APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

24 Jan 1994

Volume 64, Issue 4, pp. 397-529

Page 1 of 2 Pages Next Page | Jump to Page

cw He‐Kr+ laser with transverse radio frequency excitation

N. Reich, J. Mentel, G. Jakob, and J. Mizeraczyk

Appl. Phys. Lett. 64, 397 (1994); http://dx.doi.org/10.1063/1.111159 (3 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
A cw He‐Kr+ laser was excited with a capacitively coupled transverse radio frequency discharge. The laser was operated in a simple 40‐cm active length alumina oxide tube which ends off via ceramic glass transitions in Brewster windows. Transformation of the laser discharge tube impedance to the 50 Ω output resistance of the rf source and symmetrization of the rf voltage were performed by a special matching network. cw lasing was obtained at 469.4, 458.3, 438.7, and 431.8 nm. The output power of all lines amounts to 35 mW at an input power of 600 W. The rms noise of the laser intensity did not exceed 0.6%.
Show PACS
42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.-v Laser optical systems: design and operation
52.80.Pi High-frequency and RF discharges

Photocurrent spectroscopy of Bragg mirrors in vertical cavity surface emitting lasers

J. W. Bae, H. Temkin, C. Parsons, W. E. Quinn, P. Brusenbach, M. Kim, T. Uchida, and S. E. Swirhun

Appl. Phys. Lett. 64, 400 (1994); http://dx.doi.org/10.1063/1.111160 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
We describe a simple technique to precisely measure the reflectivity spectra of the Bragg mirrors in individual vertical cavity surface emitting lasers. Detailed reflectivity spectra are obtained by measuring the response of the active layer junction to light impinging upon the output mirror, corrected by the active layer response spectrum. Precise measurements of the emission spectrum of the laser with respect to the Fabry–Perot notch are then possible. In the temperature range of 20–100 °C we measure the rates of 0.56 and 0.62Å/°C for the mirror stack and the lasing wavelength, respectively.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Improved modulator characteristics using tensile strain in long‐wavelength InGaAs/InGaAsP multiple quantum wells

T. Tütken, B. J. Hawdon, M. Zimmermann, I. Queisser, A. Hangleiter, V. Härle, and F. Scholz

Appl. Phys. Lett. 64, 403 (1994); http://dx.doi.org/10.1063/1.111161 (2 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
We have measured the field dependent Stark shift and exciton oscillator strength in tensile strained, compressively strained, and unstrained 1.5 μm InGaAs/InGaAsP modulator structures. We find that the exciton oscillator strength is much less field dependent for tensile strained structures, which operate at the light hole transition. We conclude that tensile strained structures should lead to improved modulator performance.
Show PACS
78.66.Fd III-V semiconductors
78.20.Jq Electro-optical effects
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.79.Hp Optical processors, correlators, and modulators

GaAs/InGaAs/AlGaAs optoelectronic switch in avalanche heterojunction phototransistor vertically integrated with a resonant cavity

F. Y. Huang and H. Morkoç

Appl. Phys. Lett. 64, 405 (1994); http://dx.doi.org/10.1063/1.111162 (3 pages) | Cited 13 times

Full Text: | Download PDF

Show Abstract
An optoelectronic switch with high sensitivity based on avalanche multiplication is demonstrated in a GaAs/InGaAs/AlGaAs heterojunction bipolar phototransistor (HPT) with an integrated resonant cavity. The device, similar to a resonant‐cavity enhanced HPT, consists of a four layer n+‐p+‐i‐n structure. Excellent electrical switching characteristics with a high control voltage efficiency (Vs/Vh) of 1.8 have been obtained when the device is operated in the dark. The device can be switched optically at a selected wavelength owing to the integrated resonant cavity. By exploiting the inherent high optical gain, an extremely high optical control sensitivity (∂Vs/∂P0), exceeding 6 V/μW, has been achieved.  
Show PACS
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
85.60.Dw Photodiodes; phototransistors; photoresistors
42.65.Pc Optical bistability, multistability, and switching, including local field effects

Spatial solitons in photorefractive Bi12TiO20 with drift mechanism of nonlinearity

M. D. Iturbe Castillo, P. A. Marquez Aguilar, J. J. Sanchez‐Mondragon, S. Stepanov, and V. Vysloukh

Appl. Phys. Lett. 64, 408 (1994); http://dx.doi.org/10.1063/1.111163 (3 pages) | Cited 120 times

