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9 May 1994

Volume 64, Issue 19, pp. 2471-2607

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Anisotropy, birefringence, and optical phase retardation related to intersubband transitions in multiple quantum well structures

D. Kaufman, A. Sa’ar, and N. Kuze

Appl. Phys. Lett. 64, 2543 (1994); http://dx.doi.org/10.1063/1.111568 (3 pages) | Cited 7 times

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It is well known that the selection rules for intersubband transitions in quantum well structures require that the infrared light be polarized parallel to the growth direction. As a result, the induced intersubband susceptibility tensor becomes highly anisotropic and the crystal becomes birefringent. We have studied the effect of induced birefringence at the midinfrared range of the spectrum using a number of experimental techniques, including Fourier transform infrared absorption spectroscopy and optical phase retardation measurements using a tunable CO2 laser and a cross polarizer setup. We have observed that linearly polarized light becomes almost circularly polarized due to optical phase retardation between the ordinary and the extraordinary directions over a short optical path length of the order of 20 μm near the resonance (but not at the resonance). The real and the imaginary parts of the induced extraordinary refractive index were measured and have been found to be of the same order of magnitude. We also show that a solution of the Fresnel equation, modified to take into account both the imaginary and the real parts of the susceptibility tensor, is in good agreement with our experimental results.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
42.65.An Optical susceptibility, hyperpolarizability

High photon conversion in a light transducer combining organic electroluminescent diode with photoresponsive organic pigment film

Tadashi Katsume, Masahiro Hiramoto, and Masaaki Yokoyama

Appl. Phys. Lett. 64, 2546 (1994); http://dx.doi.org/10.1063/1.111569 (3 pages) | Cited 7 times

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An all‐organic light transducer based on a hybridization of an organic electroluminescent diode and a perylene pigment film as an electron photoinjecting electrode has been successfully designed. The quantum efficiency of photon conversion from red to red light reached 40% with the assistance of effective electron photoinjection due to large photocurrent multiplication in a photoresponsive perylene film.
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73.50.Pz Photoconduction and photovoltaic effects
78.66.Qn Polymers; organic compounds
85.60.Jb Light-emitting devices
85.60.-q Optoelectronic devices

Improved thermal conductivity in isotopically enriched chemical vapor deposited diamond

J. E. Graebner, T. M. Hartnett, and R. P. Miller

Appl. Phys. Lett. 64, 2549 (1994); http://dx.doi.org/10.1063/1.111570 (3 pages) | Cited 13 times

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The thermal conductivity κ of an isotopically enriched (0.055% 13C) polycrystalline diamond plate made by chemical vapor deposition (CVD) has been measured for heat flowing in a direction either parallel (κ∥) or perpendicular (κ⊥) to the plane of the plate. The room‐temperature conductivities (κ∥=21.8 and κ⊥=26 W cm−1 K−1) are higher than for any CVD diamond previously reported, and the κ⊥ value is higher than the best gem‐quality single crystal with the natural abundance (1.1%) of 13C. Analysis of the temperature dependence of κ∥ reveals that the point‐defect scattering of phonons is in fact significantly lower than expected for the natural abundance of 13C and that it is responsible for the improved conductivity. The observed anisotropy κ∥/κ⊥=0.84 at room temperature is associated with the anisotropic grain structure.
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72.80.Cw Elemental semiconductors
73.61.Cw Elemental semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Modulation of one‐dimensional electron density in n‐AlGaAs/GaAs edge quantum wire transistor

Y. Nakamura, M. Tsuchiya, S. Koshiba, H. Noge, and H. Sakaki

Appl. Phys. Lett. 64, 2552 (1994); http://dx.doi.org/10.1063/1.111571 (3 pages) | Cited 12 times

