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31 Jan 1994

Volume 64, Issue 5, pp. 533-667

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Vacuum deposition of nonlinear chromophore‐polymer composite thin films

G.‐R. Yang, X. F. Ma, W. X. Chen, L. You, P. Wu, J. F. McDonald, and T.‐M. Lu

Appl. Phys. Lett. 64, 533 (1994); http://dx.doi.org/10.1063/1.111966 (3 pages) | Cited 6 times

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Novel nonlinear composite thin films containing 4‐dialkylamino‐4′‐nitro‐stilbene (DANS) and Teflon AF 1600 have been deposited by vacuum evaporation techniques. Pure DANS thin film, due to its centrosymmetric crystal structure, does not exhibit any electro‐optic effect. However, composite thin films of DANS and Teflon AF 1600 with a DANS concentration of 5%–25% (by volume) do exhibit an electro‐optic effect after poling. Their electro‐optical coefficients are measured to be as large as 2.4 pm/V. X‐ray diffraction shows that these composite thin films are in an amorphous state as‐deposited as well as after poling. It is argued that the DANS molecules are in their molecular form embedded in the Teflon AF amorphous matrix, thereby allowing the effect of their large molecular hyperpolarizability to be detected. The characterization of the thin films using scanning electron microscopy is also presented.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
78.20.Jq Electro-optical effects

Laser spectral linewidth dependence on waveguide loss measurements using the Fabry–Perot method

L. S. Yu, Q. Z. Liu, S. A. Pappert, P. K. L. Yu, and S. S. Lau

Appl. Phys. Lett. 64, 536 (1994); http://dx.doi.org/10.1063/1.111095 (3 pages) | Cited 13 times

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The critical role of the optical source spectral linewidth in semiconductor low loss waveguide measurements using the Fabry–Perot resonance method is analyzed. For 5‐mm‐long GaAs/AlGaAs waveguides with losses in the 1 dB/cm range, a frequency stabilized single mode laser with a linewidth of less than 0.01 Å is required to obtain a loss value accurate to within 5%.
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42.79.Gn Optical waveguides and couplers
42.82.Et Waveguides, couplers, and arrays
42.87.-d Optical testing techniques

Tapered active stripe for 1.5‐μm InGaAsP/InP strained multiple quantum well lasers with reduced beam divergence

P. Doussiere, P. Garabedian, C. Graver, E. Derouin, E. Gaumont‐Goarin, G. Michaud, and R. Meilleur

Appl. Phys. Lett. 64, 539 (1994); http://dx.doi.org/10.1063/1.111096 (3 pages) | Cited 47 times

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We propose and demonstrate the application of an intracavity horizontally tapered (in width) active stripe to adiabatically reduce the output beam divergence of a 1.48‐μm InGaAsP/InP strained quantum well laser. We achieve far‐field full width at half‐maximum divergences as low as 13° together with 100 mW emitted power into stable single transverse mode and 400 mA driving current. Maximum coupling efficiency to lensed single mode fiber of 73% is obtained.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Spatial hole burning and self‐focusing in vertical‐cavity surface‐emitting laser diodes

G. C. Wilson, D. M. Kuchta, J. D. Walker, and J. S. Smith

Appl. Phys. Lett. 64, 542 (1994); http://dx.doi.org/10.1063/1.111097 (3 pages) | Cited 43 times

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See Also: Erratum

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We measure spatial hole burning in weakly index guided vertical‐cavity surface‐emitting laser diodes (VCSELs) by spatially and spectrally resolving the spontaneous emission near field above threshold and show that spatial holes produce a significant lensing effect. We demonstrate experimentally, and with a simple model, that in weakly index guided VCSELs, self‐focusing causes the fundamental mode width to decrease with increasing output power, exacerbating the spatial hole burning problem and inducing a transition to multimode operation at relatively low powers.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Monolayer thickness fluctuations in infrared photoluminescence for [211]‐oriented HgTe‐CdTe superlattices