Full Text: | Download PDF

Show Abstract
The analysis performed shows that in cubic photorefractive crystals (of Bi12SiO20 and GaAs type in particular) with drift (‘‘quasilocal’’) mechanism of optical nonlinearity spatial soliton propagation can be observed for reasonable external dc electric fields 10–15 kV/cm. These photorefractive solitons which can be excited at very low cw laser power are stable in a broad region of signal(soliton)/incoherent(spatially uniform) intensity ratio, and allow easy switching from bright to dark type. Original experimental results of self‐channeling of submicrowatt HeNe laser beam in a cubic Bi12TiO20 sample under external dc field are presented.
Show PACS
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.65.Tg Optical solitons; nonlinear guided waves

Quantum well lasers with carbon doped cladding layers grown by solid source molecular beam epitaxy

M. Micovic, P. Evaldsson, M. Geva, G. W. Taylor, T. Vang, and R. J. Malik

Appl. Phys. Lett. 64, 411 (1994); http://dx.doi.org/10.1063/1.111164 (3 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
Data are presented which demonstrate that very high quality carbon (C) doped epilayers for the fabrication of AlGaAs‐GaAs and AlGaAs‐GaAs‐InGaAs quantum well (QW) lasers can be grown by solid source molecular beam epitaxy (MBE) using a resistively heated graphite filament as a p‐type dopant source. Broad area lasers fabricated from this material exhibit very low threshold current densities (66 A/cm2 for a 2‐mm‐long single QW AlGaAs‐GaAs‐InGaAs laser emitting at 980‐nm wavelength). It is also shown that lasers with carbon doped cladding layers grown on either n+ or p+ substrates exhibit similar low threshold current densities. These C‐doped lasers are expected to have improved long term reliability compared to conventional Be‐doped laser structures.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Detection of in‐plane and out‐of‐plane ultrasonic displacements by a two‐channel confocal Fabry–Perot interferometer

A. Cand, J.‐P. Monchalin, and X. Jia

Appl. Phys. Lett. 64, 414 (1994); http://dx.doi.org/10.1063/1.111141 (3 pages) | Cited 10 times

Full Text: | Download PDF

Show Abstract
Simultaneous detection of in‐plane and out‐of‐plane ultrasonic displacements by a two‐channel confocal Fabry–Perot optical receiver is described. Accuracy is tested by measuring the in‐plane and out‐of‐plane displacements produced by Rayleigh surface waves generated by a piezoelectric transducer and a laser.
Show PACS
43.35.Yb Ultrasonic instrumentation and measurement techniques
43.35.Zc Use of ultrasonics in nondestructive testing, industrial processes, and industrial products
07.60.Ly Interferometers

1 000 000 °C/s thin film electrical heater: In situ resistivity measurements of Al and Ti/Si thin films during ultra rapid thermal annealing

L. H. Allen, G. Ramanath, S. L. Lai, Z. Ma, S. Lee, D. D. J. Allman, and K. P. Fuchs

Appl. Phys. Lett. 64, 417 (1994); http://dx.doi.org/10.1063/1.111116 (3 pages) | Cited 25 times

Full Text: | Download PDF

Show Abstract
We introduce a new technique for rapidly heating (106 °C/s) thin films using an electrical thermal annealing (ETA) pulse technique. By applying a high‐current dc electrical pulse to a conductive substrate‐heater material (Si), joule heating occurs thus heating the thin film. This method was demonstrated by heating thin films of aluminum at rates ranging from 103 to 106 °C/s. The temperature of the system is measured by using the substrate heater as a thermistor and is found to be within ≊±10 °C during anneals at ≊105 °C/s. Phase transformations in the Ti‐Si system were also observed using in situ resistivity measurements during ETA at ≊104 °C.
Show PACS
72.20.Ht High-field and nonlinear effects
73.40.-c Electronic transport in interface structures
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

