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6 Jun 1994

Volume 64, Issue 23, pp. 3065-3191

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InGaAs/GaAs shallow quantum well optical switches grown by metalorganic vapor phase epitaxy

S. W. Lee, K. U. Chu, S. W. Kim, S. Park, O’D. Kwon, K. W. Goossen, and S. S. Pei

Appl. Phys. Lett. 64, 3065 (1994); http://dx.doi.org/10.1063/1.111348 (3 pages) | Cited 4 times

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Optical switches have been fabricated from InGaAs/GaAs shallow quantum well structures grown by metalorganic vapor phase epitaxy. The photocurrent spectra exhibited very sharp room‐temperature exciton peaks around 900 nm. Quantum well modulators consisting of such a shallow system showed contrast ratios larger than 2:1 and no sign of strain‐induced degradations. The epitaxial quality, however, had some interesting dependence on the choice of substrate dopant.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
78.66.Fd III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
42.79.Hp Optical processors, correlators, and modulators

Tunable quasi‐phase matching using dynamic ferroelectric domain gratings induced by photorefractive space‐charge fields

Anthony S. Kewitsch, Mordechai Segev, Amnon Yariv, Gregory J. Salamo, Terrence W. Towe, Edward J. Sharp, and Ratnakar R. Neurgaonkar

Appl. Phys. Lett. 64, 3068 (1994); http://dx.doi.org/10.1063/1.111349 (3 pages) | Cited 26 times

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We demonstrate a method of dynamic, tunable quasi‐phase matched second‐harmonic generation using optically induced polarization gratings with periods equal to twice the coherence length. These gratings increase the peak second‐harmonic conversion efficiency by a factor of 17 above a poled strontium barium niobate crystal, to 0.01% for fundamental beam intensities of 0.8 MW cm−2. We generate quasi‐phase matching spectral response peaks as narrow as 0.175 nm and tailor the response by writing an ensemble of gratings in the same volume, each of which enhances the second‐harmonic generation at a predetermined wavelength.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Laser‐induced breakdown by impact ionization in SiO2 with pulse widths from 7 ns to 150 fs

D. Du, X. Liu, G. Korn, J. Squier, and G. Mourou

Appl. Phys. Lett. 64, 3071 (1994); http://dx.doi.org/10.1063/1.111350 (3 pages) | Cited 255 times

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Results of laser‐induced breakdown experiments in fused silica (SiO2) employing 150 fs–7 ns, 780 nm laser pulses are reported. The avalanche ionization mechanism is found to dominate over the entire pulse‐width range. Fluence breakdown threshold does not follow the scaling of Fth∼ √τp, when pulses are shorter than 10 ps. The impact ionization coefficient of SiO2 is measured up to ∼3×108 V/cm. The relative role of photoionization in breakdown for ultrashort pulses is discussed.
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72.20.Ht High-field and nonlinear effects
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
77.22.Jp Dielectric breakdown and space-charge effects

Spectral noncritically phase‐matched near‐infrared generation by difference frequency mixing in lithium triborate

G. C. Bhar, P. K. Datta, A. M. Rudra, and U. Chatterjee

Appl. Phys. Lett. 64, 3074 (1994); http://dx.doi.org/10.1063/1.111351 (3 pages) | Cited 2 times

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Retracing behavior of phase matching has been observed in the generation of infrared radiation (1.25–1.85 μm) by both type‐I angle‐tuned and temperature‐tuned difference frequency mixing of a Nd:YAG laser (1064 nm) with its second‐harmonic pumped dye laser (570–675 nm) in lithium triborate crystal. Large spectral acceptance of 49 nm at spectral noncritical phase‐matching point and angular acceptance of 4.0° at angular noncritical phase‐matching point has been obtained.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques

Radiation from concentric‐circle grating, surface‐emitting planar waveguides: The volume current method

Rebecca H. Jordan and Dennis G. Hall

Appl. Phys. Lett. 64, 3077 (1994); http://dx.doi.org/10.1063/1.111352 (3 pages) | Cited 10 times

