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11 Apr 1994

Volume 64, Issue 15, pp. 1893-2036

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Observation of mode selection in a radially anisotropic cylindrical waveguide with liquid‐crystal cladding

Shu‐Hsia Chen and Tien‐Jung Chen

Appl. Phys. Lett. 64, 1893 (1994); http://dx.doi.org/10.1063/1.111760 (3 pages) | Cited 9 times

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Observation of mode selection in an optical fiber with nematic liquid‐crystal cladding is reported. The TE01 mode is guided, while the TM01 mode leaks out. This behavior is achieved by radially oriented liquid‐crystal directors in the cladding of an optical fiber with isotropic core. A theory which quantitatively accounts for the results is given.
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42.81.Bm Fabrication, cladding, and splicing
42.70.Df Liquid crystals
42.81.Qb Fiber waveguides, couplers, and arrays

Real‐time wave‐amplitude spectrum analyzer for air‐liquid interfaces

J. D. Barter and P. H. Y. Lee

Appl. Phys. Lett. 64, 1896 (1994); http://dx.doi.org/10.1063/1.111761 (3 pages) | Cited 3 times

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We describe a method for the direct, absolute and noninvasive measurement of surface height profiles on air‐liquid interfaces. Wave amplitude spectra are directly obtained from electronically imaged surface height profiles without resorting to problematic reconstructions from wave slope measurements. This measurement principle relies on the volume attenuation of light in the liquid rather than the refraction of light at the wave‐supporting interface. Surface height resolution of tens of micrometers has been demonstrated. A suitable photodiode detector and an appropriate laser provide the two parameters which are sufficient to optimize system spatial and temporal resolution and spatial dynamic range.
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07.60.-j Optical instruments and equipment
68.03.-g Gas-liquid and vacuum-liquid interfaces
68.05.-n Liquid-liquid interfaces

Broadband femtosecond pump‐probe setup operating at 1300 and 1550 nm

J. Mark, N. Tessler, G. Eisenstein, and J. Mørk

Appl. Phys. Lett. 64, 1899 (1994); http://dx.doi.org/10.1063/1.111762 (3 pages) | Cited 2 times

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We describe a broadband, tunable femtosecond pump‐probe measurement setup operating in the 1300 and 1550 nm wavelength range. We demonstrate measurements of carrier dynamics in the barrier states of a multiple quantum well optical amplifier. The amplifier is excited (pumped) in the gain region near 1510 nm and probed, with femtosecond time resolution, in the barrier region, at 1300 nm, yielding dynamical details which cannot be observed with conventional, single‐ wavelength pump‐probe techniques.
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78.47.-p Spectroscopy of solid state dynamics
85.30.De Semiconductor-device characterization, design, and modeling
42.55.Px Semiconductor lasers; laser diodes
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Heavy ion beam pumped visible laser

A. Ulrich, J. Wieser, A. Brunnhuber, and W. Krötz

Appl. Phys. Lett. 64, 1902 (1994); http://dx.doi.org/10.1063/1.111763 (3 pages) | Cited 9 times

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Heavy ion beam pumped laser action was observed in the visible spectral range. This result is encouraging for the potential development of shorter wavelength lasers pumped by heavy ion beams. The laser operated on the 585.25‐nm neon line in He‐Ne‐Ar, He‐Ne‐Kr, and He‐Ne‐Xe mixtures. The laser gas pressure was, typically, 800 hPa and the mixing ratio 92% He, 6% Ne, and 2% Ar (Kr,Xe). Quasicontinuous laser action was obtained using a chopped beam of 120‐MeV 35 Cl ions for pumping. Preliminary spectroscopic studies of the laser medium show selective excitation of the 585.25‐nm line.
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42.60.By Design of specific laser systems
42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.20.Hv Atomic, molecular, ion, and heavy-particle collisions

Cholesteric reflective display: Drive scheme and contrast

D. K. Yang, J. W. Doane, Z. Yaniv, and J. Glasser

Appl. Phys. Lett. 64, 1905 (1994); http://dx.doi.org/10.1063/1.111738 (3 pages) | Cited 41 times

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We studied the electro‐optical response of a bistable cholesteric texture (BCT) display to ac voltage pulses. The material can be driven into states where planar and focal conic textures coexist at zero field and gray scale memory is achieved. According to the properties of the BCT display we designed two drive schemes; one for binary operation and the other for gray scale operation. We made a 320×320 pixel reflective display with a resolution of 80 lines/in. on a passive matrix. Measurement in an integration chamber showed that the display has higher contrast and better viewing angle than a reflective super twisted nematic display.
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78.20.Jq Electro-optical effects
42.79.Kr Display devices, liquid-crystal devices
61.30.-v Liquid crystals

