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27 Jun 1994

Volume 64, Issue 26, pp. 3527-3667

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Ordered vacancy compound CuIn3Se5 on GaAs (100): Epitaxial growth and characterization

A. J. Nelson, G. S. Horner, K. Sinha, and M. H. Bode

Appl. Phys. Lett. 64, 3600 (1994); http://dx.doi.org/10.1063/1.111211 (2 pages) | Cited 33 times

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Epitaxial growth of the ordered vacancy compound CuIn3Se5 has been achieved on GaAs (100) by molecular beam epitaxy from Cu2Se and In2Se3 sources. Electron probe microanalysis and x‐ray diffraction have confirmed the composition for the 1‐3‐5 phase and that the films are single‐crystal CuIn3Se5 (100). Transmission electron microscopy characterization of the material also showed it to be single crystalline. Structural defects in the layer consisted mainly of stacking faults. Photoluminescence measurements performed at 7.5 K indicate that the band gap is 1.28 eV. Raman spectra reveal a strong polarized peak at 152 cm−1, which is believed to arise from the totally symmetric vibration of the Se atoms in the lattice.
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73.61.Ey III-V semiconductors
78.30.Hv Other nonmetallic inorganics
78.55.Et II-VI semiconductors

Energy band lineup at the porous‐silicon/silicon heterointerface measured by electron spectroscopy

P. H. Hao, X. Y. Hou, F. L. Zhang, and Xun Wang

Appl. Phys. Lett. 64, 3602 (1994); http://dx.doi.org/10.1063/1.111212 (3 pages) | Cited 16 times

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The energy band gap of light‐emitting porous silicon is determined by high‐resolution electron energy loss spectroscopy, and the valence band edge of porous silicon with respect to its Fermi level is measured by ultraviolet photoelectron spectroscopy. By combining the results with that measured from clean Si, a picture of band lineup at the porous‐silicon/p‐Si heterointerface is proposed, in which 70% of the total band gap discontinuity occurs at the valence band edge.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

Lattice relaxation of nanostructured semiconductor pillars observed by high‐resolution x‐ray diffraction

Paul van der Sluis, Martin J. Verheijen, and Jan Haisma

Appl. Phys. Lett. 64, 3605 (1994); http://dx.doi.org/10.1063/1.111213 (3 pages) | Cited 10 times

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High resolution x‐ray diffraction is used to obtain two‐dimensional reciprocal space maps from two‐dimensional periodic arrays of small (<250 nm) semiconductor pillars. The pillars were made by etching an (001) oriented Si wafer that was epitaxially overgrown with Si1−xGex. The pillars were etched to such a depth that they have a Si bottom and a Si1−xGex top. The shape of the pillars and the lattice parameters in the pillars are determined by comparison of the measured maps with kinematical diffraction model calculations using separate Fourier transformation of the shape of the Si and Si1−xGex parts of the grating. It was found that in the pillars the Si1−xGex lattice was totally relaxed, whereas it was compressively strained prior to etching.
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61.05.cf X-ray scattering (including small-angle scattering)
61.05.cj X-ray absorption spectroscopy: EXAFS, NEXAFS, XANES, etc.
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Z‐contrast investigation of the ordered atomic interface of CoSi2/Si(001) layers

M. F. Chisholm, N. D. Browning, S. J. Pennycook, R. Jebasinski, and S. Mantl

Appl. Phys. Lett. 64, 3608 (1994); http://dx.doi.org/10.1063/1.111214 (3 pages) | Cited 10 times

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The atomic structure of mesotaxial CoSi2/Si(001) interfaces has been investigated by Z‐contrast scanning transmission electron microscopy. The directly interpretable images reveal a 2×1 ordered structure at the interface, which is clearly seen to involve a doubling of the periodicity of the interfacial Co atoms. From these high‐resolution images, we deduce a new structure model for the CoSi2/Si(001) interface.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)

Simulations for the high‐speed response of GaN metal‐semiconductor‐metal photodetectors

R. P. Joshi, A. N. Dharamsi, and J. McAdoo

Appl. Phys. Lett. 64, 3611 (1994); http://dx.doi.org/10.1063/1.111215 (3 pages) | Cited 40 times