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This letter describes the volume current boundary perturbation method and uses this method to find the field radiated by a set of concentric rings located at the film‐cover interface of a three‐layer, planar optical waveguide. Waveguides with annular and full (extending from the origin) sets of circular gratings, and with both traveling and standing guided waves, are analyzed. The resulting analytical expression for the radiation field and far‐field intensity patterns are compared with results of the field‐expansion boundary perturbation method.
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42.82.Et Waveguides, couplers, and arrays
42.79.Gn Optical waveguides and couplers
42.55.Px Semiconductor lasers; laser diodes

Observation of nonhexagonal laser‐beam patterning in a thin liquid crystal cell in front of a single feedback mirror

E. Ciaramella, M. Tamburrini, and E. Santamato

Appl. Phys. Lett. 64, 3080 (1994); http://dx.doi.org/10.1063/1.111353 (3 pages) | Cited 2 times

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We present here the first experimental evidence of spontaneous laser filamentation with patterns other than hexagons, in a thin Kerr medium placed in front of a single backreflecting mirror. In particular, we observed hexagons‐to‐rolls transition and, by proper external seeding, generation of square‐like patterns.
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61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
64.70.M- Transitions in liquid crystals

Nonlinear excited state absorption in cadmium texaphyrin solution

Jinhai Si, Miao Yang, Yuxiao Wang, Lei Zhang, Chunfei Li, Duoyuan Wang, Shiming Dong, and Wenfang Sun

Appl. Phys. Lett. 64, 3083 (1994); http://dx.doi.org/10.1063/1.111354 (3 pages) | Cited 18 times

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Nonlinear absorption at 532 nm in a cadmium texaphyrin solution has been studied using 8 ns and 23 ps laser pulses. The experiments show that reverse saturable absorption occurs in the nanosecond case. For picosecond pulses, reverse saturable absorption occurs only at low fluences, and the transmission increases with increasing incident fluence at high fluences. A six‐level model is presented to explain these nonlinear absorption effects. Several photophysical parameters for cadmium texaphyrin, such as absorption cross sections at 532 nm and lifetimes, have been evaluated by theoretical simulations of the experimental results.
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42.70.Jk Polymers and organics
42.65.-k Nonlinear optics

100 W average power at 0.53 μm by external frequency conversion of an electro‐optically Q‐switched diode‐pumped power oscillator

S. P. Velsko, C. A. Ebbers, B. Comaskey, G. F. Albrecht, and S. C. Mitchell

Appl. Phys. Lett. 64, 3086 (1994); http://dx.doi.org/10.1063/1.111355 (3 pages) | Cited 5 times

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We have generated approximately 100 W of frequency doubled light from the output of an electro‐optically Q‐switched diode‐pumped Nd:YAG slab laser oscillator operating at an average power of 200 W (2.5 kHz repetition rate, 80 mJ/pulse, 30 ns pulsewidth). The Q‐switch was a compensated z‐axis propagation LiNbO3 electro‐optic modulator, and the frequency conversion crystal was a thin slab of KTP. In addition, Q‐switched operation at an average power of approximately 250 W with 26 ns pulsewidths has been demonstrated.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.55.Px Semiconductor lasers; laser diodes
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.-e Optical elements, devices, and systems

Tunable dual‐wavelength operation of a diode array with an external grating‐loaded cavity

Chi‐Luen Wang and Ci‐Ling Pan

Appl. Phys. Lett. 64, 3089 (1994); http://dx.doi.org/10.1063/1.111356 (3 pages) | Cited 21 times

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A novel grazing‐incidence grating cavity has been developed for simultaneous generation of laser output at two wavelengths. The gain section is a commercial laser diode array. By moving vertically with respect to the optical axis V‐shaped double slit at the end mirror, we demonstrate tuning of the spectral separation of the dual‐wavelength laser output from 3.52 to 11.29 nm. The side‐mode suppression ratio is 10–20 dB. Examination of the far‐field patterns reveal that the laser mode at the two wavelengths corresponds to a different order of the array modes.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Green and violet light generation in LiNbO3 optical superlattice through quasiphase matching