J. R. Meyer, A. R. Reisinger, K. A. Harris, R. W. Yanka, and L. M. Mohnkern

Appl. Phys. Lett. 64, 545 (1994); http://dx.doi.org/10.1063/1.111098 (3 pages) | Cited 5 times

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We report the observation of multiple photoluminescence peaks due to monolayer thickness fluctuations in HgTe‐CdTe superlattices. The spectra for seven different [211]‐oriented superlattices with band gaps varying from 133 to 495 meV exhibit double peaks, and in nearly all cases the energy splitting corresponds to a difference of ≊1.5 ML in the quantum well thickness.
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78.55.Et II-VI semiconductors
78.66.Hf II-VI semiconductors
68.55.-a Thin film structure and morphology

Analysis of origin of nonlinear gain in 1.5 μm semiconductor active layers by highly nondegenerate four‐wave mixing

K. Kikuchi, M. Amano, C. E. Zah, and T. P. Lee

Appl. Phys. Lett. 64, 548 (1994); http://dx.doi.org/10.1063/1.111099 (3 pages) | Cited 27 times

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The origin of the nonlinear gain effect in 1.5 μm semiconductor active layers is investigated by using highly nondegenerate four‐wave mixing, where the pump‐probe detuning is extended up to 2 THz. From the signal intensity measured as a function of the detuning frequency we find that both the spectral hole burning and the dynamic carrier heating contribute to the four‐wave mixing. The dynamic carrier heating, however, creates the index grating rather than the gain grating, and hence, the spectral hole burning is the main origin of the nonlinear gain effect.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

1.9 picosecond high‐sensitivity sampling optical temporal analyzer

Yi Chen, Steve Williamson, and Tim Brock

Appl. Phys. Lett. 64, 551 (1994); http://dx.doi.org/10.1063/1.111100 (3 pages) | Cited 3 times

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An all solid‐state, high‐sensitivity sampling optical temporal analyzer has been demonstrated by integrating two interdigitated picosecond metal‐semiconductor‐metal photodetectors into a coplanar transmission line structure. The full width at half‐maximum of the response time is 1.9 ps. The noise equivalent optical power is 500 pW, and the dynamic range is more than 60 dB.
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42.79.Pw Imaging detectors and sensors
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
85.60.Gz Photodetectors (including infrared and CCD detectors)

Modeling of laser thermoelastic generation of ultrasound in an orthotropic medium

Marc Dubois, Franck Enguehard, Lionel Bertrand, Marc Choquet, and Jean‐Pierre Monchalin

Appl. Phys. Lett. 64, 554 (1994); http://dx.doi.org/10.1063/1.111101 (3 pages) | Cited 27 times

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We present a numerical model that calculates the surface displacements generated by the absorption of a laser pulse by an orthotropic medium. This model solves the heat and acoustic wave equations using temporal Laplace and spatial two‐dimensional Fourier transformations. This model allows us to calculate the normal and in‐plane displacements on the front or back surface of an orthotropic plate over a complete area and for virtually any time and beam profiles of the laser excitation. Numerical simulations are compared to experimental results obtained on an aluminum sample and on a graphite‐epoxy plate. The experimental and numerical results are in good agreement.
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43.35.Ud Thermoacoustics, high temperature acoustics, photoacoustic effect
43.35.Zc Use of ultrasonics in nondestructive testing, industrial processes, and industrial products
43.38.Zp Acoustooptic and photoacoustic transducers

Growth of oriented diamond on single crystal of silicon carbide (0001)

T. Suzuki, M. Yagi, and K. Shibuki

Appl. Phys. Lett. 64, 557 (1994); http://dx.doi.org/10.1063/1.111102 (3 pages) | Cited 22 times

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Diamond was deposited on a (0001) plane of an α‐silicon carbide single crystal by the microwave method. The substrate surface was cleaned by pretreatment with hydrogen gas at 1200 °C. Cubo‐octahedral diamond crystals with (111)D∥(0001)SiC were obtained.
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68.55.-a Thin film structure and morphology

