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9 May 1994

Volume 64, Issue 19, pp. 2471-2607

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Formation and quenching mechanisms of the electron beam pumped (XeRb)+ ionic excimer in different buffer gases

F. T. J. L. Lankhorst, H. M. J. Bastiaens, P. J. M. Peters, and W. J. Witteman

Appl. Phys. Lett. 64, 2471 (1994); http://dx.doi.org/10.1063/1.111600 (3 pages) | Cited 3 times

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The ionic excimer molecule XeRb+ is formed in an electron beam excited gas mixture of Xe, Rb, and a buffer gas. The formation and quenching mechanisms of ionic excimers are investigated by measuring the XeRb+ fluorescence as a function of the gas composition and gas pressure. The formation of XeRb+ is achieved by a three‐body association reaction between Xe+, Rb, and a buffer gas atom. For the buffer gases He, Ne, or Ar the values of the important formation rate constants are determined from the observed fluorescence signal decay.
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33.20.Ni Vacuum ultraviolet spectra
42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems
34.90.+q Other topics in atomic and molecular collision processes and interactions (restricted to new topics in section 34)

Double‐heterostructure diode lasers emitting at 3 μm with a metastable GaInAsSb active layer and AlGaAsSb cladding layers

H. K. Choi, S. J. Eglash, and G. W. Turner

Appl. Phys. Lett. 64, 2474 (1994); http://dx.doi.org/10.1063/1.111601 (3 pages) | Cited 41 times

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Double‐heterostructure diode lasers emitting at 3 μm have exhibited pulsed operation at temperatures up to 255 K and cw operation up to 170 K, with cw output power of 45 mW/facet at 100 K. The laser structure, grown on GaSb substrates by molecular beam epitaxy, has a metastable GaInAsSb active layer and AlGaAsSb cladding layers. The lowest pulsed threshold current density is 9 A/cm2 obtained at 40 K. The characteristic temperature is 35 K at low temperatures and 28 K above 120 K.
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42.55.Px Semiconductor lasers; laser diodes
78.66.Fd III-V semiconductors
78.40.Ha Other nonmetallic inorganics
85.60.Jb Light-emitting devices

Ultraviolet generation at 266 nm in a novel organic nonlinear optical crystal: l‐pyrrolidone‐2‐carboxylic acid

Manabu Kitazawa, Ryoichi Higuchi, Mitsuo Takahashi, Tatsuo Wada, and Hiroyuki Sasabe

Appl. Phys. Lett. 64, 2477 (1994); http://dx.doi.org/10.1063/1.111602 (3 pages) | Cited 24 times

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A novel organic nonlinear optical crystal, l‐pyrrolidone‐2‐carboxylic acid (l‐PCA), has been found to be phase matchable for second‐harmonic generation (SHG) and sum‐frequency mixing down to the UV range at room temperature. Tunable radiation down to 266 nm was obtained. The nonlinear coefficient d14 of l‐PCA for the fundamental wavelength of 532 nm was determined to be 0.32 pm/V. The angular acceptance (the full width at half‐maximum) of the type II phase‐matched SHG has also been measured to be 3.03 mrad cm which agreed with the calculated value. This value is much larger than that of the type I phase‐matched SHG in β‐BBO.
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42.70.Jk Polymers and organics
78.40.Ha Other nonmetallic inorganics
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

2.7–3.9 μm InAsSb(P)/InAsSbP low threshold diode lasers

A. N. Baranov, A. N. Imenkov, V. V. Sherstnev, and Yu. P. Yakovlev

Appl. Phys. Lett. 64, 2480 (1994); http://dx.doi.org/10.1063/1.111603 (3 pages) | Cited 30 times

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Lasing has been obtained in the wavelength range 2.7–3.9 μm in double heterostructure diode lasers with an active region made of InAs alloys. The devices were grown by liquid‐phase epitaxy. Typical values of threshold current at 80 K were as low as 40 mA and the maximum operating temperature was 180 K. The blue shift of lasing modes was observed with current. This was explained by the increase of the carrier density in the active region above threshold due to intervalence band absorption.  
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
78.45.+h Stimulated emission
78.66.Fd III-V semiconductors

