APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

7 Feb 1994

Volume 64, Issue 6, pp. 673-804

Page 1 of 2 Pages Next Page | Jump to Page

Enhanced gain and output power of a sealed‐off rf‐excited CO2 waveguide laser with gold‐plated electrodes

M. B. Heeman‐Ilieva, Yu. B. Udalov, K. Hoen, and W. J. Witteman

Appl. Phys. Lett. 64, 673 (1994); http://dx.doi.org/10.1063/1.111084 (3 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
The small‐signal gain and the laser output power have been measured in a cw sealed‐off rf‐excited CO2 waveguide laser for two different electrode materials, gold‐plated copper and aluminum, at several excitation frequencies, gas pressures and mixture compositions. In the case of the gold‐plated electrodes an enhancement of the gain up to a factor of 2 and the output power up to a factor of 1.4 with time at a frequency of 190 MHz and 60 Torr of 1:1:5+5% (CO2:N2:He+Xe) mixture is observed. This is believed to be the result of the gold catalytic activities which are favored by increased electrode temperatures and helium rich gas compositions.
Show PACS
42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
52.80.Pi High-frequency and RF discharges
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Ultrafast dynamics in field‐enhanced saturable absorbers

J. R. Karin, R. J. Helkey, D. J. Derickson, R. Nagarajan, D. S. Allin, J. E. Bowers, and R. L. Thornton

Appl. Phys. Lett. 64, 676 (1994); http://dx.doi.org/10.1063/1.111058 (3 pages) | Cited 37 times

Full Text: | Download PDF

Show Abstract
Absorption recovery dynamics of GaAs/AlGaAs field‐enhanced waveguide saturable absorbers are studied by pump‐probe differential transmission measurements. We compare the response of bulk and single quantum well absorbers at different reverse bias levels and pump powers, and find an ultrafast transient in the response, followed by a slower rise before the final recovery. The absorption fully recovers after a few picoseconds, which is an important result for mode‐locked lasers.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
78.47.-p Spectroscopy of solid state dynamics
42.60.Fc Modulation, tuning, and mode locking

High repetition rate operation of a long pulse excimer laser

Yukio Sato, Mitsuo Inoue, Kenyu Haruta, Haruhiko Nagai, and Yutaka Murai

Appl. Phys. Lett. 64, 679 (1994); http://dx.doi.org/10.1063/1.111059 (2 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
The high repetition rate operation of a long pulse XeCl laser is demonstrated. The laser is found to work successfully when the reverse voltage mode operation of a spiker‐sustainer circuit is employed. This produces the steep voltage rise between the main electrodes resulting in an initiation of a homogeneous discharge and supplies excitation energy from the sustainer circuit with no time delay. These features enable the laser to operate at a repetition rate of greater than 500 Hz with a long pulse duration of 340 ns. An average power of 505 W is achieved.  
Show PACS
42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.-v Laser optical systems: design and operation

Observation of carrier heating in a 1.5 μm band multi‐quantum‐well semiconductor laser amplifier by time‐resolved measurement for amplified spontaneous emission spectrum

Masaaki Nido and Akira Suzuki

Appl. Phys. Lett. 64, 681 (1994); http://dx.doi.org/10.1063/1.111060 (3 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
The time development of electron temperature in 1.5 μm band multi‐quantum‐well (MQW) semiconductor laser amplifier is observed. The time development of an amplified spontaneous emission (ASE) spectrum triggered by a pump optical pulse with a 1.54 μm wavelength is observed with a time resolution of 2 ps. The electron temperature estimated from the ASE spectrum showed a fast rise up to 480 K, due to stimulated emission induced by the pump optical pulse, followed by a two‐step decrease with a time scale over 20 ps. The slow carrier cooling shows that the carrier is heated due to the carrier transport in the MQW.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
78.47.-p Spectroscopy of solid state dynamics

Novel 1×N and N×N integrated optical switches using self‐imaging multimode GaAs/AlGaAs waveguides

R. M. Jenkins, J. M. Heaton, D. R. Wight, J. T. Parker, J. C. H. Birbeck, G. W. Smith, and K. P. Hilton

Appl. Phys. Lett. 64, 684 (1994); http://dx.doi.org/10.1063/1.111033 (3 pages) | Cited 32 times