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An array of AlGaAs/GaAs edge quantum wires (EQWIs) with an effective width of 80 nm was successfully prepared on a (111)B microfacet structure on a patterned substrate by molecular beam epitaxy. By forming a gate electrode on the wires, field effect transistor action has been successfully demonstrated. The conductance of the wire measured in magnetic fields has exhibited a clear Shubnikov–de Haas (SdH) oscillation, and its Landau plot shows a characteristic nonlinearity caused by the magnetic depopulation of one‐dimensional (1D) subbands. It has been found that as the gate voltage decreases, the SdH peaks shift systematically toward lower magnetic fields, indicating a successful modulation of 1D electron density in the EQWI.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
72.80.Ey III-V and II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Formation of luminescent silicon by laser annealing of a‐Si:H

K. M. A. El‐Kader, J. Oswald, J. Kočka, and V. Cháb

Appl. Phys. Lett. 64, 2555 (1994); http://dx.doi.org/10.1063/1.111572 (2 pages) | Cited 10 times

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We report the preparation of luminescent Si by laser annealing of amorphous hydrogenated silicon (a‐Si:H) deposited on a silica substrate by glow‐discharge deposition. For this process, we have used XeCl excimer laser pulses with an energy density in the range of 0.3–0.7 J/cm2. While no visible photoluminescence (PL) has been observed at room temperature from the unirradiated a‐Si:H the PL comparable to the PL spectra of porous Si occurs in the irradiated part. The electron microscope studies reveal a microstructure which is a function of the pulse number and the pulse energy density.
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78.55.Hx Other solid inorganic materials
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Nonalloyed ohmic contacts on GaN using InN/GaN short‐period superlattices

M. E. Lin, F. Y. Huang, and H. Morkoç

Appl. Phys. Lett. 64, 2557 (1994); http://dx.doi.org/10.1063/1.111573 (3 pages) | Cited 32 times

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It is well known that ohmic contacts on GaN, a highly promising material for electronic and optoelectronic devices with a wide band gap of about 3.4 eV, constitute a major obstacle to further development of devices based on this material. We demonstrated a novel scheme of nonalloyed ohmic contacts on GaN using a short‐period superlattice (SPS), composed of GaN and narrow band‐gap InN, sandwiched between the GaN channel and an InN cap layer. Comparison with a similar layer without the SPS structure indicates that quantum tunneling through the SPS conduction band effectively reduces the potential barrier formed by the InN/GaN heterostructure leading to low contact resistivities. From the transmission‐line‐method measurements, specific contact resistances as low as 6×10−5 Ω cm2 with GaN doped at about 5×1018 cm−3 have been obtained without any post‐annealing. Theoretical estimation based on the SPS tunneling model is consistent with the experiment.
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73.40.Cg Contact resistance, contact potential
73.61.Ey III-V semiconductors

Maskless patterning of indium tin oxide layer for flat panel displays by diode‐pumped Nd:YLF laser irradiation

M. Takai, D. Bollmann, and K. Haberger

Appl. Phys. Lett. 64, 2560 (1994); http://dx.doi.org/10.1063/1.111980 (3 pages) | Cited 20 times

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An indium tin oxide (ITO) layer on a lime glass substrate for flat panel displays has been patterned without a mask by scanning Nd:YLF (neodymium‐doped yttrium‐lithium‐fluoride) laser irradiation in a pulsed mode. Both fundamental and frequency doubled lines of 1.047 μm and 523.5 nm were compared for processing. SEM (scanning electron microscopy) and surface stylus observation revealed that only the top ITO layer could be removed without substrate etching. A finer patterning was possible for irradiation of a 523.5 nm line because of the better focusing feature, though higher laser energy density was required for this line than for a 1.047 μm line because of the lower light absorption.
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81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments
85.40.Hp Lithography, masks and pattern transfer
81.40.Tv Optical and dielectric properties related to treatment conditions

Zero‐dimensional states in macroscopic resonant tunneling devices

J. W. Sakai, P. C. Main, P. H. Beton, N. La Scala, A. K. Geim, L. Eaves, and M. Henini

Appl. Phys. Lett. 64, 2563 (1994); http://dx.doi.org/10.1063/1.111574 (3 pages) | Cited 22 times