Site characterization of rare‐earth‐doped LiNbO3 using total site selective spectroscopy

D. M. Gill, J. C. Wright, and L. McCaughan

Appl. Phys. Lett. 64, 2483 (1994); http://dx.doi.org/10.1063/1.111605 (3 pages) | Cited 36 times

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A technique, total site selective spectroscopy, is presented to optically identify spectroscopic sites in Er:LiNbO3. Six sites are seen; four major nonclustered sites and two minor cluster sites. When pumping the 4F9/2 manifold at low temperatures (∼12 K), only cluster sites are found to upconvert using a nonradiative energy transfer mechanism. The polarization of Er3+ absorption cross sections are shown to be site dependent while the manifold lines from different sites are highly degenerate. These characteristics likely contribute to the observed simultaneous lasing at two wavelengths of devices based in this medium.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.40.Kc Metals, semimetals, and alloys
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.30.Hv Other nonmetallic inorganics

Microcavity effects in organic semiconductors

A. Dodabalapur, L. J. Rothberg, T. M. Miller, and E. W. Kwock

Appl. Phys. Lett. 64, 2486 (1994); http://dx.doi.org/10.1063/1.111606 (3 pages) | Cited 110 times

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Microcavity structures containing hydroxyquinoline aluminum and diamine layers commonly used in electroluminescent devices are described. We show that it is possible to obtain emission at red, green, and blue wavelengths by changing the thickness of a polyimide filler layer in the cavity. The angular dependence of the emission wavelength and linewidth are reported and the implications for organic electroluminescent color displays are discussed.
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78.55.Kz Solid organic materials
42.70.Jk Polymers and organics
78.66.Qn Polymers; organic compounds
85.60.Jb Light-emitting devices

Conjugated photorefractive polymer

Luping Yu, Yongming Chen, Wai Kin Chan, and Zhonghua Peng

Appl. Phys. Lett. 64, 2489 (1994); http://dx.doi.org/10.1063/1.111607 (3 pages) | Cited 15 times

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A novel type of photorefractive polymer, containing a conjugated backbone and a second order nonlinear optical chromophore, has been developed. It was expected that the conjugated backbone would absorb photons in the visible region and play the triple role of charge generator, charge transporter, and backbone. Several physical measurements demonstrated this expectation. Two beam coupling experiments clearly indicated an asymmetric optical energy exchange between two beams without applying an external electrical field. This is a conclusive signature for photorefractivity. Also, large optical gain, 5.7 cm−1, was observed under zero‐field condition.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.70.Jk Polymers and organics
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Investigation of carrier heating and spectral hole burning in semiconductor amplifiers by highly nondegenerate four‐wave mixing

A. D’Ottavi, E. Iannone, A. Mecozzi, S. Scotti, P. Spano, J. Landreau, A. Ougazzaden, and J. C. Bouley

Appl. Phys. Lett. 64, 2492 (1994); http://dx.doi.org/10.1063/1.111576 (3 pages) | Cited 28 times

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A highly nondegenerate (up to 1 THz) four‐wave mixing experiment is performed in a bulk semiconductor amplifier. The simultaneous presence of carrier heating and spectral hole burning shows up in a four‐wave mixing experiment. A simple physical picture is given that explains the relative weight of the two saturation mechanisms in active semiconductor devices.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
85.30.-z Semiconductor devices

GaAs quantum dots with lateral dimension of 25 nm fabricated by selective metalorganic chemical vapor deposition growth

Y. Nagamune, M. Nishioka, S. Tsukamoto, and Y. Arakawa

Appl. Phys. Lett. 64, 2495 (1994); http://dx.doi.org/10.1063/1.111577 (3 pages) | Cited 29 times

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We report on in situ fabrication and the photoluminescence spectra of pyramid‐shaped GaAs dot structures grown on (100) GaAs substrates using selective epitaxial growth by metalorganic chemical vapor deposition. The dot structures have lateral size of 25 nm and the period of 140 nm, showing a clear photoluminescence peak with strong intensity. In addition, energy change of magnetophotoluminescence spectra demonstrates the enhancement of exciton binding energy due to lateral confinement.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.55.Cr III-V semiconductors
85.40.Hp Lithography, masks and pattern transfer
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Method for imaging sidewalls by atomic force microscopy

