchoff was observed for a −6 V gate bias.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

In situ optical investigation of the etching process in the silicon HCl system

Y. Ohshita and N. Hosoi

Appl. Phys. Lett. 63, 1216 (1993); http://dx.doi.org/10.1063/1.109776 (3 pages) | Cited 5 times

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Surface reactions in Si(100) etching with HCl gas are studied using the surface photoabsorption (SPA) method and a quadrupole mass spectrometer. The adsorption of Cl atoms on the Si surface causes the intensity of the SPA signal to increase, when HCl gas is supplied. After HCl gas injection is stopped, the signal intensity decreases due to the etching reactions. By studying the time constants and the activation energies, two types of etching reactions are found. Below 1000 K, the etching products are SiCl4, and the activation energy for this etching process is estimated at about 22 kcal/mol. On the other hand, above 1000 K, mainly SiCl2 molecules are desorbed from the Si surface, and the activation energy is evaluated to be 59 kcal/mol.
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81.65.-b Surface treatments
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Resonant tunneling of X‐band electrons from AlAs through GaAs/AlAs/GaAs double barrier structure

Tung‐Ho Shieh and Si‐Chen Lee

Appl. Phys. Lett. 63, 1219 (1993); http://dx.doi.org/10.1063/1.109777 (3 pages) | Cited 3 times

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The negative differential resistance entirely due to X‐band electron tunneling through the X‐band profile in an AlAs/GaAs/AlAs/GaAs/AlAs diode which uses the AlAs as the X‐band electrodes and tunneling well and the GaAs as the X‐band barriers is observed. Two small inflection points in the current‐voltage curve are measured at 8.8 K at low biases (24 and −48 mV) which disappear above 30 K. These peaks are found to be due to the Xl (normal to the interface) electrons in the AlAs electrode tunneling through the quasiquantized state of Xl valley in the AlAs well. Two tunneling peaks with negative differential resistance are also observed at 8.8 K which disappears above 100 K. The tunneling peak current density is 3.1 A cm−2 at a bias of −0.18 V and the peak to valley ratio is 1.4. This peak is attributed to the Xt (parallel to the interface) electrons in the AlAs electrode tunneling through the quasiquantized state of Xt valley in the AlAs well.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.40.Gk Tunneling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Dephasing of three‐ and two‐dimensional magnetoexcitons in InxGa1−xAs

T. Rappen, G. Mohs, and M. Wegener

Appl. Phys. Lett. 63, 1222 (1993); http://dx.doi.org/10.1063/1.109778 (3 pages) | Cited 10 times

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We investigate the dephasing of three‐ and two‐dimensional magnetoexcitons in InxGa1−xAs at low temperatures by femtosecond four‐wave mixing. In both cases the dephasing time T2 increases substantially with magnetic field. For a cyclotron energy one order of magnitude larger than the three‐dimensional exciton binding energy, T2 rises by a factor of about 4. This is interpreted in terms of a considerably reduced scattering cross section of the 1s magnetoexciton due to the magnetic confinement.
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78.47.-p Spectroscopy of solid state dynamics
71.35.-y Excitons and related phenomena
78.20.Ls Magneto-optical effects

Low temperature silicon epitaxy in an ultrahigh vacuum rapid thermal chemical vapor deposition reactor using disilane

Mahesh K. Sanganeria, Katherine E. Violette, and Mehmet C. Öztürk

Appl. Phys. Lett. 63, 1225 (1993); http://dx.doi.org/10.1063/1.109779 (3 pages) | Cited 17 times

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Epitaxial silicon films have been deposited by a new technique which combines an ultrahigh vacuum (UHV) environment with rapid thermal chemical vapor deposition (RTCVD). The technique is referred to as UHV/RTCVD. Using Si2H6, B2H6, and H2 as process gases, low temperature (T≤800 °C) and high throughput (growth rate ≳0.25 μm/min) processing have been achieved in the 90 mTorr (1 Pa=133.32 Torr) total pressure regime. Epitaxial growth was achieved on hydrogen passivated silicon surfaces without using a high temperature in situ clean. Effect of the growth temperature on the generation lifetime of the films grown on 4–11 Ω cm (100) silicon substrates was studied at three different temperatures of 700, 750, and 800 °C using the Zerbst technique. The epitaxial films were in situ doped with boron to a doping level of 1–2×1016 cm−3. Generation lifetimes, as high as 400 μs, were measured with no strong dependence on the growth temperature. Chemical purity of the films was studied using secondary ion mass spectroscopy, which indicated low oxygen and carbon levels on the order of 1017 cm −3.
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68.55.-a Thin film structure and morphology

Evolution of monolayer terrace topography during metalorganic chemical vapor deposition of (100) GaAs

J. E. Epler and H. P. Schweizer

Appl. Phys. Lett. 63, 1228 (1993); http://dx.doi.org/10.1063/1.109780 (3 pages) | Cited 9 times

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The evolution of surface topography during epitaxial growth of GaAs on (100) GaAs substrate is observed using angle‐resolved elastic light scattering within a metalorganic chemical vapor deposition reactor. The temporal and orientation dependence of diffuse (nonspecular) optical scattering is determined at growth initiation, during steady state growth, and at growth conclusion. Phenomena such as persistent monolayer oscillations in surface roughness, nucleation delay, and [011] step development are observed. The influence of substrate miscut, growth temperature, and rate is discussed.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Semi‐insulating nature of gas source molecular beam epitaxial InGaP grown at very low temperatures

D. C. Look, Y. He, J. Ramdani, N. El‐Masry, and S. M. Bedair

Appl. Phys. Lett. 63, 1231 (1993); http://dx.doi.org/10.1063/1.109781 (3 pages) | Cited 12 times

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InxGa1−xP lattice matched to GaAs (x≂0.51) has proven to be useful in many device applications. Here we show that undoped, semi‐insulating InGaP is possible by growing with gas source molecular beam epitaxy at very low temperatures, 150–250 °C. The material grown at about 200 °C is n‐type with a 296‐K resistivity of 9×105 Ω cm, a mobility of 120 cm2/V s, and a donor activity energy of 0.48 eV. When annealed at 600 °C for 1 h, the resistivity increases to greater than 109 Ω cm and the resistivity activation energy to 0.8 eV.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.61.Ey III-V semiconductors
71.55.Eq III-V semiconductors
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