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16 May 1994

Volume 64, Issue 20, pp. 2619-2748

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Spectroscopy of the transient oscillations in a Nd3+‐doped fiber laser for the four‐level 4F3/2‐4I11/2 (1060 nm) and three‐level 4F3/2‐4I9/2 (900‐nm) transitions

O. G. Okhotnikov and J. R. Salcedo

Appl. Phys. Lett. 64, 2619 (1994); http://dx.doi.org/10.1063/1.111523 (3 pages) | Cited 8 times

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We performed spectroscopic measurements of the relaxation oscillations in a tunable Nd3+‐doped fiber laser for the four‐level (4F3/2‐4I11/2) and for the three‐level (4F3/2‐4I9/2) transitions. We observed that the relaxation oscillation frequency for the three‐level transition exhibited a strong wavelength dependence; in contrast, the relaxation oscillation frequency for the four‐level transition did not exhibit any wavelength dependence. A simple theory to explain this remarkable feature was developed, confirming that the wavelength dependence is related to the thermal laser level population, which is significant in three‐level systems but negligible in four‐level systems. This should be taken into account for a careful description of laser systems, and is also instrumental for predicting oscillator or amplifier performance.
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42.55.Wd Fiber lasers
42.70.Hj Laser materials
78.45.+h Stimulated emission

Decay dynamics of laser‐induced gratings in LiNbO3:Zn

Jiachun Deng, Jinke Wen, Zhongkang Wu, and Huafu Wang

Appl. Phys. Lett. 64, 2622 (1994); http://dx.doi.org/10.1063/1.111497 (3 pages) | Cited 4 times

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The light‐induced grating erasure technique has been used to measure the photorefractive properties of LiNbO3:Zn. The results show that the photoinduced hole carriers increase when Zn content exceeds the concentration threshold. The charge relocation rate at high Zn doping content increases significantly, while the concentration of the photoinduced charge carriers has no obvious change.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Optically stabilized diode laser using high‐contrast saturated absorption

C. J. Cuneo, Jeffery J. Maki, and D. H. McIntyre

Appl. Phys. Lett. 64, 2625 (1994); http://dx.doi.org/10.1063/1.111498 (3 pages) | Cited 3 times

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Doppler‐free saturation spectroscopy in an optically thick atomic vapor is used in an optical‐feedback stabilization system for a semiconductor diode laser. A portion of the 780 nm diode laser beam passes through a heated rubidium cell and is reflected back to the laser. The optical feedback causes the laser frequency to be stabilized to a hyperfine transition within the Rb D2 line. The linewidth of the laser is reduced by more than two orders of magnitude.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Nonlinear optical characterization of new thermoset hydrosilation polymers

W. M. Gibbons, R. P. Grasso, M. K. O’Brien, P. J. Shannon, and S. T. Sun

Appl. Phys. Lett. 64, 2628 (1994); http://dx.doi.org/10.1063/1.111499 (3 pages)

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The second harmonic generation thermal stability of a new class of thermoset matrix for nonlinear optical (NLO) polymers based on the hydrosilation reaction of tetramethylcyclotetrasiloxane with chromophores possessing reactive carbon‐carbon double bonds is presented. One such chromophore with double bonds of different reactivity toward hydrosilation that were covalently attached to two different sites on the NLO π system generated a nonlinear optical polymer with thermal stability in excess of 190 °C and a nonlinear optical coefficient of d31=3±1 pm/V.
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.70.Jk Polymers and organics
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Visible spectrum optical absorption in Te2 vapor

Russell J. De Young

Appl. Phys. Lett. 64, 2631 (1994); http://dx.doi.org/10.1063/1.111500 (3 pages)

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The absorption spectrum of Te2 vapor has been measured throughout the visible spectrum. The absorption cross section (A state) was determined to be 2.18×10−18 cm2. At wavelengths above 500 nm, absorption takes place from vibrational levels above the ground level, allowing more efficient absorption of visible (solar) spectrum light. From an absorption point of view, Te2 appears to be a good candidate for a direct solar‐pumped laser.  
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
33.70.-w Intensities and shapes of molecular spectral lines and bands