Morphology of plasma polymerized methyl methacrylate films

Guifang Li, Jeffrey A. Tobin, and Denice D. Denton

Appl. Phys. Lett. 64, 560 (1994); http://dx.doi.org/10.1063/1.111103 (3 pages) | Cited 6 times

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The surface morphology of plasma polymerized methyl methacrylate films was investigated using atomic force microscopy. It was found that the plasma polymer surfaces consist of nanometer scale growth columns. The average grain size of the growth columns increases with deposition time. For the same deposition time, the average grain size is proportional to pressure and deposition power. It was deduced that microscopic properties of plasma polymers are not uniform through the bulk of the plasma polymer films even though the external deposition parameters are held constant.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
82.35.-x Polymers: properties; reactions; polymerization
68.55.-a Thin film structure and morphology

Laser‐induced sub‐half‐micrometer periodic structure on polymer surfaces

Hiroyuki Hiraoka and Mariana Sendova

Appl. Phys. Lett. 64, 563 (1994); http://dx.doi.org/10.1063/1.111104 (3 pages) | Cited 34 times

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Periodic structures of sub‐half‐micrometer size are produced on the surface of different polymers [poly(ethylene terephthalate)], polyimide‐type Kapton (DuPont), and polyimide‐type XU 293 (Ciba‐Geigy)] by Nd:YAG laser irradiation at 266 nm wavelength. The obtained relief is observed by scanning electron microscopy characterized by x‐ray photoelectron spectroscopy, and an atomic force microscopy. A phenomenological explanation for the ripple formation in terms of generating waveguide modes on the polymer surface is proposed.
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81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.65.-b Surface treatments
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices

Growth of (100) oriented CdTe on Si using Ge as a buffer layer

Ishwara Bhat and Wen‐Sheng Wang

Appl. Phys. Lett. 64, 566 (1994); http://dx.doi.org/10.1063/1.111105 (3 pages) | Cited 22 times

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Epitaxial (100) CdTe layers have been grown on (100) oriented Si substrates by atmospheric pressure organometallic vapor phase epitaxy using thin Ge as a buffer layer. A very thin native oxide layer may be present on Si substrates after etching in a HF solution and this can be removed by passing GeH4 gas over Si at 450 °C. The removal of this oxide takes several minutes depending on the oxide layer thickness and reactor conditions. For the CdTe layers grown on Ge/Si substrates, single‐crystal (100) CdTe can be obtained at growth temperatures higher than 420 °C. For growth temperatures below 420 °C, a mixture of both (100) and (111) oriented CdTe was present. The x‐ray full width at half‐maximum of the (400) peak was 780 arcsec for a 3.1‐μm‐thick CdTe layer grown at 450 °C with a Ge buffer. Although all the layers had antiphase domains, single‐domain CdTe can be grown on (100)Si misoriented towards [110]. This result presents an alternative for nucleating CdTe on Si without a GaAs buffer layer.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase

Epitaxial growth of cadmium sulfide layers on indium phosphide from aqueous ammonia solutions

Daniel Lincot, Raúl Ortega‐Borges, and Michel Froment

Appl. Phys. Lett. 64, 569 (1994); http://dx.doi.org/10.1063/1.111106 (3 pages) | Cited 15 times

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Epitaxial growth of cadmium sulfide on indium phosphide monocrystals has been achieved by using chemical deposition from cadmium ammonia‐thiourea aqueous solutions. The epitaxial growth takes place on InP (111) substrates with the c axis of hexagonal CdS perpendicular to the surface. The epitaxy relations are determined by means of electron diffraction techniques. The deposition conditions appear to be flexible with reaction temperatures ranging from 60 to 90 °C, and growth rates about 0.1–0.5 μm h−1.
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81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Diamond(001) single‐domain 2×1 surface grown by chemical vapor deposition