Thiapyrylium dye sensitization of photorefractivity in a polymer composite

Yue Zhang, Christopher A. Spencer, Saswati Ghosal, Martin K. Casstevens, and Ryszard Burzynski

Appl. Phys. Lett. 64, 1908 (1994); http://dx.doi.org/10.1063/1.111739 (3 pages) | Cited 16 times

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An ionic thiapyrylium dye has been used as a photocharge sensitizer for the first time in a photorefractive polymer composite containing poly(9‐vinylcarbazole) and 4‐(N,N‐diethylamino)‐ (β)‐nitrostyrene. Photorefractive gratings are written at a wavelength of 703 nm and four‐wave mixing diffraction efficiencies as high as 2% have been achieved in films less than 200 μm thick. Asymmetric energy transfer has been observed and a two‐beam coupling gain of 7 cm−1 has been obtained. Holographic image recording and retrieving have also been demonstrated.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.70.Jk Polymers and organics
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

GaAs/AlGaAs microdisk lasers

U. Mohideen, W. S. Hobson, S. J. Pearton, F. Ren, and R. E. Slusher

Appl. Phys. Lett. 64, 1911 (1994); http://dx.doi.org/10.1063/1.111740 (3 pages) | Cited 54 times

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GaAs/AlGaAs microdisk lasers have been achieved using continuous optical pumping at 80 K. Surface passivation with a new sulfur/SiNx process is required in order to achieve steady‐state lasing. Approximately 15% of the spontaneous emission is coupled into the lasing mode.
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42.55.Px Semiconductor lasers; laser diodes
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.Fd III-V semiconductors

Luminescent characteristics of a novel porous silicon structure formed in a nonaqueous electrolyte

Eric K. Propst, Melissa M. Rieger, Kirkland W. Vogt, and Paul A. Kohl

Appl. Phys. Lett. 64, 1914 (1994); http://dx.doi.org/10.1063/1.111987 (3 pages) | Cited 6 times

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Novel porous silicon layers which photoluminesce and electroluminesce in an aqueous solution have been formed by oxidation of (100) silicon in anhydrous acetonitrile‐HF solutions. The novel porous structures consisted of large, noninterconnected pores, 1–2 μm diam, which grew normal to the surface. The pores were spaced 2–3 μm apart, and the length, which could be over 150 μm, was dependent on etch time and current density. Microporous structures (i.e., <100 nm), often associated with luminescence from porous silicon, were not detected by TEM, SEM, or infrared examination. The porous surface was hydride terminated, which was critical to the luminescence process. Since water and oxygen were not present during the formation of the porous structure and the pores were relatively large, neither silicon‐oxygen species (e.g., siloxenes) nor quantum size structures, appeared necessary for the generation visible luminescence from porous silicon.
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78.55.Hx Other solid inorganic materials
78.60.Fi Electroluminescence

500 GHz optical short pulse generation from a monolithic passively mode‐locked distributed Bragg reflector laser diode

Shin Arahira, Saeko Oshiba, Yasuhiro Matsui, Tatsuo Kunii, and Yoh Ogawa

Appl. Phys. Lett. 64, 1917 (1994); http://dx.doi.org/10.1063/1.111741 (3 pages) | Cited 26 times

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A 500 GHz optical short pulse train was generated from a passively mode‐locked distributed Bragg reflector laser diode (DBR‐LD). The repetition frequency was thirteen times the fundamental round trip frequency in the LD, and harmonic mode‐locking occurred. The pulse duration was 700 fs and the time‐bandwidth product was 0.51, very close to the transform‐limited value of a Gaussian waveform, 0.44. To our knowledge, this is the first report on the harmonic mode locking of a monolithic passively mode‐locked laser diode.
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42.55.Px Semiconductor lasers; laser diodes
84.30.Ng Oscillators, pulse generators, and function generators
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.Fd III-V semiconductors

New material with strong electro‐optic effect: Rubidium hydrogen selenate (RbHSeO4)

J. P. Salvestrini, M. D. Fontana, M. Aillerie, and Z. Czapla

Appl. Phys. Lett. 64, 1920 (1994); http://dx.doi.org/10.1063/1.111742 (3 pages) | Cited 12 times

