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14 Mar 1994

Volume 64, Issue 11, pp. 1315-1455

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Improved performance of large‐area InP/InGaAs metal‐semiconductor‐metal photodetectors by sulfur passivation

U. Schade, St. Kollakowski, E. H. Böttcher, and D. Bimberg

Appl. Phys. Lett. 64, 1389 (1994); http://dx.doi.org/10.1063/1.111916 (3 pages) | Cited 17 times

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We report on sulfur based surface passivation technique for InGaAs metal‐semiconductor‐metal (MSM) photodetectors with an InP barrier enhancement layer. We show that excessive leakage current and photocurrent gain, which are the two major performance‐limiting factors in MSM detectors, can be largely suppressed by a treatment of the InP surface with ammonium polysulfide. The dark current and photocurrent characteristics of such passivated devices were monitored over a period of half a year and were found to be stable. The improved performance of the device characteristics is explained in terms of a passivation‐induced reduction of surface charging effects.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
81.65.-b Surface treatments
73.40.Sx Metal-semiconductor-metal structures
72.40.+w Photoconduction and photovoltaic effects

Effects of disturbing pulses on the switchable polarization of Pb(ZrTi)O3 thin film capacitors

D. J. Taylor, P. K. Larsen, and R. Cuppens

Appl. Phys. Lett. 64, 1392 (1994); http://dx.doi.org/10.1063/1.111893 (3 pages) | Cited 12 times

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The effect of disturbing pulses on the switchable polarization in ferroelectric films of PbZrxTi1−xO3 with x=0.36 and 0.71 has been investigated. The two compositions were selected because of their different hysteresis shapes. Pulse measurements were carried out with a varying number of disturbing pulses at different amplitudes, interrupted by single shot read/write pulses. It was found that the composition with the squarer loop (x=0.36) showed less sensitivity to disturbing pulses, i.e., the switchable polarization did not significantly degrade with 109 disturbing pulses of amplitude 1.2 V. In addition, these results demonstrate that degradation of the stored polarization due to parasitic disturbing voltages in high density ferroelectric random access memories can be kept at an acceptable level.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
77.80.-e Ferroelectricity and antiferroelectricity
85.30.Tv Field effect devices

Germanium‐ and silicon‐doped indium‐oxide thin films prepared by radio‐frequency magnetron sputtering

Toshiro Maruyama and Teruoki Tago

Appl. Phys. Lett. 64, 1395 (1994); http://dx.doi.org/10.1063/1.111894 (3 pages) | Cited 7 times

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Indium oxide (In2O3) thin films doped with either germanium or silicon were prepared by using a radio‐frequency magnetron sputtering method. The target was the In2O3 powder mixed with either Ge or Si powder. The resistivities of the films were compared with that of the film doped with tin (ITO). The Ge and Si dopings yielded lower carrier concentrations and higher Hall mobilities compared to those for Sn doping, and they gave different dependencies of resistivity on atomic ratio. The minimum resistivity of the films doped with Ge was nearly equal to that of ITO.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Cd Deposition by sputtering
73.61.Ng Insulators

Crystal growth and electronic properties of ultrahigh vacuum ion‐beam sputter deposited Sb‐doped Si(001)2×1

N.‐E. Lee, G. A. Tomasch, G. Xue, L. C. Markert, and J. E. Greene

Appl. Phys. Lett. 64, 1398 (1994); http://dx.doi.org/10.1063/1.111895 (3 pages) | Cited 10 times