Takashi Tsuno, Tadashi Tomikawa, Shin‐ichi Shikata, Takahiro Imai, and Naoji Fujimori

Appl. Phys. Lett. 64, 572 (1994); http://dx.doi.org/10.1063/1.111107 (3 pages) | Cited 46 times

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Diamond homoepitaxial films were grown on an off‐angle (001) substrate with a misorientation of 4.3° toward the [110] direction by microwave plasma‐assisted chemical vapor deposition from a methane‐hydrogen gas mixture. The single domain 2×1 surface was observed by low‐energy electron diffraction (LEED) and scanning tunneling microscopy, after growth with methane concentration of 2%. With a methane concentration of 6%, the LEED superstructure spot intensity from another domain increased, suggesting a higher rate of two‐dimensional nucleation.  
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.35.B- Structure of clean surfaces (and surface reconstruction)

Formation of probe microscope tips in silicon by focused ion beams

Michael J. Vasile, Christopher Biddick, and Harold Huggins

Appl. Phys. Lett. 64, 575 (1994); http://dx.doi.org/10.1063/1.111108 (2 pages) | Cited 11 times

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A combination of lithographic patterning, liquid phase anisotropic etching, and focused ion beam milling has been used to prototype the production of scanning probe microscope tips in single‐crystal silicon. The results show that tips with geometry equivalent to those made with iridium or tungsten wires can be made without the deleterious random effects of grain structure. The tips subtend a maximum cone angle of 20° and protrude 3.5 μm above the surface of a Si pyramid bounded by (111) planes.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
81.65.-b Surface treatments
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy

Electron stimulated polymerization of solid C60

Y. B. Zhao, D. M. Poirier, R. J. Pechman, and J. H. Weaver

Appl. Phys. Lett. 64, 577 (1994); http://dx.doi.org/10.1063/1.111113 (3 pages) | Cited 64 times

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Electron‐stimulated modifications to pure C60 films grown on GaAs(110) have been induced by ∼3 eV electrons from a scanning tunneling microscope (STM) and from 1500 eV electrons from an electron gun. In the STM‐modified area, a variety of apparent molecular sizes and shapes were observed with intramolecular contrast and a blurring of intermolecular distinction. Surfaces bombarded by 1500 eV electrons showed modifications over larger areas and these results suggested a growth mode for polymerization. Annealing of such modified surfaces restored the ordered fcc structure.
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61.46.-w Structure of nanoscale materials
61.80.Fe Electron and positron radiation effects
82.50.Kx Processes caused by X-rays or γ-rays
82.35.-x Polymers: properties; reactions; polymerization

Suppression of microstructural coarsening and creep deformation in a lead‐free solder

M. McCormack, S. Jin, and G. W. Kammlott

Appl. Phys. Lett. 64, 580 (1994); http://dx.doi.org/10.1063/1.111114 (3 pages) | Cited 6 times

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Bi‐43% Sn eutectic solder [melting point (m.p.)∼139 °C] undergoes extensive microstructural coarsening and severe creep deformation under stresses at temperatures near 100 °C. It is shown that a relatively uniform dispersion in the solder of essentially insoluble particles such as iron can be accomplished by use of a magnetic field, and that the presence of these dispersoid particles significantly reduces microstructural coarsening and resultant accelerating tertiary creep rates. The useful service ranges of this Bi‐Sn lead‐free solder can thus be raised to much higher homologous temperatures, allowing its use at or exposure to elevated temperatures (near 100 °C) which are typical for the widely used, lead‐containing, eutectic Pb‐63‐Sn solder alloy (m.p.∼183 °C), but with a greatly reduced creep rate.
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81.30.-t Phase diagrams and microstructures developed by solidification and solid-solid phase transformations
81.30.Bx Phase diagrams of metals, alloys, and oxides
81.40.Lm Deformation, plasticity, and creep
62.20.Hg Creep

Surface ordering of the molecular beam epitaxially grown GaAs(001)‐2×4‐As reconstruction

