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25 Apr 1994

Volume 64, Issue 17, pp. 2191-2317

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Liquid crystal dyes with high solubility and large dielectric anisotropy

Shin‐Tson Wu, J. David Margerum, Mei‐Sing Ho, and Bing M. Fung

Appl. Phys. Lett. 64, 2191 (1994); http://dx.doi.org/10.1063/1.111669 (3 pages) | Cited 11 times

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Several new liquid crystal dyes were synthesized and their physical properties characterized. These dyes exhibit an excellent solubility in nematic liquid crystals, high birefringence, and huge dielectric anisotropy. High solubility results from their small enthalpy of fusion and relatively low melting point, high birefringence from their long molecular conjugation, and huge dielectric anisotropy from their large dipole moment. Potential use of these dyes in infrared and millimeter wave liquid crystal modulators are emphasized.  
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42.70.Df Liquid crystals
61.30.-v Liquid crystals
64.75.-g Phase equilibria
78.20.Jq Electro-optical effects

Dispersion of second‐order optical nonlinearity in chromophoric self‐assembled films by optical parametric amplification: Experiment and theory

Paul M. Lundquist, Shlomo Yitzchaik, Tongguang Zhang, David R. Kanis, Mark A. Ratner, Tobin J. Marks, and George K. Wong

Appl. Phys. Lett. 64, 2194 (1994); http://dx.doi.org/10.1063/1.111670 (3 pages) | Cited 17 times

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The dispersion of the second‐order optical nonlinearity in chromophoric self‐assembled stilbazolium films has been characterized in detail as a function of fundamental wavelength from 800 to 1600 nm using an optical parametric amplifier‐based measurement system. The second‐harmonic generation (SHG) spectrum exhibits a distinctive two‐photon resonance at ℏω=1.3 eV (960 nm). The maximum in the second‐order susceptibility coincides with a low‐energy chromophore‐centered charge‐transfer one‐photon excitation at 480 nm (2.6 eV). The experimental SHG dispersion values compare favorably with theoretical results computed using a semiempirical sum‐over‐states formalism. These indicate that the χ(2) response is dominated by an excitation along the long axis of the stilbazolium chromophore from the highest occupied to the lowest unoccupied molecular orbital.
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42.65.-k Nonlinear optics
42.70.Jk Polymers and organics

Electro‐optic side‐chain polyimide system with large optical nonlinearity and high thermal stability

Wataru Sotoyama, Satoshi Tatsuura, and Tetsuzo Yoshimura

Appl. Phys. Lett. 64, 2197 (1994); http://dx.doi.org/10.1063/1.111671 (3 pages) | Cited 20 times

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We report electro‐optic (EO) efficiency and thermal stability of a poled polyimide system with nonlinear optical dyes as side chains. The side‐chain polyimide system is synthesized from a dianhydride containing azobenzene dye and a diamine. The dye in the polymer is chemically stable for temperatures below 250 °C. The polymer can be poled simultaneously with or after imidization of the polyamic acid. Our sample poled after imidization shows a large EO coefficient (r33=10.8 pm/V at λ=1.3 μm) and long‐term thermal stability at 120 °C.
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42.70.Jk Polymers and organics
42.65.-k Nonlinear optics

Fabrication of vertical‐microcavity quantum wire lasers

T. Arakawa, M. Nishioka, Y. Nagamune, and Y. Arakawa

Appl. Phys. Lett. 64, 2200 (1994); http://dx.doi.org/10.1063/1.111672 (3 pages) | Cited 22 times

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A strained InGaAs quantum wire laser with a vertical microcavity structure was fabricated for the first time. In this laser structure, quantum wires with a lateral width of about 10 nm were grown by a selective metalorganic chemical vapor deposition technique. The length of the microcavity was 4λ(λ=883 nm), with AlAs/AlGaAs distributed Bragg reflectors. The cavity effect was demonstrated by the measurement of photoluminescence with and without the cavity. Lasing oscillation was observed at 77 K by optical pumping.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
68.55.-a Thin film structure and morphology

Limitations of two‐dimensional passive waveguide model for λ=980 nm Al‐free ridge waveguide lasers

