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27 Jun 1994

Volume 64, Issue 26, pp. 3527-3667

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Accelerated photobleaching of nonlinear optical polymer for the formation of optical waveguide

Taehyoung Zyung, Wol‐Yon Hwang, and Jang‐Joo Kim

Appl. Phys. Lett. 64, 3527 (1994); http://dx.doi.org/10.1063/1.111262 (3 pages) | Cited 7 times

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The photobleaching process in nonlinear optical polymer thin film is shown to be accelerated by the addition of a photosensitizer. Photobleaching time has been effectively reduced by a factor of 3–5. Refractive indices of both unbleached and fully bleached film with benzyldimethylketal (BDK) is higher than those of the film without BDK. Nonlinear optical properties of the optical copolymer with photosensitizer were little affected by the addition of the photosensitizer. Optical loss of the waveguide formed by the technique is comparable to that of waveguide without photosensitizer.
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42.70.Jk Polymers and organics
42.79.Gn Optical waveguides and couplers
82.30.-b Specific chemical reactions; reaction mechanisms
82.50.-m Photochemistry

Efficient polarization insensitive electroabsorption modulator using strained InGaAsP‐based quantum wells

S. Chelles, R. Ferreira, P. Voisin, A. Ougazzaden, M. Allovon, and A. Carenco

Appl. Phys. Lett. 64, 3530 (1994); http://dx.doi.org/10.1063/1.111263 (3 pages) | Cited 8 times

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Polarization insensitivity is presently an important challenge for electro‐optical components for optical‐fiber telecommunications. We report on a polarization insensitive electroabsorption modulator based on strained InGaAsP/InGaAsP multiple quantum wells and having remarkably high static performances, as illustrated by a record figure of merit of 4.3 (dB/100 μm)/(V/μm). We also discuss in detail the theoretical aspects of electroabsorption polarization independence for quantum well modulators.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.20.Jq Electro-optical effects
78.66.Fd III-V semiconductors

Highly efficient Cherenkov‐type second harmonic generation in a Ta2O5/KTiOPO4 waveguide

Tohru Doumuki, Hitoshi Tamada, and Masaki Saitoh

Appl. Phys. Lett. 64, 3533 (1994); http://dx.doi.org/10.1063/1.111971 (3 pages) | Cited 9 times

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Highly efficient Cherenkov‐type second harmonic generation is investigated. The waveguide is composed of a KTiOPO4 substrate, a Ta2O5 thin‐film core and a SiO2 clad in the strip‐loaded configuration. The conversion efficiency strongly depends on the waveguide geometry, and it can be a maximum for a particular Ta2O5 film thickness with a Cherenkov angle of nearly 0°. This maximum efficiency is further increased by narrowing the waveguide width down to 1.8 μm. Consequently, a normalized conversion efficiency of 210%/W cm and a blue second harmonic power of 28 mW were achieved with the 4.5‐mm‐long waveguide.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Gn Optical waveguides and couplers

High efficiency and low threshold current strained V‐groove quantum‐wire lasers

Sandip Tiwari, G. David Pettit, Keith R. Milkove, Francoise Legoues, Robert J. Davis, and Jerry M. Woodall

Appl. Phys. Lett. 64, 3536 (1994); http://dx.doi.org/10.1063/1.111264 (3 pages) | Cited 47 times

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Multi‐quantum‐wire strained lasers are reported in the Ga1−xInxAs/Ga1−xAlxAs semiconductor material system with a minimum threshold current of 188 μA and maximum powers of ≊50 μW in continuous multimode operation at wavelengths of ≊980 nm and differential output of ≊0.5 μW/μA. The structures, fabricated by molecular‐beam epitaxy, are self‐aligned, self‐isolated, and minimize electrical and optical losses. Internal quantum efficiencies are ≊83% and internal losses are ≊4.2 cm−1. Characteristic temperatures of ≊260 K, and an increase in threshold current and lasing wavelength under externally applied stress changing from compressive to tensile conditions, show that the major determinants of lasing threshold are density of states and optical losses.
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85.60.Jb Light-emitting devices
42.55.Px Semiconductor lasers; laser diodes
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Period‐doubling route to chaos in a semiconductor laser subject to optical injection