Full Text: | Download PDF

Show Abstract
We report the demonstration of novel multiway GaAs/AlGaAs electro‐optic waveguide switches which incorporate self‐imaging planar multimode waveguide splitters and recombiners interconnected by single‐mode guides. Each device consists of one or more input guides, a multiway splitter, an array of individually addressed electro‐optic waveguide phase shifters, a multiway recombiner, and an array of output guides. By controlling the voltage applied to the electro‐optic guides, light from any one input guide can be switched to any one output guide. We present experimental results for 1×10 and 10×10 devices. Typical values for switching uniformity, maximum crosstalk, and insertion loss were ±9%, −10 dB, and −12 dB, respectively.
Show PACS
42.82.-m Integrated optics
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks

Optical properties of two‐dimensional photonic lattices fabricated as honeycomb nanostructures in compound semiconductors

P. L. Gourley, J. R. Wendt, G. A. Vawter, T. M. Brennan, and B. E. Hammons

Appl. Phys. Lett. 64, 687 (1994); http://dx.doi.org/10.1063/1.111034 (3 pages) | Cited 50 times

Full Text: | Download PDF

Show Abstract
We have experimentally studied two‐dimensional photonic lattices, honeycomb nanostructures, fabricated by electron beam lithography with (Al,Ga)As materials. Surface normal optical properties were investigated by measuring reflectance to determine the effective index of refraction and lattice stability against degradation. Also, continuous wave and time‐resolved luminescence spectroscopy was used to assess electron‐hole recombination. Finally, light scattering was employed to study photon coupling and propagation through the lattice. These measurements show that the structures are stable, that nonradiative surface recombination is present, and that resonant coupling of light into/out of the lattice occurs at selected wavelengths satisfying a Bragg condition.
Show PACS
42.25.-p Wave optics
78.66.Fd III-V semiconductors

High reflectivity 1.55 μm (Al)GaSb/AlSb Bragg mirror grown by molecular beam epitaxy

B. Lambert, Y. Toudic, Y. Rouillard, M. Baudet, B. Guenais, B. Deveaud, I. Valiente, and J. C. Simon

Appl. Phys. Lett. 64, 690 (1994); http://dx.doi.org/10.1063/1.111035 (2 pages) | Cited 11 times

Full Text: | Download PDF

Show Abstract
We report the molecular beam epitaxy growth of (Al)GaSb/AlSb Bragg mirrors around the 1.55 μm wavelength region. Mirrors with 97% reflectivity have been achieved by using 10 pairs of (Al)GaSb (1048 Å) and AlSb (1207 Å) quarter wavelength layers. This demonstrates the capability of the antimonide system to obtain efficient Bragg mirrors grown on GaAs substrates.
Show PACS
42.79.Bh Lenses, prisms and mirrors
78.66.Fd III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Injection locking of a self‐mode locking CuBr laser

Jihong Geng, Yanqing Wu, Guiyan Zhang, Xiudong Song, and Fucheng Lin

Appl. Phys. Lett. 64, 692 (1994); http://dx.doi.org/10.1063/1.111036 (3 pages)

Full Text: | Download PDF

Show Abstract
A longitudinal discharge‐pumped large‐scale CuBr laser has been injection locked with self‐mode locking CuBr laser pulse trains for the first time. High average output power of mode‐locked pulses has been obtained in a wide range of delay tine between the master and slave laser by extracting energy from the slave laser. Injection locking of the green laser line and the yellow occurs simultaneously.
Show PACS
42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Fc Modulation, tuning, and mode locking

Cathodoluminescence of single quantum wires and vertical quantum wells grown on a submicron grating

A. Gustafsson, L. Samuelson, J.‐O. Malm, G. Vermeire, and P. Demeester

Appl. Phys. Lett. 64, 695 (1994); http://dx.doi.org/10.1063/1.111037 (3 pages) | Cited 7 times

