We report the growth of epitaxial single‐crystal (0001) hcp‐Be on (111) Si substrates using molecular beam epitaxy. The Be is oriented with Be∥Si and Be∥Si. Crystalline quality improves with increasing deposition temperature T, where T=100, 200, 300, 400, and 500 °C for the results reported here. The films deposited at T≤300 °C are smooth while those deposited at T≥400 °C are rough. A superstructure was observed on the surface, probably √3×√3, R30°, for films grown at T=300 °C. These epitaxial beryllium films are of much better quality than those we previously reported on α‐Al2O3.