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30 Aug 1993

Volume 63, Issue 9, pp. 1161-1293

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Aluminium layers as nonalloyed contacts to p‐type GaAs

F. W. Ragay, M. R. Leys, and J. H. Wolter

Appl. Phys. Lett. 63, 1234 (1993); http://dx.doi.org/10.1063/1.109782 (3 pages) | Cited 8 times

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We have investigated the electrical characteristics of a metallic aluminum layer, deposited on top of heavily doped p‐type GaAs, as a means of fabricating nonalloyed ohmic contacts to epitaxial semiconductor structures. The aluminum layer was deposited immediately after growth by molecular beam epitaxy (MBE) of a beryllium‐doped GaAs layer, i.e., without exposing the sample to air, or by deposition of an aluminum layer on the same sample in conventional vacuum evaporation equipment. Both types of structures were characterized via the transmission line model (TLM) to obtain the contact resistivity of such nonalloyed ohmic contacts. It appears that planar tunneling contacts grown entirely in an MBE process show contact resistance values which are comparable to alloyed contacts.
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73.40.Cg Contact resistance, contact potential
73.40.Ns Metal-nonmetal contacts
68.55.-a Thin film structure and morphology

New degradation mechanism associated with hydrogen in bipolar transistors under hot carrier stress

P. K. Gopi, G. P. Li, G. J. Sonek, J. Dunkley, D. Hannaman, J. Patterson, and S. Willard

Appl. Phys. Lett. 63, 1237 (1993); http://dx.doi.org/10.1063/1.109783 (3 pages) | Cited 6 times

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Avalanche hot carrier induced bipolar device degradation as a function of temperature, current density, and time is reported. The observed drift in emitter‐base breakdown voltage (Vebo) is found to be well correlated to changes in forward base (Ib) and collector (Ic) currents. The model of hydrogen release from the Si‐SiO2 interface and its subsequent passivation of base dopants during hot carrier stress is proposed to account for such a correlation.
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85.30.Pq Bipolar transistors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Excitonic transitions in InGaP/InAlGaP strained quantum wells

R. P. Schneider, R. P. Bryan, E. D. Jones, and J. A. Lott

Appl. Phys. Lett. 63, 1240 (1993); http://dx.doi.org/10.1063/1.110772 (3 pages) | Cited 14 times

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Excitonic transitions in metalorganic vapor phase epitaxially grown InxGa1−xP/In0.48(Al0.7Ga0.3)0.52P strained single quantum‐well structures are characterized using low‐temperature photoluminescence and photoluminescence excitation (PLE) spectroscopies. The structures consist of several uncoupled quantum wells with thicknesses between 1.2 and 11.3 nm, and compositions x of 0.48 (nominally lattice matched) and 0.56 (∼0.6% biaxial compressive strain). The photoluminescence spectra exhibit intense peaks over the wavelength range 550–650 nm, with linewidths between 7 and 23 meV depending on the well thickness. The PLE spectra reveal strong heavy‐hole and light‐hole transitions, as well as higher‐order (n=2) transitions in the thicker wells. The heavy‐hole/light‐hole splitting shows little dependence on well thickness in the strained structures, indicating a relatively large conduction band offset of ΔEC∼0.75ΔEG.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Strain studies of silicon‐germanium epilayers on silicon substrates using Raman spectroscopy

F. Lu, C. H. Perry, F. Namavar, N. L. Rowell, and R. A. Soref

Appl. Phys. Lett. 63, 1243 (1993); http://dx.doi.org/10.1063/1.109784 (3 pages) | Cited 7 times

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Atmospheric pressure chemical vapor deposition techniques have been used to grow electronic quality Si‐Ge epilayers on Si substrates. The degree of tetragonal strain in the layers has been determined using Raman spectroscopy. The relative energy shift of the Si‐Si phonon line associated with the Si1−xGex epilayers from a pseudoalloy of the same composition was used as a quantitative measure of the strain. Layer growth was found to be almost commensurate with the Si substrates for thicknesses in the region of ∼100 nm. For x≂0.1 the resulting films were highly strained and homogeneous. The strain diminished with increasing thickness and it was estimated that a layer would be fully relaxed when the thickness exceeded 3000 nm. The phonon linewidths provided information on the epilayer and interface quality.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.30.Hv Other nonmetallic inorganics

Effect of ultraviolet irradiation upon the recombination lifetime of silicon wafers covered with a dielectric film