New observation on thin discontinuous metal films

Eva Hedborg, Fredrik Winquist, and Ingemar Lundström

Appl. Phys. Lett. 64, 420 (1994); http://dx.doi.org/10.1063/1.111117 (2 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
It is shown from the capacitance‐voltage curves of metal‐insulator‐semiconductor structures that molecular species in an electrolyte interact with thin discontinuous, hydrophobic platinum films in a way similar to that in a gas phase. It is suggested that this is due to the presence of air volumes in the cracks of the discontinuous metal. This suggestion is supported by theoretical models for the wetting of thin films. The observation may have implications for the use of thin metal layers as the sensing material in chemical sensors for molecular species in solutions.
Show PACS
82.80.Yc Rutherford backscattering (RBS), and other methods of chemical analysis
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
85.30.Tv Field effect devices
68.08.Bc Wetting
FREE

Mesoscopic self‐assembly of gold islands on diblock‐copolymer films

T. L. Morkved, P. Wiltzius, H. M. Jaeger, D. G. Grier, and T. A. Witten

Appl. Phys. Lett. 64, 422 (1994); http://dx.doi.org/10.1063/1.111118 (3 pages) | Cited 55 times

Full Text: | Download PDF

Show Abstract
We describe the fabrication and characterization of self‐assembled gold island arrays on diblock‐copolymer thin films. The natural tendency of these polymers to form ordered phases is used to induce selective aggregation of evaporated gold metal during an annealing process. We obtain well‐defined, nanoscale island arrays aligned with one of the copolymer blocks. Near perfect segregation is achieved between the two domains. Two types of diblock‐copolymer systems are discussed, together with the resulting island patterns.
Show PACS
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
81.05.Rm Porous materials; granular materials
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Pyrolytic laser assisted chemical vapor deposition of Al from dimethylethylamine‐alane: Characterization and a new two‐step writing process

Jaesung Han, Klavs F. Jensen, Yoshihide Senzaki, and Wayne L. Gladfelter

Appl. Phys. Lett. 64, 425 (1994); http://dx.doi.org/10.1063/1.111119 (3 pages) | Cited 10 times

Full Text: | Download PDF

Show Abstract
We describe pyrolytic laser assisted chemical vapor deposition of Al from dimethylethylamine‐alane with 514‐nm radiation from an Ar ion laser. High purity Al lines with resistivity close to bulk Al are reported for a range of operating conditions. The relationship between operating parameters and materials properties of the deposited lines is delineated. Results from deposition on different substrates, Pt, Au, W, and Si, provide insight into thermal and nucleation effects in the laser writing process. Based on the observed nucleation behavior, we demonstrate a two‐step fast writing process involving fast laser nucleation of lines, followed by selective chemical vapor deposition of Al on the nucleated pattern.
Show PACS
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.50.Bc Processes caused by infrared radiation
82.50.Hp Processes caused by visible and UV light

c‐axis preferred orientation of laser ablated epitaxial PbTiO3 films and their electrical properties

Hitoshi Tabata, Osamu Murata, Tomoji Kawai, Shichio Kawai, and Masanori Okuyama

Appl. Phys. Lett. 64, 428 (1994); http://dx.doi.org/10.1063/1.111120 (3 pages) | Cited 28 times

Full Text: | Download PDF

Show Abstract
Ferroelectric PbTiO3 epitaxial thin films have been formed on a base electrode of Pt(100)/MgO(100) using ArF excimer laser ablation. The x‐ray diffraction patterns of these films show c‐axis orientation with a rocking angle of 0.5 when the film is cooled faster than 75 °C/min after the deposition. The films exhibit clear and large ferroelectric hysteresis loops. The dielectric constant of the films is 130 and remnant polarization is 80 μC/cm2. The values are almost the same as those theoretically predicted. The pyroelectric coefficient of these films is 1000–1500 V/W at 10 Hz, even without poling treatment.
Show PACS
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
68.55.-a Thin film structure and morphology
81.15.Fg Pulsed laser ablation deposition

Formation of AlCuFe quasicrystalline thin films by solid state diffusion

T. Klein and O. G. Symko

Appl. Phys. Lett. 64, 431 (1994); http://dx.doi.org/10.1063/1.111944 (3 pages) | Cited 41 times

Full Text: | Download PDF

Show Abstract
We show that thin films 3000 Å in thickness of the icosahedral AlCuFe phase can be formed by solid state diffusion of sputtered Al, Cu, and Fe layers. As for bulk materials, we propose that the icosahedral phase grows by diffusion of the Cu in the Al3Fe layer previously formed by interdiffusion of the Al and Fe layers. These films present high resistivity values comparable to those obtained in bulk samples of high structural quality.
Show PACS
61.44.Br Quasicrystals
81.15.Cd Deposition by sputtering
66.30.Fq Self-diffusion in metals, semimetals, and alloys