J. Näppi, A. Ovtchinnikov, H. Asonen, P. Savolainen, and M. Pessa

Appl. Phys. Lett. 64, 2203 (1994); http://dx.doi.org/10.1063/1.111673 (3 pages) | Cited 7 times

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The performance characteristics of ridge waveguide InGaAs/InGaAsP/GaAs strained quantum well lasers emitting at 980 nm are reported. Factors limiting the validity of a passive waveguide two‐dimensional approximation model are investigated. In particular, is was found that a gain‐guiding effect is responsible for the fundamental mode stabilization and lateral far‐field broadening. Ridge waveguide laser parameters which influence the stability of lateral single mode operation are discussed. An output power of 180 mW in spatial single mode operation was attained, and it was limited by catastrophic optical damage of the mirror facet.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Carrier heating in InGaAsP laser amplifiers due to two‐photon absorption

J. Mørk, J. Mark, and C. P. Seltzer

Appl. Phys. Lett. 64, 2206 (1994); http://dx.doi.org/10.1063/1.111674 (3 pages) | Cited 41 times

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The carrier dynamics in an InGaAsP quantum‐well laser amplifier excited by an ultrashort optical pulse is investigated experimentally as well as theoretically. For operation in the absorption region, a transition from pump induced cooling to pump induced heating of the carriers is observed for increasing pump pulse energy and is attributed to the generation of hot carriers through two‐photon absorption. The results further support the interpretation of the carrier dynamics in the perturbative regime.
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78.47.-p Spectroscopy of solid state dynamics
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.55.Px Semiconductor lasers; laser diodes
78.66.Fd III-V semiconductors

Optically induced rotation of anisotropic micro‐objects fabricated by surface micromachining

E. Higurashi, H. Ukita, H. Tanaka, and O. Ohguchi

Appl. Phys. Lett. 64, 2209 (1994); http://dx.doi.org/10.1063/1.111675 (2 pages) | Cited 85 times

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Optical trapping and directional high‐speed rotation by radiation pressure are demonstrated for anisotropic micro‐objects fabricated by reactive ion‐beam etching. These micro‐objects, which have shape dissymmetry (not bilateral symmetry but rotational symmetry) in the horizontal cross section, rotate about the laser beam axis in the designed direction in a liquid medium (e.g., water or alcohol). The rotation speed is almost proportional to the input laser power.
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42.62.-b Laser applications
07.60.-j Optical instruments and equipment

Experimental comparison of strained quantum‐wire and quantum‐well laser characteristics

Sandip Tiwari and Jerry M. Woodall

Appl. Phys. Lett. 64, 2211 (1994); http://dx.doi.org/10.1063/1.111676 (3 pages) | Cited 11 times

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Measured gain compression, differential gain, and damping of strained quantum wire lasers are reported and related to attributes specifically traceable to carrier confinement in two dimensions. A comparison is made with the properties of ridge lasers grown simultaneously. Damping and K factors are found to be comparable in the two structures. The differential gain is found to increase by two orders of magnitude (from 2.1×10−15 to 1.5×10−13 cm2), but the most significant consequence is an order of magnitude increase in gain compression (from 2.5×10−17 to 1.8×10−16 cm3), which limits the bandwidth. Carrier occupation, relaxation, recombination from multiple subbands, intersubband processes, high photon density, and consequent carrier heating and spatial hole burning effects in quantized structures are conjectured to cause some of the observed characteristics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Position‐dependent exciton‐photon mode splitting in a microcavity

A. Frey, G. Jungk, and R. Hey

Appl. Phys. Lett. 64, 2214 (1994); http://dx.doi.org/10.1063/1.111677 (3 pages) | Cited 8 times

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Exciton‐photon mode interaction of In0.1Ga0.9As quantum wells (QWs) in a λ/2 microcavity has been studied using classical linear dispersion theory. In a system consisting of a GaAs cavity with one QW surrounded by Al0.3Ga0.7As/AlAs and GaAs/AlAs Bragg reflectors grown by molecular beam epitaxy, the interaction is found to be strongest at the ends of the cavity and is vanishing in the center of it. The behavior in the center position is changed by inserting a second QW into the cavity. Reflectance and photoluminescence measurements show modulation effects by QW absorption in accordance with the calculations.  
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
42.50.-p Quantum optics
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Electromagnetically excited acoustic resonance for evaluating attenuation coefficient and grain size in polycrystalline metals

