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20 Jun 1994

Volume 64, Issue 25, pp. 3365-3511

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Growth of an inverse tetragonal distorted SiGe layer on Si(001) by adding small amounts of carbon

H. J. Osten, E. Bugiel, and P. Zaumseil

Appl. Phys. Lett. 64, 3440 (1994); http://dx.doi.org/10.1063/1.111235 (3 pages) | Cited 74 times

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Si1−x−yGexCy layers have been grown on Si(001) substrates with molecular beam epitaxy and investigated with transmission electron microscopy and x‐ray diffraction. We show that it is possible to adjust the strain in pseudomorphic SiGe layers by adding small amounts of carbon. A simple linear extrapolation between the different lattice constants opens the possibility to predict the SiGeC structure in dependence on the carbon content. It is possible to grown epitaxial SiGeC layers with up to 2% carbon. Larger carbon concentrations lead to a crystallographic degradation of the layers. We were able to grow the first pseudomorphic SiGeC layer on Si(001) that is under tensile stress. These layers exhibit a lattice plane spacing in growth direction smaller than that of silicon.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.05.cf X-ray scattering (including small-angle scattering)
61.05.cj X-ray absorption spectroscopy: EXAFS, NEXAFS, XANES, etc.
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)

Room‐temperature stimulated emission of optically pumped GaAs/AlAs quantum wires grown on (311)A‐oriented substrates

A. Orth, J. P. Reithmaier, A. Forchel, R. Nötzel, and K. Ploog

Appl. Phys. Lett. 64, 3443 (1994); http://dx.doi.org/10.1063/1.111236 (3 pages) | Cited 5 times

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Stimulated emission of optically pumped GaAs/AlAs quantum wires directly grown on (311)A‐oriented GaAs substrates has been observed at 77 K and room temperature. A significant reduction of the threshold excitation energy density for stimulated emission at room temperature could be measured in comparison to a two‐dimensional reference sample as well as a reduction of the temperature sensitivity of the threshold.
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42.55.Px Semiconductor lasers; laser diodes
78.45.+h Stimulated emission
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors

Electrical band gap of porous silicon

Zhiliang Chen, Tzung‐Yin Lee, and Gijs Bosman

Appl. Phys. Lett. 64, 3446 (1994); http://dx.doi.org/10.1063/1.111237 (3 pages) | Cited 14 times

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The electrical band gap of porous silicon is determined from measurements of the reverse bias current of homojunction pn porous silicon diodes versus temperature, resulting in a value of 2.2 eV. This value is in good agreement with the value of 1.97 eV obtained from photo‐ and electroluminescence experiments.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Formation of metal silicide‐silicon contact with ultralow contact resistance by silicon‐capping silicidation technique

Keiichi Yamada, Kazuo Tomita, and Tadahiro Ohmi

Appl. Phys. Lett. 64, 3449 (1994); http://dx.doi.org/10.1063/1.111238 (3 pages) | Cited 6 times

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Ultralow contact resistance of metal silicide‐n+‐Si contact has been achieved by a novel contact metallization process employing Ta silicidation of a n+‐Si contact surface by a Si‐capping silicidation technique. The Si‐capping silicidation has been employed to realize an ultraclean silicidation. The as‐deposited Ta surface is in situ covered with a very thin Si protection layer in order to prevent the metal surface from being oxidized or contaminated. By combining the oxide‐layer‐free Si/metal on Si deposition process and an ultraclean ion implantation for mixing, metal silicide‐n+Si structure has been formed by low temperature thermal annealing in an ultraclean Ar gas. As a result, an ultralow contact resistivity of 5.8×10−9 (Ω cm2) has been achieved.
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73.40.Vz Semiconductor-metal-semiconductor structures

Links between oxide, interface, and border traps in high‐temperature annealed Si/SiO2 systems

W. L. Warren, D. M. Fleetwood, M. R. Shaneyfelt, J. R. Schwank, P. S. Winokur, R. A. B. Devine, and D. Mathiot

Appl. Phys. Lett. 64, 3452 (1994); http://dx.doi.org/10.1063/1.111943 (3 pages) | Cited 24 times

