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4 Apr 1994

Volume 64, Issue 14, pp. 1753-1882

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Compact InP‐based ring lasers employing multimode interference couplers and combiners

R. van Roijen, E. C. M. Pennings, M. J. N. van Stalen, T. van Dongen, B. H. Verbeek, and J. M. M. van der Heijden

Appl. Phys. Lett. 64, 1753 (1994); http://dx.doi.org/10.1063/1.111797 (3 pages) | Cited 24 times

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Multimode interference (MMI) 3 dB couplers and MMI power combiners have been integrated with compact InP/InGaAsP ring lasers (R=150 μm). Radiative loss from the curves is small, and MMI 3 dB couplers are shown to be more efficient than conventional Y junctions. In addition, we demonstrate improved efficiency by combining counterpropagating beams in a single output by means of a MMI combiner. Single mode spectral behavior, with 35 dB side mode suppression, has been measured and is explained as resulting from coupled cavities.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
85.60.Jb Light-emitting devices
42.81.Qb Fiber waveguides, couplers, and arrays

Controllable narrow band and broadband second‐harmonic generation by tailored quasiphase matching with domain gratings

Baruch Fischer and Moshe Horowitz

Appl. Phys. Lett. 64, 1756 (1994); http://dx.doi.org/10.1063/1.111798 (3 pages) | Cited 6 times

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We demonstrate second‐harmonic generation for various discrete input wavelengths by a controllable quasiphase matching method. This is done by forming ferroelectric domain gratings in SrxBa1−xNb2O6 crystals. The method allows flexible preparation of tailored quasiphase matching for prespecified wavelengths over prespecified bandwidths. Conversion efficiencies of 5% were achieved.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
77.80.Dj Domain structure; hysteresis

Quantum wire microcavity laser made from GaAs fractional layer superlattices

A. Chavez‐Pirson, H. Ando, H. Saito, and H. Kanbe

Appl. Phys. Lett. 64, 1759 (1994); http://dx.doi.org/10.1063/1.111799 (3 pages) | Cited 16 times

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We report the first demonstration of lasing action in a quantum wire microcavity semiconductor laser made from an array of (AlAs)1/4(GaAs)3/4 fractional‐layer superlattice (FLS) quantum wires. The FLS growth method produces uniform, densely packed, damage‐free arrays of nanometer‐size quantum wires which are integrated into an optical microcavity that is the size of the wavelength of the light. We obtain room temperature optically pumped lasing for wavelengths from 670 to 690 nm. The lasing output is linearly polarized parallel to the quantum wires, reflecting the higher optical gain for polarization direction parallel to the wires. The combination of a semiconductor quantum wire active material with an optical microcavity offers the possibility of ultimately compact, highly efficient laser sources.
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42.55.Px Semiconductor lasers; laser diodes
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.Fd III-V semiconductors

Scaling laws for gain‐guided vertical cavity lasers with distributed Bragg reflectors

Dubravko I. Babić, Rajeev J. Ram, John E. Bowers, Michael Tan, and Long Yang

Appl. Phys. Lett. 64, 1762 (1994); http://dx.doi.org/10.1063/1.111800 (3 pages) | Cited 12 times

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General scaling laws for gain‐guided vertical cavity lasers with distributed Bragg reflectors are introduced. The validity of these laws is verified using a self‐consistent calculation of transverse modes and propagation constants for two‐dimensional laser cavities. The definition of Fresnel number is generalized to cavities with distributed mirrors. We show that all of the resonator parameters—the threshold gain, the frequency spectrum, and the transverse mode patterns scale with the ratio between the Fresnel number and the cold cavity finesse.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Continuous‐wave LiB3O5 optical parametric oscillator pumped by a tunable Ti:sapphire laser

F. G. Colville, M. Ebrahimzadeh, W. Sibbett, and M. H. Dunn

Appl. Phys. Lett. 64, 1765 (1994); http://dx.doi.org/10.1063/1.111801 (3 pages) | Cited 3 times