Ya‐lin Lu, Lun Mao, and Nai‐ben Ming

Appl. Phys. Lett. 64, 3092 (1994); http://dx.doi.org/10.1063/1.111357 (3 pages) | Cited 10 times

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Picosecond 531 nm green and 385 nm violet light generation through first‐order and third‐order quasiphase matching (QPM) has been performed in a LiNbO3 optical superlattice. The conversion efficiency is 11.4% and 1.6%, respectively. A comparison between theoretical analyses and experimental results of frequency doubling peak value and full width at half‐maximum for both the first‐ and third‐order QPM are given. Possible simultaneous generation of green and violet light in the crystal are predicted for constructing a compact two outputting wavelengths light source.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.66.-w Optical properties of specific thin films

Active mode locking of a diode laser by a resonant tunneling diode

E. Grumann, J. E. Golub, M. Matusovsky, and M. Rosenbluh

Appl. Phys. Lett. 64, 3095 (1994); http://dx.doi.org/10.1063/1.111358 (3 pages) | Cited 1 time

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We use an oscillating resonant tunneling diode as the driver of an external cavity diode laser to produce active mode locked light pulses in the picosecond range. We demonstrate dc voltage‐controlled uniform temporal positioning, or time shifting, or the laser pulses with reference to a synthesizer based reference signal. This may be very useful for picosecond time‐resolved applications.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
78.66.Fd III-V semiconductors

Novel in situ method to detect subnanometer‐sized particles in plasmas and its application to particles in helium‐diluted silane radio frequency plasmas

T. Fukuzawa, M. Shiratani, and Y. Watanabe

Appl. Phys. Lett. 64, 3098 (1994); http://dx.doi.org/10.1063/1.111359 (3 pages) | Cited 22 times

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A new Langmuir probe method is proposed to reveal processes of particulate nucleation and its subsequent early growth in silane radio frequency (rf) plasmas. In the method, subnanometer‐sized particles grown during the rf‐discharge‐on phase are detected as negative ions in the subsequent afterglow phase in which temperature and density of electrons have decayed. Preliminary experiments applying the method to helium‐diluted silane rf plasmas have the following features of particle growth: subnanometer‐sized particles are mainly generated around the plasma/sheath boundary near the rf electrode; they grow with increase in the rf‐discharge‐on period, Ton, for Ton≲a gas residence time of the discharge.
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81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
52.70.-m Plasma diagnostic techniques and instrumentation
52.80.Pi High-frequency and RF discharges
61.43.-j Disordered solids

Abnormal diffusion behavior of Yb+ and Er+ implanted in KTiOPO4

Ke‐Ming Wang, Pei‐Jun Ding, Wei Wang, W. A. Lanford, Yi Li, Ju‐Sheng Li, and Yao‐Gang Liu

Appl. Phys. Lett. 64, 3101 (1994); http://dx.doi.org/10.1063/1.111360 (3 pages) | Cited 1 time

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400 keV Yb+ and 300 keV Er+ were implanted into potassium titanyl phosphate (KTiOPO4 or KTP) with doses of 3×1015 and 1×1015 ions/cm2, respectively. The samples were annealed in the temperature range 600 to 800 °C in Ar ambient. The diffusion behaviors of implanted Yb+ and Er+ in KTiOPO4 were investigated by Rutherford backscattering of 2.0 MeV He ions. The results show that no obvious diffusion of Yb+ and Er+ in KTiOPO4 is detected at 600 °C annealing, but there are three and two peaks of implanted rare‐earth ion distribution after 800 °C annealing for the case of Yb+ and Er+, respectively. An explanation of these phenomena is suggested.
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66.30.J- Diffusion of impurities
68.35.Fx Diffusion; interface formation
61.72.uf Ge and Si
61.72.Cc Kinetics of defect formation and annealing