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Evidence is provided to show that enhanced hole‐, interface‐, and border‐trap generation in irradiated high‐temperature annealed Si/SiO2/Si systems are all related either directly, or indirectly, to the presence of oxygen vacancies. We find that the calculated oxygen vacancy due to high‐temperature anneals from 800 to 950 °C in metal‐oxide‐semiconductor capacitors closely matches the radiation‐induced oxide‐trapped charge. This strongly suggests that oxygen vacancies (or vacancy‐related complexes) are the dominant hole trapping sites in this particular case. Along with the increase in radiation‐induced oxide‐trap charge, we observe a concomitant increase in the interface‐ and border‐trap densities. This suggests that in devices that receive high‐temperature anneals, all these phenomena are linked to the existence of oxygen vacancies either directly, or indirectly, perhaps via hole trapping at these vacancies.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.40.Ty Semiconductor-insulator-semiconductor structures
76.30.-v Electron paramagnetic resonance and relaxation
73.61.Cw Elemental semiconductors

X‐ray photoelectron spectroscopy measurement of valence‐band offsets for Mg‐based semiconductor compounds

M. W. Wang, J. F. Swenberg, M. C. Phillips, E. T. Yu, J. O. McCaldin, R. W. Grant, and T. C. McGill

Appl. Phys. Lett. 64, 3455 (1994); http://dx.doi.org/10.1063/1.111239 (3 pages) | Cited 11 times

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We have used x‐ray photoelectron spectroscopy to measure the valence‐band offsets for the lattice matched MgSe/Cd0.54Zn0.46Se and MgTe/Cd0.88Zn0.12Te heterojunctions grown by molecular beam epitaxy. By measuring core level to valence‐band maxima and core level to core level binding energy separations, we obtain values of 0.56±0.07 eV and 0.43±0.11 eV for the valence‐band offsets of MgSe/Cd0.54Zn0.46Se and MgTe/Cd0.88Zn0.12Te, respectively. Both of these values deviate from the common anion rule, as may be expected given the unoccupied cation d orbitals in Mg. Application of our results to the design of current II‐VI wide band‐gap light emitters is discussed.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Ga II-VI semiconductors

Thermodynamic stability of GaAs sulfur passivation

Yu. V. Medvedev

Appl. Phys. Lett. 64, 3458 (1994); http://dx.doi.org/10.1063/1.111240 (3 pages) | Cited 19 times

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The solid‐state part of the Ga‐As‐S‐O quaternary equilibrium phase diagram has been established from thermodynamic calculations. It is shown that GaS forms a chemically stable interface with GaAs, while As2S3 tends to react with GaAs and the reaction results in elemental As segregation at the GaAs/native sulfide interface. A recently developed chemical vapor deposition of GaS provides, hence, an ideal chemical passivation of GaAs.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.30.Dz Phase diagrams of other materials
81.65.-b Surface treatments

High concentration phosphorus doping of polycrystalline silicon by low temperature direct vapor phase diffusion of phosphine followed by rapid thermal annealing

S. Lourdudoss and S.‐L. Zhang

Appl. Phys. Lett. 64, 3461 (1994); http://dx.doi.org/10.1063/1.111241 (3 pages) | Cited 3 times

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Phosphorus doping of polycrystalline silicon by direct diffusion of PH3 at 685 and 785 °C followed by rapid thermal annealing (RTA) has been investigated. Unlike at 785 °C, the dopant profile is not uniform at 685 °C but becomes so after RTA at 1050 °C for 10 s, as revealed by secondary ion mass spectroscopy (SIMS). In the absence of any protection layer, RTA in N2 causes an out‐diffusion of ∼50% of P from the sample diffused at 785 °C, although it activates ∼100% of the remaining P atoms as indicated by Hall and SIMS measurements. In contrast, RTA in O2 results in 95% activation of the incorporated P from the same sample, accompanying an oxidation of ∼7 nm polycrystalline Si. As regards the sample diffused at 685 °C, RTA in N2 does not cause any out‐diffusion but activates less than 80% of the incorporated P atoms. This difference in behavior is attributed to the tendency to attain equilibrium concentrations of P in the crystallites and at the grain boundaries at the RTA temperature. The highest active P concentration achieved is 2.0×1020 cm−3 at 785 °C followed by RTA in O2 yielding a resistivity as low as 9×10−4 Ω cm. The simplicity of this relatively low temperature process is attractive for a single‐wafer multisequence fabrication scheme.
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66.30.J- Diffusion of impurities
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
64.75.-g Phase equilibria
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Relaxation of phosphor field in SrS:Ce thin film electroluminescent devices