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A very large electro‐optic Pockels coefficient is reported in a crystal of rubidium hydrogen selenate. This new material is found to be promising for modulation applications because of its very low half‐wave voltage (∼27 V) which is determined.
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78.20.Jq Electro-optical effects
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
42.70.-a Optical materials

Picosecond pulse generation with a 1.55 μm tunable twin guide laser using blue‐chirp compression

M. Schell, D. Huhse, and D. Bimberg

Appl. Phys. Lett. 64, 1923 (1994); http://dx.doi.org/10.1063/1.111743 (3 pages) | Cited 1 time

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Ultrashort lightpulses at λ=1.55 μm are generated by modulating the emission wavelength of a tunable twin guide laser and subsequent compression of the linearly blue‐chirped part of the output down to 3.5 ps. Its simplicity, the low jitter, and the possibility of direct triggering the pulses are the main advantages of this new method.
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42.60.Fc Modulation, tuning, and mode locking
42.60.By Design of specific laser systems

Experiments with back side gas cooling using an electrostatic wafer holder in an electron cyclotron resonance etching tool

J. A. Meyer, K. H. R. Kirmse, J.‐S. Jenq, S. Y. Perez‐Montero, H. L. Maynard, A. E. Wendt, J. W. Taylor, and N. Hershkowitz

Appl. Phys. Lett. 64, 1926 (1994); http://dx.doi.org/10.1063/1.111744 (3 pages) | Cited 7 times

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Wafer temperature, etch rate, and etch uniformity measurements of SiO2 wafers were made to characterize the use of back side helium cooling with an electrostatic wafer holder in an electron cyclotron resonance etching tool. The etch rate was found to be independent of the wafer temperature in the range between 20 and 110 °C. A 7% increase in etch nonuniformity (3σ) at higher backside pressures was attributed to helium, which leaked around the edge of the wafer, displacing the etchant gas. A back side pressure of 2–3 Torr provides a balance between wafer temperature control and helium leak rates.
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81.65.-b Surface treatments

Secondary electron emission enhancement and defect contrast from diamond following exposure to atomic hydrogen

D. P. Malta, J. B. Posthill, T. P. Humphreys, R. E. Thomas, G. G. Fountain, R. A. Rudder, G. C. Hudson, M. J. Mantini, and R. J. Markunas

Appl. Phys. Lett. 64, 1929 (1994); http://dx.doi.org/10.1063/1.111745 (3 pages) | Cited 25 times

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Polished nominal (100) surfaces of four types of diamonds were exposed to atomic hydrogen by hot filament cracking of H2 gas or by immersion in a H2 plasma discharge. Both types IIa and IIb (100) diamond surfaces exhibited the following characteristic changes: (a) secondary electron (SE) yield increased by a factor of ∼30 as measured in a scanning electron microscope (SEM), (b) near‐surface, nontopographical defects were observable directly using the conventional SE mode of the SEM, (c) surface conductance increased by up to 10 orders of magnitude. These changes were observed only weakly in nitrogen‐containing types Ia and Ib diamonds.
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79.20.Hx Electron impact: secondary emission
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
52.40.-w Plasma interactions (nonlaser)

Fabrication of Si nanostructures with an atomic force microscope

E. S. Snow and P. M. Campbell

Appl. Phys. Lett. 64, 1932 (1994); http://dx.doi.org/10.1063/1.111746 (3 pages) | Cited 199 times

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A method for fabricating Si nanostructures with an air‐operated atomic force microscope (AFM) is presented. An electrically conducting AFM tip is used to oxidize regions of size 10–30 nm of a H‐passivated Si (100) surface at write speeds up to 1 mm/s. This oxide serves as an effective mask for pattern transfer into the substrate by selective liquid etching. The initial oxide growth rate depends exponentially on the applied voltage which produces an effective ‘‘tip sharpening’’ that allows small features to be produced by a relatively large diameter tip.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy

Laser activation of diamond surface for electroless metal plating

S. M. Pimenov, G. A. Shafeev, V. A. Laptev, and E. N. Loubnin

Appl. Phys. Lett. 64, 1935 (1994); http://dx.doi.org/10.1063/1.111747 (3 pages) | Cited 12 times

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Selective area electroless nickel and copper deposition onto the surface of diamond single crystals and polycrystalline diamond films has been realized. Three methods of laser‐assisted activation of diamond surface were applied: (i) prenucleation of diamond surface with a thin layer of palladium catalyst via laser‐induced decomposition of a palladium acetyl‐acetonate [Pd(acac)2] solid film; (ii) deposition of palladium by means of the decomposition of Pd(acac)2 dissolved in dimethylformamide; (iii) laser‐induced damage of diamond surface.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