Yves Martin and H. Kumar Wickramasinghe

Appl. Phys. Lett. 64, 2498 (1994); http://dx.doi.org/10.1063/1.111578 (3 pages) | Cited 63 times

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We demonstrate a new method for imaging vertical and near vertical surface features by atomic force microscopy (AFM). It is based on an attractive force mode AFM, equipped with a special boot‐shaped tip, coupled with a measurement of slope and with a special tracking technique. Surface profiling is achieved through a novel servo and scanning system. Mapping sidewall profile opens the door to measurement of critical dimensions (width and wall angles) of lines and trenches in integrated circuits, with high accuracy.
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68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
42.30.Wb Image reconstruction; tomography

Observation of slow positron annihilation in silicide films formed by solid state interaction of Co/Ti/Si and Co/Si

Ping Liu, Chenglu Lin, Zuyao Zhou, Shichang Zou, Huiming Weng, Rongdian Han, and Bingzong Li

Appl. Phys. Lett. 64, 2501 (1994); http://dx.doi.org/10.1063/1.111579 (3 pages)

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Slow positron beam was used to investigate the solid state reaction of Co/Si and Co/Ti/Si. Variable‐energy (0–20 keV) positrons were implanted into samples at different depths. The Doppler broadening of the annihilation γ‐ray energy spectra measured at a number of different incident positron energies were characterized by a line‐shape parameter ‘‘S.’’ It was found that the measured S parameters were sensitive to thin‐film reaction and crystalline characteristics. In particular, the S parameter of epitaxial CoSi2 formed by the ternary reaction was quite different with that of the polycrystalline CoSi2 formed by direct reaction of Co with Si.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
78.70.Bj Positron annihilation

Large differences in Ti thermal diffusion caused domain inversion between undoped and MgO‐doped LiNbO3

C. Q. Xu, H. Okayama, and M. Kawahara

Appl. Phys. Lett. 64, 2504 (1994); http://dx.doi.org/10.1063/1.111580 (3 pages) | Cited 1 time

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The periodic modulation of domain polarizations by Ti thermal diffusion on the +c face of LiNbO3 with and without MgO doping was studied systematically. It was shown that the depth of the inverted domain is quite different for these two substrates. Under the same fabrication conditions, the depth of domain inversion in the MgO‐doped substrate is less than one‐tenth that of the undoped substrate. This large difference can be explained by the presence of MgO in LiNbO3, which decreases the Ti diffusion constant and increases the minimum Ti concentration required for domain inversion.
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66.30.-h Diffusion in solids
75.60.Ch Domain walls and domain structure

Charge trapping levels in vacuum evaporated polyvinylidene fluoride films

Suresh Chand, R. C. Bhatheja, G. D. Sharma, and Subhas Chandra

Appl. Phys. Lett. 64, 2507 (1994); http://dx.doi.org/10.1063/1.111581 (2 pages) | Cited 2 times

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Thermally stimulated discharge current (TSD) behavior of vacuum evaporated polyvinylidene fluoride films (∼5000 Å) has been studied at different polarization fields (2.0×103–1.8×104 V cm−1) and temperatures (333–393 K). The TSD spectra of these films show a single relaxation peak the position and activation energy of which depends on the polarization parameters. The origin of the peak has been attributed to the migration of the charge carriers, injected from the electrodes, at the macroscopic distances and their subsequent trapping; the trapping levels being distributed in their energies and lie between 0.46 and 0.72 eV, respectively.
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73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Crystal structure and optical properties of polymorphic octasilacubane

Hiroaki Tachibana, Midori Goto, Mutsuyoshi Matsumoto, Hideo Kishida, and Yoshinori Tokura

Appl. Phys. Lett. 64, 2509 (1994); http://dx.doi.org/10.1063/1.111556 (2 pages) | Cited 7 times