L. Zhong, K. Ando, H. Tsuya, and F. Shimura

Appl. Phys. Lett. 63, 1246 (1993); http://dx.doi.org/10.1063/1.109785 (3 pages) | Cited 4 times

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The effect of UV irradiation upon the recombination lifetime of silicon covered with chemical vapor deposition (CVD) oxide has been studied using a laser‐microwave photoconductance (LM‐PC) technique. It is found that the lifetime changes little after the first UV irradiation, but dramatically decreases following thermal annealing at 500 K for 1 h. Moreover, the lifetime can be cycled up and down by repeated irradiation and thermal annealing. A comparison is made of the UV irradiation effect upon the lifetime of silicon wafers covered with a variety of different dielectric films. It is suggested that UV rechargeable defects are present in a CVD oxide film, like in native oxide and CVD nitride, but are absent in thermal oxide. Finally, it is emphasized that the noncontact LM‐PC technique can be a powerful tool to characterize the defects in dielectric films on silicon wafers.
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71.55.Ht Other nonmetals
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Large diffusion length enhancement in silicon by rapid thermal codiffusion of phosphorus and aluminum

B. Hartiti, A. Slaoui, J. C. Muller, and P. Siffert

Appl. Phys. Lett. 63, 1249 (1993); http://dx.doi.org/10.1063/1.109786 (3 pages) | Cited 19 times

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We have investigated the effects of simultaneous diffusion of phosphorus and aluminum in crystalline silicon on the minority carrier diffusion length as measured by the surface photovoltage technique. The diffusion is carried out by using a tungsten halogen lamp furnace (rapid thermal processing). We have shown that more than 100% bulk diffusion length improvement can be achieved in both float zone and Czochralski silicon material. The different contributions to this enhancement are discussed.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.80.Cw Elemental semiconductors
61.72.Cc Kinetics of defect formation and annealing
61.72.Yx Interaction between different crystal defects; gettering effect

Low temperature (313 °C) silicon epitaxial growth by plasma‐enhanced chemical vapor deposition with stainless steel mesh

Ming‐Deng Shieh, Chiapyng Lee, Cheng‐Hsien Chen, Tri‐Rung Yew, and Chung‐Yuan Kung

Appl. Phys. Lett. 63, 1252 (1993); http://dx.doi.org/10.1063/1.109787 (3 pages) | Cited 6 times

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This letter presents the low temperature silicon epitaxial growth on p‐type, 〈100〉 Si wafers by plasma‐enhanced chemical vapor deposition with a stainless steel mesh. Following a modified ex situ spin‐etch cleaning and an in situ H2 baking step, the epitaxial layer was grown at 313 °C using SiH4 (30 sccm)/H2 (22 sccm) with a pressure of 61 mTorr and a rf power of 10 W. Epitaxial layers were also grown at 323 °C with different silane flow rates. The epitaxial film contains higher defect density when the silane flow rate is low.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Phase formation and stability in the Pd/GaP system

S. E. Mohney, C. F. Lin, and Y. A. Chang

Appl. Phys. Lett. 63, 1255 (1993); http://dx.doi.org/10.1063/1.109788 (3 pages) | Cited 6 times

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Phase formation in the Pd/GaP system is examined by transmission electron microscopy, Auger depth profiling, and x‐ray diffraction of Pd films on (100) GaP, and by x‐ray diffraction of bulk phase equilibria samples. The reaction of Pd films with GaP is initiated with the formation of an oriented hexagonal ternary phase, Pd2(GaxP1−x). Another hexagonal ternary phase, Pd12( GaxP1−x)7, forms in the intermediate stages of the reaction, and PdGa and PdP2 are found to be in thermodynamic equilibrium with GaP. The Pd/GaP system is very similar to Pd/GaAs.
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68.55.-a Thin film structure and morphology
68.35.Fx Diffusion; interface formation
73.40.Cg Contact resistance, contact potential
73.40.Ns Metal-nonmetal contacts

Characterization of arsenic doping profile across the polycrystalline Si/Si interface in polycrystalline Si emitter bipolar transistors

J. M. Macaulay, R. Hull, B. Jalali, and C. Magee

Appl. Phys. Lett. 63, 1258 (1993); http://dx.doi.org/10.1063/1.109761 (3 pages) | Cited 2 times