M. Hirao and H. Ogi

Appl. Phys. Lett. 64, 2217 (1994); http://dx.doi.org/10.1063/1.111678 (3 pages) | Cited 1 time

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An experiment on an acoustic resonance spectrometer for evaluating attenuation characteristics and grain size of polycrystalline metals is described. A noncontacting electromagnetic acoustic transducer is excited to establish a shear‐wave ringing in a plate sample and the amplitude spectrum is obtained by sweeping the driving rf frequency through the resonances. At each resonance frequency, the sample rings down exponentially with time. The wave form is acquired to determine the time constant, or the attenuation coefficient, whose frequency dependence is finally related to the average grain size through the Rayleigh scattering theory. This nondestructive evaluation agreed with the photomicrographic examination to an accuracy of 6 μm for a relatively narrow distribution of grain size in low carbon steels.
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61.72.Mm Grain and twin boundaries
43.35.Yb Ultrasonic instrumentation and measurement techniques
43.38.Dv Electromagnetic and electrodynamic transducers

Generation of high‐peak pulse beam of hydrogen plasma for use in short‐pulsed chemical beam epitaxy

Kazunari Ozasa and Yoshinobu Aoyagi

Appl. Phys. Lett. 64, 2220 (1994); http://dx.doi.org/10.1063/1.111679 (3 pages) | Cited 3 times

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We present and discuss the generation of high‐peak pulse beam of hydrogen plasma, which has a high potential for use in semiconductor crystal growth. The scheme proposed in the present work is the pulse injection of hydrogen gas to a compact electron cyclotron resonance plasma gun, in order to achieve a relatively high concentration of hydrogen in a small microwave discharge cavity and the increase of plasma intensity for a short time after stopping the hydrogen injection. By this scheme, plasma pulses having 170‐ms width and peak intensity 50–600 times higher than the case of continuous hydrogen flow can be generated. The total ion current obtained was higher as well, since plasma intensity was found to increase superlinearly with hydrogen supply. The application of the high‐peak hydrogen plasma pulses to crystal growth was briefly examined in short‐pulsed chemical beam epitaxy of AlAs.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
52.80.Pi High-frequency and RF discharges

Ultra‐low‐temperature growth of high‐integrity gate oxide films by low‐energy ion‐assisted oxidation

Y. Kawai, N. Konishi, J. Watanabe, and T. Ohmi

Appl. Phys. Lett. 64, 2223 (1994); http://dx.doi.org/10.1063/1.111680 (3 pages) | Cited 25 times

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The gate oxide films have been grown at a temperature as low as 450 °C by direct oxidation of silicon. Such a low‐temperature oxidation has been realized by employing a precision controlled ion bombardment in an Ar/O2 mixed plasma for the surface activation. Perfectly controlled Ar ions give the bombardment energy for the oxide film growth. Dielectric breakdown fields of 10 MV/cm are achieved. Integration in a total low‐temperature device process has been demonstrated by fabricating self‐aligned Al‐gate metal‐oxide‐silicon field effect transistor (MOSFET) formed without any heat processing over 450 °C. The precise control of the ion bombardment is quite essential for the low‐temperature process.  
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81.65.-b Surface treatments
61.80.Jh Ion radiation effects
85.30.Tv Field effect devices

Ultrathin device quality oxide‐nitride‐oxide heterostructure formed by remote plasma enhanced chemical vapor deposition

Y. Ma, T. Yasuda, and G. Lucovsky

Appl. Phys. Lett. 64, 2226 (1994); http://dx.doi.org/10.1063/1.111681 (3 pages) | Cited 42 times

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In this letter, we report our study on an oxide‐nitride‐oxide (ONO) heterostructure as a dielectric material in a metal‐insulator‐semiconductor field‐effect transistor with Si as a semiconductor. The electrical properties of the ONO dielectrics have been correlated with: (i) the process related effects; (ii) the accumulation of N atoms and its bonding with Si at the SiO2/Si interface; and (iii) the chemical bonding within the nitride layers. By combining the remote plasma enhanced chemical vapor deposition and the rapid thermal annealing process, the device quality ONO structure with an oxide equivalent thickness of 4.7 nm has been successfully manufactured.  
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
85.30.Tv Field effect devices
68.55.-a Thin film structure and morphology