T. B. Simpson, J. M. Liu, A. Gavrielides, V. Kovanis, and P. M. Alsing

Appl. Phys. Lett. 64, 3539 (1994); http://dx.doi.org/10.1063/1.111218 (3 pages) | Cited 45 times

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Experimental measurements and a single‐mode analysis of a quantum‐well laser diode subject to strong optical injection are combined to demonstrate that the diode follows a period‐doubling route to chaos. All laser parameters used in this model, including the influence of spontaneous emission noise, were experimentally determined based on the four‐wave mixing technique. The transition to chaos can be used to reduce the uncertainty in the value of the linewidth enhancement factor.
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42.50.Lc Quantum fluctuations, quantum noise, and quantum jumps
42.55.Px Semiconductor lasers; laser diodes
42.65.-k Nonlinear optics
42.60.Mi Dynamical laser instabilities; noisy laser behavior

Generation of large, high density, homogeneous plasma by capillary discharge

Y. Ehrlich, C. Cohen, A. Zigler, and J. S. Wark

Appl. Phys. Lett. 64, 3542 (1994); http://dx.doi.org/10.1063/1.111970 (3 pages) | Cited 7 times

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Generation of 10‐mm‐long homogeneous plasmas with densities above 1020 cm−3 is reported. The plasma parameters are simply controlled by varying the discharge voltage. High homogeneity was achieved by using a long rectangular expansion channel made out of a high thermal conductivity alloy.
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52.50.-b Plasma production and heating
52.75.-d Plasma devices
52.70.-m Plasma diagnostic techniques and instrumentation
52.80.Vp Discharge in vacuum

Pressure dependence of the band gaps in Si quantum wires

Chin‐Yu Yeh, S. B. Zhang, and Alex Zunger

Appl. Phys. Lett. 64, 3545 (1994); http://dx.doi.org/10.1063/1.111219 (3 pages) | Cited 6 times

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The pressure coefficients a of interband transitions in (001) silicon wires are calculated using a plane‐wave basis and carefully fitted empirical pseudopotentials. We find purely red shifts (a<0). Their magnitudes, as well as changes with wire sizes can be interpreted in terms of the ‘‘truncated crystal model’’ which describes the wire conduction bands as linear combination of the lowest bulk conduction bands along the Γ‐X line.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.Db Elemental semiconductors and insulators

Tetragonal zirconia growth by nanolaminate formation

C. M. Scanlan, M. Gajdardziska‐Josifovska, and C. R. Aita

Appl. Phys. Lett. 64, 3548 (1994); http://dx.doi.org/10.1063/1.111220 (3 pages) | Cited 27 times

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Multilayer films of polycrystalline zirconia and amorphous alumina were grown by reactive sputter deposition and characterized using x‐ray diffraction and high resolution electron microscopy. We demonstrate that the layer spacing can be scaled to insure nanosize crystallites in the zirconia layer. The result is that nanolaminates with a high volume fraction of retained tetragonal zirconia are produced, independent of deposition parameters and without the addition of a stabilizing dopant.
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81.15.Cd Deposition by sputtering
81.30.Dz Phase diagrams of other materials
68.55.-a Thin film structure and morphology
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Rare‐earth garnet selective emitter

Roland A. Lowe, Donald L. Chubb, Serene C. Farmer, and Brian S. Good

Appl. Phys. Lett. 64, 3551 (1994); http://dx.doi.org/10.1063/1.111221 (3 pages) | Cited 17 times

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Thin film (Ho)‐yttrium aluminum garnet (YAG) and Er‐YAG emitters with a platinum substrate exhibit high spectral emittance in the emission band (ϵλ≊0.75, 4I15/2–4I13/2, for Er‐YAG and ϵλ≊0.65, 5I7–5I8 for Ho‐YAG) at 1500 K. In addition, low out‐of‐band spectral emittance, ϵλ<0.2, suggest these materials would be excellent candidates for high efficiency selective emitters in thermophotovoltaic (TPV) systems operating at moderate temperatures (1200–1500 K). Spectral emittance measurements of the thin films were made (1.2<λ<3.0 μm) and compared to the theoretical emittances calculated using measured values of the spectral extinction coefficient.
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78.66.Nk Insulators
85.60.Jb Light-emitting devices