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We demonstrate that it is possible to observe transport through individual tunneling channels due to zero‐dimensional states in large area resonant tunneling devices (RTD). These localized states are found to be related to the presence of donor impurities in the vicinity of the quantum well but their binding energies are larger than that due to a single isolated hydrogenic donor. The states give rise to additional peaks in current voltage below the threshold for the main resonant peak. These peaks are visible in RTD with essentially any lateral dimension provided the current is measured with sufficient sensitivity.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Field effect in weakly compensated Si under condition of impurity conduction

A. S. Vedeneev, A. G. Gaivoronskii, A. G. Zhdan, V. V. Rylkov, Yu. Ya. Tkach, and A. Modelli

Appl. Phys. Lett. 64, 2566 (1994); http://dx.doi.org/10.1063/1.111575 (3 pages) | Cited 4 times

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Peculiarities of electron transport in a thin (0.5 μm) Si:B layer of p‐channel depletion‐type metal‐oxide‐semiconductor transistors with a high doping level (NA≂1018 cm−3) and a low compensation degree (K≂10−3) are described. These peculiarities manifest themselves in the helium temperature range as an increase and successive saturation of the impurity‐band conductance when the negative charge near the Si surface is increased by applying positive gate voltages. A model is suggested which explains the conduction enhancement as a result of the appearance of an additional channel for hopping in the transition region which divides completely ionized and neutral acceptors. The estimated hopping activation energy is in agreement with the experimental results.  
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72.20.Dp General theory, scattering mechanisms
72.80.Cw Elemental semiconductors

Nonlinear electron dynamics in a resonant tunneling diode: Langevin‐quantum‐dynamics simulations on a massively parallel computer

Aiichiro Nakano, Rajiv K. Kalia, and Priya Vashishta

Appl. Phys. Lett. 64, 2569 (1994); http://dx.doi.org/10.1063/1.111550 (3 pages) | Cited 5 times

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A quantum‐dynamics (QD) simulation scheme is developed to study highly nonlinear electron dynamics far from equilibrium. The time‐dependent density functional theory is combined with the Langevin equation to incorporate quantum effects, electron‐electron interaction, and dissipation. We perform QD simulations on a massively parallel computer to study the many‐electron dynamics in a resonant tunneling diode. The dynamic response of electrons in n+‐doped layers on the femtosecond scale is found to have a profound influence on the current‐voltage (I‐V) characteristic. The resulting time‐averaged I‐V characteristics are in excellent agreement with experiments.
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73.40.Gk Tunneling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.10.Di Scattering by phonons, magnons, and other nonlocalized excitations

Arsenic pressure dependence of first‐order phase transition on InAs (001) surface

Hiroshi Yamaguchi and Yoshiji Horikoshi

Appl. Phys. Lett. 64, 2572 (1994); http://dx.doi.org/10.1063/1.111529 (3 pages) | Cited 3 times

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The role of As pressure in the first‐order phase transition between As‐covered (2×4) and In‐covered (4×2) structures on InAs (001) surfaces is investigated using reflection high‐energy electron diffraction. The dependence of transition temperatures on As pressure is well explained by Monte Carlo simulation with a two‐dimensional lattice gas model, and the interaction energy is quantitatively obtained. The influence of metastability on As desorption is also clarified by comparing the experiments and simulations.
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68.35.Rh Phase transitions and critical phenomena
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds

Positive charging of buried SiO2 by hydrogenation

K. Vanheusden and A. Stesmans

Appl. Phys. Lett. 64, 2575 (1994); http://dx.doi.org/10.1063/1.111530 (3 pages) | Cited 17 times