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Results of our Monte Carlo computations for the dynamic response of GaN photodetectors are reported. Electron and hole transport, circuit loading, electric field effects, and the intensity dependence are all comprehensively included. The impulse transient compares favorably with a 0.25 μm GaAs metal‐semiconductor‐metal device. The performance is better at lower photoexcitation intensities, and improvements for higher intensities are possible by increasing the applied voltage and operating in the ballistic regime at electric fields around 150 kV/cm.
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72.40.+w Photoconduction and photovoltaic effects
85.60.Gz Photodetectors (including infrared and CCD detectors)
73.40.Sx Metal-semiconductor-metal structures

Thermal annealing effect on low temperature molecular beam epitaxy grown GaAs: Arsenic precipitation and the change of resistivity

J. K. Luo, H. Thomas, D. V. Morgan, and D. Westwood

Appl. Phys. Lett. 64, 3614 (1994); http://dx.doi.org/10.1063/1.111216 (3 pages) | Cited 18 times

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The post‐growth annealing effects on the electrical properties of low temperature (LT‐) GaAs grown by molecular beam epitaxy have been investigated. It was found that the resistivity of the LT‐GaAs layer increased exponentially with annealing temperature TA, resulting in an activation energy of 2.1 eV. This activation energy is related to the activation energy of arsenic precipitation. Based on hopping conduction theory, an As cluster density NT, has been estimated from the resistivities of the LT‐GaAs layers. The change of density of arsenic clusters with TA, was found to be of the form NT=NT0 exp(−T/T0), in agreement with values obtained by transmission electron microscopy measurements. The breakdown voltage of the LT‐GaAs layer remained almost unchanged as TA was increased up to 650 °C, but the breakdown characteristic became soft. The formation of As clusters is held responsible for the soft breakdown of the LT‐GaAs layer after annealing.
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73.61.Ey III-V semiconductors
73.50.Dn Low-field transport and mobility; piezoresistance
71.55.Eq III-V semiconductors

Strained state of Ge(Si) islands on Si: Finite element calculations and comparison to convergent beam electron‐diffraction measurements

S. Christiansen, M. Albrecht, H. P. Strunk, and H. J. Maier

Appl. Phys. Lett. 64, 3617 (1994); http://dx.doi.org/10.1063/1.111217 (3 pages) | Cited 126 times

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In this letter we present calculations by three‐dimensional finite element method and measurements by convergent beam electron diffraction of the displacement field resulting from misfitting Ge0.85Si0.25 islands on Si(001). A good agreement between the results of both methods indicates that the three‐dimensional finite element method is a reliable tool to calculate the strain, and thus the stress field, in such nanostructures. As a result both methods show that the substrate substantially takes part in the elastic relaxation process in such heteroepitaxial systems.
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61.66.Bi Elemental solids
61.05.jd Theories of electron diffraction and scattering
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
68.90.+g Other topics in structure, and nonelectronic properties of surfaces and interfaces; thin films and low-dimensional structures (restricted to new topics in section 68)

Strain effects on the energy bands of ZnSe films grown on GaAs substrates by spectroscopic ellipsometry

R. Dahmani, L. Salamanca‐Riba, N. V. Nguyen, D. Chandler‐Horowitz, and B. T. Jonker

Appl. Phys. Lett. 64, 3620 (1994); http://dx.doi.org/10.1063/1.111223 (3 pages) | Cited 1 time

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Room‐temperature spectroscopic ellipsometry measurements were carried out on ZnSe thin films grown on (001)GaAs substrates by molecular‐beam epitaxy for the study of the lattice mismatch‐induced strain at the interface. The magnitude of the absorption coefficient at the E0+Δ0 critical point is very sensitive to the strain in the film. The variation in the magnitude of the absorption coefficient is used to estimate the critical thickness for the onset of dislocation generation. Almost complete relaxation of the films was obtained for thicknesses higher than 500 nm. Also, the strain‐induced coupling between the valence subbands was found to cause additional shifting of the light‐hole subband.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.66.Fd III-V semiconductors
07.60.Fs Polarimeters and ellipsometers

Spontaneous modulation of composition in Ta‐Si films produced by pulsed laser deposition