Full Text: | Download PDF

Show Abstract
We present cathodoluminescence (CL) investigations of a corrugated GaAs/AlGaAs single quantum well (QW) structure grown on a submicron grating. The CL spectra have four distinct emission peaks. Using plan‐view and cross‐sectional CL imaging together with cross‐sectional transmission electron microscope imaging, we have assigned the four peaks: They originate in the nominal QW, a quantum wire (QWR), a vertical quantum well (VQW), and the barrier, respectively. We have CL‐imaged and ‐characterized single QWRs and VQWs.
Show PACS
78.66.Fd III-V semiconductors
78.60.Hk Cathodoluminescence, ionoluminescence
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Experimental and theoretical study of the facet phase influence on the wavelength shift in InGaAs/InAlGaAs quantum well distributed feedback lasers

H. Hillmer, S. Hansmann, H. Walter, and H. Burkhard

Appl. Phys. Lett. 64, 698 (1994); http://dx.doi.org/10.1063/1.111038 (3 pages)

Full Text: | Download PDF

Show Abstract
Physical laser parameters such as differential gain and differential refractive index are determined for InGaAs/InAlGaAs quantum well structures by comparing experimental results of different lasers with theoretical data from transfer matrix model calculations. By using the determined parameter set, the wavelength shift with current λ(I) is found to depend strongly in shape and magnitude on the end facet phases. Within one order of magnitude we found weak and strong variations related to the variation of the axial nonuniformity of the carrier and photon densities with current.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

On the propagation of pure plane waves in anisotropic media

John J. Ditri

Appl. Phys. Lett. 64, 701 (1994); http://dx.doi.org/10.1063/1.111039 (3 pages) | Cited 2 times

Full Text: | Download PDF

Show Abstract
In this letter it is shown that, for plane longitudinal waves propagating in generally anisotropic media, any direction in which the polarization vector is collinear with the propagation direction is also a direction in which the energy flux vector is collinear with the propagation direction. For transverse waves, the condition that the polarization vector is perpendicular to the propagation direction is shown to imply that the energy flux vector is collinear with the propagation direction only if the anisotropic media satisfies certain implicit symmetry conditions. Possible applications of these results to the determination of the elastic moduli of anisotropic media are discussed.
Show PACS
62.30.+d Mechanical and elastic waves; vibrations
62.20.D- Elasticity
62.65.+k Acoustical properties of solids
43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants

Reliability and microstructure of Al‐Si‐V‐Pd alloy films for use in ultralarge scale integration

A. G. Dirks and R. A. Augur

Appl. Phys. Lett. 64, 704 (1994); http://dx.doi.org/10.1063/1.111040 (3 pages) | Cited 9 times

Full Text: | Download PDF

Show Abstract
New data on a highly reliable interconnect material based on aluminum will be presented. As compared with conventional Al‐Si‐Cu alloy films, quaternary Al‐Si‐V‐Pd films with only 0.1 at. % vanadium and 0.1 at. % palladium combine excellent plasma etchability with good corrosion resistance. Electromigration tests of Al‐Si‐V‐Pd films have shown a surprisingly high stability at 180 °C. Studies of microstructural attributes show: (a) for Al‐Si‐V‐Pd relative to Al‐Si, texture is not significantly changed and average grain size is slightly increased, and (b) the dominant factor leading to a highly stable microstructure is the combined presence of finely dispersed, small precipitates of both (Al,V) and (Al,Pd) phases.
Show PACS
68.60.Dv Thermal stability; thermal effects
66.30.Qa Electromigration
85.40.Ls Metallization, contacts, interconnects; device isolation

Self‐organizing growth of erbium arsenide quantum dots and wires in gallium arsenide by molecular beam epitaxy

K. E. Singer, P. Rutter, A. R. Peaker, and A. C. Wright

Appl. Phys. Lett. 64, 707 (1994); http://dx.doi.org/10.1063/1.111041 (3 pages) | Cited 18 times

Full Text: | Download PDF

Show Abstract
Gallium arsenide doped with erbium has been grown by molecular beam epitaxy. At growth temperatures in the range 540–605 °C, and with arsenic to gallium flux ratios of 2 and more, the erbium forms uniform crystalline microprecipitates of ErAs when the concentration exceeds 7×1017 cm−3. The diameter can be varied in the range 11–21 Å by altering the growth temperature. Reducing the arsenic to gallium flux ratio to close to stoichiometry changes the growth mode to one yielding quantum wires aligned in the growth direction. Subtle changes in growth conditions lead to bifurcated structures, which we refer to as quantum trees.
Show PACS
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
81.30.Mh Solid-phase precipitation