Stable single mode hybrid laser with high power and narrow linewidth

P. A. Morton, V. Mizrahi, T. Tanbun‐Ek, R. A. Logan, P. J. Lemaire, H. M. Presby, T. Erdogan, S. L. Woodward, J. E. Sipe, M. R. Phillips, A. M. Sergent, and K. W. Wecht

Appl. Phys. Lett. 64, 2634 (1994); http://dx.doi.org/10.1063/1.111475 (3 pages) | Cited 23 times

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We describe hybrid lasers combining a semiconductor gain section and fiber cavity with integrated chirped Bragg reflector. These devices have produced output powers of 27.5 mW in a narrow linewidth (400 KHz) stable single longitudinal mode. The use of a chirped reflector to stabilize the single mode output, and correct grating orientation are described. The laser output has a side‐mode suppression ratio of over 55 dB at 27.5 mW output, and relative intensity noise (RIN) below 160 dB/Hz.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Planar optical waveguides in Nd‐doped yttrium oxy‐orthosilicate

J. H. Sharp, M. J. Rodman, P. J. Chandler, and P. D. Townsend

Appl. Phys. Lett. 64, 2637 (1994); http://dx.doi.org/10.1063/1.111476 (3 pages) | Cited 2 times

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Planar waveguides have been fabricated in single‐crystal Nd‐doped yttrium oxy‐orthosilicate (Nd:Y2SiO5) using 2.0 MeV He+ ion implantation at doses of around 1016 ions/cm2. Refractive index profiles of the waveguides are presented. The losses were found to be lower for TE polarized modes with the minimum loss achieved to date being 0.71 dB/cm after annealing. Photoluminescence studies indicate that both the spectral line shape and the radiative lifetimes of the waveguides fully recover to bulk values after annealing.
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42.79.Gn Optical waveguides and couplers
42.55.Rz Doped-insulator lasers and other solid state lasers
78.55.Hx Other solid inorganic materials

Photorefractive wave mixing in undoped liquid encapsulated Czochralski GaAs at 1.5 μm: Validation of photorefractive modeling

P. Delaye, L. A. de Montmorillon, H. J. von Bardeleben, and G. Roosen

Appl. Phys. Lett. 64, 2640 (1994); http://dx.doi.org/10.1063/1.111477 (3 pages) | Cited 5 times

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We present photorefractive measurements in undoped GaAs performed at 1.06 μm, 1.32 μm, and at 1.55 μm. Using concentrations of EL20/+ that we determined through optical absorption and electron paramagnetic resonance measurements in the same sample, we show that a single defect model with an electron‐hole competition quantitatively explains our results of photorefractive wave mixing.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
71.55.Eq III-V semiconductors

Characterization of a microwave plasma jet containing Ar‐CH4 gas mixture

L. Thomas, J. L. Jauberteau, J. Aubreton, A. Catherinot, A. R. De Souza, and M. J. Cinelli

Appl. Phys. Lett. 64, 2643 (1994); http://dx.doi.org/10.1063/1.111478 (3 pages) | Cited 5 times

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This work is devoted to the study of the expansion of a Ar‐CH4 microwave plasma. Diagnostics have been performed within the reactor using both an electrostatic Langmuir double probe and spatially resolved emission spectroscopy. We have proven that the plasma jet results from electromagnetic surface wave propagation (ne≥nec=3.6×1011 cm−3, Te∼23 000–46 000 K) and have shown that injection of methane into the jet decreases ne and Te, and thus limits the striking conditions. Such an expanding plasma finds applications in plasma enhanced chemical vapor deposition technology. It can be used to create simple radicals close to a substrate and thus limits their destruction on the reactor walls.
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52.80.Pi High-frequency and RF discharges
52.50.Gj Plasma heating by particle beams
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Interstitial traps and diffusion in epitaxial silicon films

N. E. B. Cowern

Appl. Phys. Lett. 64, 2646 (1994); http://dx.doi.org/10.1063/1.111479 (3 pages) | Cited 34 times