V. Nevolin, E. Chubunova, I. Khabelashvili, Yu. Lebedinskii, A. Zenkevich, and O. B. Uvarov

Appl. Phys. Lett. 64, 3623 (1994); http://dx.doi.org/10.1063/1.111224 (3 pages)

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Ta‐Si films with different composition ratio were prepared by the pulsed laser deposition technique on a Si3N4/Si(100) substrate at room temperature. Cross‐sectional transmission electron spectroscopy (TEM) and Auger electron spectroscopy in combination with Rutherford backscattering spectroscopy were employed to investigate the deposited structures. As‐deposited films were found to be spontaneously modulated with composition along the growth direction, the period of the structure depending upon Si/Ta average composition ratio, and is about 50 Å in thickness. Auger electron spectroscopy analysis confirms the codeposited Ta‐Si layers reveal an oscillating character of the chemical bonding. The contrast analysis of cross‐sectional TEM images and the study of electron‐diffraction patterns identify amorphous state (up to the resolution of analytical technique) of the deposited layers. The observed effect is attributed to the nature of the depositing flux.
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81.15.Fg Pulsed laser ablation deposition
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

High‐resolution x‐ray characterization of low‐temperature GaAs/As superlattice grown by molecular‐beam epitaxy

T. M. Cheng, C. Y. Chang, T. C. Chang, J. H. Huang, and M. F. Huang

Appl. Phys. Lett. 64, 3626 (1994); http://dx.doi.org/10.1063/1.111225 (3 pages) | Cited 3 times

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High‐resolution x‐ray analysis of Si delta‐doped GaAs grown by molecular‐beam epitaxy at a low substrate temperature (230 °C) is presented. Superlattice satellite peaks in the rocking curve are observed for the sample annealed at 700 °C for 10 min. The peak intensity increases with increasing postgrowth annealing temperature and reaches the maximum value for the 900 °C annealed sample. The evolution of the x‐ray rocking curves can be explained consistently by the formation of a GaAs/As superlattice during the annealing period based on the transmission electron microscope observations.
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61.05.cf X-ray scattering (including small-angle scattering)
61.05.cj X-ray absorption spectroscopy: EXAFS, NEXAFS, XANES, etc.
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Influence of strain on interfacial recombination in AlGaInP/GaInP double heterostructures

K. Domen, M. Kondo, and T. Tanahashi

Appl. Phys. Lett. 64, 3629 (1994); http://dx.doi.org/10.1063/1.111226 (2 pages) | Cited 2 times

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Using time‐resolved photoluminescence, we examined the carrier‐recombination process in strained AlGaInP/GaInP double heterostructures grown by metal‐organic vapor phase epitaxy. We found that interfacial recombination dominates the process at room temperature, and that the interfacial recombination is enhanced by tensile strain and reduced by compressive strain.
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78.47.-p Spectroscopy of solid state dynamics
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Study of the first‐stage relaxation in ZnTe/(001)CdTe strained layers

J. Eymery, S. Tatarenko, N. Bouchet, and K. Saminadayar

Appl. Phys. Lett. 64, 3631 (1994); http://dx.doi.org/10.1063/1.111227 (3 pages) | Cited 10 times

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The first stages of the growth of highly strained ZnTe on (001) CdTe are studied in details by reflection high‐energy electron diffraction analysis. Below the critical thickness, small lattice oscillations attributed to a nontetragonal elastic distortion are observed on a system in tensile stress. An effect of Zn excess pressure on the critical thickness is demonstrated. Exposure at 280 °C of the CdTe(001) surface under Zn flux leads to the formation of a c(2×2) Zn terminated surface with about 50% Zn coverage. Such a pretreatment reduces the critical thickness by about half a monolayer.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)

Hybrid Shubnikov–de Haas‐photoluminescence analysis of two‐dimensional electron density in strained quantum well structures with heavily doped contact layers

Michael L. Lovejoy, Jerry A. Simmons, Pin Ho, and Paul A. Martin

Appl. Phys. Lett. 64, 3634 (1994); http://dx.doi.org/10.1063/1.111228 (3 pages) | Cited 1 time