Electrical conductivity of combustion flame synthesized diamond

K. V. Ravi, C. A. Koch, D. S. Olson, P. Choong, J. W. Vandersande, and L. D. Zoltan

Appl. Phys. Lett. 64, 2229 (1994); http://dx.doi.org/10.1063/1.111685 (3 pages) | Cited 5 times

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The electrical conductivity, from room temperature to 1000 °C, of combustion flame synthesized diamond films and free‐standing diamond slabs are demonstrated to be up to two orders of magnitude lower than that of type IIa natural diamond crystals. The low conductivity, indicative of high purity, has been achieved at diamond growths rates of 5–10 μm/h, considerably higher than that achievable with other diamond synthesis techniques. These high growth rates have been achieved over areas of 5 cm×5 cm and both thin (10 μm) films on silicon substrates and thick (∼80 μm), free‐standing diamond slabs exhibit similar electrical behavior. The high purity of this diamond is attributed to the presence of oxidizing species in the flame ambient which are more effective than hydrogen in removing any nondiamond forms of carbon and other impurities from the growing diamond film.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.61.Cw Elemental semiconductors

Monolayer analysis in Rutherford backscattering spectroscopy

Kenji Kimura, Kazuomi Ohshima, and Michi‐hiko Mannami

Appl. Phys. Lett. 64, 2232 (1994); http://dx.doi.org/10.1063/1.111653 (3 pages) | Cited 28 times

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Energy spectra of 300‐keV He ions backscattered from single‐crystal surfaces are measured with a 90° magnetic spectrometer at grazing exit angles. The ions scattered from successive atomic layers can be resolved as separated peaks in the energy spectra. It is shown that both high energy resolution and the grazing angle technique are essential to the monolayer analysis.
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61.85.+p Channeling phenomena (blocking, energy loss, etc.)
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Room‐temperature electroluminescence from Er‐doped crystalline Si

G. Franzò, F. Priolo, S. Coffa, A. Polman, and A. Carnera

Appl. Phys. Lett. 64, 2235 (1994); http://dx.doi.org/10.1063/1.111655 (3 pages) | Cited 214 times

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We have obtained room‐temperature electroluminescence (EL) at ∼1.54 μm from Er and O co‐doped crystalline p‐n Si diodes fabricated by ion implantation, under both forward and reverse bias conditions. Under forward bias, the EL intensity decreases by a factor of ∼15 on going from 110 to 300 K, where a weak peak is still visible. In contrast, we report the first sharp luminescence peak obtained under reverse bias conditions in the breakdown regime. In this case the EL intensity decreases only by a factor of 4 on going from 110 to 300 K and the room‐temperature yield is more than one order of magnitude higher than under forward bias. The data suggest that Er excitation occurs through electron‐hole mediated processes under forward bias and through impact excitation under reverse bias.  
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78.60.Fi Electroluminescence
71.55.Cn Elemental semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Si δ‐doping of 〈011〉‐oriented GaAs and AlxGa1−xAs grown by molecular‐beam epitaxy

E. F. Schubert, Loren Pfeiffer, K. W. West, H. S. Luftman, and G. J. Zydzik

Appl. Phys. Lett. 64, 2238 (1994); http://dx.doi.org/10.1063/1.111656 (3 pages) | Cited 3 times

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Silicon δ‐doping is studied on 〈011〉‐oriented GaAs and AlxGa1−xAs grown by molecular‐beam epitaxy. Hall measurements and secondary ion mass spectrometry on as‐grown and on annealed samples reveal (i) that the electrical activity is reduced for the 〈011〉‐oriented samples as compared 〈001〉‐oriented reference samples, (ii) that the electron mobility is lower for 〈011〉‐oriented samples, and (iii) that the thermal redistribution of Si impurities is comparable for both orientations. We find a markedly different dependence of the electron mobility on the spacer thickness in selectively doped 〈011〉‐oriented AlxGa1−xAs/GaAs heterostructures, which is explained by the reduced doping efficiency of Si in 〈011〉‐oriented AlxGa1−xAs.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.61.Ey III-V semiconductors

