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Applied Physics Letters / Volume 64 / Issue 3

Appl. Phys. Lett. 64, 342 (1994); http://dx.doi.org/10.1063/1.111169 (3 pages)

Delineation of semiconductor doping by scanning resistance microscopy

C. Shafai1, D. J. Thomson1, M. Simard‐Normandin2, G. Mattiussi3, and P. J. Scanlon3

1Department of Electrical Engineering, University of Manitoba, Winnipeg, Manitoba, Canada R3T 2N2
2Northern Telecom Limited, Ottawa, Ontario, Canada, K1Y 4H7
3Department of Physics, Queens University, Kingston, Ontario, Canada, K7L 3N6

(Received 15 June 1993; accepted 7 November 1993)

A new technique for the two‐dimensional delineation of P‐N junctions is presented using a scanning resistance microscope (SRM). The SRM uses a conducting probe to perform localized resistance measurements over a surface. These measurements are used to delineate between regions of different doping type and concentration. By using contact forces of 10−4 N, the contact area is estimated to be 30 nm. Experiments have shown the SRM capable of junction delineation with a lateral spacial resolution of less than 35 nm. In addition, during resistance measurements the SRM performs simultaneous surface topography measurements.  

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KEYWORDS and PACS

Keywords

P−N JUNCTIONS, DOPING PROFILES, SPATIAL RESOLUTION, MEASURING METHODS, MICROSCOPY, ELECTRIC CONDUCTIVITY, CARRIER DENSITY, TOPOLOGY, SURFACE CONDUCTIVITY

PACS

  • 68.37.Ef

    Scanning tunneling microscopy (including chemistry induced with STM)

  • 68.37.Ps

    Atomic force microscopy (AFM)

  • 68.37.Rt

    Magnetic force microscopy (MFM)

  • 68.37.Uv

    Near-field scanning microscopy and spectroscopy

  • 68.55.Ln

    Defects and impurities: doping, implantation, distribution, concentration, etc.

  • 85.30.De

    Semiconductor-device characterization, design, and modeling

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.111169

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

For access to fully linked references, you need to log in.
    S. Hosaka, S. Hosoki, K. Takata, K. Horiuchi, and N. Natsuaki, Appl. Phys. Lett. 53, 487 (1988APPLAB000053000006000487000001).

    P. Muralt, Appl. Phys. Lett. 49, 1441 (1986APPLAB000049000021001441000001).

    T. P. Weihs, Z. Nawaz, S. P. Jarvis, and J. B. Pethica, Appl. Phys. Lett. 59, 3536 (1991APPLAB000059000027003536000001).


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