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Oxidation‐enhanced diffusion in molecular beam epitaxially grown epitaxial silicon films decreases rapidly with depth due to trapping of injected interstitials at microscopic defects. Apparently inconsistent data on trapping kinetics, recently reported in the literature, are resolved by analyzing the time evolution of the interstitial distribution CI(x,t). The analysis enables characterization of trap size and trap concentration in the parts‐per‐billion range.
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66.30.J- Diffusion of impurities
66.30.Lw Diffusion of other defects
61.72.J- Point defects and defect clusters
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Thermodynamic effects in depth profiling and ion‐beam mixing without invoking thermal spikes

Roger Kelly and Antonio Miotello

Appl. Phys. Lett. 64, 2649 (1994); http://dx.doi.org/10.1063/1.111480 (3 pages) | Cited 22 times

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Various studies on ion‐beam mixing suggest that the extent of mixing is sensitive to the sign and magnitude of the heat of mixing, ΔHm. This implies a role, not only for random motion, but also for chemical driving forces of the type where the total diffusion flux is modified by the factor [1−αi(1−αi) 2hmp/RT(1+p)]. Here α1 is the atomic fraction of component i, αi(1−αi)hm is the heat of mixing of a regular solution, and p is the ratio of the diffusivities for chemically guided defect motion to those for random motion of all types. The parameter p has never been evaluated for any system and we wish to evaluate it first by analyzing the profiling experiments of Marton, Fine, and Chambers on multilayers of Ni‐Ag. We then obtain further values of p from ion‐beam mixing experiments on bilayers and multilayers. It is shown that it is possible to understand a variety of experimental results relating to profiling and to ion‐beam mixing in terms of chemical driving forces and, moreover, to do so without invoking thermal spikes.
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61.80.Jh Ion radiation effects
66.30.Lw Diffusion of other defects
61.85.+p Channeling phenomena (blocking, energy loss, etc.)

Change of surface structure of thin silicon nitride layers during electron beam rapid thermal annealing

A. Markwitz, H. Baumann, E. F. Krimmel, K. Bethge, and W. Grill

Appl. Phys. Lett. 64, 2652 (1994); http://dx.doi.org/10.1063/1.111481 (3 pages) | Cited 9 times

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The surface of 〈100〉 Si specimens implanted at room temperature (RT) with 15N+2 ions at 10 keV with fluences of 5×1016 at./cm2 was subsequently annealed by electron beam rapid thermal annealing (EB‐RTA) at temperatures between 900 and 1150 °C forming SiNx layers 25–20 nm thick. The modification in surface structure of these layers by EB‐RTA was investigated by atomic force microscopy (AFM) and nuclear reaction analysis (NRA). The 15N depth profile measurement [15N(p,αγ)12C] at target tilt angles from 30° to 7° indicates a shift of the low energy edge which represents the SiNx sample surface. This shift is attributed to the shadowing effect of the SiNx sample surface. Detailed AFM analysis shows that the surfaces are covered with irregularly distributed vertical structures, being whiskers of ∼16 nm height. These structures become more pronounced with increasing annealing temperatures.
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81.65.-b Surface treatments
61.80.Jh Ion radiation effects
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Self‐assembly of a homopolymer mixture via phase separation

Georg Krausch, Edward J. Kramer, Miriam H. Rafailovich, and Jonathan Sokolov

Appl. Phys. Lett. 64, 2655 (1994); http://dx.doi.org/10.1063/1.111482 (3 pages) | Cited 35 times

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We propose a mechanism for creating lateral order in thin films of a homopolymer mixture via spinodal decomposition in the presence of a laterally structured substrate surface. The system under consideration is a mixture of deuterated polystyrene and partially brominated polystyrene (PBrxS, x=0.5) spuncast onto different substrates from toluene solution. We demonstrate that periodic stripe‐like domain structures can be observed in the polymer films after spinodal decomposition on a periodic array of Cr lines on a H‐terminated Si surface. The effect vanishes when the chemistry of the underlying structure is changed, strongly indicating an interface‐driven ordering of the polymer film.
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61.41.+e Polymers, elastomers, and plastics
61.25.H- Macromolecular and polymers solutions; polymer melts
68.03.Cd Surface tension and related phenomena
64.75.-g Phase equilibria