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We have demonstrated a continuous‐wave optical parametric oscillator that uses lithium triborate as the nonlinear material and a tunable Ti:sapphire laser as the pump source. By exploiting type I noncritical phase matching and a combination of temperature and pump frequency tuning, we have generated widely tunable radiation from 1.49 to 1.70 μm, limited by the bandwidth of the optical coatings. Total output powers of 30 mW and pump depletions of 40% have been obtained at two times the oscillation threshold of 360 mW. We discuss the application of this nonlinear frequency conversion process to several recently proposed experiments.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.79.Nv Optical frequency converters
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Raman spectroscopy using a fiber optic probe with subwavelength aperture

Din Ping Tsai, Andreas Othonos, Martin Moskovits, and Deepak Uttamchandani

Appl. Phys. Lett. 64, 1768 (1994); http://dx.doi.org/10.1063/1.111802 (3 pages) | Cited 29 times

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Raman spectroscopy with subwavelength spatial resolution of a diamond sample was recorded using a tapered fiber optical probe in conjunction with a conventional Raman spectrometer. The experiment demonstrates the potential of suboptical wavelength resolution analytical spectroscopy. The tapered fiber optical probe with an aperture of around 100 nm, served as the means for delivering pump radiation while simultaneously collecting the Stokes radiation from the diamond specimen. Comparing the magnitude of the Raman scattering measured with the submicron single mode fiber probe to similar signals obtained with a nontapered probe made of the same type of fiber, illustrates the potential increase in effective optical aperture resulting from the close approach of the fiber to the surface.
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78.30.Hv Other nonmetallic inorganics
42.79.Pw Imaging detectors and sensors
42.81.-i Fiber optics

Photoinduced Bragg reflector in As2S3 glass

K. Shiramine, H. Hisakuni, and K. Tanaka

Appl. Phys. Lett. 64, 1771 (1994); http://dx.doi.org/10.1063/1.111803 (3 pages) | Cited 9 times

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Bragg reflectors have been fabricated in As2S3 glasses through the photoinduced refractive‐index change process. Illumination of single monochromatic beams can produce Bragg reflectors with a half Bragg width of 2 nm in wavelength and the reflectivity estimated from the transmission decrease at 10%–20%. The reflectors can be erased with annealing and polychromatic illumination.
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42.70.Ce Glasses, quartz
42.79.Fm Reflectors, beam splitters, and deflectors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.66.Jg Amorphous semiconductors; glasses

Fabrication of polymer light‐emitting diodes using doped silicon electrodes

I. D. Parker and Helen H. Kim

Appl. Phys. Lett. 64, 1774 (1994); http://dx.doi.org/10.1063/1.111804 (3 pages) | Cited 52 times

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We report the fabrication of light‐emitting diodes from the semiconducting conjugated polymer poly[2‐methoxy,5‐(2′‐ethyl‐hexyloxy)‐1,4‐phenylene‐vinylene], using doped silicon (both n and p type) as an electrode material. Light emission at low voltages is clearly demonstrated. The presence of a thin SiO2 layer at the silicon interface modifies the device characteristics compared to devices fabricated on indium‐tin‐oxide substrates. An interesting consequence of this is the ability to align the Fermi level of the silicon electrode with the lowest unoccupied molecular orbital of the polymer allowing hole injection in forward bias and electron injection in reverse bias.
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85.60.Jb Light-emitting devices
73.61.Ph Polymers; organic compounds
73.40.Gk Tunneling
72.80.Le Polymers; organic compounds (including organic semiconductors)

Preparation of single‐crystal Y3Al5O12 thin film by metalorganic chemical vapor deposition

G. R. Bai, H. L. M. Chang, and C. M. Foster

Appl. Phys. Lett. 64, 1777 (1994); http://dx.doi.org/10.1063/1.111805 (3 pages) | Cited 7 times