High‐resolution transmission electron microscopic study of the γ‐FeSi2/Si(111) interface

E. Müller, D. P. Grindatto, H. ‐U. Nissen, N. Onda, and H. von Känel

Appl. Phys. Lett. 64, 1938 (1994); http://dx.doi.org/10.1063/1.111748 (3 pages) | Cited 7 times

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The atomic structure of the B‐type γ‐FeSi2/Si(111) interface has been determined by high‐resolution transmission electron microscopy combined with dynamical calculations of the image contrast. Among four models for the interface considered here, only one is found to agree with the observations. In this model the Fe atoms at the interface are bonded to the substrate silicon atoms and 8‐fold coordinated, as are the Co atoms in the case of CoSi2/Si(111), which is isostructural.
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61.05.J- Electron diffraction and scattering
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Epitaxial growth of diamond films on the {221} and {100} surfaces of c‐BN with microstructures full of (100) facets

W. P. Chai, Y. S. Gu, M. Li, Z. H. Mai, Q. Z. Li, L. Yuan, and S. J. Pang

Appl. Phys. Lett. 64, 1941 (1994); http://dx.doi.org/10.1063/1.111749 (3 pages) | Cited 9 times

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Diamond films on surfaces of cubic boron nitride substrate grown by microwave plasma chemical vapor deposition are investigated. Deposited films are characterized by scanning electron microscopy, reflection high‐energy electron diffraction, and micro‐Raman spectroscopy. We found a new stacking growth mode of the epitaxial diamond films which is distinguished from the previous observed modes. The morphologies of diamond (100) facets formed on the {221} and {100} surfaces of cubic boron nitride are steps and/or stages, respectively. This is beneficial to growing a fair perfect single‐crystal films of diamond.
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81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Electromigration instability: Transgranular slits in interconnects

Z. Suo, W. Wang, and M. Yang

Appl. Phys. Lett. 64, 1944 (1994); http://dx.doi.org/10.1063/1.111750 (3 pages) | Cited 63 times

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Evidence has recently accumulated that an interconnect under intense electric current can fail by a transgranular slit. A rounded void first forms, enlarges, and drifts. When the void becomes sufficiently large, a narrow slit emerges at the expense of the void, running across the linewidth. In this letter we describe a physical mechanism that explains this instability. Both electric current and surface energy drive atoms to diffuse on the void surface, but in the opposite directions. The slit emerges if the electric current prevails. An approximate analysis shows how the slit selects its width and velocity.
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85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
66.30.Qa Electromigration

Surface‐induced ordering: A model for vapor‐deposition growth of amorphous materials

F. Hellman

Appl. Phys. Lett. 64, 1947 (1994); http://dx.doi.org/10.1063/1.111751 (3 pages) | Cited 10 times

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During vapor deposition growth of amorphous materials, we propose that adatom clusters align such as to minimize surface energy. This alignment, a thermally activated process, causes the as‐grown structure of the amorphous thin film to be anisotropic and stabilizes the structure against subsequent relaxation, presumably by reducing free volume. A two‐level‐systems analysis describes the effect of deposition temperature, deposition rate, and subsequent annealing. The model is used to describe the growth‐induced magnetic anisotropy of amorphous Tb‐Fe.
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75.50.Kj Amorphous and quasicrystalline magnetic materials
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
75.30.Gw Magnetic anisotropy
81.40.Rs Electrical and magnetic properties related to treatment conditions

Transient ellipsometric surface photoreflectance applied to GaAs

Michael Y. Frankel and Thomas F. Carruthers

Appl. Phys. Lett. 64, 1950 (1994); http://dx.doi.org/10.1063/1.111752 (3 pages) | Cited 5 times

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We apply a time‐resolved reflection ellipsometric technique to study the dynamic properties of the surface dielectric index of GaAs after optical excitation. The technique allows the separation of the refractive and absorptive components of the dielectric index change and accounts for possible anisotropic effects. The carriers optically injected at the surface create electric field perturbations of ∼7 kV/cm for an average carrier density of ∼1018 cm−3 over a depth of ∼0.25 μm. The measured absorptive component change is shown to be qualitatively different from that typically measured via thin‐film transmission and can be attributed to the Franz–Keldysh effect.
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78.66.Fd III-V semiconductors
07.60.Fs Polarimeters and ellipsometers
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Photoluminescence determination of the Fermi energy in heavily doped strained Si1−xGex layers