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Single crystal x‐ray crystallographic analysis of tert‐butyloctasilacubane showed that a new polymorphic form (β form) exists with a slightly modified shape of the Si cage as compared with the previously reported form (α form) [K. Furukawa, M. Fujino, and N. Matsumoto, Appl. Phys. Lett. 60, 2744 (1991)]. Spectroscopic investigations of the single crystal indicate that the electronic band gap and luminescence band position differ by ∼0.4 eV between the polymorphs, signaling the sensitivity of the electronic structure to the distortion of the octasilacubane framework.
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71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds
78.60.-b Other luminescence and radiative recombination

Oriented ferroelectric La‐Sr‐Co‐O/Pb‐La‐Zr‐Ti‐O/La‐Sr‐Co‐O heterostructures on [001] Pt/SiO2 Si substrates using a bismuth titanate template layer

R. Ramesh, J. Lee, T. Sands, V. G. Keramidas, and O. Auciello

Appl. Phys. Lett. 64, 2511 (1994); http://dx.doi.org/10.1063/1.111557 (3 pages) | Cited 90 times

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We demonstrate the growth of c‐axis oriented La‐Sr‐Co‐O/Pb‐La‐Zr‐Ti‐O/La‐Sr‐Co‐O ferroelectric capacitor heterostructures on a highly [001] oriented Pt film which was grown on a thermally oxidized Si (SiO2/Si) substrate. The [001] growth orientation in the Pt film is induced by depositing it on a thin c‐axis oriented bismuth titanate template layer which is previously grown on the SiO2/Si substrate. The test capacitors show saturation and remnant polarization values comparable with that obtained on single‐crystal LaAlO3 substrates. The use of a Pt layer reduces the sheet resistance of the bottom electrode stack by at least 3–5 times. Since the Pt layer is strongly [001] oriented, it favors the growth of [001] La‐Sr‐Co‐O (LSCO) and lead zirconate titanate layers. The use of the LSCO top and bottom electrodes in contact with the ferroelectric thin film provides the resistance to bipolar fatigue, consistent with our earlier results.
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73.40.-c Electronic transport in interface structures
77.80.-e Ferroelectricity and antiferroelectricity
73.50.-h Electronic transport phenomena in thin films

Low‐field hole mobility of strained Si on (100) Si1−xGex substrate

Deepak K. Nayak and Sang Kook Chun

Appl. Phys. Lett. 64, 2514 (1994); http://dx.doi.org/10.1063/1.111558 (3 pages) | Cited 36 times

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Strain Hamiltonian and k⋅p theory are employed to calculate low‐field hole mobility of strained Si layers on (100)Si1−xGex substrate. Nonparabolicity and the warped nature of the valence bands are included. At room temperature, in‐plane hole mobilities of strained Si are found to be 1103 and 2747 cm 2 V−1 s−1 for x equal to 0.1 and 0.2, respectively. These hole mobilities are, respectively, 2.4 and 6 times higher than that of bulk Si. This improvement in the mobility results is mainly due to the large splitting energy between the occupied light‐hole band and the empty heavy‐hole band and smaller effective mass. The effect of p‐type doping on mobility is also presented.
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73.50.Dn Low-field transport and mobility; piezoresistance
73.61.Cw Elemental semiconductors

Two‐dimensional arsenic precipitation by In delta doping during low temperature molecular beam epitaxy growth of GaAs or AlGaAs

T. M. Cheng, C. Y. Chang, Albert Chin, M. F. Huang, and J. H. Huang

Appl. Phys. Lett. 64, 2517 (1994); http://dx.doi.org/10.1063/1.111559 (3 pages) | Cited 27 times

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Low temperature (LT) GaAs delta doped with In and Al have been grown by molecular beam epitaxy and annealed at 600–900 °C for 10 min. As precipitates have been observed to form preferentially on In doping planes while depleting on the Al planes. Similar As precipitates in In‐doped LT‐Al0.25Ga0.75As are 50% more efficient than that of GaAs. The accumulation or depletion of As precipitates in two‐dimensional planes in LT materials using isoelectronic impurities show that the phenomena is not directly related to the electronic properties of dopant impurities and therefore has many device applications.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
64.75.-g Phase equilibria
66.30.Lw Diffusion of other defects