Bundles of carbon nanotubes generated by vapor‐phase growth

Maohui Ge and Klaus Sattler

Appl. Phys. Lett. 64, 710 (1994); http://dx.doi.org/10.1063/1.111042 (2 pages) | Cited 34 times

Full Text: | Download PDF

Show Abstract
Bundles of nanotubes were produced by vapor‐phase condensation of carbon on highly oriented pyrolytic graphite and analyzed by scanning tunneling microscopy. The bundles are found to have widths between 15 and 50 nm, and up to 200 nm long. They are composed of concentric tubules with 2–4 nm in diameter. Atomic resolution images reveal their graphitic surface structure.
Show PACS
61.46.-w Structure of nanoscale materials
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Electric field‐dependent nonphotorefractive gratings in a nonlinear photoconducting polymer

S. M. Silence, M. C. J. M. Donckers, C. A. Walsh, D. M. Burland, W. E. Moerner, and R. J. Twieg

Appl. Phys. Lett. 64, 712 (1994); http://dx.doi.org/10.1063/1.111043 (3 pages) | Cited 7 times

Full Text: | Download PDF

Show Abstract
The molecularly doped polymer system polyvinylcarbazole:Lophine 1:2,4,7‐trinitro‐9‐fluorenone, which is both photoconductive and optically nonlinear, forms a grating whose diffraction efficiency is strongly dependent on the externally applied electric field. Two‐beam coupling measurements show no energy transfer between the beams and grating translation measurements and reveal an index of refraction grating that is not phase shifted relative to the light intensity pattern at any value of the externally applied field. These results lead to the conclusion that, even though diffraction is field dependent, the grating is not photorefractive in origin. This illustrates the importance of two‐beam coupling measurements for characterization of potentially photorefractive polymers. A possible origin of the nonphotorefractive grating based on quadratic electroabsorption is discussed.
Show PACS
78.20.Jq Electro-optical effects
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.70.Jk Polymers and organics
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Picosecond coherent Raman study of solid-state chemical reactions during laser polymer ablation

David E. Hare and Dana D. Dlott

Appl. Phys. Lett. 64, 715 (1994); http://dx.doi.org/10.1063/1.111044 (3 pages) | Cited 22 times

Full Text: | Download PDF

Show Abstract
Multiplex picosecond time-resolved coherent anti-Stokes Raman spectroscopy (CARS) is used to study the dynamics of a thin film of a polymer, poly-methyl methacrylate (PMMA), undergoing photothermal laser ablation. Time-dependent CARS spectra of a PMMA Raman transition near 810 cm−1 reveal line broadening, attributed to temperature increase, peak shift, attributed to rapid volume expansion, and the appearance of a new peak attributed to the formation of methyl methacrylate by picosecond time scale polymer thermal decomposition. This is believed to be the first direct observation of a chemical reaction product in the solid itself, during laser ablation.  
Show PACS
82.50.Bc Processes caused by infrared radiation
82.50.Hp Processes caused by visible and UV light
79.20.Ds Laser-beam impact phenomena
78.47.-p Spectroscopy of solid state dynamics

Fast linear electro‐optical switching properties of polymer‐dispersed ferroelectric liquid crystals

Kyehun Lee, Seong‐Woo Suh, and Sin‐Doo Lee

Appl. Phys. Lett. 64, 718 (1994); http://dx.doi.org/10.1063/1.111045 (3 pages) | Cited 15 times

Full Text: | Download PDF

Show Abstract
A fast linear electro‐optic effect is demonstrated in ferroelectric liquid crystal/polymer composites suitable for display applications. Both the ferroelectric liquid crystal (FLC) and the polymer matrix are oriented by the rubbing process which remarkably improves the electro‐optic characteristics of the composites. Depending on the phase transition sequence and the pitch of the FLC, the size as well as the shape of the droplets vary in the polymer matrix. The associated relaxation dynamics can be understood within a simplified model which contains the essential features of the experimental data. The switching times are on the order of a hundred μs.
Show PACS
61.30.-v Liquid crystals
42.70.Df Liquid crystals

Dynamic precipitation processes of Al2Cu in Al‐Cu thin films by in situ transmission electron microscopy