Application of x‐ray interference method for residual strain measurement in low energy Ar ion‐bombarded Si (001)

Cho‐Jen Tsai, Thad Vreeland, and Harry A. Atwater

Appl. Phys. Lett. 64, 434 (1994); http://dx.doi.org/10.1063/1.111945 (3 pages) | Cited 2 times

Full Text: | Download PDF

Show Abstract
We have employed the x‐ray interference method for measurement of the residual strains in Si (001) surfaces bombarded by low energy Ar+. This method, combined with transmission electron microscopy, permits determination of the average residual strain in very thin bombarded layers. The residual strain in the bombarded layers was found to monotonically increase as the density of pointlike defects increases and saturates upon the formation of extended defects. Annealing data also suggest that defects formed by low energy ion bombardment at moderate temperature (≊450 °C) require high temperature (≳800 °C) annealing for their removal.
Show PACS
61.05.cf X-ray scattering (including small-angle scattering)
61.05.cj X-ray absorption spectroscopy: EXAFS, NEXAFS, XANES, etc.
61.80.Jh Ion radiation effects
81.65.-b Surface treatments
68.35.B- Structure of clean surfaces (and surface reconstruction)

Density of amorphous Si

J. S. Custer, Michael O. Thompson, D. C. Jacobson, J. M. Poate, S. Roorda, W. C. Sinke, and F. Spaepen

Appl. Phys. Lett. 64, 437 (1994); http://dx.doi.org/10.1063/1.111121 (3 pages) | Cited 91 times

Full Text: | Download PDF

Show Abstract
The density of amorphous Si has been measured. Multiple Si implants, at energies up to 8.0 MeV, were made through a contact mask to produce alternating amorphous/crystalline Si stripes with amorphous thicknesses up to ∼5.0 μm. For layers up to 3.4 μm (5 MeV), the amorphous Si is constrained laterally and deforms plastically. Above 5 MeV, plastic deformation of the surrounding crystal matrix is observed. Height differences between the amorphous and crystalline regions were measured for as‐implanted, thermally relaxed, and partially recrystallized samples using a surface profilometer. Combined with ion channeling measurements of the layer thickness, amorphous Si was determined to be 1.8±0.1% less dense than crystalline Si (4.90×1022 atom/cm3 at 300 K). Both relaxed and unrelaxed amorphous Si show identical densities within experimental error (<0.1% density difference).
Show PACS
61.43.Dq Amorphous semiconductors, metals, and alloys
61.80.Jh Ion radiation effects

Strain characterization of CoSi2/n‐Si0.9Ge0.1/p‐Si heterostructures

O. Nur, M. Willander, H. H. Radamson, M. R. Sardela, G. V. Hansson, C. S. Petersson, and K. Maex

Appl. Phys. Lett. 64, 440 (1994); http://dx.doi.org/10.1063/1.111122 (3 pages) | Cited 10 times

Full Text: | Download PDF

Show Abstract
We report on the structural characterization of CoSi2/n‐Si0.9Ge0.1/p‐Si heterostructures. Silicon molecular beam epitaxy is combined with Co sputtering to obtain these structures. The strain in the Si1−xGex is investigated after the formation of the CoSi2 by using high‐resolution x‐ray diffraction mapping in reciprocal space and cross‐sectional transmission electron microscopy. The results show that in order to keep the strain in Si1−xGex unaffected, a sacrificial Si layer is needed. It was possible to obtain transistor action, but with low‐current gain (β).
Show PACS
85.30.Pq Bipolar transistors
68.55.-a Thin film structure and morphology
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Ns Metal-nonmetal contacts

Enhancement of optical absorption induced by disorder in three‐dimensional random superlattices

E. G. Wang, J. H. Xu, W. P. Su, and C. S. Ting

Appl. Phys. Lett. 64, 443 (1994); http://dx.doi.org/10.1063/1.111123 (3 pages) | Cited 11 times