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See Also: Erratum

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Single‐crystal yttrium aluminum garnet (Y3Al5O12 or YAG) thin films have been grown on (111) Gd3Ga5O12 substrate by metalorganic chemical vapor deposition. X‐ray diffraction, selective‐area electron diffraction, and transmission electron microscopy were used to confirm the single‐crystal nature of [111]‐oriented single‐crystal Y3Al5O12 thin films. We determined that the epitaxial relationship between the film and the substrate is (111)[110]Y3Al5O12//(111)[110]Gd3Ga5O12.
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42.70.Hj Laser materials
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
42.55.Rz Doped-insulator lasers and other solid state lasers

Frequency effects in capacitively coupled radio‐frequency glow discharges: A comparison between experiments and a two‐dimensional fluid model

P. M. Meijer, J. D. P. Passchier, W. J. Goedheer, J. Bezemer, and W. G. J. H. M. van Sark

Appl. Phys. Lett. 64, 1780 (1994); http://dx.doi.org/10.1063/1.111806 (3 pages) | Cited 2 times

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The results of a two‐dimensional fluid model for argon rf discharges in a closed cylindrical vacuum chamber are compared with experimental data from an amorphous silicon deposition reactor. Good agreement is obtained for the relation between the dc autobias voltage and the dissipated power in the frequency range 50–100 MHz at pressures between 12 and 90 Pa. A scaling law is presented for the relation between the power, the dc bias voltage, the rf excitation frequency, and the background pressure. The model yields a linear relation between the applied rf voltage and the dc bias voltage. This relation depends only on the geometry of the discharge chamber and shows an offset.
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52.80.Hc Glow; corona
52.80.Pi High-frequency and RF discharges
52.65.-y Plasma simulation
52.75.-d Plasma devices

Two‐dimensional model of ion dynamics during plasma source ion implantation

T. E. Sheridan and M. J. Alport

Appl. Phys. Lett. 64, 1783 (1994); http://dx.doi.org/10.1063/1.111807 (3 pages) | Cited 32 times

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Ion dynamics in the plasma sheath following the application of a negative voltage pulse to a two‐dimensional target are modeled using a time‐dependent, two‐fluid simulation. The target considered is a square bar of infinite length. We find that the sheath focuses ions near to, but not on, the corner of the bar, resulting in an enhancement of the dose received there.
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52.40.Hf Plasma-material interactions; boundary layer effects
81.65.-b Surface treatments

Enhanced methyl‐radical production in an Ar‐CH4 pin‐hollow cathode discharge

S. Iizuka, T. Takada, and N. Sato

Appl. Phys. Lett. 64, 1786 (1994); http://dx.doi.org/10.1063/1.111808 (3 pages) | Cited 5 times

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A methyl‐radical formation is observed to be enhanced in an Ar‐CH4 discharge plasma using a hollow cathode with movable pins inside. In the discharge with pins, high energy electrons in the radial edge region of the plasma column produce methyl radicals. They diffuse toward the central region of the plasma column, increasing their density, where the electron temperature is so low (≂0.4 eV) that there occurs no reaction to decrease the methyl‐radical density.
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52.20.-j Elementary processes in plasmas
52.50.-b Plasma production and heating
52.75.-d Plasma devices

Self‐irradiation in potassium halide thermoluminescent crystals

M. Barboza‐Flores, R. Pérez Salas, R. Aceves, L. P. Pashchenko, L. L. Medvedev, and T. M. Piters

Appl. Phys. Lett. 64, 1789 (1994); http://dx.doi.org/10.1063/1.111809 (2 pages) | Cited 6 times

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A self‐irradiation process has been observed in potassium halide thermoluminescent crystals. The 0.0117% abundance of the radioactive nuclide 40K in natural potassium, with a halflife of 1.28×109 years, is responsible for about 4.9 μGy/h of self‐irradiation dose. The present finding is of importance in relation to the performance and limitations of recently proposed solid state dosimeters based on doped potassium halide crystals.
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78.60.Kn Thermoluminescence