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Simple hydrogen annealing of the buried oxide (BOX) of state‐of‐the‐art separation by implanted oxygen material in the range 450–700 °C was found to introduce net positive charge in the BOX with areal densities up to 5×1012 elem. charges cm−2, while H2 annealing in the range 700–1000 °C was observed to activate a neutral state. Both processes appeared reversible upon appropriate vacuum annealing. The positive charge in the BOX is detected using electron spin resonance of a positive BOX‐charge‐induced signal in Si. The results are interpreted in terms of a two‐state model which describes the trapping of hydrogen at a reactive site yielding an either positively charged (activation temperature TA≊450 °C) or neutral (TA≊715 °C) state, based on hydrogen incorporation into oxygen vacancies (Si—Si bonds).
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
76.30.Da Ions and impurities: general
81.65.-b Surface treatments

Surface structure of (NH4)2Sx‐treated GaAs (100) in an atomic resolution

Naoki Yokoi, Hiroya Andoh, and Mikio Takai

Appl. Phys. Lett. 64, 2578 (1994); http://dx.doi.org/10.1063/1.111531 (3 pages) | Cited 12 times

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The three‐dimensional structure of a GaAs (100) surface, treated in a (NH4)2Sx solution and annealed at 200 °C, was studied in an atomic scale by x‐ray photoemission spectroscopy (XPS), high‐resolution Rutherford backscattering spectroscopy (RBS), and scanning tunneling microscopy (STM). XPS spectra showed that S termination could suppress oxidization of the surface in the air and that S atoms on a GaAs surface bonded As atoms. The disorder of atomic sites in the surface region of a S‐terminated GaAs was found by RBS channeling spectra to be smaller than that of an untreated sample. The thickness of the sulfur layer on GaAs was found to be about 1.5 monolayers from RBS measurement. STM observation of the S‐terminated surface revealed a 1×1 lateral structure of the sulfur layer on the GaAs (100) surface.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
79.60.Bm Clean metal, semiconductor, and insulator surfaces

Surface study of YBa2Cu3O7−δ epitaxial films cleaned by an atomic oxygen beam

N. Terada, C. H. Ahn, D. Lew, Y. Suzuki, K. E. Kihlstrom, K. B. Do, S. B. Arnason, T. H. Geballe, R. H. Hammond, and M. R. Beasley

Appl. Phys. Lett. 64, 2581 (1994); http://dx.doi.org/10.1063/1.111532 (3 pages) | Cited 6 times

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An atomic oxygen beam generated by a microwave plasma source has been used to clean the surface of high‐Tc superconducting a‐ and c‐axis oriented YBa2Cu3O7−δ (YBCO) epitaxial thin films. The crystallinity and electronic structure of the cleaned films have been characterized in situ using reflection high energy electron diffraction, low energy electron diffraction (LEED), and ultraviolet and x‐ray photoemission spectroscopies (UPS, XPS). Exposure of the surface at 350 °C to the atomic oxygen beam yields sharp LEED spots and a metallic feature at the Fermi level. For a‐axis films, clear LEED patterns and a Fermi edge in UPS spectra of a recleaned surface are simultaneously observed. The contact resistance between a cleaned a‐axis YBCO film and in situ deposited gold was found to be in the range of 10−10–10−9 Ω cm2.
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74.78.-w Superconducting films and low-dimensional structures
74.72.-h Cuprate superconductors
73.20.At Surface states, band structure, electron density of states

YBa2Cu3O7 direct current–superconducting quantum interference devices with artificial PrBa2Cu3O7 barriers above 77 K

M. Schilling, D. Reimer, and U. Merkt

Appl. Phys. Lett. 64, 2584 (1994); http://dx.doi.org/10.1063/1.111533 (3 pages) | Cited 7 times

