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Appl. Phys. Lett. 64, 339 (1994); http://dx.doi.org/10.1063/1.111168 (3 pages)
High quality aluminum nitride epitaxial layers grown on sapphire substrates
(Received 22 July 1993; accepted 5 November 1993)
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Add to FacebookIn this letter we report the growth of high quality AlN epitaxial layers on sapphire substrates. The AlN grown on (00⋅1) sapphire exhibited a better crystalline quality than that grown on (01⋅2) sapphire. An x‐ray rocking curve of AlN on (00⋅1) Al2O3 yielded a full width at half‐maximum of 97.2 arcsec, which is the narrowest value reported to our knowledge. The AlN peak on (01⋅2) Al2O3 was about 30 times wider. The absorption edge measured by ultraviolet transmission spectroscopy for AlN grown on (00⋅1) Al2O3 was about 197 nm.
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