Smooth polycrystalline ceramic substrates with enhanced metal adhesion by pulsed excimer laser processing

Douglas H. Lowndes, M. DeSilva, M. J. Godbole, A. J. Pedraza, T. Thundat, and R. J. Warmack

Appl. Phys. Lett. 64, 1791 (1994); http://dx.doi.org/10.1063/1.111810 (3 pages) | Cited 7 times

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Multishot pulsed XeCl (308 nm) excimer laser irradiation of commercial fine‐grained polycrystalline alumina substrates is found to significantly improve their properties for metal film‐bonding applications. A smoother surface finish is obtained, and the adhesion strength of subsequently deposited copper films to the laser‐treated alumina surface is increased by a factor of 3–5 (200%–400%) under optimum laser conditions. Smoothing occurs when the alumina melts and undergoes molten flow before resolidifying. XPS measurements suggest that electrical activation of the near‐surface region also may contribute to the enhanced copper adhesion.
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68.35.Gy Mechanical properties; surface strains
68.60.Bs Mechanical and acoustical properties
81.15.Fg Pulsed laser ablation deposition

Energy dissipation during nanoscale indentation of polymers with an atomic force microscope

E. Boschung, M. Heuberger, and G. Dietler

Appl. Phys. Lett. 64, 1794 (1994); http://dx.doi.org/10.1063/1.112003 (3 pages) | Cited 3 times

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Nanometer size indentations on polypropylene and polymethylmethacrylate were made with the atomic force microscope and were 200-nm wide and 20-nm deep for a tip penetration depth of 75 nm. To image the indentations with the same tip used for writing, the tip was retracted at high speed, thus detaching any polymer sticking on it. Nanomechanical properties of polymer are studied in the limit of shallow indentations and slow penetration speed. From the hysteresis of the force versus tip motion curve, the dissipated energy during the indentation and the inelastic deformation of the polymer surface can be measured. We find that the measured dissipated energy is proportional to the volume of the indentation times the activation energy needed to excite chain segments motion during the deformation.
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61.41.+e Polymers, elastomers, and plastics
62.20.F- Deformation and plasticity
81.40.Lm Deformation, plasticity, and creep

Amorphous diamond from C60 fullerene

Hisako Hirai, Ken‐ichi Kondo, Noriko Yoshizawa, and Minoru Shiraishi

Appl. Phys. Lett. 64, 1797 (1994); http://dx.doi.org/10.1063/1.111811 (3 pages) | Cited 56 times

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Amorphous diamond was successfully quenched from shock‐compressed C60 fullerene by rapid cooling technique. This material is transparent and homogeneous glassy chips, and exists stably at ambient conditions. X‐ray diffractometry showed a halo, and electron diffractometry showed a diffuse pattern similar to those of common amorphous carbon materials. Electron energy loss spectroscopy represented evidently σ‐electron state in sp3 hybridization completely equivalent to that of a typical diamond. Therefore, this material is defined in long range order to be amorphous and in short range order to be diamond, namely it can be said as amorphous diamond.
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61.46.-w Structure of nanoscale materials
81.40.Vw Pressure treatment
81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder

Phase transition of Cu/Si system obtained by ion beam assisted deposition

Jie Yang, H. B. Zhang, Kun Tao, and Yudian Fan

Appl. Phys. Lett. 64, 1800 (1994); http://dx.doi.org/10.1063/1.111812 (3 pages) | Cited 4 times

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Cu films were formed on Si(100) substrates using three different methods: physical vapor deposition (PVD), ion beam assisted deposition (IBAD), and a combined IBAD‐PVD technique. ϵ‐phase (Cu15Si4) was formed directly at the interface of the 14 keV Ar+ IBAD Cu film (350 nm) and the Si substrates during the deposition processes. In the combined film [IBAD Cu (20 nm)+PVD Cu (350 nm)] no new phase was observed until the sample had undergone an annealing treatment (300 °C 30 min), in which the ϵ phase was formed. The phase sequence of the Cu‐Si system in combined films of our experiments is quite different from those observed in a typical annealing process. From discussion the nucleation of ϵ phase is the key factor to obtain a thermodynamically stable phase at the Cu‐Si interface during the annealing process.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
64.70.K- Solid-solid transitions
68.55.-a Thin film structure and morphology