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The combination of Z‐contrast scanning transmission electron microscopy, transmission electron microscopy, and secondary ion mass spectroscopy allows the most accurate determination, to date, of the As doping profile across the polycrystalline Si/Si interface of an npn polycrystalline Si emitter bipolar transistor. We measure a peak in the As doping profile which is coincident with the polycrystalline Si/Si crystallographic interface and is approximately 40 Å full width at half‐maximum. There is a uniform As dopant level in the polycrystalline Si emitter of 2×1020 cm−3 and an estimated maximum As concentration of 5×1020 cm−3 in the peak at the interface.
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61.72.uf Ge and Si
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
85.30.Pq Bipolar transistors
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)

Anisotropic excitation spectra of GaAs/AlGaAs quantum wells grown on vicinal plane substrates

D. J. Wentink, P. Dawson, and C. T. Foxon

Appl. Phys. Lett. 63, 1261 (1993); http://dx.doi.org/10.1063/1.109762 (3 pages) | Cited 2 times

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We report measurements of the photoluminescence excitation spectra of a series of GaAs/AlGaAs quantum well samples grown on vicinal plane substrates with differing off‐cut angles. When the plane of polarization of the exciting light is changed we have observed a clear variation in the ratio of the strength of the n=1 light and heavy hole exciton transitions in samples grown on vicinal plane substrates. This behavior is attributed to anisotropic scattering at steps in the heterointerface.
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68.55.-a Thin film structure and morphology
78.55.Cr III-V semiconductors

Influence of wettability on anodic bias induced electroluminescence in porous silicon

A. Halimaoui

Appl. Phys. Lett. 63, 1264 (1993); http://dx.doi.org/10.1063/1.109752 (3 pages) | Cited 19 times

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Anodic oxidation in hydrochloric (HCl) acid and chemical dissolution in hydrofluoric (HF) acid solutions of porous silicon (PS) layers obtained from lightly doped p‐type substrates have been investigated. It is shown that the wettability of PS, which is a highly hydrophobic and organophilic material, strongly affects its electroluminescence (EL) during anodic oxidation and its chemical etch rate in HF solutions. When the solutions do not penetrate the pores, a very weak EL intensity is obtained and the chemical etch rate in HF is found to be very slow. However, when the solutions infiltrate the pores, both the EL intensity and chemical etch rate are dramatically increased. In the first case, only the top surface of the porous layer is accessible to the liquids while in the second case the whole volume of the material and its vast inner surface are involved.
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78.55.Hx Other solid inorganic materials
81.65.-b Surface treatments
78.60.Fi Electroluminescence

The process limitation for forming Ti silicided shallow junction by BF2+ implantation into thin polycrystalline Si films and subsequent Ti silicidation

M. H. Juang, C. T. Lin, S. T. Jan, and H. C. Cheng

Appl. Phys. Lett. 63, 1267 (1993); http://dx.doi.org/10.1063/1.109753 (3 pages) | Cited 4 times

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Excellent shallow p+n junctions have been formed by implanting BF2+ ions into thin polycrystalline Si films and subsequent annealing; these junctions which show a leakage of 1 nA/cm2 and a junction depth of about 0.05 μm. An anomalous boron diffusion occurs when subsequent silicidation is carried out. Silicidation using 300‐Å Ti just slightly affected the junction profile. However, the junction is considerably deepened for 600‐Å Ti silicidation, yielding a resulting depth of about 0.11 μm. The large boron redistribution is attributed to the point defects induced by silicidation. Hence, proper silicide thickness should be chosen to retain the junction profile as well as to reduce the parasitic source/drain resistance.
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85.40.Hp Lithography, masks and pattern transfer
66.30.J- Diffusion of impurities
61.72.uf Ge and Si

Investigation of the growth of gallium arsenide thin films by metalorganic molecular beam epitaxy using gallane‐quinuclidine adduct

J. S. Foord, T. J. Whitaker, E. N. Downing, D. O’Hare, and A. C. Jones

Appl. Phys. Lett. 63, 1270 (1993); http://dx.doi.org/10.1063/1.109754 (3 pages) | Cited 1 time

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The use of gallane‐quinuclidine adduct (GaH3[N(CH2CH2)3CH] ) as a chemical precursor in metal organic molecular beam epitaxy (MOMBE) and chemical beam epitaxy (CBE) has been investigated. The compound displays a long‐term stability and can be readily admitted as a molecular beam into the growth chamber without significant decomposition. The surface decomposition pathway of the precursor on the growth surface is similar to that of the highly successful alane adduct precursors already in widespread use. Efficient MOMBE growth of GaAs is observed at much lower temperatures than is the case when conventional Ga alkyl precursors are employed. These results show that gallane adducts may have the potential to act as practical low carbon precursors in CBE and MOMBE.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.15.Kk Vapor phase epitaxy; growth from vapor phase
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Atomic‐scale view of AlGaAs/GaAs heterostructures with cross‐sectional scanning tunneling microscopy