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High‐quality homoepitaxial Sb‐doped Si(001)2×1 films have been grown on p‐type Si(001) substrates by ultrahigh vacuum ion‐beam sputter deposition (IBSD) at temperatures Ts between 450 and 750 °C. The load‐locked multichamber system is equipped with in situ reflection high‐energy electron diffraction. Sputter deposition was carried out using a 1 keV Kr+ ion beam generated by a modified Kaufman‐type ion source with post‐extraction electrostatic ion optics. All films were 1 μm thick and deposited at a rate of 0.35 μm h−1. Results of plan‐view, cross‐sectional, and convergent‐beam transmission electron microscopy analyses showed that as‐deposited films are highly perfect with no visible defects. Sb incorporation probabilities σSb ranged from ≂0.1 at Ts=750 °C to ≂1 for Ts≤550 °C with no indication by secondary‐ion mass spectrometry (SIMS) of Sb surface segregation. These σSb values are one to three orders of magnitude larger than for coevaporative Sb doping during molecular beam epitaxy where extensive Sb surface segregation is observed. A comparison of calibrated SIMS and Hall‐effect measurements established that the incorporated Sb exhibited complete electrical activity. SIMS analyses also showed no detectable Kr (detection limit ≂5×1017 cm−3). Temperature‐dependent (15–300 K) electron mobilities were equal to the best reported bulk Si values.  
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81.15.Cd Deposition by sputtering
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Optical and electrical degradations of GaAs‐based laser diodes grown on Si substrates

T. Egawa, T. Jimbo, Y. Hasegawa, and M. Umeno

Appl. Phys. Lett. 64, 1401 (1994); http://dx.doi.org/10.1063/1.111896 (3 pages) | Cited 6 times

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A GaAs‐based laser diode grown on a Si‐substrate suffers from degradation, which results from the deterioration of electrical and optical characteristics. An initial deterioration of a p‐n junction is observed in a reverse current‐voltage (I‐V) characteristic, and becomes ohmic‐like under a higher ambient temperature and a larger forward current. Electroluminescence observation shows that the optical deterioration is caused by the growth of dark spot regions, which act as nonradiative recombination regions. The deterioration of the I‐V characteristic is probably due to defect‐accelerated impurity diffusion because the growth of GaAs/Si involves a high dislocation density, a large tensile stress and a large amount of Si near the GaAs/Si interface.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Secondary electron emission from Si‐implanted GaAs

F. Iwase, Y. Nakamura, and S. Furuya

Appl. Phys. Lett. 64, 1404 (1994); http://dx.doi.org/10.1063/1.111897 (3 pages) | Cited 4 times

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The effect of the implanted Si into GaAs on the secondary electron yield was investigated using cross‐sectional scanning electron microscopy. In the case of the isothermal annealing at 800 °C for 30 min, the yield was enhanced for the samples implanted at 150 keV with higher doses than 1×1014 cm−2 above which the activation efficiency of the implanted Si went down rapidly. The annealing temperature dependence also showed the enhancement of the yield for the samples with less activation efficiency. Hence, it was suggested that the yield was increased by the defects that reduced the activation efficiency.
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68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
61.72.uj III-V and II-VI semiconductors
79.20.Hx Electron impact: secondary emission

Optical and electrical properties of titanium dioxide films with a high magnitude dielectric constant grown on p‐Si by metalorganic chemical vapor deposition at low temperature

T. W. Kim, M. Jung, H. J. Kim, T. H. Park, Y. S. Yoon, W. N. Kang, S. S. Yom, and H. K. Na

Appl. Phys. Lett. 64, 1407 (1994); http://dx.doi.org/10.1063/1.111898 (3 pages) | Cited 23 times

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Metalorganic chemical vapor deposition of titanium dioxide (TiO2) on p‐Si(100) using titanium isopropoxide and nitrous oxide via pyrolysis at relatively low (∼500 °C) temperature was performed to produce high quality TiO2/p‐Si interfaces and to fabricate TiO2 insulator gates with a dielectric constant of high magnitude. Scanning electron microscopy shows that the surfaces of the TiO2 films have very smooth morphologies. From the x‐ray diffraction analysis, the grown layer was found to be a polycrystalline film. Raman spectroscopy showed the optical phonon modes of a TiO2 thin film. The stoichiometry of the TiO2 film was investigated by Auger electron spectroscopy. Room‐temperature current‐voltage and capacitance‐voltage measurements clearly revealed metal‐insulator‐semiconductor behavior for the samples of the Ag/TiO2/p‐Si. The interface state density at the TiO2/p‐Si interface was approximately high 1011 eV−1 cm−2 at the middle of the Si energy gap, and the dielectric constant determined from the capacitance‐voltage measurements was as large as 73. These results indicate the TiO2 layers grown at relatively low temperature can be used for high density dynamic memory.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Formation of cylindrical n/p junction diodes by arsenic enhanced diffusion along interfacial misfit dislocations in p‐type epitaxial Si/Si(Ge)