Structural study of a Si(001) grating surface by white beam x‐ray Laue photography

Qun Shen, B. Weselak, and J. M. Blakely

Appl. Phys. Lett. 64, 3554 (1994); http://dx.doi.org/10.1063/1.111222 (3 pages) | Cited 5 times

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We demonstrate in this letter that an x‐ray diffraction pattern from a two‐dimensional surface grating of periods 0.3 μm can be obtained by means of white beam Laue photography using synchrotron radiation. Such photographs or images can provide direct and useful information on the shape of the grating pillars as well as the crystalline quality of the grating material.
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61.05.cf X-ray scattering (including small-angle scattering)
61.05.cj X-ray absorption spectroscopy: EXAFS, NEXAFS, XANES, etc.
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology
78.70.Ck X-ray scattering

Tunability of one‐dimensional self‐faceting on GaAs (311)A surfaces by metalorganic vapor‐phase epitaxy

Richard Nötzel, Jiro Temmyo, and Toshiaki Tamamura

Appl. Phys. Lett. 64, 3557 (1994); http://dx.doi.org/10.1063/1.111196 (3 pages) | Cited 34 times

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The controlled step bunching on GaAs (311)A oriented surfaces during growth by metalorganic vapor‐phase epitaxy (MOVPE) leads to one‐dimensional faceting with a lateral period tunable upon growth temperature and layer thickness in the mesoscopic size range 25–80 nm. The surface morphology established during MOVPE growth directly images the microscopic surface structure maintained during growth by conventional solid source molecular beam epitaxy (MBE) and allows us to control the lateral period in GaAs/AlGaAs wire‐like heterostructures. The red shift of the luminescence at room temperature from these structures is directly correlated with the lateral period of faceting.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Low‐temperature scanning tunneling microscopy study of nucleation, percolation, and growth of ultrathin Ag films on Si(111)7×7

Gerhard Meyer and K. H. Rieder

Appl. Phys. Lett. 64, 3560 (1994); http://dx.doi.org/10.1063/1.111197 (3 pages) | Cited 30 times

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We have studied the growth of ultrathin Ag films on Si(111)7×7 between 80–100 K with low‐temperature scanning tunneling microscopy. Nucleation of Ag in both halves of the 7×7 is observed. Corner holes and dimer sites are not occupied. Percolation occurs at submonolayer coverage through contact between the nucleated 2D Ag islands. This results in a honeycomb random site percolation problem. Upon completion of the first monolayer, 2D layer‐like growth is observed.
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68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
68.55.-a Thin film structure and morphology
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Epitaxial growth of SrTiO3/YBa2Cu3O7−x heterostructures by plasma‐enhanced metalorganic chemical vapor deposition

S. Liang, C. S. Chern, Z. Q. Shi, P. Lu, A. Safari, Y. Lu, B. H. Kear, and S. Y. Hou

Appl. Phys. Lett. 64, 3563 (1994); http://dx.doi.org/10.1063/1.111198 (3 pages) | Cited 11 times

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We report heteroepitaxial growth of SrTiO3 on YBa2Cu3O7−x/LaAlO3 substrates by plasma‐enhanced metalorganic chemical vapor deposition. X‐ray diffraction results indicated that SrTiO3 films were epitaxially grown on a (001) YBa2Cu3O7−x surface with [100] orientation perpendicular to the surface. The film composition, with Sr/Ti molar ratio in the range of 0.9 to 1.1, was determined by Rutherford backscattering spectrometry and energy dispersive spectroscopy. The thickness of the SrTiO3 films is 0.1–0.2 μm. The epitaxial growth was further evidenced by high‐resolution transmission electron microscopy and selected area diffraction. Atomically abrupt SrTiO3/YBa2Cu3O7−x interface and epitaxial growth with [100]SrTiO3∥[001]YBa2Cu3O7−x were observed in this study. The superconducting transition temperature of the bottom YBa2Cu3O7−x layer, as measured by ac susceptometer, did not significantly degrade after the growth of overlayer SrTiO3. The capacitance‐voltage measurements showed that the dielectric constant of the SrTiO3 films was as high as 315 at a signal frequency of 100 KHz. The leakage current density through the SrTiO3 films is about 1×10−6 A/cm2 at 2‐V operation. Data analysis on the current‐voltage characteristic indicated that the conduction process is related to bulk‐limited Poole‐Frenkel emission.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
74.72.-h Cuprate superconductors
74.78.-w Superconducting films and low-dimensional structures
73.40.Rw Metal-insulator-metal structures