In‐plane effective masses and quantum scattering times of electrons in narrow modulation‐doped InGaAs/InP quantum wells

U. Wiesner, J. Pillath, W. Bauhofer, A. Kohl, A. Mesquida Küsters, S. Brittner, and K. Heime

Appl. Phys. Lett. 64, 2520 (1994); http://dx.doi.org/10.1063/1.111560 (3 pages) | Cited 14 times

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In‐plane effective masses m∗∥ and quantum scattering times are derived from temperature‐dependent Shubnikov–de Haas oscillations measured on a series of modulation‐doped InxGa1−xAs/InP quantum wells with x=0.53 and 0.75, and for well widths ranging from 3 to 7 nm. The values for m∗∥ are consistently higher by 30%–70% than the respective bulk data. This result is in good agreement with recent theoretical calculations which predict an increase of m∗∥ with decreasing well width. The scatter of the mass values for nominally identical quantum wells is assumed to reflect corresponding variations of the well widths. The ratio of quantum to classical scattering times and the carrier density dependence of the electron mobilities indicate that Coulomb scattering is important even in extremely narrow quantum wells.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.50.Dn Low-field transport and mobility; piezoresistance

High‐frequency capacitances in resonant interband tunneling diodes

K. Fobelets, R. Vounckx, J. Genoe, G. Borghs, H. Grönqvist, and L. Lundgren

Appl. Phys. Lett. 64, 2523 (1994); http://dx.doi.org/10.1063/1.111561 (3 pages) | Cited 6 times

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The junction capacitance in resonant interband tunneling diodes is determined using microwave impedance measurements from 40 MHz to 62 GHz and network parameter extraction. The shape of the capacitance in the positive differential resistance region is totally different from the resonant tunneling diode. The difference can be explained by the intrinsic transport process of carriers in a resonant interband tunneling diode, what is manifested in the conductance characteristic of the device.
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73.40.Gk Tunneling
73.61.Ey III-V semiconductors
72.30.+q High-frequency effects; plasma effects
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Interfacial stages of the ZnTe/GaAs strained heterostructures grown by temperature‐gradient vapor transport deposition at low temperature

T. W. Kim, H. L. Park, and J. Y. Lee

Appl. Phys. Lett. 64, 2526 (1994); http://dx.doi.org/10.1063/1.111562 (3 pages) | Cited 11 times

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A lattice‐mismatched ZnTe epilayer on a GaAs (100) substrate was grown by the simple method of temperature‐gradient vapor deposition. From the x‐ray diffraction analysis, the grown layers were found to be ZnTe epitaxial films. The stoichiometry of the ZnTe films was investigated by Auger electron spectroscopy. Transmission electron microscopy measurements showed that there was a large lattice mismatch between the ZnTe epitaxial layer and the GaAs substrate. These results indicate that ZnTe epitaxial films grown on GaAs substrates at 320 °C have no significant interdiffusion problems, and that pseudomorphic, fully strained ZnTe layers are observed for deposits after ten molecular layers.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Quantized conductance and electron focusing spectra of GaAs/AlGaAs point contacts fabricated by optical lithography

J. R. Gao, B. J. van Wees, J. J. Kuipers, J. P. Heida, and T. M. Klapwijk

Appl. Phys. Lett. 64, 2529 (1994); http://dx.doi.org/10.1063/1.111563 (3 pages) | Cited 3 times

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Split gate quantum point contacts on a two‐dimensional electron gas (2DEG) of GaAs/AlGaAs heterostructures are fabricated using conventional optical lithography. The typical opening of the split gates ranges from 0.25 to 0.5 μm. Applying negative voltages to the gate introduces horn‐shaped constrictions. In a double point contact device, the point contact conductances are measured as a function of gate voltage, and transverse electron focusing is studied using one point contact to inject electrons ballistically into the 2DEG and the other to collect the electrons. Clear quantized conductance steps in units of 2e2/h are found at temperatures between 0.1 and 2 K. Also, electron focusing spectra are obtained for various point contact widths and some features are characterized by the geometry of the split gate.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Cg Contact resistance, contact potential
85.30.Hi Surface barrier, boundary, and point contact devices
85.40.Hp Lithography, masks and pattern transfer