Thin films of the protonic conductor gadolinium‐doped barium cerate by solid‐source metalorganic chemical vapor deposition

N. Jiang, R. M. Buchanan, Z. Lu, D. A. Stevenson, R. Hiskes, and S. A. DiCarolis

Appl. Phys. Lett. 64, 3104 (1994); http://dx.doi.org/10.1063/1.111361 (3 pages) | Cited 4 times

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Gadolinium‐doped barium cerate thin films have been grown on r‐plane (1102) sapphire and on silver foil substrates by single solid‐source metalorganic chemical vapor deposition using tetramethylheptanedionate mixed powder sources. The films have been deposited at 800 °C at a reduced pressure of 6 Torr. The bulk conductivity of the thin films, as measured by an alternating current impedance method, is close to that of sintered ceramic samples, and shows a similar hydrogen/deuterium isotope effect, providing evidence of protonic conduction.
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73.61.Ga II-VI semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Growth of alternating 〈100〉/〈111〉‐oriented II‐VI regions for quasi‐phase‐matched nonlinear optical devices on GaAs substrates

M. J. Angell, R. M. Emerson, J. L. Hoyt, J. F. Gibbons, L. A. Eyres, M. L. Bortz, and M. M. Fejer

Appl. Phys. Lett. 64, 3107 (1994); http://dx.doi.org/10.1063/1.111362 (3 pages) | Cited 6 times

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We present a technique for fabricating laterally patterned 〈111〉 and 〈100〉‐oriented regions of CdTe on GaAs by metalorganic chemical vapor deposition. Patterning of the crystal orientation is important for quasi‐phase‐matched nonlinear optical frequency conversion in semiconductor waveguides. Scanning electron micrographs and x‐ray diffraction analysis are used to confirm the presence of 〈111〉/〈100〉 grating structures. The CdTe layer is shown to be a suitable template to pattern the orientation of subsequently grown wide‐band‐gap films of ZnSe and ZnTe.
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.82.-m Integrated optics
81.15.Kk Vapor phase epitaxy; growth from vapor phase
77.80.Dj Domain structure; hysteresis

Direct measurement of the Hall factor for holes in relaxed Si1−xGex (0<x<1)

Y. C. Chen, S. H. Li, P. K. Bhattacharya, J. Singh, and J. M. Hinckley

Appl. Phys. Lett. 64, 3110 (1994); http://dx.doi.org/10.1063/1.111363 (2 pages) | Cited 6 times

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The Hall factor for holes in relaxed p‐type Si1−xGex alloys has been determined from mobility measurements at magnetic fields up to 7 T at 290 K. Our data together with previously published values for Si and Ge suggest that r for holes in SiGe varies between 0.73 and 1.7 with a possible strong bowing.
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73.50.Dn Low-field transport and mobility; piezoresistance
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Efficient photogeneration of charge carriers in a layered photoreceptor using a conjugated polymer

John A. Osaheni, Samson A. Jenekhe, and Jerry Perlstein

Appl. Phys. Lett. 64, 3112 (1994); http://dx.doi.org/10.1063/1.111364 (3 pages) | Cited 9 times

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The field‐dependent quantum efficiency ϕ(E) for photogeneration of charge carriers in a bilayer photoreceptor consisting of a poly(p‐phenylene benzobisthiazole) charge generation layer and a hole transporting layer has been measured by the xerographic photodischarge technique. ϕ(E) varied from 0.10 at low fields (<105 V/cm) to 0.32 at 106 V/cm. The conjugated polymer‐based photoreceptors have a photosensitivity of 13 ergs/cm2 and negligible dark decay (∼0.2 V/s). Photocarrier generation in the bilayer devices is suggested to be due to field‐assisted dissociation of exciplexes formed between the conjugated polymer and the hole transporting molecule.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.80.Le Polymers; organic compounds (including organic semiconductors)
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.61.Ph Polymers; organic compounds