Interface roughness during thermal and ion‐induced regrowth of amorphous layers on Si(001)

M. Lohmeier, S. de Vries, J. S. Custer, E. Vlieg, M. S. Finney, F. Priolo, and A. Battaglia

Appl. Phys. Lett. 64, 1803 (1994); http://dx.doi.org/10.1063/1.111787 (3 pages) | Cited 11 times

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The roughness of Si(001) amorphous/crystalline interfaces, regrown by either solid phase epitaxy (SPE) or ion‐beam‐induced epitaxial crystallization (IBIEC), has been studied by measuring the scattered x‐ray intensity along crystal truncation rods close to Si bulk Bragg peaks. For both regrowth methods, the interface region is well described by a discrete roughness profile. The root‐mean‐square roughnesses are comparable and rather small: 8.0±0.6 Å and 7.4±0.6 Å for the SPE and the IBIEC regrown sample, respectively. This indicates the presence of a common smoothing mechanism.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
81.15.Np Solid phase epitaxy; growth from solid phases
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
61.05.C- X-ray diffraction and scattering

Doping of a quantum dot

Raphael Tsu and Davorin Babić

Appl. Phys. Lett. 64, 1806 (1994); http://dx.doi.org/10.1063/1.111788 (3 pages) | Cited 81 times

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The doping of a quantum dot is an important issue particularly because the luminescence of porous silicon has been attributed to quantum confinement. Since electrochemical etching and possible electroluminescence devices are intimately connected with extrinsic conduction, the quantum size effect on doping, including interactions with induced charges at the dielectric discontinuity, requires investigation.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
77.55.-g Dielectric thin films
78.66.Db Elemental semiconductors and insulators

Stress‐induced leakage current in ultrathin SiO2 films

N. K. Patel and A. Toriumi

Appl. Phys. Lett. 64, 1809 (1994); http://dx.doi.org/10.1063/1.111789 (3 pages) | Cited 29 times

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A detailed study of the phenomena of high field stress‐induced leakage current in thin oxide (5.0–8.0 nm) metal‐oxide‐semiconductor capacitors has been undertaken. The dependence of the stress leakage on the stressing electric field and the oxide thickness were obtained. The results show that the stressing voltage, rather than the electric field, is the dominant factor for determining stress‐induced leakage. Furthermore, a threshold exists for the stressing voltage, below which no stress‐induced leakage occurs. Since the voltage is directly related to the electron energy, these findings are consistent with a model where electrons of energy above a threshold are required to produce the observed stress leakage.
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72.20.-i Conductivity phenomena in semiconductors and insulators
73.50.-h Electronic transport phenomena in thin films
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Femtosecond reflectivity measurements and second harmonic generation in nonresonant excitation of photoconductive switches

U. D. Keil, D. R. Dykaar, R. F. Kopf, and S. B. Darack

Appl. Phys. Lett. 64, 1812 (1994); http://dx.doi.org/10.1063/1.111764 (3 pages) | Cited 5 times

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Field dynamics in a coplanar photoconductive switch are investigated by voltage dependent reflectivity measurements. The comparison of femtosecond pulsed and cw probe beams resolves both linear and nonlinear electro‐optic effects. To avoid carrier effects, measurements were performed with below band gap light. We also report the observation of second harmonic generation near the positive electrode for below band gap excitation.
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78.20.Jq Electro-optical effects
78.30.Fs III-V and II-VI semiconductors
78.47.-p Spectroscopy of solid state dynamics
78.66.Fd III-V semiconductors

In situ investigation of amorphous silicon‐silicon dioxide interfaces by infrared ellipsometry