Passivation of InGaAs/InP surface quantum wells by ion‐gun hydrogenation

Ying‐Lan Chang, I‐Hsing Tan, Casper Reaves, James Merz, Evelyn Hu, Steve DenBaars, A. Frova, V. Emiliani, and B. Bonanni

Appl. Phys. Lett. 64, 2658 (1994); http://dx.doi.org/10.1063/1.111483 (3 pages) | Cited 5 times

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We have investigated the optical properties of an InGaAs/InP surface quantum well before and after room‐temperature low‐energy ion‐gun hydrogenation. The luminescence efficiency of the surface quantum well was enhanced by up to two orders of magnitude after hydrogenation. Our experiments also reveal that the nonradiative recombination centers at the etched surface can be saturated by increasing excitation density for the photoluminescence measurement. To ‘‘unmask’’ the effects of the saturation of recombination sites, for a true comparison of passivation effects brought about by different surface treatments, an excitation density below 1 W/cm2 is required.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.20.At Surface states, band structure, electron density of states
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors

In situ monitoring of electron cyclotron resonance plasma processing of GaAs surfaces by optical reflection spectroscopy

L. M. Weegels, T. Saitoh, H. Oohashi, and H. Kanbe

Appl. Phys. Lett. 64, 2661 (1994); http://dx.doi.org/10.1063/1.111484 (3 pages) | Cited 7 times

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In situ reflection spectroscopy is demonstrated to be a useful technique for monitoring the damage to the surface of GaAs substrates induced by ions from an electron cyclotron plasma. Distinct differences in the reflectance spectra of GaAs substrates are observed between etching by argon ions and chemical cleaning by hydrogen ions. For argon it is found that the damage layer thickness increases linearly with the argon ion energy. Hydrogen ions induce a damage layer of 3.1 nm and arsenic atoms are preferentially removed from the surface as the ion energy increased.
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81.65.-b Surface treatments
61.80.Jh Ion radiation effects

Improved GaInAs/GaAs heterostructures by high growth rate molecular beam epitaxy

N. Grandjean, J. Massies, M. Leroux, J. Leymarie, A. Vasson, and A. M. Vasson

Appl. Phys. Lett. 64, 2664 (1994); http://dx.doi.org/10.1063/1.111485 (3 pages) | Cited 9 times

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This work shows that the critical thickness for the two‐dimensional–three‐dimensional growth mode transition during the growth of Ga0.65In0.35As on GaAs(001) can be significantly increased by increasing the growth rate. This experimental finding is corroborated by a Monte Carlo simulation of this heteroepitaxial growth. Improved quantum well optical properties are demonstrated.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
78.55.Cr III-V semiconductors

Growth of 2H‐SiC on 6H‐SiC by pulsed laser ablation

M. A. Stan, M. O. Patton, J. D. Warner, J. W. Yang, and J. W. Yang

Appl. Phys. Lett. 64, 2667 (1994); http://dx.doi.org/10.1063/1.111486 (3 pages) | Cited 13 times

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A 2H‐SiC thin film has been grown on a 6H‐SiC substrate by laser ablation using an excimer laser. The deposition of 2H‐SiC film occurred in a high vacuum system (≊10−6 Torr) with the substrate temperature near 1200 °C. Plan‐view and cross‐sectional transmission electron microscopy (TEM) were used to measure the lattice parameters and to identify the polytype. Cross‐sectional TEM images clearly show the symmetry of the film as c‐axis oriented 2H‐SiC containing columnar grains with an average diameter of 20 nm and a length of 100 nm.
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81.15.Fg Pulsed laser ablation deposition
68.55.-a Thin film structure and morphology

Deep level transient spectroscopy characterization of ferroelectric Pb(Zr,Ti)O3 thin films