N. Braga, A. Buczkowski, H. R. Kirk, and G. A. Rozgonyi

Appl. Phys. Lett. 64, 1410 (1994); http://dx.doi.org/10.1063/1.111899 (3 pages) | Cited 5 times

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Arsenic enhanced diffusion along individual misfit dislocations in Si/Si(Ge) heterostructures has been detected and imaged using scanning electron microscopy (SEM) and in the electron beam induced current (EBIC) mode. The formation of buried cylindrical, or conical, diodes surrounding misfit dislocations has been observed. The diffusion enhancement is not uniform for each dislocation. EBIC/SEM micrographs reveal a dark recombination contrast in the vicinity of the dislocation core and a white generation signal within the space‐charge region of the surrounding n/p diode. Based on an experimental isoconcentration etching profile and a simple model for enhanced diffusion, the dislocation diffusion coefficient for arsenic is estimated to be up to six orders of magnitude higher than that in the host crystal.
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66.30.J- Diffusion of impurities
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

High Schottky barrier height of the Al/n‐GaAs diodes achieved by sputter deposition

C.‐P. Chen, Y. A. Chang, J.‐W. Huang, and T. F. Kuech

Appl. Phys. Lett. 64, 1413 (1994); http://dx.doi.org/10.1063/1.111900 (3 pages) | Cited 6 times

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Thermally stable Al/n‐GaAs Schottky contacts, up to annealing temperature at 500 °C for 20 s, have been realized by sputter deposition. The Schottky barrier height was 0.75 eV (0.9 eV) when using the current‐voltage (I‐V) [capacitance‐voltage (C‐V)] method with an ideality factor of 1.09 for the as‐deposited samples. The Schottky barrier height increased to 0.97 eV (1.06 eV) with an ideality factor of 1.07 after annealing at 400 °C for 20 s. The discrepancy between I‐V and C‐V measurements was attributed to deep levels existing in the GaAs substrate. A (200) dark‐field cross‐section transmission electron microscopy image of the contact after annealing at 600 °C showed that the (Ga,Al)As phase formed at the interface and the enhancement of the Schottky barrier height was due to the formation of this phase.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Cg Contact resistance, contact potential
73.40.Ns Metal-nonmetal contacts
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Comparison of transport, recombination, and interfacial quality in molecular beam epitaxy and organometallic vapor‐phase epitaxy GaAs/AlxGa1−xAs structures

D. J. Wolford, G. D. Gilliland, T. F. Kuech, J. F. Klem, H. P. Hjalmarson, J. A. Bradley, C. F. Tsang, and J. Martinsen

Appl. Phys. Lett. 64, 1416 (1994); http://dx.doi.org/10.1063/1.111901 (3 pages) | Cited 4 times

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We have studied free‐carrier recombination and transport in GaAs structures prepared by different epitaxial growth techniques and with different ‘‘surface barriers’’ including molecular beam epitaxy (MBE) and organometallic vapor‐phase epitaxy (OMVPE) prepared undoped, symmetric GaAs/Al0.3Ga0.7As double heterostructures and these same structures after etch removing the top Al0.3Ga0.7As layer and repassivating with Na2S. We find 300‐K lifetimes of ≥2.5 μs (350 ns), and interface recombination velocities of 40 cm/s (250 cm/s) for our OMVPE (MBE) structures. Identical measurements for Na2S and bare surfaces yield interface recombination velocities of 5500 cm/s and 34 000 cm/s, respectively. Free‐carrier transport in both types of structures is diffusive with hole mobilities of ∼350 cm2/V s.
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics
73.20.At Surface states, band structure, electron density of states

Selective‐area room temperature visible photoluminescence from SiC/Si heterostructures