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A hybrid analysis technique is presented to accurately extract the two‐dimensional (2D) electron density of PHEMT structures in which multiple subbands are occupied and severe parallel conduction by heavily doped contact layers occurs. Complications due to shorted Hall voltages by the parallel contact layer, which precludes simple Hall analysis, and to multiple subband occupation, which requires high magnetic‐field sweeps in Shubnikov–de Haas (SdH) measurements, are eliminated by this hybrid analysis that combines SdH measurements with photoluminescence measurements to extract the total 2D density. Comparisons with other methods demonstrate the high accuracy of this new technique.
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85.30.Tv Field effect devices
78.55.-m Photoluminescence, properties and materials
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

Gap‐state measurements on diamond‐like carbon films

T. Mandel, M. Frischholz, R. Helbig, and A. Hammerschmidt

Appl. Phys. Lett. 64, 3637 (1994); http://dx.doi.org/10.1063/1.111955 (3 pages) | Cited 13 times

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A high frequency capacitance‐voltage method is used to measure the electronic gap‐state density in diamond‐like carbon (DLC) films. The gap‐state density is derived from the analysis of high frequency capacitance‐voltage characteristics of DLC on crystalline silicon (c‐Si) heterojunctions. Near the Fermi level the gap‐state density in the DLC thin film is obtained of the order 1016 cm−3 eV−1. Furthermore, the energy‐band diagram of a DLC/c‐Si heterojunction is evaluated, and the work function of DLC is derived to be 3.6 eV.
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61.41.+e Polymers, elastomers, and plastics
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.61.Cw Elemental semiconductors
81.40.Rs Electrical and magnetic properties related to treatment conditions

Overcoming the pseudomorphic critical thickness limit using compliant substrates

C. L. Chua, W. Y. Hsu, C. H. Lin, G. Christenson, and Y. H. Lo

Appl. Phys. Lett. 64, 3640 (1994); http://dx.doi.org/10.1063/1.111229 (3 pages) | Cited 17 times

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We demonstrated the high‐quality molecular beam epitaxy growth of exceedingly thick In0.14Ga0.86As pseudomorphic layers on thin, free‐standing, compliant GaAs substrates. We first fabricated 800‐Å‐thick compliant platforms before growing a lattice‐mismatched layer on the platform. The layer we grew exceeds its usual critical thickness by about twenty times without strain relaxation. X‐ray analysis confirms a shift in the InGaAs peaks grown on the compliant substrate, indicating an unrelaxed strain of 0.9%. Moreover, atomic force microscope profiles verify that layers grown on compliant substrates are much smoother than layers grown on a plain substrate.
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68.55.-a Thin film structure and morphology
68.60.-p Physical properties of thin films, nonelectronic
81.20.-n Methods of materials synthesis and materials processing

Dry patterning of InGaN and InAlN

S. J. Pearton, C. R. Abernathy, and F. Ren

Appl. Phys. Lett. 64, 3643 (1994); http://dx.doi.org/10.1063/1.111230 (3 pages) | Cited 24 times

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Dry etch rates of InxGa1−xN and InxAl1−xN alloys are found to increase with In mole fraction in CH4/H2 microwave (2.45 GHz) discharges, and to decrease under the same conditions in Cl2/H2 mixtures. Both plasma chemistries produce smooth anisotropic etching across the entire composition range from InN to either GaN or AlN. Addition of SF6, rather than H2, to a Cl2 discharge produces faster etch rates and retains smooth morphologies. This suggests that either atomic hydrogen or fluorine is capable of effective removal of N from the III‐V nitride materials. Ar+ ion milling rates for InGaAlN alloys are found to be approximately a factor of 2 lower than for more conventional III‐V semiconductors like GaAs.
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71.55.Eq III-V semiconductors
72.80.Ey III-V and II-VI semiconductors

Ferroelectric/superconductor PbZr0.52Ti0.48O3/Y1Ba2Cu3O7−x/LaAlO3 heterostructure prepared by Nd:YAG pulsed laser deposition

C. Björmander, A. M. Grishin, B. M. Moon, J. Lee, and K. V. Rao

Appl. Phys. Lett. 64, 3646 (1994); http://dx.doi.org/10.1063/1.111191 (3 pages) | Cited 21 times