Koutoku Ohmi, Satoshi Inoue, Shosaku Tanaka, and Hiroshi Kobayashi

Appl. Phys. Lett. 64, 3464 (1994); http://dx.doi.org/10.1063/1.111242 (3 pages) | Cited 11 times

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Capacitance‐applied voltage and internal charge‐phosphor field characteristics of SrS:Ce thin film electroluminescent devices have been studied. The average phosphor field of the SrS:Ce films reaches the maximum of 1.3 MV/cm and relaxes to 0.7 MV/cm, although the applied voltage increases. The turn‐on voltage of the SrS:Ce thin film electroluminescent device decreases nonlinearly with increase of conduction charge and depends on the slew rate dV/dt. A large spike current is observed and is thought to correspond to the charge generation in the SrS:Ce layer, which results in the space charge, and causes a relaxation of phosphor field in the SrS:Ce films.
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78.60.Fi Electroluminescence
73.61.Ga II-VI semiconductors
85.60.Jb Light-emitting devices

Selective growth of Ge in GeF4‐Si2H6 system

Masaji Yamamoto, Yoshiharu Takada, and Jun‐ichi Hanna

Appl. Phys. Lett. 64, 3467 (1994); http://dx.doi.org/10.1063/1.111243 (3 pages) | Cited 13 times

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Selective growth of Ge in GeF4‐Si2H6 system was investigated on SiO2 patterned Si substrates and its characteristics were discussed in comparison with those of W chemical vapor deposition in WF6‐SiH4 system which is similar in terms of a combination of redox materials including a fluorinated substance. The selectivity was governed primarily by the growth temperature. The selective growth on a SiO2 patterned Si substrate was achieved at a wide range of the gas flow ratios (Si2H6/GeF4) at 375 °C, where the characteristics of film growth were distinguished clearly from those at the temperatures over 400 °C larger quality degraded. The experimental results indicated that the selectivity was deeply rooted in the growth mechanisms of the film themselves which were separated around 400 °C.
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68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
82.30.-b Specific chemical reactions; reaction mechanisms
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Very high two‐dimensional hole gas mobilities in strained silicon germanium

E. Basaran, R. A. Kubiak, T. E. Whall, and E. H. C. Parker

Appl. Phys. Lett. 64, 3470 (1994); http://dx.doi.org/10.1063/1.111244 (3 pages) | Cited 14 times

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We report on the growth by solid source MBE and characterization of remote doped Si/SiGe/Si two‐dimensional hole gas structures. It has been found that by reducing the Ge composition to ≤13% and limiting the thickness of the alloy layer, growth temperatures can be increased up to 950 °C for these structures while maintaining good structural integrity and planar interfaces. Record mobilities of 19 820 cm2 V−1 s−1 at 7 K were obtained in normal structures. Our calculations suggest that alloy scattering is not important in these structures and that interface roughness and interface charge scattering limit the low temperature mobilities.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.50.Dn Low-field transport and mobility; piezoresistance
73.61.Cw Elemental semiconductors

Nitrogen content of oxynitride films on Si(100)

H. T. Tang, W. N. Lennard, M. Zinke‐Allmang, I. V. Mitchell, L. C. Feldman, M. L. Green, and D. Brasen

Appl. Phys. Lett. 64, 3473 (1994); http://dx.doi.org/10.1063/1.111948 (3 pages) | Cited 21 times