A. J. Steckl, J. N. Su, J. Xu, J. P. Li, C. Yuan, P. H. Yih, and H. C. Mogul

Appl. Phys. Lett. 64, 1419 (1994); http://dx.doi.org/10.1063/1.111902 (2 pages) | Cited 8 times

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SiC/Si heterostructures have been patterned by reactive ion etching with CHF3/O2 to produce SiC‐covered and Si‐exposed regions with lateral dimensions of 2.5 to ∼500 μm. The patterned samples were then anodized in HF/ethanol solutions. Short anodization times (<3 min) result in selective‐area UV‐induced visible photoluminescence (PL), with a peak located at 650 nm, being observed at 25 °C from only the SiC‐covered regions. The emission is generated by porous Si (PoSi) selectively formed under the SiC cap and transmitted through the wide band‐gap SiC layer. Longer etching times result in nonselective PL.
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78.55.Hx Other solid inorganic materials
85.60.Jb Light-emitting devices
81.65.-b Surface treatments

Optical spectroscopy of a GaAs/AlGaAs quantum wire structure using near‐field scanning optical microscopy

Robert D. Grober, Timothy D. Harris, Jay K. Trautman, Eric Betzig, Werner Wegscheider, Loren Pfeiffer, and Ken West

Appl. Phys. Lett. 64, 1421 (1994); http://dx.doi.org/10.1063/1.111903 (3 pages) | Cited 96 times

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We report the first spectroscopic study using a low temperature near‐field scanning optical microscope. We have studied an array of GaAs/AlGaAs cleaved edge overgrowth quantum wires. The three luminescence peaks originate from different structures in the sample: The (001)‐oriented multiple quantum wells, the (110)‐oriented single quantum well, and the quantum wires. The linewidth of the quantum wire emission is related to roughness in the (110)‐oriented single quantum well. Quenching of the multiple quantum wells and single quantum well emission near the quantum wires is attributed to diffusion of photoexcited carriers into the wires.
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78.55.Cr III-V semiconductors
07.60.Rd Visible and ultraviolet spectrometers
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Demonstration of Josephson effect submillimeter wave sources with increased power

Siyuan Han, Baokang Bi, Wenxing Zhang, and J. E. Lukens

Appl. Phys. Lett. 64, 1424 (1994); http://dx.doi.org/10.1063/1.111904 (3 pages) | Cited 47 times

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A submillimeter wave source based on a new design using Josephson junction arrays has been developed and tested. The maximum rf power, delivered to a 68Ω load and detected on chip, was 47 μW at 394 GHz. Significant power was detected at a number of frequencies from 300 to 500 GHz where the power was 10 μW. The observed power at the designed operating frequency near 400 GHz is consistent with all 500 junctions in the series biased array delivering current in phase to the loads. This is in agreement with simulations of smaller arrays of the same design. The linewidth, inferred from the measured resistance at the point of maximum power, with T=4.2 K, is less than 1 MHz. The minimum inferred linewidth near 400 GHz, at somewhat lower power, is about 100 kHz.
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85.25.Cp Josephson devices
84.40.Dc Microwave circuits

Micro‐Raman spectroscopy of electromigration‐induced oxygen vacancy aggregation in YBa2Cu3O7−δ

B. H. Moeckly, R. A. Buhrman, and P. E. Sulewski

Appl. Phys. Lett. 64, 1427 (1994); http://dx.doi.org/10.1063/1.111905 (3 pages) | Cited 16 times

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We describe the results of micro‐Raman spectroscopy and optical microscopy studies of basal‐plane chain‐oxygen vacancy motion in YBa2Cu3O7−δ thin films under the influence of a high current bias near 300 K. Above a threshold level this bias causes vacancy aggregation and then long‐range displacement, leading to an enhancement of oxygen order in the region of highest current density and the complex accumulation of oxygen vacancies in the region where the electromigration force is near the threshold level.
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74.72.-h Cuprate superconductors
66.30.Qa Electromigration
78.30.Hv Other nonmetallic inorganics

Extended x‐ray absorption fine structure investigation on buried InAsP/InP interfaces