M. Líbezný, S. C. Jain, J. Poortmans, M. Caymax, J. Nijs, R. Mertens, K. Werner, and P. Balk

Appl. Phys. Lett. 64, 1953 (1994); http://dx.doi.org/10.1063/1.111753 (3 pages) | Cited 4 times

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Photoluminescence (PL) measurements of strained Si1−xGex heavily doped p‐type layers with different Ge fraction x are reported in this letter. UHV chemical‐vapor‐deposition‐grown samples with x=0.08, 0.12, and 0.16 and doped with 4×1018 cm−3 boron atoms are studied. No‐phonon and TO‐phonon replicas corresponding to free‐electron band‐to‐band transitions are observed. Values of the band‐gap narrowing and Fermi level EF are determined from the PL curves. The earlier theoretical predictions that EF should increase (because of the decrease of the effective density of states) with increasing Ge fraction, are confirmed by PL experiments.
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78.55.Hx Other solid inorganic materials

Band‐structure effects in AlSb‐InAs‐AlSb double‐barrier structures

Jih‐Chen Chiang

Appl. Phys. Lett. 64, 1956 (1994); http://dx.doi.org/10.1063/1.111754 (3 pages) | Cited 8 times

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This letter reports the study of the resonant‐tunneling characteristics of the AlSb‐InAs‐AlSb double‐barrier structures within a second‐neighbor sp3 bond‐orbital model. The model employs one s‐like antibonding orbital and 3 p‐like bonding orbitals per unit site and is capable of describing the lowest conduction band accurately throughout the entire Brillouin zone. The current‐voltage curve thus obtained, compared to those obtained using the nearest‐neighbor sp3 bond‐orbital model or those obtained from the two‐band model, gives a much better agreement with the experiment.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Gk Tunneling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Spiral growth of GaAs by metalorganic vapor phase epitaxy

C. C. Hsu, Y. C. Lu, J. B. Xu, and I. H. Wilson

Appl. Phys. Lett. 64, 1959 (1994); http://dx.doi.org/10.1063/1.111755 (3 pages) | Cited 8 times

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Growth spirals are observed on metalorganic vapor phase epitaxy grown GaAs surfaces by atomic force microscopy. The growth mechanism is according to the classical Burton–Cabrera–Frank theory. Spirals originate from screw dislocations. Successive turns of steps are sent out by the dislocations. These steps are of monolayer height (0.28 nm) and the interstep distance is around 150 nm. The spiral steps are well developed around the screw dislocations, while the adjacent vicinal steps lack the regularity of the spiral steps. Two‐dimensional nucleation islands are also observed on the vicinal steps.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.-a Thin film structure and morphology
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy

High signal to noise level ion beam induced charge images

M. B. H. Breese, J. S. Laird, G. R. Moloney, A. Saint, and D. N. Jamieson

Appl. Phys. Lett. 64, 1962 (1994); http://dx.doi.org/10.1063/1.111756 (3 pages) | Cited 7 times

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The use of MeV α particles to generate ion beam induced charge images with a signal to noise level approximately ten times larger than previously obtained using protons is described. The effect of α particle induced damage on the resultant image contrast is shown and a method of image formation in which the effects of ion induced damage are compensated for is described which enables the use of a higher ion dose.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
61.80.Jh Ion radiation effects
41.75.Ak Positive-ion beams

Estimating oxide‐trap, interface‐trap, and border‐trap charge densities in metal‐oxide‐semiconductor transistors

D. M. Fleetwood, M. R. Shaneyfelt, and J. R. Schwank

Appl. Phys. Lett. 64, 1965 (1994); http://dx.doi.org/10.1063/1.111757 (3 pages) | Cited 18 times

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A simple method is described that combines conventional threshold‐voltage and charge‐pumping measurements on n‐ and p‐channel metal‐oxide‐semiconductor (MOS) transistors to estimate radiation‐induced oxide‐, interface‐, and border‐trap charge densities. In some devices, densities of border traps (near‐interfacial oxide traps that exchange charge with the underlying Si) approach or exceed the density of interface traps, emphasizing the need to distinguish border‐trap contributions to MOS radiation response and long‐term reliability from interface‐trap contributions. Estimates of border‐trap charge densities obtained via this new dual‐transistor technique agree well with trap densities inferred from 1/f noise measurements for transistors with varying channel length.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
78.90.+t Other topics in optical properties, condensed matter spectroscopy and other interactions of particles and radiation with condensed matter (restricted to new topics in section 78)
72.70.+m Noise processes and phenomena
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