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The absolute nitrogen concentration in SiOxNy/Si films grown by rapid thermal oxidation in N2O has been determined by nuclear reaction analysis. Compared with conventional surface analysis methods, i.e., Auger electron spectroscopy, x‐ray photoelectron spectroscopy, and secondary ion mass spectrometry, the nuclear reaction 14N(d,α)12C provides more accurate depth profiles of 14N due to the quantitative nature of the technique and its high sensitivity, ∼6.0×1013 atoms cm2. Silicon oxynitride films prepared under various conditions, specifically different growing temperatures and times, were analyzed. Nitrogen is observed to accumulate in a narrow region in the oxynitride (within ≲2.5 nm) close to the interface; the total amount of nitrogen increases with increasing temperature and growth time.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
25.45.Hi Transfer reactions

Interfacial roughness in InAs/GaSb superlattices

M. E. Twigg, B. R. Bennett, B. V. Shanabrook, J. R. Waterman, J. L. Davis, and R. J. Wagner

Appl. Phys. Lett. 64, 3476 (1994); http://dx.doi.org/10.1063/1.111245 (3 pages) | Cited 11 times

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Using high‐resolution transmission electron microscopy (HRTEM), we have studied InAs/GaSb superlattices grown by molecular beam epitaxy. Our HRTEM observations indicate that the apparent interface width is on the order of 1 monolayer for InSb‐like interfaces, and on the order of 2 monolayers for GaAs‐like interfaces. The combination of these results with x‐ray diffraction and Raman scattering measurements leads us to conclude that these interface widths are principally due to roughness rather than to interfacial diffusion.
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68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.50.-f Structure of bulk crystals

Improvement of multiquantum‐barrier effect by layer‐thickness modulation

Hiroaki Fujii, Kenji Endo, and Hitoshi Hotta

Appl. Phys. Lett. 64, 3479 (1994); http://dx.doi.org/10.1063/1.111246 (3 pages) | Cited 8 times

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We propose a novel modulated‐layer‐thickness multiquantum‐barrier (MQB) structure, or chirped MQB. The chirped MQB has a larger potential increase (240 meV) against overflowing electrons than the uniform MQB by almost 100 meV. It also has a broader optimum well thickness width of 1.9 nm while the uniform MQB has only 0.5 nm optimum width. This indicates that the chirped MQB would work more effectively even under the layer thickness fluctuation caused by step bunching, etc.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.Fd III-V semiconductors
85.60.Jb Light-emitting devices

Band lineup at an organic‐inorganic semiconductor heterointerface: perylenetetracarboxylic dianhydride/GaAs(100)

Y. Hirose, W. Chen, E. I. Haskal, S. R. Forrest, and A. Kahn

Appl. Phys. Lett. 64, 3482 (1994); http://dx.doi.org/10.1063/1.111247 (3 pages) | Cited 45 times

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We present a photoemission study of the electronic properties of an interface between the organic semiconductor; 3, 4, 9,10 perylenetetracarboxylic dianhydride (PTCDA) and n‐type GaAs(100). We examine the evolution of the interface electron distribution as a function of PTCDA overlayer thickness. The highest occupied molecular orbital level of PTCDA is measured at 0.7±0.1 eV below the GaAs valence band maximum. The PTCDA ionization potential is measured at 6.4±0.15 eV. The discrepancy between the band alignment deduced from photoemission and transport measurement suggests that interface states or polarization effects play a role in determining the transport properties of the organic‐inorganic heterojunction diodes.
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79.60.Bm Clean metal, semiconductor, and insulator surfaces
79.60.Fr Polymers; organic compounds
79.60.Jv Interfaces; heterostructures; nanostructures

Schottky enhancement of reacted NiAl/n‐GaAs contacts

C.‐P. Chen, Y. A. Chang, and T. F. Kuech

Appl. Phys. Lett. 64, 3485 (1994); http://dx.doi.org/10.1063/1.111248 (3 pages) | Cited 7 times