M. B. Johnson, U. Maier, H.‐P. Meier, and H. W. M. Salemink

Appl. Phys. Lett. 63, 1273 (1993); http://dx.doi.org/10.1063/1.109755 (3 pages) | Cited 39 times

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Atomically resolved cross‐sectional scanning tunneling microscope topographic images of heterostructures that include a sequence of 1, 2, 5, and 10 nm AlGaAs and GaAs layers are presented. These layers clearly show alloy fluctuations and interface roughness on an atomic scale. In the thick AlGaAs layers a mottled structure with regions of higher Al content about 2 nm wide and elongated in [112] or [112] directions are observed. Similarly, the interfaces are rough on a 2 nm length scale. These results suggest that, for the conditions used for the epitaxial growth of the ternary layers, Al‐rich regions nucleate and grow anisotropically.
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68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
68.55.-a Thin film structure and morphology

New high‐temperature superconducting phase spread alloy thin films

D. Lederman, T. J. Moran, J. Hasen, and Ivan K. Schuller

Appl. Phys. Lett. 63, 1276 (1993); http://dx.doi.org/10.1063/1.109756 (3 pages) | Cited 4 times

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We have prepared Gd1−xPrxBa2Cu3O7−δ phase spread alloy thin films with well‐defined variations in the concentration of Pr across a single substrate. Their Pr concentrations were independently determined from electrical resistivity and Auger electron spectroscopy measurements. The results from both methods are in good agreement with each other. Using this technique several high‐temperature superconducting thin‐film alloys may be grown under virtually identical conditions. As an example of an important application of this technique, we measured the changes in the films’ resistivities and critical temperatures (Tc) induced by decreasing their oxygen concentration. The observed shifts in Tc of the oxygen‐deficient samples appear to be slightly dependent on their Pr concentrations.
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74.72.-h Cuprate superconductors
74.78.-w Superconducting films and low-dimensional structures
74.62.Dh Effects of crystal defects, doping and substitution
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Enhanced giant magnetoresistance in Fe/Cr multilayer films by Cr alloying of the Fe layers

L. H. Chen, T. H. Tiefel, S. Jin, R. B. Van Dover, E. M. Gyorgy, and R. M. Fleming

Appl. Phys. Lett. 63, 1279 (1993); http://dx.doi.org/10.1063/1.109757 (3 pages) | Cited 15 times

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The effect of the Cr alloying addition to the Fe layers in the Fe/Cr superlattice films [Fe(15 Å)/Cr(tÅ)]30), (t=8–20) on the magnetoresistance behavior has been investigated. The alloyed superlattice films exhibited significantly improved giant magnetoresistance effect (ΔR/R∼12.2% at 4.2 K) as compared to the unalloyed Fe/Cr multilayer films (ΔR/R∼6.9%). Both films exhibit ΔR/R dependence on the thickness of the Cr layer with the maximum ΔR/R occurring at ∼10 Å thickness. The M‐H loops indicate that antiferromagnetic coupling exists in both films, which is believed to be responsible for the observed giant magnetoresistance. The improvement in ΔR/R in the Cr‐alloyed superlattice films is attributed to the stronger spin‐dependent scattering of conduction electrons.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.70.-i Magnetic properties of thin films, surfaces, and interfaces
72.15.Gd Galvanomagnetic and other magnetotransport effects

Demonstration of Y1Ba2Cu3O7−δ and complementary metal‐oxide‐semiconductor device fabrication on the same sapphire substrate

M. J. Burns, P. R. de la Houssaye, S. D. Russell, G. A. Garcia, S. R. Clayton, W. S. Ruby, and L. P. Lee

Appl. Phys. Lett. 63, 1282 (1993); http://dx.doi.org/10.1063/1.109758 (3 pages) | Cited 8 times

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We report the first fabrication of active semiconductor and high‐temperature superconducting devices on the same substrate. Test structures of complementary metal‐oxide‐semiconductor transistors were fabricated on the same sapphire substrate as test structures of Y1Ba2Cu3O7−δ flux‐flow transistors, and separately, Y1Ba2Cu3O7−δ superconducting quantum interference devices utilizing both biepitaxial and step‐edge Josephson junctions. Both semiconductor and superconductor devices were operated at 77 K. The cofabrication of devices using these disparate yet complementary electronic technologies on the same substrate opens the door for the fabrication of true semiconductive/superconductive hybrid integrated circuits capable of exploiting the best features of each of these technologies.
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85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
85.25.Qc Superconducting surface acoustic wave devices and other superconducting devices
74.72.-h Cuprate superconductors