R. Ossikovski, H. Shirai, and B. Drévillon

Appl. Phys. Lett. 64, 1815 (1994); http://dx.doi.org/10.1063/1.111765 (3 pages) | Cited 4 times

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An in situ investigation of the a‐Si:H‐a‐SiO2 interfaces by infrared phase modulated ellipsometry is presented. 20–30‐Å‐thick intermixing layers are clearly revealed at the interface whatever the deposition sequence. In particular, the presence of SiO and (O)SiHn bonds in the first monolayers of the growth of the ‘‘top’’ a‐Si:H is identified. Likewise a hydrogen accumulation, revealed by SiH vibrations, is observed during the early stage of the growth of a‐SiO2 on top of a‐Si:H. The nature of the a‐Si:H‐a‐SiO2 and a‐Si:H‐a‐SiNx interfaces is compared.
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07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques
07.60.Fs Polarimeters and ellipsometers
73.20.At Surface states, band structure, electron density of states

High‐temperature stable Ir‐Al/n‐GaAs Schottky diodes

T. Lalinský, D. Gregušová, Ž. Mozolová, J. Breza, and P. Vogrinčič

Appl. Phys. Lett. 64, 1818 (1994); http://dx.doi.org/10.1063/1.111988 (3 pages) | Cited 1 time

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We report on the excellent thermal stability of Ir‐Al/GaAs Schottky contact based on sequentially evaporated Ir‐Al bimetallic system with an aluminum concentration of approximately 25 at. %. The contact system is stable up to 950 °C for 10 s (capless rapid thermal annealing) and exhibits an enhancement of the barrier height with the temperature of annealing.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ei Rectification
73.40.Sx Metal-semiconductor-metal structures
73.61.Ey III-V semiconductors

Synthesis and processing of silicon nanocrystallites using a pulsed laser ablation supersonic expansion method

E. Werwa, A. A. Seraphin, L. A. Chiu, Chuxin Zhou, and K. D. Kolenbrander

Appl. Phys. Lett. 64, 1821 (1994); http://dx.doi.org/10.1063/1.111766 (3 pages) | Cited 93 times

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We report the preparation of nanometer sized crystallites of silicon by a pulsed laser ablation supersonic expansion technique. High resolution transmission electron microscopy is used to verify that particles with diameter in the range of ∼3 nm and greater are produced. Glancing angle x‐ray diffraction results confirm that the particles formed have the silicon diamond cubic crystal structure. Visible photoluminescence emission from self‐supporting thin films of agglomerated nanocrystallites is observed under excitation with ultraviolet light.
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79.60.Jv Interfaces; heterostructures; nanostructures
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
81.15.Fg Pulsed laser ablation deposition

Electric‐field‐dependent electroreflectance spectra of visible‐band‐gap (InAlGa)P quantum‐well structures

I. J. Fritz, O. Blum, R. P. Schneider, A. J. Howard, and D. M. Follstaedt

Appl. Phys. Lett. 64, 1824 (1994); http://dx.doi.org/10.1063/1.111767 (3 pages) | Cited 5 times

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We present results from the first studies of electric‐field effects on optical transitions in visible‐band‐gap InGaP/InAlGaP multiple‐quantum‐well (MQW) structures. These structures, grown at 775 °C by metalorganic vapor phase epitaxy on (100) GaAs substrates misoriented 6° towards P(111〉〈111〉A, consist of nominally undoped MQWs surrounded by doped In0.49Al0.51P cladding layers to form p‐i‐n diodes. The Stark shifts of various allowed and forbidden quantum‐well transitions were observed in bias‐dependent electroreflectance spectra of In0.49Ga0.51P/In0.49(Al0.5Ga0.5)0.51P MQW samples with 10‐nm‐thick layers. We find the magnitude of these shifts to depend on the details of the Mg doping profile, confirming the importance of Mg diffusion and unintentional background doping in these materials. Our results show that (InAlGa)P materials are promising for visible‐wavelength electro‐optic modulator applications.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
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