Mechanisms of epitaxial CoSi2 formation in the multilayer Co/Ti‐Si(100) system

Feng Hong, George A. Rozgonyi, and Bijoy K. Patnaik

Appl. Phys. Lett. 64, 2241 (1994); http://dx.doi.org/10.1063/1.111657 (3 pages) | Cited 15 times

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We describe how the unique growth environment provided by a multilayer Co/Ti(O)‐Si structure leads to the formation of epitaxial CoSi2/Si(100). A key factor is the preferential nucleation of (311) CoSi which is the dominant phase from 650 to 800 °C in this multilayer system. Epitaxial CoSi2 then nucleates at the (311) CoSi/(100) Si interface and grows during a 900 °C second annealing. Having Ti as the first layer in contact with the Si substrate reduces the native Si oxide and residual impurities. The amorphous Ti(O) provides a uniform supply of slowly diffusing Co that promotes preferential CoSi formation. The upper Co and Ti layers serve to stabilize the reaction and suppress agglomeration.
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81.15.Np Solid phase epitaxy; growth from solid phases
68.35.Fx Diffusion; interface formation
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

GaAs/AlGaAs multiquantum well resonant photorefractive devices fabricated using epitaxial lift‐off

C. S. Kyono, K. Ikossi‐Anastasiou, W. S. Rabinovich, S. R. Bowman, D. S. Katzer, and A. J. Tsao

Appl. Phys. Lett. 64, 2244 (1994); http://dx.doi.org/10.1063/1.111658 (3 pages) | Cited 12 times

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This letter deals with resonant photorefractive devices fabricated from multiquantum wells of GaAs/Al0.3Ga0.7As and operated in a quantum‐confined Stark effect geometry. Details of the processing are presented. Epitaxial lift‐off was used to remove the active device from the substrate. Low‐temperature Al0.3Ga.07As was used as an insulator to form metal‐insulator‐semiconductor structures on both sides of the multiquantum wells. Proton implant damage was used to improve the fringe visibility. Photorefractive wave mixing with a diffraction efficiency of ∼0.03% was demonstrated. The incorporation of a nitride layer between the top electrode and the low‐temperature AlGaAs increased the efficiency to 0.5%. The improvement is attributed to a reduction in the conduction of carriers across the low‐temperature layer into the electrode.
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42.79.-e Optical elements, devices, and systems
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.82.Cr Fabrication techniques; lithography, pattern transfer

Measurement of the effective temperature of majority carriers under injection of hot minority carriers in heterostructures

G. L. Belenky, A. Kastalsky, S. Luryi, P. A. Garbinski, A. Y. Cho, and D. L. Sivco

Appl. Phys. Lett. 64, 2247 (1994); http://dx.doi.org/10.1063/1.111659 (3 pages) | Cited 3 times

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We propose and demonstrate a purely electrical method for measuring the effective temperature Te of majority carriers under the injection of hot minority carriers. The Te of holes in a thin p‐type InGaAs layer, heated by electron injection from an InAlAs layer in a three‐terminal lattice‐matched heterostructure, was determined by measuring the thermionic emission current of holes over another specially designed InGaAs/InAlAs barrier. At T=77 K, we observed an overheating Te−T of over 50 K, even at moderate injection power levels.
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73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.61.Ey III-V semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

AlGaAs/InGaAs/GaAs single electron transistors fabricated by Ga focused ion beam implantation

Toshimasa Fujisawa, Yoshiro Hirayama, and Seigo Tarucha

Appl. Phys. Lett. 64, 2250 (1994); http://dx.doi.org/10.1063/1.111634 (3 pages) | Cited 13 times

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Single electron transistors are formed in an AlGaAs/InGaAs/GaAs modulation‐doped heterostructure by Ga focused ion beam implantation. The AlGaAs/InGaAs/GaAs system has a high two‐dimensional electron gas density and facilitates a lateral constriction whose depletion length is much smaller than that in a conventional AlGaAs/GaAs system. A dot structure confined by a small depletion spreading of less than 0.15 μm is formed by the ion implantation. This ion implantation is also employed to form in‐plane gates for controlling the tunneling junctions between the dot and reservoirs, and the number of electrons in the dot. Coulomb oscillations and a Coulomb staircase have been clearly observed by controlling three in‐plane gates.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
61.72.uj III-V and II-VI semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Gk Tunneling