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Ferroelectric/superconductor PbZr0.52Ti0.48O3/Y1Ba2 Cu3O7−x heterostructures have been grown on single‐crystal LaAlO3 in a Nd:YAG pulsed laser deposition system. The cuprate superconductor is used as the metallic electrode for polarizing the lead zirconate titanate (PZT) layer. X‐ray diffraction and rocking curve data evidence almost epitaxial growth of both the PZT (≊4500 Å) and the (YBCO) (≊2500 Å) layers on LaAlO3 substrates. Ferroelectric measurements yield remnant polarization values (at 177 kV/cm) of 29 μC/cm2, and coercive fields in the range of 70–85 kV/cm. The electrical resistivity of the PZT layer is determined to be 5×108 Ω cm. The electrical resistivity data for the YBCO underlayer even in the presence of the PZT overlayer yields Tc=89.5 K with a transition width of δT=1 K. In summary, excellent characteristics of coexisting superconducting and ferroelectric properties have been achieved in laser deposited PZT/YBCO/LaAlO3 heterostructures. As far as we know this is the first time such a result has been obtained by using a Nd:YAG pulsed laser deposition technique.
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74.78.-w Superconducting films and low-dimensional structures
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.40.-c Electronic transport in interface structures

Surface degradation of superconducting YBa2Cu3O7−δ thin films

S. E. Russek, S. C. Sanders, A. Roshko, and J. W. Ekin

Appl. Phys. Lett. 64, 3649 (1994); http://dx.doi.org/10.1063/1.111192 (3 pages) | Cited 22 times

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The surface degradation of c‐axis oriented YBa2Cu3O7−δ thin films due to air, CO2, N2, O2, and vacuum exposure has been studied with reflection high‐energy electron diffraction (RHEED), scanning tunneling microscopy, and contact resistivity measurements. The formation of an amorphous surface reaction layer upon exposure to air and CO2 is monitored with RHEED and correlated with an increase in contact resistivity. The contact resistivity of samples exposed to air increases with time t as ρc = (1.0 × 10−7 Ω cm2)e√t/640 min. Surfaces exposed to CO2 show a similar degradation while surfaces exposed to N2 showed a slightly different degradation mechanism. Vacuum exposed surfaces how little increase in contact resistivity, indicating no long‐term surface oxygen loss.
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74.78.-w Superconducting films and low-dimensional structures
73.40.Ns Metal-nonmetal contacts
73.40.Cg Contact resistance, contact potential
74.72.-h Cuprate superconductors

Giant magnetic field dependent impedance of amorphous FeCoSiB wire

R. S. Beach and A. E. Berkowitz

Appl. Phys. Lett. 64, 3652 (1994); http://dx.doi.org/10.1063/1.111170 (3 pages) | Cited 203 times

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The impedance of an amorphous Fe4.3Co68.2Si12.5B15 wire (100 μm diameter) exhibits an extraordinarily large frequency dependent resistance in addition to the previously reported frequency dependent wire reactance. The frequency response of both the resistance and reactance is almost entirely suppressed by an axial magnetic field HA<150 Oe, resulting in a typical magnetoresistance for frequencies f<1 MHz of the order of the dc wire resistance. The magnetoresistance at f=1 MHz is ΔR/Rsat=370%. As the bulk of the magnetic response occurs for HA<5 Oe, this system shows great technological promise. We give a quantitative analysis of the phenomenon, which is rooted in classical electrodynamics.
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72.15.Cz Electrical and thermal conduction in amorphous and liquid metals and alloys
72.15.Gd Galvanomagnetic and other magnetotransport effects
75.50.Kj Amorphous and quasicrystalline magnetic materials
85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.

Low threshold and broad tunability of an organic optical parametric oscillator

D. Josse, S. Khodja, J. Badan, I. D. W. Samuel, and J. Zyss

Appl. Phys. Lett. 64, 3655 (1994); http://dx.doi.org/10.1063/1.111171 (3 pages) | Cited 2 times

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Optical parametric oscillation in the molecular organic crystal NPP [N‐(4‐nitrophenyl)‐L‐prolinol] is reported at a pumping wavelength of 670 nm with pulse duration of 60 ns, and improved performance over the earlier demonstration at 592.7 nm pump wavelength (pulse duration 1 ns). The pumping scheme is simplified, the oscillation threshold substantially decreased by more than an order of magnitude to 0.5 MW/cm2, with the benefit of an increasingly wavelength noncritical configuration as the pump wavelength is shifted towards the infrared.
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42.70.Jk Polymers and organics
33.80.Be Level crossing and optical pumping