C. Lamberti, S. Bordiga, F. Boscherini, S. Pascarelli, and G. M. Schiavini

Appl. Phys. Lett. 64, 1430 (1994); http://dx.doi.org/10.1063/1.111906 (3 pages) | Cited 22 times

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As K‐edge extended x‐ray absorption fine structure has been carried out on the 2–3 monolayers thick interface of ad hoc grown InAsP/InP expitaxial multistructures deposited by low pressure metalorganic vapor phase epitaxy. The goal was to characterize the local structure of the unwanted, strained interface layers of InAsP produced by the exposure of the InP surface to AsH3 as occurs during the growth of InP/InGaAs heterostructures. We observed that the first shell environment of As at these interfaces is identical to that found in bulk InAs. In particular, we measure a constant As—In bond length, independently of As concentration at the interface; this implies that epitaxy with InP is accompanied by local structural distortions which accommodate the constant As—In bond length.
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68.55.-a Thin film structure and morphology

YBa2Cu3O7−δ films grown on ferroelectric Bi4Ti3O12 crystals by radio‐frequency sputtering

M. E. Mendoza‐Alvarez, C. Tabares‐Muñoz, O. Alvarez‐Fregoso, and J. G. Mendoza‐Alvarez

Appl. Phys. Lett. 64, 1433 (1994); http://dx.doi.org/10.1063/1.111907 (3 pages) | Cited 3 times

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We describe the growth and structural characterization of YBa2Cu3O7−δ (YBCO) thin films on Bi4Ti3O12 (BTO) layered crystals using a radio frequency sputtering technique. A nonhomogeneous laminar morphology probably related with ferroelectric domain walls was obtained. An electron diffraction pattern of a selected area shows evidence of epitaxial growth even when there exists a large mismatch between BTO and YBCO; we explain such a matching in terms of a 45° rotation between lattices.  
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74.78.-w Superconducting films and low-dimensional structures
81.15.Cd Deposition by sputtering
68.55.-a Thin film structure and morphology
74.72.-h Cuprate superconductors

Generation of dense, pulsed beams of refractory metal atoms using two‐stage laser ablation

Michael A. Kadar‐Kallen and Keith D. Bonin

Appl. Phys. Lett. 64, 1436 (1994); http://dx.doi.org/10.1063/1.111908 (3 pages) | Cited 5 times

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We report a technique for generating a dense, pulsed beam of refractory metal atoms using two‐stage laser ablation. An atomic beam of uranium was produced with a peak, ground‐state number density of 1×1012 cm−3 at a distance of z=27 cm from the source. This density can be scaled as 1/z3 to estimate the density at other distances which are also far from the source.
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79.20.Ds Laser-beam impact phenomena
07.77.-n Atomic, molecular, and charged-particle sources and detectors
81.15.Fg Pulsed laser ablation deposition

Experimental realization of millimeter‐wave amplification by a sheet beam free electron laser

Ze‐Xiang Zhang, W. W. Destler, V. L. Granatstein, T. M. Antonsen, B. Levush, J. Rodgers, and S. Cheng

Appl. Phys. Lett. 64, 1439 (1994); http://dx.doi.org/10.1063/1.111909 (3 pages) | Cited 3 times

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We report an observation of millimeter‐wave (94 GHz) amplification in a sheet beam, short period, planar wiggler, free electron laser amplifier. The observed gain is about 5 dB for a 530 keV, 4 A beam through a 54 cm wiggler. Wave energy absorption was also observed when the beam energy is off‐resonance. Experimental results are in good agreement with numerical simulation. This amplifier configuration has potential for producing equally high output power but at relatively low voltage compared with longer period free electron lasers.
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41.60.Cr Free-electron lasers
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
52.50.Gj Plasma heating by particle beams

Scanned electrostatic force microscope for noninvasive high frequency potential measurement

Ra’a A. Said, Greg E. Bridges, and Doug J. Thomson

Appl. Phys. Lett. 64, 1442 (1994); http://dx.doi.org/10.1063/1.111910 (3 pages) | Cited 9 times