Junming Zhou, Qikun Xue, Hideo Chaya, Tomihiro Hashizume, and Toshio Sakurai

Appl. Phys. Lett. 64, 583 (1994); http://dx.doi.org/10.1063/1.111115 (3 pages) | Cited 31 times

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Our scanning tunneling microscopy (STM) and reflection high‐energy electron diffraction (RHEED) showed that the intensity of the two‐fourths fractional order feature in the RHEED pattern for the GaAs(001)‐2×4 structure reflects the degree of ordering of the vacancy rows. The STM images show a high degree of surface ordering only when the RHEED produces nearly the equal intensity sharp streaks for all the fourfold fractional order diffraction. Two possible mechanisms are suggested to explain the observed STM‐RHEED correlation.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.B- Structure of clean surfaces (and surface reconstruction)

Coulomb blockade in the inversion layer of a Si metal‐oxide‐semiconductor field‐effect transistor with a dual‐gate structure

Hideyuki Matsuoka, Tsuneo Ichiguchi, Toshiyuki Yoshimura, and Eiji Takeda

Appl. Phys. Lett. 64, 586 (1994); http://dx.doi.org/10.1063/1.111085 (3 pages) | Cited 19 times

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We have studied the transport properties of artificially squeezable inversion layers in a Si metal‐oxide‐semiconductor field‐effect‐transistor with a dual‐gate structure. Increasing the potential barrier height with constant intervals along the one‐dimensional channel gradually transforms a simple quantum wire into coupled quantum dots. The clear change in transport properties has been observed by changing the tunnel barrier height at low temperatures. The experimental results are discussed in terms of one‐dimensional subbands and the Coulomb blockade of single‐electron tunneling.
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73.40.Gk Tunneling
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
85.30.Tv Field effect devices
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices

Photoluminescence decay measurements of n‐ and p‐type doped ZnSe grown by molecular beam epitaxy

J. S. Massa, G. S. Buller, A. C. Walker, J. Simpson, K. A. Prior, and B. C. Cavenett

Appl. Phys. Lett. 64, 589 (1994); http://dx.doi.org/10.1063/1.111086 (3 pages) | Cited 18 times

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Time‐resolved photoluminescence has been used to study carrier recombination in n‐ and p‐type doped ZnSe at room temperature. A band‐edge photoluminescence decay time of ∼240 ps has been measured for heavily doped n‐type material together with a relaxation time of a few microseconds for the associated deep‐level emission. The band‐edge photoluminescence decay time for p‐type doped material was ≤11 ps and is indicative of a high level of nonradiative Shockley–Read recombination.
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78.55.Et II-VI semiconductors
78.66.Hf II-VI semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Fabrication of in‐plane‐gate transistor structures by focused laser beam‐induced Zn doping of modulation‐doped GaAs/AlGaAs quantum wells

P. Baumgartner, K. Brunner, G. Abstreiter, G. Böhm, G. Tränkle, and G. Weimann

Appl. Phys. Lett. 64, 592 (1994); http://dx.doi.org/10.1063/1.111087 (3 pages) | Cited 24 times

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Local Zn doping of n‐modulation‐doped GaAs/AlGaAs quantum well samples induced by absorption of a focused laser beam has been used to fabricate in‐plane‐gate transistor structures. Laser‐induced thermal Zn diffusion from a highly doped SiO2 emulsion into the sample surface layers allows direct writing of lateral npn structures with sub‐μm resolution. The p‐doped lines form lateral potential barriers which are efficiently isolating the gate electrodes for large applied voltages at room temperature. Transistor structures with a 3‐μm‐wide electron channel in between V‐shaped gates yield a transconductance of about 50 μS and are pinched‐off at gate voltages UG≤−2.0 V.
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85.30.Tv Field effect devices
85.40.Hp Lithography, masks and pattern transfer
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Charge transport in heavily B‐doped polycrystalline diamond films