P. F. Baude, C. Ye, and D. L. Polla

Appl. Phys. Lett. 64, 2670 (1994); http://dx.doi.org/10.1063/1.111487 (3 pages) | Cited 23 times

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Deep level transient spectroscopy (DLTS) has been used to investigate trap levels in sol‐gel derived polycrystalline Pb(Zr0.54,Ti0.46)O3 thin films. Metal‐ferroelectric‐metal capacitor structures 2400 and 3000 Å in thickness were fabricated and characterized using a constant voltage DLTS system. Prominent peaks associated with a single trap level were observed in all samples studied. The activation energy was determined to be 267 meV from DLTS spectra Arrhenius plots. Infrared transmission characterization was performed on PbTiO3 thin films also prepared using sol‐gel synthesis. A loss in the transmission at 270±12 meV was observed which we attribute to hole emission from the same trap detected using DLTS.
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71.55.Ht Other nonmetals
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Polycrystalline La0.5Sr0.5CoO3/PbZr0.53Ti0.47O3/ La0.5Sr0.5CoO3 ferroelectric capacitors on platinized silicon with no polarization fatigue

R. Dat, D. J. Lichtenwalner, O. Auciello, and A. I. Kingon

Appl. Phys. Lett. 64, 2673 (1994); http://dx.doi.org/10.1063/1.111488 (3 pages) | Cited 106 times

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Pulsed laser ablation‐deposition is used to produce fatigue‐free La0.5Sr0.5CoO3(LSC)/ PbZr0.53Ti0.47O3 (PZT)/LSC ferroelectric capacitors on oxidized (100) Si substrates coated with a bilayer of Pt/Ti. These capacitors utilize a unique bottom electrode combination of LSC on Pt, where the LSC (a conducting oxide) acts as a template to promote the ferroelectric perovskite phase of PZT and to minimize polarization fatigue, while Pt is used for its high electrical conductivity and high temperature stability. We have used the hybrid Pt/LSC electrode discussed in this letter to integrate PZT‐based capacitors with Si substrates. X‐ray diffraction analysis shows that the PZT film is polycrystalline and is entirely perovskite phase. Devices show no significant degradation of the switchable polarization after 3×1010 switching cycles. Aging tests show that the rate of loss of switchable polarization may allow useful memory retention for times up to 1010 s.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
81.15.Fg Pulsed laser ablation deposition

Structural properties and interfacial layer formation mechanisms of PbTiO3 thin films grown on p‐Si substrates

T. W. Kim, Y. S. Yoon, S. S. Yom, and Jeong Yong Lee

Appl. Phys. Lett. 64, 2676 (1994); http://dx.doi.org/10.1063/1.111489 (3 pages) | Cited 21 times

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Ferroelectric PbTiO3 thin films were grown on Si(100) substrates by metalorganic chemical vapor deposition via thermal pyrolysis at relatively low temperature (∼500 °C) using Pb(tmhd)2, Ti(OC3H7)4, and N2O. Transmission electron microscopy results suggested that the grown PbTiO3 films were polycrystalline layers. Auger depth profiles indicated that the compositions of the as‐grown films consisted of lead, titanium, and oxygen uniformly distributed throughout the films and that the films exhibited smooth interfaces. These results indicate that the growth of polycrystalline PbTiO3 layers instead of epitaxial films originated from the formation of an interfacial amorphous layer prior to the creation of the films. Further, a mechanism for the formation of an interfacial layer between the PbTiO3 thin films and the p‐Si substrates is presented.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
77.55.-g Dielectric thin films

Rhodium‐ and iridium‐related deep levels in In0.53Ga0.47As

B. Srocka, H. Scheffler, and D. Bimberg

Appl. Phys. Lett. 64, 2679 (1994); http://dx.doi.org/10.1063/1.111978 (3 pages) | Cited 5 times