M. Park, S. J. Krause, and S. R. Wilson

Appl. Phys. Lett. 64, 721 (1994); http://dx.doi.org/10.1063/1.111046 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
Dynamic precipitation processes of the Al2Cu (θ) phase in Al‐1.5 wt % Cu thin films were studied by in situ heat treatments with transmission electron microscopy for films deposited at high temperatures in both the single‐phase and the two‐phase regions. The film deposited at 325 °C, in the two‐phase Al(α)‐Al2Cu region, has large irregular precipitates. Upon heating to 380 °C, the precipitates split and grow, and then, at 450 °C, they dissolve. Upon cooling, θ precipitates form at new locations, namely, at grain boundaries (GBs) and at triple points (TPs). Reheating and cooling does not significantly change their location and morphology. The film deposited at 465 °C, in the single‐phase Al(α) region, has fine precipitates at the GBs and TPs. Heating causes growth and then dissolution of precipitates, but upon cooling, precipitates reform at the original locations. The coarse θ precipitates, in the as‐deposited film at 325 °C, can increase corrosion susceptibility compared to the finer platelike morphology present after annealing or from deposition in the single‐phase region.
Show PACS
68.55.-a Thin film structure and morphology
68.60.Dv Thermal stability; thermal effects
81.30.Mh Solid-phase precipitation

N‐channel metal‐oxide‐semiconductor transistors fabricated in a silicon film bonded onto sapphire

J. H. Wang, M. S. Jin, V. H. Ozguz, and S. H. Lee

Appl. Phys. Lett. 64, 724 (1994); http://dx.doi.org/10.1063/1.111047 (3 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
N‐channel metal‐oxide‐semiconductor transistors were fabricated in silicon films that were bonded onto sapphire substrates. The bonded silicon films can withstand high processing temperatures (850 °C). The electrical performance of the resulting devices is comparable to that of devices fabricated in bulk silicon wafers. This technology can be applied to silicon‐on‐insulator device development and for integrated optoelectronic device research.
Show PACS
85.30.Tv Field effect devices
85.40.Hp Lithography, masks and pattern transfer

Ultralow dark current p‐type strained‐layer InGaAs/InAlAs quantum well infrared photodetector with background limited performance for T≤100 K

Y. H. Wang, Sheng S. Li, J. Chu, and Pin Ho

Appl. Phys. Lett. 64, 727 (1994); http://dx.doi.org/10.1063/1.111964 (3 pages) | Cited 18 times

Full Text: | Download PDF

Show Abstract
An ultralow dark current normal incidence p‐type strained‐layer In0.3Ga0.7Al/In0.52Al0.48As quantum well infrared photodetector (PSL‐QWIP) grown on (100) semi‐insulating InP substrate by molecular beam epitaxy technique for 8–12 μm infrared detection was demonstrated for the first time. This PSL‐QWIP shows background limited performance (BLIP) for T≤100 K, which is the highest BLIP temperature ever reported for a QWIP. Due to a 1.5% lattice mismatch between the substrate and quantum well, a biaxial tensile strain was created in the In0.3Ga0.7As well layers. As a result, the light‐hole state becomes the ground state for the free hole with small effective mass. The dramatic increase of optical absorption can be attributed to the large in‐plane density of states and the small light‐hole effective mass as a result of heavy‐ and light‐hole state inversion. The dark current density and BLIP detectivity for this PSL‐QWIP were found to be 7×10−8 A/cm2 and 5.9×1010 cm−√Hz/W, respectively, at λp=8.1 μm, Vb=2 V, and T=77 K.
Show PACS
85.60.Gz Photodetectors (including infrared and CCD detectors)
78.66.Fd III-V semiconductors
73.50.Pz Photoconduction and photovoltaic effects

Ambipolar diffusion anisotropy induced by defects in nipi‐doped In0.2Ga0.8As/GaAs multiple quantum wells