Energy dissipation during nanoscale indentation of polymers with an atomic force microscope

E. Boschung, M. Heuberger, and G. Dietler

Appl. Phys. Lett. 64, 3566 (1994); http://dx.doi.org/10.1063/1.111199 (3 pages) | Cited 11 times

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Nanometer size indentations on polypropylene and polymethylmethacrylate were made with the atomic force microscope and were 200‐nm wide and 20‐nm deep for a tip penetration depth of 75 nm. To image the indentations with the same tip used for writing, the tip was retracted at high speed, thus detaching any polymer sticking on it. Nanomechanical properties of polymer are studied in the limit of shallow indentations and slow penetration speed. From the hysteresis of the force versus tip motion curve, the dissipated energy during the indentation and the inelastic deformation of the polymer surface can be measured. We find that the measured dissipated energy is proportional to the volume of the indentation times the activation energy needed to excite chain segments motion during the deformation.
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61.41.+e Polymers, elastomers, and plastics
83.10.Gr Constitutive relations
62.20.F- Deformation and plasticity
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy

Nanocrystal seeding: A low temperature route to polycrystalline Si films

J. R. Heath, S. M. Gates, and C. A. Chess

Appl. Phys. Lett. 64, 3569 (1994); http://dx.doi.org/10.1063/1.111200 (3 pages) | Cited 13 times

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A novel method is presented for growth of polycrystalline silicon films on amorphous substrates at temperatures of 540–575 °C. Grain nucleation and grain growth are performed in two steps, using Si nanocrystals as nuclei (‘‘seeds’’). The nanocrystal seeds are produced by excimer laser photolysis of disilane in a room temperature flow cell. Film (grain) growth occurs epitaxially on the seeds in a separate thermal chemical vapor deposition (CVD) step, with growth rates 10–100 times higher than similar CVD growth rates on crystal Si. Grain size and CVD growth rates are dependent on seed coverage, for seed coverage <0.2 monolayers.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
81.15.Kk Vapor phase epitaxy; growth from vapor phase
61.66.Bi Elemental solids

Optical detection of misfit dislocation‐induced deep levels at InGaAs/GaAs heterojunctions

A. Raisanen, L. J. Brillson, R. S. Goldman, K. L. Kavanagh, and H. H. Wieder

Appl. Phys. Lett. 64, 3572 (1994); http://dx.doi.org/10.1063/1.111201 (3 pages) | Cited 10 times

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Using variable‐depth luminescence excitation probes, we have observed discrete emission at characteristic energies from deep electronic states associated with misfit dislocations at InGaAs/GaAs interfaces. These states are localized near the buried heterointerface within the InGaAs layer and exhibit only minor variations in energy with composition and strain. The dislocation‐induced spectral features appear only in strain‐relaxed InGaAs films and are uncorrelated with additional features due to native bulk defects.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.60.-b Other luminescence and radiative recombination
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Sputter‐induced formation of an electron accumulation layer in In0.52Al0.48As

J. E. Maslar, P. W. Bohn, S. Agarwala, I. Adesida, C. Caneau, and R. Bhat

Appl. Phys. Lett. 64, 3575 (1994); http://dx.doi.org/10.1063/1.111202 (3 pages) | Cited 3 times