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We investigated the doping of In0.53Ga0.47As with rhodium and iridium by liquid phase epitaxy and observed for the first time Rh‐ and Ir‐related levels in InGaAs by means of deep level transient spectroscopy. Both dopants were found to produce near‐midgap levels. The available data support an association of these levels with the transition metal (TM)2+/3+‐single acceptor transitions caused by substitutionally incorporated TM ions on cation sites. The distribution coefficients determined from the trap concentrations in the layers are rather small, on the order of 1×10−6.
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81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
71.55.Eq III-V semiconductors

Doping of zinc‐selenide‐telluride

W. Faschinger, S. Ferreira, and H. Sitter

Appl. Phys. Lett. 64, 2682 (1994); http://dx.doi.org/10.1063/1.111490 (3 pages) | Cited 30 times

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We investigate the doping behavior of ZnSe/ZnTe short period superlattices. p‐type doping is achieved with a dc nitrogen plasma source, n‐type doping with chlorine from a ZnCl2 Knudsen source. Even a small Te content has a strong positive effect on p doping: Doping levels in the upper 1019 cm−3 range are achieved, and ohmic contacts can be obtained even for low carrier concentrations. The data are in excellent agreement with a theory based on the amphoteric native defect model. The opposite is valid for n doping: At Te concentrations above 20% electron concentrations are below 1016 cm−3. As a possible way to get both good n‐ and p‐type doping at the same lattice constant we propose the use of the quaternary compound Zn(1−y)Mg(y)Se(1−x)Te(x).
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.uj III-V and II-VI semiconductors

GaAs‐InGaAs quantum‐well resonant‐tunneling switching device grown by molecular beam epitaxy

Wen‐Chau Liu, Der‐Feng Guo, Shiuh‐Ren Yih, Jing‐Tong Liang, Lih‐Wen Liah, and Gau‐Ming Lyuu

Appl. Phys. Lett. 64, 2685 (1994); http://dx.doi.org/10.1063/1.111491 (3 pages) | Cited 1 time

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In this letter, a new switching device having a p‐type delta‐doped sheet in the center of an InGaAs‐GaAs quantum well is presented. An N‐shaped negative‐differential‐resistance (NDR) phenomenon resulting from the resonant tunneling effect through the miniband under a proper anode‐to‐cathode voltage is observed. From the experimental results, it is seen that the temperature plays an important role in the device operation.
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73.40.Gk Tunneling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Spectroscopic ellipsometry determination of the properties of the thin underlying strained Si layer and the roughness at SiO2/Si interface

N. V. Nguyen, D. Chandler‐Horowitz, P. M. Amirtharaj, and J. G. Pellegrino

Appl. Phys. Lett. 64, 2688 (1994); http://dx.doi.org/10.1063/1.111492 (3 pages) | Cited 28 times

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The existence of both the strain and microroughness at the interface of thermally grown SiO2 films on Si was ascertained unambiguously for the first time by high accuracy spectroscopic ellipsometry. The dielectric function of the interface was determined by a comprehensive data analysis procedure. By carefully examining the dielectric function obtained by our model, the strain was seen to cause a red shift of 0.042 eV of the interband critical point E1 compared with the bulk silicon value. The thickness of the interface region was found to be 2.2 nm of which a significant part is due to the strain.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.55.-a Thin film structure and morphology
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Nonlinear‐transmission spectra of porous silicon: Manifestation of size quantization

V. I. Klimov, V. S. Dneprovskii, and V. A. Karavanskii

Appl. Phys. Lett. 64, 2691 (1994); http://dx.doi.org/10.1063/1.111493 (3 pages) | Cited 15 times

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Changes in the transmission of porous silicon layers induced by ultrashort laser pulses are studied by using picosecond pump and probe measurements. Bleaching bands attributed to the saturation of optical transitions in silicon wires or/and crystallites with nanometer dimensions are observed in time‐resolved differential transmission spectra. The measured nonlinearity is characterized by a relatively high value of the third‐order nonlinear susceptibility (≊10−8 esu) and by fast relaxation dynamics (transmission recovery time is 30–40 ps).
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78.47.-p Spectroscopy of solid state dynamics
78.55.Hx Other solid inorganic materials
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
42.65.Pc Optical bistability, multistability, and switching, including local field effects
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