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Applied Physics Letters / Volume 64 / Issue 14

Appl. Phys. Lett. 64, 1845 (1994); http://dx.doi.org/10.1063/1.111774 (3 pages)

Direct observation of exciton localization in a GaAs/AlGaAs quantum well

Yutaka Takahashi1, Satoru S. Kano1, Koji Muraki2, Susumu Fukatsu2, Yasuhiro Shiraki2, and Ryoichi Ito3

1IBM Research, Tokyo Research Laboratory, 1623‐14, Shimo‐tsuruma, Yamato, Kanagawa 242, Japan
2Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4‐6‐1 Komaba, Meguro‐ku, Tokyo 153, Japan
3Department of Applied Physics, The University of Tokyo, 7‐3‐1 Hongo, Tokyo 113, Japan

(Received 19 July 1993; accepted 13 January 1994)

We present the direct observation of exciton localization in a GaAs/AlGaAs quantum well. We have observed the two‐component exponential decay of photoluminescence from heavy‐hole excitons when the excitation density is very low. We have confirmed by measuring the lateral spatial motion of excitons that the fast component is attributable to the radiative recombination of free excitons while the slowly decaying component is due to the localized excitons.

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KEYWORDS and PACS

Keywords

QUANTUM WELLS, EXCITONS, LOCALIZED STATES, PHOTOLUMINESCENCE, RECOMBINATION, GALLIUM ARSENIDES, ALUMINIUM ARSENIDES, TERNARY COMPOUNDS

PACS

  • 73.21.-b

    Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

  • 78.55.Cr

    III-V semiconductors

  • 78.66.Fd

    III-V semiconductors

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.111774

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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