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Direct current–superconducting quantum interference devices (dc‐SQUIDs) from YBa2Cu3O7 with PrBa2Cu3O7 barriers and insulating MgO layers that modulate up to a temperature of 85 K are prepared by laser deposition with a KrF excimer laser and an ex situ patterning process. In order to utilize the longer coherence length of c‐axis oriented YBa2Cu3O7 films in the a‐b plane, an edge geometry is used for the definition of the Josephson junctions. By the variation of the barrier thickness the critical current of the junctions can be controlled within close limits and can be chosen for optimum dc‐SQUID performance at a given working temperature. At 80 K we find a flux‐voltage modulation of 3.4 μV.
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85.25.Dq Superconducting quantum interference devices (SQUIDs)
74.50.+r Tunneling phenomena; Josephson effects

Mutual phase locking of two high‐Tc Josephson junctions from 0.2 to 1 THz

J. Edstam and H. K. Olsson

Appl. Phys. Lett. 64, 2587 (1994); http://dx.doi.org/10.1063/1.111534 (3 pages) | Cited 8 times

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We have demonstrated mutual phase locking of two YBa2Cu3O7 Josephson junction oscillators in the frequency range from 0.2 to 1 THz. A maximum power of 0.2 μW was delivered to a distributed 8 Ω load at 0.7 THz. The corresponding dc locking current, ‖IL‖, was 43 μA. A maximum locking current of 75 μA at 0.44 THz or 7% of the critical current agrees well with a calculated maximum value of 6% for this circuit. The excellent high frequency operation is due to the use of a lumped microstrip circuit and a high characteristic voltage of the grain boundary junctions (1.7 mV at 4 K). This circuit was continuously tunable for all frequencies and was operated from 4 to 60 K.
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74.50.+r Tunneling phenomena; Josephson effects
85.25.Cp Josephson devices
85.25.Dq Superconducting quantum interference devices (SQUIDs)
74.72.-h Cuprate superconductors

Large magnetoresistance with low saturation fields in magnetic/magnetic superlattices

J. M. Gallego, D. Lederman, T. J. Moran, and Ivan K. Schuller

Appl. Phys. Lett. 64, 2590 (1994); http://dx.doi.org/10.1063/1.111535 (3 pages) | Cited 16 times

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Ni/Co multilayers grown by molecular beam epitaxy are found to exhibit a magnetoresistance ΔR/R at liquid helium temperature as large as 8.2%, with saturation fields ΔH≊22 Oe and a sensitivity (ΔR/R)/(2ΔH)≊0.19% Oe−1. The highest room temperature sensitivity obtained to date in this system is 0.18% Oe−1 and at 4.2 K is 0.29% Oe−1. This demonstrates that high values of the sensitivity can be achieved in multilayers in which both components are ferromagnetic. The magnetoresistance and saturation field can be tuned by the superlattice and growth parameters.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
72.15.Gd Galvanomagnetic and other magnetotransport effects
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)

Giant surface magnetostriction in polycrystalline Ni and NiFe films

O. Song, C. A. Ballentine, and R. C. O’Handley

Appl. Phys. Lett. 64, 2593 (1994); http://dx.doi.org/10.1063/1.111536 (3 pages) | Cited 61 times

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We have measured the effective magnetoelastic coupling coefficients, Beff, of polycrystalline NiFe/Ag/Si, NiFe/Cu/Si, and Ni/SiO2/Si films in situ as functions of magnetic layer thickness over the range from 1.5 to 50 nm using magneto‐optic Kerr effect and applied static strain. The Beff’s agree well with bulk values at large thicknesses but take on anomalously large values for thicknesses below about 5 nm. The data are well fit by a Néel model, Beff=Bbulk+Bsurf/(t−t0), where t0 may be related to intermixing at the interface with the substrate (verified by Auger depth profiling). These data suggest that the surface conditions are of enhanced importance in controlling magnetic properties, particularly anisotropy, permeability, and noise, even in films whose compositions are nominally of zero magnetostriction.
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75.80.+q Magnetomechanical effects, magnetostriction
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.70.Ak Magnetic properties of monolayers and thin films

Incidence of cavitation in the fragmentation process of extracorporeal shock wave lithotriptors