Anomalous photoresponse of thick bismuth films to pulsed laser excitation

J. C. G. de Sande, M. Sánchez Balmaseda, and J. M. Guerra Pérez

Appl. Phys. Lett. 64, 3658 (1994); http://dx.doi.org/10.1063/1.111172 (3 pages)

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Current‐biased 4.3‐μm Bi films give an anomalous photoresponse when they are illuminated with 20‐ns 1.064‐μm laser pulses. The films resistivity decreases during irradiation. This observation excludes a simple bolometric process as a cause for the induced transients and supports the prediction of a previously reported model which required the optical pumping of carriers into a metastable band.
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72.40.+w Photoconduction and photovoltaic effects
72.15.Eb Electrical and thermal conduction in crystalline metals and alloys
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.50.Pz Photoconduction and photovoltaic effects

Deformation induced crystallization due to instability in amorphous FeZr alloys

M. L. Trudeau

Appl. Phys. Lett. 64, 3661 (1994); http://dx.doi.org/10.1063/1.111953 (3 pages) | Cited 12 times

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Recently, it was shown that mechanical deformation processes can completely crystallize some amorphous transition‐metal–metalloid alloys. However, the mechanism is still unclear. We demonstrate here that, for the simpler amorphous Fe90Zr10 alloy, the basic thermodynamic differences between high‐energy milling and rapid quenching, associated with a crystallization controlled by elemental diffusion, could be behind this structural transformation.
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61.43.Dq Amorphous semiconductors, metals, and alloys
81.40.Lm Deformation, plasticity, and creep
64.60.My Metastable phases

Nonlinearity and inversion of femtosecond single‐ and two‐photon photoelectric emission sensitivities from gold

J. P. Girardeau‐Montaut, C. Girardeau‐Montaut, S. D. Moustaizis, and C. Fotakis

Appl. Phys. Lett. 64, 3664 (1994); http://dx.doi.org/10.1063/1.111173 (3 pages) | Cited 5 times

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We report measurements of the two‐photon photoemission sensitivity of gold at 496 nm, for three incidence angles of a p‐polarized laser beam, with a 450‐fs pulse duration, produced by a KrF pumped dye laser. The nonlinear growing of the photoelectric efficiency versus the laser peak intensity, in the range of 5–9 GW/cm2, is demonstrated to be consecutive to the thermal nonequilibrium between the electrons and the lattice at the surface of the metal. We also observe with a solid that the single‐photon photoelectric sensitivity, measured by us previously, can be lower than the one for the two‐photon process, when the incident laser intensity is high enough. The crossing point of respective sensitivities for 248‐ and 496‐nm laser radiations is about 5.5×10−6 A/W and corresponds to a laser intensity of about 6.5 GW/cm2. This effect, which can be only observed with ultrashort laser pulses, represents a significant step towards the realization of very high brightness electron beams.
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79.60.Bm Clean metal, semiconductor, and insulator surfaces
79.20.Ds Laser-beam impact phenomena
FREE

Erratum: ‘‘Spatial hole burning and self‐focusing in vertical‐cavity surface‐emitting laser diodes’’ [Appl. Phys. Lett. 64, 542 (1994)]

G. C. Wilson, D. M. Kuchta, J. D. Walker, and J. S. Smith

Appl. Phys. Lett. 64, 3667 (1994); http://dx.doi.org/10.1063/1.112002 (1 page)

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Abstract Unavailable
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42.25.Fx Diffraction and scattering
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
99.10.Cd Errata
FREE

Erratum: ‘‘Current‐voltage characteristics and interface state density of GaAs Schottky barrier’’ [Appl. Phys. Lett. 62, 2560 (1993)]

Keiji Maeda, Hideaki Ikoma, Kenji Sato, and Toshiki Ishida

Appl. Phys. Lett. 64, 3667 (1994); http://dx.doi.org/10.1063/1.112001 (1 page)

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Abstract Unavailable
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73.20.At Surface states, band structure, electron density of states
73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
99.10.Cd Errata
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