Doping of polycrystalline diamond by boron ion implantation

R. Kalish, C. Uzan‐Saguy, A. Samoiloff, R. Locher, and P. Koidl

Appl. Phys. Lett. 64, 2532 (1994); http://dx.doi.org/10.1063/1.111564 (3 pages) | Cited 13 times

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Polycrystalline diamond films, heavily implanted with boron ions (2×1016 cm−2, 60 keV) are found to exhibit, following annealing and graphite removal, electrical properties similar to those obtained for chemical vapor deposited diamond, heavily doped with B during film growth. Control experiments in which carbon ions were implanted and annealed under identical conditions did not show any significant electrical conductivity, verifying that the measured effects are caused by chemical doping due to the presence of B. It is therefore concluded that doping of polycrystalline diamond by ion implantation is possible and graphitization along grain boundaries, that one might have expected to occur as a result of implantation and annealing, does not seem to severely affect the electrical properties of the implantation‐doped material.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.61.Cw Elemental semiconductors
72.80.Cw Elemental semiconductors

Quantum ballistic channel as an ultrahigh frequency generator

L. Fedichkin and V. V’yurkov

Appl. Phys. Lett. 64, 2535 (1994); http://dx.doi.org/10.1063/1.111565 (2 pages) | Cited 4 times

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A novel application of a quantum ballistic channel as an ultrahigh frequency oscillator is proposed. The generation frequency is about a reciprocal transit time of an electron across the channel. It achieves 1 THz for channel length about 0.2 μm. The most attractive feature of a quantum ballistic channel is that it can be easily integrated into traditional microelectronic waveguides.
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84.30.Ng Oscillators, pulse generators, and function generators
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
85.30.Pq Bipolar transistors

Red photoluminescence and optical absorption in hydrogen‐treated GeO2‐SiO2 sol‐gel‐derived planar waveguides

K. D. Simmons, B. G. Potter, and G. I. Stegeman

Appl. Phys. Lett. 64, 2537 (1994); http://dx.doi.org/10.1063/1.111566 (3 pages) | Cited 6 times

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We report the effects of post‐deposition, reducing atmosphere heat treatment on the optical absorption, and photoluminescence response of 45 GeO2‐55 SiO2 thin films produced using the sol‐gel process. With increasing heat treatment, a linear increase in the 242 nm absorption peak (associated with oxygen‐deficient germania centers) is found to contrast a reduction in the intensity of red photoluminescence (attributed to hydrogen centers in the glass structure). These results are discussed in terms of the photosensitive response of these materials.
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78.66.Jg Amorphous semiconductors; glasses
78.55.Hx Other solid inorganic materials

Electrical and optical properties of oxygen‐ion hot‐implanted GaAs layers

Hajime Yamazaki and Kazuo Watanabe

Appl. Phys. Lett. 64, 2540 (1994); http://dx.doi.org/10.1063/1.111567 (3 pages) | Cited 3 times

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Oxygen‐ion hot implantation into undoped GaAs has been investigated as fundamental research for the purpose of fabricating highly resistive isolation regions at lower temperatures. Hot implantation at 300 °C at an energy of 170 keV and a dose of 1×1015 cm−2 results in a sheet resistivity of 4×106 Ω/☒ without post‐implant annealing and 7.7×106 Ω/☒ after annealing at 400 °C for 10 min. These values are about one order of magnitude higher than those obtained after implantation at the same energy and dose done at room temperature. This high resistivity of the hot‐implanted layers is caused by both the removal of hopping conduction with an activation energy of 0.06 eV and the formation of 0.24–0.27 eV deep‐level electron traps. The effective reduction in implantation damage resulting from hot implantation, which induces the removal of hopping conduction, is confirmed by laser Raman spectroscopy.
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73.61.Ey III-V semiconductors
78.66.Fd III-V semiconductors
78.30.Fs III-V and II-VI semiconductors
71.55.Eq III-V semiconductors
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