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Ar‐sputtering of In0.52Al0.48As was investigated with room‐temperature Raman and photoluminescence spectroscopy. A clear increase of carrier density in the near‐surface region was observed in the Raman spectra. The PL intensity was found to depend in a complex way on plasma self‐bias potential, incident laser irradiance, and InAlAs doping level, indicating that the recombination mechanisms dominating the PL response differ with changing experimental conditions. The observed trends can be explained by sputter‐induced formation of an electron accumulation layer in the near‐surface region.
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78.30.Fs III-V and II-VI semiconductors
81.65.-b Surface treatments
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.55.Cr III-V semiconductors

Comparison of the picosecond characteristics of silicon and silicon‐on‐sapphire metal‐semiconductor‐metal photodiodes

Chia‐Chi Wang, Sotiris Alexandrou, Douglas Jacobs‐Perkins, and Thomas Y. Hsiang

Appl. Phys. Lett. 64, 3578 (1994); http://dx.doi.org/10.1063/1.111203 (3 pages) | Cited 15 times

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The picosecond characteristics of silicon‐based metal‐semiconductor‐metal (MSM) diodes with submicrometer finger spacing and width were studied. Diodes made on both bulk silicon and silicon‐on‐sapphire (SOS) substrates were measured by a subpicosecond electro‐optic sampling system. The response of bulk‐silicon MSM diodes was strongly dependent on the wavelength of the excitation light because of the change in penetration depth. The response of SOS diodes, on the other hand, had a weak dependence on wavelength since the thickness of the silicon layer limits the depth of photogenerated carriers. The response of a 200 nm SOS diode has a full‐width at half‐maximum of 4.5 and 5.7 ps with blue‐ and red‐light excitations. The external quantum efficiency of SOS diodes was also determined at several selected wavelengths.
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73.40.Sx Metal-semiconductor-metal structures
78.47.-p Spectroscopy of solid state dynamics
85.60.Gz Photodetectors (including infrared and CCD detectors)
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices

Reduction of the defect density in hydrogenated amorphous silicon by thermally energized growth precursors

Gautam Ganguly, Hitoshi Nishio, and Akihisa Matsuda

Appl. Phys. Lett. 64, 3581 (1994); http://dx.doi.org/10.1063/1.111204 (3 pages) | Cited 4 times

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The defect density in plasma deposited hydrogenated amorphous silicon (a‐Si:H) is known to be dependent on the thermal energy of growth precursors. The precursor temperature can be controlled independent of the substrate temperature by a mesh‐type electrode placed close to the substrate. Energized precursors have a higher surface diffusion coefficient which results in a reduction of the steady‐state defect density on the growth surface and hence in the film bulk. The optical band gap and hydrogen content depend only on the substrate temperature while the defect density is reduced drastically with increasing mesh temperature. Thereby, we have prepared a‐Si:H having low defect density and wide optical band gap.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
71.55.Jv Disordered structures; amorphous and glassy solids
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
61.43.Dq Amorphous semiconductors, metals, and alloys

High quality ultrathin dielectric films grown on silicon in a nitric oxide ambient

Z.‐Q. Yao, H. B. Harrison, S. Dimitrijev, D. Sweatman, and Y. T. Yeow

Appl. Phys. Lett. 64, 3584 (1994); http://dx.doi.org/10.1063/1.111205 (3 pages) | Cited 47 times

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High quality ultrathin silicon oxynitride films (3.5 nm) have been grown in a nitric oxide ambient using rapid thermal processing. The physical and electrical properties of these films are compared with those formed in a nitrous oxide environment. X‐ray photoelectron spectroscopy (XPS) results show that the nitric oxide (NO) grown films have a significantly different nitrogen distribution compared to the nitrious oxide (N2O) grown films. The capacitance‐voltage and current‐voltage characteristics of the NO grown and NO‐modified films are, in general, better than those of the same thickness grown in either N2O or O2.
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77.55.-g Dielectric thin films
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Modulated reflectance and resonant Raman scattering of GaAs quantum wires grown on nonplanar substrates

R. Rinaldi, R. Cingolani, M. Ferrara, A. C. Maciel, J. Ryan, U. Marti, D. Martin, F. Morier‐Gemoud, and F. K. Reinhart

Appl. Phys. Lett. 64, 3587 (1994); http://dx.doi.org/10.1063/1.111206 (3 pages) | Cited 1 time