Full Text: | Download PDF

Show Abstract
The effect of disorder on the optical absorption of the realistic random superlattice has been investigated based on a three‐dimensional tight‐binding Hamiltonian. It is found that the absorption intensity close to the band edge of the random superlattice is considerably enhanced, which can be explained by optical matrix elements of the relevant eigenfunctions localized strongly over 2–4 monolayers. An energy‐level crossing behavior at the conduction‐band bottom is also obtained.
Show PACS
78.66.Fd III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.35.+c Brillouin and Rayleigh scattering; other light scattering

Mechanism of the growth of native oxide on hydrogen passivated silicon surfaces

M. L. W. van der Zwan, J. A. Bardwell, G. I. Sproule, and M. J. Graham

Appl. Phys. Lett. 64, 446 (1994); http://dx.doi.org/10.1063/1.111124 (2 pages) | Cited 15 times

Full Text: | Download PDF

Show Abstract
The native oxide growth in water on HF etched, hydrogen passivated silicon surfaces has been studied by 18O labeling techniques, with analysis by secondary ion mass spectrometry, Fourier transform infrared spectroscopy, and x‐ray photoelectron spectroscopy. It is shown that ≳85% of the oxygen in the native oxide originates from H2O and not from dissolved O2. The role of the dissolved O2/H2O couple is to anodically polarize the electrode, thus driving the H2O/Si‐oxide reaction.
Show PACS
81.65.-b Surface treatments
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Numerical study of temperature effect on carrier dynamics in multiple quantum well narrow wires

Akira Endoh, Hiroshi Arimoto, Yoshihiro Sugiyama, Hideki Kitada, and Shunichi Muto

Appl. Phys. Lett. 64, 448 (1994); http://dx.doi.org/10.1063/1.111125 (3 pages) | Cited 2 times

Full Text: | Download PDF

Show Abstract
To clarify the effect of temperature on the wire width dependence of the photoluminescence (PL) decay time in multiple quantum well narrow wires, we performed numerical calculations of carrier dynamics using a simple damage model in which nonradiative recombination centers caused by fabrication damage near the wire sidewalls are considered. The drastic reduction of PL decay time around a 100‐nm‐wide wire at low temperature is explained by our damage model by the presence of an optically inactive layer, i.e., a so‐called ‘‘dead layer’’ in which carriers vanish almost immediately due to heavy damage before reaching the sidewall. Our calculations show that the length of the ‘‘dead layer’’ changes with temperature even though the length of the damaged layer, in which defects are formed during fabrication process, is independent of temperature.
Show PACS
78.55.-m Photoluminescence, properties and materials
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Dominant free‐exciton recombination radiation in chemical vapor deposited diamonds

Hiroshi Kawarada, Takahiro Tsutsumi, Hiroki Hirayama, and Akira Yamaguchi

Appl. Phys. Lett. 64, 451 (1994); http://dx.doi.org/10.1063/1.111126 (3 pages) | Cited 26 times

Full Text: | Download PDF

Show Abstract
Dominant free‐exciton recombination radiation has been obtained from chemical vapor deposited diamonds. The crystals are formed in a microwave plasma using the mixtures CO and CO2 diluted with hydrogen. The concentration of CO2 and the position of the samples in the plasma affect the crystallinity of the samples. The peak emission intensity ratio between the free‐exciton recombination radiation and the band A emission is more than 20 in the samples formed at the edge of discharging area and with the optimum concentration of CO2. The value is the highest ever reported in diamond.
Show PACS
78.60.Hk Cathodoluminescence, ionoluminescence
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
71.35.-y Excitons and related phenomena

Subpicosecond switching in a current injected GaAs/AlGaAs multiple‐quantum‐well nonlinear directional coupler

S. G. Lee, B. P. McGinnis, R. Jin, J. Yumoto, G. Khitrova, H. M. Gibbs, R. Binder, S. W. Koch, and N. Peyghambarian

Appl. Phys. Lett. 64, 454 (1994); http://dx.doi.org/10.1063/1.111127 (3 pages) | Cited 9 times

Full Text: | Download PDF

Show Abstract
We have demonstrated ultrafast switching behavior in a current injected GaAs/AlGaAs multiple‐quantum‐well nonlinear directional coupler at room temperature. The results show low crossover pulse energy (10 pJ) and full recovery within 1 ps.
Show PACS
42.79.Gn Optical waveguides and couplers
42.65.Pc Optical bistability, multistability, and switching, including local field effects
78.66.Fd III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics

Enhanced absorption modulation in hetero n‐i‐p‐i structures by constructive superposition of field effect and phase space filling

K. H. Gulden, M. Kneissl, P. Kiesel, S. Malzer, G. H. Döhler, X. Wu, and J. S. Smith

Appl. Phys. Lett. 64, 457 (1994); http://dx.doi.org/10.1063/1.111128 (3 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
We report on large changes of the absorption coefficient due to a constructive superposition of the band‐filling effect and Franz–Keldysh absorption in a selectively contacted In0.07Ga0.93As/GaAs hetero n‐i‐p‐i structure. By changing the applied bias Upn from −2.5 to +0.8 V the internal fields in the GaAs layers can be tuned from 6.3×105 V/cm to 1.3×105 V/cm. Simultaneously the carrier concentration in the In0.07Ga0.93As quantum wells changes from 0 to 7.4×1012 cm−2. The maximum changes of the absorption coefficient observed at photon energies of 1.39 eV exceed 2000 cm−1 referred to the total sample thickness. This large absorption change is consistent with the theoretically expected constructive superposition of the sub‐band‐gap Franz–Keldysh absorption in the GaAs layers and the (red shifted) band‐filling effect in the InGaAs quantum wells.
Show PACS
78.66.Fd III-V semiconductors
78.30.Fs III-V and II-VI semiconductors
78.20.Jq Electro-optical effects
42.79.Hp Optical processors, correlators, and modulators

Photoconductance measurements on InTlSb/InSb/GaAs grown by low‐pressure metalorganic chemical vapor deposition

P. T. Staveteig, Y. H. Choi, G. Labeyrie, E. Bigan, and M. Razeghi

Appl. Phys. Lett. 64, 460 (1994); http://dx.doi.org/10.1063/1.111129 (3 pages) | Cited 17 times

Full Text: | Download PDF

Show Abstract
We report infrared photoconductors based on InTlSb/InSb grown by low‐pressure metalorganic chemical vapor deposition on semi‐insulating GaAs substrates. The photoresponse spectrum extends up to 8 μm at 77 K. The absolute magnitude of the photoresponse is measured as a function of bias. The specific detectivity is estimated to be 3×108 Hz1/2 cm W−1 at 7 μm wavelength.
Show PACS
73.50.Pz Photoconduction and photovoltaic effects
78.66.Fd III-V semiconductors
73.61.Ey III-V semiconductors
85.60.Gz Photodetectors (including infrared and CCD detectors)

Unusual photoluminescence properties in amorphous silicon nanopowder produced by plasma enhanced chemical vapor deposition

J. Costa, P. Roura, G. Sardin, J. R. Morante, and E. Bertran

Appl. Phys. Lett. 64, 463 (1994); http://dx.doi.org/10.1063/1.111130 (3 pages) | Cited 18 times

Full Text: | Download PDF

Show Abstract
The supralinear dependence of visible photoluminescence intensity from amorphous silicon nanopowder produced in plasma enhanced chemical vapor deposition on excitation power and its exponential dependence on pressure is reported. It is shown that this new material emits two different kinds of photoluminescence that dominate at different pressures.  
Show PACS
78.55.Hx Other solid inorganic materials
78.40.Ha Other nonmetallic inorganics
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Photoconductive properties of the Er‐doped InP

X. Z. Wang, A. J. Neuhalfen, and B. W. Wessels

Appl. Phys. Lett. 64, 466 (1994); http://dx.doi.org/10.1063/1.111131 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
The photoconductive properties of Er‐doped InP layers prepared by atmospheric pressure metalorganic vapor phase epitaxy were investigated. Two Er3+‐related photoconductive transitions were observed at 0.807 and 1.27 eV. The 0.807 eV transition involves a 4f‐shell intracenter transition. The 1.27 eV transition is attributed to a free to bound transition involving the Er3+‐related trapping center. Presumably this trapping level is important in the energy transfer process determining the Er3+‐related emission efficiency in InP. A model is developed to explain the photoconductive response of the Er‐doped materials.
Show PACS
73.50.Pz Photoconduction and photovoltaic effects
71.55.Eq III-V semiconductors
73.61.Ey III-V semiconductors
78.55.Cr III-V semiconductors
Page 1 of 2 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close