Ferroelectricity in a Langmuir–Blodgett multilayer film of a liquid crystalline side‐chain polymer

S. Pfeiffer, R. Shashidhar, T. L. Fare, J. Naciri, J. Adams, and R. S. Duran

Appl. Phys. Lett. 63, 1285 (1993); http://dx.doi.org/10.1063/1.109759 (3 pages) | Cited 7 times

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The observation of ferroelectric behavior in a Langmuir–Blodgett (LB) film of a liquid crystalline polymer is reported. It is established that a 30‐layer film exhibits spontaneous polarization and electro‐optic switching. The magnitude of the polarization of the LB film is found to be similar to that of the bulk material. The polarization current in the LB film follows the applied triangular wave field to higher frequencies as compared to the same material in a surface stabilized (sandwich) cell.
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68.18.-g Langmuir-Blodgett films on liquids
77.80.-e Ferroelectricity and antiferroelectricity
61.30.-v Liquid crystals

Tip‐induced anodization of titanium surfaces by scanning tunneling microscopy: A humidity effect on nanolithography

Hiroyuki Sugimura, Tatsuya Uchida, Noboru Kitamura, and Hiroshi Masuhara

Appl. Phys. Lett. 63, 1288 (1993); http://dx.doi.org/10.1063/1.110771 (3 pages) | Cited 57 times

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A scanning tunneling microscope was employed for tip‐induced anodization of titanium (Ti) surfaces. Spatial resolution of fabricated patterns was remarkably affected by the tip shape and humidity in the atmosphere. The amount of adsorbed water on the Ti surface determined by humidity has a key role in controlling the resolution, and the resolution becomes worse with increasing humidity. Under the optimized conditions, tip‐induced anodization of Ti was successfully achieved with a spatial resolution of 30 nm.
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81.05.Bx Metals, semimetals, and alloys
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
FREE

Erratum: ‘‘Microwave measurement of the dielectric constant of Sr0.5Ba0.5TiO3 ferroelectric thin films’’ [Appl. Phys. Lett. 62, 1845 (1993)]

K. R. Carroll, J. M. Pond, D. B. Chrisey, J. S. Horwitz, R. E. Leuchtner, and K. S. Grabowski

Appl. Phys. Lett. 63, 1291 (1993); http://dx.doi.org/10.1063/1.110810 (1 page) | Cited 1 time

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Abstract Unavailable
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77.80.-e Ferroelectricity and antiferroelectricity
77.55.-g Dielectric thin films
84.40.-x Radiowave and microwave (including millimeter wave) technology
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
99.10.Cd Errata
FREE

Erratum: ‘‘Group‐velocity‐matched second‐harmonic generation: An efficient scheme for femtosecond ultraviolet pulse generation in periodically domain‐inverted β‐BaB2O4’’ [Appl. Phys. Lett. 62, 2188 (1993)]

K. Hayata and M. Koshiba

Appl. Phys. Lett. 63, 1292 (1993); http://dx.doi.org/10.1063/1.110811 (1 page) | Cited 1 time

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Abstract Unavailable
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.72.Bj Visible and ultraviolet sources
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
99.10.Cd Errata
FREE

Erratum: ‘‘Dependence of the optical properties of semiconductor alloys on the degree of long‐range order’’ [Appl. Phys. Lett. 62, 1937 (1993)]

Su‐Huai Wei, David B. Laks, and Alex Zunger

Appl. Phys. Lett. 63, 1292 (1993); http://dx.doi.org/10.1063/1.110812 (1 page) | Cited 1 time

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Abstract Unavailable
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.55.-a Thin film structure and morphology
78.66.Fd III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
99.10.Cd Errata
FREE

Addendum: ‘‘Electroabsorption in InGaAsP: Electro‐optical modulators and bistable optical switches [Appl. Phys. Lett. 62, 2072 (1993)]

B. Knüpfer, P. Kiesel, A. Höfler, P. Riel, G. H. Döhler, and E. Veuhoff

Appl. Phys. Lett. 63, 1293 (1993); http://dx.doi.org/10.1063/1.109760 (1 page)

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Abstract Unavailable
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Hp Optical processors, correlators, and modulators
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
78.66.Fd III-V semiconductors
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