Chemomechanical polishing of silicon: Surface termination and mechanism of removal

G. J. Pietsch, G. S. Higashi, and Y. J. Chabal

Appl. Phys. Lett. 64, 3115 (1994); http://dx.doi.org/10.1063/1.111365 (3 pages) | Cited 25 times

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Infrared spectroscopy of Si(111) samples immediately after chemomechanical planarization with silica slurry (‘‘siton polishing’’) shows that the surfaces are predominantly terminated by hydrogen. This hydrogen termination is responsible for the observed strong hydrophobicity peak at a slurry pH of 11, at which point a monohydride termination prevails. At higher or lower pH, silanol groups replace some of the hydrogen species causing an increase in surface hydrophilicity. A removal mechanism is proposed which involves the interplay of oxidation by OH− and subsequent termination by H.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Ja Surface and interface dynamics and vibrations
81.65.-b Surface treatments
78.66.Fd III-V semiconductors

Photoelectric properties of self‐supporting porous silicon

P. Hlinomaz, O. Klíma, A. Hospodková, E. Hulicius, J. Oswald, E. Šípek, and J. Kočka

Appl. Phys. Lett. 64, 3118 (1994); http://dx.doi.org/10.1063/1.111366 (3 pages) | Cited 10 times

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We present transient and steady‐state photocurrent data, measured in a special sample holder on a self‐supporting porous silicon (PS) sandwich structure. Although the value of the drift mobility is difficult to find, we have estimated on the basis of the time of flight (TOF) technique the trap controlled value of mobility‐lifetime product (μDτD) and from the steady‐state photocurrent we have deduced recombination controlled (μτ)ss value. Surprisingly (μτ)ss<μDτD. Charge collection is very low (about 1%) even for electric field F≊105 V/cm. However, the ‘‘schubweg’’=μτF is (for η≊10% and F=108 V/cm) about 1 μm, much more than the quantum size dimensions (2–5 nm).
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.80.Jc Other crystalline inorganic semiconductors

Temperature‐insensitive offset reduction in a Hall effect device

R. G. Mani and K. von Klitzing

Appl. Phys. Lett. 64, 3121 (1994); http://dx.doi.org/10.1063/1.111974 (3 pages) | Cited 7 times

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A double current technique applied to a double boundary device produces dual boundary specific Hall effects even above room temperature. It is shown that current compensation allows in situ cancellation of the offset voltage in the Hall effect, originating from effective contact misalignments. Thus, this method reduces the temperature‐dependent offset originating from the T dependence of the resistance, and improves the sensitivity of the Hall element to the external magnetic field. Possible applications such as field sensing elements, contactless switches, and position sensors are cited.
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85.30.Fg Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices)
73.25.+i Surface conductivity and carrier phenomena
72.20.-i Conductivity phenomena in semiconductors and insulators
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

High hole mobility in SiGe alloys for device applications

K. Ismail, J. O. Chu, and B. S. Meyerson

Appl. Phys. Lett. 64, 3124 (1994); http://dx.doi.org/10.1063/1.111367 (3 pages) | Cited 87 times

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We report high hole mobility in modulation‐doped SiGe alloys with Ge content up to 80%. The layers which are grown using ultrahigh‐vacuum chemical vapor deposition are of high crystalline quality, have smooth surfaces, and have a low density of misfit dislocations. As a result of strain and high Ge content, we have measured hole mobilities in the range of 800–1050 cm2/V s at room temperature, and 3300–3500 cm2/V s at 77 K. The corresponding two‐dimensional sheet hole density is about 3×1012 cm−2. Those numbers are, to our knowledge, the highest numbers ever reported for a SiGe alloy. The resistivity of this two‐dimensional hole channel at room temperature is, to our knowledge, the lowest for any p‐type semiconductor quantum well.
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73.61.Jc Amorphous semiconductors; glasses
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

High uniformity of threshold voltage for GaAs/AlGaAs high electron mobility transistors grown on a Si substrate