Writing electronic nanometer structures into porous Si films by scanning tunneling microscopy

M. Enachescu, E. Hartmann, and F. Koch

Appl. Phys. Lett. 64, 2253 (1994); http://dx.doi.org/10.1063/1.111635 (3 pages) | Cited 5 times

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Under conditions of increased tunnel current and voltage, with the electron flow directed towards the sample, nanometer‐scale structures have been written into ultrathin (∼20 nm) light‐emitting porous silicon (PS) films using scanning tunneling microscopy in a high‐vacuum environment. For the writing process, a threshold voltage of ∼4.5 V is observed and the resulting dimensions range between 20 and 50 nm. Depending on the writing parameters, the modified regions relax or remain stable during the observation time of several days at room temperature. These results can be assigned, in the first case, to a disruption of a small number of bonds, followed by reconfiguration, and a charging of dangling bond sites, followed by carrier release, in near surface regions. In the latter case, the creation of time‐stable defect states within the PS layer is proposed.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
68.55.-a Thin film structure and morphology

Resistance switching in indium phosphide using hydrogen passivation of acceptors

Sathya Balasubramanian, Vikram Kumar, N. Balasubramanian, and V. Premachandran

Appl. Phys. Lett. 64, 2256 (1994); http://dx.doi.org/10.1063/1.111636 (2 pages) | Cited 5 times

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This letter demonstrates the use of dopant passivation by hydrogen in a highly doped semiconductor, for resistance switching applications. The acceptor passivation by hydrogen was utilized to form a rectifying contact on InP which otherwise showed nonrectifying behavior due to high dopant concentration. A reverse bias annealing of the diodes converted the rectifying contact into a nonrectifying one whereas an anneal without bias left it unchanged. The attainment of selective conversion is explained in terms of the reactivation processes involved.
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71.55.Eq III-V semiconductors
61.72.uj III-V and II-VI semiconductors
72.80.Ey III-V and II-VI semiconductors

Competition between negative and positive photoconductivity in silicon planar‐doped GaAs

A. G. de Oliveira, G. M. Ribeiro, D. A. W. Soares, and H. Chacham

Appl. Phys. Lett. 64, 2258 (1994); http://dx.doi.org/10.1063/1.111637 (3 pages) | Cited 8 times

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Photo‐Hall free electron concentrations were measured on molecular beam epitaxy grown silicon planar‐doped GaAs samples, with silicon nominal concentration ranging from 1.4×1012 to 8.8×1013 cm−2, as function of temperature. We found conclusive results showing competition between positive photoconductivity and negative persistent photoconductivity effects. At temperatures below a critical Tc, the negative photoconductivity effect is dominant, while above Tc the positive effect dominates. We also found some evidence that the positive effect is related to spatial charge separation and that the negative effect is related to the DX center.
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72.40.+w Photoconduction and photovoltaic effects
71.55.Eq III-V semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Formation of interfacial phases between silica and undoped or antimony‐doped silicon melts

Xinming Huang, Kazutaka Terashima, Yutaka Anzai, Eiji Tokizaki, Hitoshi Sasaki, and Shigeyuki Kimura

Appl. Phys. Lett. 64, 2261 (1994); http://dx.doi.org/10.1063/1.111638 (3 pages) | Cited 3 times

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Interfacial phase formation during dissolution of silica in undoped or Sb‐doped Si melts were studied using electron probe microanalysis. Results showed that reaction between silica and the Si melt depended on the Sb concentration in the Si melt. A foil‐shaped interfacial phase with a composition about SiO1.8 appeared between the Si melt and the wall of the silica ampoule when the Sb concentration was less than 0.5 at. %. However, the interfacial phase changed both in shape and composition when the Sb concentration was higher. The shape of the interfacial phase became dendritic and the composition was SiO2 when the Sb concentration was in the range from 0.5 to 2.0 at. %. The interfacial phase disappeared when the Sb concentration was higher than 2.0 at. %.
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81.10.Fq Growth from melts; zone melting and refining
61.72.uf Ge and Si
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