M. Werner, O. Dorsch, H. U. Baerwind, E. Obermeier, L. Haase, W. Seifert, A. Ringhandt, C. Johnston, S. Romani, H. Bishop, and P. R. Chalker

Appl. Phys. Lett. 64, 595 (1994); http://dx.doi.org/10.1063/1.111088 (3 pages) | Cited 49 times

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Temperature‐dependent conductivity and Hall measurements have been carried out on heavily in situ B‐doped polycrystalline diamond films in a temperature range from ∼100 to 750 K. The slope of the conductivity is clearly non‐Arrhenius leading to a pronounced tail at low temperatures. Carrier transport at low temperatures is dominated by variable range hopping. The activation energy decreases with increasing doping concentration and the most heavily doped diamond films show metallic behavior above room temperature. Hole carrier concentrations up to 1.8×1021 cm−3 were measured in agreement with secondary‐ion‐mass spectroscopy investigations.  
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73.61.Cw Elemental semiconductors
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Study of reactive ion etching‐induced damage in GaAs/AlGaAs structures using a quantum well intermixing probe

B. S. Ooi, A. C. Bryce, C. D. W. Wilkinson, and J. H. Marsh

Appl. Phys. Lett. 64, 598 (1994); http://dx.doi.org/10.1063/1.111061 (3 pages) | Cited 19 times

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We report the damage distribution induced by C2F6 and SiCl4 reactive ion etching (RIE) using quantum wells and quantum well intermixing (QWI) as probes. Photoluminescence emission at 77 K was measured both before and after rapid thermal annealing at 900 °C for 30 s. Our results show that the QWI probing technique can effectively be utilized as a sensitive probe of RIE damage. A damage depth of 650 Å before annealing and blue shifts of up to 65 meV after annealing were obtained in C2F6 RIE regions. A damage depth of 100 Å and blue shifts of up to 30 meV were observed in SiCl4 RIE regions.
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81.65.-b Surface treatments
61.80.Jh Ion radiation effects
78.55.Cr III-V semiconductors

Hydrogen desorption kinetics from epitaxially grown Si(100)

C. Michael Greenlief and Michael Liehr

Appl. Phys. Lett. 64, 601 (1994); http://dx.doi.org/10.1063/1.111062 (3 pages) | Cited 13 times

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The kinetics for the desorption of H2 from silicon are examined. The hydrogen coverage is generated during silicon epitaxy using SiH4 in a rapid thermal chemical vapor deposition reactor. The hydrogen coverage could be ‘‘frozen out’’ completely on the surface by the rapid cooldown and pump down of the reactor up to temperatures of about 845 K. The activation energy for the desorption of hydrogen is 49±3 kcal mol−1 and the pre‐exponential for desorption is 8×1013±1 s−1. The presence of defect sites due to quenching the growth may influence the subsequent desorption kinetics of H2.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics

Resonant coupling of orbital angular momentum components in the barrier with analogous components in the well in InxGa1−xAs‐GaAs quantum wells

D. C. Reynolds, B. Jogai, P. W. Yu, K. R. Evans, and C. E. Stutz

Appl. Phys. Lett. 64, 604 (1994); http://dx.doi.org/10.1063/1.111063 (3 pages)

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When narrow InGaAs‐GaAs quantum wells (QWs) are resonantly excited by the GaAs free exciton in the barrier, the intensity of the heavy‐hole free exciton (HHFE) in the well oscillates with applied magnetic field. In the presence of a magnetic field, the magnetically field split angular momentum components of the GaAs barrier free exciton resonantly excite magnetically field split angular momentum components of the HHFE in the well. The angular momentum components of the HHFE in the well are expected to move in and out of resonance with the angular momentum components of the free exciton in the barrier as the magnetic field changes resulting in the observed intensity oscillations of the HHFE emission. When the QW is excited at energies slightly above the GaAs band‐gap energy the HHFE emission intensity is greatly reduced and the intensity oscillations with magnetic field disappear.
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
78.20.Ls Magneto-optical effects
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
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