Takashi Aigo, Aiji Jono, Akiyoshi Tachikawa, Ryuichi Hiratsuka, and Akihiro Moritani

Appl. Phys. Lett. 64, 3127 (1994); http://dx.doi.org/10.1063/1.111368 (3 pages) | Cited 2 times

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We report on a study of microscopic distribution of threshold voltage ( Vth) for GaAs/AlGaAs high electron mobility transistors (HEMTs) on a Si substrate grown by metal‐organic chemical vapor deposition (MOCVD). Using selective dry etching, the superior microscopic distribution of Vth comparable to that for GaAs substrates is obtained, namely the standard deviation of threshold voltage (σ Vth) of 8.96 mV with the Vth of −101.3 mV for 150 points of the HEMT in a 1.95×1.9‐mm2 area. From the evaluation of macroscopic (full wafer) and microscopic Vth distribution, high‐density dislocations in the GaAs/Si are found not to affect the uniformity of Vth. This result indicates that HEMT/Si technology has a potential to lead the GaAs/Si to GaAs integrated circuit applications in which large‐diameter wafers are beneficial.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Carrier escape time dependence on multiple quantum well structure in InGaAs/In(Ga)AlAs systems

H. Uenohara, R. Takahashi, Y. Kawamura, and H. Iwamura

Appl. Phys. Lett. 64, 3130 (1994); http://dx.doi.org/10.1063/1.111369 (3 pages) | Cited 2 times

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The dependence of carrier escape time from InGaAs/In(Ga)AlAs multiple quantum wells (MQW) on barrier width and barrier height is studied by using pump‐probe measurement. Absorption saturation due to phase space filling caused by photogenerated carriers, and following electric‐field screening dominates the transient electroabsorption signals. The barrier thickness strongly affects the carrier escape time. Escape time from MQW of less than 5 ps occurs under high electric field, and the escape time from the optical confinement layer is about one order of magnitude larger.
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78.47.-p Spectroscopy of solid state dynamics
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Anomalous diffusion of lightly implanted As into Si substrate during N2 annealing

Nobutoshi Aoki, Takahisa Kanemura, and Ichiro Mizushima

Appl. Phys. Lett. 64, 3133 (1994); http://dx.doi.org/10.1063/1.111370 (3 pages) | Cited 5 times

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We observe the anomalous diffusion of lightly implanted As into Si substrate during conventional furnace anneal in nitrogen ambient. The anomalous behavior shows two conspicuous features in the near‐surface region and in the tail region. In the near‐surface region reaching about 30–50 nm from the interface, a large number of As atoms moves toward the oxide/Si interface, and occasionally accumulates in a narrow region about 10–20 nm from the interface. Retarded diffusion is observed in the tail region. The diffusivity in the tail region increases with the increase of annealing time.  
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61.72.uf Ge and Si
66.30.J- Diffusion of impurities

Improvement in radiation hardness of gate oxides in metal–oxide semiconductor devices by repeated rapid thermal oxidations in N2O

You‐Lin Wu and Jenn‐Gwo Hwu

Appl. Phys. Lett. 64, 3136 (1994); http://dx.doi.org/10.1063/1.111343 (3 pages)

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Instead of using the conventional one‐time N2O oxidation of silicon, repeated N2O rapid thermal oxidations (RNRTO) is proposed as a new gate oxide preparation method. The radiation hardness of metal–oxide semiconductor (MOS) capacitors with RNRTO oxide is found to be better than that with the conventional one‐time N2O‐grown oxide. The nitrogen content at the SiO2/Si interface as determined by secondary ion mass spectroscopy (SIMS) is constant for all the RNRTO samples but the thickness of the nitrogen‐rich interfacial layer increases as the number of RNRTO increases. The less strain gradient caused by this increasing nitrogen‐rich interfacial layer thickness is the main cause of improving the radiation hardness of the MOS capacitors.  
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61.80.Lj Atom and molecule irradiation effects
81.65.-b Surface treatments
61.72.up Other materials
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
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