K. Rink, G. Delacrétaz, G. Pittomvils, R. Boving, and J. P. Lafaut

Appl. Phys. Lett. 64, 2596 (1994); http://dx.doi.org/10.1063/1.111537 (3 pages) | Cited 4 times

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The fragmentation mechanism occurring in extracorporeal shock wave lithotripsy (ESWL) is investigated using a fiber optic stress sensing technique. With our technique, we demonstrate that cavitation is a major cause of fragmentation in ESWL procedures. When a target is placed in the operating area of the lithotriptor, two shock waves are detected. The first detected shock wave corresponds to the incoming shock wave generated by the lithotriptor. The second shock wave, detected some hundreds of microseconds later, is generated in situ. It results from the collapse of a cavitation bubble, formed by the reflection of the incoming shock wave at the target boundary. This cavitation induced shock wave generates the largest stress in the target area according to our stress sensing measurements.
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62.50.-p High-pressure effects in solids and liquids
43.25.Yw Nonlinear acoustics of bubbly liquids
47.55.dp Cavitation and boiling
87.50.Y- Biological effects of acoustic and ultrasonic energy

Plume‐substrate interaction in pulsed‐laser deposition of high‐temperature superconducting thin films

Yoshiki Nakata, Wanniarachchi K. A. Kumuduni, Tatsuo Okada, and Mitsuo Maeda

Appl. Phys. Lett. 64, 2599 (1994); http://dx.doi.org/10.1063/1.111538 (3 pages) | Cited 13 times

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The interaction between a substrate and an expanding plume, which is produced in a pulsed‐laser deposition process of high‐temperature superconducting thin films, has been investigated by observing one‐dimensional laser‐induced fluorescence images of ablated yttrium oxide molecules. The results show the importance of fluid‐like interactions of the ablated particles with the substrate. In relatively high oxygen pressure, it is found that the ablated particles are reflected and stagnate in front of the substrate, and are then transported by diffusion onto the substrate.
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74.78.-w Superconducting films and low-dimensional structures
42.62.-b Laser applications
81.15.Fg Pulsed laser ablation deposition

Hall effect of metallic Langmuir–Blodgett films based on bisethylenedioxytetrathiafulvalene complex of decyltetracyanoquinodimethane

Mitsuru Takenaga, Aniwar Abdulla, Akinari Kasai, Akira Nakamura, Takayoshi Nakamura, Mutsuyoshi Matsumoto, Sachio Horiuchi, Hideki Yamochi, and Gunzi Saito

Appl. Phys. Lett. 64, 2602 (1994); http://dx.doi.org/10.1063/1.111539 (3 pages) | Cited 4 times

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The Hall effect of a metallic Langmuir–Blodgett film based on bisethylenedioxytetrathiafulvalene complex of decyltetracyanoquinodimethane has been investigated using a double ac Hall method. The polarity of the Hall coefficient is positive over the measuring temperature range. The carrier density is of the order of 1021 cm−3, almost independent of temperature, and the Hall mobility, of around 0.05 cm2 (V s)−1 at room temperature, is in a single activated process. The Hall results have been interpreted with an inhomogeneous structure model, and support that metallic domains are developed throughout the whole sample.
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73.61.Ph Polymers; organic compounds
72.80.Le Polymers; organic compounds (including organic semiconductors)
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

Stress balance in soft porous media

J. Kirmanen, M. Kataja, and J. Timonen

Appl. Phys. Lett. 64, 2605 (1994); http://dx.doi.org/10.1063/1.111540 (3 pages) | Cited 4 times

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The applicability of Terzaghi’s principle of effective stress for soft porous media is assessed [K. Terzaghi, From Theory to Practice in Soil Mechanics (Wiley, New York, 1960)]. We present experimental results for highly compressible fibrous media showing cross deviation from Terzaghi’s principle and propose a phenomenological formula for a generalized effective stress under one‐dimensional static compression.
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47.56.+r Flows through porous media
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