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This letter presents a technique for performing localized noncontact measurements of high frequency signals on integrated circuits using a scanned force microscope. The technique extracts the amplitude and phase of the signal voltage at a point on the circuit by nulling the electrostatic force interaction between a small driven probe and the test point. A heterodyne approach is used to enable the measurement of high frequency signals, including frequencies which are much greater than the mechanical resonance of the probe mechanism. Accurate measurements can be performed without complex calibration requirements and are not sensitive to dc offset effects.
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85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
07.50.-e Electrical and electronic instruments and components
07.50.Ek Circuits and circuit components

Thin SiC films prepared by pyrolysis of polyimide Langmuir–Blodgett films on silicon

Beifang Yang, Yue Zhou, Weili Cai, Pingsheng He, Yaozhong Ruan, Yunlan Huang, Xianming Liu, and Guien Zhou

Appl. Phys. Lett. 64, 1445 (1994); http://dx.doi.org/10.1063/1.111911 (3 pages) | Cited 9 times

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The quasi‐single‐crystal SiC thin films were grown on silicon (111) by pyrolysis of polyimide LB films at 1000 °C in vacuum. The chemical and structural characterizations were studied by x‐ray diffraction, infrared absorption, x‐ray photoelectron spectroscopy, and Laue photography.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology
68.18.-g Langmuir-Blodgett films on liquids

Ultralow‐energy focused electron beam induced deposition

P. C. Hoyle, J. R. A. Cleaver, and H. Ahmed

Appl. Phys. Lett. 64, 1448 (1994); http://dx.doi.org/10.1063/1.111912 (3 pages) | Cited 21 times

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We have studied focused electron beam induced deposition from W(CO)6 at beam primary energies between 20 and 0.06 keV. Submicrometer resolution with 4 nA beam current was maintained at very low primary energies using a retarding field configuration. Decomposition cross sections of W(CO)6 for primary energies below about 1 keV were found to be about a factor of 4 larger than those at 20 keV. Depending on the scan conditions, the resistivity of the deposits formed using low primary energies was found to be up to about a factor of 4 lower than at 20 keV implying a higher metallic content. These results form the basis of an improved method for repairing clear defects on x‐ray masks and for making conducting tracks on semiconducting materials.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
85.40.Hp Lithography, masks and pattern transfer
85.40.Ls Metallization, contacts, interconnects; device isolation
82.50.Kx Processes caused by X-rays or γ-rays

Low‐loss microwave cavity using layered‐dielectric materials

C. J. Maggiore, A. M. Clogston, G. Spalek, W. C. Sailor, and F. M. Mueller

Appl. Phys. Lett. 64, 1451 (1994); http://dx.doi.org/10.1063/1.111993 (3 pages) | Cited 14 times

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Loss measurements have been carried out on a cylindrical pillbox cavity whose metallic flat end walls have been replaced by an ordered sequence of high purity sapphire and air dielectric layers. The loss of the TE01 mode at 18.99 GHz was substantially lowered. An improvement in cavity Q for this mode from 8.30×103 to 531×103 was observed. These experimental results closely reproduce two independent theoretical simulations. All measurements were taken at 30 °C.
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84.40.Az Waveguides, transmission lines, striplines
77.22.Gm Dielectric loss and relaxation
FREE

Erratum: Direct imaging of dopants in GaAs with cross‐sectional scanning tunneling microscopy [Appl. Phys. Lett. 63, 2923 (1993)]

M. B. Johnson, O. Albrektsen, R. M. Feenstra, and H. W. Salemink

Appl. Phys. Lett. 64, 1454 (1994); http://dx.doi.org/10.1063/1.111999 (1 page) | Cited 20 times

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Abstract Unavailable
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61.72.uj III-V and II-VI semiconductors
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
99.10.Cd Errata
FREE

Erratum: ‘‘Measurement of second‐harmonic generation from colored powders’’ [Appl. Phys. Lett. 63, 2165 (1993)]

M. Kiguchi, M. Kato, and Y. Taniguchi

Appl. Phys. Lett. 64, 1455 (1994); http://dx.doi.org/10.1063/1.112000 (1 page)

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Abstract Unavailable
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
99.10.Cd Errata
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