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Schottky enhancement of reacted NiAl/n‐GaAs contacts was demonstrated experimentally. The Schottky barrier height increases from 0.83 eV for the as‐deposited contacts to 0.96 eV when the contacts were annealed at 400 °C for 1 min. Formation of a high Al content (Al,Ga)As layer at the interface upon annealing was rationalized in terms of a thermodynamic/kinetic model. A (200) dark field cross‐sectional transmission electron microscopy image was used to show the presence of high Al content (Al,Ga)As at the interface.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Cg Contact resistance, contact potential
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Photochemically formed refractive index profiles in nonlinear optical polymer thin films

Jang‐Joo Kim, Taehyoung Zyung, and Wol‐Yon Hwang

Appl. Phys. Lett. 64, 3488 (1994); http://dx.doi.org/10.1063/1.111249 (3 pages) | Cited 12 times

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A simple but realistic kinetic model has been developed to describe the refractive index profile formed by photochemical reaction in nonlinear optical polymers. The effects of the absorption due to the unconvertible reactant and the photoproduct are included in the model. The experimental results are consistent with the model. The parameters required in the model are obtained from a simple transmission experiment. The rate of the bleached depth change with time becomes slower as the bleaching proceeds, while the shape of the index profile was kept nearly the same. Small absorption of bleaching light due to the photoproduct has a significant effect on the resulting refractive index profiles.
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42.70.Jk Polymers and organics
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
82.30.-b Specific chemical reactions; reaction mechanisms
82.50.-m Photochemistry

Radio frequency performance of superconducting thin films in high magnetic fields

H. Hübner and A. A. Valenzuela

Appl. Phys. Lett. 64, 3491 (1994); http://dx.doi.org/10.1063/1.111250 (3 pages) | Cited 1 time

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We describe measurements of the specific resistivity of epitaxially grown YBa2Cu3O7−x thin films in the presence of a magnetic field of up to 1 T at 270 MHz. At 77 K and 300 mT a 70‐fold reduction of the specific resistance, as compared to liquid nitrogen cooled copper, is achieved. These results suggest a possible application of these films as small receiving coils with improved sensitivity in low field nuclear magnetic resonance imaging systems.
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74.25.N- Response to electromagnetic fields
74.78.-w Superconducting films and low-dimensional structures
74.72.-h Cuprate superconductors

Low‐frequency excess noise in YBa2Cu3O7−x dc superconducting quantum interference devices cooled in static magnetic fields

A. H. Miklich, D. Koelle, T. J. Shaw, F. Ludwig, D. T. Nemeth, E. Dantsker, John Clarke, Neil McN. Alford, Tim W. Button, and M. S. Colclough

Appl. Phys. Lett. 64, 3494 (1994); http://dx.doi.org/10.1063/1.111251 (3 pages) | Cited 28 times

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We have investigated the performance of YBa2Cu3O7−x dc superconducting quantum interference devices (SQUIDs) cooled in static magnetic fields, B0, of 0.01–1 mT. For fields less than the earth’s ambient field, about 0.05 mT, the white noise of the devices at 77 K is not materially affected. However, at a frequency f of 1 Hz the spectral density of the 1/f noise, SΦ (1 Hz), at 0.05 mT increases by an order of magnitude over that for zero field. Furthermore, SΦ (1 Hz) scales approximately linearly with B0, suggesting strongly that the noise originates in the motion of vortices in the YBCO film. This increase in noise is likely to be an issue for SQUIDs operated in the earth’s field.
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85.25.Dq Superconducting quantum interference devices (SQUIDs)
74.72.-h Cuprate superconductors
74.78.-w Superconducting films and low-dimensional structures

Four layer monolithic integrated high Tc dc SQUID magnetometer

J. W. M. Hilgenkamp, G. C. S. Brons, J. G. Soldevilla, R. P. J. IJsselsteijn, J. Flokstra, and H. Rogalla

Appl. Phys. Lett. 64, 3497 (1994); http://dx.doi.org/10.1063/1.111252 (3 pages) | Cited 15 times