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Modulated reflectance spectroscopy and resonant Raman scattering have been used to study the quantized states of crescent‐shaped GaAs quantum wires. Distinct one‐dimensional excitonic transitions originating from the quantum wires together with the expected resonances from the bent quantum wells are observed. The quantum wire transition energies compare very well with those calculated using a V‐shaped potential derived from transmission electron microscopy measurements of the lateral variation of the GaAs well width. The spectroscopic techniques employed here provide alternative methods of probing the confined states in quantum wires of low luminescence efficiency.
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78.66.Fd III-V semiconductors
78.30.Fs III-V and II-VI semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Photoluminescence spectrum redshifting of porous silicon by a polymeric carbon layer

O. Teschke, F. Galembeck, M. C. Gonçalves, and C. U. Davanzo

Appl. Phys. Lett. 64, 3590 (1994); http://dx.doi.org/10.1063/1.111207 (3 pages) | Cited 5 times

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Photoluminescence of porous silicon at room temperature shifts to a larger wavelength in low‐resistivity Si samples (0.006 Ω cm) when compared to the one emitted by high resistivity samples (0.4 Ω cm). This shift is associated with a coating of hydrocarbon over the porous silicon structure. The hydrocarbon coating was identified by electron energy loss spectroscopy imaging together with infrared spectroscopy.
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78.55.Hx Other solid inorganic materials
78.30.Hv Other nonmetallic inorganics
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

Atomic ordering in molecular beam epitaxial InAsySb1−y natural strained layer superlattices and homogeneous layers

Tae‐Yeon Seong, G. R. Booker, A. G. Norman, and I. T. Ferguson

Appl. Phys. Lett. 64, 3593 (1994); http://dx.doi.org/10.1063/1.111208 (3 pages) | Cited 22 times

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Transmission electron microscope studies were made of CuPt‐type ordering in molecular beam epitaxial InAsySb1−y natural strained layer superlattices and homogeneous layers grown at temperatures in the range 295–470 °C. Ordering occurs with a maximum at a growth temperature of 370–400 °C, individual (111) and (111) ordered domains up to 10 nm in size are present, and there is a modulation of periodicity 3 d110 within the layers, where d110 is the (110) lattice spacing. The latter correlates with a [2×3] atomic surface reconstruction present during growth.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)

Enhanced damage accumulation in carbon implanted silicon

J. P. de Souza, H. Boudinov, and P. F. P. Fichtner

Appl. Phys. Lett. 64, 3596 (1994); http://dx.doi.org/10.1063/1.111209 (2 pages) | Cited 5 times

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The accumulation of damage in Si implanted with 12C+ was investigated experimentally using aligned Rutherford backscattering analysis. The damage profiles in Si implanted with 12C+ or 11B+ at 50 keV to the same doses and dose rate were compared. It was found that the damage accumulates at a noticeably higher rate by 12C+ implantation than by 11B+, especially for doses ≳2×1015 cm−2. In order to explain our results we suggest that self‐interstitial Si atoms are captured by the implanted C atoms, forming complex defects which are stable at room temperature.
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61.72.uf Ge and Si
61.80.Jh Ion radiation effects
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Phosphorus‐induced positive charge in native oxide of silicon wafers

Hirofumi Shimizu and Chusuke Munakata

Appl. Phys. Lett. 64, 3598 (1994); http://dx.doi.org/10.1063/1.111210 (2 pages) | Cited 4 times

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Alternating current surface photovoltage is enhanced in p‐type silicon (Si) wafers, which are rinsed with a phosphorus (P)‐contaminated water solution, whereas it is reduced in n‐type Si wafers, indicating that the positive charge appears at wafer surfaces. This result suggests that P reacts with SiO2 in the form of (POSi)+ network, causing a positive charge in the native oxide.
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72.40.+w Photoconduction and photovoltaic effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.40.Ty Semiconductor-insulator-semiconductor structures
73.61.Ng Insulators
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