D. H. Rich, K. Rammohan, Y. Tang, H. T. Lin, J. Maserjian, F. J. Grunthaner, A. Larsson, and S. I. Borenstain

Appl. Phys. Lett. 64, 730 (1994); http://dx.doi.org/10.1063/1.111048 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
The influence of strain‐induced defects on the ambipolar diffusive transport of excess electrons and holes in the δ‐doped InGaAs/GaAs multiple quantum well system has been examined with a new technique called electron‐beam‐induced absorption modulation (EBIA). The excess carrier lifetime and diffusion coefficient are obtained by a one‐dimensional diffusion experiment that utilizes EBIA. An anisotropy in the ambipolar diffusion along both high‐symmetry 〈110〉 directions is found, and this is seen to correlate with the distribution of dark line defects observed in cathodoluminescence.
Show PACS
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
71.55.Eq III-V semiconductors

Necessity of Ga prelayers in GaAs/Ge growth using gas‐source molecular beam epitaxy

E. A. Fitzgerald, J. M. Kuo, Y. H. Xie, and P. J. Silverman

Appl. Phys. Lett. 64, 733 (1994); http://dx.doi.org/10.1063/1.111049 (3 pages) | Cited 17 times

Full Text: | Download PDF

Show Abstract
We have investigated the gas‐source molecular beam epitaxy growth of GaAs on a (001) Ge surface, off‐cut 6° towards the [110]. Initiation of GaAs on Ge with the typical procedure of using a self‐terminating As layer invariably produces poor GaAs surface morphology and generates a plethora of antiphase boundaries, despite the large miscut of the (001) surface. However, initiation of GaAs growth with approximately 1 ML (monolayer) of Ga results in single‐domain films with excellent surface morphology. We conclude that the Ga monolayer prevents the Ge surface from forming a high step density surface which is established when Ge is exposed to As2.
Show PACS
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology

Short wavelength intersubband transitions in InGaAs/AlGaAs quantum wells grown on GaAs

H. C. Chui, E. L. Martinet, M. M. Fejer, and J. S. Harris

Appl. Phys. Lett. 64, 736 (1994); http://dx.doi.org/10.1063/1.111050 (3 pages) | Cited 24 times

Full Text: | Download PDF

Show Abstract
We have demonstrated intersubband transition energies as high as 580 meV (2.1 μm wavelength) in InGaAs/AlGaAs quantum wells (QWs) grown on GaAs substrates. The well width dependence of intersubband transition energies in both In0.5Ga0.5As/Al0.45Ga0.55As QWs and In0.5Ga0.5As/AlAs QWs have been determined. Good agreement of the intersubband transition energies to a single band effective mass model with band nonparabolicity included is found. Experimental studies of buffer and QW growth parameters for optimized intersubband absorption have also been performed.
Show PACS
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.Fd III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Strain symmetrization effects in pseudomorphic Si1−yCy/Si1−xGex superlattices

K. Eberl, S. S. Iyer, and F. K. LeGoues

Appl. Phys. Lett. 64, 739 (1994); http://dx.doi.org/10.1063/1.111051 (3 pages) | Cited 17 times

Full Text: | Download PDF

Show Abstract
We report on strain and stability measurements on pseudomorphic Si1−yCy/Si1−xGex superlattices which are synthesized by solid source molecular beam epitaxy on silicon (100) substrate. The strain in the superlattices alternates between tensile and compressive in the individual Si1−yCy and Si1−xGex alloy layers, respectively. A symmetrical strain distribution can be achieved directly on silicon by adjusting the carbon and the germanium content and/or the thickness of the individual layers. X‐ray diffraction and transmission electron microscopy are applied to investigate the structural properties and the thermal stability.
Show PACS
68.55.-a Thin film structure and morphology
68.60.Dv Thermal stability; thermal effects
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Low power all‐optical bistability in InGaAs‐AlInAs superlattices: Demonstration of a wireless self‐electro‐optical effect device operating at 1.5 μm

J. Couturier, P. Voisin, and J. C. Harmand

Appl. Phys. Lett. 64, 742 (1994); http://dx.doi.org/10.1063/1.111052 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
We report the observation of optical transmission bistability at low temperature in unprocessed InGaAs‐AlInAs superlattice p‐i‐n structures. Bistability results, in analogy with the self‐electro‐optical effect device, from a positive feedback mechanism due to the interplay between Wannier–Stark effect, built‐in field, and screening by photocarriers.
Show PACS
78.66.Fd III-V semiconductors
42.65.Pc Optical bistability, multistability, and switching, including local field effects
78.20.Jq Electro-optical effects
Page 1 of 2 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close