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YBa2Cu3O7−x based monolithic integrated dc SQUID magnetometers, consisting of a dc SQUID integrated with a flux transformer on a single bicrystalline substrate, have been fabricated and characterized. The devices consist of four layers, including two superconducting layers, and first realizations operate up to 73 K. A maximum voltage modulation of 32 μV is observed at 40 K. A field sensitivity of 0.17 pT/√Hz is obtained above 200 Hz at 45 K and 0.49 pT/√Hz at 1 Hz and 65 K.
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85.25.Dq Superconducting quantum interference devices (SQUIDs)
74.72.-h Cuprate superconductors
74.78.-w Superconducting films and low-dimensional structures
74.78.Fk Multilayers, superlattices, heterostructures

Giant magnetoresistance in Fe/Cr superlattices with very thin Fe layers

R. Schad, C. D. Potter, P. Beliën, G. Verbanck, V. V. Moshchalkov, and Y. Bruynseraede

Appl. Phys. Lett. 64, 3500 (1994); http://dx.doi.org/10.1063/1.111253 (3 pages) | Cited 61 times

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Carefully tailored Fe/Cr epitaxial superlattices with extremely thin Fe layers have been grown on MgO(100) by molecular beam epitaxy. The low‐angle x‐ray spectra reveal the presence of sharp interfaces down to an Fe layer thickness of a few monolayers. An [Fe(4.5 Å)/Cr(12 Å)]50 superlattice shows a 220% magnetoresistance at 1.5 K, and a saturation field of 110 kOe. A further decrease of the Fe layer thickness produces a drastic decrease in the magnetoresistance.
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73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.61.At Metal and metallic alloys
75.30.Et Exchange and superexchange interactions
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)

Extraction of the coefficient of giant magnetoresistance

Y. U. Idzerda, C.‐T. Chen, S.‐F. Cheng, W. Vavra, G. A. Prinz, G. Meigs, H.‐J. Lin, and G. H. Ho

Appl. Phys. Lett. 64, 3503 (1994); http://dx.doi.org/10.1063/1.111254 (3 pages) | Cited 7 times

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Element specific magnetic hysteresis (ESMH) loops have been used in conjunction with measured magnetoresistance curves to extract the coefficient of giant magnetoresistance (GMR), which is the maximum achievable value of the GMR independent of magnetic domain effects and incomplete moment alignment effects, for sputtered Fe/Cu/Co sandwiches on silicon substrates. Using the ESMH loops to calculate GMR curves, comparison with the measured GMR curves shows that the magnetization reversal process is best described by multidomain Ising behavior.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
78.70.Dm X-ray absorption spectra

Deposition of micrometer‐sized tungsten patterns by laser transfer technique

Z. Kántor, Z. Tóth, T. Szörényi, and A. L. Tóth

Appl. Phys. Lett. 64, 3506 (1994); http://dx.doi.org/10.1063/1.111255 (3 pages) | Cited 14 times

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A simple single‐step technique for surface patterning is presented. It is shown that well‐adhering micrometer‐sized patterns of 100% coverage preserving the shape and dimensions of the ablated area can be deposited by ablating and transferring tungsten thin films in the form of single solid pieces using single pulses of peak power up to 100 mW and 100 μs–1 ms duration from a diode‐pumped YAG laser.
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81.15.Fg Pulsed laser ablation deposition

Formation of lanthanum strontium cobalt thin films by metalorganic decomposition

Joseph V. Mantese, Adolph L. Micheli, Antonio B. Catalan, and Norman W. Schubring

Appl. Phys. Lett. 64, 3509 (1994); http://dx.doi.org/10.1063/1.111256 (3 pages) | Cited 8 times

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Electrically conductive films of La0.5Sr0.5CoO3, 1 μm thick, were formed on a variety of substrates by metalorganic decomposition. The lowest resistivity films (1.2×10−3 Ω cm) were obtained on c‐axis sapphire by annealing in oxygen at 800 °C. The film conductivity was limited by the diffusion of strontium into the substrate.
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72.15.Rn Localization effects (Anderson or weak localization)
81.15.Rs Spray coating techniques
73.50.-h Electronic transport phenomena in thin films
73.90.+f Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures (Restricted to new topics in section 73)
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